CA2131465A1 - Integrated solid state light emitting and detecting array and apparatus employing said array - Google Patents

Integrated solid state light emitting and detecting array and apparatus employing said array

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Publication number
CA2131465A1
CA2131465A1 CA002131465A CA2131465A CA2131465A1 CA 2131465 A1 CA2131465 A1 CA 2131465A1 CA 002131465 A CA002131465 A CA 002131465A CA 2131465 A CA2131465 A CA 2131465A CA 2131465 A1 CA2131465 A1 CA 2131465A1
Authority
CA
Canada
Prior art keywords
light
diodes
solid state
diode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002131465A
Other languages
French (fr)
Inventor
William H. Havens
Charles M. Hammond, Jr.
Jeffery B. Powers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Welch Allyn Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2131465A1 publication Critical patent/CA2131465A1/en
Abandoned legal-status Critical Current

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10544Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation by scanning of the records by radiation in the optical part of the electromagnetic spectrum
    • G06K7/10821Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation by scanning of the records by radiation in the optical part of the electromagnetic spectrum further details of bar or optical code scanning devices
    • G06K7/10831Arrangement of optical elements, e.g. lenses, mirrors, prisms
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10544Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation by scanning of the records by radiation in the optical part of the electromagnetic spectrum
    • G06K7/10712Fixed beam scanning
    • G06K7/10722Photodetector array or CCD scanning
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10544Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation by scanning of the records by radiation in the optical part of the electromagnetic spectrum
    • G06K7/10712Fixed beam scanning
    • G06K7/10722Photodetector array or CCD scanning
    • G06K7/10732Light sources
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/10Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
    • G06K7/10544Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation by scanning of the records by radiation in the optical part of the electromagnetic spectrum
    • G06K7/10821Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation by scanning of the records by radiation in the optical part of the electromagnetic spectrum further details of bar or optical code scanning devices
    • G06K7/10841Particularities of the light-sensitive elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

There is provided an integrated semiconductor source-detector matrix (10) in which solid state photonic diodes (12a-12i) are configured as LEDs, disposed on a substrate and coupled to electronic circuits so that the diodes can be individually driven to emit light to detect light as may be desired. Providing an integrated matrix (10) of light source and light sensor units disposed in close proximity results in each unit having nearly coextensive fields of view and illumination (157). Apparatus, such as bar code and optical readers utilizing such a matrix are shown, and are insensitive to the diffusion and laminate effects. In alternate embodiments the matrix (10) is coupled to remote sensors (94) or another similar matrix to provide optical communication and interchange devices having high bandwidth.

Description

213146S P~T/US 9 3 / O - 4 2 0 -03 Rec'd PCT/PTO 3 ~ M~R t994 INTEGRATED SOLID STATE LIGHT EMITTING AND DETECTING
ARRAY AND APPARATUS EMPLOYING SAID ARR~Y
This invention relates to a matrix of integrated semiconductor elements that are operable in either a photoresponsive or photoemissive mode. The present inven-tion is particularly adapted to improving the performance of optical interfaces, optical transmitters, and image detecting apparatus such as bar code scanners or readers, optical heads, and other optical scanners that can be portable and are required to operate with low power consumption.
10In conventional mark-sense and imaging apparatus, the light source~and light sensor are discrete and have optical paths which generally are not congruent in space.
Such an arrangement provides a field of illumination that includes optical patteIns of interest, the indicia, but which in general is larger than the light detector~s field o~ ~iew ~termed herein~the detector~s region of sensitivi-` ty). The light sensor~generates a signal that is specifi-ally responsive to li~gh~ from the region of sensitivity that is incident on the light sensor.
` 20When the field of illumination is larger than the :. ~
reg1on of sensitivity, fIood illumination is said to be present;. In thi~ circumstance the process of accurately interpreting the information content of the indicia being scanned is interfered with, as will now be explained.
.
25In~FIG. ll~there is illustrated a typical prior art device wherein LEDs~121, 121 illuminate a field of illumi-nation 124 on target 123. A region of sensitivity 122, being smaller than field of illumination 124, is entirely included within field of illumination 124. The region of 30sensitivity 122 is viewed by light sensor 127 through optics 125, with field stop aperture 143 and presents a ~;~ signal to amplifier 129 in response to detected light.
Mark-sense detectors are typically employed in optical scanning devices, such as bar code scanners or ;

A~IENDED SHEET

2131~65 PCT/US9 3/0 1 4 2 o O? R~9.~t P~TJPTn ~ n ~ qof readers, in which the output of the detector may be coupled to decoding circuitry. There are a nu~ber of known optical effec~s that can produce errors in the determina-tion of transitions ~etween bars and spaces in a bar code symbol that is situated on a substrate, including the diffusion and laminate effects.
The diffusion effect can be understood with refer-ence tO FIGS. 12a and 12~. It results from light, shown representatively as beams 126, that is incident outside the region of sensitivity 122 of a light sensor. Beams 126 enter the substrate 138 on which a pattern is located, and are then scattered internally within the substrate into the region of sensitivity. A fraction of the scattered light is thus ultimately returned to the light sensor via region of sensitivity 122 where it contributes to the re;c~ived signal level. In scanning applications such as bar code scanning there is another consequence of the diffusion effect. In this application the region of sensi-tivity travels acros~ dark bars that are separated by 20~ fields of light spaces~. These spaces are referred to herein as white spaces; however those skilled in the art will understand~ that ~areas of high xeflectivity are ` denoted. As the region of sensitivi~y 122 approaches a j dar~ bar 139, a~s shown in FIG. 12b, the bar 139 will 2~5 ~ absorb~ more~ light than does a white space of similar dimension. Since~ some~ light 128 is absorbed, less is available to scatter into the approaching region of sensi-tivity. Thus the~diffusion effect differs quantitatively when a bar is near the region o~ sensitivity than when it ~ 30 is not. This can be appreciated with reference to FIG. 13 ;~ which shows an analog waveform 130 generated by a bar code scanner utilizing flood illumination which has scanned bar - ~ code symbol 132. It Will be apparent that the signal ; minima 137 corresponding to the wide dark bars are quite sharp, while the maxima 135 corresponding to the interven--~ ing white spaces are rounded. Furthermore the peaks 136 213116~ PCT/US9 3 / O 1 4 2 o 03 Rec'd PCT/PTO 3 0 MAR 1994 corresponding to the narrow white spaces between the narrow dark bars 134 are reduced in amplitude relative to maxima 135 corresponding to wide white spaces between the wide dark bars 137. This appearance is predicted by the above discussion of the diffusion effect. If the narrow dark bars could not be resolved due to the modulation transfer function of the reader optical system, the patterns would have been symmetrical about the maxima and minima. While the diffusion effect has been explained in connection with a bar code scanner, it also influences other non-scanning readers of optical patterns as well. In summary, the diffusion effect tends to reduce the apparent :
white level in the vicinity of dark bars while not affect-ing the black level.
15Another undesired effect of flood illumination in certain imaging applications, such as bar code scanning, is the laminate effect, also known as the overlay effect.
Practical bar code symbols often possess protective ~ overlaminates. The laminate effect is caused by the light ; 20 that is scattered from outside the region of sensitivity :: :
bein~ totally internally reflec~ed at the overlaminate-to-air interface onto ~he region of sensitivity. Reference ; may be made to FIG~.~14 where the laminate effect is depicted diagrammatically. During the lamination process an adhesive flows~over the bar code symbol su~strate 142, expelling the air between laminate 141 and bar code symbol substrate 142. As a result, the laminate 141 and bar code ~ symbol substrate 142 are in intimate contact and are ;~ essentially index matched. When the laminated bar code substrate is illuminated, as with ~he diffusion effect, ~ ~ some of the incident light rays, such as rays 226a, 226b ;~ falling outside the region of sensitivity 122 are scat-tered from the top surface of layer 142 into overlaminate 141 and are incident on surface 227 at an angle 144 that can exceed the critical angle for total internal reflec-tion. Such light rays 226a, 226b are totally internally ~ .
n ~
J

2131~65 PCT/US9 3 / O 1 4 2 -O
0~ Rec'd PGTIPTO 3 0 M~R 1994 reflected into the region of sensitivity 122. A portion of this light is then scattered back toward the overlaminate 141, penetrates it, and finally arrives at the light sensor, where it contributes to the received signal level.
As in the case of the diffusion effect, as the region of sensitivity passes over the bar code symbol, some of the incident light will be absorbed by dark bars adjacent to the region of sensiti~ity, thereby reducing the white space signal level. The magnitude of the laminate effect is a function of laminate thickness, the dimenæions of the bar code symbol, reflectance of the bars and spaces, nominal diffusion length in the substrate, and refractive index. While laminate effects are sometimes difficult to quantify, the range of this Pffect can be quite large. The laminate and diffusion effects are known to degrade the performance of bar code scanners, other types of ~mark-sense detectors, and image detecting apparatus generally.
A laminated bar code sy~bol typically exhibits both the diffusion and~the laminate effects.
It will be recognized that an analogous argumen~
can be made for the case where a small source of illumina-tion is used in~conjl~nction with a large region of sensi-tiv~ity, so called flood sensitivity. A number of methods have been employed in the~prior art that tend to bring the beams of light from the light source and those directed to the light sensor from the target into alignment, estab-lishing a common operational region. The imageæ of the light ~source and the defined region of sensiti~ity are generally not congruent throughout a relatively large depth of field. For this reason, all these systems are sensitive to the degrading effects of the diffusion and laminate effects over all or most of their operational depth of field.
Another problem known to the art concerns the operation of imaging devices when there is ambient lis?ht that enters the light sensor and creates additional noise 2131g6j PCT/US 9 3 / O î 4 2 O
03 Rec'd PCTJPT~ 3 0 MAR 1994 background. This problem has been mitigated by the adop-tion of lasers and LEDs as light sources or light emitters that cooperate with light sensors tailored to respond selectively to wa~elengths emitted by the lasers or LEDs in conjunction with appropriate~bandpass filters. Repre-sentative of this approach is the disclosure of U.S. Pat.
No. 4,866,258 to Ueda et al wherein an optical pattern detector employs a photodiode disposed side-by-side with an LED.
Still another problem in the art which can be at-tacked by optoelectronic source-detector integration is the well-known problem of microphonic excitation that can cause spurious output of the light sensor. The severity of this problem is lessened when the photodetection system has an inherently high signal-to-noise ratio as does an ~- in~egrated source-detector.
There has been recent interest in developing image detection and scanning devices having light sources integrated with~light sensors such as photodiodes. Manu-facture of large area integrated semiconductor arrays isnow re1atively economical.
Techniques of fabricating small light sensing elements and liqht emitting ~e;lements~ on large area substrates are known.~ The integration of densely packed minute surface emitting lasers on~a substrate using lithographic tech-niques~was reported in by D. Maliniak, Electronic Desian", Aug 24, 1989, pagè~19~ Such lasers are not only physically small, but also operat~e with low power dissipation.
In U.S. Pat~. No. 4,695,859 to Guha et al there is disclosed a large scale integrated solid state structure , that includes light emitting and light sensing p-i-n diodes, used in document scanning app~ications. In this disclosure the construction of the light sources and light sensors are simi~lar, but the details are optimized for their respective functions.
: :

:~
A~NDED~rrrT

2131465 PCTIUS~ 3 ~ O ~ 4 2 0 6 03 Rec'd PCT/r~iiQ 3 ~ MQR ~994 The use of integrated optoelectronic source-detec-tor technology in imaging applications has thus far been limited. Successful implementation of such components into scanning and imaging devices would advance the optical reading art, as a result of enhanced resolution, increased reading speed, increased accuracy and reduced power consumption. Such devices have broader application to optical information transmission in that they can be incorporated in optical tracking applica ions as well as optical interfaces of all types, and could be used in optical computers.
It is therefore a primary object of the present invention to provide an improved optoelectronic integrated source-detector matrix that can be economically fabricated on a large area substrate from semiconductor alloy materi-als.
It is another object of the present invention to improve the performance of optical detectors and scanning devices by incorporating therein an improved integrated ~; 20 source-detector matrix.
It is yet another object of the present invention to perform improved optical image detection in a large working depth of~field without flood illuminating the ;~ subiect image. ~
~It i3 still another obiect of the present in~ention to provide optical detectors utilizing therein an improved integrated s~ource~-detector matrix that operates accurately ~ with a low level of illumination current.
; These and other objects of the present invention are attained in a~preferred embodiment by a plurality of identically fabricated solid state photonic diodes that are configured as LEDs, disposed on a substrate and coupled to electronic circuits so that the diodes can be individually driven to emit light or to detect light as ~35 may be desired, thereby creating an integrated source-; ~detector matrix. The term llphotonic" is used generically AMENDED SnEE~~~

2131~5 ~C~Sg 3~
7 03 Rec'd P~,~ O ~IAR 1994 herein to include both light emission and light detection functions of which such LEDS are capable. In some cases, light emitting diodes can be used to detect their own wavelengths of light. The LEDs are electrically and L, optically isolated. Several manufacturers have LED die fabrication processes which could be used to fabricate such devices. For example, the process used by Siemens Components, Inc. to fabricate the die for the "RB-42B, MASK-DIFFUSED GaAsP LED", or by Stanley Electric Co., Ltd.
to fabricate their "ESBR 3402" LEDs, as well as many others.
Providing a matrix of light source ~emitter) and light sensor units dispos`ed in close proximity results in each unit having nearly coextensive fields of view and illumination. Because the light source and liqht sensor are so closely associated, and can be realized as inter-mingled elements, it is possible to establish a small, precisely aligned field~of view and illumination on a target. An image being so viewed is not flood illuminated.
T~us a device~incorporating an integrated source-detector is relatively insensitive to the abové noted diffusion and laminate effects,~ and its ability to detect boundaries of indicia is consequently enhanced. By overlapping the fields of view in neighboring units within the array or matrix, it is possible to spatially smooth or effectively defocus a detected image, as may be desirable in certain ; imaging applications. The advantages of dealing with a smoothed or slightly defocused image are further explained in U.S. Pat. No. 4~,591,706 to Sims.
The use of semiconductor devices assures relatively : 1QW power consumption. As aforementioned, when semiconductive materials are employed in the construction of source-detector arrays it is possible to design the elements to emit only desired wavelengths of light, and to selectively respond to the emitted wavelengths. This light filtering effect can be exploited to achieve even greater , j -~` 2131~6~ US93/01420 8 ~;3 ~;r~rq ~ o M~R l99 noise rejection so that the instrument can operate suc-cessfully under high ambient light conditions. AS a conse-quence of greater signal-to-noise ratio and improved edge detection capability, the device can consequently operate at a more rapid scanning rate.
In one embodiment an economic advanta~e is realized by constructing the emitting and detecting diodes identi-cally as LEDs. Such LEDs are sufficiently photoemissive and photosensitiYe to function in optical imaging and transmission applications.
Suitable optics can associate the output of an individual emitter with the field of view of a given detecting element. By configuring the electronic circui~-ry, groups of diodes can be functionally grouped as deæired, so that they function in subunits within the integrated source-detector matrix. For example, as shown in the embodiment of FIG. 7, emitters and detectors can be associated in one-to-one relationship in ~hecker-board ~ fashion, an arrangement that would result in the realiza-;~ 20 tion of a large numher of optical communication channels on such an integrated source-detector matrix. There are ~;~ many other geometric grouping possibilities that are not limited to one-to-one associations between light sources lemitters) and sensors (detector~). By incorporating . ~ ~
suitable electronic circuitry into the structure, it is possible to configure and optimize an integrated source-detector matrix for a qiven optical application, and even to dynamically vary the configuration as required. Parame-ters such as sensitivity, noise, cross-communication due to optical coupling and/or reflections, error detection and correction govern the grouping and ratios of emitters ; and detectors in optical imaging applications such as bar code scanning.
In another embodiment of the invention the inte-grated source-detector matrix can be incorporated into a ~ instrument such as a bar code scanner, where it functions :: .
' AM~A'DEDSHE'-;:

?CT/US 9 3 ~ O î 4 2 0 2131 4d~35P~ r- ~ 3 ~ ~IAR t99~

as both the light source and the light sensor. By incor-porating suitable optics, such as lenses or optical fibers into the scanner, a subunit of one or more light sources can be caused to illuminate a small field on a surface that contains indicia, and the light sensors can be configured so that their region of sensitivity corresponds or is placed in close proximity to the field of illumina tion. As long as the matrix dimensions on the object plane are comparable or less than the diffusion lengths in the indicia substrate the diffusion and laminate effects discussed above can be largely eliminated. Furthermore, by fabricating the semiconductors so that their emission and absorption spectra are appropriately tailored to the application, unwanted ambient light can be effectively filtered so that the instrument operates with a improved signal-to-noise ~ratio. The regions of sensitivity of adjacent subunits may overlap if desired, so that a slightly defocused image can be detected by the instru-ment.
In a variant of the scanning embodiment discussed above, concentric zones of the integrated source-detector ::
matrix are selectively enabled and disabled. This causes the scanning aperture~of the instrument to vary, so that the instrument can be optimized to read indicia using various effective spot~ sizes.
In still another embodiment, two or more matrices are optically coupled, so that optical information can be : ~ :
transmitted therebetween, and repeated with a high band-width and low error rate.
In a still further embodiment, the photonic ele-ments are coupled to fiber optic waveguides, and light can be communicated to and from remote optoelectronic devices or sensors. In this embodiment, shown at FIG. 8, an integrated matrix according to the invention is placed in a machine to be monitored, such as an aircraft, and is coupled to remote sensors that produce optical signals in r`~ ,r `~ ` ~ ~
' ` 2131~6S r'CT/US~ 3 / O l 4 2 0 0 ~,~ R~.'.? P.~F)TQ 3 o M~R 1994 response to stress, temperature, vibration, and other factors that influence the operation and integrity of the aircraft. By suitably enabling the emitting elements in the integrated source-detector matrix, signals affecting the operation of the sensors may be transmitted to the sensors, and information can be received by the integrated source-detector matrix in the form of light. The matrix itself `may be integrated in a suitable computer that monitors the ~ondition of the aircraft. Data received by the matrix may be accessed by the computer by simply addressing the appropriate photonic elements.
The integrated source-detector matrix can be advantageously combined with optics such that the ampli-tude of the optical signal received by the light sensors is a function of the displacement between the integrated source-detector and the target from which light is re-flected. The inte~rated source-detector matrix can thus be incorporated in tracking devices such as an optical head, such as a CD head. Elements or subunits within the matrix 20 ~ can closely focus on a~small target to be tracked, or upon adjacent targets, so that not only can the displacement of the head from the target be rapidly adjusted, but informa-tion contained in the target can be multiply read by subunits in the matrix.
for a bet~ter ~understanding of these and other objects of the present invéntion, reference is made to the detailed description o~ the invention which is to be read in ~onjunction with the following drawings, wherein:
;~ FIG. l is a partially schematic top plan view of an integrated source-detector matrix of photonic elements in accordance with the present invention;
FIG. la is a partially schematic view of an integrated source-detector matrix of photonic elements in accordance with an alternate embodiment of the invention;

::

A~ .t_.

21319165 PCT/USg 3 / O ~ 4 2 -O

~ T~ AR ~9~
FIG. 2 is a cross sectional side view illustrating a multilayered structure of a photonic element employable in an array in accordance with the invention;
FIG. 3 is a cross sectional side view of two photonic elements operatively disposed in a coplanar arrangement on a common substrate;
FIG. 4 iS an electronic schematic that is helpful in understanding t~e present invention;
FIGs. 5 - 7 are partially schematic top plan views of an integrated source-detector matrix of photonic elements in alternate embodiments of the invention;
FI~. 8 is a diagrammatic view of an aircraft that ~: incorporates an integrated source-detector matrix in accordance with the invention;
15FIG~ 9 is a schematic view of a~ integrated source-~: detector matrix in accordance with the invention that is ncvrporated in an optical indicia reader;
FIG. 10 is a schematic plan view of an integrated source-detector matrix in accordance with the invention that is helpful in understanding its operation in the apparatus depicted in FIG. 9;
: FIG. 11 is a schematic view of an optical reader in accordance with the prior art;
FIGs. 12 -~ 14 are diagrams that are useful in 2S understanding the:advantages of the present invention;
: FIG. lS is ~a: schematic view of an integrated source-detector matrix in accordance with the invention that is incorporated in an optical head; and FIG. 16 is a schematic view of an integra~ed .
source-detector matrix in accordance with the invention - that is incorporated in an optical interface.
Turning now to the drawings, and in particular to ~:~FIG. 1, there is shown a preferred embodiment comprising an array or matrix of photonic elements, designated generally by reference numeral 10. FIG. 1 is merely exemplary of a large area matrix, and that an array of .~. ~., ~ .

2131465 ~CT/US9 3 ~ O ~ 4 2 0 12 n3 Rec~ Pr.rJPTn 3 o M~R 1994 dimensions m x n, where m and n are positive integers, may be used without departing from the spirit of the inven-tion. Neither the array nor the elements thereof are necessarily constrained to a rectilinear configuration.
; Array 10 comprises a plurality of photonic elements 12a - 12i operatively disposed in a two-dimensional, m x n matrix form~ Each photonic element 12a - 12i has associ-ated therewith a discrete isolation device 14a - 14i which interconnects that element 12 to a bus of address line~ 18 connecting each element to one or more data lines 19, 20.
These buses or lines are formed of an electrically conductive material such as a metal or a thin film conductive oxlde. The interconnection functions can be implemented in various forms depending upon the specific system ~unctions desired. In a preferred embodiment, the isolation devices 14a - 14i are omitted and alternate photonic elements are connected directly to the data lines 19 and 20. In this fashion photonic elements 12a, 12c, 12e, 12g, 12i are connected to data line 19 and photonic elements 12b, 12d, 12f,~ 12h are connected to data line 20.
In this manner large numbers of elements can be controlled in a matrix without the~ need for addressing logic.
~ach of the photonic elements 12a - 12i is preferably an LED, as indicated generally by reference numer~l 12 in FIG.~ 2. LED 12 has- a well known multiIay-ered structure, and rests on substrate 28. Such an LED
can be driven to emit light in response to an electrical siqnal, and can~ also produce a detectable electrical signal in response to the absorption of illumination, thus functioning as a photodetector. In the preferred embodiments the diodes 12a - 12i are disposed on the same :
side of substrate 28 so that they are substantially coplanar. Thus the diodes are collocated in a small ~; region, as can be further appreciated with reference to ~ 35 FIG. 3, wherein two neighboring diodes 12, 12 are disposed ;~ close together on substrate 28. This arrangement is :~ .

213146~ ~r~lilS~ 3~ ~ 42 Q
13 03 Rec'd Pr.T/~Tln 3 0 MAR 1994 advantageous in that with appropriate optics, as might be achieved when the image is out of focus, the ~ield of view of a diode 12 that is configured as a light sensor can readily be caused to be substantially coextensive with the field of illumination of a nei~hboring diode 12 that is configured as a light source. Also if the dimensions of the individual elements as imaged on the indicia substrate are smaller than the substrate diffusion length, typically 0~05 mm. or less, then the system will respond as if the two fields of view are substantially coextensive. It will be evident that flood iIlumination and the detrimental optical effects~ resulting therefrom that were di~cussed above can be avoided.
The isolation devices 14a - 14i associated with 1~ each of the photonic elements 12a - 12i, respectively, are utilized to restrict the flow of electrical current through the photosensitive array 10 to only predetermined paths so as to facil~itate the discrete addressing of e~ch particular photosensitive element 12. The isolation devices 14a - 14i may comprise a current control device, ; such as a transistor,~ a threshold switch, an FET, rela~, :
or the like.
In certain applications it may be desired to integrate ancillary~ electronic circuitry 13, such as switches, amplifiers, and the like onto substra~e 28.
. -Such circuits ~may be coupled to the address lines in accordance with the requirements of the application. The ~, details of fabrication of integrated solid state circuits and m x n arrays of both one and two dimensions are well known and need not be further described herein.
It will also be appreciated by those skilled in the art that an optical isolating opa~ue material may be operatively disposed between the photonic diodes 12a - 12i to optically isolate the diodes from one another and substantially reduce optical cross-talk. In FIG. 3 opa~ue material 33 separates two diodes 12, 12.

A~IF~r--~) S~E--, 2131~65 ?~ S~ 3 ~O~ 42 14 ~ P~ n MAR l99 AS previously mentioned, the invention is prefera-bly practiced with a plurality of identically fabricated LEDs that can be tailored to generate charge when absorbing light radiation, and to emit light when an S electrical potential is placed across the layers of semiconductor alloy material so as to forward bias the diode.
Each of the diodes is coupled to conventional electronic circuitry whereby it can be driven as a light source or can be incorporated in a photodetection circuit whereby an electrical signal is generated in response to light that is detected~by the diode. Referring now to F~G. 4, there is shown a photonic element 36 that is switchable by the action of switch 34 between a light source circuit 30 and a light sensor circuit 40. When switch 34 is not engaged, then LE~ 36 is disabled entirely. Switch 34 can be a mechanical or electro~ic switch, operable at a required speed, such as a transis-tor, relay, diode, and the like. Switch 34 may be integrated with array 10 on substrate 28 and incorporated in ancillary electronics 13 if desired, or it may be extrinsic to array~10. Also in some applications it may not~be required at all, as the photonic elements may be ~' ~ ~ permanently connected as sources or detectors.
, ' 25~ Turning now to FIG. 5, there is illustrated a first alternate embodiment of the invention, wherein an exemplary 3 x 3 integrated array comprises photodiodes 62a 62e that are configured as light sensors, and the light emitting elements are microlasers 64a - 64d. The photodiodes 62a - 62e and lasers 64a - 64d are deposited on substrate 6a by methods known to the art, and are electrically isolated from one another by isolation devices 14a - 14i. Opaque insulating material may be disposed between the photonic elements to prevent optical cross-communication therebetween. The lasers and photodiodes are selectively addressed by address bus 18.

AMEi~!3E~S~EET

-`. 2131~65 P~TJUS~3/0t 4 2 ~3R~'r~r- ~QMARl994 The signals are conveyed by signal lines 19, 20. If desired, greater versatility can be achieved by providing each photonic element with a dedicated address line, at a cost in density of component distribution on the substrate or chip. Ancillary electronics 13 may optionally be provided as discussed above with reference to FIG. 1. The proportion and distribution of the diodes and lasers may be varied in accordance with the needs of the application, " the intensity of light emitted by the lasers 64, and the detection capabilities of the light diodes 62. This first alterna~e embodiment can be advantageously employed where intense, coherent light is required, as in optical interfaces and communicators. It will be appreciated that particuIar lasers 64 may emit light of differing wave-lengths, and that the response of light sensors 62 may be individually matched tv lasers 64 within array 60. In this way a plurality of functional subunits within the ~;~ matrix can be established, each producing a signal in response to a different optical characteristic or maintaining an individual optical communication channel.
Pra~tical uses for such a matrix will be discussed below.
A second alternate embodiment of the invention is deplcted in FIG. 6 wherein there is illustrated an integrated source-detector array, shown generally at 70 (aspects of which are also shown in FIGS. 2 and 33.
Photonic elements comprising light detectors 74 and liqht sources 76 are shown in an exemplary 2 x 2 matrix. Light detectors 74 can be p-n diodes, p-i-n diodes, or phototransistors or the like. Light sources 76 are LEDs or lasers. The photonic elements 74, 76 are fabricated on a substrate 28 as explained above with reference to FIGs.
1 and 5, and can be provided in desired combinations.
Each photonic element has its own data line 170 to external circuitry (not shown). As discussed above with reference to FIGs. 1 and 5, opaque material may be dis-posed between the photonic elements to prevent optical ~ _ " ; ~ L .

2131465 P~T/US 9 ~ / O l 4 2 0 16 03 Rec'd ~r,'T/~ 3 0 ~R 1994 cross-communication. A proximal end face of an optical fiber waveguide 72 is disposed in face-to-face proximity with each of the photonic elements 74, 76. Waveguides 72, which may be fiberoptic lines, efficiently transmit light 5 that is emitted from light emitting elements 76 to remote locations and return light from remote locations to iight sensor elements 74. Ancillary electronics 13 may option-ally bs provided as discussed above.
Turning now to FIG. 8, there is shown an exemplary application of the embodiment depicted in FIG. 6, wherein an integrated semiconductor array 92 is disposed in an aircraft 90. Fiberoptic waveguides 96 are coupled at their proximal ends to photonic elements on array 92 as discussed above and are directed through the aircraft to interface at their distal ends with sensor devices 94 that monitor operatin~ conditions in the aircraft such as stress, temperature, and vibration. Optical signals , emanate from the~sensors and are conducted through the waveguides 96 and are received by the light sensing elements of array 92. Signals generated by the light sensing elements can be amplified by conventional elec-tronics such as ancillary electronics 13 in FIG. 6 and coupled to display ~indicators or a computer that has been programmed to monitor the sensor outputs. Light emitting ~elements w~thin array 92 can be optically coupled to the remota sensors 94 by waveguides 96 and can provide control signals and/or energy thereto. It will be appreciated by ~ , those skilled in the art that while the operation of array 92 has~been explained with regard to an aircraft, array 92 could be incorporated in other apparatus including other transport, or in process control devices that are employed in manufacturing, chemical reactions, petroleum refining and the liXe. Array 92 could also be coupled with a second similar in~egratèd array, wherein it would function as an optical communicator or repeater. This would be ~; advantageous in applications involving very long distances .

2~31~65 ~ 5~3~0~ ~2 0 03 Rec'd PC~/PTO 3 ~ M~R l994 where signal losses become significant. It will also be appreciated that such systems may be further optimized by the use of other optical elements such as lenses and apertures appropriately designed.
In FIG. 7 there is shown a variant of the embodi-ment described with respect to FIG. 6. In this ~mbodi-ment, shown generally at 80, an exemplary matrix of light source elements 84 and light detecting elements 83 are disposed on substrate 28 in pairs. The proximal plane of ~0 a fiber optic waveguide 82 is disposed in face-to-face proximity with each pair of photonic elements 83, 84, ~ while the distal plane of waveguide 82 is coupled to a ;~ remote location. Light is thereby intercommunicated between the pair of photonic elements 83, 84 and the remote location. Construction of array 80 in other ;~ respects is essentially identical to the embodiment of FIG. 6. It will also be appreciated that such systems may be further optimized by the use of other optical elements such as lenses and apertures appropria~ely designed.
~; 20 The integrated array according to the invention can :
improve the performance of optical imaging devices.
urning now to FIG. 9, there is schematically shown an image detector 100 that~;incorporates an integrated source-detector array 10~;according to the present invention.
The embodiments of the~matrix discussed with respect to FIG. 1 or FIG. 5 are suitable. Areas 103 on substrate 28 are pop~lated by~light~ emitting and light detecting , :
photonic elements, and~comprise functional subunits within the matrix. Light beams, representatively denoted by reference numerals 104, 104, are directed between array 102 and target indicia 101 by optics 105. Optics 105 can be a mirror, a lens system, or could be omitted entirely in appropriate applications. While the target 101 is shown as a bar code, it is understood that the device could be designed to read other indicia such as OCR
characters, ordinary text, and graphic images. Optics 105 2 1 3 1 ~ 6 ~
~IUS~3/O 1 42 D
18 03 Rec'~ Pr~ Tn 3 0 M~R ~994~
can be designed so that particular regions 103 spatially correspond in their fields of view and illumination to limited regions on the target 101 with spatial dimensions less than the diffusion length of the indicia substrate.
By choosing suitable optics, light emanating from a particular region 103 will not flood illuminate the target. Controller 109 is coupled to array 102 and can individually address regions 103 and photonic elements disposed therein. If desired, regions 103 can be permanently connected or spatially or temporally enabled by controller 109 so that the instrument reads selective regions on target 101, or sequentially reads a plurality of optical characteristics of the target. It will be recalled that the photonic elements can be tailored to différ from one another in spectral response. This facilitates the reading of ~ore than one optical charac-teristic of target 101.
In FIG. 10 there is illustrated matrix 102 which has been divided for purposes of explanation into concentric zones having boundaries 117, 118, 119.
Contr~ller 109, by addressing photonic elements in appropriate regions 103, can enable photonic elements that are contained within successively large~ circular bound-aries or in annular zones therebetween. In this way the image detector can operate with a variable scanning field .
of vlew.
Referring once again to FIGs. 4 and 9, when array ~; 102 is constructed in accordance with the embodiment of FIG. 1, switch 34 (FIG. 4) can be operable by a controller such as controller 109. When required, controller 109 may cause a desired set of photonic diodes 36 that are included in regions 103 to alternate between a photoemitting and a photodetecting mode so that the instrument can per~orm optimally under changing condi-tions. As required in a given application, controller 109 may continually enable a set of diodes in a desired mode.

AMENDED ~HEET

~131~65 ~CT~US g 3 / 0 1 4 2 ~
03 Rec'd PCT/PTO 3 0 MAR 1994 The signal produced by each of the light sensors is shown diagr~mmatically as waveform 106. ThiS can be coupled to signal processing circuitry 108. Signal processing circuitry 108 could include a digitizer in the case of a bar code reader, that would convert the signal to bit serial form. In the case of optical information having periodicity, the signal processing circuitry 108 may include a processor adapted to signal processing algorithms as required for interpretation of the optical information that is detected by matrix 102. The output of the signal processing circuitry 108 may be submitted to any suitable display, storage medium, or to a computer or microprocessor.
The signal processing circuitry 108 may be collocated on substrate 28 with matrix 102. In appli-cations where the signal processing is complex this may be impractical; nevertheless miniaturization may be achieved by placing the signal processing circuitry 108 and the array 102 in a common housing.
Tuxning now to FIG. 15, there is denoted generally by reference numeral 150 an optical head that incorporates an `integrated source-detector array according to the ;invention. Array~152 is shown for purposes of explanation as a linear array having two light sensing elements 156, 2S IS8, and a single ;light emitter lS4. However any appropriate m x n array or matrix can be employed. Light emanates as~ exempl~ary~ray 155a, from light source 154, passes through optics 159, and is incident on a region 157 of target 161. Target 161 in this embodiment is an ~` 30 optical disk, but could be any o~ject adjacent to optical head 150 wherein the displacement therebetween is sought to be determined. Light is reflected from region 157, and returned through optics 159 as rays 155b, 155c to be absorbed on light sensors 156, 158. Signals are generated by the light sensors, represented by waveform 162 wherein two signal levels are shown. The amplitudes 166, 168 of ,. ... ...
tt, 2~31465 PC~lUs9 3 1 0 1 ~ 2 0 ~3 Rec'd PCT~PTO 3 0 MAR 1994 the signal levels are indicative of the displacement of the target 161 from light sensors 156, 158 respectively.
The signals produced by light sensors 15h, 158 are coupled to processing electronics 164 which control the operation of a motor 165 that adjusts the displacement between light sensors 156, 158 and target 161 to a desired level. In a given application the motor can operate so as to equalize amplitudes 166, 168, or it may adjust these amplitudes to a desired absolute level. Additionally the sum of signals 166 - 168 might be used to give additional information about the region 157.
In FIG. 16 there is shown at 160 an optical interface that includes an integrated source-detector array according to the invention. The array is coupled to a fiberoptic element 164 that may be an optical fiber or bundle of fibers. Light from photoemitting elements of array 162 penetrates end plane 163 and is conducted through fiber 164 to a remote location. As is well known in the fiberoptic art, multiple communication channels can ~oexist in an optical fiber. A communication channel could correspond, to particular combinations of light ~ , .
sources and light sensors in array 162, such as light source 166 and light sensor 167. These photonic elements may emit or be responsive to 1ight of differing wave-lengths. Light traveling through fiber 164 in thedirection of array 162 may be incident on light sensor 166 and convey information from a remote location. As explained above, electrica~ signals that are interchanged ~: :
between matrix 162 and processing electronics 168 govern the operation of the interface. While one optical fiber 164 is shown in FIG. 16 for purposes of explanation, it will be u~erstood by those skilled in the art that a plurality of fibers can b~ employed.
While this invention has been explained with refer-ence to the structure disclosed herein, it is not confined to the details set forth and this application is intended A~,EriDEa SHEET

'~131~65 PCr/U~ 9 3 / 0 1 4 ~ l) :i 03 Re~ T~PTf~ 3 O M~R 1994 21 to cover any modifications and changes as may come within the scope of the following claims:

AMENDCD SHE~T

Claims (29)

What is claimed is.
1. An integrated, solid state structure comprising a substrate, a plurality of identically fabricated, substantially coplanar photonic diodes disposed on said sub-strate that are optically and electrically isolat-ed from one another, first circuit means for enabling said diodes to emit light, second circuit means for enabling said diodes to detect light, at least one of said diodes being driven by said first circuit means so as to emit light in response to an applied electrical stimulus, at least one of said diodes being coupled to said second circuit means so as to detect light and generate an electrical signal in response to said detected light,
2. The solid state structure of claim 1, further com-prising control means for selectively enabling and dis-abling at least one of said diodes.
3. The solid state structure of claim 1, further comprising means for switchably operating at least one of said diodes in a photoemissive mode and a photodetecting mode.
4. The solid state structure of claim 1, wherein each of said photonic diodes is coupled to an optical fiber, whereby optical information can be interchanged with remote locations.
5. An optical information detecting apparatus comprising:
an integrated, solid state structure further comprising a plurality of photonic diodes configured as a plurality of light sensors and a plurality of light emitting elements disposed on a substrate and are electrically isolated from one another, said light sensors being optically isolated from said light emitting elements, said diodes having a vertical structure, comprising a plurality of identically fabricated layers, corresponding layers of said diodes being mutually coplanar, circuit means connected to said light sensors for enabling said diodes to detect light, whereby a signal is generated in response to said detected light and means for directing light that emanates from said light emitting elements to a target and for returning light that contains optical information to said light sensors said means for directing light being external to said solid state structure whereby said signal is indicative of an optical character-istic of said target.
6. The apparatus of claim 5, further comprising control means for selectively enabling and disabling said diodes.
7. The apparatus of claim 5, wherein said light directing means further includes a second integrated solid state structure that is optically coupled to said appara-tus, whereby optical information can be communicated therebetween.
8. The apparatus of claim 5, wherein said light emitting elements and said diodes comprise identically fabricated photonic diodes.
9. The apparatus of claim 8, further comprising means for switchably operating at least one of said identically fabricated photonic diodes in a photoemissive mode and a photodetecting mode.
10. The apparatus of claim 5, further comprising means for detecting displacement between said solid state structure and said target.
11. A bar code reading apparatus having an integrated, solid state structure that comprises a plurality of photodiodes disposed on a substrate and are electrically isolated from one another, said photodiodes having a vertical structure, compris-ing a plurality of layers, corresponding layers of said diodes being mutually coplanar, said diodes further having identical length and width dimensions;
circuit means for enabling said photodiodes to detect light, whereby a signal is generated in response to said detected light, a plurality of light emitting diodes having a vertical structure, comprising a plurality of layers that are substantially coplanar with corresponding layers of said photodiodes, said photodiodes and said light emitting diodes being identically fabricated, and means for directing light that emanates from said light emitting diodes onto indicia being read and for returning light reflected from said indicia to said photodiodes, said means for directing light being external to said solid state structure.
12. The apparatus of claim 11, further comprising control means for selectively enabling and disabling said light emitting elements and said photodiodes, whereby a variable scanning light spot can be established.
13. The apparatus of claim 11, wherein said light emitting elements and said photodiodes comprise identi-cally fabricated photonic diodes.
14. The apparatus of claim 11, wherein said photodiodes and said light emitting elements are opera-tively associated as members of functional subunits, and light that emanates from light emitting members of a subunit and passes through said light directing means is reflected from said indicia and communicated to light sensing members of said subunit.
15. An integrated, solid state structure comprising:
a substrate;
a plurality of light sensing diodes disposed on said substrate; and a plurality of microlasers, disposed on said substrate;
said microlasers and said light sensing diodes being electrically and optically isolated from one another.
16. An apparatus for reading indicia comprising:
an integrated, solid state structure having a substrate and having at least one unit comprising:
a first diode disposed on said substrate and config-ured as a light sensor for producing a signal responsive to light incident thereon; and a second diode disposed on said substrate and configured as a light emitter;
a first optical fiber having a first end in face-to-face proximity with said first diode for transmitting light thereto and a second end; and a second optical fiber in face-to-face proximity with said second diode for carrying light energy emitted therefrom toward the indicia for illumination thereof, a portion of said light energy returning from the indicia;
whereby said returning light is incident on said first diode and the signal produced by said first diode is representative of the indicia.
17. The apparatus according to claim 16, wherein said first diode and said second diode are disposed on said substrate in electrical and optical isolation from one another.
18. The apparatus according to claim 16, further compris-ing optical means for directing a portion of said returning light energy to said second end of said first optical fiber.
19. The apparatus according to claim 16, wherein said first diode and said second diode have an identical vertical structure, comprising a plurality of layers, corresponding layers of said first and second diodes being mutually coplanar.
20. The apparatus according to claim 16, wherein said first diode and said second diode are identical photonic diodes.
21. The apparatus according to claim 16, wherein said first diode comprises a first plurality of diodes and said second diode comprises a second plurality of diodes.
22. The apparatus according to claim 21, wherein said first plurality of diodes is connected to a first data line and said second plurality of diodes is connected to a second data line for control thereof; whereby multiple elements can be controlled without addressing logic.
23. The apparatus according to claim 21, wherein said first plurality of diodes and said second plurality of diodes are disposed In a two-dimensional matrix.
24. The apparatus according to claim 21, wherein said first plurality of diodes are intermingled with said second plurality of diodes in said matrix.
25. The apparatus according to claim 16, wherein said second diode is a microlaser.
26. The structure according to claim 15, wherein said microlasers and said light sensing diodes are arranged in a matrix and are selectively addressed.
27. The structure according to claim 15, wherein said microlasers and said light sensing diodes are arranged in a matrix, and said microlasers are electrically connected in parallel, and said light sensing diodes are electri-cally connected in parallel.
28. An apparatus for reading information having an integrated, solid state structure that comprises a plurality of light detectors disposed on a surface of a substrate and electrically connected in parallel, said light detectors having a vertical structure, comprising a plurality of layers, corresponding layers of said light detectors being mutually coplanar;
a plurality of solid state light sources disposed on a same side of said substrate as said surface, said sources being optically isolated from said light detectors, and means for directing light that emanates from said sources onto information being read and for returning light reflected from said information to said light detectors, said means for directing light being external to said solid state struc-ture.
29. The apparatus according to claim 28, wherein said sources are electrically connected in parallel.
CA002131465A 1992-03-04 1993-02-17 Integrated solid state light emitting and detecting array and apparatus employing said array Abandoned CA2131465A1 (en)

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EP0764916A1 (en) 1997-03-26
WO1993018555A1 (en) 1993-09-16
DE69310900T2 (en) 1998-02-05
DE69310900D1 (en) 1997-06-26
JPH07505976A (en) 1995-06-29
US5319182A (en) 1994-06-07
EP0629315A1 (en) 1994-12-21
EP0629315B1 (en) 1997-05-21

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