CA2039068A1 - Vertical cavity surface emitting laser with electrically conducting mirrors - Google Patents

Vertical cavity surface emitting laser with electrically conducting mirrors

Info

Publication number
CA2039068A1
CA2039068A1 CA2039068A CA2039068A CA2039068A1 CA 2039068 A1 CA2039068 A1 CA 2039068A1 CA 2039068 A CA2039068 A CA 2039068A CA 2039068 A CA2039068 A CA 2039068A CA 2039068 A1 CA2039068 A1 CA 2039068A1
Authority
CA
Canada
Prior art keywords
vcsel
mirror
surface emitting
cavity surface
vertical cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2039068A
Other languages
French (fr)
Other versions
CA2039068C (en
Inventor
Dennis Glenn Deppe
Leonard Cecil Feldman
Rose Fasano Kopf
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2039068A1 publication Critical patent/CA2039068A1/en
Application granted granted Critical
Publication of CA2039068C publication Critical patent/CA2039068C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode

Abstract

VERTICAL CAVITY SURFACE EMITTING LASERS
WITH ELECTRICALLY CONDUCTING MIRRORS
Abstract This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL
with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiencies on the order of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology.
CA002039068A 1990-05-21 1991-03-26 Vertical cavity surface emitting laser with electrically conducting mirrors Expired - Fee Related CA2039068C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/526,204 US5068868A (en) 1990-05-21 1990-05-21 Vertical cavity surface emitting lasers with electrically conducting mirrors
US526,204 1990-05-21

Publications (2)

Publication Number Publication Date
CA2039068A1 true CA2039068A1 (en) 1991-11-22
CA2039068C CA2039068C (en) 1994-02-08

Family

ID=24096368

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002039068A Expired - Fee Related CA2039068C (en) 1990-05-21 1991-03-26 Vertical cavity surface emitting laser with electrically conducting mirrors

Country Status (9)

Country Link
US (1) US5068868A (en)
EP (1) EP0458493B1 (en)
JP (1) JP2598179B2 (en)
KR (1) KR0142585B1 (en)
CA (1) CA2039068C (en)
DE (1) DE69105037T2 (en)
HK (1) HK137195A (en)
SG (1) SG31195G (en)
TW (1) TW198147B (en)

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US5463275A (en) * 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
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US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
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US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6174749B1 (en) 1998-05-13 2001-01-16 The Regents Of The University Of California Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
US6347107B1 (en) 1998-07-15 2002-02-12 Eastman Kodak Company System and method of improving intensity control of laser diodes using back facet photodiode
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
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JP2005123416A (en) * 2003-10-17 2005-05-12 Ricoh Co Ltd Surface emitting laser element and manufacturing method thereof, and surface emitting laser array and optical transmission system
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Also Published As

Publication number Publication date
SG31195G (en) 1995-08-18
DE69105037D1 (en) 1994-12-15
US5068868A (en) 1991-11-26
KR910020979A (en) 1991-12-20
JPH04229688A (en) 1992-08-19
JP2598179B2 (en) 1997-04-09
KR0142585B1 (en) 1998-08-17
CA2039068C (en) 1994-02-08
TW198147B (en) 1993-01-11
EP0458493B1 (en) 1994-11-09
HK137195A (en) 1995-09-08
EP0458493A2 (en) 1991-11-27
DE69105037T2 (en) 1995-03-23
EP0458493A3 (en) 1992-03-25

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