CA2011627C - Method of manufacturing active matrix display device using insulation layer formed by the ale method - Google Patents
Method of manufacturing active matrix display device using insulation layer formed by the ale methodInfo
- Publication number
- CA2011627C CA2011627C CA002011627A CA2011627A CA2011627C CA 2011627 C CA2011627 C CA 2011627C CA 002011627 A CA002011627 A CA 002011627A CA 2011627 A CA2011627 A CA 2011627A CA 2011627 C CA2011627 C CA 2011627C
- Authority
- CA
- Canada
- Prior art keywords
- gas
- layer
- substrate
- insulation layer
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009413 insulation Methods 0.000 title claims abstract description 156
- 238000000034 method Methods 0.000 title claims abstract description 87
- 239000011159 matrix material Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 170
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000003990 capacitor Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 28
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 19
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 351
- 239000007789 gas Substances 0.000 claims description 258
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 40
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 10
- YNLAOSYQHBDIKW-UHFFFAOYSA-M diethylaluminium chloride Chemical compound CC[Al](Cl)CC YNLAOSYQHBDIKW-UHFFFAOYSA-M 0.000 claims description 7
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 claims description 7
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 claims description 7
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 7
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 39
- 238000003877 atomic layer epitaxy Methods 0.000 description 33
- 150000001875 compounds Chemical class 0.000 description 17
- 229910001868 water Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010061 TiC13 Inorganic materials 0.000 description 1
- 229910010066 TiC14 Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 206010016256 fatigue Diseases 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Abstract
There is disclosed a method of manufacturing an active matrix display device, in which particular emphasis is laid on the forming step of an insulation layer by the ALE method. The insulation layer can be a gate insulation layer, an inter-busline insulation layer, a protection layer or an auxiliary capacitor insulation layer of the display device. The method of forming the insulation layer comprises a predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H2O and/or O2 and form the metal oxide, under molecular flow condition for the duration of depositing almost a single atomic layer, and next subjecting the surface of the thus formed metal inorganic/
organic compound layer to the H2O vapor and/or O2 gas under molecular flow condition for the duration of replacing the metal inorganic/organic compound layer to the metal oxide layer. The subsequent steps after forming of the insulation layer include deposition steps of silicon nitride and amorphous silicon layers using the same plasma CVD apparatus. The molecular flow condition is obtained by maintaining the pressure in a reaction chamber within a range between 1 and several tens of milli-Torr.
The invention reduces defects such as cracks and pinholes and increases the electrical breakdown voltage.
organic compound layer to the H2O vapor and/or O2 gas under molecular flow condition for the duration of replacing the metal inorganic/organic compound layer to the metal oxide layer. The subsequent steps after forming of the insulation layer include deposition steps of silicon nitride and amorphous silicon layers using the same plasma CVD apparatus. The molecular flow condition is obtained by maintaining the pressure in a reaction chamber within a range between 1 and several tens of milli-Torr.
The invention reduces defects such as cracks and pinholes and increases the electrical breakdown voltage.
Description
- 20:1~6~7 TITLE OF THE INV~I.110N
METHOD OF MANUFACTURING ACTIVE MATRIX DISPLAY DEVICE
USING INSULATION LAYER FORMED BY THE ALE METHOD
BAC~GRO~ND OF THE INV~I.110N
1. Field of the Invention This invention relates to a method of manufacturing an active matrix display device, and more particularly to a method of forming insulation layers used in the active matrix display device. In the active matrix display device, a plurality of display elements are arranged in rows and columns and driven by a plurality of thin film transistors located at each display element position. The insulation layers are used for forming thin film transistors, in which a gate insulation layer and a protection layer covering the thin film transistor are formed. Further, two groups of bus lines are formed on a substrate in the row and column directions respectively to drive the thin film transistors, and two groups are to be insulated from each other at the crossing points by an inter-busline insulation layer. In some cases, the active matrix display device provides an auxiliary capacitor for each display element, the capacitor having a capacitor insulation layer. The present invention relates to the method of forming any of the above insulation layers.
METHOD OF MANUFACTURING ACTIVE MATRIX DISPLAY DEVICE
USING INSULATION LAYER FORMED BY THE ALE METHOD
BAC~GRO~ND OF THE INV~I.110N
1. Field of the Invention This invention relates to a method of manufacturing an active matrix display device, and more particularly to a method of forming insulation layers used in the active matrix display device. In the active matrix display device, a plurality of display elements are arranged in rows and columns and driven by a plurality of thin film transistors located at each display element position. The insulation layers are used for forming thin film transistors, in which a gate insulation layer and a protection layer covering the thin film transistor are formed. Further, two groups of bus lines are formed on a substrate in the row and column directions respectively to drive the thin film transistors, and two groups are to be insulated from each other at the crossing points by an inter-busline insulation layer. In some cases, the active matrix display device provides an auxiliary capacitor for each display element, the capacitor having a capacitor insulation layer. The present invention relates to the method of forming any of the above insulation layers.
2. Description of the Related Art Thin film transistors (hereinafter abbreviated as TFT) are used in an active matrix display device to drive - 201~27 each display element. The TFT has a gate insulation layer formed between a gate electrode and an amorphous silicon semiconductor layer. In order to drive each TFT, gate bus lines and drain bus lines are formed in the row and column directions respectively. The gate bus line and drain bus line must be insulated from each other by insulation layer at the crossing point. Further, it is necessary to cover and to protect at least TFT region with a protection layer at the final stage of fabrication of a substrate.
Thus insulation iayers are needed at different portions of the display device structure and are formed at different phases in fabrication. In active matrix display devices having TFTs, materials such as indium tin oxide (abbreviated as ITO), amorphous silicon and aluminum are utilized. These materials re~uire process temperatures as low as possible during the processes. Therefore, insulation layers are preferably deposited at low substrate temperatures which will not cause bad effects on the grown material. A plasma CVD method is known as a low temperature CVD process and is widely used in manufacturing active matrix display devices.
` In forming the TFT, for example, a metal layer is first deposited on a substrate and is patterned, with a result of forming a gate electrode. A gate insulation layer is next formed thereon. The gate insulation layer is of silicon nitride (SiNX) or silicon oxynitride (SiON), and 20~1~27 is formed on the substrate by the plasma CVD method, in which the substrate temperature is maintained at around 350C. Thereafter, an amorphous silicon ~a-Si:H) is deposited on the surface of the gate insulation layer using the same plasma CVD apparatus without a break of vacuum, only source gases being changed. After patterning the amorphous silicon layer, source and drain electrodes are formed thereon, thus the TFTs are formed on the substrate.
In a similar way, an inter-busline insulation layer, which insulates gate bus lines from drain (or source) bus lines, is formed by the plasma CVD method.
Sometimes, the inter-busline insulation layer is formed simultaneously with the forming step of gate insulation layer using the same plasma CVD apparatus.
The substrate (first substrate) is sealed with another opposite (second) substrate at the final stage of display device fabrication, and light influencing material such as liquid crystal is sealed between two substrates.
Therefore, another insulation layer is necessary in order to protect amorphous silicon (a-Si:H) portions on the first substrate before the sealing process. The protection (insulation) layer is deposited at least on the TFT
portions in the similar way.
In order to improve picture quality of active matrix display devices, it is known that an auxiliary capacitor is formed in the display device arranged at each corresponding position to the display elements. In this case, a transparent electrode of the display element connected to the source electrode of the TFT is utilized as a first electrode of the auxiliary capacitor, and either an extended portion of the adjacent gate bus line or a separately formed earth bus line is utilized as a second capaci~or electrode, thereby a capacitor insulation layer being formed between these two electrodes of the auxiliary capacitor.
Existing four kinds of insulation layers such as gate insulation layer, inter-busline insulation layer, protection layer and capacitor insulation layer, which are generally formed by the known plasma CVD method at low temperatures, have essentially a drawback of poor covering capability when deposited on the substrate surface having steps. The formed insulation layer is weak in mechanical strength and easily forms cracks, resulting in decreasing a withstanding voltage and an insulation resistance of the insulation layer.
~ eplacing the existing plasma CVD method, other CVD methods having a different idea of deposition are disclosed in the following patents:
U.S. Pat. No. 4,058,430 issued on Nov. 15, 1977 to Tuomo Suntola etal. entitled "Method for producing compound thin films";
U.S. Pat. No. 4,486,487 issued on Dec. 4, 1984 to 201 ~ 6~7 , Jarmo I. Skarp entitled "Combination film, in particular for thin film electroluminescent structures"; and U.S. Pat. No. 4,389,973 issued on Jan. 28, 1983 to Tuomo S. Santola etal. entitled "Apparatus for performing growth of compound thin filmsn.
The principle of the above disclosures is to utilize in common the so-called "atomic layer epitaxy"
method which is abbreviated as "ALE" method.
The method of Pat. No. 4,058,430 comprises the steps of subjecting the substrate to the vapor of a first kind of element forming a single atomic layer, and subjecting thus formed surface of the single atomic layer to the vapor of a second kind of element which can react with the first element resulting in forming a single layer of compound of first and second elements. These steps are repeated until a desired thickness can be obtained. The method discloses formation of thin films of light emitting semiconductor or resistance layers.
Pat. No. 4,486,487 discloses a method of forming a combination film of aluminum oxide and titanium oxide utilizing the ALE method.
Pat. No. 4,389,973 discloses a method and an apparatus for forming a compound thin films such as tantalum oxide, zinc sulphide and aluminum oxide by the ALE
method emphasizing the apparatus used therefor.
201~627 .
S~ARY OF T~E INV~N1 10N
It is a general object of the invention, therefore to provide a method of manufacturing an active matrix display device using the insulation layer, which is grown by the ALE method and is strong against electrical breakdown and has almost no defects such as cracks and pinholes.
It is a more specific object of the invention to provide a method of manufacturing an active matrix display device, wherein a gate insulation layer of thin film transistor of the display device is formed of the insulation layer grown by the ALE method.
It is another object of the invention to provide a method of manufacturing an active matrix display device, wherein a inter-busline insulation layer of the display device is formed of the insulation layer grown by the ALE
method.
It is still another object of the invention to provide a method of manufacturing an active matrix display device, wherein a protection layer covering thin film transistor of the display device is rormed of the insulation layer grown by the ALE method.
It is further object of the invention to provide a method of manufacturing an active matrix display device, wherein auxiliary capacitor is formed to each display element and a capacitor insulation layer thereof is formed 2~ S27 of the insulation layer grown by the ALE method.
It is still a further object of the invention to provide a method of forming a composite insulation layer comprising different composition layers formed by the ALE method.
It is still a further object of the invention to provide a method of forming a thin film transistor, wherein an amorphous silicon is used as an active semiconductor layer and the insulation layer formed by the ALE method is used as a gate insulation layer.
The above objects are achieved by the method of form-ing the insulation layer in accordance with the present invention, the method comprising a predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H2O and/or 2 and form the metal oxide, under molecular flow condition for the duration of depositing almost a single atomic layer, and next subjecting the surface of the thus formed metal inorganic/organic compound layer to the H2O vapor and/or 2 gas under molecular flow condition for the duration of replacing the metal inorganic/organic compound layer to the metal oxide layer.
When aluminum or titanium compounds are used as the metal inorganic/organic compound, aluminum oxide or titanium oxide layers respectively is grown as the insulation layer.
Accordlng to a flrst broad aspect, the lnventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each dlsplay element comprlslng flrst and second transparent electrodes formed on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor located at each correspondlng posltlon of the dlsplay elements and havlng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, and at least gate bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon, sald manufacturlng method comprlslng the steps of formlng the gate lnsulatlon layer of the thln fllm translstor, namely: (a) provldlng a reactlon chamber comprl-slng an lnlet for a flrst gas and an lnlet for a second gas and an lnlet for a barrler gas, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed - 7a -..~
to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; (b) dlsposlng said flrst substrate at the flrst posltion and sub~ectlng it to the flrst gas of a metal lnorganlc/organlc compound, whlch can react wlth at least one of H2O and 2 and form the metal oxlde under the condltlon of molecular flow, the gas pressure ln the reaction chamber ranging between 1 and several tens of mllll-Torr, for a duration of deposltlng almost a slngle atomlc layer; (c) transferrlng sald first substrate to the second position and sub~ecting the surface of a metal lnorganlc/organlc compound layer formed ln step (b) to the second gas of the at least one of H2O and 2 under the condltlon of molecular flow, the gas pressure in the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer; and (d) repeatlng the steps ~b) and (c) alternately for plural cycles untll a speclfled thlckness of the metal oxlde layer ls grown.
Accordlng to a second broad aspect, the lnventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, the devlce comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each display element comprlsing flrst and second transparent electrodes formed on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor - 7b -located at each correspondlng positlon of the dlsplay elements and having a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, gate bus llnes and source/draln bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon and the source/draln bus llne connectlng the source/draln electrodes ln the column dlrectlon and the gate and source/draln bus lines belng lnsulated from each other by an lnter-busllne lnsulatlon layer at each lntersectlon, sald manufacturlng method comprlslng the followlng steps of formlng the lnter-busllne lnsulatlon layer:
provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; deposltlng the lnter-busllne lnsulatlon layer on the gate bus llnes by a method whlch comprlses performlng a speclfled number of repeated cycles of dlsposlng the flrst substrate at the flrst posltlon and sub~ectlng lt to the - 7c -flrst gas of a metal inorganlc/organlc compound, ~lh can react wlth at least one of H2O and 2 and form the metal oxlde under the condition of molecular flow, the gas pressure in the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of depositing almost a slngle atomlc layer, and transferrlng sald flrst substrate to the second posltlon, and sub~ectlng the surface of the thus formed metal lnorganlc/organlc compound layer to the second gas of the at least one of H2O and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal inorganic/organic compound layer to the metal oxide layer; and forming the source/drain bus lines on the inter-busline insulation layer.
According to a third broad aspect, the inventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each dlsplay element comprlslng flrst and second transparent electrodes on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor located at each correspondlng posltlon of the dlsplay elements and havlng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, gate bus llnes and source/draln bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm - 7d -'~ 25307-236 translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon and the source/draln bus llne connectlng the source/draln electrodes ln the column dlrectlon, said devlce further comprlslng a protectlon layer at least on the thln fllm translstor reglon, sald manufacturlng method comprlslng the followlng steps of formlng the protectlon layer: provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; formlng the thln fllm translstors on the flrst substrate; and deposltlng the protectlon layer on the thln fllm translstors by a method whlch comprlses performlng a speclfled number of repeated cycles of dlsposlng the flrst substrate at the flrst posltlon and sub~ectlng lt to the flrst gas of a metal lnorganlc/-organlc compound, whlch can react wlth at least one of H20 and 2 to form the metal oxlde under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of deposltlng almost a slngle - 7e -atomlc layer, and transferrlng sald flrst substrate to the second posltlon, and sub~ectlng the surface of the thus formed metal lnorganlc/-organlc compound layer to the second gas of the at least one of H2O and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer.
Accordlng to a fourth broad aspect, the lnventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each dlsplay element comprlslng flrst and second transparent electrodes formed on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor located at each correspondlng posltlon of the dlsplay elements and havlng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, gate bus llnes and source/draln bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon and the source/draln bus llne connectlng the source/draln electrodes ln the column dlrectlon, sald dlsplay devlce further comprlslng an auxlllary capacltor correspondlng to each sald dlsplay element formed by the flrst transparent electrode and another auxlllary ,,, electrode formed on the first substrate, havlng a capacltor lnsulatlon layer therebetween, sald manufacturlng method comprlslng the followlng steps of formlng the capacltor lnsulatlon layer: provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the first and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrier gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second positlon ls exposed to the second gas under the condltlon of molecular flow; formlng the auxlllary electrode on the flrst substrate; deposltlng the capacltor lnsulatlon layer on the auxlllary electrode by a method whlch comprlses performlng a speclfled number of repeated cycles of dlsposlng the flrst substrate at the flrst posltlon and sub~ectlng lt to the flrst gas of a metal lnorganlc/organlc compound, whlch can react wlth at least one of H2O and 2 and form the metal oxlde under the condltlon of molecular flow, the gas pressure ln the reaction chamber ranging between 1 and several tens of milli-Torr, for a duratlon of deposltlng almost a slngle atomlc layer, and transferrlng said first substrate to the second position, and sub~ecting the surface of the thus formed metal lnorganlc/-organlc compound layer to the second gas of the at - 7g -least one of H2O and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer; and formlng the flrst transparent electrode on the capacltor lnsulatlon layer.
Accordlng to a flfth broad aspect, the lnventlon provldes a method of formlng a thln lnsulatlon layer ln an active matrlx dlsplay devlce, the lnsulatlon layer belng used as any one among a gate lnsulatlon layer for a thln fllm translstor and an insulatlon layer for an auxlllary capacltor, sald method comprlslng the steps of: (a) provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln said reactlon chamber and flowlng the flrst and second gases and the barrier gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; ~b) dlsposlng sald flrst substrate at the flrst posltlon and subiectlng lt to the flrst gas of alumlnum chlorlde under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for - 7h -~ `t ~' 25307-236 - 2011627a duratlon of deposltlng almost a slngle atomlc layer;
(c) transferrlng sald flrst substrate to the second posltlon, and sub~ectlng the surface of a thus formed alumlnum chlorlde layer to the second gas of a vapor of at least one of H20 and 2 under the condition of molecular flow, the gas pressure ln the reactlon chamber ranging between 1 and several tens of mllll-Torr, for a duratlon of replaclng the alumlnum chlorlde layer to an alumlnum oxide layer; (d) transferrlng sald flrst substrate to the flrst posltlon, and sub~ectlng the surface of the alumlnum oxlde layer to the another first gas of tltanlum chlorlde under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of deposltlng almost a slngle atomlc layer; (e) transferrlng the flrst substrate to the second posltlon, and sub~ectlng the surface of the thus formed tltanlum chloride layer to the second gas of a vapor of at least one of H20 and 2 under the same condltlon as ln step (c) for a duratlon of replaclng the tltanlum chlorlde layer to a tltanium oxlde layer; and (f) repeating the steps (b) through (e) for plural cycles untll a specifled thickness of the insulatlon layer ls grown.
Accordlng to a slxth broad aspect, the lnventlon provides a method of forming a thin film translstor on a substrate comprlslng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and drain electrodes, wherein sald method comprlses performlng the followlng steps of formlng the gate insulatlon layer: (a) providing a reactlon chamber comprlslng flrst and second gas lnlets and a barrler - 7i -gas inlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes said first and second positions, and such that the substrate at the flrst posltlon is exposed to the first gas and the substrate at the second posltion ls exposed to the second gas under the conditlon of molecular flow; (b) dlsposing sald first substrate at the first position and sub~ecting it to the first gas of a metal inorganic/organic compound, which can react wlth at least one of H20 and 2 and form the metal oxlde under the conditlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of deposltlng almost a slngle atomlc layer; (c) transferrlng sald flrst substrate to the second posltlon and sub~ectlng the surface of a metal lnorganic/organic compound layer formed ln step (b) to the second gas of the at least one of H20 and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranging between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer; and (d) repeatlng the steps (b) and (c) alternately for plural cycles untll a speclfled thlckness of the metal oxlde layer ls grown.
20~ 27 Details of other modifications will become clear from a reading of the detailed description of the invention with reference to the drawings.
BRIEF DR-~CRTPTION OF TEE DRAWqNGS
Figure 1 shows a partial eguivalent circuit of an active matrix display device for explaining a general concept of the device structure;
Figure 2 shows an enlarged top view of a first substrate around a TFT forming region of an active matrix display device in accordance with the present invention;
Figure 3 is a cross sections along line I-I of Figure 2;
Figure 4 is a cross sections along line II-II of Figure 2;
Figure 5 shows schematically an apparatus for growing an insulation layer by the ALE method in accordance with the present invention;
Figures 6(a) and 6(b) show test results on withstanding voltage between gate electrode and source/drain electrode of a TFT, wherein Figure 6(a) shows the data obtained for the TFTs comprising the gate insulation layer formed in accordance with the present invention and Figure 6(b) shows the data for the TFTs produced by the existing known technology;
Figure 7 is a graph showing the test results on a 2 ~ 7 relation between vapor pressure inside a reaction chamber and the number of defects per unit area of an insulation layer when gas flow conditions in the ALE apparatus of Figure 5 are changed;
Figure 8 shows an equivalent circuit of an active matrix display device, wherein an auxiliary capacitor is formed at each position of display elements;
Figures 9ta) and 9(b) show a cross section of a substrate for two types when an auxiliary capacitor is formed by the ALE method in accordance with the present invention; and Figures lO~a) through lO(d) show a cross section of a substrate at successive steps in forming an auxiliary capacitor and a TFT by the ALE method of the present invention.
Same or like reference numerals designate same or corresponding parts throughout the drawings.
Dl~TATT.RI- DESCRIPTION OF TEIE PREFERRI~) EMBODIMENTS
Figure 1 shows a partial equivalent circuit of an active matrix display device for explaining a general concept of the device structure. A plurality of display elements DE are arranged in rows and columns comprising a first transparent electrode E formed on a first substrate and a second transparent electrode E' on a second substrate and light influencing material such as liquid crystal 2Q~162~
therebetween. A plurality of thin film transistors (TFTs) are formed on the first substrate at each corresponding position of the display elements DE. Each TFT comprises gate electrode G, source electrode S and drain electrode D.
A plurality of gate bus lines GB are formed on the first substrate connecting gate electrodes G in the row direction and a plurality of drain bus lines are also formed on the first substrate connecting drain electrodes D in the column direction, the drain bus lines DB being insulated from the gate bus lines GB.
Figure 2 shows an enlarged top view of a first substrate 1 around a TFT forming region, and Figures 3 and 4 are cross sections along lines I-I and II-II respectively of Figure 2.
A manufacturing method of forming a gate insulation layer and inter-busline insulation layer in accordance with the present invention is explained using these Figures 2 to 4. On the transparent substrate 1 of an insulating material such as glass, a titanium layer is deposited and patterned, resulting in forming gate electrodes G in Figure 3. Thereby a lower layer 11 of gate bus lines GB of Figure 4 is formed at the same time. On the lower layer 11 of the gate bus lines GB, an upper layer 12 of aluminum is further deposited and patterned. The aluminum layer 12 of gate bus lines may be deposited and patterned before the titanium deposition for gate 2 0 ~ h 7 electrodes G.
Next, an insulation layer 2 including a lower layer 21 and an upper layer 22, is formed on an entire ~surface of the substrate 1. In the TFT region, it is used as a gate insulation layer 2 in Figure 3. At crossing points of the gate bus lines GB with drain bus lines DB in Figure 4, the insulation layer 2 is used as constituent layer of an inter-busline insulation layer 8. The existing technology generally utilizes silicon oxide (SiO2) as the material of the lower insulation layer 21. However, in the present invention, the lower insulation layer 21 is of aluminum oxide (alumina, A1203) and formed by the ALE
method, and the upper insulation layer 22 may be either of silicon nitride (SiN) formed by a plasma CVD method, or of aluminum nitride (AlN) formed by the ALE method. However, the use of silicon nitride (SiN) by the plasma CVD method is more advantageous because the subsequent deposition of amorphous silicon can be performed using the same plasma CVD apparatus without interruption.
Herein, the ALE method used in the present invention is first explained. The A1203 insulation layer 21 deposited by the ALE method can be obtained using an apparatus which is schematically shown in Figure 5.
Hereinafter, the apparatus of this type is called conveniently ALE apparatus. The apparatus comprises a reaction chamber 30 of a fan-shaped type, which is 2 0 1 ~ ~ hl 7 exhausted by a turbo-molecular pump Vp and the pressure in which is controlled by an orifice valve OF. At the middle portion of the arc-shaped fringe, a gas inlet Nc is provided which spouts argon (Ar) gas into the reaction chamber 30. The direction of Ar gas flow is substantially coincident with the center line of the reaction chamber.
The Ar gas flow forms a gas barrier 31 dividing the reaction chamber 30 into two. On both sides of the gas barrier 31, a pair of gas inlets Na and Nb are provided.
Source gases are supplied into the reaction chamber 30 from these gas inlets Na and Nb. A substrate W, a thin film being deposited thereon, moves back and forth as shown by an arrow from a first position in region 32 to a second position in region 33 and vice versa. The region 32 is solely under the influence of the gas from the inlet Na, and the region 33, the gas from the inlet Nb.
Next, a method of forming a thin A12O3 layer using the ALE apparatus is explained. A substrate is mounted on a stage (not shown) which can move from region 32 to region 33, and is heated to 300C. The reaction chamber is exhausted to a vacuum degree of about 5 x 10 7 Torr by the turbo-molecular pump Vp. A valve V0 is opened and Ar gas is made to flow into the reaction chamber through the inlet Nc at a flow rate of about 500 sccm, the flow rate being controlled by a mass flow controller (not shown). Further, the orifice valve OF is controlled to .
maintain the pressure inside the reaction chamber 30 at about 0.01 Torr.
Next another valve Vl is opened and Ar gas is made to flow through a bubbling cylinder 35 of aluminum chloride (AlC13) and further through the inlet Na. Because the bubbling cylinder 35 is heated to about 110C, aluminum chloride vapor is introduced in the region 32.
Next, another valve V2 is opened and water (H2O) vapor and/or oxygen (2) gas from a bubbling cylinder (not shown) which is maintained at a temperature of 20C is introduced with argon gas into the region 33 of the reaction chamber 30. The aluminum chloride gas in the region 32 will not mix with the water vapor in the region 33, because the argon gas barrier 31 prevents the mixing of these two gases. The vapor or gas pressure in the reaction chamber 30 during the process is always maintained at about 0.01 Torr.
Providing the above gas flow conditions for the ALE apparatus, the substrate 1 is moved from region 32 to region 33 and further back to region 32 with a period of about 3 seconds. During the first half of the period, an aluminum chloride layer is deposited with a thickness of substantially equal to or less than a single atomic layer, and during the second half of the period, the aluminum chloride (AlC13) layer is converted to an aluminum oxide (A12O3) layer due to the following chemical reaction.
20~ i27 -3 3H2O ===> A12O3 + 6HCl The above movement is repeated about 6,000 times, which results in forming the thin aluminum oxide layer 21 having a thickness of approx. 4,000 A.
Returning to the explanation on Figures 2 through 4, the upper insulation layer 22 of silicon nitride (SiN) is formed on the aluminum oxide layer 21 using a plasma CVD
apparatus. The thin silicon nitride layer 22 has a thickness of about 200 A and is formed with the object of improving an interface condition with an amorphous silicon semiconductor layer 3, which is to be deposited immediately after the formation of the silicon nitride layer 22 using the same plasma CVD apparatus.
The silicon nitride layer 22 and the amorphous silicon layer 3, both layers being formed by the same plasma CVD apparatus without interruption, contribute to improve electrical characteristics due to the interface condition between two layers and to prevent an abnormal circular growth of amorphous silicon, which is often observed when the amorphous silicon is directly deposited on the aluminum oxide layer 21.
In the embodiment, the gate insulation layer 2 is a double layer of the aluminum oxide layer 21 and silicon nitride layer 22. This double layer is simultaneously formed on the gate bus line GB of Figure 4 as constituent layers of an inter-busline insulation layer 8. However, -the silicon nitride layer 22 and other layers such as amorphous silicon layer 3 and silicon oxide layer 6 in Figure 4 are required for the TFT only. Therefore, if the inter-busline insulation layer 8 is formed separately by independent processes, the inter-busline insulation layer may be a single layer of the aluminum oxide layer 21.
After forming the silicon nitride layer 22, the amorphous silicon layer 3 and a silicon oxide (SiO2) layer 6 are continously deposited on the entire surface of the substrate using the same plasma CVD apparatus. There is no need of taking the substrate out of the apparatus during these processes.
In the TFT region, the amorphous silicon layer 3 and silicon oxide layer 6 are patterned, and thereafter, a contact layer 4 of doped amorphous silicon (n+ a-Si:H) 4 and a source electrode S and a drain electrode D, both being of titanium, are formed.
In Figures 3 and 4, a chromium (Cr) layer 41 and an aluminum layer 42 are deposited and patterned, resulting in connecting a plurality of drain electrodes D in the column direction and forming drain bus lines DB on the silicon oxide layer 6. A display electrode E of thin transparent indium tin oxide (ITO) film is also formed on the silicon nitride layer 22 and patterned having a connection to each source electrode S.
The method of forming an insulation layer in accordance with the present invention can be applied for forming another insulation layer i.e. a protection layer formed on an entire surface of the substrate 1. The protection layer 7 is of aluminum oxide and is formed by the same ALE method. In forming the protection layer 7, in which the TFT is already formed on the substrate, the substrate temperature can not be raised up to the temperature used in the forming the A12O3 layer 21 previously applied. Excess temperature deteriorates voltage-current characteristics of the TFT and makes a switching voltage thereof to increase. Existing methods of forming silicon nitride layer or silicon oxide layer utilize the known plasma CVD method, in which a growth temperature is forcibly reduced to an enough low temperature, has a drawback of inferior density of the deposited layer and is unsatisfactory for protecting the TFT.
In this embodiment, the substrate is maintained at a temperature as low as 200C. In the similar way, the substrate is exposed to the aluminum chloride vapor and the water vapor alternately in the ALE apparatus. The similar process is repeated for 6,000 cycles with the result of obtaining the aluminum oxide (A12O3) layer of 4,000 A
thickness. When the formation of the protection layer 7 is finished, all processes for the first substrate 1 is completed.
- 2011~27 The embodied substrate of the active matrix display device in accordance with the present invention comprises the gate insulation layer 2, inter-busline insulation layer 8 and protection layer 7 grown by the ALE
method. These insulation layers are high in density and have a close adhesion characteristic to the lower underlying layer and good coverage over the steps of the underlying layer and a high insulation characteristic.
Further, the protection layer 7 is formed at the sufficient low temperature, therefore, the TFT formed on the substrate shows no deterioration in characteristic and the switching voltage thereof is very low.
For example, Figures 6(a) and 6(b) show test results of withstanding voltage between the gate electrode and source/drain electrode of the TFT. Figure 6(a) shows the data obtained for the TFTs comprising the gate insulation layer applying the present invention. Figure 6(b) shows the data for the TFTs produced by the conventional CVD technology. In both Figures, the abscissa shows the applied voltage and the ordinate shows the number of gate bus lines GB having a defect in percentage, the defect being caused by any one of TFTs having a break down (can not withstand the applied voltage within a specified range) connected in the row direction. The data show that, when the gate insulation layer is formed in accordance with the present invention, there is no defect of TFTs in the 2011~27 -range less than 100 volts of withstanding voltage.
Figure 7 shows the relation between the vapor pressure inside the reaction chamber and the number of defects per unit area of an insulation layer, and two curves in Figure 7 are measured by changing a parameter r, which is the ratio of flow rate of barrier gas to total flow rate of source gases. As can be seen from Figure 7, the lower the vapor pressure is, the less the number of defects is. This means that a magnitude of the mean free path of source gas molecules will affect the quality of the formed insulation layer. According to the present invention, the vapor flow in the reaction chamber is preferable to be under the condition of molecular flow.
Under this condition, the mean free path of the gas molecules is long enough and very few of gas molecules flying toward the substrate collide with other molecules and there is very little chance to form a cluster of gas molecules. As a result, the deposition on the substraLe is uniform and there is no nucleus for an abnormal growth of molecules on the substrate. The deposited layer has a good adhesion characteristic to the lower underlying layer and is flawless.
When the vapor pressure is decreased to 0.01 Torr, the number of defects is improved three orders smaller than the number at vapor pressure of 1 Torr.
However, it is impractical to use vapor pressure of less 20~ ~ ~27 than 0.001 Torr, because the growth rate of the deposited layer becomes too low. Therefore, it is preferable to use 1 to several tens of milli Torr in the present invention.
Further, Figure 7 also shows that the larger the parameter r is, the less the number of defects is. This demonstrates that the barrier gas 31 in Figure 5 plays an important role to prevent the mixture of two source gases in regions 32 and 33.
In the embodiments in forming aluminum oxide layer by the ALE method, an aluminum chloride gas (AlC13) is utilized as a first source gas. Other inorganic/organic aluminum compound gases such as aluminum bromide (AlBr3), organoaluminum compound such as trimethylaluminum [Al(CH3)3] and triethylaluminum [Al(C2H5)3], and organoaluminum chloride such as dimethylaluminum chloride [Al(CH3)2Cl] and diethylaluminum chloride [Al(C2H5)2Cl] may be used as the source gas.
When the first source gas (AlC13) is changed to titanium chloride gas (TiC14 or TiC13) or titanium bromide (TiBr4) gas and a substrate is subjected to the similar steps as explained with regard to Figure 5, an insulation layer of titanium oxide (TiO2) can be grown on the substrate. TiO2 has a larger dielectric constant than that of A1203. When a TiO2 layer is used for the gate insulation layer, a switching voltage of the TFT can be decreased.
20~27 If the ALE growth of A12O3 and the ALE growth of TiO2 are repeated alternately, each growth being substantially equivalent to or less than a single atomic layer growth, a composite insulation layer of A12O3 and TiO2 can be obtained, which has a larger dielectric constant than that of A12O3 and a higher insulation characteristic than that of TiO2. The growth of the composite layer can be performed by changing the source gas from aluminum chloride to titanium chloride gas source alternately, whereby the latter gas source is additionally provided and connected to the valve Vl in Figure 5.
In the previous explanation for forming the gate insulation layer 2, a silicon nitride layer is used as the upper insulation layer 22. Replacing the silicon nitride layer, an aluminum nitride tAlN) layer can be used as the upper insulation layer. The ALE apparatus of Figure S can be used for growing the AlN layer. When the source gas supplied to the valve V2 is changed to an ammonia (NH3) gas source and other gas supply arrangements and processes are the same as previously explained, the aluminum nitride layer can be grown.
In order to improve picture quality of an active matrix display device, it is known that an auxiliary capacitor is effective, which is provided at each position of display elements and is inserted in parallel with the display element.
2~ h7 Figure 8 shows an equivalent circuit of this type of a display device. When Figure 8 is compared with the conventional equivalent circuit of Figure 1, it is seen that an auxiliary capacitor Cs is added. A first capacitor electrode is connected to a first transparent display electrode E, and a second capacitor electrode is connected to an earth bus line EB which connects a plurality of second capacitor electrodes in the row direction on a substrate. In an actual design, the first display electrode E is used in common as the first capacitor electrode, and the earth bus line EB is formed separately on the substrate and a portion thereof is used as the second capacitor electrode. These two capacitor electrodes and a capacitor insulation layer therebetween forms the capacitor Cs. The earth bus lines EB are separately formed on the substrate, because these lines are to be insulated from qate bus lines GB and drain bus lines DB on the substrate.
Figures 9(a), 9(b) and lO(d) show a cross section of substrates with capacitor Cs and TFT for three different types. In Figure 9(a), a gate electrode G and a second capacitor electrode EB (earth bus line) are formed directly on a substrate 1. A gate insulation layer 2 is used in common as a capacitor insulation layer 9.
In Figure 9~b), a second capacitor electrode EB
is first formed on a substrate 1, however, a gate electrode 2 0 ~ 7 G is formed on a capacitor insulation layer 9. A
transparent display electrode E iS also formed on the capacitor insulation layer 9.
In Figure 10~d), a transparent display electrode E iS formed on a double layer 9 of first and second insulation layers 91 and 92. This type eliminates an additional process of forming a connector 10 used in Figure 9(b).
Generally, the second capacitor electrodes EB
(earth bus lines) are made of indium tin oxide (ITO), because electrodes EB are required to be tran-sparent. ITO
has rather a high resistivity as an electrical conductor, therefore, the thickness of the earth bus lines EB are preferable to be larger in order to reduce the resistance thereof.
With regard to the structure of Figure 9(a), the earth bus lines EB should be formed with stripe pattern, each earth bus line running in the row direction and being connected with other bus lines at the end portion. This is because the earth bus line EB can not cross gate bus lines formed on the same level. Therefore, the electrical resistance of each earth bus line EB can not be reduced to a sufficient low level. On the other hand, earth bus lines of Figures 9(b) and 10(d) are formed on the lower level independently on the substrate. There is no grade crossing with gate bus lines. The earth bus lines EB can be 2 ~ 7 connected in both row and column directions, resulting in sufficient reduction of electrical resistance of all earth bus lines EB.
The capacitor insulation layers 9 used in Figures 9(a), 9(b) and lO(d) are required to have a good covering effect over steps formed by underlying layer surface and to have a high density as the insulation material and further preferably to have no flaw in the insulation layer.
The method of forming insulation layer in accordance with the present invention meet well these requirements. In forming the capacitor insulation layer 9 of Figure 9(a), the gate insulation layer 2 of aluminum oxide layer 21 and silicon nitride layer 22 of Figure 3, can be used therefor without change. The capacitor insulation layer 9 of Figure 9(b) is of aluminum oxide (A1203) layer and can be formed utilizing the same method as used in forming the aluminum oxide layer 21 of Figures 3 and 4.
An example of manufacturing processes of the auxiliary capacitor is explained using Figures lO(a) through lO(d). An earth bus line EB (second capacitor electrode) of ITO is deposited on a substrate 1 and patterned as shown in Figure lO(a). Utilizing the ALE
method of the present invention, an aluminum oxide (A1203) thin layer 91 (capacitor insulation layer) is grown until the thickness of 4,000 A can be obtained as shown in Figure 201~7 lO(b). In Figure lO(c), a gate electrode G of titanium having a thickness of about 800 A and gate bus lines (not shown) are formed on the aluminum oxide layer 91.
Thereafter, the surface of the substrate is subjected to an oxygen (2) plasma process, which has effects of removing remainder of resist material and oxidizing titanium surface of the gate electrode G.
In Figure lO(d), a gate insulation layer 2 and a second capacitor insulation layer 92 are formed on the substrate of Figure lO(c). These insulation layers are of a double layer of silicon oxide (SiO2) of about 1,000 A in thickness and silicon nitride (SiN) of about 2,000 A in thickness. The double insulation layer 92 and the aluminum oxide layer 91 in the capacitor forming region form the capacitor insulation layer 9. An amorphous silicon (a-Si:H) layer 3 of about 150 A in thickness and a silicon oxide or nitride (SiO2 or SiN) layer 6 of about 1,400 A in thickness are deposited by a plasma CVD method and patterned. The growth processes of the double insulation layer 2 and 92, amorphous silicon layer 3 and silicon oxide layer 6 can be performed continously using the same plasma CVD apparatus, during which the substrate does not need to be taken out of the apparatus.
Further, a doped amorphous silicon (n a-Si:H) layer 4, and source and drain electrodes S and D of titanium are deposited and patterned, with a result of 2~116~7 forming a TFT. Finally, a display electrode E of ITO is formed on the insulation layer 9.
The auxiliary capacitor Cs in the active matrix display device of the present invention comprises at least an aluminum oxide layer in the capacitor insulation layer 9, the aluminum oxide layer being formed by the ALE method of the present invention. Even when the earth bus line EB
has enough thickness with steep steps, the capacitor insulation layer shows a high insulation characteristic, which reduces defects due to current leakage between capacitor electrodes.
The method can be embodied in other capacitor structures of display devices than those described above.
In the embodiments, an insulation layer manufactured by the ALE method of the present invention is applied for forming gate insulation layer, inter-busline insulation layer, protection layer and capacitor insulation layer in the active matrix display device. The present invention may be embodied in other specific types without departing from the spirit or essential characteristics thereof.
The disclosed embodiments have the structures such that gate electrode is first formed on a substrate and that insulation layer, active semiconductor layer, and source and drain electrodes are subsequently formed in this order (called conventionally inverted staggered type), 2 ~ 2 7 , however, the present invention may be embodied in a normal type (staggered type) active matrix display device, in which the above deposition sequence is inverted.
Further, this invention may be embodied in an active matrix display device for forming a gate insulation layer, wherein gate bus lines and data bus lines are separately formed on first and second substrates respectively and each drain electrode is connected to an adjacent gate bus line. This type of the display device is disclosed in U.S. Patent No. 4,818,981 issued on April 4, 1989 by the same Applicant.
The presently disclosed embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims, rather than the foregoing description, and all changes which come within the meaning and range of equivalence of the claims are, therefore, to be embraced therein.
An insulation layer in accordance with the present invention is superior in quality and has very few defects. The steps of the underlying surface are well covered by the formed insulation layer. Further, the insulation layer can be formed at comparatively low temperatures. Active matrix display devices manufactured in accordance with the present invention show a high reliability, a high withstanding voltage, and a high - ~ 201~ ~27 picture quality.
Thus insulation iayers are needed at different portions of the display device structure and are formed at different phases in fabrication. In active matrix display devices having TFTs, materials such as indium tin oxide (abbreviated as ITO), amorphous silicon and aluminum are utilized. These materials re~uire process temperatures as low as possible during the processes. Therefore, insulation layers are preferably deposited at low substrate temperatures which will not cause bad effects on the grown material. A plasma CVD method is known as a low temperature CVD process and is widely used in manufacturing active matrix display devices.
` In forming the TFT, for example, a metal layer is first deposited on a substrate and is patterned, with a result of forming a gate electrode. A gate insulation layer is next formed thereon. The gate insulation layer is of silicon nitride (SiNX) or silicon oxynitride (SiON), and 20~1~27 is formed on the substrate by the plasma CVD method, in which the substrate temperature is maintained at around 350C. Thereafter, an amorphous silicon ~a-Si:H) is deposited on the surface of the gate insulation layer using the same plasma CVD apparatus without a break of vacuum, only source gases being changed. After patterning the amorphous silicon layer, source and drain electrodes are formed thereon, thus the TFTs are formed on the substrate.
In a similar way, an inter-busline insulation layer, which insulates gate bus lines from drain (or source) bus lines, is formed by the plasma CVD method.
Sometimes, the inter-busline insulation layer is formed simultaneously with the forming step of gate insulation layer using the same plasma CVD apparatus.
The substrate (first substrate) is sealed with another opposite (second) substrate at the final stage of display device fabrication, and light influencing material such as liquid crystal is sealed between two substrates.
Therefore, another insulation layer is necessary in order to protect amorphous silicon (a-Si:H) portions on the first substrate before the sealing process. The protection (insulation) layer is deposited at least on the TFT
portions in the similar way.
In order to improve picture quality of active matrix display devices, it is known that an auxiliary capacitor is formed in the display device arranged at each corresponding position to the display elements. In this case, a transparent electrode of the display element connected to the source electrode of the TFT is utilized as a first electrode of the auxiliary capacitor, and either an extended portion of the adjacent gate bus line or a separately formed earth bus line is utilized as a second capaci~or electrode, thereby a capacitor insulation layer being formed between these two electrodes of the auxiliary capacitor.
Existing four kinds of insulation layers such as gate insulation layer, inter-busline insulation layer, protection layer and capacitor insulation layer, which are generally formed by the known plasma CVD method at low temperatures, have essentially a drawback of poor covering capability when deposited on the substrate surface having steps. The formed insulation layer is weak in mechanical strength and easily forms cracks, resulting in decreasing a withstanding voltage and an insulation resistance of the insulation layer.
~ eplacing the existing plasma CVD method, other CVD methods having a different idea of deposition are disclosed in the following patents:
U.S. Pat. No. 4,058,430 issued on Nov. 15, 1977 to Tuomo Suntola etal. entitled "Method for producing compound thin films";
U.S. Pat. No. 4,486,487 issued on Dec. 4, 1984 to 201 ~ 6~7 , Jarmo I. Skarp entitled "Combination film, in particular for thin film electroluminescent structures"; and U.S. Pat. No. 4,389,973 issued on Jan. 28, 1983 to Tuomo S. Santola etal. entitled "Apparatus for performing growth of compound thin filmsn.
The principle of the above disclosures is to utilize in common the so-called "atomic layer epitaxy"
method which is abbreviated as "ALE" method.
The method of Pat. No. 4,058,430 comprises the steps of subjecting the substrate to the vapor of a first kind of element forming a single atomic layer, and subjecting thus formed surface of the single atomic layer to the vapor of a second kind of element which can react with the first element resulting in forming a single layer of compound of first and second elements. These steps are repeated until a desired thickness can be obtained. The method discloses formation of thin films of light emitting semiconductor or resistance layers.
Pat. No. 4,486,487 discloses a method of forming a combination film of aluminum oxide and titanium oxide utilizing the ALE method.
Pat. No. 4,389,973 discloses a method and an apparatus for forming a compound thin films such as tantalum oxide, zinc sulphide and aluminum oxide by the ALE
method emphasizing the apparatus used therefor.
201~627 .
S~ARY OF T~E INV~N1 10N
It is a general object of the invention, therefore to provide a method of manufacturing an active matrix display device using the insulation layer, which is grown by the ALE method and is strong against electrical breakdown and has almost no defects such as cracks and pinholes.
It is a more specific object of the invention to provide a method of manufacturing an active matrix display device, wherein a gate insulation layer of thin film transistor of the display device is formed of the insulation layer grown by the ALE method.
It is another object of the invention to provide a method of manufacturing an active matrix display device, wherein a inter-busline insulation layer of the display device is formed of the insulation layer grown by the ALE
method.
It is still another object of the invention to provide a method of manufacturing an active matrix display device, wherein a protection layer covering thin film transistor of the display device is rormed of the insulation layer grown by the ALE method.
It is further object of the invention to provide a method of manufacturing an active matrix display device, wherein auxiliary capacitor is formed to each display element and a capacitor insulation layer thereof is formed 2~ S27 of the insulation layer grown by the ALE method.
It is still a further object of the invention to provide a method of forming a composite insulation layer comprising different composition layers formed by the ALE method.
It is still a further object of the invention to provide a method of forming a thin film transistor, wherein an amorphous silicon is used as an active semiconductor layer and the insulation layer formed by the ALE method is used as a gate insulation layer.
The above objects are achieved by the method of form-ing the insulation layer in accordance with the present invention, the method comprising a predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H2O and/or 2 and form the metal oxide, under molecular flow condition for the duration of depositing almost a single atomic layer, and next subjecting the surface of the thus formed metal inorganic/organic compound layer to the H2O vapor and/or 2 gas under molecular flow condition for the duration of replacing the metal inorganic/organic compound layer to the metal oxide layer.
When aluminum or titanium compounds are used as the metal inorganic/organic compound, aluminum oxide or titanium oxide layers respectively is grown as the insulation layer.
Accordlng to a flrst broad aspect, the lnventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each dlsplay element comprlslng flrst and second transparent electrodes formed on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor located at each correspondlng posltlon of the dlsplay elements and havlng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, and at least gate bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon, sald manufacturlng method comprlslng the steps of formlng the gate lnsulatlon layer of the thln fllm translstor, namely: (a) provldlng a reactlon chamber comprl-slng an lnlet for a flrst gas and an lnlet for a second gas and an lnlet for a barrler gas, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed - 7a -..~
to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; (b) dlsposlng said flrst substrate at the flrst posltion and sub~ectlng it to the flrst gas of a metal lnorganlc/organlc compound, whlch can react wlth at least one of H2O and 2 and form the metal oxlde under the condltlon of molecular flow, the gas pressure ln the reaction chamber ranging between 1 and several tens of mllll-Torr, for a duration of deposltlng almost a slngle atomlc layer; (c) transferrlng sald first substrate to the second position and sub~ecting the surface of a metal lnorganlc/organlc compound layer formed ln step (b) to the second gas of the at least one of H2O and 2 under the condltlon of molecular flow, the gas pressure in the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer; and (d) repeatlng the steps ~b) and (c) alternately for plural cycles untll a speclfled thlckness of the metal oxlde layer ls grown.
Accordlng to a second broad aspect, the lnventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, the devlce comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each display element comprlsing flrst and second transparent electrodes formed on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor - 7b -located at each correspondlng positlon of the dlsplay elements and having a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, gate bus llnes and source/draln bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon and the source/draln bus llne connectlng the source/draln electrodes ln the column dlrectlon and the gate and source/draln bus lines belng lnsulated from each other by an lnter-busllne lnsulatlon layer at each lntersectlon, sald manufacturlng method comprlslng the followlng steps of formlng the lnter-busllne lnsulatlon layer:
provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; deposltlng the lnter-busllne lnsulatlon layer on the gate bus llnes by a method whlch comprlses performlng a speclfled number of repeated cycles of dlsposlng the flrst substrate at the flrst posltlon and sub~ectlng lt to the - 7c -flrst gas of a metal inorganlc/organlc compound, ~lh can react wlth at least one of H2O and 2 and form the metal oxlde under the condition of molecular flow, the gas pressure in the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of depositing almost a slngle atomlc layer, and transferrlng sald flrst substrate to the second posltlon, and sub~ectlng the surface of the thus formed metal lnorganlc/organlc compound layer to the second gas of the at least one of H2O and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal inorganic/organic compound layer to the metal oxide layer; and forming the source/drain bus lines on the inter-busline insulation layer.
According to a third broad aspect, the inventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each dlsplay element comprlslng flrst and second transparent electrodes on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor located at each correspondlng posltlon of the dlsplay elements and havlng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, gate bus llnes and source/draln bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm - 7d -'~ 25307-236 translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon and the source/draln bus llne connectlng the source/draln electrodes ln the column dlrectlon, said devlce further comprlslng a protectlon layer at least on the thln fllm translstor reglon, sald manufacturlng method comprlslng the followlng steps of formlng the protectlon layer: provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; formlng the thln fllm translstors on the flrst substrate; and deposltlng the protectlon layer on the thln fllm translstors by a method whlch comprlses performlng a speclfled number of repeated cycles of dlsposlng the flrst substrate at the flrst posltlon and sub~ectlng lt to the flrst gas of a metal lnorganlc/-organlc compound, whlch can react wlth at least one of H20 and 2 to form the metal oxlde under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of deposltlng almost a slngle - 7e -atomlc layer, and transferrlng sald flrst substrate to the second posltlon, and sub~ectlng the surface of the thus formed metal lnorganlc/-organlc compound layer to the second gas of the at least one of H2O and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer.
Accordlng to a fourth broad aspect, the lnventlon provldes a method of manufacturlng an actlve matrlx dlsplay devlce, comprlslng flrst and second substrates formlng an enclosure, a plurallty of dlsplay elements arranged ln rows and columns, each dlsplay element comprlslng flrst and second transparent electrodes formed on lnslde surfaces of the flrst and second substrates respectlvely and llght lnfluenclng materlal therebetween, a plurallty of thln fllm translstors formed on the flrst substrate, the thln fllm translstor located at each correspondlng posltlon of the dlsplay elements and havlng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and draln electrodes, gate bus llnes and source/draln bus llnes formed on the flrst substrate for drlvlng the dlsplay elements through the thln fllm translstors, the gate bus llne connectlng the gate electrodes located ln the row dlrectlon and the source/draln bus llne connectlng the source/draln electrodes ln the column dlrectlon, sald dlsplay devlce further comprlslng an auxlllary capacltor correspondlng to each sald dlsplay element formed by the flrst transparent electrode and another auxlllary ,,, electrode formed on the first substrate, havlng a capacltor lnsulatlon layer therebetween, sald manufacturlng method comprlslng the followlng steps of formlng the capacltor lnsulatlon layer: provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the first and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrier gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second positlon ls exposed to the second gas under the condltlon of molecular flow; formlng the auxlllary electrode on the flrst substrate; deposltlng the capacltor lnsulatlon layer on the auxlllary electrode by a method whlch comprlses performlng a speclfled number of repeated cycles of dlsposlng the flrst substrate at the flrst posltlon and sub~ectlng lt to the flrst gas of a metal lnorganlc/organlc compound, whlch can react wlth at least one of H2O and 2 and form the metal oxlde under the condltlon of molecular flow, the gas pressure ln the reaction chamber ranging between 1 and several tens of milli-Torr, for a duratlon of deposltlng almost a slngle atomlc layer, and transferrlng said first substrate to the second position, and sub~ecting the surface of the thus formed metal lnorganlc/-organlc compound layer to the second gas of the at - 7g -least one of H2O and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer; and formlng the flrst transparent electrode on the capacltor lnsulatlon layer.
Accordlng to a flfth broad aspect, the lnventlon provldes a method of formlng a thln lnsulatlon layer ln an active matrlx dlsplay devlce, the lnsulatlon layer belng used as any one among a gate lnsulatlon layer for a thln fllm translstor and an insulatlon layer for an auxlllary capacltor, sald method comprlslng the steps of: (a) provldlng a reactlon chamber comprlslng flrst and second gas lnlets and a barrler gas lnlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln said reactlon chamber and flowlng the flrst and second gases and the barrier gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes sald flrst and second posltlons, and such that the substrate at the flrst posltlon ls exposed to the flrst gas and the substrate at the second posltlon ls exposed to the second gas under the condltlon of molecular flow; ~b) dlsposlng sald flrst substrate at the flrst posltlon and subiectlng lt to the flrst gas of alumlnum chlorlde under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for - 7h -~ `t ~' 25307-236 - 2011627a duratlon of deposltlng almost a slngle atomlc layer;
(c) transferrlng sald flrst substrate to the second posltlon, and sub~ectlng the surface of a thus formed alumlnum chlorlde layer to the second gas of a vapor of at least one of H20 and 2 under the condition of molecular flow, the gas pressure ln the reactlon chamber ranging between 1 and several tens of mllll-Torr, for a duratlon of replaclng the alumlnum chlorlde layer to an alumlnum oxide layer; (d) transferrlng sald flrst substrate to the flrst posltlon, and sub~ectlng the surface of the alumlnum oxlde layer to the another first gas of tltanlum chlorlde under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of deposltlng almost a slngle atomlc layer; (e) transferrlng the flrst substrate to the second posltlon, and sub~ectlng the surface of the thus formed tltanlum chloride layer to the second gas of a vapor of at least one of H20 and 2 under the same condltlon as ln step (c) for a duratlon of replaclng the tltanlum chlorlde layer to a tltanium oxlde layer; and (f) repeating the steps (b) through (e) for plural cycles untll a specifled thickness of the insulatlon layer ls grown.
Accordlng to a slxth broad aspect, the lnventlon provides a method of forming a thin film translstor on a substrate comprlslng a gate electrode, a gate lnsulatlon layer, a semlconductor layer, and source and drain electrodes, wherein sald method comprlses performlng the followlng steps of formlng the gate insulatlon layer: (a) providing a reactlon chamber comprlslng flrst and second gas lnlets and a barrler - 7i -gas inlet, an outlet for exhaustlng these gases and means for transferrlng a substrate between flrst and second posltlons wlthln sald reactlon chamber and flowlng the flrst and second gases and the barrler gas, whereln the flrst and second gas lnlets and the barrler gas lnlet and the gas outlet are arranged such that only the barrler gas flow separates the flrst and second gases under a condltlon of molecular flow and deflnes said first and second positions, and such that the substrate at the flrst posltlon is exposed to the first gas and the substrate at the second posltion ls exposed to the second gas under the conditlon of molecular flow; (b) dlsposing sald first substrate at the first position and sub~ecting it to the first gas of a metal inorganic/organic compound, which can react wlth at least one of H20 and 2 and form the metal oxlde under the conditlon of molecular flow, the gas pressure ln the reactlon chamber ranglng between 1 and several tens of mllll-Torr, for a duratlon of deposltlng almost a slngle atomlc layer; (c) transferrlng sald flrst substrate to the second posltlon and sub~ectlng the surface of a metal lnorganic/organic compound layer formed ln step (b) to the second gas of the at least one of H20 and 2 under the condltlon of molecular flow, the gas pressure ln the reactlon chamber ranging between 1 and several tens of mllll-Torr, for a duratlon of replaclng the metal lnorganlc/organlc compound layer to the metal oxlde layer; and (d) repeatlng the steps (b) and (c) alternately for plural cycles untll a speclfled thlckness of the metal oxlde layer ls grown.
20~ 27 Details of other modifications will become clear from a reading of the detailed description of the invention with reference to the drawings.
BRIEF DR-~CRTPTION OF TEE DRAWqNGS
Figure 1 shows a partial eguivalent circuit of an active matrix display device for explaining a general concept of the device structure;
Figure 2 shows an enlarged top view of a first substrate around a TFT forming region of an active matrix display device in accordance with the present invention;
Figure 3 is a cross sections along line I-I of Figure 2;
Figure 4 is a cross sections along line II-II of Figure 2;
Figure 5 shows schematically an apparatus for growing an insulation layer by the ALE method in accordance with the present invention;
Figures 6(a) and 6(b) show test results on withstanding voltage between gate electrode and source/drain electrode of a TFT, wherein Figure 6(a) shows the data obtained for the TFTs comprising the gate insulation layer formed in accordance with the present invention and Figure 6(b) shows the data for the TFTs produced by the existing known technology;
Figure 7 is a graph showing the test results on a 2 ~ 7 relation between vapor pressure inside a reaction chamber and the number of defects per unit area of an insulation layer when gas flow conditions in the ALE apparatus of Figure 5 are changed;
Figure 8 shows an equivalent circuit of an active matrix display device, wherein an auxiliary capacitor is formed at each position of display elements;
Figures 9ta) and 9(b) show a cross section of a substrate for two types when an auxiliary capacitor is formed by the ALE method in accordance with the present invention; and Figures lO~a) through lO(d) show a cross section of a substrate at successive steps in forming an auxiliary capacitor and a TFT by the ALE method of the present invention.
Same or like reference numerals designate same or corresponding parts throughout the drawings.
Dl~TATT.RI- DESCRIPTION OF TEIE PREFERRI~) EMBODIMENTS
Figure 1 shows a partial equivalent circuit of an active matrix display device for explaining a general concept of the device structure. A plurality of display elements DE are arranged in rows and columns comprising a first transparent electrode E formed on a first substrate and a second transparent electrode E' on a second substrate and light influencing material such as liquid crystal 2Q~162~
therebetween. A plurality of thin film transistors (TFTs) are formed on the first substrate at each corresponding position of the display elements DE. Each TFT comprises gate electrode G, source electrode S and drain electrode D.
A plurality of gate bus lines GB are formed on the first substrate connecting gate electrodes G in the row direction and a plurality of drain bus lines are also formed on the first substrate connecting drain electrodes D in the column direction, the drain bus lines DB being insulated from the gate bus lines GB.
Figure 2 shows an enlarged top view of a first substrate 1 around a TFT forming region, and Figures 3 and 4 are cross sections along lines I-I and II-II respectively of Figure 2.
A manufacturing method of forming a gate insulation layer and inter-busline insulation layer in accordance with the present invention is explained using these Figures 2 to 4. On the transparent substrate 1 of an insulating material such as glass, a titanium layer is deposited and patterned, resulting in forming gate electrodes G in Figure 3. Thereby a lower layer 11 of gate bus lines GB of Figure 4 is formed at the same time. On the lower layer 11 of the gate bus lines GB, an upper layer 12 of aluminum is further deposited and patterned. The aluminum layer 12 of gate bus lines may be deposited and patterned before the titanium deposition for gate 2 0 ~ h 7 electrodes G.
Next, an insulation layer 2 including a lower layer 21 and an upper layer 22, is formed on an entire ~surface of the substrate 1. In the TFT region, it is used as a gate insulation layer 2 in Figure 3. At crossing points of the gate bus lines GB with drain bus lines DB in Figure 4, the insulation layer 2 is used as constituent layer of an inter-busline insulation layer 8. The existing technology generally utilizes silicon oxide (SiO2) as the material of the lower insulation layer 21. However, in the present invention, the lower insulation layer 21 is of aluminum oxide (alumina, A1203) and formed by the ALE
method, and the upper insulation layer 22 may be either of silicon nitride (SiN) formed by a plasma CVD method, or of aluminum nitride (AlN) formed by the ALE method. However, the use of silicon nitride (SiN) by the plasma CVD method is more advantageous because the subsequent deposition of amorphous silicon can be performed using the same plasma CVD apparatus without interruption.
Herein, the ALE method used in the present invention is first explained. The A1203 insulation layer 21 deposited by the ALE method can be obtained using an apparatus which is schematically shown in Figure 5.
Hereinafter, the apparatus of this type is called conveniently ALE apparatus. The apparatus comprises a reaction chamber 30 of a fan-shaped type, which is 2 0 1 ~ ~ hl 7 exhausted by a turbo-molecular pump Vp and the pressure in which is controlled by an orifice valve OF. At the middle portion of the arc-shaped fringe, a gas inlet Nc is provided which spouts argon (Ar) gas into the reaction chamber 30. The direction of Ar gas flow is substantially coincident with the center line of the reaction chamber.
The Ar gas flow forms a gas barrier 31 dividing the reaction chamber 30 into two. On both sides of the gas barrier 31, a pair of gas inlets Na and Nb are provided.
Source gases are supplied into the reaction chamber 30 from these gas inlets Na and Nb. A substrate W, a thin film being deposited thereon, moves back and forth as shown by an arrow from a first position in region 32 to a second position in region 33 and vice versa. The region 32 is solely under the influence of the gas from the inlet Na, and the region 33, the gas from the inlet Nb.
Next, a method of forming a thin A12O3 layer using the ALE apparatus is explained. A substrate is mounted on a stage (not shown) which can move from region 32 to region 33, and is heated to 300C. The reaction chamber is exhausted to a vacuum degree of about 5 x 10 7 Torr by the turbo-molecular pump Vp. A valve V0 is opened and Ar gas is made to flow into the reaction chamber through the inlet Nc at a flow rate of about 500 sccm, the flow rate being controlled by a mass flow controller (not shown). Further, the orifice valve OF is controlled to .
maintain the pressure inside the reaction chamber 30 at about 0.01 Torr.
Next another valve Vl is opened and Ar gas is made to flow through a bubbling cylinder 35 of aluminum chloride (AlC13) and further through the inlet Na. Because the bubbling cylinder 35 is heated to about 110C, aluminum chloride vapor is introduced in the region 32.
Next, another valve V2 is opened and water (H2O) vapor and/or oxygen (2) gas from a bubbling cylinder (not shown) which is maintained at a temperature of 20C is introduced with argon gas into the region 33 of the reaction chamber 30. The aluminum chloride gas in the region 32 will not mix with the water vapor in the region 33, because the argon gas barrier 31 prevents the mixing of these two gases. The vapor or gas pressure in the reaction chamber 30 during the process is always maintained at about 0.01 Torr.
Providing the above gas flow conditions for the ALE apparatus, the substrate 1 is moved from region 32 to region 33 and further back to region 32 with a period of about 3 seconds. During the first half of the period, an aluminum chloride layer is deposited with a thickness of substantially equal to or less than a single atomic layer, and during the second half of the period, the aluminum chloride (AlC13) layer is converted to an aluminum oxide (A12O3) layer due to the following chemical reaction.
20~ i27 -3 3H2O ===> A12O3 + 6HCl The above movement is repeated about 6,000 times, which results in forming the thin aluminum oxide layer 21 having a thickness of approx. 4,000 A.
Returning to the explanation on Figures 2 through 4, the upper insulation layer 22 of silicon nitride (SiN) is formed on the aluminum oxide layer 21 using a plasma CVD
apparatus. The thin silicon nitride layer 22 has a thickness of about 200 A and is formed with the object of improving an interface condition with an amorphous silicon semiconductor layer 3, which is to be deposited immediately after the formation of the silicon nitride layer 22 using the same plasma CVD apparatus.
The silicon nitride layer 22 and the amorphous silicon layer 3, both layers being formed by the same plasma CVD apparatus without interruption, contribute to improve electrical characteristics due to the interface condition between two layers and to prevent an abnormal circular growth of amorphous silicon, which is often observed when the amorphous silicon is directly deposited on the aluminum oxide layer 21.
In the embodiment, the gate insulation layer 2 is a double layer of the aluminum oxide layer 21 and silicon nitride layer 22. This double layer is simultaneously formed on the gate bus line GB of Figure 4 as constituent layers of an inter-busline insulation layer 8. However, -the silicon nitride layer 22 and other layers such as amorphous silicon layer 3 and silicon oxide layer 6 in Figure 4 are required for the TFT only. Therefore, if the inter-busline insulation layer 8 is formed separately by independent processes, the inter-busline insulation layer may be a single layer of the aluminum oxide layer 21.
After forming the silicon nitride layer 22, the amorphous silicon layer 3 and a silicon oxide (SiO2) layer 6 are continously deposited on the entire surface of the substrate using the same plasma CVD apparatus. There is no need of taking the substrate out of the apparatus during these processes.
In the TFT region, the amorphous silicon layer 3 and silicon oxide layer 6 are patterned, and thereafter, a contact layer 4 of doped amorphous silicon (n+ a-Si:H) 4 and a source electrode S and a drain electrode D, both being of titanium, are formed.
In Figures 3 and 4, a chromium (Cr) layer 41 and an aluminum layer 42 are deposited and patterned, resulting in connecting a plurality of drain electrodes D in the column direction and forming drain bus lines DB on the silicon oxide layer 6. A display electrode E of thin transparent indium tin oxide (ITO) film is also formed on the silicon nitride layer 22 and patterned having a connection to each source electrode S.
The method of forming an insulation layer in accordance with the present invention can be applied for forming another insulation layer i.e. a protection layer formed on an entire surface of the substrate 1. The protection layer 7 is of aluminum oxide and is formed by the same ALE method. In forming the protection layer 7, in which the TFT is already formed on the substrate, the substrate temperature can not be raised up to the temperature used in the forming the A12O3 layer 21 previously applied. Excess temperature deteriorates voltage-current characteristics of the TFT and makes a switching voltage thereof to increase. Existing methods of forming silicon nitride layer or silicon oxide layer utilize the known plasma CVD method, in which a growth temperature is forcibly reduced to an enough low temperature, has a drawback of inferior density of the deposited layer and is unsatisfactory for protecting the TFT.
In this embodiment, the substrate is maintained at a temperature as low as 200C. In the similar way, the substrate is exposed to the aluminum chloride vapor and the water vapor alternately in the ALE apparatus. The similar process is repeated for 6,000 cycles with the result of obtaining the aluminum oxide (A12O3) layer of 4,000 A
thickness. When the formation of the protection layer 7 is finished, all processes for the first substrate 1 is completed.
- 2011~27 The embodied substrate of the active matrix display device in accordance with the present invention comprises the gate insulation layer 2, inter-busline insulation layer 8 and protection layer 7 grown by the ALE
method. These insulation layers are high in density and have a close adhesion characteristic to the lower underlying layer and good coverage over the steps of the underlying layer and a high insulation characteristic.
Further, the protection layer 7 is formed at the sufficient low temperature, therefore, the TFT formed on the substrate shows no deterioration in characteristic and the switching voltage thereof is very low.
For example, Figures 6(a) and 6(b) show test results of withstanding voltage between the gate electrode and source/drain electrode of the TFT. Figure 6(a) shows the data obtained for the TFTs comprising the gate insulation layer applying the present invention. Figure 6(b) shows the data for the TFTs produced by the conventional CVD technology. In both Figures, the abscissa shows the applied voltage and the ordinate shows the number of gate bus lines GB having a defect in percentage, the defect being caused by any one of TFTs having a break down (can not withstand the applied voltage within a specified range) connected in the row direction. The data show that, when the gate insulation layer is formed in accordance with the present invention, there is no defect of TFTs in the 2011~27 -range less than 100 volts of withstanding voltage.
Figure 7 shows the relation between the vapor pressure inside the reaction chamber and the number of defects per unit area of an insulation layer, and two curves in Figure 7 are measured by changing a parameter r, which is the ratio of flow rate of barrier gas to total flow rate of source gases. As can be seen from Figure 7, the lower the vapor pressure is, the less the number of defects is. This means that a magnitude of the mean free path of source gas molecules will affect the quality of the formed insulation layer. According to the present invention, the vapor flow in the reaction chamber is preferable to be under the condition of molecular flow.
Under this condition, the mean free path of the gas molecules is long enough and very few of gas molecules flying toward the substrate collide with other molecules and there is very little chance to form a cluster of gas molecules. As a result, the deposition on the substraLe is uniform and there is no nucleus for an abnormal growth of molecules on the substrate. The deposited layer has a good adhesion characteristic to the lower underlying layer and is flawless.
When the vapor pressure is decreased to 0.01 Torr, the number of defects is improved three orders smaller than the number at vapor pressure of 1 Torr.
However, it is impractical to use vapor pressure of less 20~ ~ ~27 than 0.001 Torr, because the growth rate of the deposited layer becomes too low. Therefore, it is preferable to use 1 to several tens of milli Torr in the present invention.
Further, Figure 7 also shows that the larger the parameter r is, the less the number of defects is. This demonstrates that the barrier gas 31 in Figure 5 plays an important role to prevent the mixture of two source gases in regions 32 and 33.
In the embodiments in forming aluminum oxide layer by the ALE method, an aluminum chloride gas (AlC13) is utilized as a first source gas. Other inorganic/organic aluminum compound gases such as aluminum bromide (AlBr3), organoaluminum compound such as trimethylaluminum [Al(CH3)3] and triethylaluminum [Al(C2H5)3], and organoaluminum chloride such as dimethylaluminum chloride [Al(CH3)2Cl] and diethylaluminum chloride [Al(C2H5)2Cl] may be used as the source gas.
When the first source gas (AlC13) is changed to titanium chloride gas (TiC14 or TiC13) or titanium bromide (TiBr4) gas and a substrate is subjected to the similar steps as explained with regard to Figure 5, an insulation layer of titanium oxide (TiO2) can be grown on the substrate. TiO2 has a larger dielectric constant than that of A1203. When a TiO2 layer is used for the gate insulation layer, a switching voltage of the TFT can be decreased.
20~27 If the ALE growth of A12O3 and the ALE growth of TiO2 are repeated alternately, each growth being substantially equivalent to or less than a single atomic layer growth, a composite insulation layer of A12O3 and TiO2 can be obtained, which has a larger dielectric constant than that of A12O3 and a higher insulation characteristic than that of TiO2. The growth of the composite layer can be performed by changing the source gas from aluminum chloride to titanium chloride gas source alternately, whereby the latter gas source is additionally provided and connected to the valve Vl in Figure 5.
In the previous explanation for forming the gate insulation layer 2, a silicon nitride layer is used as the upper insulation layer 22. Replacing the silicon nitride layer, an aluminum nitride tAlN) layer can be used as the upper insulation layer. The ALE apparatus of Figure S can be used for growing the AlN layer. When the source gas supplied to the valve V2 is changed to an ammonia (NH3) gas source and other gas supply arrangements and processes are the same as previously explained, the aluminum nitride layer can be grown.
In order to improve picture quality of an active matrix display device, it is known that an auxiliary capacitor is effective, which is provided at each position of display elements and is inserted in parallel with the display element.
2~ h7 Figure 8 shows an equivalent circuit of this type of a display device. When Figure 8 is compared with the conventional equivalent circuit of Figure 1, it is seen that an auxiliary capacitor Cs is added. A first capacitor electrode is connected to a first transparent display electrode E, and a second capacitor electrode is connected to an earth bus line EB which connects a plurality of second capacitor electrodes in the row direction on a substrate. In an actual design, the first display electrode E is used in common as the first capacitor electrode, and the earth bus line EB is formed separately on the substrate and a portion thereof is used as the second capacitor electrode. These two capacitor electrodes and a capacitor insulation layer therebetween forms the capacitor Cs. The earth bus lines EB are separately formed on the substrate, because these lines are to be insulated from qate bus lines GB and drain bus lines DB on the substrate.
Figures 9(a), 9(b) and lO(d) show a cross section of substrates with capacitor Cs and TFT for three different types. In Figure 9(a), a gate electrode G and a second capacitor electrode EB (earth bus line) are formed directly on a substrate 1. A gate insulation layer 2 is used in common as a capacitor insulation layer 9.
In Figure 9~b), a second capacitor electrode EB
is first formed on a substrate 1, however, a gate electrode 2 0 ~ 7 G is formed on a capacitor insulation layer 9. A
transparent display electrode E iS also formed on the capacitor insulation layer 9.
In Figure 10~d), a transparent display electrode E iS formed on a double layer 9 of first and second insulation layers 91 and 92. This type eliminates an additional process of forming a connector 10 used in Figure 9(b).
Generally, the second capacitor electrodes EB
(earth bus lines) are made of indium tin oxide (ITO), because electrodes EB are required to be tran-sparent. ITO
has rather a high resistivity as an electrical conductor, therefore, the thickness of the earth bus lines EB are preferable to be larger in order to reduce the resistance thereof.
With regard to the structure of Figure 9(a), the earth bus lines EB should be formed with stripe pattern, each earth bus line running in the row direction and being connected with other bus lines at the end portion. This is because the earth bus line EB can not cross gate bus lines formed on the same level. Therefore, the electrical resistance of each earth bus line EB can not be reduced to a sufficient low level. On the other hand, earth bus lines of Figures 9(b) and 10(d) are formed on the lower level independently on the substrate. There is no grade crossing with gate bus lines. The earth bus lines EB can be 2 ~ 7 connected in both row and column directions, resulting in sufficient reduction of electrical resistance of all earth bus lines EB.
The capacitor insulation layers 9 used in Figures 9(a), 9(b) and lO(d) are required to have a good covering effect over steps formed by underlying layer surface and to have a high density as the insulation material and further preferably to have no flaw in the insulation layer.
The method of forming insulation layer in accordance with the present invention meet well these requirements. In forming the capacitor insulation layer 9 of Figure 9(a), the gate insulation layer 2 of aluminum oxide layer 21 and silicon nitride layer 22 of Figure 3, can be used therefor without change. The capacitor insulation layer 9 of Figure 9(b) is of aluminum oxide (A1203) layer and can be formed utilizing the same method as used in forming the aluminum oxide layer 21 of Figures 3 and 4.
An example of manufacturing processes of the auxiliary capacitor is explained using Figures lO(a) through lO(d). An earth bus line EB (second capacitor electrode) of ITO is deposited on a substrate 1 and patterned as shown in Figure lO(a). Utilizing the ALE
method of the present invention, an aluminum oxide (A1203) thin layer 91 (capacitor insulation layer) is grown until the thickness of 4,000 A can be obtained as shown in Figure 201~7 lO(b). In Figure lO(c), a gate electrode G of titanium having a thickness of about 800 A and gate bus lines (not shown) are formed on the aluminum oxide layer 91.
Thereafter, the surface of the substrate is subjected to an oxygen (2) plasma process, which has effects of removing remainder of resist material and oxidizing titanium surface of the gate electrode G.
In Figure lO(d), a gate insulation layer 2 and a second capacitor insulation layer 92 are formed on the substrate of Figure lO(c). These insulation layers are of a double layer of silicon oxide (SiO2) of about 1,000 A in thickness and silicon nitride (SiN) of about 2,000 A in thickness. The double insulation layer 92 and the aluminum oxide layer 91 in the capacitor forming region form the capacitor insulation layer 9. An amorphous silicon (a-Si:H) layer 3 of about 150 A in thickness and a silicon oxide or nitride (SiO2 or SiN) layer 6 of about 1,400 A in thickness are deposited by a plasma CVD method and patterned. The growth processes of the double insulation layer 2 and 92, amorphous silicon layer 3 and silicon oxide layer 6 can be performed continously using the same plasma CVD apparatus, during which the substrate does not need to be taken out of the apparatus.
Further, a doped amorphous silicon (n a-Si:H) layer 4, and source and drain electrodes S and D of titanium are deposited and patterned, with a result of 2~116~7 forming a TFT. Finally, a display electrode E of ITO is formed on the insulation layer 9.
The auxiliary capacitor Cs in the active matrix display device of the present invention comprises at least an aluminum oxide layer in the capacitor insulation layer 9, the aluminum oxide layer being formed by the ALE method of the present invention. Even when the earth bus line EB
has enough thickness with steep steps, the capacitor insulation layer shows a high insulation characteristic, which reduces defects due to current leakage between capacitor electrodes.
The method can be embodied in other capacitor structures of display devices than those described above.
In the embodiments, an insulation layer manufactured by the ALE method of the present invention is applied for forming gate insulation layer, inter-busline insulation layer, protection layer and capacitor insulation layer in the active matrix display device. The present invention may be embodied in other specific types without departing from the spirit or essential characteristics thereof.
The disclosed embodiments have the structures such that gate electrode is first formed on a substrate and that insulation layer, active semiconductor layer, and source and drain electrodes are subsequently formed in this order (called conventionally inverted staggered type), 2 ~ 2 7 , however, the present invention may be embodied in a normal type (staggered type) active matrix display device, in which the above deposition sequence is inverted.
Further, this invention may be embodied in an active matrix display device for forming a gate insulation layer, wherein gate bus lines and data bus lines are separately formed on first and second substrates respectively and each drain electrode is connected to an adjacent gate bus line. This type of the display device is disclosed in U.S. Patent No. 4,818,981 issued on April 4, 1989 by the same Applicant.
The presently disclosed embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims, rather than the foregoing description, and all changes which come within the meaning and range of equivalence of the claims are, therefore, to be embraced therein.
An insulation layer in accordance with the present invention is superior in quality and has very few defects. The steps of the underlying surface are well covered by the formed insulation layer. Further, the insulation layer can be formed at comparatively low temperatures. Active matrix display devices manufactured in accordance with the present invention show a high reliability, a high withstanding voltage, and a high - ~ 201~ ~27 picture quality.
Claims (18)
1. A method of manufacturing an active matrix display device, comprising first and second substrates forming an enclosure, a plurality of display elements arranged in rows and columns, each display element comprising first and second transparent electrodes formed on inside surfaces of the first and second substrates respectively and light influencing material therebetween, a plurality of thin film transistors formed on the first substrate, the thin film transistor located at each corresponding position of the display elements and having a gate electrode, a gate insulation layer, a semiconductor layer, and source and drain electrodes, and at least gate bus lines formed on the first substrate for driving the display elements through the thin film transistors, the gate bus line connecting the gate electrodes located in the row direction, said manufacturing method comprising the steps of forming the gate insulation layer of the thin film transistor, namely: (a) providing a reaction chamber compri-sing an inlet for a first gas and an inlet for a second gas and an inlet for a barrier gas, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow; (b) disposing said first substrate at the first position and subjecting it to the first gas of a metal inorganic/organic compound, which can react with at least one of H2O and O2 and form the metal oxide under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer; (c) transferring said first substrate to the second position and subjecting the surface of a metal inorganic/organic compound layer formed in step (b) to the second gas of the at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer; and (d) repeating the steps (b) and (c) alternately for plural cycles until a specified thickness of the metal oxide layer is grown.
2. A method of manufacturing an active matrix display device as recited in claim 1, wherein said active matrix device further comprises source/drain bus lines connecting a plurality of source/drain electrodes in the column direction and formed on the first substrate.
3. A method of manufacturing an active matrix display device as recited in claim 1, wherein said method of forming the thin film transistor further comprises the following previous and subsequent steps of: forming the gate electrode of conductive material on the first substrate before forming said gate insulation layer; and depositing an amorphous silicon semiconductor layer on said formed gate insulation layer by a plasma CVD method.
4. A method of manufacturing an active matrix display device as recited in claim 1, wherein said method of forming the thin film transistor further comprises the step (e) after said step (d): (e) depositing a second gate insulation layer of silicon nitride on said gate insulation layer by a plasma CVD method.
5. A method of manufacturing an active matrix display device as recited in claim 1, wherein said metal inorganic/organic compound used in the step (a) is any one or a combination selected from either the group of aluminum chloride, aluminum bromide, trimethylaluminum, triethylaluminum, dimethylaluminum chloride and diethylaluminum chloride for growing aluminum oxide, or the group of titanium chloride and titanium bromide for growing titanium oxide.
6. A method of manufacturing an active matrix display device, the device comprising first and second substrates forming an enclosure, a plurality of display elements arranged in rows and columns, each display element comprising first and second transparent electrodes formed on inside surfaces of the first and second substrates respectively and light influencing material therebetween, a plurality of thin film transistors formed on the first substrate, the thin film transistor located at each corresponding position of the display elements and having a gate electrode, a gate insulation layer, a semiconductor layer, and source and drain electrodes, gate bus lines and source/drain bus lines formed on the first substrate for driving the display elements through the thin film transistors, the gate bus line connecting the gate electrodes located in the row direction and the source/drain bus line connecting the source/drain electrodes in the column direction and the gate and source/drain bus lines being insulated from each other by an inter-busline insulation layer at each intersection, said manufacturing method comprising the following steps of forming the inter-busline insulation layer:
providing a reaction chamber comprising first and second gas inlets and a barrier gas inlet, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow; depositing the inter-busline insulation layer on the gate bus lines by a method which comprises performing a specified number of repeated cycles of disposing the first substrate at the first position and subjecting it to the first gas of a metal inorganic/organic compound, which can react with at least one of H2O and O2 and form the metal oxide under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer, and transferring said first substrate to the second position, and subjecting the surface of the thus formed metal inorganic/organic compound layer to the second gas of the at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer; and forming the source/drain bus lines on the inter-busline insulation layer.
providing a reaction chamber comprising first and second gas inlets and a barrier gas inlet, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow; depositing the inter-busline insulation layer on the gate bus lines by a method which comprises performing a specified number of repeated cycles of disposing the first substrate at the first position and subjecting it to the first gas of a metal inorganic/organic compound, which can react with at least one of H2O and O2 and form the metal oxide under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer, and transferring said first substrate to the second position, and subjecting the surface of the thus formed metal inorganic/organic compound layer to the second gas of the at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer; and forming the source/drain bus lines on the inter-busline insulation layer.
7. A method of manufacturing an active matrix display device as recited in claim 6, wherein said method of forming the inter-busline insulation layer further comprises the step of depositing a second inter-busline insulation layer of silicon nitride on said inter-busline insulation layer by a plasma CVD method before the step of forming the source/drain bus lines.
8. A method of manufacturing an active matrix display device as recited in claim 6, wherein said metal inorganic/-organic compound in the depositing step of the inter-busline insulation layer is any one or a combination selected from either the group of aluminum chloride, aluminum bromide, trimethylaluminum, triethylaluminum, dimethylaluminum chloride and diethylaluminum chloride for growing aluminum oxide, or the group of titanium chloride and titanium bromide for growing titanium oxide.
9. A method of manufacturing an active matrix display device as recited in claim 6, wherein said depositing step of the inter-busline insulation layer is the common step for depositing the gate insulation layer.
10. A method of manufacturing an active matrix display device, comprising first and second substrates forming an enclosure, a plurality of display elements arranged in rows and columns, each display element comprising first and second transparent electrodes on inside surfaces of the first and second substrates respectively and light influencing material therebetween, a plurality of thin film transistors formed on the first substrate, the thin film transistor located at each corresponding position of the display elements and having a gate electrode, a gate insulation layer, a semiconductor layer, and source and drain electrodes, gate bus lines and source/drain bus lines formed on the first substrate for driving the display elements through the thin film transistors, the gate bus line connecting the gate electrodes located in the row direction and the source/drain bus line connecting the source/drain electrodes in the column direction, said device further comprising a protection layer at least on the thin film transistor region, said manufacturing method comprising the following steps of forming the protection layer: providing a reaction chamber comprising first and second gas inlets and a barrier gas inlet, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow; forming the thin film transistors on the first substrate; and depositing the protection layer on the thin film transistors by a method which comprises performing a specified number of repeated cycles of disposing the first substrate at the first position and subjecting it to the first gas of a metal inorganic/-organic compound, which can react with at least one of H2O and O2 to form the metal oxide under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer, and transferring said first substrate to the second position, and subjecting the surface of the thus formed metal inorganic/-organic compound layer to the second gas of the at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer.
11. A method of manufacturing an active matrix display device as recited in claim 10, wherein said metal inorganic/-organic compound in the depositing step of the protection layer is any one or a combination selected from either the group of aluminum chloride, aluminum bromide, trimethylaluminum, triethylaluminum, dimethylaluminum chloride and diethylaluminum chloride for growing aluminum oxide, or the group of titanium chloride and titanium bromide for growing titanium oxide.
12. A method of manufacturing an active matrix display device, comprising first and second substrates forming an enclosure, a plurality of display elements arranged in rows and columns, each display element comprising first and second transparent electrodes formed on inside surfaces of the first and second substrates respectively and light influencing material therebetween, a plurality of thin film transistors formed on the first substrate, the thin film transistor located at each corresponding position of the display elements and having a gate electrode, a gate insulation layer, a semiconductor layer, and source and drain electrodes, gate bus lines and source/drain bus lines formed on the first substrate for driving the display elements through the thin film transistors, the gate bus line connecting the gate electrodes located in the row direction and the source/drain bus line connecting the source/drain electrodes in the column direction, said display device further comprising an auxiliary capacitor corresponding to each said display element formed by the first transparent electrode and another auxiliary electrode formed on the first substrate, having a capacitor insulation layer therebetween, said manufacturing method comprising the following steps of forming the capacitor insulation layer: providing a reaction chamber comprising first and second gas inlets and a barrier gas inlet, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow; forming the auxiliary electrode on the first substrate; depositing the capacitor insulation layer on the auxiliary electrode by a method which comprises performing a specified number of repeated cycles of disposing the first substrate at the first position and subjecting it to the first gas of a metal inorganic/organic compound, which can react with at least one of H2O and O2 and form the metal oxide under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer, and transferring said first substrate to the second position, and subjecting the surface of the thus formed metal inorganic/-organic compound layer to the second gas of the at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer; and forming the first transparent electrode on the capacitor insulation layer.
13. A method of manufacturing an active matrix display device as recited in claim 12, wherein said metal inorganic/-organic compound in the depositing step of the capacitor insulation layer is any one or a combination selected from either the group of aluminum chloride, aluminum bromide, trimethylaluminum, triethylaluminum, dimethylaluminum chloride and diethylaluminum chloride for growing aluminum oxide, or the group of titanium chloride and titanium bromide for growing titanium oxide.
14. A method of forming a thin insulation layer used in an active matrix display device, the thin insulation layer being used as any one among a gate insulation layer for a thin film transistor, an inter-busline insulation layer, a protective layer on a thin film transistor and an insulation layer for an auxiliary capacitor, said method comprising the steps of: providing a reaction chamber and means for transferring a substrate between first and second positions within said reaction chamber, and providing a first gas of a metal inorganic/organic compound at said first position and a second gas of at least one of H2O and O2 at said second position, and providing a barrier gas flow separating said first gas and said second gas such that only the barrier gas flow separates the first and second gases under a condition of molecular flow, wherein the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas; and performing a specified number of repeated cycles of disposing a substrate at said first position within said reaction chamber and subjecting it to said first gas of a metal inorganic/organic compound, which can react with at least one of H2O and O2 and form the metal oxide, under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for duration of depositing almost a single atomic layer; and transferring the substrate to said second position within said reaction chamber and subjecting the surface of a thus formed metal inorganic/organic compound layer on said substrate to the H2O gas and/or O2 gas under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer.
15. A method of forming a thin insulation layer as recited in claim 14, wherein said metal inorganic/organic compound is any one or a combination selected from either the group of aluminum chloride, aluminum bromide, trimethylaluminum, triethylaluminum, dimethylaluminum chloride and diethylaluminum chloride for growing aluminum oxide, or the group of titanium chloride and titanium bromide for growing titanium oxide.
16. A method of forming a thin insulation layer in an active matrix display device, the insulation layer being used as any one among a gate insulation layer for a thin film transistor and an insulation layer for an auxiliary capacitor, said method comprising the steps of: (a) providing a reaction chamber comprising first and second gas inlets and a barrier gas inlet, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow;
(b) disposing said first substrate at the first position and subjecting it to the first gas of aluminum chloride under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer;
(c) transferring said first substrate to the second position, and subjecting the surface of a thus formed aluminum chloride layer to the second gas of a vapor of at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the aluminum chloride layer to an aluminum oxide layer; (d) transferring said first substrate to the first position, and subjecting the surface of the aluminum oxide layer to the another first gas of titanium chloride under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer; (e) transferring the first substrate to the second position, and subjecting the surface of the thus formed titanium chloride layer to the second gas of a vapor of at least one of H2O and O2 under the same condition as in step (c) for a duration of replacing the titanium chloride layer to a titanium oxide layer; and (f) repeating the steps (b) through (e) for plural cycles until a specified thickness of the insulation layer is grown.
(b) disposing said first substrate at the first position and subjecting it to the first gas of aluminum chloride under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer;
(c) transferring said first substrate to the second position, and subjecting the surface of a thus formed aluminum chloride layer to the second gas of a vapor of at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the aluminum chloride layer to an aluminum oxide layer; (d) transferring said first substrate to the first position, and subjecting the surface of the aluminum oxide layer to the another first gas of titanium chloride under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer; (e) transferring the first substrate to the second position, and subjecting the surface of the thus formed titanium chloride layer to the second gas of a vapor of at least one of H2O and O2 under the same condition as in step (c) for a duration of replacing the titanium chloride layer to a titanium oxide layer; and (f) repeating the steps (b) through (e) for plural cycles until a specified thickness of the insulation layer is grown.
17. A method of forming a thin film transistor on a substrate comprising a gate electrode, a gate insulation layer, a semiconductor layer, and source and drain electrodes, wherein said method comprises performing the following steps of forming the gate insulation layer: (a) providing a reaction chamber comprising first and second gas inlets and a barrier gas inlet, an outlet for exhausting these gases and means for transferring a substrate between first and second positions within said reaction chamber and flowing the first and second gases and the barrier gas, wherein the first and second gas inlets and the barrier gas inlet and the gas outlet are arranged such that only the barrier gas flow separates the first and second gases under a condition of molecular flow and defines said first and second positions, and such that the substrate at the first position is exposed to the first gas and the substrate at the second position is exposed to the second gas under the condition of molecular flow; (b) disposing said first substrate at the first position and subjecting it to the first gas of a metal inorganic/organic compound, which can react with at least one of H2O and O2 and form the metal oxide under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of depositing almost a single atomic layer; (c) transferring said first substrate to the second position and subjecting the surface of a metal inorganic/organic compound layer formed in step (b) to the second gas of the at least one of H2O and O2 under the condition of molecular flow, the gas pressure in the reaction chamber ranging between 1 and several tens of milli-Torr, for a duration of replacing the metal inorganic/organic compound layer to the metal oxide layer; and (d) repeating the steps (b) and (c) alternately for plural cycles until a specified thickness of the metal oxide layer is grown.
18. A method of forming a thin film transistor as recited in claim 17, wherein said method further comprises the following steps of: (e) depositing a second gate insulation layer of silicon nitride on said gate insulation layer by a plasma CVD method; and (f) depositing the amorphous silicon semiconductor layer on the second insulation layer by the plasma CVD method using the same apparatus in the step (d).
Applications Claiming Priority (2)
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JP1066762A JPH0824191B2 (en) | 1989-03-17 | 1989-03-17 | Thin film transistor |
JP1-066762 | 1989-03-17 |
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CA2011627A1 CA2011627A1 (en) | 1990-09-17 |
CA2011627C true CA2011627C (en) | 1996-08-27 |
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US (1) | US5374570A (en) |
EP (1) | EP0387892B1 (en) |
JP (1) | JPH0824191B2 (en) |
KR (1) | KR930008537B1 (en) |
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1989
- 1989-03-17 JP JP1066762A patent/JPH0824191B2/en not_active Expired - Lifetime
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1990
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JPH0824191B2 (en) | 1996-03-06 |
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EP0387892A3 (en) | 1990-12-05 |
EP0387892A2 (en) | 1990-09-19 |
DE69020012D1 (en) | 1995-07-20 |
CA2011627A1 (en) | 1990-09-17 |
KR900015309A (en) | 1990-10-26 |
JPH02246161A (en) | 1990-10-01 |
US5374570A (en) | 1994-12-20 |
EP0387892B1 (en) | 1995-06-14 |
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