CA1240371A - Coplanar microstrap waveguide - Google Patents
Coplanar microstrap waveguideInfo
- Publication number
- CA1240371A CA1240371A CA000502759A CA502759A CA1240371A CA 1240371 A CA1240371 A CA 1240371A CA 000502759 A CA000502759 A CA 000502759A CA 502759 A CA502759 A CA 502759A CA 1240371 A CA1240371 A CA 1240371A
- Authority
- CA
- Canada
- Prior art keywords
- straps
- signal
- impedance
- spacings
- coplanar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/04—Fixed joints
- H01P1/047—Strip line joints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
- Y10T29/49135—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting and shaping, e.g., cutting or bending, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49139—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture
- Y10T29/4914—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture with deforming of lead or terminal
- Y10T29/49142—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture with deforming of lead or terminal including metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
- Y10T29/49149—Assembling terminal to base by metal fusion bonding
Abstract
COPLANAR MICROSTRAP WAVEGUIDE
ABSTRACT
An electrical connection between two semicon-ductor devices employs a coplanar microstrap waveguide comprising a plurality of thin straps of conductive metal embedded in a polyimide substrate and dimensioned to exhibit the properties of a coplanar waveguide. The waveguide structure provides the proper impedance matching between the two devices and enables them to handle signals having frequencies in the gigahertz range.
ABSTRACT
An electrical connection between two semicon-ductor devices employs a coplanar microstrap waveguide comprising a plurality of thin straps of conductive metal embedded in a polyimide substrate and dimensioned to exhibit the properties of a coplanar waveguide. The waveguide structure provides the proper impedance matching between the two devices and enables them to handle signals having frequencies in the gigahertz range.
Description
~2~037~
COPLANAR MICRO STRAP WIGGED
BACKGROUND OF THE INVENTION
The following invention relates to a method and apparatus for connecting two semiconductor devices together or for connecting a semiconductor device to a passive circuit by means of a coplanar wave guide that is free from inductive reactance at high frequencies.
Small integrated circuit elements such as microprocessors are typically connected to other larger semiconductor devices such as hybrid integrated air-cults by wire bonding. The wire bonding technique utilizes a special machine to fuse extremely small diameter wires to the contact points or bond pads of these smaller IT chips. This method of physical inter-connection of one semiconductor device to another is adequate where the upper limit of the frequency of the signal between the devices is less than 10 megahertz.
At frequencies of around 100 megahertz, however, the bond wire begins to behave as an inductor inducing a reactive component in the connection that attenuates the signal level. This attenuation takes the form of a subtraction effect that occurs when a certain portion of the input frequency wave is reflected back to the source from the wire bond connection. At frequencies in the gigahertz range, the wire bond becomes an almost pure inductance which severely retards the incoming signal, and at a range of 10 to 30 gigahertz there may be complete attenuation.
In hybrid IT chips, that is relatively large chips which include a ceramic substrate, high-frequency RF signals, are transmitted via a transmission line imprinted on the chip. Such transmission lines are described generally in a text, Gut, Gang, and Bawl "Micro strip Lines and Slot lines" (Artech House, Inc., 1979). The transmission line on such circuits may take the form of a coplanar wave guide which includes a --I 129L037~.
signal-carrying conductor flanked on opposite sides by a pair of ground plane conductors. All of the conductors extend substantially parallel to one another and are coplanar. It is at the interface between the transmission line of the hybrid IT chip and a smaller integrated circuit usually referred to as a die that the bond wire connection described above is made. The transmission line of the hybrid IT is fully capable of handling frequencies in the gigahertz range but the inductive problem described above is encountered when attempting to connect the IT die to the hybrid IT transmission line.
SUMMARY OF THE INVENTION
In accordance with an aspect of the invention there is provided a high frequency electrical connector for interconnecting a pair of electrical devices comprising a plurality of substantially parallel coplanar metallic straps supported by a dielectric substrate including at least one signal-carrying strap and adjacent ground plane straps disposed one on either side of the signal-carrying strap so as to form spacings of a predetermined width between the signal-carrying strap and each of the ground plane straps, the ends of each of said straps extending beyond the edges of said dielectric substrate to provide contact points for interconnection between said electrical devices.
In accordance with another aspect of the invention there is provided a method of connecting two electrical devices together comprising the steps of: (a) forming on a dielectric substrate three substantially parallel metallic conducting straps of respective predetermined widths, said straps having predetermined spacings there-between so as to form a coplanar wave guide having a center signal-carrying strap and two adjacent ground plane straps;
(b) cutting said substrate and metallic straps, each being Jo ~.2~0371.
-pa-cut to a predetermined length and width so that the ends of said straps extend beyond the edges of said substrate;
and (c) pressure-bonding the ends of said metallic straps to respective electrical terminal points on each of said electrical devices, respectively, to form an electrical connection between the two devices.
The inductive problem posed by wire bond con-sections is solved in the present invention by providing a continuation of the transmission line of the hybrid IT in a configuration that essentially preserves the predetermined impedance of the transmission line. thus the impedance remains constant from medium to medium and does not result in any attenuation of the signal due to inductive loading at the connection between the hybrid IT and the smaller IT
die.
According to the invention, three thin metallic straps supported by a dielectric substrate are pressure-bonded to respective electrical contact points on the hybrid IT and the IT die. The three straps, which lie in the same horizontal plane, form a continuation of the transmission line of the hybrid ICY The center strap is a signal-carrying conductor and the straps on either side of the center strap form a ground plane. The straps are formed on a polyamide substrate which is a planar sheet of dielectric material. The straps are, in addition, embedded in the polyamide sheets so that the gap width between each of the straps is substantially filled with dielectric material.
I ~24~37~
The individual widths of the connecting straps are such that the outer straps may function as a ground plane. Typically the signal-carrying strap has a width of approximately 2.5 miss and the outer straps have a width of 6 miss. With these widths it is posse-bye to calculate the overall impedance of the micro-strap wave guide this impedance is equal to the square root of the ratio of inductance to capacitance. Once the impedance is known, it it possible to adjust the capacitance of the micro strap wave guide by adjusting the gap spacing between the signal-carrying central line and the two adjacent flanking ground plane lines.
Since the gap is substantially filled with a dielectric material, these lines provide a capacitive reactance to an incoming signal which may be adjusted by dimension-in the gap within tolerances achievable by existing ¦ machinery used for such purposes.
The actual physical connection between the two semiconductor devices is made by first cutting the polyamide substrate containing the micro strap connect lion to the required length and width and pressure bonding the ends of the micro straps to the respective electrical terminals on the hybrid IT and the IT die.
It is a primary object of this invention to provide an electrical connection between two semi con-dueling device capable of handling extremely high-frequency signals with little or no signal attenuation.
A further object of this invention is to provide a coplanar wave guide-connecting link between two semi conducting devices which may be bonded to each semi conducting device using conventional pressure-bonding techniques.
Yet a further object of this invention is to provide a connecting link between two semi conducting devices which overcomes the problem of inductive reactance caused by previous wire bonding techniques.
12~(~37~.
Yet a further object of this invention is to provide a coplanar wave guide transmission link between a hybrid IT chip and an IT die in which the transmission link has an impedance matching that of the impedance of the hybrid ICY
The foregoing and other objectives, features, and advantages of the invention will be more readily understood upon consideration of the following detailed description of the invention taken in conjunction with the accompanying drawings.
i:
BRIEF DESCRIPTION OF THE DRAWINGS
i FIG. 1 is a perspective view of a coplanar wave guide micro strap connecting a hybrid to an IT die.
FIG. 2 is a top view of the connection of FIG. 1.
FIG. 3 is a cutaway view taken along line 3-3 of FIG. 2.
DETAILED DESCRIPTION OF THE INVENTION
An integrated circuit chip 10, hereinafter referred to as a die" is physically mounted and affixed to a hybrid integrated circuit 12. The hybrid circuit 12 has imprinted on its surface a coplanar 1 25 wave guide 14 comprising a signal-carrying strip 16 and adjacent ground plane strips 18 and 20. A coplanar micro strap wave guide 22 forms the electrical connection between the ends of coplanar wave guide 14 and electric eel terminal points 24 on the die 10.
The structure of the coplanar micro strap ; wave guide 22 is shown in more detail in FIGS. 2 and 3.
i A substrate 26 formed of a thin dielectric material such as polyamide forms a support base for three co-planar straps 28, 30 and 32 oriented substantially parallel to one another on the substrate 26. Ground plane straps 28 and 30 are disposed one on either side ~2~)37.'1.
of a central signal-carrying strap 32. The signal-carrying strap has mitered ends 34 and 36 whose lung-lion will be explained below.
As shown in FIG. 3, the signal-carrying strap 32 and each of the ground plane straps 28 and 30, respectively, are substantially embedded in polyamide substrate 26. Embedding the straps in this manner causes the spacings 38 and 40 between adjacent pairs of straps 30 and 32, and 32 and 28, respectively, to be substantially occupied by the dielectric material of substrate 26.
Each of the ground plane straps 30 and 28 has a predetermined width designated as do in FIG. 2. The signal-carrying strap likewise has a predetermined lo width exclusive of the mitered ends and is designated as do in JIG. 2. The dimension do of the ground plane straps 30 and 28 need only be wider than a minimum value in order for the straps to function as true ground planes. thus do could be made wider if desired.
In the preferred embodiment, the dimension do is 2.5 miss and the dimension do is 6 miss. Thus, do could be wider than 6 miss but this would confer no appreciable benefit on the configuration since a Molly width is sufficient to cause straps 30 and 28 to function as a ground plane for mulled signal-carrying strap 32.
The spacings between adjacent straps 38 and 40 are .5 mix each in the preferred embodiment. The presence of a dielectric material in spacings 38 and 40 permits the spacing to be wider than that which would otherwise be permitted. For example, if air were used as a Delco-trig, the adjacent spacings between the straps would have to be on the order of .17 mix which is a difficult tolerance to maintain with conventional manufacturing processes.
The coplanar wave guide micro strap is a continuation of the coplanar wave guide 14 imprinted on hybrid circuit 12. As such, it is intended to have the ~2~03~
same impedance as coplanar wave guide 14 which is usually on the order of 50 ohms.
The impedance of any coplanar wave guide is determined by the formula Z0 = where Zoo is the impedance of the wave guide, L is the inductance and C
is the capacitance. The impedance of a coplanar wave-guide structure thus depends upon the capacitance between the conductors 28, 30 and 32 which, in turn, depends upon the dielectric constant of the substrate material, the dimensions of the micro straps, and the spacing or gap between the center signal-carrying conductor and the two ground plane conductors.
In the preferred embodiment it is desirable to make the center or signal carrying strap 32 as small as possible so that it may be physically bonded to the I connection terminals 24 of the IT die 10. These term-! nets are designed primarily for wire bonding and there-i fore the dimensions of the strap should, if possible, ¦ at least attempt to approach the dimensions of the wire with which the connection terminal was intended to be used. A practical limit which is inherent in the menu-lecturing process for micro straps of the type discussed herein is on the order of 2.5 miss.
As shown in FIG. 3 the micro straps 28, 30 and 32 are substantially embedded in the dielectric sub-striate 26. A thin top surface may protrude above the substrate 26 but it is preferred that the micro straps 28, 30 and 32 be flush with the top of substrate 26.
Thus, the gaps 38 and 40 are substantially filled with dielectric material. The thickness of each of the micro straps 28, 30 and 32 should be as small as posse-bye but again the practical limits of conductor thick-news dictate that the lower limit for such thickness is approximately 8 microns I microns.
Knowing the dimensions of the Micro straps and assuming that the dielectric material of the polyamide substrate substantially fills the adjacent ~2~037~.
spacing between micro straps, the impedance of the coplanar wave guide thus formed may be determined by reference to the text entitled "Micro strip Lines and Slot lines" Gut, Gang and Bawl tArtech House, Inc., 1979), pages 257-267.
Using the Gut text, for any desired impedance, the gap spacing between adjacent micro straps may be determined and accordingly adjusted. As mentioned previously, the normal impedance of a coplanar wave guide impressed upon a hybrid IT is usually 50 ohms. This dictates the result that in the preferred embodiment with its given parameters the gap spacings 38 and 40 should be .5 mix each.
As shown in FIG. 2 the conductors overlap the substrate enough to allow physical bonding of the ends to the hybrid IT 12 and the IT die I In order to reduce stray capacitance at each end, signal-carrying strap 32 includes mitered ends 34 and 36. This keeps the impedance of the coplanar wave guide 22 substantially constant over its entire length.
In order to form the coplanar wave guide micro strap 22, predimensioned thin straps of a predetermined length made preferably of gold or a noble metal, are embedded in a sheet of polyamide having a predetermined length. The straps overlap the ends of sheet which is then trimmed to remove excess material.
The ends of the micro straps 28, 30 and 32 are then pressured bonded to respective electrical terminal points on the IT die 10 and on the hybrid IT 12. A conventional pressure bonding machine may be used for this step, an example of which is a Kulicke Sofia Model No. 4010 Wedge Bonder from the Kulicke Sofia Co. of Hiroshima, Pennsylvania.
Although gold is preferred for making the micro straps, other metals having high conductivity such as silver, copper or aluminum may also be used.
of, ~.2403~.
The terms and expressions which have been employed in the foregoing specification are used therein as terms of description and not of limitation, and there is no intention of the use of such terms and expressions of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined add limited only by the claims which follow.
COPLANAR MICRO STRAP WIGGED
BACKGROUND OF THE INVENTION
The following invention relates to a method and apparatus for connecting two semiconductor devices together or for connecting a semiconductor device to a passive circuit by means of a coplanar wave guide that is free from inductive reactance at high frequencies.
Small integrated circuit elements such as microprocessors are typically connected to other larger semiconductor devices such as hybrid integrated air-cults by wire bonding. The wire bonding technique utilizes a special machine to fuse extremely small diameter wires to the contact points or bond pads of these smaller IT chips. This method of physical inter-connection of one semiconductor device to another is adequate where the upper limit of the frequency of the signal between the devices is less than 10 megahertz.
At frequencies of around 100 megahertz, however, the bond wire begins to behave as an inductor inducing a reactive component in the connection that attenuates the signal level. This attenuation takes the form of a subtraction effect that occurs when a certain portion of the input frequency wave is reflected back to the source from the wire bond connection. At frequencies in the gigahertz range, the wire bond becomes an almost pure inductance which severely retards the incoming signal, and at a range of 10 to 30 gigahertz there may be complete attenuation.
In hybrid IT chips, that is relatively large chips which include a ceramic substrate, high-frequency RF signals, are transmitted via a transmission line imprinted on the chip. Such transmission lines are described generally in a text, Gut, Gang, and Bawl "Micro strip Lines and Slot lines" (Artech House, Inc., 1979). The transmission line on such circuits may take the form of a coplanar wave guide which includes a --I 129L037~.
signal-carrying conductor flanked on opposite sides by a pair of ground plane conductors. All of the conductors extend substantially parallel to one another and are coplanar. It is at the interface between the transmission line of the hybrid IT chip and a smaller integrated circuit usually referred to as a die that the bond wire connection described above is made. The transmission line of the hybrid IT is fully capable of handling frequencies in the gigahertz range but the inductive problem described above is encountered when attempting to connect the IT die to the hybrid IT transmission line.
SUMMARY OF THE INVENTION
In accordance with an aspect of the invention there is provided a high frequency electrical connector for interconnecting a pair of electrical devices comprising a plurality of substantially parallel coplanar metallic straps supported by a dielectric substrate including at least one signal-carrying strap and adjacent ground plane straps disposed one on either side of the signal-carrying strap so as to form spacings of a predetermined width between the signal-carrying strap and each of the ground plane straps, the ends of each of said straps extending beyond the edges of said dielectric substrate to provide contact points for interconnection between said electrical devices.
In accordance with another aspect of the invention there is provided a method of connecting two electrical devices together comprising the steps of: (a) forming on a dielectric substrate three substantially parallel metallic conducting straps of respective predetermined widths, said straps having predetermined spacings there-between so as to form a coplanar wave guide having a center signal-carrying strap and two adjacent ground plane straps;
(b) cutting said substrate and metallic straps, each being Jo ~.2~0371.
-pa-cut to a predetermined length and width so that the ends of said straps extend beyond the edges of said substrate;
and (c) pressure-bonding the ends of said metallic straps to respective electrical terminal points on each of said electrical devices, respectively, to form an electrical connection between the two devices.
The inductive problem posed by wire bond con-sections is solved in the present invention by providing a continuation of the transmission line of the hybrid IT in a configuration that essentially preserves the predetermined impedance of the transmission line. thus the impedance remains constant from medium to medium and does not result in any attenuation of the signal due to inductive loading at the connection between the hybrid IT and the smaller IT
die.
According to the invention, three thin metallic straps supported by a dielectric substrate are pressure-bonded to respective electrical contact points on the hybrid IT and the IT die. The three straps, which lie in the same horizontal plane, form a continuation of the transmission line of the hybrid ICY The center strap is a signal-carrying conductor and the straps on either side of the center strap form a ground plane. The straps are formed on a polyamide substrate which is a planar sheet of dielectric material. The straps are, in addition, embedded in the polyamide sheets so that the gap width between each of the straps is substantially filled with dielectric material.
I ~24~37~
The individual widths of the connecting straps are such that the outer straps may function as a ground plane. Typically the signal-carrying strap has a width of approximately 2.5 miss and the outer straps have a width of 6 miss. With these widths it is posse-bye to calculate the overall impedance of the micro-strap wave guide this impedance is equal to the square root of the ratio of inductance to capacitance. Once the impedance is known, it it possible to adjust the capacitance of the micro strap wave guide by adjusting the gap spacing between the signal-carrying central line and the two adjacent flanking ground plane lines.
Since the gap is substantially filled with a dielectric material, these lines provide a capacitive reactance to an incoming signal which may be adjusted by dimension-in the gap within tolerances achievable by existing ¦ machinery used for such purposes.
The actual physical connection between the two semiconductor devices is made by first cutting the polyamide substrate containing the micro strap connect lion to the required length and width and pressure bonding the ends of the micro straps to the respective electrical terminals on the hybrid IT and the IT die.
It is a primary object of this invention to provide an electrical connection between two semi con-dueling device capable of handling extremely high-frequency signals with little or no signal attenuation.
A further object of this invention is to provide a coplanar wave guide-connecting link between two semi conducting devices which may be bonded to each semi conducting device using conventional pressure-bonding techniques.
Yet a further object of this invention is to provide a connecting link between two semi conducting devices which overcomes the problem of inductive reactance caused by previous wire bonding techniques.
12~(~37~.
Yet a further object of this invention is to provide a coplanar wave guide transmission link between a hybrid IT chip and an IT die in which the transmission link has an impedance matching that of the impedance of the hybrid ICY
The foregoing and other objectives, features, and advantages of the invention will be more readily understood upon consideration of the following detailed description of the invention taken in conjunction with the accompanying drawings.
i:
BRIEF DESCRIPTION OF THE DRAWINGS
i FIG. 1 is a perspective view of a coplanar wave guide micro strap connecting a hybrid to an IT die.
FIG. 2 is a top view of the connection of FIG. 1.
FIG. 3 is a cutaway view taken along line 3-3 of FIG. 2.
DETAILED DESCRIPTION OF THE INVENTION
An integrated circuit chip 10, hereinafter referred to as a die" is physically mounted and affixed to a hybrid integrated circuit 12. The hybrid circuit 12 has imprinted on its surface a coplanar 1 25 wave guide 14 comprising a signal-carrying strip 16 and adjacent ground plane strips 18 and 20. A coplanar micro strap wave guide 22 forms the electrical connection between the ends of coplanar wave guide 14 and electric eel terminal points 24 on the die 10.
The structure of the coplanar micro strap ; wave guide 22 is shown in more detail in FIGS. 2 and 3.
i A substrate 26 formed of a thin dielectric material such as polyamide forms a support base for three co-planar straps 28, 30 and 32 oriented substantially parallel to one another on the substrate 26. Ground plane straps 28 and 30 are disposed one on either side ~2~)37.'1.
of a central signal-carrying strap 32. The signal-carrying strap has mitered ends 34 and 36 whose lung-lion will be explained below.
As shown in FIG. 3, the signal-carrying strap 32 and each of the ground plane straps 28 and 30, respectively, are substantially embedded in polyamide substrate 26. Embedding the straps in this manner causes the spacings 38 and 40 between adjacent pairs of straps 30 and 32, and 32 and 28, respectively, to be substantially occupied by the dielectric material of substrate 26.
Each of the ground plane straps 30 and 28 has a predetermined width designated as do in FIG. 2. The signal-carrying strap likewise has a predetermined lo width exclusive of the mitered ends and is designated as do in JIG. 2. The dimension do of the ground plane straps 30 and 28 need only be wider than a minimum value in order for the straps to function as true ground planes. thus do could be made wider if desired.
In the preferred embodiment, the dimension do is 2.5 miss and the dimension do is 6 miss. Thus, do could be wider than 6 miss but this would confer no appreciable benefit on the configuration since a Molly width is sufficient to cause straps 30 and 28 to function as a ground plane for mulled signal-carrying strap 32.
The spacings between adjacent straps 38 and 40 are .5 mix each in the preferred embodiment. The presence of a dielectric material in spacings 38 and 40 permits the spacing to be wider than that which would otherwise be permitted. For example, if air were used as a Delco-trig, the adjacent spacings between the straps would have to be on the order of .17 mix which is a difficult tolerance to maintain with conventional manufacturing processes.
The coplanar wave guide micro strap is a continuation of the coplanar wave guide 14 imprinted on hybrid circuit 12. As such, it is intended to have the ~2~03~
same impedance as coplanar wave guide 14 which is usually on the order of 50 ohms.
The impedance of any coplanar wave guide is determined by the formula Z0 = where Zoo is the impedance of the wave guide, L is the inductance and C
is the capacitance. The impedance of a coplanar wave-guide structure thus depends upon the capacitance between the conductors 28, 30 and 32 which, in turn, depends upon the dielectric constant of the substrate material, the dimensions of the micro straps, and the spacing or gap between the center signal-carrying conductor and the two ground plane conductors.
In the preferred embodiment it is desirable to make the center or signal carrying strap 32 as small as possible so that it may be physically bonded to the I connection terminals 24 of the IT die 10. These term-! nets are designed primarily for wire bonding and there-i fore the dimensions of the strap should, if possible, ¦ at least attempt to approach the dimensions of the wire with which the connection terminal was intended to be used. A practical limit which is inherent in the menu-lecturing process for micro straps of the type discussed herein is on the order of 2.5 miss.
As shown in FIG. 3 the micro straps 28, 30 and 32 are substantially embedded in the dielectric sub-striate 26. A thin top surface may protrude above the substrate 26 but it is preferred that the micro straps 28, 30 and 32 be flush with the top of substrate 26.
Thus, the gaps 38 and 40 are substantially filled with dielectric material. The thickness of each of the micro straps 28, 30 and 32 should be as small as posse-bye but again the practical limits of conductor thick-news dictate that the lower limit for such thickness is approximately 8 microns I microns.
Knowing the dimensions of the Micro straps and assuming that the dielectric material of the polyamide substrate substantially fills the adjacent ~2~037~.
spacing between micro straps, the impedance of the coplanar wave guide thus formed may be determined by reference to the text entitled "Micro strip Lines and Slot lines" Gut, Gang and Bawl tArtech House, Inc., 1979), pages 257-267.
Using the Gut text, for any desired impedance, the gap spacing between adjacent micro straps may be determined and accordingly adjusted. As mentioned previously, the normal impedance of a coplanar wave guide impressed upon a hybrid IT is usually 50 ohms. This dictates the result that in the preferred embodiment with its given parameters the gap spacings 38 and 40 should be .5 mix each.
As shown in FIG. 2 the conductors overlap the substrate enough to allow physical bonding of the ends to the hybrid IT 12 and the IT die I In order to reduce stray capacitance at each end, signal-carrying strap 32 includes mitered ends 34 and 36. This keeps the impedance of the coplanar wave guide 22 substantially constant over its entire length.
In order to form the coplanar wave guide micro strap 22, predimensioned thin straps of a predetermined length made preferably of gold or a noble metal, are embedded in a sheet of polyamide having a predetermined length. The straps overlap the ends of sheet which is then trimmed to remove excess material.
The ends of the micro straps 28, 30 and 32 are then pressured bonded to respective electrical terminal points on the IT die 10 and on the hybrid IT 12. A conventional pressure bonding machine may be used for this step, an example of which is a Kulicke Sofia Model No. 4010 Wedge Bonder from the Kulicke Sofia Co. of Hiroshima, Pennsylvania.
Although gold is preferred for making the micro straps, other metals having high conductivity such as silver, copper or aluminum may also be used.
of, ~.2403~.
The terms and expressions which have been employed in the foregoing specification are used therein as terms of description and not of limitation, and there is no intention of the use of such terms and expressions of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined add limited only by the claims which follow.
Claims (10)
1. A high frequency electrical connector for interconnecting a pair of electrical devices comprising a plurality of substantially parallel coplanar metallic straps supported by a dielectric substrate including at least one signal-carrying strap and adjacent ground plane straps disposed one on either side of the signal-carrying strap so as to form spacings of a predetermined width between the signal-carrying strap and each of the ground plane straps, the ends of each of said straps extending beyond the edges of said dielectric substrate to provide contact points for interconnection between said electrical devices.
2. The connector of claim 1 wherein the signal-carrying strap has mitered ends.
3. The connector of claim 1 wherein the straps are embedded in the dielectric substrate such that the adjacent spacing between any two straps is substantially occupied by the dielectric substrate.
4. The connector of claim 1 wherein the straps are formed of gold.
5. The connector of claim 3 wherein the pre-determined width between adjacent straps is chosen to provide a predetermined impedance for said electrical connector which matches the impedance of at least one of the electrical devices.
6. A method of connecting two electrical devices together comprising the steps of:
(a) forming on a dielectric substrate three substantially parallel metallic conducting straps of respective predetermined widths, said straps having pre-determined spacings therebetween so as to form a coplanar waveguide having a center signal-carrying strap and two adjacent ground plane straps;
(b) cutting said substrate and metallic straps, each being cut to a predetermined length and width so that the ends of said straps extend beyond the edges of said substrate; and (c) pressure-bonding the ends of said metallic straps to respective electrical terminal points on each of said electrical devices, respectively, to form an electrical connection between the two devices.
(a) forming on a dielectric substrate three substantially parallel metallic conducting straps of respective predetermined widths, said straps having pre-determined spacings therebetween so as to form a coplanar waveguide having a center signal-carrying strap and two adjacent ground plane straps;
(b) cutting said substrate and metallic straps, each being cut to a predetermined length and width so that the ends of said straps extend beyond the edges of said substrate; and (c) pressure-bonding the ends of said metallic straps to respective electrical terminal points on each of said electrical devices, respectively, to form an electrical connection between the two devices.
7. The method of claim 6, further including the step of embedding the metallic straps in the substrate so that the dielectric material substantially fills the spacings between adjacent straps.
8. The method of claim 6, wherein each of said metallic straps are formed of gold.
9. The method of claim 6, wherein the forming step first includes the step of determining the impedance of the coplanar waveguide as a function of the spacings between adjacent straps and adjusting said spacings to provide said predetermined spacings so that the impedance for the waveguide substantially matches the impedance of at least one of the electrical devices.
10. The method of claim 6, further including the step of mitering the ends of the center signal-carrying strap.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/709,463 US4600907A (en) | 1985-03-07 | 1985-03-07 | Coplanar microstrap waveguide interconnector and method of interconnection |
US709,463 | 1991-06-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1240371A true CA1240371A (en) | 1988-08-09 |
Family
ID=24849956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000502759A Expired CA1240371A (en) | 1985-03-07 | 1986-02-26 | Coplanar microstrap waveguide |
Country Status (5)
Country | Link |
---|---|
US (1) | US4600907A (en) |
EP (1) | EP0195520B1 (en) |
JP (1) | JPS61222246A (en) |
CA (1) | CA1240371A (en) |
DE (1) | DE3666311D1 (en) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162896A (en) * | 1987-06-02 | 1992-11-10 | Kabushiki Kaisha Toshiba | IC package for high-speed semiconductor integrated circuit device |
US4806892A (en) * | 1987-11-09 | 1989-02-21 | Trw Inc. | Inclined RF connecting strip |
US4891686A (en) * | 1988-04-08 | 1990-01-02 | Directed Energy, Inc. | Semiconductor packaging with ground plane conductor arrangement |
US4906953A (en) * | 1988-09-08 | 1990-03-06 | Varian Associates, Inc. | Broadband microstrip to coplanar waveguide transition by anisotropic etching of gallium arsenide |
US4891612A (en) * | 1988-11-04 | 1990-01-02 | Cascade Microtech, Inc. | Overlap interfaces between coplanar transmission lines which are tolerant to transverse and longitudinal misalignment |
JPH0353703A (en) * | 1989-07-21 | 1991-03-07 | Elmec Corp | Terminal structure for electronic component |
US5213876A (en) * | 1990-01-11 | 1993-05-25 | Hewlett-Packard Company | Flexible circuit card with laser-contoured VIAs and machined capacitors |
JPH0425036A (en) * | 1990-05-16 | 1992-01-28 | Mitsubishi Electric Corp | Microwave semiconductor device |
US6539363B1 (en) | 1990-08-30 | 2003-03-25 | Ncr Corporation | Write input credit transaction apparatus and method with paperless merchant credit card processing |
US5065124A (en) * | 1990-09-04 | 1991-11-12 | Watkins-Johnson Company | DC-40 GHz module interface |
GB9100815D0 (en) * | 1991-01-15 | 1991-02-27 | British Telecomm | Coplanar waveguide ribbon |
AU649325B2 (en) * | 1992-01-15 | 1994-05-19 | Comsat Corporation | Low loss, broadband stripline-to-microstrip transition |
JP2763445B2 (en) * | 1992-04-03 | 1998-06-11 | 三菱電機株式会社 | High frequency signal wiring and bonding device therefor |
JP2525996B2 (en) * | 1992-05-20 | 1996-08-21 | 日東電工株式会社 | Flexible printed circuit board |
JPH0637202A (en) * | 1992-07-20 | 1994-02-10 | Mitsubishi Electric Corp | Package for microwave ic |
US5270673A (en) * | 1992-07-24 | 1993-12-14 | Hewlett-Packard Company | Surface mount microcircuit hybrid |
US5444600A (en) * | 1992-12-03 | 1995-08-22 | Linear Technology Corporation | Lead frame capacitor and capacitively-coupled isolator circuit using the same |
EP0660649B1 (en) * | 1993-12-22 | 2000-02-09 | Murata Manufacturing Co., Ltd. | Mounting structure for electronic component |
US5583468A (en) * | 1995-04-03 | 1996-12-10 | Motorola, Inc. | High frequency transition from a microstrip transmission line to an MMIC coplanar waveguide |
US5974335A (en) * | 1995-06-07 | 1999-10-26 | Northrop Grumman Corporation | High-temperature superconducting microwave delay line of spiral configuration |
JPH09289404A (en) * | 1996-04-24 | 1997-11-04 | Honda Motor Co Ltd | Ribbon,bonding wire, and package for microwave circuit |
US5986331A (en) * | 1996-05-30 | 1999-11-16 | Philips Electronics North America Corp. | Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate |
US6023209A (en) * | 1996-07-05 | 2000-02-08 | Endgate Corporation | Coplanar microwave circuit having suppression of undesired modes |
US5821827A (en) * | 1996-12-18 | 1998-10-13 | Endgate Corporation | Coplanar oscillator circuit structures |
DK174111B1 (en) | 1998-01-26 | 2002-06-24 | Giga As | Electrical connection element and method of making one |
FR2799887A1 (en) * | 1999-10-07 | 2001-04-20 | Cit Alcatel | Impedance-matched coplanar connection device, of tape automated bonding type, is used to connect microwave multi-chip modules together or onto printed circuits |
DE20012450U1 (en) * | 2000-07-18 | 2000-11-23 | Rosenberger Hochfrequenztech | Housing for an integrated circuit |
DE10143173A1 (en) | 2000-12-04 | 2002-06-06 | Cascade Microtech Inc | Wafer probe has contact finger array with impedance matching network suitable for wide band |
US6490379B2 (en) * | 2001-05-07 | 2002-12-03 | Corning Incorporated | Electrical transmission frequency of SiOB |
GB2378045A (en) * | 2001-07-25 | 2003-01-29 | Marconi Caswell Ltd | Electrical connection with flexible coplanar transmission line |
US6812805B2 (en) * | 2001-08-16 | 2004-11-02 | Multiplex, Inc. | Differential transmission line for high bandwidth signals |
AU2003233659A1 (en) * | 2002-05-23 | 2003-12-12 | Cascade Microtech, Inc. | Probe for testing a device under test |
DE10228328A1 (en) * | 2002-06-25 | 2004-01-22 | Epcos Ag | Electronic component with a multilayer substrate and manufacturing process |
EP1573812A1 (en) * | 2002-12-10 | 2005-09-14 | Koninklijke Philips Electronics N.V. | High density package interconnect power and ground strap and method therefor |
WO2004053987A1 (en) * | 2002-12-10 | 2004-06-24 | Koninklijke Philips Electronics N.V. | High density package interconnect wire bond strip line and method therefor |
US7057404B2 (en) | 2003-05-23 | 2006-06-06 | Sharp Laboratories Of America, Inc. | Shielded probe for testing a device under test |
KR100960496B1 (en) * | 2003-10-31 | 2010-06-01 | 엘지디스플레이 주식회사 | Rubbing method of liquid crystal display device |
DE202004021093U1 (en) | 2003-12-24 | 2006-09-28 | Cascade Microtech, Inc., Beaverton | Differential probe for e.g. integrated circuit, has elongate probing units interconnected to respective active circuits that are interconnected to substrate by respective pair of flexible interconnects |
US7813145B2 (en) * | 2004-06-30 | 2010-10-12 | Endwave Corporation | Circuit structure with multifunction circuit cover |
DE202005021435U1 (en) | 2004-09-13 | 2008-02-28 | Cascade Microtech, Inc., Beaverton | Double-sided test setups |
JP3992038B2 (en) * | 2004-11-16 | 2007-10-17 | セイコーエプソン株式会社 | Electronic element mounting method, electronic device manufacturing method, circuit board, electronic device |
DE102005002707B4 (en) * | 2005-01-19 | 2007-07-26 | Infineon Technologies Ag | Method for producing electrical connections in a semiconductor device by means of coaxial microconnection elements |
US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
US7764072B2 (en) | 2006-06-12 | 2010-07-27 | Cascade Microtech, Inc. | Differential signal probing system |
US7403028B2 (en) * | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
US7723999B2 (en) | 2006-06-12 | 2010-05-25 | Cascade Microtech, Inc. | Calibration structures for differential signal probing |
US7876114B2 (en) | 2007-08-08 | 2011-01-25 | Cascade Microtech, Inc. | Differential waveguide probe |
US7940067B2 (en) * | 2008-09-08 | 2011-05-10 | Tektronix, Inc. | Probe with printed tip |
US7888957B2 (en) * | 2008-10-06 | 2011-02-15 | Cascade Microtech, Inc. | Probing apparatus with impedance optimized interface |
WO2010059247A2 (en) | 2008-11-21 | 2010-05-27 | Cascade Microtech, Inc. | Replaceable coupon for a probing apparatus |
CN101794929B (en) * | 2009-12-26 | 2013-01-02 | 华为技术有限公司 | Device for improving transmission bandwidth |
EP2806512A4 (en) * | 2012-01-19 | 2015-10-07 | Asus Technology Suzhou Co Ltd | Connector and electronic system using the same |
US9557791B2 (en) | 2012-02-29 | 2017-01-31 | Asus Technology (Suzhou) Co., Ltd. | Computer device and method for converting working mode of universal serial bus connector of the computer device |
CN105785299A (en) * | 2014-12-24 | 2016-07-20 | 北京无线电计量测试研究所 | Coplanar waveguide reflection amplitude etalon of on-chip measurement system and design method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA557003A (en) * | 1958-05-06 | D. Grieg Donald | Microwave wire and cable | |
US3398232A (en) * | 1965-10-19 | 1968-08-20 | Amp Inc | Circuit board with interconnected signal conductors and interconnected shielding conductors |
US3560893A (en) * | 1968-12-27 | 1971-02-02 | Rca Corp | Surface strip transmission line and microwave devices using same |
JPS4947713B1 (en) * | 1970-04-27 | 1974-12-17 | ||
US3848198A (en) * | 1972-12-14 | 1974-11-12 | Rca Corp | Microwave transmission line and devices using multiple coplanar conductors |
US3975690A (en) * | 1974-10-07 | 1976-08-17 | Communicatons Satellite Corporation (Comsat) | Planar transmission line comprising a material having negative differential conductivity |
US4386324A (en) * | 1980-12-05 | 1983-05-31 | Hughes Aircraft Company | Planar chip-level power combiner |
EP0070104A3 (en) * | 1981-07-10 | 1985-05-15 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Circuit matching elements |
-
1985
- 1985-03-07 US US06/709,463 patent/US4600907A/en not_active Expired - Lifetime
-
1986
- 1986-02-19 EP EP86301140A patent/EP0195520B1/en not_active Expired
- 1986-02-19 DE DE8686301140T patent/DE3666311D1/en not_active Expired
- 1986-02-26 CA CA000502759A patent/CA1240371A/en not_active Expired
- 1986-03-07 JP JP61050237A patent/JPS61222246A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0195520B1 (en) | 1989-10-11 |
DE3666311D1 (en) | 1989-11-16 |
EP0195520A1 (en) | 1986-09-24 |
JPH0321089B2 (en) | 1991-03-20 |
US4600907A (en) | 1986-07-15 |
JPS61222246A (en) | 1986-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1240371A (en) | Coplanar microstrap waveguide | |
EP0563969B1 (en) | High frequency signal transmission tape | |
CA1239483A (en) | Bond wire transmission line | |
EP0600638B1 (en) | Method and apparatus for the interconnection of radio frequency (RF) monolithic microwave integrated circuits | |
US4933741A (en) | Multifunction ground plane | |
US20200168525A1 (en) | Integrated circuit chip packaging | |
EP0148083A2 (en) | Ultra-high speed semiconductor integrated circuit device having a multi-layered wiring board | |
KR970702579A (en) | TAPE APPLICATION PLATFORM AND PROCESSES THEREFOR | |
US5852391A (en) | Microwave/millimeter-wave functional module package | |
JPH07142669A (en) | Molded semiconductor device | |
JPH0766949B2 (en) | IC package | |
JPH04127446A (en) | Semiconductor device | |
US4736273A (en) | Power semiconductor device for surface mounting | |
US6204555B1 (en) | Microwave-frequency hybrid integrated circuit | |
US6998292B2 (en) | Apparatus and method for inter-chip or chip-to-substrate connection with a sub-carrier | |
GB2189084A (en) | Integrated circuit packaging | |
JPH10327004A (en) | Circuit module with coaxial connector | |
US4851793A (en) | Waffleline - configured transmission link | |
JPH0936617A (en) | High frequency module | |
JP2661570B2 (en) | High frequency device | |
JPH04276905A (en) | Manufacture of strip line | |
JPH0750362A (en) | Semiconductor device | |
JP2000022042A (en) | Package for high-frequency | |
JPH0548306A (en) | Very high speed mount circuit | |
JPH08186198A (en) | Microwave package which can be surface-mounted |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |