CA1005175A - Method for the production of integrated circuits with complementary channel field effect transistors - Google Patents

Method for the production of integrated circuits with complementary channel field effect transistors

Info

Publication number
CA1005175A
CA1005175A CA196,349A CA196349A CA1005175A CA 1005175 A CA1005175 A CA 1005175A CA 196349 A CA196349 A CA 196349A CA 1005175 A CA1005175 A CA 1005175A
Authority
CA
Canada
Prior art keywords
production
field effect
integrated circuits
effect transistors
channel field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA196,349A
Other versions
CA196349S (en
Inventor
Heinrich Schlotterer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1005175A publication Critical patent/CA1005175A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/06Gettering
CA196,349A 1973-03-30 1974-03-29 Method for the production of integrated circuits with complementary channel field effect transistors Expired CA1005175A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316095A DE2316095A1 (en) 1973-03-30 1973-03-30 METHOD FOR MANUFACTURING INTEGRATED CIRCUITS WITH COMPLEMENTARY CHANNEL FIELD EFFECT TRANSISTORS

Publications (1)

Publication Number Publication Date
CA1005175A true CA1005175A (en) 1977-02-08

Family

ID=5876571

Family Applications (1)

Application Number Title Priority Date Filing Date
CA196,349A Expired CA1005175A (en) 1973-03-30 1974-03-29 Method for the production of integrated circuits with complementary channel field effect transistors

Country Status (13)

Country Link
US (1) US3919765A (en)
JP (1) JPS49131085A (en)
AT (1) AT339377B (en)
BE (1) BE813051A (en)
CA (1) CA1005175A (en)
CH (1) CH570042A5 (en)
DE (1) DE2316095A1 (en)
FR (1) FR2223838B1 (en)
GB (1) GB1443480A (en)
IT (1) IT1011152B (en)
LU (1) LU69729A1 (en)
NL (1) NL7404337A (en)
SE (1) SE386542B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450408A1 (en) * 1974-10-23 1976-04-29 Siemens Ag CIRCUIT ARRANGEMENT IN A COMPLEMENTARY CHL TECHNOLOGY
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
AT380974B (en) * 1982-04-06 1986-08-11 Shell Austria METHOD FOR SETTING SEMICONDUCTOR COMPONENTS
JP3562588B2 (en) 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3193803B2 (en) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor element
KR100226730B1 (en) * 1997-04-24 1999-10-15 구본준 Manufacture of semiconductor device
US6068685A (en) * 1997-10-15 2000-05-30 Saes Pure Gas, Inc. Semiconductor manufacturing system with getter safety device
EP1028798B1 (en) 1997-10-15 2002-01-02 SAES PURE GAS, Inc. Gas purification system with safety device and method for purifying gases
US6236089B1 (en) 1998-01-07 2001-05-22 Lg Semicon Co., Ltd. CMOSFET and method for fabricating the same
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
DE2316095A1 (en) 1974-10-10
JPS49131085A (en) 1974-12-16
SE386542B (en) 1976-08-09
AT339377B (en) 1977-10-10
ATA217274A (en) 1977-02-15
GB1443480A (en) 1976-07-21
US3919765A (en) 1975-11-18
BE813051A (en) 1974-07-15
FR2223838A1 (en) 1974-10-25
IT1011152B (en) 1977-01-20
FR2223838B1 (en) 1978-11-10
NL7404337A (en) 1974-10-02
CH570042A5 (en) 1975-11-28
LU69729A1 (en) 1974-07-17

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