CA1300282C - Wire bonds and electrical contacts of an integrated circuit device - Google Patents

Wire bonds and electrical contacts of an integrated circuit device

Info

Publication number
CA1300282C
CA1300282C CA000566450A CA566450A CA1300282C CA 1300282 C CA1300282 C CA 1300282C CA 000566450 A CA000566450 A CA 000566450A CA 566450 A CA566450 A CA 566450A CA 1300282 C CA1300282 C CA 1300282C
Authority
CA
Canada
Prior art keywords
integrated circuit
circuit device
device package
lead fingers
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000566450A
Other languages
French (fr)
Inventor
Jon Long
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Corp
Original Assignee
LSI Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Corp filed Critical LSI Logic Corp
Application granted granted Critical
Publication of CA1300282C publication Critical patent/CA1300282C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

WIRE BONDS AND ELECTRICAL CONTACTS OF AN
INTEGRATED CIRCUIT DEVICE
Jon Long ABSTRACT

An integrated circuit device package includes a rigid frame and flexible tape assembly having wire leads between the die attach pad, conductive lead fingers, and the I.C.
chip. A dam structure prevents resin flow to ensure proper wire bonding and a wedge prevents electrical shorting. A
recognition pattern enables precise wire bonding. A epoxy molding compound is interposed in cavities formed in a Kapton layer to preclude delamination.

Description

~3(DO;~82 WIRE BONDS ~ND ELECTRICAL CONT~CTS OF ~N
INTEG~TED CIRCUIT DEVICE
Jon Long BACKGROUND OF THE INVENTION
Field of the Invention .
This invention relates to IC devices and in particular to the formation of wiring connec-tions of integrated circuits.
Description of the Prior Art During manufacture of IC devices, the circuit elements are formed on a die, and the IC die assembly is joined to a die attach pad, typically by an epoxy adhesive. Electrical lead wires are bonded to contact points of the IC device by bonding to conductive elements or fingers and/or with the die attach pad.
The lead wires in turn are coupled to external circuitry for processing data and control signals.
During the attachment of the IC die to the die attach pad, the epoxy adhesive which is made with a resin tends to bleed and flow along the surface of the pad beyond the area of joinder of the die and the pad. The flow of resin makes it difficult to properly bond the lead wires to the conductive die attach pad.
~ith prior art processes, it is necessary to exercise stringent control of the application of the adhesive material while it is being dispensed. Furthermore, limitations on the chemical properties of the adhesive are imposed. As a result, the problem of lead wire bonding becomes time-consuming and costly.

- ~L3~ 8:~

An additional problem associated with making wire connections is the possibility of electxical shorting to -~he die attach pad that may occur during the bonding of the lead wires to the lead fingers, which requires ex-tra care and testing during production. The die attach pad is made of an electrically conductive material, such as copper. The noninsulated lead wires when bonded to the lead fingers can inadvertently make contact with the conductive die attach pad, thereby creating an electrical shorting condition.
Also, during the mass production of IC devices, a multiplicity of lead wires are connected by means of automated bonding equipment to electrical contact points and bonding pads.
Prior production techniques relied on an operator to designate the lead area visually, and a computer to provide alignment of the contact points that are to be bonded by bonder apparatus having capillaries for providing the bonding material. As a result of the dramatic increase in the number of lead wires which are used with IC devices and the limitations of size and space provided between the components of an IC device, the lead wires by necessity are very closely spaced, thus requiring very accurate and precise bonding in order to avoid erratic connections and electrical shorting. Therefore, during the bonding process, it is necessary to align the capillaries of the bonder apparatus precisely relative to the electrical contact points on the bond pad of the die attach pad of the IC assembly.

Furthermore, with a composite rigid frame and flexible tape assembly, such as discussed below, it has been observed that when the IC device is subjected to a high temperature, such as occurs during vapor phase assembly which èmploys a temperature greater than 21~ Centigrade for example, or during heat testing, a "clam shell" effect occurs. This clam shell effect causes the iead fingers or wires of the IC assembly tG bow or separate so as to distort the planar elements of the IC device, which makes the device unusable.
Another problem that may occur as a result of the production process is the delamination of the Kapton layer that secures the lead fingers of the frame and tape assembly. During manufacture of an IC device using the frame and tape assembly, an insulating film made of a material such as Kapton la trade-mark of DuPont Corp.) is deposited on the flexible tape-like structure.
The Kapton film serves to secure the thin flexible conductive leads formed with the tape-like structure, and electrically insulates the leads from each other. Kapton material is subject to becoming brittle in the presence of moisture. Also, a continuous film of Kapton has a tendency to delaminate from the tape-like structure.
~UMMARY
An object of this invention is to provide an integrated circuit (IC) assembly wherein the problems associated with the assembly of the electrical leads of the inteyrated circuit assembly are effectively eliminated.

~3~

Another object of this invention is to provide an IC
device wherein the bonding of lead wires between the IC hip and the electrical contact points of a bond paid of the IC assembly is facilitated.
Another object is to provide an IC device wherein electrical shorting of the electrical leads to the die attach pad is effectively minimized.
A further object is to provide an IC device wherein structural distortion that may result when the IC device is subjected to high temperatures is avolded.
According to one feature of this invention, a dam made of insulating material is formed on the die attachment pad to encompass the IC die structure. The dam limits the flow of resin of the epoxy adhesive, which is used for attaching the IC die to the die attach pad, and the resin is contained within a cavity formed between the dam and the die.
Another feature of this invention is the provision of an insulator ridge which ensures that the bond wires remain spaced from the conductive die attachment pad to preclude electrical shorting.
An additional feature of this invention is the provision of a recognition pattern at specified locations on the flexible tape like structure. The pattern is sensed by an optical sensor, for example, to generate signals that are directed to a computer actuated bonder, which is aligned accurately with the electrical connection points on the bond pad of the IC assembly.

-2~

A further feature of this invention is the provision of an insulating molding material that is interposed in cavities between the Kapton layer to ensure that the lead fingers of the composite frame and tape assembly are securely held.
DESCRIPTION OF THE DRAWING
The invention will be described in detail with reference to the drawing in which:
FIG. 1 is a top plan view of a support assembly for an IC chip;
FIG. 2 is an enlarged side sectional view of a support assembly for an IC chip, which incorporates a flexible tape-like structure and rigid lead frame assembly;
FIGS. 3a-d are sectional side views of portions, broken away of the support assembly, illustrating the dam and wedge structures embodied in the inventive structure;
FIG. 4 is an enlarged sectional view of a portion of a support assembly for an IC chip, incorporating the dam and wedge structures and additionally a recognition pattern, as employed with this invention;
FIG. 5 is a sectional view of a portion of a support 4a CHP/M-442 1~28~

1 assembly for an IC chip, incorporating the feature of using 2 a molding compound in cavities between Kapton material to 3 secure the lead fingers of the assembly, in accordance with 4 this invention; and FIG. 6 is a representational sectional view of a 6 package including the frame and tape assembly which 7 incorporates the novel features of this invention.
8 Similar numerals refer to similar elements throughout g the drawing.

12 With reference to FIGS. 1 and 2, an IC assembly 13 comprises an IC chip 10 that is mounted to a die attach pad 14 22. Bond wires 18 are connected at one end to the surface 1~ of the IC chip device and at the other end to lead fingers 16 16. The outer portions 24 of the lead fingers 16 are in 17 electrical contact with lead bonds 26 which extend from the 18 enclosing package 32 to provide package leads 28. The 19 package leads 28 are connectable to conductive leads or wires that are provided by external circuitry. In this 21 manner, the integrated circuit has a conductivè path through 22 the IC package to external circuits for the transfer and ~3 exchange of data signals.
24 During the attachment of the IC die 10 to the die attachment pad 22 employing conventional semiconductor technology, an epoxy adhesive formed with resin is used. As 27 is well known, the resin in the epoxy has a tenden~y to flow 28 during the process of joining the die and the pad. The resin tends to flow towards the down bond channel 44 which has a number of electrical contact points to which wire 3 ` leads, such as leads 46 and 48 in FIGS. 3a and 3b, are 31 bonded. The wires 46 provide connec-tion from the die attach 32 pad to the inner lead fingers 16 and thus to an external 33 control for supplying voltage to the IC die attachment 34 pad. Wires 48 provide connection from the die attachment pad to the IC chip 10 whereby the IC device controls the 36 polarity of the die attach pad. However, the presence of 37 resin that flows from the adhesive makes it difficult, if CHP/M-442 ~0~28~

1 not impossible, to make a secure bond between the wire leads 2 and the electrical contact points in the down bond area.
3 To avoid the deleterious effect of the resin bleeding 4 from the epoxy adhesive over the down bond channel 44 of the die attach pad, a dam 42 that circumscribes the IC die 10 is 6 provided, as shown in FIG. 3a. The dam is formed on the 7 surface of the die attach pacl and is spaced close to the a periphery of the IC die. The dam is formed preferably of g Kapton ~trademark of Du Pont) which is an insulating material. The dielectric Kapton material forms a continuous 11 wall or barrier and acts effectively to impede the flow of 12 the resin across the surface of the die attach pad and to 13 contain the resin between the IC device 10 and the dam. As 14 a result, when lead wires are attached to the die attach pad at the down bond channel, the resin does not interfere with 16 the attachment of the ends of wire leads 46 to the contact 17 points on the surface of the pad 22, or of wire leads 48.
18 In accordance with another feature of this invention, a 19 wedge S2 is provided between the die attach pad 22 and the lead fingers 16 so that the lead wires 50 from the IC device 21 10 to the lead fingers 16 are prevented from contacting the 22 die attach pad 22. As illustrated in FIGS. 3c and 3d, the 23 wedge 52 is formed at the area between the pad 22 and the 2~ lead finger 16 and is so positioned as to maintain the desired separation of the wire 50 from the pad. The wedge 26 52 may be made of Kapton or of any dielectric material that can be formed to the desired wedge shape.
28 With reference to FIG. 4, a recognition pattern 54 is incorporated in the corners of the tape-like structure 14 to enable alignment of electrical contact points 56 of the down bond channel and contact points 58 for precise bonding of the IC device to the inner lead fingers 16 by an automated 32 X-Y bonder. As it is necessary to align the capillaries of 33 the bonder from which bonding wire material is ejected to 34 the contact points at which wire leads are connected very accurately, the recognition pattern serves as a target to 36 enable precise alignment. The recognition pattern is 37 characterized by providing pairs of spaced geometric CHP/M-442 ~30028~

1 elements, which are illustrated as being rectangular in this 2 embodiment, that are formed by etching a specified design on 3 the metal layer of the tape structure 14. The spaced 4 elements of one pair define a first axis and the spaced elements of a second pair define an axis different in 6 direction than the first axis. The spaced elements include 7 components that are collinear and aligned along one axis or 8 direction and at least two other collinear components g aligned along a second axis, preferably at 90 to the first axis. An optical scanner scans along the linear direction 11 provided by the edges of a pair of components of the pattern 12 and if the edges are not scanned in precise alignment, an 13 error signal is generated which is fed to a computer. The 14 computer then adjusts the X-Y position of the automated bonder so that it is properly aligned with relation to the 16 contact points that are to be bonded.
17 FIGS. 4 and 5 illustrate another feature of this inven-18 tion which is directed to the wire leads of the IC tape 19 structure and frame assembly. During manufacture of the tape assembly, an insulating film ~ preferably made of 21 Kapton is deposited over the tape-like structure 14 to ~2 secure the thin flexible lead fingers 16 and to provide 23 insulation between the individual leads. The insulating 24 film ~ is etched to produce cavities 62 that are interposed between the remaining unetched sections of the insulating 2 Kapton film. The assembly including the tape lg, the frame 27 12 and the etched Kapton film with the cavities is housed in a plastic package 32, as is well known in the industry. In keeping with this invention, an epoxy molding compound is then forced through an aperture of the package mold to form 3l the plastic package. The molding compound flows into the 32 cavities between the Kapton sections~ The molding compound effectively locks around each conductive lead to provide 33 electrical insulation and to secure the thin flexible lead 34 fingers firmly in place.
The use of the epoxy molding compound effectively 36 lowers the moisture penetration, and since the Kapton is 37 known to be sensitive to moisture and tends to become CHP/M-442 1~00282 1 brittle, the partial substitution of the molding compound 2 minimizes problems that were encountered with a continuous 3 complete layer of Kapton. Furthermore, the problem of 4 delamination, which a continuous film of Kapton can experience, is substantially eliminated. Also, by having 6 the cavities filled with molding compound, the detrimental 7 effects of clam shelling is reduced.

l4

Claims (8)

1. An integrated circuit device package comprising:
a flexible tape-like structure having inner lead fingers and outer lead fingers;
a rigid lead frame joined to said structure having internal leads aligned to and connected to said outer lead fingers;
an integrated circuit die on which an integrated circuit is formed;
a die attach pad to which said integrated circuit die is seated in said structure;
wire leads connected to said integrated circuit die and to said lead fingers; and a raised strip formed on said pad and having an insulative top surface for separating said wire leads from said die attach pad to prevent contact of said wires with said pad.
2. An integrated circuit device package as in Claim 1, wherein said raised strip is made of Kapton (a trade-mark of DuPont Corp.).
3. An integrated circuit device package as in Claim 1, including a recognition pattern formed on said tape-like structure.
4. An integrated circuit device package as in Claim 3, wherein said recognition pattern comprises pairs of spaced elements, each pair having components that are collinear to define first and second axes.
5. An integrated circuit device package as in Claim 4, wherein said first axis is substantially orthogonal to said second axis.
6. An integrated circuit device package as in Claim 4, wherein said spaced elements are rectangular and sides of said rectangles are aligned along said first and second axes.
7. An integrated circuit device package as in Claim 1, including an insulating film deposited over said tape-like structure, said film having cavities formed therein, and an epoxy molding compound contained within said cavities.
8. An integrated circuit device assembly as in Claim 1, further comprising:
a moisture sensitive film deposited on said tape-like structure to overlap said lead fingers, cavities being defined through the film where it overlaps the lead fingers; and an epoxy molding compound filling said cavities.
CA000566450A 1987-05-13 1988-05-11 Wire bonds and electrical contacts of an integrated circuit device Expired - Lifetime CA1300282C (en)

Applications Claiming Priority (2)

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US07/049,641 1987-05-13
US07/049,641 US4771330A (en) 1987-05-13 1987-05-13 Wire bonds and electrical contacts of an integrated circuit device

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CA1300282C true CA1300282C (en) 1992-05-05

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EP (1) EP0314707B1 (en)
JP (2) JPH01190102A (en)
KR (1) KR890700925A (en)
AU (1) AU606386B2 (en)
CA (1) CA1300282C (en)
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WO (1) WO1988009056A1 (en)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987475A (en) * 1988-02-29 1991-01-22 Digital Equipment Corporation Alignment of leads for ceramic integrated circuit packages
US5184207A (en) * 1988-12-07 1993-02-02 Tribotech Semiconductor die packages having lead support frame
US4916519A (en) * 1989-05-30 1990-04-10 International Business Machines Corporation Semiconductor package
US5299730A (en) * 1989-08-28 1994-04-05 Lsi Logic Corporation Method and apparatus for isolation of flux materials in flip-chip manufacturing
US5227663A (en) * 1989-12-19 1993-07-13 Lsi Logic Corporation Integral dam and heat sink for semiconductor device assembly
US5175612A (en) * 1989-12-19 1992-12-29 Lsi Logic Corporation Heat sink for semiconductor device assembly
JP2527828B2 (en) * 1990-02-27 1996-08-28 三菱電機株式会社 Semiconductor package
US5173766A (en) * 1990-06-25 1992-12-22 Lsi Logic Corporation Semiconductor device package and method of making such a package
US5168345A (en) * 1990-08-15 1992-12-01 Lsi Logic Corporation Semiconductor device having a universal die size inner lead layout
US5399903A (en) * 1990-08-15 1995-03-21 Lsi Logic Corporation Semiconductor device having an universal die size inner lead layout
US5142450A (en) * 1991-04-12 1992-08-25 Motorola, Inc. Non-contact lead design and package
GB2257827B (en) * 1991-07-17 1995-05-03 Lsi Logic Europ Support for semiconductor bond wires
US5451813A (en) * 1991-09-05 1995-09-19 Rohm Co., Ltd. Semiconductor device with lead frame having different thicknesses
JP2970111B2 (en) * 1991-09-19 1999-11-02 日本電気株式会社 Lead frame, semiconductor device and method of manufacturing the same
US5434750A (en) * 1992-02-07 1995-07-18 Lsi Logic Corporation Partially-molded, PCB chip carrier package for certain non-square die shapes
JPH0653277A (en) * 1992-06-04 1994-02-25 Lsi Logic Corp Semiconductor device assembly and its assembly method
US5801432A (en) * 1992-06-04 1998-09-01 Lsi Logic Corporation Electronic system using multi-layer tab tape semiconductor device having distinct signal, power and ground planes
US5854085A (en) * 1992-06-04 1998-12-29 Lsi Logic Corporation Multi-layer tab tape having distinct signal, power and ground planes, semiconductor device assembly employing same, apparatus for and method of assembling same
US5532934A (en) * 1992-07-17 1996-07-02 Lsi Logic Corporation Floorplanning technique using multi-partitioning based on a partition cost factor for non-square shaped partitions
US5340772A (en) * 1992-07-17 1994-08-23 Lsi Logic Corporation Method of increasing the layout efficiency of dies on a wafer and increasing the ratio of I/O area to active area per die
US5561086A (en) * 1993-06-18 1996-10-01 Lsi Logic Corporation Techniques for mounting semiconductor dies in die-receiving areas having support structure having notches
JPH0714976A (en) * 1993-06-24 1995-01-17 Shinko Electric Ind Co Ltd Lead frame and semiconductor device
US5438477A (en) * 1993-08-12 1995-08-01 Lsi Logic Corporation Die-attach technique for flip-chip style mounting of semiconductor dies
US5388327A (en) * 1993-09-15 1995-02-14 Lsi Logic Corporation Fabrication of a dissolvable film carrier containing conductive bump contacts for placement on a semiconductor device package
US5455387A (en) * 1994-07-18 1995-10-03 Olin Corporation Semiconductor package with chip redistribution interposer
JP2546195B2 (en) * 1994-10-06 1996-10-23 日本電気株式会社 Resin-sealed semiconductor device
KR100362504B1 (en) * 1996-01-22 2003-01-29 앰코 테크놀로지 코리아 주식회사 Method for manufacturing chip size package
US6043100A (en) * 1996-04-19 2000-03-28 Weaver; Kevin Chip on tape die reframe process
US5901041A (en) * 1997-12-02 1999-05-04 Northern Telecom Limited Flexible integrated circuit package
JPH11233531A (en) * 1998-02-17 1999-08-27 Nec Corp Structure and method for packaging electronic part
US5920112A (en) * 1998-04-07 1999-07-06 Micro Networks Corporation Circuit including a corral for containing a protective coating, and method of making same
US6258629B1 (en) * 1999-08-09 2001-07-10 Amkor Technology, Inc. Electronic device package and leadframe and method for making the package
US7199477B1 (en) * 2000-09-29 2007-04-03 Altera Corporation Multi-tiered lead package for an integrated circuit
US6908843B2 (en) * 2001-12-28 2005-06-21 Texas Instruments Incorporated Method and system of wire bonding using interposer pads
US6768212B2 (en) * 2002-01-24 2004-07-27 Texas Instruments Incorporated Semiconductor packages and methods for manufacturing such semiconductor packages
US7164192B2 (en) * 2003-02-10 2007-01-16 Skyworks Solutions, Inc. Semiconductor die package with reduced inductance and reduced die attach flow out
US20070031996A1 (en) * 2003-04-26 2007-02-08 Chopin Sheila F Packaged integrated circuit having a heat spreader and method therefor
US7323765B2 (en) * 2004-10-13 2008-01-29 Atmel Corporation Die attach paddle for mounting integrated circuit die
US7358617B2 (en) * 2004-11-29 2008-04-15 Texas Instruments Incorporated Bond pad for ball grid array package
US7378721B2 (en) * 2005-12-05 2008-05-27 Honeywell International Inc. Chip on lead frame for small package speed sensor
US8258609B2 (en) * 2007-03-21 2012-09-04 Stats Chippac Ltd. Integrated circuit package system with lead support

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31967E (en) * 1975-07-07 1985-08-13 National Semiconductor Corporation Gang bonding interconnect tape for semiconductive devices and method of making same
US4234666A (en) * 1978-07-26 1980-11-18 Western Electric Company, Inc. Carrier tapes for semiconductor devices
JPS5624958A (en) * 1979-08-07 1981-03-10 Nec Kyushu Ltd Lead frame for semiconductor device
JPS577953A (en) * 1980-06-18 1982-01-16 Matsushita Electric Ind Co Ltd Semiconductor device
US4380042A (en) * 1981-02-23 1983-04-12 Angelucci Sr Thomas L Printed circuit lead carrier tape
US4496965A (en) * 1981-05-18 1985-01-29 Texas Instruments Incorporated Stacked interdigitated lead frame assembly
EP0078606A3 (en) * 1981-11-02 1985-04-24 Texas Instruments Incorporated A semiconductor assembly with wire support
US4390598A (en) * 1982-04-05 1983-06-28 Fairchild Camera & Instrument Corp. Lead format for tape automated bonding
US4479298A (en) * 1983-07-26 1984-10-30 Storage Technology Partners Alignment apparatus and method for mounting LSI and VLSI packages to a printed circuit board
JPS6084854A (en) * 1983-10-14 1985-05-14 Toshiba Corp Resin-sealed type semiconductor device
US4672421A (en) * 1984-04-02 1987-06-09 Motorola, Inc. Semiconductor packaging and method
JPS60225450A (en) * 1984-04-24 1985-11-09 Furukawa Electric Co Ltd:The Manufacture of semiconductor device
US4663650A (en) * 1984-05-02 1987-05-05 Gte Products Corporation Packaged integrated circuit chip
US4701781A (en) * 1984-07-05 1987-10-20 National Semiconductor Corporation Pre-testable semiconductor die package
JPS61166501A (en) * 1985-01-18 1986-07-28 Yoshio Morita Formation of thin optical titanium dioxide film by reaction of aqueous solution
JPS622626A (en) * 1985-06-28 1987-01-08 Nec Corp Semiconductor device
US4754317A (en) * 1986-04-28 1988-06-28 Monolithic Memories, Inc. Integrated circuit die-to-lead frame interconnection assembly and method

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DE3851741T2 (en) 1995-02-02
EP0314707B1 (en) 1994-10-05
AU606386B2 (en) 1991-02-07
JPH01190102A (en) 1989-07-31
EP0314707A4 (en) 1990-09-19
JP2583597B2 (en) 1997-02-19
WO1988009056A1 (en) 1988-11-17
US4771330A (en) 1988-09-13
KR890700925A (en) 1989-04-28
DE3851741D1 (en) 1994-11-10
EP0314707A1 (en) 1989-05-10
JPH01503184A (en) 1989-10-26
AU1187488A (en) 1988-12-06

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