CA2083122A1 - Optical devices with electron-beam evaporated multilayer mirror - Google Patents
Optical devices with electron-beam evaporated multilayer mirrorInfo
- Publication number
- CA2083122A1 CA2083122A1 CA2083122A CA2083122A CA2083122A1 CA 2083122 A1 CA2083122 A1 CA 2083122A1 CA 2083122 A CA2083122 A CA 2083122A CA 2083122 A CA2083122 A CA 2083122A CA 2083122 A1 CA2083122 A1 CA 2083122A1
- Authority
- CA
- Canada
- Prior art keywords
- refraction layer
- bsg
- zns
- gap
- index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000005388 borosilicate glass Substances 0.000 abstract 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 2
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Inorganic materials [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/815,311 US5206871A (en) | 1991-12-27 | 1991-12-27 | Optical devices with electron-beam evaporated multilayer mirror |
US815,311 | 1991-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2083122A1 true CA2083122A1 (en) | 1993-06-28 |
CA2083122C CA2083122C (en) | 1997-05-13 |
Family
ID=25217423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002083122A Expired - Fee Related CA2083122C (en) | 1991-12-27 | 1992-11-17 | Optical devices with electron-beam evaporated multilayer mirror |
Country Status (8)
Country | Link |
---|---|
US (1) | US5206871A (un) |
EP (1) | EP0549167B1 (un) |
JP (1) | JPH05251819A (un) |
KR (1) | KR0147857B1 (un) |
CA (1) | CA2083122C (un) |
DE (1) | DE69209630T2 (un) |
HK (1) | HK146096A (un) |
TW (1) | TW263626B (un) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408105A (en) * | 1992-02-19 | 1995-04-18 | Matsushita Electric Industrial Co., Ltd. | Optoelectronic semiconductor device with mesa |
US5256596A (en) * | 1992-03-26 | 1993-10-26 | Motorola, Inc. | Top emitting VCSEL with implant |
US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
US5513202A (en) * | 1994-02-25 | 1996-04-30 | Matsushita Electric Industrial Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser |
US5557626A (en) * | 1994-06-15 | 1996-09-17 | Motorola | Patterned mirror VCSEL with adjustable selective etch region |
JP2891133B2 (ja) * | 1994-10-24 | 1999-05-17 | 日本電気株式会社 | 面発光レーザ及び面発光レーザアレイ及び光情報処理装置 |
US5654228A (en) * | 1995-03-17 | 1997-08-05 | Motorola | VCSEL having a self-aligned heat sink and method of making |
JPH0945963A (ja) * | 1995-07-31 | 1997-02-14 | Eiko Eng:Kk | GaN系半導体装置 |
DE69610610T2 (de) * | 1995-12-26 | 2001-05-03 | Nippon Telegraph & Telephone | Oberflächenemittierender Laser mit vertikalem Resonator und Verfahren zu seiner Herstellung |
US6169756B1 (en) | 1997-12-23 | 2001-01-02 | Lucent Technologies Inc. | Vertical cavity surface-emitting laser with optical guide and current aperture |
US6044100A (en) * | 1997-12-23 | 2000-03-28 | Lucent Technologies Inc. | Lateral injection VCSEL |
US6208680B1 (en) | 1997-12-23 | 2001-03-27 | Lucent Technologies Inc. | Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors |
US5960024A (en) | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
US6614821B1 (en) * | 1999-08-04 | 2003-09-02 | Ricoh Company, Ltd. | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
US6577658B1 (en) | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
NL1015714C2 (nl) * | 2000-07-14 | 2002-01-15 | Dsm Nv | Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur. |
US6636544B2 (en) | 2000-12-06 | 2003-10-21 | Applied Optoelectronics, Inc. | Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays |
US6696307B2 (en) | 2000-12-06 | 2004-02-24 | Applied Optoelectronics, Inc. | Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays |
US6724796B2 (en) * | 2000-12-06 | 2004-04-20 | Applied Optoelectronics, Inc. | Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control |
EP1298461A1 (en) * | 2001-09-27 | 2003-04-02 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR |
DE10208171A1 (de) * | 2002-02-26 | 2003-09-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür |
US6897131B2 (en) * | 2002-09-20 | 2005-05-24 | Applied Materials, Inc. | Advances in spike anneal processes for ultra shallow junctions |
DE10244447B4 (de) * | 2002-09-24 | 2006-06-14 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür |
US6839507B2 (en) * | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
US7126160B2 (en) * | 2004-06-18 | 2006-10-24 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
US7119377B2 (en) * | 2004-06-18 | 2006-10-10 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
US7627017B2 (en) * | 2006-08-25 | 2009-12-01 | Stc. Unm | Laser amplifier and method of making the same |
US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
CN110212409A (zh) * | 2019-05-31 | 2019-09-06 | 度亘激光技术(苏州)有限公司 | 基于GaAs衬底的分布布拉格反射镜的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1382401A (en) * | 1973-02-13 | 1975-01-29 | Inst Poluprovodnikov | Solid state laser |
US3984581A (en) * | 1973-02-28 | 1976-10-05 | Carl Zeiss-Stiftung | Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers |
JPS6064843A (ja) * | 1983-09-19 | 1985-04-13 | 株式会社豊田中央研究所 | 熱線遮蔽積層体 |
JPS6179280A (ja) * | 1984-09-27 | 1986-04-22 | Agency Of Ind Science & Technol | 面発光型半導体レ−ザ装置及びその製造方法 |
JPS63245984A (ja) * | 1987-04-01 | 1988-10-13 | Seiko Epson Corp | 半導体発光素子及びその製造方法 |
US5018157A (en) * | 1990-01-30 | 1991-05-21 | At&T Bell Laboratories | Vertical cavity semiconductor lasers |
US5068868A (en) * | 1990-05-21 | 1991-11-26 | At&T Bell Laboratories | Vertical cavity surface emitting lasers with electrically conducting mirrors |
-
1991
- 1991-12-27 US US07/815,311 patent/US5206871A/en not_active Expired - Lifetime
-
1992
- 1992-05-26 TW TW081104103A patent/TW263626B/zh active
- 1992-11-17 CA CA002083122A patent/CA2083122C/en not_active Expired - Fee Related
- 1992-12-04 DE DE69209630T patent/DE69209630T2/de not_active Expired - Fee Related
- 1992-12-04 EP EP92311091A patent/EP0549167B1/en not_active Expired - Lifetime
- 1992-12-22 JP JP4341862A patent/JPH05251819A/ja active Pending
- 1992-12-24 KR KR1019920025378A patent/KR0147857B1/ko not_active IP Right Cessation
-
1996
- 1996-08-01 HK HK146096A patent/HK146096A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW263626B (un) | 1995-11-21 |
KR930015234A (ko) | 1993-07-24 |
KR0147857B1 (ko) | 1998-11-02 |
EP0549167B1 (en) | 1996-04-03 |
CA2083122C (en) | 1997-05-13 |
HK146096A (en) | 1996-08-09 |
DE69209630T2 (de) | 1996-08-22 |
DE69209630D1 (de) | 1996-05-09 |
US5206871A (en) | 1993-04-27 |
EP0549167A2 (en) | 1993-06-30 |
EP0549167A3 (en) | 1993-08-25 |
JPH05251819A (ja) | 1993-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2083122A1 (en) | Optical devices with electron-beam evaporated multilayer mirror | |
US4765715A (en) | Beam splitter having a partial semitransparent layer assigned to a plurality of outgoing light beams | |
US4317086A (en) | Passivation and reflector structure for electroluminescent devices | |
US6529327B1 (en) | Partly reflecting optical component and laser source incorporating such a component | |
EP0361399A3 (en) | Semmiconductor laser array including lasers with reflecting means having different wavelength selection properties | |
AU7471000A (en) | Coupled cavity anti-guided vertical cavity surface emitting laser (vcsel) | |
AU3479993A (en) | Vertical-cavity surface emitting laser optical interconnect technology | |
CN1405938A (zh) | 通过形成绝缘叠层对表面发射激光器进行横模和偏振控制 | |
WO1998050989A9 (en) | Organic lasers | |
EP0372438A2 (en) | UV and plasma stable high-reflectance multilayer dielectric mirror | |
EP0376327A3 (en) | Optical recording medium | |
EP0375216A3 (en) | Optically pumped lasers | |
US7323114B2 (en) | Method of making optical elements for an optical disc system | |
CA2015482A1 (en) | Optical system including wavelength tunable semiconductor laser | |
US20020118721A1 (en) | Method and apparatus for optimizing the output beam characteristics of a laser | |
Zhongming et al. | Optical devices with electron-beam evaporated multilayer mirror | |
US5621832A (en) | Beam splitter and optical coupler using the same | |
JPS6435502A (en) | Reflecting mirror made of multi-layered films | |
JPH0855357A (ja) | 半導体レーザ装置 | |
JP3315494B2 (ja) | 反射膜 | |
JPS6354235B2 (un) | ||
KR100387240B1 (ko) | 공기층을 포함하는 반사막을 이용한 레이저 다이오드 및그 제조 방법 | |
JPS6419787A (en) | Semiconductor laser | |
JP2666086B2 (ja) | 半導体レーザ装置 | |
JP2002118322A (ja) | 高反射率被膜を含む光デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |