CA2083121A1 - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
CA2083121A1
CA2083121A1 CA2083121A CA2083121A CA2083121A1 CA 2083121 A1 CA2083121 A1 CA 2083121A1 CA 2083121 A CA2083121 A CA 2083121A CA 2083121 A CA2083121 A CA 2083121A CA 2083121 A1 CA2083121 A1 CA 2083121A1
Authority
CA
Canada
Prior art keywords
mirror
cavity
led
light emission
fabry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2083121A
Other languages
French (fr)
Other versions
CA2083121C (en
Inventor
Alfred Yi Cho
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Alfred Yi Cho
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
American Telephone And Telegraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alfred Yi Cho, Erdmann Frederick Schubert, Li-Wei Tu, George John Zydzik, American Telephone And Telegraph Company filed Critical Alfred Yi Cho
Publication of CA2083121A1 publication Critical patent/CA2083121A1/en
Application granted granted Critical
Publication of CA2083121C publication Critical patent/CA2083121C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure

Abstract

This invention embodies a LED in which an optical cavity of the LED, which includes an active layer (or region) and confining layers, is within a resonant Fabry-Perot cavity. The LED with the resonant cavity, hereinafter called Resonant Cavity LED or RCLED, has a higher spectral purity and higher light emission intensity relative to conventional LEDs. The Fabry-Perot cavity is formed by a highly reflective multilayer distributed Bragg reflector (DBR) mirror (RB ~ 0.99) and a mirror with a low to moderate reflectivity (RT ~ 0.25-0.99). The DBR
mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective top mirror above the active region leads to an unexpected improvement in directional light emission characteristics. The use of a Fabry-Perot resonant cavity formed by these two mirrors results in optical spontaneous light emission from the active region, which is restricted to the modes of the cavity. While the bottom DBR mirror reduces absorption by the substrate of that light portion which is emitted toward the substrate, the two mirrors of the resonant cavity reduce the isotropic emission and improve the light emission characteristics in terms of a more directed (anisotropic) emission.
CA002083121A 1991-12-27 1992-11-17 Light emitting diode Expired - Fee Related CA2083121C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/815,307 US5226053A (en) 1991-12-27 1991-12-27 Light emitting diode
US815,307 1991-12-27

Publications (2)

Publication Number Publication Date
CA2083121A1 true CA2083121A1 (en) 1993-06-28
CA2083121C CA2083121C (en) 1997-09-23

Family

ID=25217414

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002083121A Expired - Fee Related CA2083121C (en) 1991-12-27 1992-11-17 Light emitting diode

Country Status (7)

Country Link
US (1) US5226053A (en)
EP (1) EP0550963B1 (en)
JP (1) JPH05275739A (en)
KR (1) KR100254302B1 (en)
CA (1) CA2083121C (en)
DE (1) DE69214423T2 (en)
HK (1) HK220496A (en)

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Also Published As

Publication number Publication date
JPH05275739A (en) 1993-10-22
EP0550963A1 (en) 1993-07-14
EP0550963B1 (en) 1996-10-09
KR100254302B1 (en) 2000-05-01
DE69214423D1 (en) 1996-11-14
CA2083121C (en) 1997-09-23
US5226053A (en) 1993-07-06
DE69214423T2 (en) 1997-02-20
KR930015124A (en) 1993-07-23
HK220496A (en) 1997-01-03

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