CA1026468A - Bipolar transistor circuit - Google Patents

Bipolar transistor circuit

Info

Publication number
CA1026468A
CA1026468A CA224,218A CA224218A CA1026468A CA 1026468 A CA1026468 A CA 1026468A CA 224218 A CA224218 A CA 224218A CA 1026468 A CA1026468 A CA 1026468A
Authority
CA
Canada
Prior art keywords
bipolar transistor
transistor circuit
circuit
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA224,218A
Other languages
French (fr)
Other versions
CA224218S (en
Inventor
Susumu Hirai
Kunizo Suzuki
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4146474A external-priority patent/JPS555268B2/ja
Priority claimed from JP5212174A external-priority patent/JPS50145089A/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1026468A publication Critical patent/CA1026468A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00Systems containing only non-condensed rings
    • C07C2601/12Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14The ring being saturated
CA224,218A 1974-04-10 1975-04-09 Bipolar transistor circuit Expired CA1026468A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4146474A JPS555268B2 (en) 1974-04-10 1974-04-10
JP5212174A JPS50145089A (en) 1974-05-10 1974-05-10

Publications (1)

Publication Number Publication Date
CA1026468A true CA1026468A (en) 1978-02-14

Family

ID=26381084

Family Applications (1)

Application Number Title Priority Date Filing Date
CA224,218A Expired CA1026468A (en) 1974-04-10 1975-04-09 Bipolar transistor circuit

Country Status (7)

Country Link
US (1) US4000506A (en)
CA (1) CA1026468A (en)
DE (1) DE2515577C2 (en)
FR (1) FR2267641B1 (en)
GB (1) GB1502165A (en)
IT (1) IT1037228B (en)
NL (1) NL7504306A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
NL7604445A (en) * 1976-04-27 1977-10-31 Philips Nv PROCESS FOR MANUFACTURE OF A SEMI-CONDUCTED DEVICE, AND DEVICE MANUFACTURED BY APPLICATION OF THE PROCEDURE.
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
JPS5940576A (en) * 1982-08-30 1984-03-06 Junichi Nishizawa Photo thyristor
JPS5941877A (en) * 1982-08-31 1984-03-08 Junichi Nishizawa Phototransistor
GB2132016B (en) * 1982-12-07 1986-06-25 Kokusai Denshin Denwa Co Ltd A semiconductor device
EP0166923A3 (en) * 1984-06-29 1987-09-30 International Business Machines Corporation High performance bipolar transistor having a lightly doped guard ring disposed between the emitter and the extrinsic base region
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US4905070A (en) * 1988-09-02 1990-02-27 Motorola, Inc. Semiconductor device exhibiting no degradation of low current gain
EP0974165B1 (en) * 1998-02-09 2009-03-25 Nxp B.V. Semiconductor device with a bipolar transistor, and method of manufacturing such a device
DE10206133C1 (en) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertical bipolar transistor with inherent junction field effect transistor (J-FET)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (en) * 1959-02-12
NL103476C (en) * 1955-04-21
NL242787A (en) * 1958-09-05
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices

Also Published As

Publication number Publication date
GB1502165A (en) 1978-02-22
NL7504306A (en) 1975-10-14
DE2515577A1 (en) 1975-10-23
FR2267641A1 (en) 1975-11-07
US4000506A (en) 1976-12-28
FR2267641B1 (en) 1978-09-01
IT1037228B (en) 1979-11-10
DE2515577C2 (en) 1986-01-02

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