CA2008899A1 - Electrically pumped vertical cavity laser - Google Patents
Electrically pumped vertical cavity laserInfo
- Publication number
- CA2008899A1 CA2008899A1 CA2008899A CA2008899A CA2008899A1 CA 2008899 A1 CA2008899 A1 CA 2008899A1 CA 2008899 A CA2008899 A CA 2008899A CA 2008899 A CA2008899 A CA 2008899A CA 2008899 A1 CA2008899 A1 CA 2008899A1
- Authority
- CA
- Canada
- Prior art keywords
- vertical cavity
- electrically pumped
- dbr
- cavity
- supplemented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Abstract
Abstract of the Disclosure An electrically pumped vertical cavity laser depends upon reflection as between an unaided DBR reflector on one side of the cavity and a metal-supplemented DBR
reflector on the other. Placement of the shorter supplemented DBR on the p-conductivity type side of the cavity reduces the resistance of the electrical series pump path. Permitted use of an active region of a thickness of 1µm or less in the lasing direction results in low lasing threshold. The structural approach is of significance for laser integration in integrated circuits, whether electro-optic or all-optic.
reflector on the other. Placement of the shorter supplemented DBR on the p-conductivity type side of the cavity reduces the resistance of the electrical series pump path. Permitted use of an active region of a thickness of 1µm or less in the lasing direction results in low lasing threshold. The structural approach is of significance for laser integration in integrated circuits, whether electro-optic or all-optic.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US343,760 | 1989-04-26 | ||
US07/343,760 US4991179A (en) | 1989-04-26 | 1989-04-26 | Electrically pumped vertical cavity laser |
SG44894A SG44894G (en) | 1989-04-26 | 1994-03-26 | Electrically pumped vertical cavity laser |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2008899A1 true CA2008899A1 (en) | 1990-10-26 |
CA2008899C CA2008899C (en) | 1994-02-01 |
Family
ID=26663995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002008899A Expired - Lifetime CA2008899C (en) | 1989-04-26 | 1990-01-30 | Electrically pumped vertical cavity laser |
Country Status (8)
Country | Link |
---|---|
US (1) | US4991179A (en) |
EP (1) | EP0395315B1 (en) |
JP (1) | JPH07105572B2 (en) |
KR (1) | KR940001793B1 (en) |
CA (1) | CA2008899C (en) |
DE (1) | DE69006087T2 (en) |
HK (1) | HK108194A (en) |
SG (1) | SG44894G (en) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5260589A (en) * | 1990-11-02 | 1993-11-09 | Norikatsu Yamauchi | Semiconductor device having reflecting layers made of varying unit semiconductors |
US5313324A (en) * | 1991-03-27 | 1994-05-17 | Massachusetts Institute Of Technology | Solid state optical converter |
JPH04333290A (en) * | 1991-05-08 | 1992-11-20 | Nec Corp | Vertical resonator type area emission laser and area input-output photoelectric fusion element |
US5625636A (en) * | 1991-10-11 | 1997-04-29 | Bryan; Robert P. | Integration of photoactive and electroactive components with vertical cavity surface emitting lasers |
US5206872A (en) * | 1991-11-01 | 1993-04-27 | At&T Bell Laboratories | Surface emitting laser |
US5258990A (en) * | 1991-11-07 | 1993-11-02 | The United States Of America As Represented By The Secretary Of The United States Department Of Energy | Visible light surface emitting semiconductor laser |
US5404373A (en) * | 1991-11-08 | 1995-04-04 | University Of New Mexico | Electro-optical device |
FR2685098B1 (en) * | 1991-12-12 | 1995-02-10 | Andre Schiltz | METHOD OF MOUNTING AND OPTICAL COUPLING ON A SUBSTRATE AND SUBSTRATE PROVIDED WITH OPTICAL FIBER. |
US5408105A (en) * | 1992-02-19 | 1995-04-18 | Matsushita Electric Industrial Co., Ltd. | Optoelectronic semiconductor device with mesa |
US5325386A (en) * | 1992-04-21 | 1994-06-28 | Bandgap Technology Corporation | Vertical-cavity surface emitting laser assay display system |
US5245622A (en) * | 1992-05-07 | 1993-09-14 | Bandgap Technology Corporation | Vertical-cavity surface-emitting lasers with intra-cavity structures |
US5244749A (en) * | 1992-08-03 | 1993-09-14 | At&T Bell Laboratories | Article comprising an epitaxial multilayer mirror |
DE4240706A1 (en) * | 1992-12-03 | 1994-06-09 | Siemens Ag | Surface emitting laser diode |
JPH06347734A (en) * | 1993-06-11 | 1994-12-22 | Nec Corp | Surface type optical switch |
US5475701A (en) * | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
US5432809A (en) * | 1994-06-15 | 1995-07-11 | Motorola, Inc. | VCSEL with Al-free cavity region |
FR2724056B1 (en) * | 1994-08-23 | 1996-11-15 | France Telecom | OPTICAL, OPTOELECTRONIC OR PHOTONIC COMPONENT CONTAINING AT LEAST ONE LATERAL CONFINED OPTICAL CAVITY AND PROCESS FOR ITS REALIZATION |
US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
US5960024A (en) | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
US6577658B1 (en) | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
NL1015714C2 (en) * | 2000-07-14 | 2002-01-15 | Dsm Nv | Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid. |
US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
US6671304B2 (en) | 2001-08-28 | 2003-12-30 | The United States Of America As Represented By The Secretary Of The Navy | Amplitude-modulated laser for high-bandwidth communications systems |
DE102004057802B4 (en) * | 2004-11-30 | 2011-03-24 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with intermediate layer |
DE102006004591A1 (en) * | 2005-09-29 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
WO2007084785A2 (en) * | 2006-01-20 | 2007-07-26 | Massachusetts Institute Of Technology | Surface-emitting fiber laser |
KR101030659B1 (en) * | 2006-03-10 | 2011-04-20 | 파나소닉 전공 주식회사 | Light-emitting device |
US7772615B2 (en) * | 2007-08-10 | 2010-08-10 | Connector Optics | Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon |
JP6450743B2 (en) | 2013-03-15 | 2019-01-09 | プレビウム リサーチ インコーポレイテッド | Variable laser array system |
WO2014144998A2 (en) * | 2013-03-15 | 2014-09-18 | Praevium Researach, Inc. | Tunable laser array system |
JP2017216348A (en) * | 2016-05-31 | 2017-12-07 | 三菱電機株式会社 | End face emission type semiconductor laser |
CN113675726A (en) * | 2021-10-21 | 2021-11-19 | 福建慧芯激光科技有限公司 | Epitaxial structure of high-speed vertical cavity surface emitting laser |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163953A (en) * | 1977-07-07 | 1979-08-07 | Northern Telecom Limited | Double heterostructure laser for direct coupling to an optical fiber |
US4309670A (en) * | 1979-09-13 | 1982-01-05 | Xerox Corporation | Transverse light emitting electroluminescent devices |
JPS58180080A (en) * | 1982-04-15 | 1983-10-21 | Mitsubishi Electric Corp | Semiconductor laser device |
NL8602653A (en) * | 1986-10-23 | 1988-05-16 | Philips Nv | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF. |
US4873696A (en) * | 1988-10-31 | 1989-10-10 | The Regents Of The University Of California | Surface-emitting lasers with periodic gain and a parallel driven nipi structure |
US4999842A (en) * | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
-
1989
- 1989-04-26 US US07/343,760 patent/US4991179A/en not_active Expired - Lifetime
-
1990
- 1990-01-30 CA CA002008899A patent/CA2008899C/en not_active Expired - Lifetime
- 1990-04-20 DE DE69006087T patent/DE69006087T2/en not_active Expired - Lifetime
- 1990-04-20 EP EP90304256A patent/EP0395315B1/en not_active Expired - Lifetime
- 1990-04-25 KR KR1019900005802A patent/KR940001793B1/en not_active IP Right Cessation
- 1990-04-25 JP JP2107735A patent/JPH07105572B2/en not_active Expired - Lifetime
-
1994
- 1994-03-26 SG SG44894A patent/SG44894G/en unknown
- 1994-10-06 HK HK108194A patent/HK108194A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0395315A2 (en) | 1990-10-31 |
EP0395315B1 (en) | 1994-01-19 |
HK108194A (en) | 1994-10-14 |
KR940001793B1 (en) | 1994-03-05 |
US4991179A (en) | 1991-02-05 |
EP0395315A3 (en) | 1991-09-11 |
SG44894G (en) | 1995-03-17 |
DE69006087D1 (en) | 1994-03-03 |
JPH02302085A (en) | 1990-12-14 |
DE69006087T2 (en) | 1994-05-26 |
JPH07105572B2 (en) | 1995-11-13 |
KR900017241A (en) | 1990-11-15 |
CA2008899C (en) | 1994-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKEX | Expiry |