CA2083122A1 - Optical devices with electron-beam evaporated multilayer mirror - Google Patents

Optical devices with electron-beam evaporated multilayer mirror

Info

Publication number
CA2083122A1
CA2083122A1 CA2083122A CA2083122A CA2083122A1 CA 2083122 A1 CA2083122 A1 CA 2083122A1 CA 2083122 A CA2083122 A CA 2083122A CA 2083122 A CA2083122 A CA 2083122A CA 2083122 A1 CA2083122 A1 CA 2083122A1
Authority
CA
Canada
Prior art keywords
refraction layer
bsg
zns
gap
index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2083122A
Other languages
French (fr)
Other versions
CA2083122C (en
Inventor
Dennis Glenn Deppe
Niloy Kumar Dutta
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Dennis Glenn Deppe
Niloy Kumar Dutta
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
American Telephone And Telegraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dennis Glenn Deppe, Niloy Kumar Dutta, Erdmann Frederick Schubert, Li-Wei Tu, George John Zydzik, American Telephone And Telegraph Company filed Critical Dennis Glenn Deppe
Publication of CA2083122A1 publication Critical patent/CA2083122A1/en
Application granted granted Critical
Publication of CA2083122C publication Critical patent/CA2083122C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

Abstract

This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF2, MgF2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.
CA002083122A 1991-12-27 1992-11-17 Optical devices with electron-beam evaporated multilayer mirror Expired - Fee Related CA2083122C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/815,311 US5206871A (en) 1991-12-27 1991-12-27 Optical devices with electron-beam evaporated multilayer mirror
US815,311 1991-12-27

Publications (2)

Publication Number Publication Date
CA2083122A1 true CA2083122A1 (en) 1993-06-28
CA2083122C CA2083122C (en) 1997-05-13

Family

ID=25217423

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002083122A Expired - Fee Related CA2083122C (en) 1991-12-27 1992-11-17 Optical devices with electron-beam evaporated multilayer mirror

Country Status (8)

Country Link
US (1) US5206871A (en)
EP (1) EP0549167B1 (en)
JP (1) JPH05251819A (en)
KR (1) KR0147857B1 (en)
CA (1) CA2083122C (en)
DE (1) DE69209630T2 (en)
HK (1) HK146096A (en)
TW (1) TW263626B (en)

Families Citing this family (41)

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US5408105A (en) * 1992-02-19 1995-04-18 Matsushita Electric Industrial Co., Ltd. Optoelectronic semiconductor device with mesa
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5258316A (en) * 1992-03-26 1993-11-02 Motorola, Inc. Patterened mirror vertical cavity surface emitting laser
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5557626A (en) * 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
JP2891133B2 (en) * 1994-10-24 1999-05-17 日本電気株式会社 Surface emitting laser, surface emitting laser array, and optical information processing device
US5654228A (en) * 1995-03-17 1997-08-05 Motorola VCSEL having a self-aligned heat sink and method of making
JPH0945963A (en) * 1995-07-31 1997-02-14 Eiko Eng:Kk Gan based semiconductor device
DE69610610T2 (en) * 1995-12-26 2001-05-03 Nippon Telegraph & Telephone Vertical cavity surface emitting laser and method of manufacturing the same
US6169756B1 (en) 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6044100A (en) * 1997-12-23 2000-03-28 Lucent Technologies Inc. Lateral injection VCSEL
US6208680B1 (en) 1997-12-23 2001-03-27 Lucent Technologies Inc. Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6614821B1 (en) * 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (en) * 2000-07-14 2002-01-15 Dsm Nv Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid.
US6636544B2 (en) 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
US6696307B2 (en) 2000-12-06 2004-02-24 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
US6724796B2 (en) * 2000-12-06 2004-04-20 Applied Optoelectronics, Inc. Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
DE10208171A1 (en) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with a vertical emission direction and production method therefor
US6897131B2 (en) * 2002-09-20 2005-05-24 Applied Materials, Inc. Advances in spike anneal processes for ultra shallow junctions
DE10244447B4 (en) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor device with vertical emission direction and manufacturing method thereof
US6839507B2 (en) * 2002-10-07 2005-01-04 Applied Materials, Inc. Black reflector plate
US7126160B2 (en) * 2004-06-18 2006-10-24 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7119377B2 (en) * 2004-06-18 2006-10-10 3M Innovative Properties Company II-VI/III-V layered construction on InP substrate
US7627017B2 (en) * 2006-08-25 2009-12-01 Stc. Unm Laser amplifier and method of making the same
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
CN110212409A (en) * 2019-05-31 2019-09-06 度亘激光技术（苏州）有限公司 The preparation method of distribution Bragg reflector based on GaAs substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1382401A (en) * 1973-02-13 1975-01-29 Inst Poluprovodnikov Solid state laser
US3984581A (en) * 1973-02-28 1976-10-05 Carl Zeiss-Stiftung Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers
JPS6064843A (en) * 1983-09-19 1985-04-13 株式会社豊田中央研究所 Heat-wave shielding laminate
JPS6179280A (en) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol Surface light-emitting type semiconductor laser device and manufacture thereof
JPS63245984A (en) * 1987-04-01 1988-10-13 Seiko Epson Corp Semiconductor light emitting element and manufacture thereof
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors

Also Published As

Publication number Publication date
TW263626B (en) 1995-11-21
KR930015234A (en) 1993-07-24
KR0147857B1 (en) 1998-11-02
EP0549167B1 (en) 1996-04-03
CA2083122C (en) 1997-05-13
HK146096A (en) 1996-08-09
DE69209630T2 (en) 1996-08-22
DE69209630D1 (en) 1996-05-09
US5206871A (en) 1993-04-27
EP0549167A2 (en) 1993-06-30
EP0549167A3 (en) 1993-08-25
JPH05251819A (en) 1993-09-28

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