CA1005175A - Method for the production of integrated circuits with complementary channel field effect transistors - Google Patents
Method for the production of integrated circuits with complementary channel field effect transistorsInfo
- Publication number
- CA1005175A CA1005175A CA196,349A CA196349A CA1005175A CA 1005175 A CA1005175 A CA 1005175A CA 196349 A CA196349 A CA 196349A CA 1005175 A CA1005175 A CA 1005175A
- Authority
- CA
- Canada
- Prior art keywords
- production
- field effect
- integrated circuits
- effect transistors
- channel field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2316095A DE2316095A1 (en) | 1973-03-30 | 1973-03-30 | METHOD FOR MANUFACTURING INTEGRATED CIRCUITS WITH COMPLEMENTARY CHANNEL FIELD EFFECT TRANSISTORS |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1005175A true CA1005175A (en) | 1977-02-08 |
Family
ID=5876571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA196,349A Expired CA1005175A (en) | 1973-03-30 | 1974-03-29 | Method for the production of integrated circuits with complementary channel field effect transistors |
Country Status (13)
Country | Link |
---|---|
US (1) | US3919765A (en) |
JP (1) | JPS49131085A (en) |
AT (1) | AT339377B (en) |
BE (1) | BE813051A (en) |
CA (1) | CA1005175A (en) |
CH (1) | CH570042A5 (en) |
DE (1) | DE2316095A1 (en) |
FR (1) | FR2223838B1 (en) |
GB (1) | GB1443480A (en) |
IT (1) | IT1011152B (en) |
LU (1) | LU69729A1 (en) |
NL (1) | NL7404337A (en) |
SE (1) | SE386542B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2450408A1 (en) * | 1974-10-23 | 1976-04-29 | Siemens Ag | CIRCUIT ARRANGEMENT IN A COMPLEMENTARY CHL TECHNOLOGY |
US4043025A (en) * | 1975-05-08 | 1977-08-23 | National Semiconductor Corporation | Self-aligned CMOS process for bulk silicon and insulating substrate device |
AT380974B (en) * | 1982-04-06 | 1986-08-11 | Shell Austria | METHOD FOR SETTING SEMICONDUCTOR COMPONENTS |
JP3562588B2 (en) | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
JP3193803B2 (en) * | 1993-03-12 | 2001-07-30 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor element |
KR100226730B1 (en) * | 1997-04-24 | 1999-10-15 | 구본준 | Manufacture of semiconductor device |
US6068685A (en) * | 1997-10-15 | 2000-05-30 | Saes Pure Gas, Inc. | Semiconductor manufacturing system with getter safety device |
EP1028798B1 (en) | 1997-10-15 | 2002-01-02 | SAES PURE GAS, Inc. | Gas purification system with safety device and method for purifying gases |
US6236089B1 (en) | 1998-01-07 | 2001-05-22 | Lg Semicon Co., Ltd. | CMOSFET and method for fabricating the same |
US8481372B2 (en) * | 2008-12-11 | 2013-07-09 | Micron Technology, Inc. | JFET device structures and methods for fabricating the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673679A (en) * | 1970-12-01 | 1972-07-04 | Texas Instruments Inc | Complementary insulated gate field effect devices |
US3783052A (en) * | 1972-11-10 | 1974-01-01 | Motorola Inc | Process for manufacturing integrated circuits on an alumina substrate |
US3837071A (en) * | 1973-01-16 | 1974-09-24 | Rca Corp | Method of simultaneously making a sigfet and a mosfet |
-
1973
- 1973-03-30 DE DE2316095A patent/DE2316095A1/en active Pending
-
1974
- 1974-03-15 AT AT217274A patent/AT339377B/en active
- 1974-03-21 FR FR7409676A patent/FR2223838B1/fr not_active Expired
- 1974-03-22 CH CH402674A patent/CH570042A5/xx not_active IP Right Cessation
- 1974-03-26 IT IT49644/74A patent/IT1011152B/en active
- 1974-03-27 GB GB1364974A patent/GB1443480A/en not_active Expired
- 1974-03-28 SE SE7404192A patent/SE386542B/en unknown
- 1974-03-28 US US455590A patent/US3919765A/en not_active Expired - Lifetime
- 1974-03-28 LU LU69729A patent/LU69729A1/xx unknown
- 1974-03-29 BE BE142638A patent/BE813051A/en unknown
- 1974-03-29 CA CA196,349A patent/CA1005175A/en not_active Expired
- 1974-03-29 NL NL7404337A patent/NL7404337A/xx unknown
- 1974-03-29 JP JP49035479A patent/JPS49131085A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2316095A1 (en) | 1974-10-10 |
JPS49131085A (en) | 1974-12-16 |
SE386542B (en) | 1976-08-09 |
AT339377B (en) | 1977-10-10 |
ATA217274A (en) | 1977-02-15 |
GB1443480A (en) | 1976-07-21 |
US3919765A (en) | 1975-11-18 |
BE813051A (en) | 1974-07-15 |
FR2223838A1 (en) | 1974-10-25 |
IT1011152B (en) | 1977-01-20 |
FR2223838B1 (en) | 1978-11-10 |
NL7404337A (en) | 1974-10-02 |
CH570042A5 (en) | 1975-11-28 |
LU69729A1 (en) | 1974-07-17 |
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