CA1178338A - Switched capacitor temperature independent bandgap reference - Google Patents
Switched capacitor temperature independent bandgap referenceInfo
- Publication number
- CA1178338A CA1178338A CA000393948A CA393948A CA1178338A CA 1178338 A CA1178338 A CA 1178338A CA 000393948 A CA000393948 A CA 000393948A CA 393948 A CA393948 A CA 393948A CA 1178338 A CA1178338 A CA 1178338A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- coupled
- circuit
- vbe
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Abstract
ABSTRACT
A temperature stable bandgap voltage reference source utilizing two substrate bipolar transistors biased at different emitter current densities is provided. Switched capacitors are used to input the Vbe and the .DELTA.Vbe of the transistors (NTC and PTC voltages, respectively) into an amplifier to provide a reference voltage VREF proportional to the weighted sum of the PTC and NTC voltages. Proper selection of the ratio of the switched capacitors renders the reference voltage VREF substantially independent of temperature. In a modified form of the reference, the reference amplifier is implemented by an auto-zeroed operational amplifier which uses switched capacitor techniques and an integrated capacitor to achieve the auto-zeroing function.
A temperature stable bandgap voltage reference source utilizing two substrate bipolar transistors biased at different emitter current densities is provided. Switched capacitors are used to input the Vbe and the .DELTA.Vbe of the transistors (NTC and PTC voltages, respectively) into an amplifier to provide a reference voltage VREF proportional to the weighted sum of the PTC and NTC voltages. Proper selection of the ratio of the switched capacitors renders the reference voltage VREF substantially independent of temperature. In a modified form of the reference, the reference amplifier is implemented by an auto-zeroed operational amplifier which uses switched capacitor techniques and an integrated capacitor to achieve the auto-zeroing function.
Description
~7833~
SWITCHED CAPACITOR BANDGAP REFERENCE:
BACRGROUND OF THE INVENTION
Field of the Invention This invention relates generally to bandgap reference circuits and more particularly to CMOS bandgap reference circuits.
Description of the Prior Art Typically, the best reference for a good reproducible, stable voltage below three volts has been the bandgap reference circuit. As discussed in Analysis and Design of Analog Integrated Circuits by Paul R4 Gray and Robert G.
Meyer (John Wiley and Sons, 1977, pp. 239-261), the base to emitter voltage Vbe, of a bipolar transistor exhibits a negative temperature coefficient with respect to temperature. Thus, the sum of the base to emitter voltage, Vbe, of a bipolar transistor and a differential voltage ~Vbe will be relatively independent of temperature when the sum voltage equals the energy gap of silicon. Such temperature stable references have been created by generating a Vbe and summing a ~Vbe of such value that the sum substantially equals the bandgap voltage of 1~205 volts.
A standard CMOS process can be used to fabricate open emitter NPN bipolar transistors for use in a bandgap refer-ence circuit such as that taught in U.SO Patent No. 4,287,43~. To create a stable temperature independent CMOS
bandgap voltage uith amplifying means, such as an operational amplifier, two transistors of varying current density were used as emitter followers having resistors in their emitter circuits from which a differential voltage was obtained. An output voltage having a positive, negative or zero coefficient was thereby produced.
`
`~
713;~38 Several factors in the CMOS circuit, however, affected the initial tolerance variation and temperature variation of the bandgap voltage. The dominant initial tolerance error was caused by the offset voltage associated with the operational amplifier being multiplied by the ratio of two resistors in the emi-tter circuit of the transistor with lowest current density. Further disadvantages of the prior art are problems with P-resistor matching and a 2:1 variation in the P-resistivity over temperature. Previous CMOS bandgap circuits also required a startup circuit.
Summary of the Invention It is an object of the present invention to provide a bandgap reference utilizing substrate bipolar transistors and MOS transistors to provide a reference voltage which is substantially temperature stable and substantially independent of process variations.
It is a further object of the invention to provide a bandgap reference fabricated using a standard CMOS process and switched capacitor techniques, which sums the Vbe and ~Vbe of substrate bipolar transistors to derive a near zero temperature coefficient reference voltage.
According to an (P.A.) aspect of the invention, there are provided a first and a second substrate bipolar transistor wherein the emitter area of the first transistor is much larger than the emitter area of the second transistor. Since the second transistor is operated at a higher current density than the first transistor, the Vbe Of the second transistor is greater than the Vbe of the first transistor. Using switched capacitors coupled to the emitters of the transistors, the base to emitter voltages of the devices are sampled. When the difference between the two sampled voltages are added in the correct proportion, the result is a voltage with a substantially zero temperature coefficient. The above and ,: ~
other objects, features and advantages of the present invention will be more clearly understood from the followiny detailed description taken in conjunction with the accompanying drawings.
Brief Description of the Drawings Figure 1 is a schematic diagram illustrating one preferred embodiment of the invention.
Figure 2 is a graphic timing diagram for the schematic embodiment shown in Figure 1.
Figure 3 is a schematic diagram illustrating another embodiment of the amplifier used in the present invention.
Figure 4 is a graphic timing diagram for the schematic embodiment shown in Figure 3.
Description of the Preferred Embodiment Shown in Figure 1, is a switched capacitor bandgap reference circuit 10 constructed in accordance with the preferred embodiment of -this invention. The bandgap reference circuit 10 is comprised generally of first and second bipolar transistors 12 and 14, respectively, a clock circuit 16, a first switched capacitance circuit 18, a second switched capacitance circuit 20, and an amplifier circuit 22.
Each of the first and second bipolar transistors 12 and 14 has the collector thereof connected to a positive supply Vdd, the base thereof connected to a common reference voltage, say analog ground Vag, and the emitter thereof connected to a negative supply Vss via respective current sources 24 and 26. In the preferred form, the current sources 24 and 26 are constructed to sink a predetermined ratio of currents, and transistor 12 is fabricated with a larger emitter area than the transistor 14. Since the transistors 12 and 14 are biased at different .
:' ' ;:
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current d~nsities they will thus develop different base-to-emitter voltages, Vbe. Because the transistors 12 and 14 are connected as emitter followers, the preferred embodiment may be fabricated using the substrate NPN in a standard CMOS process.
In the first switched capacitance circuit 18, a capacitor 28 has an input connected via switches 30 and 32 to the common reference voltage Vag and the emitter of transistor 14, respectively. In the second switched capaci-tance circuit 20, a capacitor 34 has an input connected viaswitches 36 and 38 to the emitter of transistors 12 and 14, respectively. Capacitors 28 and 34 have the outputs thereof connected to a node 40. In the preferred embodiment, switches 30, 32, 36 and 38 are CMOS transmission gates which are clocked in a conventional manner by the clock circuit 16. Switches 30 and 36 are constructed to be conductive when a clock signal A applied to the control inputs thereof is at a high state, and non-conductive when the clock signal A is at a low state. In contrast, switches 32 and 38 are preferably constructed to be conductive when a clock signal B applied to the control inputs thereof is at a high state and non-conductive when the clock signal B is at a low state~
In this configuration, switches 30 and 32 will cooperate to charge capacitor 28 alternately to the base voltage of transistor 14 and the emitter voltage of transistor 14, thus providing a charge related to Vbe o~ transistor 14. Simultaneously, switches 36 and 38 cooperated to charge capacitor 34 alternately to the emitter voltage of transistor 12 and the emitter voltage of transistor 14, thus providing a charge related to the difference between the base to emitter voltages, i.e., the ~Vbe, of the transistors 12 and 14. As will be clear to those skilled in the art, the voltage, Vbe, will exhibit a negative temperature coefficient (NTC). On the other hand, it is well known that the voltage ~Vbe :` :
exhibits a positive temperature coefficient (PTC). Thus, it will be clear that the weighted sum of these voltages, Vbe + K~Vbe, where K = C34/C28 may be made substantially temperature independent by appropriate selection of the ratio of capacitors 28 and 34.
In the amplifier circuit 22, an operational amplifier 42 has its negative input coupled to node 40 and its positive input coupled to the reference voltage Vag. A
feedback capacitor 44 is coupled between the output of operational amplifier 42 at node 46 and the negative input of the operational amplifier at node 40. In the preferred form, a switch 48 is coupled across feedback capacitor 44 with the control input thereof coupled to clock signal C
provided by clock circuit 16. By periodically closing s~itch 48, the operational amplifier 42 is placed in unity gain, and any charge on capacitor 44 is removed.
As shown in Figure 2, the clock circuit 16 initially provides the clock signal A in a high state to close switches 30 and 36, and clock signal B in a low state to open switches 32 and 38. Simultaneously, the clock circuit 16 provides the clock signal C in a high state to close the switch ~8. During this precharge period, feedback capacitor 44 is discharged, and, ignoring any amplifier offset, capacitors 28 and 34 are charged to the reference voltage, Vag, and the Vbe of the transistor 12, respectively. A
short time before the end of the precharge period, the clock circuit 16 opens switch 48 by providing the clock signal C in a low state. Shortly thereafter, but still before the end of the precharge period, the clock 16 opens switches 30 and 36 by providing the clock signal A in the low state. At the end of the precharge period and the start of a valid output reference period, the clock circuit 16 closes switches 32 and 38 by providing the clock signal B
in the high state. At this time, the voltage on the terminals of capacitor 28 changes by -Vbe of transistor 14 and the voltage on the terminals of capacitor 34 changes by the difference between the base to emitter voltages of the transistors 12 and 14, (Vbel2 ~ Vbel4) This swi c g event causes an amount of charye Q = Vbel4C28 + (Vbel2 ~
Vb~l4)C34 to be transferred to capacitor 44 resulting in an output voltage of Vref = ~l/c4~[-vbel4c2g + (Vbel2 ~ Vbel4) C34] on node 46. In the preferred form, this positive bandgap reference voltage, +Vref is made substantially temperature independent by making the ratio of capacitors
SWITCHED CAPACITOR BANDGAP REFERENCE:
BACRGROUND OF THE INVENTION
Field of the Invention This invention relates generally to bandgap reference circuits and more particularly to CMOS bandgap reference circuits.
Description of the Prior Art Typically, the best reference for a good reproducible, stable voltage below three volts has been the bandgap reference circuit. As discussed in Analysis and Design of Analog Integrated Circuits by Paul R4 Gray and Robert G.
Meyer (John Wiley and Sons, 1977, pp. 239-261), the base to emitter voltage Vbe, of a bipolar transistor exhibits a negative temperature coefficient with respect to temperature. Thus, the sum of the base to emitter voltage, Vbe, of a bipolar transistor and a differential voltage ~Vbe will be relatively independent of temperature when the sum voltage equals the energy gap of silicon. Such temperature stable references have been created by generating a Vbe and summing a ~Vbe of such value that the sum substantially equals the bandgap voltage of 1~205 volts.
A standard CMOS process can be used to fabricate open emitter NPN bipolar transistors for use in a bandgap refer-ence circuit such as that taught in U.SO Patent No. 4,287,43~. To create a stable temperature independent CMOS
bandgap voltage uith amplifying means, such as an operational amplifier, two transistors of varying current density were used as emitter followers having resistors in their emitter circuits from which a differential voltage was obtained. An output voltage having a positive, negative or zero coefficient was thereby produced.
`
`~
713;~38 Several factors in the CMOS circuit, however, affected the initial tolerance variation and temperature variation of the bandgap voltage. The dominant initial tolerance error was caused by the offset voltage associated with the operational amplifier being multiplied by the ratio of two resistors in the emi-tter circuit of the transistor with lowest current density. Further disadvantages of the prior art are problems with P-resistor matching and a 2:1 variation in the P-resistivity over temperature. Previous CMOS bandgap circuits also required a startup circuit.
Summary of the Invention It is an object of the present invention to provide a bandgap reference utilizing substrate bipolar transistors and MOS transistors to provide a reference voltage which is substantially temperature stable and substantially independent of process variations.
It is a further object of the invention to provide a bandgap reference fabricated using a standard CMOS process and switched capacitor techniques, which sums the Vbe and ~Vbe of substrate bipolar transistors to derive a near zero temperature coefficient reference voltage.
According to an (P.A.) aspect of the invention, there are provided a first and a second substrate bipolar transistor wherein the emitter area of the first transistor is much larger than the emitter area of the second transistor. Since the second transistor is operated at a higher current density than the first transistor, the Vbe Of the second transistor is greater than the Vbe of the first transistor. Using switched capacitors coupled to the emitters of the transistors, the base to emitter voltages of the devices are sampled. When the difference between the two sampled voltages are added in the correct proportion, the result is a voltage with a substantially zero temperature coefficient. The above and ,: ~
other objects, features and advantages of the present invention will be more clearly understood from the followiny detailed description taken in conjunction with the accompanying drawings.
Brief Description of the Drawings Figure 1 is a schematic diagram illustrating one preferred embodiment of the invention.
Figure 2 is a graphic timing diagram for the schematic embodiment shown in Figure 1.
Figure 3 is a schematic diagram illustrating another embodiment of the amplifier used in the present invention.
Figure 4 is a graphic timing diagram for the schematic embodiment shown in Figure 3.
Description of the Preferred Embodiment Shown in Figure 1, is a switched capacitor bandgap reference circuit 10 constructed in accordance with the preferred embodiment of -this invention. The bandgap reference circuit 10 is comprised generally of first and second bipolar transistors 12 and 14, respectively, a clock circuit 16, a first switched capacitance circuit 18, a second switched capacitance circuit 20, and an amplifier circuit 22.
Each of the first and second bipolar transistors 12 and 14 has the collector thereof connected to a positive supply Vdd, the base thereof connected to a common reference voltage, say analog ground Vag, and the emitter thereof connected to a negative supply Vss via respective current sources 24 and 26. In the preferred form, the current sources 24 and 26 are constructed to sink a predetermined ratio of currents, and transistor 12 is fabricated with a larger emitter area than the transistor 14. Since the transistors 12 and 14 are biased at different .
:' ' ;:
~3~'7833~
current d~nsities they will thus develop different base-to-emitter voltages, Vbe. Because the transistors 12 and 14 are connected as emitter followers, the preferred embodiment may be fabricated using the substrate NPN in a standard CMOS process.
In the first switched capacitance circuit 18, a capacitor 28 has an input connected via switches 30 and 32 to the common reference voltage Vag and the emitter of transistor 14, respectively. In the second switched capaci-tance circuit 20, a capacitor 34 has an input connected viaswitches 36 and 38 to the emitter of transistors 12 and 14, respectively. Capacitors 28 and 34 have the outputs thereof connected to a node 40. In the preferred embodiment, switches 30, 32, 36 and 38 are CMOS transmission gates which are clocked in a conventional manner by the clock circuit 16. Switches 30 and 36 are constructed to be conductive when a clock signal A applied to the control inputs thereof is at a high state, and non-conductive when the clock signal A is at a low state. In contrast, switches 32 and 38 are preferably constructed to be conductive when a clock signal B applied to the control inputs thereof is at a high state and non-conductive when the clock signal B is at a low state~
In this configuration, switches 30 and 32 will cooperate to charge capacitor 28 alternately to the base voltage of transistor 14 and the emitter voltage of transistor 14, thus providing a charge related to Vbe o~ transistor 14. Simultaneously, switches 36 and 38 cooperated to charge capacitor 34 alternately to the emitter voltage of transistor 12 and the emitter voltage of transistor 14, thus providing a charge related to the difference between the base to emitter voltages, i.e., the ~Vbe, of the transistors 12 and 14. As will be clear to those skilled in the art, the voltage, Vbe, will exhibit a negative temperature coefficient (NTC). On the other hand, it is well known that the voltage ~Vbe :` :
exhibits a positive temperature coefficient (PTC). Thus, it will be clear that the weighted sum of these voltages, Vbe + K~Vbe, where K = C34/C28 may be made substantially temperature independent by appropriate selection of the ratio of capacitors 28 and 34.
In the amplifier circuit 22, an operational amplifier 42 has its negative input coupled to node 40 and its positive input coupled to the reference voltage Vag. A
feedback capacitor 44 is coupled between the output of operational amplifier 42 at node 46 and the negative input of the operational amplifier at node 40. In the preferred form, a switch 48 is coupled across feedback capacitor 44 with the control input thereof coupled to clock signal C
provided by clock circuit 16. By periodically closing s~itch 48, the operational amplifier 42 is placed in unity gain, and any charge on capacitor 44 is removed.
As shown in Figure 2, the clock circuit 16 initially provides the clock signal A in a high state to close switches 30 and 36, and clock signal B in a low state to open switches 32 and 38. Simultaneously, the clock circuit 16 provides the clock signal C in a high state to close the switch ~8. During this precharge period, feedback capacitor 44 is discharged, and, ignoring any amplifier offset, capacitors 28 and 34 are charged to the reference voltage, Vag, and the Vbe of the transistor 12, respectively. A
short time before the end of the precharge period, the clock circuit 16 opens switch 48 by providing the clock signal C in a low state. Shortly thereafter, but still before the end of the precharge period, the clock 16 opens switches 30 and 36 by providing the clock signal A in the low state. At the end of the precharge period and the start of a valid output reference period, the clock circuit 16 closes switches 32 and 38 by providing the clock signal B
in the high state. At this time, the voltage on the terminals of capacitor 28 changes by -Vbe of transistor 14 and the voltage on the terminals of capacitor 34 changes by the difference between the base to emitter voltages of the transistors 12 and 14, (Vbel2 ~ Vbel4) This swi c g event causes an amount of charye Q = Vbel4C28 + (Vbel2 ~
Vb~l4)C34 to be transferred to capacitor 44 resulting in an output voltage of Vref = ~l/c4~[-vbel4c2g + (Vbel2 ~ Vbel4) C34] on node 46. In the preferred form, this positive bandgap reference voltage, +Vref is made substantially temperature independent by making the ratio of capacitors
2~ and 34 equal to the ratio of the temperature coe~ficients of ~Vbe and Vbe. If desired, a negative bandgap reference voltage, ~Vref~ may be obtained by inverting clock signal C so that the precharge and valid output reference periods are reversed.
In general, the accuracy of the bandgap circuit 10 will be adversely affected by the offset voltage of the opera~ional amplifier. Figure 3 illustrates in schematic form, a modified form of amplifier circuit 22' which can be substituted for the amplifier circuit 22 of Figure 1 to substantially eliminate the offset voltage error.
Amplifier circuit 22' is comprised of the operational amplifier 42 which has its positive input coupled in parallel to feedback capacitor 44 and periodically discharges the feedback capacitor. However, one terminal of the feedback capacitor 44 is now connected via a switch 52 2S to the output of the operational amplifier 42 at node 4~.
Capacitor 44 is also coupled to an input signal, VIN, at node 40. In addition, an offset storage capacitor 54 is coupled between node 40 and the negative input terminal of operational amplifier 42, and a switch 56 is connected between node 40 and the reference voltage Vag. In this embodiment, the clock circuit 16' generates the additional clock signals D and E, as shown in Figure 4 for controlling the switches 56 and 50, respectively, with the inverse of clock signal D controlliny switch 52. In this configura-tion, the bandgap reference circuit 10 has three distinctperiods of operation. During the precharge period, the , -.
~7833~
clock circuit 16' provides clock signals C, D, and E in thehigh state to close switches 48, 56 and 50 and open switch 52. During this period, capacitor 44 is discharged by switch 48. The operational amplifier 42 is placed in unity gain by switch 50, and the offset storage capacitor 54 is charged to the offset voltage, VOS, of the operational amplifier 42. Near the end of the precharge period~ the clock circuit 16' provides clock signal E in the low state to open switch 50, leaving capacitor 54 charged to the offset voltage of the oeprational amplifier 42. A short time thereafter, the clock circuit 16' provides clock signal D in the low state to open switch 56 and close switch 52. Since this switching event tends to disturb the input node 40, a short settling time is preferably provided before clock circuit 16' provides clock signal C in the low state to open switch 48. Thereafter, the charge stored on feedback capacitor 44 will be changed only by a quantity of charge coupled Erom the switched capacitor sections 18 and 20. During this third period of circuit operation, labeled the valid output reference period, the reference voltage developed on the node 46 will be substantially free of any offset voltage error. If the offset capacitor 54 is periodically charged to the offset voltage, VOS, the operational amplifier 42 is effectively autozeroed, with node 40 being the zero-offset input node.
While the invention has been described in the context of a preferred embodiment, it will be apparent to those skilled in the art that the present invention may be modified in numerous ways and may assume many embodiments other than that specifically set out and described above.
Accordingly, it is intended by the appended claims to cover all modifications of the invention which fall within the true spirit and scope of the invention.
In general, the accuracy of the bandgap circuit 10 will be adversely affected by the offset voltage of the opera~ional amplifier. Figure 3 illustrates in schematic form, a modified form of amplifier circuit 22' which can be substituted for the amplifier circuit 22 of Figure 1 to substantially eliminate the offset voltage error.
Amplifier circuit 22' is comprised of the operational amplifier 42 which has its positive input coupled in parallel to feedback capacitor 44 and periodically discharges the feedback capacitor. However, one terminal of the feedback capacitor 44 is now connected via a switch 52 2S to the output of the operational amplifier 42 at node 4~.
Capacitor 44 is also coupled to an input signal, VIN, at node 40. In addition, an offset storage capacitor 54 is coupled between node 40 and the negative input terminal of operational amplifier 42, and a switch 56 is connected between node 40 and the reference voltage Vag. In this embodiment, the clock circuit 16' generates the additional clock signals D and E, as shown in Figure 4 for controlling the switches 56 and 50, respectively, with the inverse of clock signal D controlliny switch 52. In this configura-tion, the bandgap reference circuit 10 has three distinctperiods of operation. During the precharge period, the , -.
~7833~
clock circuit 16' provides clock signals C, D, and E in thehigh state to close switches 48, 56 and 50 and open switch 52. During this period, capacitor 44 is discharged by switch 48. The operational amplifier 42 is placed in unity gain by switch 50, and the offset storage capacitor 54 is charged to the offset voltage, VOS, of the operational amplifier 42. Near the end of the precharge period~ the clock circuit 16' provides clock signal E in the low state to open switch 50, leaving capacitor 54 charged to the offset voltage of the oeprational amplifier 42. A short time thereafter, the clock circuit 16' provides clock signal D in the low state to open switch 56 and close switch 52. Since this switching event tends to disturb the input node 40, a short settling time is preferably provided before clock circuit 16' provides clock signal C in the low state to open switch 48. Thereafter, the charge stored on feedback capacitor 44 will be changed only by a quantity of charge coupled Erom the switched capacitor sections 18 and 20. During this third period of circuit operation, labeled the valid output reference period, the reference voltage developed on the node 46 will be substantially free of any offset voltage error. If the offset capacitor 54 is periodically charged to the offset voltage, VOS, the operational amplifier 42 is effectively autozeroed, with node 40 being the zero-offset input node.
While the invention has been described in the context of a preferred embodiment, it will be apparent to those skilled in the art that the present invention may be modified in numerous ways and may assume many embodiments other than that specifically set out and described above.
Accordingly, it is intended by the appended claims to cover all modifications of the invention which fall within the true spirit and scope of the invention.
Claims (7)
1. A circuit for producing a substantially temperature independent reference voltage VREF, the circuit comprising:
first and second bipolar transistor means having a predetermined base voltage and biased at different current densities to develop first and second emitter voltages, respectively, on the emitters thereof;
clock means for alternately providing first and second non-overlapping clock signals;
first switched capacitance means coupled to said base voltage in response to the first clock signal and to said first emitter voltage in response to the second clock signal, for providing a first charge related to the Vbe of the first transistor means;
second switched capacitance means coupled to said second emitter voltage in response to the first clock signal and to said first emitter voltage in response to the second clock signal, for providing a second charge related to the differ-ence in the Vbe of the first and second bipolar transistor means; and amplifier means coupled to the first and second switched capacitance means for providing a reference voltage VREF proportional to the sum of the first and second charges.
first and second bipolar transistor means having a predetermined base voltage and biased at different current densities to develop first and second emitter voltages, respectively, on the emitters thereof;
clock means for alternately providing first and second non-overlapping clock signals;
first switched capacitance means coupled to said base voltage in response to the first clock signal and to said first emitter voltage in response to the second clock signal, for providing a first charge related to the Vbe of the first transistor means;
second switched capacitance means coupled to said second emitter voltage in response to the first clock signal and to said first emitter voltage in response to the second clock signal, for providing a second charge related to the differ-ence in the Vbe of the first and second bipolar transistor means; and amplifier means coupled to the first and second switched capacitance means for providing a reference voltage VREF proportional to the sum of the first and second charges.
2. The circuit of claim 1 wherein each of said switched capacitance means comprises a capacitor and switching means responsive to said clock signals.
3. The circuit of claim 2 wherein said amplifier means comprise an operational amplifier, a feedback capacitor, and switching means for periodically coupling the input and output portions of the feedback capacitor.
4. A method of producing a substantially temperature independent reference voltage VREF comprising the steps of:
biasing first and second bipolar transistor means having the same predetermined base voltage, at different current densities to develop first and second emitter voltages;
providing first and second non-overlapping clock signals;
coupling an input portion of first capacitance means to said base voltage in response to the first clock signal and to the first emitter voltage in response to the second clock signal, whereby an output portion of said first capacitance means couples a first charge related to the Vbe of the first transistor means;
coupling an input portion of second capacitance means to said second emitter voltage in response to the first clock signal and to said first emitter voltage in response to the second clock signal, whereby an output portion of said second capacitance means couples a second charge related to the difference in the Vbe of the first and second transistor means;
and amplifying the sum of the charges coupled from the output portions of the first and second capaci-tance means to provide a reference voltage VREF proportional to the sum of the first and second charges.
biasing first and second bipolar transistor means having the same predetermined base voltage, at different current densities to develop first and second emitter voltages;
providing first and second non-overlapping clock signals;
coupling an input portion of first capacitance means to said base voltage in response to the first clock signal and to the first emitter voltage in response to the second clock signal, whereby an output portion of said first capacitance means couples a first charge related to the Vbe of the first transistor means;
coupling an input portion of second capacitance means to said second emitter voltage in response to the first clock signal and to said first emitter voltage in response to the second clock signal, whereby an output portion of said second capacitance means couples a second charge related to the difference in the Vbe of the first and second transistor means;
and amplifying the sum of the charges coupled from the output portions of the first and second capaci-tance means to provide a reference voltage VREF proportional to the sum of the first and second charges.
5. A circuit for producing a substantially temperature independent reference voltage VREF, the circuit comprising:
first and second transistors having the bases thereof coupled to a predetermined bias voltage, the collectors coupled to a positive supply and the emitters thereof open;
biasing means coupled between the emitters of the first and second transistors and a negative supply biasing said first and second transistors at different current densities;
a first capacitor having a first portion coupled alternately to the predetermined bias voltage and emitter of the first transistor, for providing a first charge related to the Vbe of the first transistor;
a second capacitor having a first portion coupled alternately to the emitter of the first transistor and the emitter of the second transistor, for providing a second charge related to the difference in the Vbe Of the first and second transistors; and an amplifier coupled to the first and second capacitors for providing the reference voltage VREF proportional to the sum of the first and second charges.
first and second transistors having the bases thereof coupled to a predetermined bias voltage, the collectors coupled to a positive supply and the emitters thereof open;
biasing means coupled between the emitters of the first and second transistors and a negative supply biasing said first and second transistors at different current densities;
a first capacitor having a first portion coupled alternately to the predetermined bias voltage and emitter of the first transistor, for providing a first charge related to the Vbe of the first transistor;
a second capacitor having a first portion coupled alternately to the emitter of the first transistor and the emitter of the second transistor, for providing a second charge related to the difference in the Vbe Of the first and second transistors; and an amplifier coupled to the first and second capacitors for providing the reference voltage VREF proportional to the sum of the first and second charges.
6. The circuit of claim 5 wherein the first portions of the first and second capacitors are alter-nately coupled to the first and second transistors by clocked switches in response to non-overlapping clock signals.
7. The circuit of claim 5 wherein the amplifier comprises an operational amplifier, a feedback capacitor, and switching means for periodically discharging the feedback capacitor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/231,073 US4375595A (en) | 1981-02-03 | 1981-02-03 | Switched capacitor temperature independent bandgap reference |
| US231,073 | 1981-02-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1178338A true CA1178338A (en) | 1984-11-20 |
Family
ID=22867646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000393948A Expired CA1178338A (en) | 1981-02-03 | 1982-01-12 | Switched capacitor temperature independent bandgap reference |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4375595A (en) |
| EP (1) | EP0070315B1 (en) |
| JP (1) | JPS58500045A (en) |
| CA (1) | CA1178338A (en) |
| DE (1) | DE3273265D1 (en) |
| IT (1) | IT1150382B (en) |
| SG (1) | SG75988G (en) |
| WO (1) | WO1982002806A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4523107A (en) * | 1982-04-23 | 1985-06-11 | Motorola, Inc. | Switched capacitor comparator |
| US4484089A (en) * | 1982-08-19 | 1984-11-20 | At&T Bell Laboratories | Switched-capacitor conductance-control of variable transconductance elements |
| US4513207A (en) * | 1983-12-27 | 1985-04-23 | General Electric Company | Alternating comparator circuitry for improved discrete sampling resistance control |
| US4588941A (en) * | 1985-02-11 | 1986-05-13 | At&T Bell Laboratories | Cascode CMOS bandgap reference |
| US4736153A (en) * | 1987-08-06 | 1988-04-05 | National Semiconductor Corporation | Voltage sustainer for above VCC level signals |
| US4896094A (en) * | 1989-06-30 | 1990-01-23 | Motorola, Inc. | Bandgap reference circuit with improved output reference voltage |
| US5132556A (en) * | 1989-11-17 | 1992-07-21 | Samsung Semiconductor, Inc. | Bandgap voltage reference using bipolar parasitic transistors and mosfet's in the current source |
| US5059820A (en) * | 1990-09-19 | 1991-10-22 | Motorola, Inc. | Switched capacitor bandgap reference circuit having a time multiplexed bipolar transistor |
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|---|---|---|---|---|
| US4071813A (en) * | 1974-09-23 | 1978-01-31 | National Semiconductor Corporation | Temperature sensor |
| US4165478A (en) * | 1977-09-21 | 1979-08-21 | General Electric Company | Reference voltage source with temperature-stable MOSFET amplifier |
| US4176308A (en) * | 1977-09-21 | 1979-11-27 | National Semiconductor Corporation | Voltage regulator and current regulator |
| US4191900A (en) * | 1978-01-27 | 1980-03-04 | National Semiconductor Corporation | Precision plural input voltage amplifier and comparator |
| US4249122A (en) * | 1978-07-27 | 1981-02-03 | National Semiconductor Corporation | Temperature compensated bandgap IC voltage references |
| US4210872A (en) * | 1978-09-08 | 1980-07-01 | American Microsystems, Inc. | High pass switched capacitor filter section |
| US4287439A (en) * | 1979-04-30 | 1981-09-01 | Motorola, Inc. | MOS Bandgap reference |
| US4263519A (en) * | 1979-06-28 | 1981-04-21 | Rca Corporation | Bandgap reference |
| US4317054A (en) * | 1980-02-07 | 1982-02-23 | Mostek Corporation | Bandgap voltage reference employing sub-surface current using a standard CMOS process |
| US4295089A (en) * | 1980-06-12 | 1981-10-13 | Gte Laboratories Incorporated | Methods of and apparatus for generating reference voltages |
| US4307333A (en) * | 1980-07-29 | 1981-12-22 | Sperry Corporation | Two way regulating circuit |
| US4325018A (en) * | 1980-08-14 | 1982-04-13 | Rca Corporation | Temperature-correction network with multiple corrections as for extrapolated band-gap voltage reference circuits |
-
1981
- 1981-02-03 US US06/231,073 patent/US4375595A/en not_active Expired - Lifetime
-
1982
- 1982-01-12 CA CA000393948A patent/CA1178338A/en not_active Expired
- 1982-01-25 EP EP82900750A patent/EP0070315B1/en not_active Expired
- 1982-01-25 WO PCT/US1982/000093 patent/WO1982002806A1/en active IP Right Grant
- 1982-01-25 DE DE8282900750T patent/DE3273265D1/en not_active Expired
- 1982-01-25 JP JP57500775A patent/JPS58500045A/en active Granted
- 1982-02-01 IT IT47697/82A patent/IT1150382B/en active
-
1988
- 1988-11-15 SG SG759/88A patent/SG75988G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US4375595A (en) | 1983-03-01 |
| WO1982002806A1 (en) | 1982-08-19 |
| JPS58500045A (en) | 1983-01-06 |
| SG75988G (en) | 1989-03-23 |
| IT8247697A0 (en) | 1982-02-01 |
| IT1150382B (en) | 1986-12-10 |
| EP0070315A4 (en) | 1983-06-17 |
| DE3273265D1 (en) | 1986-10-23 |
| EP0070315B1 (en) | 1986-09-17 |
| JPH0412486B2 (en) | 1992-03-04 |
| EP0070315A1 (en) | 1983-01-26 |
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