CA1264567A - Integrated optics spectrum analyzer - Google Patents
Integrated optics spectrum analyzerInfo
- Publication number
- CA1264567A CA1264567A CA000507667A CA507667A CA1264567A CA 1264567 A CA1264567 A CA 1264567A CA 000507667 A CA000507667 A CA 000507667A CA 507667 A CA507667 A CA 507667A CA 1264567 A CA1264567 A CA 1264567A
- Authority
- CA
- Canada
- Prior art keywords
- diffused
- waveguide
- section
- substrate
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/33—Acousto-optical deflection devices
- G02F1/335—Acousto-optical deflection devices having an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
Abstract
ABSTRACT OF THE DISCLOSURE
An optical waveguide comprises an out-diffused optical waveguide section, an in-diffused optical waveguide section, and a narrow transition region intimately connecting the out-diffused waveguide section and the in-diffused waveguide section. This waveguide structure can decrease the level of in-plane scattering caused by surface irregularities, reduce the difficulty of coupling light into and out of the waveguide, the structure can be made to perform as a transverse magnetic mode filter, and increase the intensity of light focussed into the guide beyond the limits imposed by the optical damage resistance of a strictly in-diffused waveguide.
An optical waveguide comprises an out-diffused optical waveguide section, an in-diffused optical waveguide section, and a narrow transition region intimately connecting the out-diffused waveguide section and the in-diffused waveguide section. This waveguide structure can decrease the level of in-plane scattering caused by surface irregularities, reduce the difficulty of coupling light into and out of the waveguide, the structure can be made to perform as a transverse magnetic mode filter, and increase the intensity of light focussed into the guide beyond the limits imposed by the optical damage resistance of a strictly in-diffused waveguide.
Description
-:L-The present invention relates, in general, to an improved optical wav~guide and method of making same and, in particular, to an i~proved Integrated Optical Spectrum Analyzer.
BACKG~OUND OF THE INVENTION
__ _____ ___ Optical waveguides, formed by the thermal in-dif~usion of titanium into the surface of Lithium Niobate (LiNbO3) crystals, have become the basis for numerous advanced optical guided wave signal processing devices such as the integrated optics spectrum analyzer ~IOSA~.
Titanium in-diffused waveguides are capable of propagating optical waves with little attenuation in a region very close (within 3 ~m) to the crystal surface where the optical beam can interact efficiently with high frequency surface acoustic waves ~5A~ through the acousto-optic effect or with electric fields ~enerated by metal surface electrodes vla the electro-optic ef~ect. However, several problems attend the close proximity of the guided wave to the ~urface of the cry~tal.
Surface roughness, micro-scratches and contaminatlon can increase the amount of in-plane ~cattering and thereby reduce the dynamic range of the signal processor. Coupling light efficlently into and out of the waveguide is also more difficult to achieve when the wav~yulde is tightly confined to the crystal surface. Laser diodes, which are often the light sources for optical guided wave signal processors, have highly divergent beams which neces~itate extremely accurate and close positioning between the active region ~4~7 of the diode and the well polished edge of the waveguide. Conver~ely, guided beams exiting the waveguide diverge quickly and, therefore, preci~e butt coupllng of a detector to the waveguide edge i5 e~ential in order to capture the maximum amount of light.
Titanium in-diffu~ed waveguides ln LiNbO3 can propagate transver Ply electric (TE) and transver~ely magnetic ~TM) polarized modes simultaneously. The ~imultaneous presence of two types of mode~ lead~ to the deterioration o~ the performance of geodesic lenses since the lenses will exhibit a different focal length ~or each mode type. Furthermore, geod~sic len~es, needed either ~or collimatin~ or focussing, operate with light r~ys at large angle~ (65-90) with respect to the optical axis of LiNbO3. In thi~ region, both TE and TM
mode~ are leaky modes with TE mode3 being dominant. It is desirable to eliminate TM modes in order to suppress the occurrence of double focussing in the detector region and reduce the nolse floor, and, thus, improve the dynamic range of the device.
Finally, these waveguides are susceptible to optical damage at high optical power densities e~pecially for vi~ible light wavelengths. Thi3 usually occurs at the input coupling region wher~ the light beam oten has its smallest cross-section. Consequently, the maximum amount of optical power that can be coupled into the guide i5 restricted to the damage threshold.
The problem of in-plane ~cattering cau~ed by surface irregularities in the planar in-diffused waveguides ha~ not yet been solved in a clear and consi3tent mann*r. However, careful control of several ~3-factor~ ln the waveguide preparatlon ha~ been shown to reduce the level of ~¢attering. The~e ~actors include:
the thickne~ of the pre-dif~usion titanium layer on the crystal, the duration and temperature of the diffusion and the in~lux of argon and oxygen gase~ during the diffusion. Careful sur~ac~ poli~hing may al~o aid in lowering ~cattering but this is not always successful or consistent.
A variet~ of techni~ueR have bPen developed ~or coupling light into the .in-diffused waveguide~. Some of the more efflcient techniques include: the direct butt-coupling o~ a laser diode to a pol.ished waveguide edge and the u~e of lenses to focus the llght onto the polished edge. Both methods require very precise po~itioning of the optical elements relative to the waveguide edge.
Elimination of TM polarized waveguide modes can be accomplished with a tapered tran~itional waveguide ~ituated between a high refractive index and a low refractive index ~aveguide while ensuring the ~uided beam i~ incident at the transition junction at ~he Brewster angle. Methods ~or removing TM modes propagated in the geodesic lenses have not as yet been published.
The problem oP optical damage in LiNbO3 in-di~fu~ed waveguides has not been solved for visible light wavelengths, although dopln~ the cry~tal with MgO during manuP~cture or adding water vapour to the argon gas during in-di~fusion have been reported to help.
The proposed ~olutions to the planar scattering problem are neither definitive nor necessarily con~istent when implemented because o~ the many 5~77 varlables ~nvolv~d in wav~gulde ~abrication proce~se~
while solutlon~ to the non~planar scattering have yet to be put forward.
The coupling problem has not been solved in an optimal sense. Althou~h ef~icient edge coupling of li~ht to the wavegu.ide can be attained, it ls at the C08t 0~ ~reater complexity and preci~ion slnc~ the available coupling reglon is only 3 ~m thick. Direct coupling of a laser diode or photodetector results in a compact device but it is a difficult task in practice.
On the other hand, while the use of focussing optics makes the positio.ning re~uirements less stringent, they increase the size and bulk of the si~nal processor.
Removal or filtering of TM modes by means of transitional waveguides i5 complicated and impractical in practice. Furthermore, imperfect waveguide matching may cause unacceptably high levels of scattering loss.
Solutions to the problem with TM modes in geodesic l~nse~ have not yet been advanced.
Techniques for lncreasing, in the visible li~ht range, the optical dama~e resistance in titanium in-diffu~ed waveguides have been ~ucce~sful but the resistance is stlll lower than that of out-diffused wavegu~des in LiNbO~.
In ~eneral, if all the prevlously de~cribed so'lutions were incorporated into a single ~uided wave ~i~nal processing device, the complexity and cost o~
such a device would likely increase and the productlon yield ~all and, in any case, there is no assurance ~hat such solutions would function in concert and i~prove the performance of the device. Therefore, it can be ~tated that, at present, there is no single technique or system ~64~5~'7 which will alleviate aLl the aforementioned problems in a simple and reproducible fashion.
SUMMARY OF THE INVENTION
The present invention prGvides an improved optical waveguide which is capable of decreasing the level of in-plane scattering caused by surface irregularities, reducing the difficulty of coupling light into and out of the waveguide, performing as a TM mode filter and increasing the intensity of light which can be focused into the guide beyond the limits imposed by the optical damage resistance of a strictly in-diffused waveguide.
Generally, the present invention provides an optical waveguide comprising a substrate, an out-diffused optical waveguide section on a first surface of the substrate, an in-diffused optical waveguide section on a second surface of the substrate, the depth of the out-diffused section being greater than the depth of the in-diffused sec~ion by about one order of magnitude, and a narrow transition region intimately connecting the out-diffused waveguide section and the in-diffused waveguide section, the width of the transition region along its optical axis being much greater than the wavelength of the optical signal passing through the waveguide.
The present invention ~`urther provides an optical guided wave signal processing device comprising a substrate, a waveguide in a surEace of the substrate, the waveguide having an input edge at one end of the substrate and an output edge at another end of the substrate remote from and opposed to the first edge, an input out-diffused waveguide section extending from the input edge towards the output edge, an output out-diffused waveguide section extending from the output edge towards the input edge, an in-diffused waveguide section extending transversely of the substrate and intimately connected to each the input and output waveguide sections by means of a narrow transition , 5~
reg.io~, the ~epths oE the input out~diffused waveyuide secki.on and the output out-diffused section beiny yreater than the dep~h of the in-diffused waveguide section by an order of magnitude, and the transition region having a width alony its optical axis which is greater than the wavelength of the optical siynal passing through the waveguide, a collimating lens in the in-diffused section adjacent the input section, a Fourier lens longitudinally spaced from the collimating lens in the in-dif~used section adjacent the output section, a surface acoustic wave signal means in the in-diffused section intermediate the lenses, a light source coupled to the input edge in light transmitting relation thereto, and detector means coupled to the output edge in light transmitting relation thereto.
The present invention also provides a simple and reproducible process of simultaneously forming an in-diffused waveguide section and an out-diffused waveguide section in the surface of a substrate. The method comprises the steps of (a) depositing a layer of a metal on a portion of the surface of the substrate while masking the balance of the surface, (b) heating the sur~ace at a predetermined temperature below the Curie temperature of the substrate for a first predetermined time interval and simultaneously exposing the substrate to an Argon gas and water vapour environment to form a metal in-diffused waveguide section on said portion of the surface, (c) heating the surface at a predetermined temperature below the Curie temperature of the substrate for a second predetermined time interval and simultaneously exposing the substrate to a dry Argon gas env.ironment to form out-diffused waveguide sections on the balance of the surface, and (d) exposing the substrate to an oxygen environment while permitting the substrate to cool to ambient temperature thereby forming a transition region intimately connecting the out-diffused waveguide and the in-diffused waveguide section, the width of the transition 5~
-6cl-region alony its optical axis being much yreater than the wavelength of the optical signal passing throuyh the waveguide and the depth of the out~diffused section being greater than the depth of the in-diffused section by about one order of magnitude.
~q~4s~7 BRI~' DESCRIPTION 0~' T E DRAWINGS
These and other ~eatures of the invention will becomQ more apparent from the following description in which reference is made to the appended drawings, wherein:
FIGUR~ a diagrammatic, perspective view of an integrated optic spectrum analyzer constructed in accordance with the present invention; and FI~URE 2 is a diagrammatic, longitudinal, ~ide elevational view through the substrate in which a waveguide cons~ructed in accordance with ~he present invention is formed.
DETAILE:D DESCRIPTION O~ THE INVENTION
The pre~ent invention will now be described with reference to an inte~rated optics spectrum analyzer.
However, it is to be understood at the outset that the invention ha~ wide application in other areas such as integrated optic circuits, both single and multi-mode, flbre coupled lntegrated optics substrates, both fibre and inte~rated optics interferometers, channel waveguid~s in Titanium in-diffused LiNbO3 technolo~y.
Accordingly, tha present inventlon is not to be considered a6 being limited to the speci~ic application of an integrated optic~ ~pectrum analyzer.
With reference to FI~UR~ 1, there is illustrated an integrated optical spectrum analyzer 10, compri~ing a ~ubstrate 12, ~ormed of Lithium Niobate (LiNbO~), having a sur~ace 14 in which the waveguide 16 of .the pre~ent invention i5 formed. The waveguide i5 formed with an input edge 18 at one end of the ~ub~trate and an output edge 20 at the other end of the substrate remote from . A ,.
and opposed tQ the first edge. A light ~ource 22, ~uch a~ a laser diode, is coupled to the input edge in l~ght transmitting relation thereto while a detector means 24 is coupled to the output edge in light transmitting r lation thereto both ln well known fashion. The wavegulde further includes a collimating lens 26 and a Fourier lens 28 longitudinally spaced from the collimating len3 tnwarAs the output ed~e. A surface activated wave (SAW~ mean~ 30 i8 secured to the waveguide, in transverse relatlon thereto, between the collimating and Fourier lenses in well known fashion.
As is also well known, an electrical signal to be analyzed i5 input at 32 and mixed with the output of a local o~cillator 34 in a mixer 36. The resulting signal ls amplified by an amplifier 38 and applied to SAW means 30 which directs the signal txansversely of the longitudinal or optical axis of the waveguide.
With particularly reference to ~I~URE 2 of the drawings, waveguide 16 will be seen to include an input out-diffused waveguide section 40 extending from input edge 18 toward~ output edge 20, an output out-diffu~ed waveguide section 42 extending from output. edge ~0 towards input edge 18, and a titanium in-diffu~ed SAW
propagation waveguide section 44 extendin~ transver~ely of the ~ubstrate and intima~ely connec~ed to eaah of the input and output waveguide sections by means of narrow transition regions 46 and 48. Collimating lens 26 and Four1er lens 28 are disposed in the in-diffused waveguide section 40. The depth of each out-di~fu~ed s~ction is madQ greater than the d~pth of said in-diffused ~ection by about one order oP magnituda.
, ....
i4~
g It will be understood by tho~e s~illed in the art that while the transitlon region~ are descr~bed a~ being narrow, the width, along the longitudinal or optical a~is ~f ~aid waveguide, of the transition regions must be much greater than the wavelength of the optical ~ignal pa~sed throu~h the wave~uide in order to avoid reflection oP the si~nal in the traneition regions.
The above described waveguide structure po~es~e~
several favourable attributes. It can decrea~e the level of in-plane scattering cau~ed by surface irregularities in both planar and non-planar surfaces, reduce th~ dif~iculty o~ coupling light into and out o~
the waveguide, ~unction as a TM mode ~ilter, and increase the inten~ity of light ~ocussed in-to the gulde beyond the li~its imposed by the optical damage r~sistance o~ a strictly in-dif~used waveguide. In addition, no visible scattering occurs at the transition region. These attributes may be explained in part by the i~dividual characteristic~ of the out-diffused and in-diffu~ed waveguide section~.
A low loss out-di~fu~ed wav~guide i9 created by heating a LiNbO3 crystal -for a period ran~ing from a few minutes to several hour~ at a temperature near lOOO~C
(but less than the Curie temperature of the crystal3.
Heatin~ the cry~tal causes the Lithium to diffu~e out and evaporate away leaving a re~ion at the Rurface which exhibit~ an extraordinary refractive index of refraction sllghtly higher in value than the bulk crystal index of refraction. The increa~e in the index allows only T~
polarized modes to propagate ~ince the ordinary rePractive index of the crystal remains unaffected by the dlf fusion proce~s.
, ....
~6~7 Th~!? rasulting waveguide penetrates the cry~tal ~;ub~trate much further than in-dlffused guides:
extending 10 or 20 ~m or more into the sur~ace of the crystal. Con~equently, most of the energy in the propagating modes lies further from the surface o~ the crystal than the energy in the in-diffused waveguide modc~.
The out-diffused waveguide i~ also inherently more r~sistant to optical damage than in-diffused guides for reasons that are not completely understood.
These characteristic~ may be exploited in the several way~. Because of the ~eeper mode penetration, the modes are le~s susceptible to surface imperfections and hence the level of in-plane sca~terin~ is reduced.
Further, no surface polishing is required to remove diffusion ~y-product~ which may appear in the in-diff U5 ion process.
The deeper waveguides also decreases the coupling difficulty since the physical constraints imposed by couplin~ to a 20 ~m thick waveguide are ~ar less string0nt than those imposed by a 2 ~m thick wave~uide.
This is a qi~ni~icant advanta~e when direct butt-coupling is used ~or input and output coupllng.
The relatively large waveyuide thickne~s alleviates the a~ial and trar~verse la~er diode positioning di~icultie~ as well as provides a low diver~ence beam when light exits the waveguide. Furthermore, coupliny to optical ~lbers could be improved since the fiber core diameter and planar waveguide thicknes~ are more closely matched in size. The inability of out-diffused waveguldeq to carry TM modes allows the wav~guide struc~ure to act aæ a mode ~ilter ~or beams pas~ing from .
the in-diffu~ed waveguide 3ection to the out-di~fused wavegulde ~ection.
Notwith~tanding the aforedescribed advantages, out-dif~used waveguides are not suitable media for acousto-opti~ Bragg interaction because the deep optical mode penetration offers a poor overlap with hi~h frequency surface acoustic waves. The poor overlap results in inefficient Bragg deflection at frequencies nearing 1 GHz and beyond. On the other hand, in-diffu~ed waveguides are ideally suited to this ~unction but suffer from the disadvantages ~entioned earlier. Accordingly, the waveguide structure of the present invention Gombines both types of guides and provides the option of placing the type of waveguide on the crystal where it is the most advantageou~ to the d~vice as a whole. For example, as described earlier with respect to an ~OSA, the edge~ employ out-diffu~ed waveguides whereas the SAW propagation section and ~eodesic lenses employ an in-diffused guide.
The fabrication of the waveguide of the pr~sent invention is simple, straightforward and readily reproducibl~. A non-contact mask is used to deposit a layer of titanium on one side of the cry~tal with a gradcd thickne~s transltion re~ion of approximately 1 mm in width. The cryetal i~ then placed in a tube ~urnace where it is heated to 1000C whlle argon gas i8 bubbled through water and pas~ed through the furnace for a suitable time interval, including the heating up period and up to the first few hours of the diffusion period, at 1000C. Titanium ln-diffusion is well known in the art and, accordingly, the details thereof are not described in detail herein. This forms the in-dif~used , -.12-waveguide on the titanium covered ~idc o~ thc crystal while preventing any out-dl~fu6ed region from forming elsewhere.
In th~ next step, the wa~er bu~bler is by-passed and only dry argon is used during a time interval, which may ran~e from several minutes to several hours depending upon the des~red depth o~ the out-diffu~ed s~ction, ~o that the out-diffused waveguide can be made on the part of the crystal ~urface which was not covered inltially with the titaniu~ ~ilm. Following this, the argon is replaced by oxygen and the crystal i8 permitted to cool to room temperature. This procedur~ results in clear waveguides with no visible transition regions.
BACKG~OUND OF THE INVENTION
__ _____ ___ Optical waveguides, formed by the thermal in-dif~usion of titanium into the surface of Lithium Niobate (LiNbO3) crystals, have become the basis for numerous advanced optical guided wave signal processing devices such as the integrated optics spectrum analyzer ~IOSA~.
Titanium in-diffused waveguides are capable of propagating optical waves with little attenuation in a region very close (within 3 ~m) to the crystal surface where the optical beam can interact efficiently with high frequency surface acoustic waves ~5A~ through the acousto-optic effect or with electric fields ~enerated by metal surface electrodes vla the electro-optic ef~ect. However, several problems attend the close proximity of the guided wave to the ~urface of the cry~tal.
Surface roughness, micro-scratches and contaminatlon can increase the amount of in-plane ~cattering and thereby reduce the dynamic range of the signal processor. Coupling light efficlently into and out of the waveguide is also more difficult to achieve when the wav~yulde is tightly confined to the crystal surface. Laser diodes, which are often the light sources for optical guided wave signal processors, have highly divergent beams which neces~itate extremely accurate and close positioning between the active region ~4~7 of the diode and the well polished edge of the waveguide. Conver~ely, guided beams exiting the waveguide diverge quickly and, therefore, preci~e butt coupllng of a detector to the waveguide edge i5 e~ential in order to capture the maximum amount of light.
Titanium in-diffu~ed waveguides ln LiNbO3 can propagate transver Ply electric (TE) and transver~ely magnetic ~TM) polarized modes simultaneously. The ~imultaneous presence of two types of mode~ lead~ to the deterioration o~ the performance of geodesic lenses since the lenses will exhibit a different focal length ~or each mode type. Furthermore, geod~sic len~es, needed either ~or collimatin~ or focussing, operate with light r~ys at large angle~ (65-90) with respect to the optical axis of LiNbO3. In thi~ region, both TE and TM
mode~ are leaky modes with TE mode3 being dominant. It is desirable to eliminate TM modes in order to suppress the occurrence of double focussing in the detector region and reduce the nolse floor, and, thus, improve the dynamic range of the device.
Finally, these waveguides are susceptible to optical damage at high optical power densities e~pecially for vi~ible light wavelengths. Thi3 usually occurs at the input coupling region wher~ the light beam oten has its smallest cross-section. Consequently, the maximum amount of optical power that can be coupled into the guide i5 restricted to the damage threshold.
The problem of in-plane ~cattering cau~ed by surface irregularities in the planar in-diffused waveguides ha~ not yet been solved in a clear and consi3tent mann*r. However, careful control of several ~3-factor~ ln the waveguide preparatlon ha~ been shown to reduce the level of ~¢attering. The~e ~actors include:
the thickne~ of the pre-dif~usion titanium layer on the crystal, the duration and temperature of the diffusion and the in~lux of argon and oxygen gase~ during the diffusion. Careful sur~ac~ poli~hing may al~o aid in lowering ~cattering but this is not always successful or consistent.
A variet~ of techni~ueR have bPen developed ~or coupling light into the .in-diffused waveguide~. Some of the more efflcient techniques include: the direct butt-coupling o~ a laser diode to a pol.ished waveguide edge and the u~e of lenses to focus the llght onto the polished edge. Both methods require very precise po~itioning of the optical elements relative to the waveguide edge.
Elimination of TM polarized waveguide modes can be accomplished with a tapered tran~itional waveguide ~ituated between a high refractive index and a low refractive index ~aveguide while ensuring the ~uided beam i~ incident at the transition junction at ~he Brewster angle. Methods ~or removing TM modes propagated in the geodesic lenses have not as yet been published.
The problem oP optical damage in LiNbO3 in-di~fu~ed waveguides has not been solved for visible light wavelengths, although dopln~ the cry~tal with MgO during manuP~cture or adding water vapour to the argon gas during in-di~fusion have been reported to help.
The proposed ~olutions to the planar scattering problem are neither definitive nor necessarily con~istent when implemented because o~ the many 5~77 varlables ~nvolv~d in wav~gulde ~abrication proce~se~
while solutlon~ to the non~planar scattering have yet to be put forward.
The coupling problem has not been solved in an optimal sense. Althou~h ef~icient edge coupling of li~ht to the wavegu.ide can be attained, it ls at the C08t 0~ ~reater complexity and preci~ion slnc~ the available coupling reglon is only 3 ~m thick. Direct coupling of a laser diode or photodetector results in a compact device but it is a difficult task in practice.
On the other hand, while the use of focussing optics makes the positio.ning re~uirements less stringent, they increase the size and bulk of the si~nal processor.
Removal or filtering of TM modes by means of transitional waveguides i5 complicated and impractical in practice. Furthermore, imperfect waveguide matching may cause unacceptably high levels of scattering loss.
Solutions to the problem with TM modes in geodesic l~nse~ have not yet been advanced.
Techniques for lncreasing, in the visible li~ht range, the optical dama~e resistance in titanium in-diffu~ed waveguides have been ~ucce~sful but the resistance is stlll lower than that of out-diffused wavegu~des in LiNbO~.
In ~eneral, if all the prevlously de~cribed so'lutions were incorporated into a single ~uided wave ~i~nal processing device, the complexity and cost o~
such a device would likely increase and the productlon yield ~all and, in any case, there is no assurance ~hat such solutions would function in concert and i~prove the performance of the device. Therefore, it can be ~tated that, at present, there is no single technique or system ~64~5~'7 which will alleviate aLl the aforementioned problems in a simple and reproducible fashion.
SUMMARY OF THE INVENTION
The present invention prGvides an improved optical waveguide which is capable of decreasing the level of in-plane scattering caused by surface irregularities, reducing the difficulty of coupling light into and out of the waveguide, performing as a TM mode filter and increasing the intensity of light which can be focused into the guide beyond the limits imposed by the optical damage resistance of a strictly in-diffused waveguide.
Generally, the present invention provides an optical waveguide comprising a substrate, an out-diffused optical waveguide section on a first surface of the substrate, an in-diffused optical waveguide section on a second surface of the substrate, the depth of the out-diffused section being greater than the depth of the in-diffused sec~ion by about one order of magnitude, and a narrow transition region intimately connecting the out-diffused waveguide section and the in-diffused waveguide section, the width of the transition region along its optical axis being much greater than the wavelength of the optical signal passing through the waveguide.
The present invention ~`urther provides an optical guided wave signal processing device comprising a substrate, a waveguide in a surEace of the substrate, the waveguide having an input edge at one end of the substrate and an output edge at another end of the substrate remote from and opposed to the first edge, an input out-diffused waveguide section extending from the input edge towards the output edge, an output out-diffused waveguide section extending from the output edge towards the input edge, an in-diffused waveguide section extending transversely of the substrate and intimately connected to each the input and output waveguide sections by means of a narrow transition , 5~
reg.io~, the ~epths oE the input out~diffused waveyuide secki.on and the output out-diffused section beiny yreater than the dep~h of the in-diffused waveguide section by an order of magnitude, and the transition region having a width alony its optical axis which is greater than the wavelength of the optical siynal passing through the waveguide, a collimating lens in the in-diffused section adjacent the input section, a Fourier lens longitudinally spaced from the collimating lens in the in-dif~used section adjacent the output section, a surface acoustic wave signal means in the in-diffused section intermediate the lenses, a light source coupled to the input edge in light transmitting relation thereto, and detector means coupled to the output edge in light transmitting relation thereto.
The present invention also provides a simple and reproducible process of simultaneously forming an in-diffused waveguide section and an out-diffused waveguide section in the surface of a substrate. The method comprises the steps of (a) depositing a layer of a metal on a portion of the surface of the substrate while masking the balance of the surface, (b) heating the sur~ace at a predetermined temperature below the Curie temperature of the substrate for a first predetermined time interval and simultaneously exposing the substrate to an Argon gas and water vapour environment to form a metal in-diffused waveguide section on said portion of the surface, (c) heating the surface at a predetermined temperature below the Curie temperature of the substrate for a second predetermined time interval and simultaneously exposing the substrate to a dry Argon gas env.ironment to form out-diffused waveguide sections on the balance of the surface, and (d) exposing the substrate to an oxygen environment while permitting the substrate to cool to ambient temperature thereby forming a transition region intimately connecting the out-diffused waveguide and the in-diffused waveguide section, the width of the transition 5~
-6cl-region alony its optical axis being much yreater than the wavelength of the optical signal passing throuyh the waveguide and the depth of the out~diffused section being greater than the depth of the in-diffused section by about one order of magnitude.
~q~4s~7 BRI~' DESCRIPTION 0~' T E DRAWINGS
These and other ~eatures of the invention will becomQ more apparent from the following description in which reference is made to the appended drawings, wherein:
FIGUR~ a diagrammatic, perspective view of an integrated optic spectrum analyzer constructed in accordance with the present invention; and FI~URE 2 is a diagrammatic, longitudinal, ~ide elevational view through the substrate in which a waveguide cons~ructed in accordance with ~he present invention is formed.
DETAILE:D DESCRIPTION O~ THE INVENTION
The pre~ent invention will now be described with reference to an inte~rated optics spectrum analyzer.
However, it is to be understood at the outset that the invention ha~ wide application in other areas such as integrated optic circuits, both single and multi-mode, flbre coupled lntegrated optics substrates, both fibre and inte~rated optics interferometers, channel waveguid~s in Titanium in-diffused LiNbO3 technolo~y.
Accordingly, tha present inventlon is not to be considered a6 being limited to the speci~ic application of an integrated optic~ ~pectrum analyzer.
With reference to FI~UR~ 1, there is illustrated an integrated optical spectrum analyzer 10, compri~ing a ~ubstrate 12, ~ormed of Lithium Niobate (LiNbO~), having a sur~ace 14 in which the waveguide 16 of .the pre~ent invention i5 formed. The waveguide i5 formed with an input edge 18 at one end of the ~ub~trate and an output edge 20 at the other end of the substrate remote from . A ,.
and opposed tQ the first edge. A light ~ource 22, ~uch a~ a laser diode, is coupled to the input edge in l~ght transmitting relation thereto while a detector means 24 is coupled to the output edge in light transmitting r lation thereto both ln well known fashion. The wavegulde further includes a collimating lens 26 and a Fourier lens 28 longitudinally spaced from the collimating len3 tnwarAs the output ed~e. A surface activated wave (SAW~ mean~ 30 i8 secured to the waveguide, in transverse relatlon thereto, between the collimating and Fourier lenses in well known fashion.
As is also well known, an electrical signal to be analyzed i5 input at 32 and mixed with the output of a local o~cillator 34 in a mixer 36. The resulting signal ls amplified by an amplifier 38 and applied to SAW means 30 which directs the signal txansversely of the longitudinal or optical axis of the waveguide.
With particularly reference to ~I~URE 2 of the drawings, waveguide 16 will be seen to include an input out-diffused waveguide section 40 extending from input edge 18 toward~ output edge 20, an output out-diffu~ed waveguide section 42 extending from output. edge ~0 towards input edge 18, and a titanium in-diffu~ed SAW
propagation waveguide section 44 extendin~ transver~ely of the ~ubstrate and intima~ely connec~ed to eaah of the input and output waveguide sections by means of narrow transition regions 46 and 48. Collimating lens 26 and Four1er lens 28 are disposed in the in-diffused waveguide section 40. The depth of each out-di~fu~ed s~ction is madQ greater than the d~pth of said in-diffused ~ection by about one order oP magnituda.
, ....
i4~
g It will be understood by tho~e s~illed in the art that while the transitlon region~ are descr~bed a~ being narrow, the width, along the longitudinal or optical a~is ~f ~aid waveguide, of the transition regions must be much greater than the wavelength of the optical ~ignal pa~sed throu~h the wave~uide in order to avoid reflection oP the si~nal in the traneition regions.
The above described waveguide structure po~es~e~
several favourable attributes. It can decrea~e the level of in-plane scattering cau~ed by surface irregularities in both planar and non-planar surfaces, reduce th~ dif~iculty o~ coupling light into and out o~
the waveguide, ~unction as a TM mode ~ilter, and increase the inten~ity of light ~ocussed in-to the gulde beyond the li~its imposed by the optical damage r~sistance o~ a strictly in-dif~used waveguide. In addition, no visible scattering occurs at the transition region. These attributes may be explained in part by the i~dividual characteristic~ of the out-diffused and in-diffu~ed waveguide section~.
A low loss out-di~fu~ed wav~guide i9 created by heating a LiNbO3 crystal -for a period ran~ing from a few minutes to several hour~ at a temperature near lOOO~C
(but less than the Curie temperature of the crystal3.
Heatin~ the cry~tal causes the Lithium to diffu~e out and evaporate away leaving a re~ion at the Rurface which exhibit~ an extraordinary refractive index of refraction sllghtly higher in value than the bulk crystal index of refraction. The increa~e in the index allows only T~
polarized modes to propagate ~ince the ordinary rePractive index of the crystal remains unaffected by the dlf fusion proce~s.
, ....
~6~7 Th~!? rasulting waveguide penetrates the cry~tal ~;ub~trate much further than in-dlffused guides:
extending 10 or 20 ~m or more into the sur~ace of the crystal. Con~equently, most of the energy in the propagating modes lies further from the surface o~ the crystal than the energy in the in-diffused waveguide modc~.
The out-diffused waveguide i~ also inherently more r~sistant to optical damage than in-diffused guides for reasons that are not completely understood.
These characteristic~ may be exploited in the several way~. Because of the ~eeper mode penetration, the modes are le~s susceptible to surface imperfections and hence the level of in-plane sca~terin~ is reduced.
Further, no surface polishing is required to remove diffusion ~y-product~ which may appear in the in-diff U5 ion process.
The deeper waveguides also decreases the coupling difficulty since the physical constraints imposed by couplin~ to a 20 ~m thick waveguide are ~ar less string0nt than those imposed by a 2 ~m thick wave~uide.
This is a qi~ni~icant advanta~e when direct butt-coupling is used ~or input and output coupllng.
The relatively large waveyuide thickne~s alleviates the a~ial and trar~verse la~er diode positioning di~icultie~ as well as provides a low diver~ence beam when light exits the waveguide. Furthermore, coupliny to optical ~lbers could be improved since the fiber core diameter and planar waveguide thicknes~ are more closely matched in size. The inability of out-diffused waveguldeq to carry TM modes allows the wav~guide struc~ure to act aæ a mode ~ilter ~or beams pas~ing from .
the in-diffu~ed waveguide 3ection to the out-di~fused wavegulde ~ection.
Notwith~tanding the aforedescribed advantages, out-dif~used waveguides are not suitable media for acousto-opti~ Bragg interaction because the deep optical mode penetration offers a poor overlap with hi~h frequency surface acoustic waves. The poor overlap results in inefficient Bragg deflection at frequencies nearing 1 GHz and beyond. On the other hand, in-diffu~ed waveguides are ideally suited to this ~unction but suffer from the disadvantages ~entioned earlier. Accordingly, the waveguide structure of the present invention Gombines both types of guides and provides the option of placing the type of waveguide on the crystal where it is the most advantageou~ to the d~vice as a whole. For example, as described earlier with respect to an ~OSA, the edge~ employ out-diffu~ed waveguides whereas the SAW propagation section and ~eodesic lenses employ an in-diffused guide.
The fabrication of the waveguide of the pr~sent invention is simple, straightforward and readily reproducibl~. A non-contact mask is used to deposit a layer of titanium on one side of the cry~tal with a gradcd thickne~s transltion re~ion of approximately 1 mm in width. The cryetal i~ then placed in a tube ~urnace where it is heated to 1000C whlle argon gas i8 bubbled through water and pas~ed through the furnace for a suitable time interval, including the heating up period and up to the first few hours of the diffusion period, at 1000C. Titanium ln-diffusion is well known in the art and, accordingly, the details thereof are not described in detail herein. This forms the in-dif~used , -.12-waveguide on the titanium covered ~idc o~ thc crystal while preventing any out-dl~fu6ed region from forming elsewhere.
In th~ next step, the wa~er bu~bler is by-passed and only dry argon is used during a time interval, which may ran~e from several minutes to several hours depending upon the des~red depth o~ the out-diffu~ed s~ction, ~o that the out-diffused waveguide can be made on the part of the crystal ~urface which was not covered inltially with the titaniu~ ~ilm. Following this, the argon is replaced by oxygen and the crystal i8 permitted to cool to room temperature. This procedur~ results in clear waveguides with no visible transition regions.
Claims (16)
PROPERTY OF PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. An optical waveguide comprising:
a substrate;
an out-diffused optical waveguide section on a first surface of said substrate;
an in-diffused optical waveguide section on a second surface of said substrate, the depth of said out-diffused section being greater than the depth of said in-diffused section by about one order of magnitude;
and a narrow transition region intimately connecting said out-diffused waveguide section and said in-diffused waveguide section, the width of said transition region along its optical axis being much greater than the wavelength of the optical signal passing through said waveguide.
a substrate;
an out-diffused optical waveguide section on a first surface of said substrate;
an in-diffused optical waveguide section on a second surface of said substrate, the depth of said out-diffused section being greater than the depth of said in-diffused section by about one order of magnitude;
and a narrow transition region intimately connecting said out-diffused waveguide section and said in-diffused waveguide section, the width of said transition region along its optical axis being much greater than the wavelength of the optical signal passing through said waveguide.
2. The optical waveguide as defined in claim 1, wherein said substrate is a Lithium Niobate crystal, said out-diffused and in-diffused waveguide sections forming a continuous surface on said substrate.
3. The optical waveguide as defined in claim 1, wherein said in-diffused section includes a metallic material.
4. The optical waveguide as defined in claim 3, wherein said metallic material is titanium.
5. The optical waveguide as defined in claim 2, wherein said substrate includes an input out-diffused section, an output out-diffused section an intermediate titanium in-diffused section, each said out-diffused section being intimately connected to said in-diffused section by means of a narrow transition region.
6. The optical waveguide as defined in claim 2, wherein said input section includes a first edge adapted to be secured to a light source in light transmitting relation thereto and said output section includes a second edge remote from said first edge adapted to be secured to detector means in light transmitting relation thereto.
7. The optical waveguide as defined in claim 6, including signal interaction means secured to said intermediate section.
8. An optical guided wave signal processing device comprising:
a substrate;
a waveguide in a surface of said substrate, said waveguide having an input edge at one end of said substrate and an output edge at another end of said substrate remote from and opposed to said first edge;
an input out-diffused waveguide section extending from said input edge towards said output edge;
an output out-diffused waveguide section extending from said output edge towards said input edge;
an in-diffused waveguide section extending transversely of said substrate and intimately connected to each said input and output waveguide section by means of a narrow transition region;
the depths of said input out-diffused waveguide section and said output out-diffused section being greater than the depth of said in-diffused waveguide section by an order of magnitude, and said transition region having a width along its optical axis which is greater than the wavelength of the optical signal passing through said waveguide;
a collimating lens in said in-diffused section adjacent said input section;
a Fourier lens longitudinally spaced from said collimating lens in said in-diffused section adjacent said output section;
a surface acoustic wave signal means in said in-diffused section intermediate said lenses;
a light source coupled to said input edge in light transmitting relation thereto; and detector means coupled to said output edge in light transmitting relation thereto.
a substrate;
a waveguide in a surface of said substrate, said waveguide having an input edge at one end of said substrate and an output edge at another end of said substrate remote from and opposed to said first edge;
an input out-diffused waveguide section extending from said input edge towards said output edge;
an output out-diffused waveguide section extending from said output edge towards said input edge;
an in-diffused waveguide section extending transversely of said substrate and intimately connected to each said input and output waveguide section by means of a narrow transition region;
the depths of said input out-diffused waveguide section and said output out-diffused section being greater than the depth of said in-diffused waveguide section by an order of magnitude, and said transition region having a width along its optical axis which is greater than the wavelength of the optical signal passing through said waveguide;
a collimating lens in said in-diffused section adjacent said input section;
a Fourier lens longitudinally spaced from said collimating lens in said in-diffused section adjacent said output section;
a surface acoustic wave signal means in said in-diffused section intermediate said lenses;
a light source coupled to said input edge in light transmitting relation thereto; and detector means coupled to said output edge in light transmitting relation thereto.
9. The device as defined in claim 11, wherein said substrate is formed of Lithium Niobate.
10. The device as defined in claim 9, wherein the depth of each said out-diffused section is greater than the depth of said in diffused section is greater than the depth of said in-diffused section by about one order of magnitude.?@
11. The device as defined in claim 10, wherein the width along the optical axis of said waveguide of each said transition region is much greater than the wavelength of the optical energy passed through said waveguide.
12. The optical waveguide as defined in claim 10, wherein said out-diffused section exhibits an increase in the index of refraction to inhibit propagation of TM polarized modes.
13. A method of forming an optical waveguide on the surface of a lithium niobate crystal substrate, comprising the steps of:
depositing a layer of a metal on a portion of said surface of said substrate while masking the balance of said surface;
heating said surface at a predetermined temperature below the Curie temperature of said substrate for a first predetermined time interval and simultaneously exposing said substrate to an Argon gas and water vapour environment to form a metal in-diffused waveguide section on said portion of said surface;
heating said surface at a predetermined temperature below the Curie temperature of said substrate for a second predetermined time interval and simultaneously exposing said substrate to a dry Argon gas environment to form out-diffused waveguide sections on the balance of said surface; and exposing said substrate to an oxygen environment while permitting said substrate to cool to ambient temperature thereby forming a transition region intimately connecting said out-diffused waveguide and said in-diffused waveguide section, the width of said transition region along its optical axis being much greater than the wavelength of the optical signal passing through said waveguide and the depth of said out-diffused section being greater than the depth of said in-diffused section by about one order of magnitude.
depositing a layer of a metal on a portion of said surface of said substrate while masking the balance of said surface;
heating said surface at a predetermined temperature below the Curie temperature of said substrate for a first predetermined time interval and simultaneously exposing said substrate to an Argon gas and water vapour environment to form a metal in-diffused waveguide section on said portion of said surface;
heating said surface at a predetermined temperature below the Curie temperature of said substrate for a second predetermined time interval and simultaneously exposing said substrate to a dry Argon gas environment to form out-diffused waveguide sections on the balance of said surface; and exposing said substrate to an oxygen environment while permitting said substrate to cool to ambient temperature thereby forming a transition region intimately connecting said out-diffused waveguide and said in-diffused waveguide section, the width of said transition region along its optical axis being much greater than the wavelength of the optical signal passing through said waveguide and the depth of said out-diffused section being greater than the depth of said in-diffused section by about one order of magnitude.
14. The method as defined in claim 13 wherein said metal is titanium.
15. The method as defined in claim 13 wherein said second predetermined time interval ranges from several minutes to several hours.
16. The method as defined in claim 13 wherein said out-diffused surface sections inhibit propagation of TM
polarized modes.
polarized modes.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000507667A CA1264567A (en) | 1986-04-25 | 1986-04-25 | Integrated optics spectrum analyzer |
| GB8704443A GB2189899B (en) | 1986-04-25 | 1987-02-25 | Integrated optics spectrum analyser |
| US07/038,095 US4761048A (en) | 1986-04-25 | 1987-04-13 | Integrated optics spectrum analyzer |
| US07/129,506 US4762735A (en) | 1986-04-25 | 1987-12-07 | Integrated optics spectrum analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000507667A CA1264567A (en) | 1986-04-25 | 1986-04-25 | Integrated optics spectrum analyzer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1264567A true CA1264567A (en) | 1990-01-23 |
Family
ID=4132974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000507667A Expired - Fee Related CA1264567A (en) | 1986-04-25 | 1986-04-25 | Integrated optics spectrum analyzer |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US4761048A (en) |
| CA (1) | CA1264567A (en) |
| GB (1) | GB2189899B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04507299A (en) * | 1989-02-01 | 1992-12-17 | ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ | Nonlinear optical oscillator and method for controlling ferroelectric polarization region of semiconductor |
| US5027055A (en) * | 1990-01-10 | 1991-06-25 | The United States Of America As Represented By The Secretary Of The Navy | Compact optical RF spectrum analyzer |
| US5142596A (en) * | 1990-07-24 | 1992-08-25 | Matsushita Electric Industrial Co., Ltd. | Tapered light wave guide and wavelength converting element using the same |
| US5088105A (en) * | 1991-03-26 | 1992-02-11 | Spectra Diode Laboratories, Inc. | Optical amplifier with folded light path and laser-amplifier combination |
| US5644125A (en) * | 1994-11-23 | 1997-07-01 | Research Foundation Of State University Ny | Spectrometer employing a Mach Zehnder interferometer created by etching a waveguide on a substrate |
| US5800767A (en) * | 1994-09-16 | 1998-09-01 | The Board Of Trustees Of The Leland Stanford Junior University | Electric field domain patterning |
| US6185355B1 (en) * | 1998-09-01 | 2001-02-06 | Henry H. Hung | Process for making high yield, DC stable proton exchanged waveguide for active integrated optic devices |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3614198A (en) * | 1969-06-23 | 1971-10-19 | Bell Telephone Labor Inc | Thin-film optical devices |
| DE2421337C2 (en) * | 1974-05-02 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | Mode converter for optical waveguides |
| US4056304A (en) * | 1975-03-06 | 1977-11-01 | Rca Corporation | Light modulation employing single crystal optical waveguides of niobium-doped lithium tantalate |
| JPS54184A (en) * | 1977-06-02 | 1979-01-05 | Matsushita Electric Ind Co Ltd | Program controller |
| US4403825A (en) * | 1978-11-16 | 1983-09-13 | Hughes Aircraft Company | Integrated optics thin film devices and fabrication thereof |
| US4348074A (en) * | 1980-03-03 | 1982-09-07 | The United States Of America As Represented By The Secretary Of The Navy | Application of ion implantation to LiNbO3 integrated, optical spectrum analyzers |
| US4400052A (en) * | 1981-03-19 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Method for manufacturing birefringent integrated optics devices |
| US4611883A (en) * | 1981-05-01 | 1986-09-16 | Hughes Aircraft Company | Two-dimensional optics element for correcting aberrations |
| JPS57198410A (en) * | 1981-06-01 | 1982-12-06 | Nippon Sheet Glass Co Ltd | Optical plane circuit equipped with optical coupler |
| US4697868A (en) * | 1985-08-12 | 1987-10-06 | Trw Inc. | Integrated optical waveguide polarizer |
| US4715027A (en) * | 1986-05-29 | 1987-12-22 | Polaroid Corporation | Integrated optic multi/demultiplexer |
-
1986
- 1986-04-25 CA CA000507667A patent/CA1264567A/en not_active Expired - Fee Related
-
1987
- 1987-02-25 GB GB8704443A patent/GB2189899B/en not_active Expired - Fee Related
- 1987-04-13 US US07/038,095 patent/US4761048A/en not_active Expired - Fee Related
- 1987-12-07 US US07/129,506 patent/US4762735A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2189899A (en) | 1987-11-04 |
| US4762735A (en) | 1988-08-09 |
| GB8704443D0 (en) | 1987-04-01 |
| GB2189899B (en) | 1990-02-28 |
| US4761048A (en) | 1988-08-02 |
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