CA2159242A1 - Process for Manufacturing Semiconductor Device and Semiconductor Wafer - Google Patents
Process for Manufacturing Semiconductor Device and Semiconductor WaferInfo
- Publication number
- CA2159242A1 CA2159242A1 CA2159242A CA2159242A CA2159242A1 CA 2159242 A1 CA2159242 A1 CA 2159242A1 CA 2159242 A CA2159242 A CA 2159242A CA 2159242 A CA2159242 A CA 2159242A CA 2159242 A1 CA2159242 A1 CA 2159242A1
- Authority
- CA
- Canada
- Prior art keywords
- chip
- wafer
- semiconductor device
- electrodes
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
A process for manufacturing a semiconductor device.
Chip sections are defined on a wafer by scribe lines, with each chip section having chip electrodes formed thereon. The wafer is covered with a passivating film except for an area on the chip electrodes. Aluminum interconnection layers are provided such that each layer is connected to the chip electrode at one end thereof, and the other end of the layer is extended towards the central portion of the chip section. A
cover coating film is applied on the passivating film and the layers. A number of apertures are formed in the coating film passing therethrough, and bump electrodes are formed at the position corresponding to the apertures. The chip sections are then separated from each other along the scribe lines into semiconductor devices.
Chip sections are defined on a wafer by scribe lines, with each chip section having chip electrodes formed thereon. The wafer is covered with a passivating film except for an area on the chip electrodes. Aluminum interconnection layers are provided such that each layer is connected to the chip electrode at one end thereof, and the other end of the layer is extended towards the central portion of the chip section. A
cover coating film is applied on the passivating film and the layers. A number of apertures are formed in the coating film passing therethrough, and bump electrodes are formed at the position corresponding to the apertures. The chip sections are then separated from each other along the scribe lines into semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002254329A CA2254329A1 (en) | 1994-09-30 | 1995-09-27 | Process for manufacturing semiconductor device and semiconductor wafer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6237653A JP2792532B2 (en) | 1994-09-30 | 1994-09-30 | Semiconductor device manufacturing method and semiconductor wafer |
JP237653/1994 | 1994-09-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002254329A Division CA2254329A1 (en) | 1994-09-30 | 1995-09-27 | Process for manufacturing semiconductor device and semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2159242A1 true CA2159242A1 (en) | 1996-03-31 |
CA2159242C CA2159242C (en) | 1999-12-07 |
Family
ID=17018517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002159242A Expired - Fee Related CA2159242C (en) | 1994-09-30 | 1995-09-27 | Process for manufacturing semiconductor device and semiconductor wafer |
Country Status (6)
Country | Link |
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US (2) | US5844304A (en) |
EP (1) | EP0704895B1 (en) |
JP (1) | JP2792532B2 (en) |
KR (1) | KR100241573B1 (en) |
CA (1) | CA2159242C (en) |
DE (1) | DE69526895T2 (en) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2792532B2 (en) * | 1994-09-30 | 1998-09-03 | 日本電気株式会社 | Semiconductor device manufacturing method and semiconductor wafer |
US6111317A (en) * | 1996-01-18 | 2000-08-29 | Kabushiki Kaisha Toshiba | Flip-chip connection type semiconductor integrated circuit device |
EP0791960A3 (en) * | 1996-02-23 | 1998-02-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor devices having protruding contacts and method for making the same |
US6169329B1 (en) * | 1996-04-02 | 2001-01-02 | Micron Technology, Inc. | Semiconductor devices having interconnections using standardized bonding locations and methods of designing |
DE19613561C2 (en) * | 1996-04-04 | 2002-04-11 | Micronas Gmbh | Method for separating electrically tested electronic elements connected to one another in a body |
CA2255599C (en) | 1996-04-25 | 2006-09-05 | Bioarray Solutions, Llc | Light-controlled electrokinetic assembly of particles near surfaces |
KR100186333B1 (en) * | 1996-06-20 | 1999-03-20 | 문정환 | Chip-sized semiconductor package and its manufacturing method |
US6075279A (en) * | 1996-06-26 | 2000-06-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
TW571373B (en) * | 1996-12-04 | 2004-01-11 | Seiko Epson Corp | Semiconductor device, circuit substrate, and electronic machine |
TW480636B (en) | 1996-12-04 | 2002-03-21 | Seiko Epson Corp | Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment |
JP3796016B2 (en) | 1997-03-28 | 2006-07-12 | 三洋電機株式会社 | Semiconductor device |
JP2962351B2 (en) * | 1997-03-31 | 1999-10-12 | 日本電気株式会社 | Bonding structure to semiconductor chip and semiconductor device using the same |
US6034437A (en) * | 1997-06-06 | 2000-03-07 | Rohm Co., Ltd. | Semiconductor device having a matrix of bonding pads |
JP3335575B2 (en) | 1997-06-06 | 2002-10-21 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
US6441473B1 (en) * | 1997-09-12 | 2002-08-27 | Agere Systems Guardian Corp. | Flip chip semiconductor device |
JP3068534B2 (en) * | 1997-10-14 | 2000-07-24 | 九州日本電気株式会社 | Semiconductor device |
JP3768817B2 (en) * | 1997-10-30 | 2006-04-19 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
TW434646B (en) | 1997-11-21 | 2001-05-16 | Rohm Co Ltd | Semiconductor device and method for making the same |
US7215025B1 (en) * | 1998-03-20 | 2007-05-08 | Mcsp, Llc | Wafer scale semiconductor structure |
US7205181B1 (en) | 1998-03-20 | 2007-04-17 | Mcsp, Llc | Method of forming hermetic wafer scale integrated circuit structure |
US6982475B1 (en) | 1998-03-20 | 2006-01-03 | Mcsp, Llc | Hermetic wafer scale integrated circuit structure |
JP3727172B2 (en) * | 1998-06-09 | 2005-12-14 | 沖電気工業株式会社 | Semiconductor device |
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- 1995-09-27 CA CA002159242A patent/CA2159242C/en not_active Expired - Fee Related
- 1995-09-29 KR KR1019950033151A patent/KR100241573B1/en not_active IP Right Cessation
- 1995-10-02 EP EP95306974A patent/EP0704895B1/en not_active Expired - Lifetime
- 1995-10-02 DE DE69526895T patent/DE69526895T2/en not_active Expired - Fee Related
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2003
- 2003-08-22 US US10/645,782 patent/USRE39603E1/en not_active Expired - Lifetime
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EP0704895A2 (en) | 1996-04-03 |
EP0704895B1 (en) | 2002-06-05 |
USRE39603E1 (en) | 2007-05-01 |
KR100241573B1 (en) | 2000-02-01 |
DE69526895T2 (en) | 2003-02-27 |
CA2159242C (en) | 1999-12-07 |
JP2792532B2 (en) | 1998-09-03 |
US5844304A (en) | 1998-12-01 |
EP0704895A3 (en) | 1996-12-04 |
JPH08102466A (en) | 1996-04-16 |
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