CA1240371A - Coplanar microstrap waveguide - Google Patents

Coplanar microstrap waveguide

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Publication number
CA1240371A
CA1240371A CA000502759A CA502759A CA1240371A CA 1240371 A CA1240371 A CA 1240371A CA 000502759 A CA000502759 A CA 000502759A CA 502759 A CA502759 A CA 502759A CA 1240371 A CA1240371 A CA 1240371A
Authority
CA
Canada
Prior art keywords
straps
signal
impedance
spacings
coplanar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000502759A
Other languages
French (fr)
Inventor
H. Erwin Grellman
Carl W. Laakso
John J. Reagan
Leonard A. Roland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tektronix Inc
Original Assignee
Tektronix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tektronix Inc filed Critical Tektronix Inc
Application granted granted Critical
Publication of CA1240371A publication Critical patent/CA1240371A/en
Expired legal-status Critical Current

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    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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Abstract

COPLANAR MICROSTRAP WAVEGUIDE
ABSTRACT
An electrical connection between two semicon-ductor devices employs a coplanar microstrap waveguide comprising a plurality of thin straps of conductive metal embedded in a polyimide substrate and dimensioned to exhibit the properties of a coplanar waveguide. The waveguide structure provides the proper impedance matching between the two devices and enables them to handle signals having frequencies in the gigahertz range.

Description

~2~037~

COPLANAR MICRO STRAP WIGGED

BACKGROUND OF THE INVENTION
The following invention relates to a method and apparatus for connecting two semiconductor devices together or for connecting a semiconductor device to a passive circuit by means of a coplanar wave guide that is free from inductive reactance at high frequencies.
Small integrated circuit elements such as microprocessors are typically connected to other larger semiconductor devices such as hybrid integrated air-cults by wire bonding. The wire bonding technique utilizes a special machine to fuse extremely small diameter wires to the contact points or bond pads of these smaller IT chips. This method of physical inter-connection of one semiconductor device to another is adequate where the upper limit of the frequency of the signal between the devices is less than 10 megahertz.
At frequencies of around 100 megahertz, however, the bond wire begins to behave as an inductor inducing a reactive component in the connection that attenuates the signal level. This attenuation takes the form of a subtraction effect that occurs when a certain portion of the input frequency wave is reflected back to the source from the wire bond connection. At frequencies in the gigahertz range, the wire bond becomes an almost pure inductance which severely retards the incoming signal, and at a range of 10 to 30 gigahertz there may be complete attenuation.
In hybrid IT chips, that is relatively large chips which include a ceramic substrate, high-frequency RF signals, are transmitted via a transmission line imprinted on the chip. Such transmission lines are described generally in a text, Gut, Gang, and Bawl "Micro strip Lines and Slot lines" (Artech House, Inc., 1979). The transmission line on such circuits may take the form of a coplanar wave guide which includes a --I 129L037~.

signal-carrying conductor flanked on opposite sides by a pair of ground plane conductors. All of the conductors extend substantially parallel to one another and are coplanar. It is at the interface between the transmission line of the hybrid IT chip and a smaller integrated circuit usually referred to as a die that the bond wire connection described above is made. The transmission line of the hybrid IT is fully capable of handling frequencies in the gigahertz range but the inductive problem described above is encountered when attempting to connect the IT die to the hybrid IT transmission line.

SUMMARY OF THE INVENTION
In accordance with an aspect of the invention there is provided a high frequency electrical connector for interconnecting a pair of electrical devices comprising a plurality of substantially parallel coplanar metallic straps supported by a dielectric substrate including at least one signal-carrying strap and adjacent ground plane straps disposed one on either side of the signal-carrying strap so as to form spacings of a predetermined width between the signal-carrying strap and each of the ground plane straps, the ends of each of said straps extending beyond the edges of said dielectric substrate to provide contact points for interconnection between said electrical devices.
In accordance with another aspect of the invention there is provided a method of connecting two electrical devices together comprising the steps of: (a) forming on a dielectric substrate three substantially parallel metallic conducting straps of respective predetermined widths, said straps having predetermined spacings there-between so as to form a coplanar wave guide having a center signal-carrying strap and two adjacent ground plane straps;
(b) cutting said substrate and metallic straps, each being Jo ~.2~0371.

-pa-cut to a predetermined length and width so that the ends of said straps extend beyond the edges of said substrate;
and (c) pressure-bonding the ends of said metallic straps to respective electrical terminal points on each of said electrical devices, respectively, to form an electrical connection between the two devices.
The inductive problem posed by wire bond con-sections is solved in the present invention by providing a continuation of the transmission line of the hybrid IT in a configuration that essentially preserves the predetermined impedance of the transmission line. thus the impedance remains constant from medium to medium and does not result in any attenuation of the signal due to inductive loading at the connection between the hybrid IT and the smaller IT
die.
According to the invention, three thin metallic straps supported by a dielectric substrate are pressure-bonded to respective electrical contact points on the hybrid IT and the IT die. The three straps, which lie in the same horizontal plane, form a continuation of the transmission line of the hybrid ICY The center strap is a signal-carrying conductor and the straps on either side of the center strap form a ground plane. The straps are formed on a polyamide substrate which is a planar sheet of dielectric material. The straps are, in addition, embedded in the polyamide sheets so that the gap width between each of the straps is substantially filled with dielectric material.

I ~24~37~
The individual widths of the connecting straps are such that the outer straps may function as a ground plane. Typically the signal-carrying strap has a width of approximately 2.5 miss and the outer straps have a width of 6 miss. With these widths it is posse-bye to calculate the overall impedance of the micro-strap wave guide this impedance is equal to the square root of the ratio of inductance to capacitance. Once the impedance is known, it it possible to adjust the capacitance of the micro strap wave guide by adjusting the gap spacing between the signal-carrying central line and the two adjacent flanking ground plane lines.
Since the gap is substantially filled with a dielectric material, these lines provide a capacitive reactance to an incoming signal which may be adjusted by dimension-in the gap within tolerances achievable by existing ¦ machinery used for such purposes.
The actual physical connection between the two semiconductor devices is made by first cutting the polyamide substrate containing the micro strap connect lion to the required length and width and pressure bonding the ends of the micro straps to the respective electrical terminals on the hybrid IT and the IT die.
It is a primary object of this invention to provide an electrical connection between two semi con-dueling device capable of handling extremely high-frequency signals with little or no signal attenuation.
A further object of this invention is to provide a coplanar wave guide-connecting link between two semi conducting devices which may be bonded to each semi conducting device using conventional pressure-bonding techniques.
Yet a further object of this invention is to provide a connecting link between two semi conducting devices which overcomes the problem of inductive reactance caused by previous wire bonding techniques.

12~(~37~.

Yet a further object of this invention is to provide a coplanar wave guide transmission link between a hybrid IT chip and an IT die in which the transmission link has an impedance matching that of the impedance of the hybrid ICY
The foregoing and other objectives, features, and advantages of the invention will be more readily understood upon consideration of the following detailed description of the invention taken in conjunction with the accompanying drawings.
i:
BRIEF DESCRIPTION OF THE DRAWINGS
i FIG. 1 is a perspective view of a coplanar wave guide micro strap connecting a hybrid to an IT die.
FIG. 2 is a top view of the connection of FIG. 1.
FIG. 3 is a cutaway view taken along line 3-3 of FIG. 2.

DETAILED DESCRIPTION OF THE INVENTION
An integrated circuit chip 10, hereinafter referred to as a die" is physically mounted and affixed to a hybrid integrated circuit 12. The hybrid circuit 12 has imprinted on its surface a coplanar 1 25 wave guide 14 comprising a signal-carrying strip 16 and adjacent ground plane strips 18 and 20. A coplanar micro strap wave guide 22 forms the electrical connection between the ends of coplanar wave guide 14 and electric eel terminal points 24 on the die 10.
The structure of the coplanar micro strap ; wave guide 22 is shown in more detail in FIGS. 2 and 3.
i A substrate 26 formed of a thin dielectric material such as polyamide forms a support base for three co-planar straps 28, 30 and 32 oriented substantially parallel to one another on the substrate 26. Ground plane straps 28 and 30 are disposed one on either side ~2~)37.'1.

of a central signal-carrying strap 32. The signal-carrying strap has mitered ends 34 and 36 whose lung-lion will be explained below.
As shown in FIG. 3, the signal-carrying strap 32 and each of the ground plane straps 28 and 30, respectively, are substantially embedded in polyamide substrate 26. Embedding the straps in this manner causes the spacings 38 and 40 between adjacent pairs of straps 30 and 32, and 32 and 28, respectively, to be substantially occupied by the dielectric material of substrate 26.
Each of the ground plane straps 30 and 28 has a predetermined width designated as do in FIG. 2. The signal-carrying strap likewise has a predetermined lo width exclusive of the mitered ends and is designated as do in JIG. 2. The dimension do of the ground plane straps 30 and 28 need only be wider than a minimum value in order for the straps to function as true ground planes. thus do could be made wider if desired.
In the preferred embodiment, the dimension do is 2.5 miss and the dimension do is 6 miss. Thus, do could be wider than 6 miss but this would confer no appreciable benefit on the configuration since a Molly width is sufficient to cause straps 30 and 28 to function as a ground plane for mulled signal-carrying strap 32.
The spacings between adjacent straps 38 and 40 are .5 mix each in the preferred embodiment. The presence of a dielectric material in spacings 38 and 40 permits the spacing to be wider than that which would otherwise be permitted. For example, if air were used as a Delco-trig, the adjacent spacings between the straps would have to be on the order of .17 mix which is a difficult tolerance to maintain with conventional manufacturing processes.
The coplanar wave guide micro strap is a continuation of the coplanar wave guide 14 imprinted on hybrid circuit 12. As such, it is intended to have the ~2~03~

same impedance as coplanar wave guide 14 which is usually on the order of 50 ohms.
The impedance of any coplanar wave guide is determined by the formula Z0 = where Zoo is the impedance of the wave guide, L is the inductance and C
is the capacitance. The impedance of a coplanar wave-guide structure thus depends upon the capacitance between the conductors 28, 30 and 32 which, in turn, depends upon the dielectric constant of the substrate material, the dimensions of the micro straps, and the spacing or gap between the center signal-carrying conductor and the two ground plane conductors.
In the preferred embodiment it is desirable to make the center or signal carrying strap 32 as small as possible so that it may be physically bonded to the I connection terminals 24 of the IT die 10. These term-! nets are designed primarily for wire bonding and there-i fore the dimensions of the strap should, if possible, ¦ at least attempt to approach the dimensions of the wire with which the connection terminal was intended to be used. A practical limit which is inherent in the menu-lecturing process for micro straps of the type discussed herein is on the order of 2.5 miss.
As shown in FIG. 3 the micro straps 28, 30 and 32 are substantially embedded in the dielectric sub-striate 26. A thin top surface may protrude above the substrate 26 but it is preferred that the micro straps 28, 30 and 32 be flush with the top of substrate 26.
Thus, the gaps 38 and 40 are substantially filled with dielectric material. The thickness of each of the micro straps 28, 30 and 32 should be as small as posse-bye but again the practical limits of conductor thick-news dictate that the lower limit for such thickness is approximately 8 microns I microns.
Knowing the dimensions of the Micro straps and assuming that the dielectric material of the polyamide substrate substantially fills the adjacent ~2~037~.

spacing between micro straps, the impedance of the coplanar wave guide thus formed may be determined by reference to the text entitled "Micro strip Lines and Slot lines" Gut, Gang and Bawl tArtech House, Inc., 1979), pages 257-267.
Using the Gut text, for any desired impedance, the gap spacing between adjacent micro straps may be determined and accordingly adjusted. As mentioned previously, the normal impedance of a coplanar wave guide impressed upon a hybrid IT is usually 50 ohms. This dictates the result that in the preferred embodiment with its given parameters the gap spacings 38 and 40 should be .5 mix each.
As shown in FIG. 2 the conductors overlap the substrate enough to allow physical bonding of the ends to the hybrid IT 12 and the IT die I In order to reduce stray capacitance at each end, signal-carrying strap 32 includes mitered ends 34 and 36. This keeps the impedance of the coplanar wave guide 22 substantially constant over its entire length.
In order to form the coplanar wave guide micro strap 22, predimensioned thin straps of a predetermined length made preferably of gold or a noble metal, are embedded in a sheet of polyamide having a predetermined length. The straps overlap the ends of sheet which is then trimmed to remove excess material.
The ends of the micro straps 28, 30 and 32 are then pressured bonded to respective electrical terminal points on the IT die 10 and on the hybrid IT 12. A conventional pressure bonding machine may be used for this step, an example of which is a Kulicke Sofia Model No. 4010 Wedge Bonder from the Kulicke Sofia Co. of Hiroshima, Pennsylvania.
Although gold is preferred for making the micro straps, other metals having high conductivity such as silver, copper or aluminum may also be used.

of, ~.2403~.

The terms and expressions which have been employed in the foregoing specification are used therein as terms of description and not of limitation, and there is no intention of the use of such terms and expressions of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined add limited only by the claims which follow.

Claims (10)

Claims:
1. A high frequency electrical connector for interconnecting a pair of electrical devices comprising a plurality of substantially parallel coplanar metallic straps supported by a dielectric substrate including at least one signal-carrying strap and adjacent ground plane straps disposed one on either side of the signal-carrying strap so as to form spacings of a predetermined width between the signal-carrying strap and each of the ground plane straps, the ends of each of said straps extending beyond the edges of said dielectric substrate to provide contact points for interconnection between said electrical devices.
2. The connector of claim 1 wherein the signal-carrying strap has mitered ends.
3. The connector of claim 1 wherein the straps are embedded in the dielectric substrate such that the adjacent spacing between any two straps is substantially occupied by the dielectric substrate.
4. The connector of claim 1 wherein the straps are formed of gold.
5. The connector of claim 3 wherein the pre-determined width between adjacent straps is chosen to provide a predetermined impedance for said electrical connector which matches the impedance of at least one of the electrical devices.
6. A method of connecting two electrical devices together comprising the steps of:
(a) forming on a dielectric substrate three substantially parallel metallic conducting straps of respective predetermined widths, said straps having pre-determined spacings therebetween so as to form a coplanar waveguide having a center signal-carrying strap and two adjacent ground plane straps;

(b) cutting said substrate and metallic straps, each being cut to a predetermined length and width so that the ends of said straps extend beyond the edges of said substrate; and (c) pressure-bonding the ends of said metallic straps to respective electrical terminal points on each of said electrical devices, respectively, to form an electrical connection between the two devices.
7. The method of claim 6, further including the step of embedding the metallic straps in the substrate so that the dielectric material substantially fills the spacings between adjacent straps.
8. The method of claim 6, wherein each of said metallic straps are formed of gold.
9. The method of claim 6, wherein the forming step first includes the step of determining the impedance of the coplanar waveguide as a function of the spacings between adjacent straps and adjusting said spacings to provide said predetermined spacings so that the impedance for the waveguide substantially matches the impedance of at least one of the electrical devices.
10. The method of claim 6, further including the step of mitering the ends of the center signal-carrying strap.
CA000502759A 1985-03-07 1986-02-26 Coplanar microstrap waveguide Expired CA1240371A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/709,463 US4600907A (en) 1985-03-07 1985-03-07 Coplanar microstrap waveguide interconnector and method of interconnection
US709,463 1991-06-03

Publications (1)

Publication Number Publication Date
CA1240371A true CA1240371A (en) 1988-08-09

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CA000502759A Expired CA1240371A (en) 1985-03-07 1986-02-26 Coplanar microstrap waveguide

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US (1) US4600907A (en)
EP (1) EP0195520B1 (en)
JP (1) JPS61222246A (en)
CA (1) CA1240371A (en)
DE (1) DE3666311D1 (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162896A (en) * 1987-06-02 1992-11-10 Kabushiki Kaisha Toshiba IC package for high-speed semiconductor integrated circuit device
US4806892A (en) * 1987-11-09 1989-02-21 Trw Inc. Inclined RF connecting strip
US4891686A (en) * 1988-04-08 1990-01-02 Directed Energy, Inc. Semiconductor packaging with ground plane conductor arrangement
US4906953A (en) * 1988-09-08 1990-03-06 Varian Associates, Inc. Broadband microstrip to coplanar waveguide transition by anisotropic etching of gallium arsenide
US4891612A (en) * 1988-11-04 1990-01-02 Cascade Microtech, Inc. Overlap interfaces between coplanar transmission lines which are tolerant to transverse and longitudinal misalignment
JPH0353703A (en) * 1989-07-21 1991-03-07 Elmec Corp Terminal structure for electronic component
US5213876A (en) * 1990-01-11 1993-05-25 Hewlett-Packard Company Flexible circuit card with laser-contoured VIAs and machined capacitors
JPH0425036A (en) * 1990-05-16 1992-01-28 Mitsubishi Electric Corp Microwave semiconductor device
US6539363B1 (en) 1990-08-30 2003-03-25 Ncr Corporation Write input credit transaction apparatus and method with paperless merchant credit card processing
US5065124A (en) * 1990-09-04 1991-11-12 Watkins-Johnson Company DC-40 GHz module interface
GB9100815D0 (en) * 1991-01-15 1991-02-27 British Telecomm Coplanar waveguide ribbon
AU649325B2 (en) * 1992-01-15 1994-05-19 Comsat Corporation Low loss, broadband stripline-to-microstrip transition
JP2763445B2 (en) * 1992-04-03 1998-06-11 三菱電機株式会社 High frequency signal wiring and bonding device therefor
JP2525996B2 (en) * 1992-05-20 1996-08-21 日東電工株式会社 Flexible printed circuit board
JPH0637202A (en) * 1992-07-20 1994-02-10 Mitsubishi Electric Corp Package for microwave ic
US5270673A (en) * 1992-07-24 1993-12-14 Hewlett-Packard Company Surface mount microcircuit hybrid
US5444600A (en) * 1992-12-03 1995-08-22 Linear Technology Corporation Lead frame capacitor and capacitively-coupled isolator circuit using the same
EP0660649B1 (en) * 1993-12-22 2000-02-09 Murata Manufacturing Co., Ltd. Mounting structure for electronic component
US5583468A (en) * 1995-04-03 1996-12-10 Motorola, Inc. High frequency transition from a microstrip transmission line to an MMIC coplanar waveguide
US5974335A (en) * 1995-06-07 1999-10-26 Northrop Grumman Corporation High-temperature superconducting microwave delay line of spiral configuration
JPH09289404A (en) * 1996-04-24 1997-11-04 Honda Motor Co Ltd Ribbon,bonding wire, and package for microwave circuit
US5986331A (en) * 1996-05-30 1999-11-16 Philips Electronics North America Corp. Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate
US6023209A (en) * 1996-07-05 2000-02-08 Endgate Corporation Coplanar microwave circuit having suppression of undesired modes
US5821827A (en) * 1996-12-18 1998-10-13 Endgate Corporation Coplanar oscillator circuit structures
DK174111B1 (en) 1998-01-26 2002-06-24 Giga As Electrical connection element and method of making one
FR2799887A1 (en) * 1999-10-07 2001-04-20 Cit Alcatel Impedance-matched coplanar connection device, of tape automated bonding type, is used to connect microwave multi-chip modules together or onto printed circuits
DE20012450U1 (en) * 2000-07-18 2000-11-23 Rosenberger Hochfrequenztech Housing for an integrated circuit
DE10143173A1 (en) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafer probe has contact finger array with impedance matching network suitable for wide band
US6490379B2 (en) * 2001-05-07 2002-12-03 Corning Incorporated Electrical transmission frequency of SiOB
GB2378045A (en) * 2001-07-25 2003-01-29 Marconi Caswell Ltd Electrical connection with flexible coplanar transmission line
US6812805B2 (en) * 2001-08-16 2004-11-02 Multiplex, Inc. Differential transmission line for high bandwidth signals
AU2003233659A1 (en) * 2002-05-23 2003-12-12 Cascade Microtech, Inc. Probe for testing a device under test
DE10228328A1 (en) * 2002-06-25 2004-01-22 Epcos Ag Electronic component with a multilayer substrate and manufacturing process
EP1573812A1 (en) * 2002-12-10 2005-09-14 Koninklijke Philips Electronics N.V. High density package interconnect power and ground strap and method therefor
WO2004053987A1 (en) * 2002-12-10 2004-06-24 Koninklijke Philips Electronics N.V. High density package interconnect wire bond strip line and method therefor
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
KR100960496B1 (en) * 2003-10-31 2010-06-01 엘지디스플레이 주식회사 Rubbing method of liquid crystal display device
DE202004021093U1 (en) 2003-12-24 2006-09-28 Cascade Microtech, Inc., Beaverton Differential probe for e.g. integrated circuit, has elongate probing units interconnected to respective active circuits that are interconnected to substrate by respective pair of flexible interconnects
US7813145B2 (en) * 2004-06-30 2010-10-12 Endwave Corporation Circuit structure with multifunction circuit cover
DE202005021435U1 (en) 2004-09-13 2008-02-28 Cascade Microtech, Inc., Beaverton Double-sided test setups
JP3992038B2 (en) * 2004-11-16 2007-10-17 セイコーエプソン株式会社 Electronic element mounting method, electronic device manufacturing method, circuit board, electronic device
DE102005002707B4 (en) * 2005-01-19 2007-07-26 Infineon Technologies Ag Method for producing electrical connections in a semiconductor device by means of coaxial microconnection elements
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7403028B2 (en) * 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US7940067B2 (en) * 2008-09-08 2011-05-10 Tektronix, Inc. Probe with printed tip
US7888957B2 (en) * 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
WO2010059247A2 (en) 2008-11-21 2010-05-27 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
CN101794929B (en) * 2009-12-26 2013-01-02 华为技术有限公司 Device for improving transmission bandwidth
EP2806512A4 (en) * 2012-01-19 2015-10-07 Asus Technology Suzhou Co Ltd Connector and electronic system using the same
US9557791B2 (en) 2012-02-29 2017-01-31 Asus Technology (Suzhou) Co., Ltd. Computer device and method for converting working mode of universal serial bus connector of the computer device
CN105785299A (en) * 2014-12-24 2016-07-20 北京无线电计量测试研究所 Coplanar waveguide reflection amplitude etalon of on-chip measurement system and design method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA557003A (en) * 1958-05-06 D. Grieg Donald Microwave wire and cable
US3398232A (en) * 1965-10-19 1968-08-20 Amp Inc Circuit board with interconnected signal conductors and interconnected shielding conductors
US3560893A (en) * 1968-12-27 1971-02-02 Rca Corp Surface strip transmission line and microwave devices using same
JPS4947713B1 (en) * 1970-04-27 1974-12-17
US3848198A (en) * 1972-12-14 1974-11-12 Rca Corp Microwave transmission line and devices using multiple coplanar conductors
US3975690A (en) * 1974-10-07 1976-08-17 Communicatons Satellite Corporation (Comsat) Planar transmission line comprising a material having negative differential conductivity
US4386324A (en) * 1980-12-05 1983-05-31 Hughes Aircraft Company Planar chip-level power combiner
EP0070104A3 (en) * 1981-07-10 1985-05-15 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Circuit matching elements

Also Published As

Publication number Publication date
EP0195520B1 (en) 1989-10-11
DE3666311D1 (en) 1989-11-16
EP0195520A1 (en) 1986-09-24
JPH0321089B2 (en) 1991-03-20
US4600907A (en) 1986-07-15
JPS61222246A (en) 1986-10-02

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