CA2052967A1 - Preparation of titanium nitride from organometallic precursors - Google Patents
Preparation of titanium nitride from organometallic precursorsInfo
- Publication number
- CA2052967A1 CA2052967A1 CA002052967A CA2052967A CA2052967A1 CA 2052967 A1 CA2052967 A1 CA 2052967A1 CA 002052967 A CA002052967 A CA 002052967A CA 2052967 A CA2052967 A CA 2052967A CA 2052967 A1 CA2052967 A1 CA 2052967A1
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- Prior art keywords
- titanium
- titanium nitride
- precursor
- disilazane
- temperature
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
- C01B21/0763—Preparation from titanium, zirconium or hafnium halides
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5068—Titanium nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Abstract
ABSTRACT
A titanium tetrahalide is reacted with at least one disilazane to prepare a titanium-containing organometallic precursor, which is thereafter pyrolyzed to form crystalline titanium nitride.
A titanium tetrahalide is reacted with at least one disilazane to prepare a titanium-containing organometallic precursor, which is thereafter pyrolyzed to form crystalline titanium nitride.
Description
- 1 23~29~7 TITLE
PREPARATION OF TITANIUM NITRIDE
FROM O~GA~OMETALLIC PRECURSORS
FIELD OF THE INVENTION
This invention relates generally to the preparation of titanium nitride from organometallic -10 precursors. More particularly, the invention relates to pyrolyzable organometallic precursor materials and their preparation, and to the pyrolysis of said materials to produce titanium nitride and titanium nitride coated articles.
BACKGROUND OF THE INVENTION
Organometallic precursor processing has been used in recent years to prepare advanced materials such as titanium nitride, silicon carbide, silicon nitride, and boron nitride. This method has several advantages over classical techniques, e.g., relatively low temperature processing requirements, ease of control for maintaining high purity, and formability of the ultimately produced advanced material into fihers, coatings, films, etc. ~enerally, the organometallic precursors are transformed into the corresponding advanced materials by a pyrolytic process.
Titanium nitride is a particularly useful advanced material having several desirable properties such as, for example, a high melting point (2,950C3, high hardness (8-9 on the Moh scale), excellent strength (34,000 psi bending strength, and 141,000 psi compression strength), high thermal conductivity, and nonreactivity 2 2~2967 with a variety of other materials. Furthermore, it is unaffected by acids, excepting aqua regia; however, alkali compounds may cause its decomposition.
The conventional methods ~or preparing titanium nitride involve the high temperature reaction of a source of titanium such as, for e~ample, titanium tetrachloride or titanium metal, with a source of nitrogen such as, for example, ammonia or nitrogen.
It is known to prepare titanium nitride by the pyrolysis of a polymeric precursor formed by reacting ammonia with a titanium dialkylamide. See Brown, G. M. and Maya, L., "Ammonolysis Products of the Dialkylamides of Titanium, Zirconium, and Niobium as Precursors to Metal Nitrides,~ Journal of the American Ceramic Society, v. 71 ~1988) 78-82. Specifically, a titanium dialkylamide such as, for example, tetrakis(dimethylamido)titanium is reacted with liquid anhydrous ammonia to form an imido- or nitrido-bridged polymeric precursor having the general formula Ti3(NX2)(NH2)2N3, wherein X is an alkyl group.
Thereafter, the precursor is pyrolyzed in an ammonia atmosphere to prepare titanium nitride. During the initial staqes of the pyrolysis process, NHX2 and NH3 are released, forming a compound having the approximate composition Ti3N4. At a temperature of approximately 700C to 800C, additional nitrogen is released thereby forming partially crystalline titanium 3 nitride.
Also, it is known to prepare titanium nitride by the pyrolysis of a polymeric precursor formed by reacting tetrakis(dimethylamido)titanium with bifunctional amines. See Seyferth, D. and Miganani, G., "The 3 2~2967 Preparation of Titanium Nitride and Titanium Carbonitride by the Preceramic Polymer Route," Gov. Rep. Announce.
Index (US), v. 88 (1988) 827, 109. The publication discloses that tetrakis(dimethylamido)titanium is reacted with a diamine such as, for example, CH3NHCH2CH2NHCH3 to form a polymeric precursor which pyrolyzes under a stream of ammonia to give fairly pure titanium nitride.
Pyrolysis is carried out at a temperature of approximately 800C to 1,200C to form amorphous titanium nitride, which must thereafter be calcined at approsimately l,500C to form crystalline titanium nitride.
In light of the prior art, there is recognized a need for developing a process employing organometallic precursors which are pyrolyzed at lower temperatures to prepare crystalline titanium nitride.
In Bruger, H. and Wannagat, U., "Uber Titan--Stickstoff-Verbindungen, 2.Mitt.," Mh. Chem., Bd.
94 (1963) 761, a process is disclosed for reacting titanium tetrachloride with N,N-bis(trimethylsilyl)amine to produce an adduct, TiCl4-HN[Si(CH3)2]2. The publication does not teach nor suggest that the organometallic compound would be useful for preparing titanium nitride by a pyrolytic process.
Likewise, Andrianov, K. A., Astakhin, V. V., Kochkin, D. A., and Sukhanova, I. V., "Reaction of 3 Hexamethyldisilazane With Aluminum and Titanium Halides Method of Synthesizing Trialkylhalosilanes," Zh. Obsh.
Khim., v. 31, n. 10 (1961) 3,410 discloses a method for preparing trimethlyhalosilanes by reacting together an equimolar mixture of hexamethyldisilazane and a titanium halide such as, for example, titanium tetrachloride. The 2~52~7 authors describe the organometallic reaction byproduct as being NHTiCl2, but do not suggest that the material could be used to form titanium nitride by pyrolysis.
Finally, U.S. Patent No. 4,482,689 to Haluska discloses a process for preparing polymetallo(disily)-silazane polymers, which are useful in the preparation of ceramic materials by pyrolysis in an inert atmosphere or in a vacuum. Specifically, a chlorine-containing disilane, a disilazane such as, for example, hexamethyl-disilazane, and a metal halide such as, for example, titanium tetrachloride, are reacted together in an inert, essentially anhydrous atmosphere to produce a trialkyl-silylamino-containing metallosilazane polymer, which may thereafter be pyrolyzed at a temperature between 750C
and 1,200C to prepare an amorphous ceramic material containing titanium nitride.
It would be desirable to prepare organometallic precursors, by a simple process, which precursors could be pyrolyzed at lower temperatures than presently disclosed in the prior art, to produce crystalline titanium nitride.
It must be noted that the prior art referred to hereinabove has been collected and examined only in light of the present invention as a guide. It is not to be inferred that such diverse art would otherwise be assembled absent the motivation provided by the present invention, nor that the cited prior art when considered in combination suggests the present invention absent the teachings herein.
2~2~7 SUMMARY OF THE INVENTION
Accordant with the present invention, a process for preparing titanium nitride has surprisingly been discovered, comprising the steps of:
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and B) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
Moreover, the method for preparing titanium nitride has been found useful for coating substrates by a process, comprising the steps of:
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor;
B) applying the organometallic precursor to the surface of the substrate; and C) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
The ratio of titanium tetrachloride to disilazane may vary over a wide range, and result in the production of different titanium-containing 3 organometallic precursors. The reaction for preparing the precursor may be carried out in the presence of a solvent, and is generally conducted within a ternperature range from about -100C to about 100C. Pyrolysis of the organometallic precursors of the present invention occurs generally at temperatures at least about ~00C, in 20~2~67 contrast to pyrolysis reactions disclosed in the prior art which require temperatures in the range of 800C and greater.
The process of the present invention is useful for preparing titanium-containing organometallic precursors which are thereafter pyrolyzed to produce crystalline titanium nitride. The titanium nitride so produced is particularly suited for coating the surfaces of articles such as internal combustion engine components, to provide wear resistance and corrosion protection therefor.
DETAILED DESCRIPTION QF T~E PREFERRED EMBODIMENT
The present invention is directed to the preparation of titanium-containing organometallic precursors, and the subsequent pyrolysis of said precursors, to form titanium nitride. This novel process involves the reaction of a titanium tetrahalide and at least one disilazane to prepare an organometallic precursor, and the subsequent pyrolysis of said precursor to form titanium nitride.
The first reactant for use in preparing the organometallic precursors of the present invention is a titanium tetrahalide. Titanium tetrahalides are well known compounds to those ordinarily skilled in the chemical arts, and include TiCl4, TiBr4, TiF4, and 3 TiI4. A preferred titanium tetrahalide is titanium tetrachloride, which may be produced by heating a quantity of titanium dioxide or a titanium containing ore along with carbon while passing a stream of chlorine gas thereover. Details concerning the manufacture and characteristics of titanium tetrahalides are more fully 2052~7 set forth in the Kirk-Othmer Concise Encyclopedia of Chemical Technology, John Wiley & Sons, New York (1985) p. 1185-1186.
The second reactant for use in preparing the organometallic precursors according to the present invention is at lsast one disilazane having the general formula:
-R3SlNHSlR3 (I) wherein each R, independently, is hydrogen, a monovalent alkyl radical having 1-3 carbon atoms, phenyl, or a vinyl radical. Examples of contemplated equivalent disilazanes having the same operability and utility are, without limitation, (CHa)~SiNHSi(CH3)3, (C6H")(CH3)2SiNHSi(CH3)2(C6H~), ~CH2-CH)(CH3)2SiNHSi(CH3)2(CH=CH2), (C6H~,)(CH2-CH)(CH3)SiNHSi(CHa)(CH'CH2)(C6H~), (CH2DCH)(C6H~)2SiNHSi(C6H5)2(CH-CH2), (cH2~cH)(c2H~)2siNHsi(c2H5)2(cH=cH2)~
(CH2'CH)(C6H~)(C2H~)SiNHSi(C2H~)(C6H6)(CH-CH2), H(CHa)2SiNHSi(CHa)2H, H2(CHa)SiNHSi(CH3)H2, and H(C6H6)(CHa)SiNHSi(CHa)(C6H5)H. Mixtures of disilazanes may likewise conveniently be used for the second reactant. A preferred disilazane is hexamethyldisilazane.
Preparation of the titanium-containing organometallic precursors according to the present invention conveniently may be carried out by admixing the titanium tetrahalide and disilazane reactants under rigorously anhydrous conditions. The mixture of reactants may optionally includs a solvent which does not react with the titanium tetrahalide such as, for example, dichloromethane, carbon tetrachloride, toluene, benzene, pentane, hexane, etc. A preferred solvent is dichloromethane. The solvent may comprise up to about 80~ by weight of the reaction mixture. The ratio of titanium tetrachloride to disilazane employed in the reaction mixture may vary on a molar basis from about 1:0.5 to about 1:3. Preferably the ratio is from about l:l to about 1:2. The reaction is generally effected at temperatures in the range from about -100C to about 100C. Preferably, the reaction is carried out at about room temperature from about 20C to about 30C. The time required for complete reaction to occur is not sharply - critical, and may vary over wide limits from several minutes to several hours. Thus, the titanium-containing organometallic precursors form from the reaction mixture as a precipitate which may be vacuum stripped to prepare a free flowing powder prior to the pyrolysis operation.
While not wishing to be bound by any particular theory regarding the formation and composition of the titanium-containing organometallic precursors, it is believed that specific precursor compounds are generated, which are distinct based upon the ratio of starting reactants.
In the case where an equimolar mixture of a titanium tetrahalide and at least one disilazane are reacted together, mass balance calculations and infrared spectral analyses of the resultant organometallic precursor seem to suggest that the following imido-bridged structure is formed:
R3Si~NHTiZ2]XNHSiR3 (II) wherein R is as defined hereinabove, Z is a halo radical, and x is from about l to about 20. These structures may 20~2~67 g be highly crosslinked via interactions between halo and/or trimethylsilylamino bridges.
In a preferred embodiment of the present invention, wherein titanium tetrachloride is reacted with two molar equivalents of at least one disilazane, analysis suggests that the following diimido-bridged structure is formed:
R3SiNH(Ti~lNH)2NHSiR3 (III) wherein R is as defined hereinabove. These structures may initially crosslink via the formation of NH bridges, in combination with the loss of chlorotrimethylsilane.
Thereafter, further crosslinking may occur via bridging between chloro, amino, and/or trimethylsilylamino groups.
The titanium-containing organometallic percursors are separated from the reaction mixtures by conventional methods well known in the art, and thereafter pyrolyzed in an inert atmosphere, to form titanium nitride. The inert atmosphere may be, for example, ammonia, nitrogen, argon or mixtures thereof, or a vacuum. A preferred inert atmosphere is ammonla.
Pyrolysis of the organometallic precursors to form titanium nitride conveniently occurs at a temperature of at least about 600C, which is significantly below the temperatures disclosed in the prior art as useful for pyrolyzing titanium-containing polymeric precursors. The time required for complete pyrolysis may vary over wide limits, depending upon the rate at which the organometallic precursor is heated, from several minutes to several hours.
`` 2~2~67 The process for preparing titanium nitride according to the present invention is suitable for depositing a layer of titanium nitride onto a substrate.
The precursor may be applied to the surface of the substrate by any conventional method, such as by molding or casting, and thereafter pyrolyzed to form the titanium nitride coating.
Alternatively, a layer of the organometallic precursor may be formed on the surface of the substrate ffl causing the precursor to precipitate from the reaction solution and simultaneously deposit directly onto the substrate, after which the organometallic precursor is pyrolyzed to form the titanium nitride coating. Such coatings are advantageous, for example, for lining parts of apparatus such as internal combustion engine components to be protected against corrosion and oxidation at high temperatures. The resultant coatings are crystalline titanium nitride.
Example l ~L~E~ation of~ Q~ganometallic Precursor A 250 ml three-neck flask fitted with a condenser is charged with titanium tetrachloride (about 6.9 g, 36.3 mmol). Hexamethyldisilazane (about 5.87 g, 36.3 mmol) is added to the flask slowly with a syringe at room temperature. The reaction mixture is stirred continuously during the addition of the hexamethyl-3 disilazane. An orange-colored precipitate immediately forms from the reaction mixture. Following a period of thorough agitation of the reaction mixture, the volatile materials are removed by evacuation, leaving about 6.31 grams of an orange-colored titanium-containing .
, 2~.~29~7 organometallic precursor powder. The precursor has a chemical composition represented by formula II.
E~ample 2 Preparation of Orqanometallic Prec~rsor The admixing procedure described in Example 1 is repeated, escepting that about 11.75 g (72.8 mmol) of hexamethyldisilazane is reacted with about 6.9 g 1n (36.2 mmol) of titanium tetrachloride. A yellow-orange precipitate forms from the reaction mixture. The reaction mi~ture is subsequently heated to about 70C for about two hours, cooled to room temperature, and the volatile components removed by evacuation resulting in about 7.60 g of a free flowing yellow powder. The yellow-colored titanium-containing organometallic precursor has a chemical composition represented by formula III.
ExamPle 3 Pre~aration of Oraanometallic Precursor The admixing procedure described in Example 1 is repeated, excepting that about 11.75 g (72.~ mmol) of hexamethyldisilazane is added to a solution of about 6.90 g (36.4 mmol) of titanium tetrachloride in about 130g of dichloromethane at a temperature of about -78C.
The reaction mixture which is initially clear, is allowed to warm slowly to about room temperature, during which a 3 yellow precipitate forms at about -20C. The precipitate is isolated as in Example 1 yielding about 7.86 g of a yellow-colored titanium-containing organometallic precursor powder having a chemical composition represented by formula III.
- 12 - 2~2~fi7 Example 4 PYrolysis of Oraanometallic Precursor A quantity of organometallic precursor prepared as in Example 1 is placad in a quartz tube connected to a system which maintains a nitrogen atmosphere within the tube. The precursor is slowly heated to about 600C and maintained at that temperature for about five hours.
During the heating procedure, the organometallic precursor experiences about a 30% weight loss in the 50C
to 100C range, and about an additional 37% weight loss in the 100C to 400C range. Volatile components given off during the heating procedure are identified as ammonia and ammonium chloride. Upon completion of the pyrolysis procedure, a black-colored powder remains which is indicated by X-ray powder diffraction analysis to be crystalline titanium nitride.
Exam~le 5 PyrolYsis of Oraanometallic Powder The procedure of Example 4 is repeated, exception that a quantity of organometallic precursor as obtained in Example 2 is used. Analysis of the resultant black-colored powder indicates that it is crystalline titanium nitrlde.
Exam~le 6 PyrolYsis of Oraanometallic Precursor A quantity of organometallic precursor prepared as in Example 1 is reacted with excess liquid ammonia, and the excess ammonia is allowed to evaporate.
Thereafter, the pyrolysis procedure described in Example 4 is repeated, resulting in a dark-olive-brown 2Q~2~67 material which is indicated by X-ray powder diffraction analysis to be crystalline titanium nitride.
ExamPle 8 Pvrolysis of Oraanometallic Precursor A quantity of organometallic precursor prepared as in Example 1 is pyrolyzed according to the procedure described in Example 4, excepting that an ammonia atmosphere is maintained within the tube. During the heating procedure, the organometallic precursor experiences about 12% weight loss in the 50C to 100C
range, and about an additional 37% weight loss in the 100C to 180C range. A golden-red-brown material is produced which by analysis is indicated to be crystalline titanium nitride.
Example 9 Pyrolysis of Oraanometallic Precursor The procedure of Example 8 is repeated, excepting that a quantity of organometallic precursor as obtained in Example 2 is used. Analysis of the resultant golden-red-brown material indicates that it is crystalline titanium nitride.
Example 10 Pvrolysis of Oraanometallic Precursor Deposited on a Substrate 3o Non-porous magnesium oxide single crystal substrates are prepared by burning magnesium turnings, and collecting the resultant magnesium oxide smoke particles. A solution of about 0.48 g of titanium tetrachloride in about 60 g of dichloromethane is ~052~67 prepared at a temperature of about -78C. Hexamethyl-disilazane (about 0.73 g~ is added to the titanium tetrachloride solution according to the procedure as described in Example 3. After warming the reaction mixture to about -20C, the magnesium oxide crystals (about 0.25 g) are added. The stirred reaction mixture is thereafter heated to about room temperature, and the volatile components removed by evacuation. Thus, magnesium oside particles coated with a yellow-colored titanium-containing organometallic precursor are formed.
The precursor coated magnesium oxide particles are thereafter pyrolyzed under an ammonia atmosphere at about 600C for about 4 hours, thereby producing crystalline titanium nitride coated magnesium oxide particles. X-ray powder diffraction analysis of the material indicates TiN and MgO in a ratio of about 1:4.
Example 11 Pv~olYsis of Oraanometallic Precu.sor p~posit~d o~ a Substrate Magnesium oxide substrate particles are prepared as described in Esample 10, and organometallic precursor is prepared as described in Esample 2. The magnesium oside particles ~about 0.25 g) are mixed with about 1.0 g of the organometallic precursor, and ground together in a mortar. The mixture is pyrolyzed at about 600C for about one hour under ammonia. The resultant sample is then heated to about l,000C for about four hours. X-ray 3 powder diffraction analysis indicates that the sample comprises crystalline TiN and MgO. It is observed that a large number of particles have joined together to form agglomerates.
2~2~7 These examples may be repeated with similar success by substituting the generically or specifically described reactants and/or reaction conditions recited herein for those used in the preceeding examples.
From the foregoing description, one skilled in the art can easily ascertain the essential characteristics of this invention, and witho~t departing from the spirit and scope thereof, can make various changes and modifications of the invention to adapt it to various usages and conditions.
3o .. . . .
PREPARATION OF TITANIUM NITRIDE
FROM O~GA~OMETALLIC PRECURSORS
FIELD OF THE INVENTION
This invention relates generally to the preparation of titanium nitride from organometallic -10 precursors. More particularly, the invention relates to pyrolyzable organometallic precursor materials and their preparation, and to the pyrolysis of said materials to produce titanium nitride and titanium nitride coated articles.
BACKGROUND OF THE INVENTION
Organometallic precursor processing has been used in recent years to prepare advanced materials such as titanium nitride, silicon carbide, silicon nitride, and boron nitride. This method has several advantages over classical techniques, e.g., relatively low temperature processing requirements, ease of control for maintaining high purity, and formability of the ultimately produced advanced material into fihers, coatings, films, etc. ~enerally, the organometallic precursors are transformed into the corresponding advanced materials by a pyrolytic process.
Titanium nitride is a particularly useful advanced material having several desirable properties such as, for example, a high melting point (2,950C3, high hardness (8-9 on the Moh scale), excellent strength (34,000 psi bending strength, and 141,000 psi compression strength), high thermal conductivity, and nonreactivity 2 2~2967 with a variety of other materials. Furthermore, it is unaffected by acids, excepting aqua regia; however, alkali compounds may cause its decomposition.
The conventional methods ~or preparing titanium nitride involve the high temperature reaction of a source of titanium such as, for e~ample, titanium tetrachloride or titanium metal, with a source of nitrogen such as, for example, ammonia or nitrogen.
It is known to prepare titanium nitride by the pyrolysis of a polymeric precursor formed by reacting ammonia with a titanium dialkylamide. See Brown, G. M. and Maya, L., "Ammonolysis Products of the Dialkylamides of Titanium, Zirconium, and Niobium as Precursors to Metal Nitrides,~ Journal of the American Ceramic Society, v. 71 ~1988) 78-82. Specifically, a titanium dialkylamide such as, for example, tetrakis(dimethylamido)titanium is reacted with liquid anhydrous ammonia to form an imido- or nitrido-bridged polymeric precursor having the general formula Ti3(NX2)(NH2)2N3, wherein X is an alkyl group.
Thereafter, the precursor is pyrolyzed in an ammonia atmosphere to prepare titanium nitride. During the initial staqes of the pyrolysis process, NHX2 and NH3 are released, forming a compound having the approximate composition Ti3N4. At a temperature of approximately 700C to 800C, additional nitrogen is released thereby forming partially crystalline titanium 3 nitride.
Also, it is known to prepare titanium nitride by the pyrolysis of a polymeric precursor formed by reacting tetrakis(dimethylamido)titanium with bifunctional amines. See Seyferth, D. and Miganani, G., "The 3 2~2967 Preparation of Titanium Nitride and Titanium Carbonitride by the Preceramic Polymer Route," Gov. Rep. Announce.
Index (US), v. 88 (1988) 827, 109. The publication discloses that tetrakis(dimethylamido)titanium is reacted with a diamine such as, for example, CH3NHCH2CH2NHCH3 to form a polymeric precursor which pyrolyzes under a stream of ammonia to give fairly pure titanium nitride.
Pyrolysis is carried out at a temperature of approximately 800C to 1,200C to form amorphous titanium nitride, which must thereafter be calcined at approsimately l,500C to form crystalline titanium nitride.
In light of the prior art, there is recognized a need for developing a process employing organometallic precursors which are pyrolyzed at lower temperatures to prepare crystalline titanium nitride.
In Bruger, H. and Wannagat, U., "Uber Titan--Stickstoff-Verbindungen, 2.Mitt.," Mh. Chem., Bd.
94 (1963) 761, a process is disclosed for reacting titanium tetrachloride with N,N-bis(trimethylsilyl)amine to produce an adduct, TiCl4-HN[Si(CH3)2]2. The publication does not teach nor suggest that the organometallic compound would be useful for preparing titanium nitride by a pyrolytic process.
Likewise, Andrianov, K. A., Astakhin, V. V., Kochkin, D. A., and Sukhanova, I. V., "Reaction of 3 Hexamethyldisilazane With Aluminum and Titanium Halides Method of Synthesizing Trialkylhalosilanes," Zh. Obsh.
Khim., v. 31, n. 10 (1961) 3,410 discloses a method for preparing trimethlyhalosilanes by reacting together an equimolar mixture of hexamethyldisilazane and a titanium halide such as, for example, titanium tetrachloride. The 2~52~7 authors describe the organometallic reaction byproduct as being NHTiCl2, but do not suggest that the material could be used to form titanium nitride by pyrolysis.
Finally, U.S. Patent No. 4,482,689 to Haluska discloses a process for preparing polymetallo(disily)-silazane polymers, which are useful in the preparation of ceramic materials by pyrolysis in an inert atmosphere or in a vacuum. Specifically, a chlorine-containing disilane, a disilazane such as, for example, hexamethyl-disilazane, and a metal halide such as, for example, titanium tetrachloride, are reacted together in an inert, essentially anhydrous atmosphere to produce a trialkyl-silylamino-containing metallosilazane polymer, which may thereafter be pyrolyzed at a temperature between 750C
and 1,200C to prepare an amorphous ceramic material containing titanium nitride.
It would be desirable to prepare organometallic precursors, by a simple process, which precursors could be pyrolyzed at lower temperatures than presently disclosed in the prior art, to produce crystalline titanium nitride.
It must be noted that the prior art referred to hereinabove has been collected and examined only in light of the present invention as a guide. It is not to be inferred that such diverse art would otherwise be assembled absent the motivation provided by the present invention, nor that the cited prior art when considered in combination suggests the present invention absent the teachings herein.
2~2~7 SUMMARY OF THE INVENTION
Accordant with the present invention, a process for preparing titanium nitride has surprisingly been discovered, comprising the steps of:
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and B) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
Moreover, the method for preparing titanium nitride has been found useful for coating substrates by a process, comprising the steps of:
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor;
B) applying the organometallic precursor to the surface of the substrate; and C) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
The ratio of titanium tetrachloride to disilazane may vary over a wide range, and result in the production of different titanium-containing 3 organometallic precursors. The reaction for preparing the precursor may be carried out in the presence of a solvent, and is generally conducted within a ternperature range from about -100C to about 100C. Pyrolysis of the organometallic precursors of the present invention occurs generally at temperatures at least about ~00C, in 20~2~67 contrast to pyrolysis reactions disclosed in the prior art which require temperatures in the range of 800C and greater.
The process of the present invention is useful for preparing titanium-containing organometallic precursors which are thereafter pyrolyzed to produce crystalline titanium nitride. The titanium nitride so produced is particularly suited for coating the surfaces of articles such as internal combustion engine components, to provide wear resistance and corrosion protection therefor.
DETAILED DESCRIPTION QF T~E PREFERRED EMBODIMENT
The present invention is directed to the preparation of titanium-containing organometallic precursors, and the subsequent pyrolysis of said precursors, to form titanium nitride. This novel process involves the reaction of a titanium tetrahalide and at least one disilazane to prepare an organometallic precursor, and the subsequent pyrolysis of said precursor to form titanium nitride.
The first reactant for use in preparing the organometallic precursors of the present invention is a titanium tetrahalide. Titanium tetrahalides are well known compounds to those ordinarily skilled in the chemical arts, and include TiCl4, TiBr4, TiF4, and 3 TiI4. A preferred titanium tetrahalide is titanium tetrachloride, which may be produced by heating a quantity of titanium dioxide or a titanium containing ore along with carbon while passing a stream of chlorine gas thereover. Details concerning the manufacture and characteristics of titanium tetrahalides are more fully 2052~7 set forth in the Kirk-Othmer Concise Encyclopedia of Chemical Technology, John Wiley & Sons, New York (1985) p. 1185-1186.
The second reactant for use in preparing the organometallic precursors according to the present invention is at lsast one disilazane having the general formula:
-R3SlNHSlR3 (I) wherein each R, independently, is hydrogen, a monovalent alkyl radical having 1-3 carbon atoms, phenyl, or a vinyl radical. Examples of contemplated equivalent disilazanes having the same operability and utility are, without limitation, (CHa)~SiNHSi(CH3)3, (C6H")(CH3)2SiNHSi(CH3)2(C6H~), ~CH2-CH)(CH3)2SiNHSi(CH3)2(CH=CH2), (C6H~,)(CH2-CH)(CH3)SiNHSi(CHa)(CH'CH2)(C6H~), (CH2DCH)(C6H~)2SiNHSi(C6H5)2(CH-CH2), (cH2~cH)(c2H~)2siNHsi(c2H5)2(cH=cH2)~
(CH2'CH)(C6H~)(C2H~)SiNHSi(C2H~)(C6H6)(CH-CH2), H(CHa)2SiNHSi(CHa)2H, H2(CHa)SiNHSi(CH3)H2, and H(C6H6)(CHa)SiNHSi(CHa)(C6H5)H. Mixtures of disilazanes may likewise conveniently be used for the second reactant. A preferred disilazane is hexamethyldisilazane.
Preparation of the titanium-containing organometallic precursors according to the present invention conveniently may be carried out by admixing the titanium tetrahalide and disilazane reactants under rigorously anhydrous conditions. The mixture of reactants may optionally includs a solvent which does not react with the titanium tetrahalide such as, for example, dichloromethane, carbon tetrachloride, toluene, benzene, pentane, hexane, etc. A preferred solvent is dichloromethane. The solvent may comprise up to about 80~ by weight of the reaction mixture. The ratio of titanium tetrachloride to disilazane employed in the reaction mixture may vary on a molar basis from about 1:0.5 to about 1:3. Preferably the ratio is from about l:l to about 1:2. The reaction is generally effected at temperatures in the range from about -100C to about 100C. Preferably, the reaction is carried out at about room temperature from about 20C to about 30C. The time required for complete reaction to occur is not sharply - critical, and may vary over wide limits from several minutes to several hours. Thus, the titanium-containing organometallic precursors form from the reaction mixture as a precipitate which may be vacuum stripped to prepare a free flowing powder prior to the pyrolysis operation.
While not wishing to be bound by any particular theory regarding the formation and composition of the titanium-containing organometallic precursors, it is believed that specific precursor compounds are generated, which are distinct based upon the ratio of starting reactants.
In the case where an equimolar mixture of a titanium tetrahalide and at least one disilazane are reacted together, mass balance calculations and infrared spectral analyses of the resultant organometallic precursor seem to suggest that the following imido-bridged structure is formed:
R3Si~NHTiZ2]XNHSiR3 (II) wherein R is as defined hereinabove, Z is a halo radical, and x is from about l to about 20. These structures may 20~2~67 g be highly crosslinked via interactions between halo and/or trimethylsilylamino bridges.
In a preferred embodiment of the present invention, wherein titanium tetrachloride is reacted with two molar equivalents of at least one disilazane, analysis suggests that the following diimido-bridged structure is formed:
R3SiNH(Ti~lNH)2NHSiR3 (III) wherein R is as defined hereinabove. These structures may initially crosslink via the formation of NH bridges, in combination with the loss of chlorotrimethylsilane.
Thereafter, further crosslinking may occur via bridging between chloro, amino, and/or trimethylsilylamino groups.
The titanium-containing organometallic percursors are separated from the reaction mixtures by conventional methods well known in the art, and thereafter pyrolyzed in an inert atmosphere, to form titanium nitride. The inert atmosphere may be, for example, ammonia, nitrogen, argon or mixtures thereof, or a vacuum. A preferred inert atmosphere is ammonla.
Pyrolysis of the organometallic precursors to form titanium nitride conveniently occurs at a temperature of at least about 600C, which is significantly below the temperatures disclosed in the prior art as useful for pyrolyzing titanium-containing polymeric precursors. The time required for complete pyrolysis may vary over wide limits, depending upon the rate at which the organometallic precursor is heated, from several minutes to several hours.
`` 2~2~67 The process for preparing titanium nitride according to the present invention is suitable for depositing a layer of titanium nitride onto a substrate.
The precursor may be applied to the surface of the substrate by any conventional method, such as by molding or casting, and thereafter pyrolyzed to form the titanium nitride coating.
Alternatively, a layer of the organometallic precursor may be formed on the surface of the substrate ffl causing the precursor to precipitate from the reaction solution and simultaneously deposit directly onto the substrate, after which the organometallic precursor is pyrolyzed to form the titanium nitride coating. Such coatings are advantageous, for example, for lining parts of apparatus such as internal combustion engine components to be protected against corrosion and oxidation at high temperatures. The resultant coatings are crystalline titanium nitride.
Example l ~L~E~ation of~ Q~ganometallic Precursor A 250 ml three-neck flask fitted with a condenser is charged with titanium tetrachloride (about 6.9 g, 36.3 mmol). Hexamethyldisilazane (about 5.87 g, 36.3 mmol) is added to the flask slowly with a syringe at room temperature. The reaction mixture is stirred continuously during the addition of the hexamethyl-3 disilazane. An orange-colored precipitate immediately forms from the reaction mixture. Following a period of thorough agitation of the reaction mixture, the volatile materials are removed by evacuation, leaving about 6.31 grams of an orange-colored titanium-containing .
, 2~.~29~7 organometallic precursor powder. The precursor has a chemical composition represented by formula II.
E~ample 2 Preparation of Orqanometallic Prec~rsor The admixing procedure described in Example 1 is repeated, escepting that about 11.75 g (72.8 mmol) of hexamethyldisilazane is reacted with about 6.9 g 1n (36.2 mmol) of titanium tetrachloride. A yellow-orange precipitate forms from the reaction mixture. The reaction mi~ture is subsequently heated to about 70C for about two hours, cooled to room temperature, and the volatile components removed by evacuation resulting in about 7.60 g of a free flowing yellow powder. The yellow-colored titanium-containing organometallic precursor has a chemical composition represented by formula III.
ExamPle 3 Pre~aration of Oraanometallic Precursor The admixing procedure described in Example 1 is repeated, excepting that about 11.75 g (72.~ mmol) of hexamethyldisilazane is added to a solution of about 6.90 g (36.4 mmol) of titanium tetrachloride in about 130g of dichloromethane at a temperature of about -78C.
The reaction mixture which is initially clear, is allowed to warm slowly to about room temperature, during which a 3 yellow precipitate forms at about -20C. The precipitate is isolated as in Example 1 yielding about 7.86 g of a yellow-colored titanium-containing organometallic precursor powder having a chemical composition represented by formula III.
- 12 - 2~2~fi7 Example 4 PYrolysis of Oraanometallic Precursor A quantity of organometallic precursor prepared as in Example 1 is placad in a quartz tube connected to a system which maintains a nitrogen atmosphere within the tube. The precursor is slowly heated to about 600C and maintained at that temperature for about five hours.
During the heating procedure, the organometallic precursor experiences about a 30% weight loss in the 50C
to 100C range, and about an additional 37% weight loss in the 100C to 400C range. Volatile components given off during the heating procedure are identified as ammonia and ammonium chloride. Upon completion of the pyrolysis procedure, a black-colored powder remains which is indicated by X-ray powder diffraction analysis to be crystalline titanium nitride.
Exam~le 5 PyrolYsis of Oraanometallic Powder The procedure of Example 4 is repeated, exception that a quantity of organometallic precursor as obtained in Example 2 is used. Analysis of the resultant black-colored powder indicates that it is crystalline titanium nitrlde.
Exam~le 6 PyrolYsis of Oraanometallic Precursor A quantity of organometallic precursor prepared as in Example 1 is reacted with excess liquid ammonia, and the excess ammonia is allowed to evaporate.
Thereafter, the pyrolysis procedure described in Example 4 is repeated, resulting in a dark-olive-brown 2Q~2~67 material which is indicated by X-ray powder diffraction analysis to be crystalline titanium nitride.
ExamPle 8 Pvrolysis of Oraanometallic Precursor A quantity of organometallic precursor prepared as in Example 1 is pyrolyzed according to the procedure described in Example 4, excepting that an ammonia atmosphere is maintained within the tube. During the heating procedure, the organometallic precursor experiences about 12% weight loss in the 50C to 100C
range, and about an additional 37% weight loss in the 100C to 180C range. A golden-red-brown material is produced which by analysis is indicated to be crystalline titanium nitride.
Example 9 Pyrolysis of Oraanometallic Precursor The procedure of Example 8 is repeated, excepting that a quantity of organometallic precursor as obtained in Example 2 is used. Analysis of the resultant golden-red-brown material indicates that it is crystalline titanium nitride.
Example 10 Pvrolysis of Oraanometallic Precursor Deposited on a Substrate 3o Non-porous magnesium oxide single crystal substrates are prepared by burning magnesium turnings, and collecting the resultant magnesium oxide smoke particles. A solution of about 0.48 g of titanium tetrachloride in about 60 g of dichloromethane is ~052~67 prepared at a temperature of about -78C. Hexamethyl-disilazane (about 0.73 g~ is added to the titanium tetrachloride solution according to the procedure as described in Example 3. After warming the reaction mixture to about -20C, the magnesium oxide crystals (about 0.25 g) are added. The stirred reaction mixture is thereafter heated to about room temperature, and the volatile components removed by evacuation. Thus, magnesium oside particles coated with a yellow-colored titanium-containing organometallic precursor are formed.
The precursor coated magnesium oxide particles are thereafter pyrolyzed under an ammonia atmosphere at about 600C for about 4 hours, thereby producing crystalline titanium nitride coated magnesium oxide particles. X-ray powder diffraction analysis of the material indicates TiN and MgO in a ratio of about 1:4.
Example 11 Pv~olYsis of Oraanometallic Precu.sor p~posit~d o~ a Substrate Magnesium oxide substrate particles are prepared as described in Esample 10, and organometallic precursor is prepared as described in Esample 2. The magnesium oside particles ~about 0.25 g) are mixed with about 1.0 g of the organometallic precursor, and ground together in a mortar. The mixture is pyrolyzed at about 600C for about one hour under ammonia. The resultant sample is then heated to about l,000C for about four hours. X-ray 3 powder diffraction analysis indicates that the sample comprises crystalline TiN and MgO. It is observed that a large number of particles have joined together to form agglomerates.
2~2~7 These examples may be repeated with similar success by substituting the generically or specifically described reactants and/or reaction conditions recited herein for those used in the preceeding examples.
From the foregoing description, one skilled in the art can easily ascertain the essential characteristics of this invention, and witho~t departing from the spirit and scope thereof, can make various changes and modifications of the invention to adapt it to various usages and conditions.
3o .. . . .
Claims (20)
1. A process for preparing titanium nitride, comprising the steps of:
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and B) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and B) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
2. The process for preparing titanium nitride according to Claim 1, wherein the titanium tetrahalide comprises titanium tetrachloride.
3. The process for preparing titanium nitride according to Claim 1, wherein the disilazane includes hexamethyldisilazane.
4. The process for preparing titanium nitride according to Claim 1, wherein the mole ratio of titanium tetrahalide to disilazane is from about 1:0.5 to about 1:3.
5. The process for preparing titanium nitride according to Claim 4, wherein the mole ratio is from about 1:1 to about 1:2.
6. The process for preparing titanium nitride according to Claim 1, wherein step A is conducted in the presence of a solvent.
7. The process for preparing titanium nitride according to Claim 1, wherein step A is conducted at a temperature from about -100°C to about 100°C.
8. The process for preparing titanium nitride according to Claim 1, wherein step B is conducted at a temperature of at least about 600°C.
9. A process for preparing titanium nitride, comprising the steps of:
A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100°C to about 100°C and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and B) heating the precursor to a temperature at least about 600°C and for a period of time sufficient to pyrolyze the precursor.
A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100°C to about 100°C and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and B) heating the precursor to a temperature at least about 600°C and for a period of time sufficient to pyrolyze the precursor.
10. A process for applying a layer of titanium nitride to a surface of a substrate, comprising the steps of:
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor;
B) applying the organometallic precursor to the surface of the substrate; and C) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor;
B) applying the organometallic precursor to the surface of the substrate; and C) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
11. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein the titanium tetrahalide comprises titanium tetrachloride.
12. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein the disilazane includes hexamethyldisilazane.
13. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein the mole ratio of titanium tetrahalide to disilazane is from about 1:0.5 to about 1:3.
14. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 13, wherein the mole ratio is from about 1:1 to about 1:2.
15. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein step A is conducted in the presence of a solvent.
16. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein step A is conducted at a temperature from about -100°C to about 100°C.
17. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein step B is conducted at a temperature of at least about 600°C.
18. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 10, wherein steps A and B are conducted simultaneously.
19. A process for applying a layer of titanium nitride to a surface of a substrate, comprising the steps of:
A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100°C to about 100°C and for a period of time sufficient to prepare a titanium-containing organometallic precursor;
B) applying the organometallic precursor to the surface of the substrate; and C) heating the precursor to a temperature of at least about 600°C and for a period of time sufficient to pyrolyze the precursor.
A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100°C to about 100°C and for a period of time sufficient to prepare a titanium-containing organometallic precursor;
B) applying the organometallic precursor to the surface of the substrate; and C) heating the precursor to a temperature of at least about 600°C and for a period of time sufficient to pyrolyze the precursor.
20. The process for applying a layer of titanium nitride to a surface of a substrate according to Claim 19, wherein steps A and B are conducted simultaneously.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/625,180 US5087593A (en) | 1990-12-10 | 1990-12-10 | Preparation of titanium nitride from organometallic precursors |
| US07/625,180 | 1990-12-10 |
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| Publication Number | Publication Date |
|---|---|
| CA2052967A1 true CA2052967A1 (en) | 1992-06-11 |
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| CA002052967A Abandoned CA2052967A1 (en) | 1990-12-10 | 1991-10-08 | Preparation of titanium nitride from organometallic precursors |
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| US (1) | US5087593A (en) |
| EP (1) | EP0490614B1 (en) |
| JP (1) | JP2978306B2 (en) |
| CA (1) | CA2052967A1 (en) |
| DE (1) | DE69117021T2 (en) |
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| US5192589A (en) * | 1991-09-05 | 1993-03-09 | Micron Technology, Inc. | Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
| US5571572A (en) * | 1991-09-05 | 1996-11-05 | Micron Technology, Inc. | Method of depositing titanium carbonitride films on semiconductor wafers |
| EP0546670B2 (en) * | 1991-12-13 | 2000-11-08 | Ford Motor Company Limited | Metal nitride films |
| US6081034A (en) | 1992-06-12 | 2000-06-27 | Micron Technology, Inc. | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
| US5350719A (en) * | 1992-11-06 | 1994-09-27 | Ford Motor Company | Preparation of titanium nitride-containing refractory material composites |
| FR2708924B1 (en) * | 1993-08-12 | 1995-10-20 | Saint Gobain Vitrage Int | Method of depositing a layer of metallic nitride on a transparent substrate. |
| US5856236A (en) | 1996-06-14 | 1999-01-05 | Micron Technology, Inc. | Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer |
| US7858518B2 (en) | 1998-04-07 | 2010-12-28 | Micron Technology, Inc. | Method for forming a selective contact and local interconnect in situ |
| DE19904378B4 (en) * | 1999-02-03 | 2006-10-05 | Osram Opto Semiconductors Gmbh | Process for producing nitride single crystals |
| US6967159B2 (en) * | 2002-08-28 | 2005-11-22 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using organic amines |
| US6995081B2 (en) * | 2002-08-28 | 2006-02-07 | Micron Technology, Inc. | Systems and methods for forming tantalum silicide layers |
| US6794284B2 (en) * | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
| US7521356B2 (en) * | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| US7799679B2 (en) * | 2008-06-24 | 2010-09-21 | Intel Corporation | Liquid phase molecular self-assembly for barrier deposition and structures formed thereby |
| US9231206B2 (en) * | 2013-09-13 | 2016-01-05 | Micron Technology, Inc. | Methods of forming a ferroelectric memory cell |
| CN104928656A (en) * | 2015-07-01 | 2015-09-23 | 西北工业大学 | Method for preparing titanium nitride film |
| CN110775949A (en) * | 2019-12-06 | 2020-02-11 | 济南大学 | Preparation method and application of titanium nitride nano material |
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| US4482689A (en) * | 1984-03-12 | 1984-11-13 | Dow Corning Corporation | Process for the preparation of polymetallo(disily)silazane polymers and the polymers therefrom |
| JPH0662776B2 (en) * | 1989-08-24 | 1994-08-17 | 信越化学工業株式会社 | Polytitanocarbosilazane polymer and method for producing ceramics using the polymer |
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- 1990-12-10 US US07/625,180 patent/US5087593A/en not_active Expired - Fee Related
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1991
- 1991-10-08 CA CA002052967A patent/CA2052967A1/en not_active Abandoned
- 1991-11-12 JP JP3295736A patent/JP2978306B2/en not_active Expired - Lifetime
- 1991-12-09 EP EP91311432A patent/EP0490614B1/en not_active Expired - Lifetime
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Also Published As
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|---|---|
| EP0490614A1 (en) | 1992-06-17 |
| JPH04265209A (en) | 1992-09-21 |
| EP0490614B1 (en) | 1996-02-07 |
| DE69117021D1 (en) | 1996-03-21 |
| JP2978306B2 (en) | 1999-11-15 |
| US5087593A (en) | 1992-02-11 |
| DE69117021T2 (en) | 1996-06-05 |
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