CA2159906C - Fluorescent materials for illumination purpose - Google Patents

Fluorescent materials for illumination purpose Download PDF

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Publication number
CA2159906C
CA2159906C CA002159906A CA2159906A CA2159906C CA 2159906 C CA2159906 C CA 2159906C CA 002159906 A CA002159906 A CA 002159906A CA 2159906 A CA2159906 A CA 2159906A CA 2159906 C CA2159906 C CA 2159906C
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fluorescent material
combination
radiation
fluorescent
activator
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CA2159906A1 (en
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Martin Zachau
Dieter Schmidt
Ulrich Muller
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Osram GmbH
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Patent Treuhand Gesellschaft fuer Elektrische Gluehlampen mbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/38—Devices for influencing the colour or wavelength of the light
    • H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
    • H01J61/46—Devices characterised by the binder or other non-luminescent constituent of the luminescent material, e.g. for obtaining desired pouring or drying properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7777—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7797—Borates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/38—Devices for influencing the colour or wavelength of the light
    • H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/38—Devices for influencing the colour or wavelength of the light
    • H01J61/42—Devices for influencing the colour or wavelength of the light by transforming the wavelength of the light by luminescence
    • H01J61/44—Devices characterised by the luminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/70—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr
    • H01J61/76—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr having a filling of permanent gas or gases only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
    • H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/2806—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices and specially adapted for lamps without electrodes in the vessel, e.g. surface discharge lamps, electrodeless discharge lamps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

Fluorescent materials, which when irradiated with VW
radiation, in particular at wavelengths in the range between about 145 nm and 185 nm, luminesce efficiently in the visible region of the spectrum. To this end, particular host lattices are selected which have an optical band gap of at least 6.7 eV, in particular borates, phosphates, aluminates and silicates. These are doped with the activators Eu3+ (red fluorescence), Tb3+ (green fluorescence) or Eu2+ (blue fluorescence). A preferred illuminant coating for a three-band fluorescent lamp comprises the red illuminant R: (Y0.72Gd0.2Eu0.08)BO3, the green illuminant G:
(La0.43Ce0.39Tb0.18)PO4, and the blue illuminant B:
(Ba0.94Eu0.06MgAl10O17, the components being mixed in the ratio R:G:B = 0.36:0.555:0.085. Fig. 7

Description

i i FLUORESCENT MATERIALS FOR ILLUMINATION PURPOSES
The invention relates to fluorescent materials and fluorescent lamps coated with them.
It is related closely to German Patent DE 43 11 197A1, in which a novel mode of operation for dielectrically impaired discharges is disclosed. The teaching provided in detail therein enables among others a markedly more efficient generation of UV and VLTV radiation, especially by means of excimers - such as Xe2*, which emits a molecular band radiation in the range around 172 nm - than was possible previously. Hereinafter, the term VLTV radiation will be used to mean particularly electromagnetic radiation at wavelengths in the range between about 145 nm and 185 nm.
The primary field of application of modern fluorescent materials in lighting technology, or in other words for converting short-wave electromagnetic radiation into light, is the fluorescent lamp. Such a lamp is based on mercury low-pressure discharge, which outputs energy predominantly in the form of UV radiation. Essentially, this is radiation of an atomic spectral line with a wavelength of about 254 nm.
To meet the increasing demand for environmental awareness, mercury-free UV and VW radiation sources have increasingly been developed recently. Until now, however, it was possible to attain only relatively low UV and WV
yields (approximately l0% to 20%, at industrially relevant power densities), by comparison with mercury low-pressure discharge (approximately 70%). It was therefore uneconomical to use this mercury-free UV or VW radiator in an embodiment as a fluorescent lamp for general lighting, ~~ ~'.'~'.x ~ ...5 '~ ~:
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i optical spectrum, characterized in that for efficient excitation with Xez* excimer radiation, the host lattice has an optical band gap of at least 6.7 eV, and the activator or activators are adapted to the host lattice in such a way that more than 50% of the Xez* excimer radiation is absorbed by the host lattice and is transferred to the activator or activators, if the optical band edge is located closer to the long-wave end of the spectrum of the Xe2* excimer radiation, or that more than 50% of the Xe2* excimer radiation is absorbed by the activator or activators themselves, if the optical band edge is located closer to the short-wave end of the spectrum of the Xe2* excimer radiation.
A further object of the invention is to disclose a fluorescent lamp with a fluorescent material coating suitable for purposes of general lighting, the lamp being based on a VUV radiator that in particular generates wavelengths in the range between approximately 145 nm and 185 nm.
One characteristic variable for the efficiency of the conversion of electromagnetic radiation by fluorescent materials is its wavelength-dependent excitability. This is proportional to the product of the absorption and the quantum efficiency. The latter is the likelihood of the generation of a photon by the fluorescent material after a photon of relatively short wavelengths (relative 1y high energy) has been absorbed. Maximum excitability accordingly is present if both the absorption and the quantum efficiency are 100%, or in other words every incident photon is absorbed and converted into a photon of longer wavelengths (lower energy).
I

In preliminary tests, the excitability with ~
radiation of a number of typical fluorescent materials for use in conventional fluorescent lamps with mercury low-pressure discharge has been purposefully ascertained by measurement technology. It has been found that in all the fluorescent materials, with decreasing wavelength of the incident radiation, although the absorption essentially increases, nevertheless the excitability unexpectedly decreases drastically when it drops below a limit wavelength. This behavior is shown as an example in Figs.
1-3. These figures show the standardized excitability as the function of the wavelength of one fluorescent material each for the colors red (Y203 : Eu3+) , green (GdMgB501o : Ce, Tb) and blue (BaMgAlloOl~:Eu). As a consequence, some fluorescent materials, which are advantageously used in conventional fluorescent lamps, such as the green fluorescent material CeMgAl11019 : Tb3+, exhibit inadequate excitability by VLTV
radiation. In that case, the drop in excitability already extends over the entire WV range. Other 3a fluorescent materials, contrarily, can be better excited by Wv radiation, since the drop does not occur until at the short-wave end of the WV range. One example of this is the blue fluorescent material BaMgAl1001~:Eu2+, which is likewise known (see Fig. 3).
The physical processes on which the observed behavior is based are not yet entirely understood. It is currently assumed that possible causes are based on fundamentally different absorption mechanisms for radiation at wavelengths below the limit wavelength. The radiation power of the spectral line that is most important for fluorescent material excitation in the conventional mercury low-pressure discharge, at wavelengths 254 nm, leads primarily to an excitation of the activator atoms, or coactivators (sensitizers) that are possibly present, which also act as loci of luminescence. The sensitizers in this case transfer the excitation energy to the activator atoms. Below the limit wavelength, the absorption through the host lattice increases abruptly (the absorption coefficient attains values on the order of magnitude of 105 cm-1 and more). The limit wavelength can therefore be interpreted in simplified terms as the maximum wavelength that a photon can have if it is to be just able to excite an electron from the valence band of the host lattice into the conduction band. The attendant energy difference between the valence and conduction bands will hereinafter be called the optical band gap, while the limit wavelength will be called the optional band edge.
If an electron of the host lattice is excited from the valence band into the conduction band, by absorbing one photon of corresponding energy, the result is an "electron-hole pair", in which the electron and the hole can be free or bound in the form of an exciton. (Details may be found for instance in: Charles ~~.~~~~6 Kittel, Einfuhrung in die Festkorper Physik [Introduction to Solid-State Physics], Oldenbourg Verlag, Munich, 5th Edition, 1980, pp. 359 ff.) An exciton is electrically neutral and can therefore move relatively freely within the lattice and give up its energy to its collision partner, such as an activator atom.
The latter can in turn radiate energy in the form of light. For increasing photon energies (decreasing wavelengths of the radiation absorbed), a pronounced decrease in excitability has been ascertained experimentally as soon as the photon energies are greater than the optical band gap (that is, the wavelengths of the photons are lower than the optical band edge). Although there is no intent to adhere to any particular theoretical explanation, currently both surface and volume imperfections are considered to be responsible for this observation. The imperfections increasingly "catch" the free electrons and holes or excitons before the latter can give up their energy to the activator atoms (that is, the loci of luminescence). From the imperfections -which can be contamination, misalignments, or the like - the energy passes without radiation into various loss channels and in the final analysis produces nothing but undesired heating of the fluorescent material.
The teaching-of the invention begins here; it purposefully claims those fluorescent materials for lighting purposes that can be~efficiently excited with VUV radiation. Based on the discoveries described above, this means fluorescent materials whose optical band gap in the host lattice is above the low-energy limit of the energy spectrum of the WV radiation, and in particular above 6.7 eV. Suitable host lattices include borates, phosphates, aluminates and silicates, for instance. The host lattice is doped with at least one additional substance, which ~1~~~~~
functions as a locus of luminescence and is conventionally called an activator. By a suitable choice of the activator, the optical spectrum of the luminescence can be influenced in a targeted way.
The color of the luminescence is used to designate the applicable fluorescent material. The three fundamental colors red, green and blue are of predominant interest for lighting technology, because with them virtually any arbitrary mixed color can be produced, for instance for effect or signal lighting, as well as white light -which is especially important for general lighting. To that end, l0 the most various fluorescent material components are combined with one another, for instance being mixed or arranged in alternating succession. Suitable activators include, for instance, Eu3+ for red fluorescent materials or illuminants, Tb3+ for green illuminants, and Eu2+ for blue illuminants. Fluorescent materials whose emission spectra are especially highly suitable for a three-band fluorescent material can thus be purposefully activated. To optimize both the light yield and the color reproduction of a three-band lamp for general lighting, the main emission of the red illuminant must be at approximately 610 nm, of the green illuminant at approximately 540 nm, and of the blue illuminant at approximately 450 nm (see, for example, A. W. Thornton, J. Opt.
Soc. Am. 61 (1971) 1155).
In the further feature, one or more further dopant substances are added to the host lattice. Once again these are activators, or in other words loci of luminescence. In this way it is possible with only a single fluorescent material to attain fundamentally arbitrary mixed colors by a suitable choice of the various activators. For instance, yellow light is produced from a fluorescent material with one green- and one red-luminescing activator. For white light, at least one third, blue-luminescing ~~~~~Q~
activator is additionally necessary.
Depending on the location of their optical band edge within the VW range of interest here, the VUV fluorescent materials or illuminants according to the invention - that is, those that are efficiently excitable - can be roughly assigned to two classes.
In the first class, more than 50% of the incident VW radiation output is absorbed by the host lattice and from there is transferred to the loci of luminescence. The remaining proportion of the VUV radiation output can be absorbed directly by the activator atoms, for instance. One example of this is the red fluorescent material (YXGdyEuz)B03. This is a mixed borate activated with trivalent europium Eu3+. Suitable values for x, y and z are 0 <_ x <_ 0.99, 0 <_ y <_ 0.99, 0.01 <_ z 5 0.2, with preferred values being 0.55 <_ x <_ 0.87, 0.1 <_ y <_ 0.3 and 0.03 <- z <_ 0.15, where in each case the peripheral condition x + y + z ~ 1 is met. One example of a blue fluorescent material is the mixed aluminate (BaxEuy)MgAl10O17 activated with divalent europium Eu2+.
Suitable values for x and y are 0.6 <_ x <- 0.97, 0.03 <- y <_ 0.4, and preferably 0.8 <_ x 5 0.95, 0.05 <_ y <- 0.2, where in each case x + y ~ 1. Examples of green fluorescent materials activated with trivalent terbium Tb3+ are: 1.) the mixed aluminate (YXGdyTbz)3A15012, where the following are true: 0.1 <- x <_ 0.99, 0 <_ y _<< 0.9, 0.03 <_ z <- 0.4 and x + y + z ~ 1, and in particular y - 0, 0.8 <_ x <_ 0.99, 0.01 <_ z <- 0.2 and x + z ~ 1; 2.) the mixed silicate (YXScyTbz)2Si05, where the following are true: 0.6 <- x <_ 0.99, 0 5 y _< 0.1, 0.01 <- z <_ 0.4 and x + y + z ~ 1; and 3.) the mixed borate (YXGdyTbz)B03, where the following are true: 0 <_ x <_ 0.99, 0 <_ y <_ 0.99, 0.01 S z _< 0.4, preferably 0.55 <- x <_ 0.8, 0.1 < y < 0.3, 0.03 <_ z <_ 0.2 and x + y + z ~ 1. The closer the optical band edge is to the upper limit of the VUV wavelength _7_ range, the more the absorption of the WV radiation by the host lattice dominates. In an extreme case, there is nothing but host lattice absorption; that is, with and without activators the same absorption is attained.
In the second class, conversely, more than 50% of the incident VUV radiation output is absorbed directly by the activator (that is, the locus of luminescence). The remaining portion of the VUV radiation output can be absorbed for instance by the host lattice and possible further dopant substances. This situation pertains if the optical band edge of the host lattice is markedly lower than the upper limit of the VUV wavelength range.
Examples for this class of fluorescent materials are mixed phosphates, activated with trivalent terbium Tb3+, corresponding to the general formula (LnxCeySCWTbz)P04, where Ln is one of the elements lanthanum La, yttrium Y or gadolinium Gd or a mixture of these elements. Suitable values for x, y, w and z are 0.35 _< x <_ 0.95, 0 <_y <_ 0.5, 0 <_ w <_ 0.2, 0.05 5 z <_ 0.5, and preferably w =
0, 0.45<_ x <_ 0.8, 0.1 5 y <_ 0.3, 0.1 <_ z <_ 0.25, where in each case w + x + y + z ~ 1. In these cases, the excitation output is absorbed almost exclusively by the activator Tb3+ itself. The Ce3+ required as a sensitizer in excitation with radiation at the wavelength 254 nm is in the present case of VUV excitation for the fluorescent materials of this class of secondary importance and can possibly be omitted, without resulting in any change in the light yield. Whether in this connection Ce3+ brings about any improvement at all (however slight) has not yet been conclusively determined.
In a preferred embodiment, one or more of the fluorescent materials described are processed to make a fluorescent material coating. The choice of fluorescent materials is done such that _g_ ~~~9~~6 VUV radiation is converted into especially suitable spectral ranges. To that end, the fluorescent material coating is advantageously applied to the inside wall surface of a lamp bulb, and inside the lamp bulb WV radiation is generated, especially at wavelengths in the range between about 145 nm and 185 nm. This short-wave radiation is already strongly absorbed in air and in most lamp vessel materials, which is why coating on the outer wall would demand special and hence expensive WV-transparent materials - such as special quartz glasses like SUPRASIL(R) (made by Heraeus). Moreover, in that case the lamp would have to have an additional outer bulb for protection against being touched.
In an especially preferred embodiment, a three-band fluorescent material coating is used to generate white light. It comprises the following fluorescent materials according to the invention: a red component R, in particular (Y, Gd)B03:Eu3+, a green component G, in particular LaP04:(Tb3+, Ce3+), and a blue component B, in particular BaMgAl1p017-Eu2+% for the proportions by weight in the mixture, the following relations apply: 0.2 < R
< 0.5, 0.4 < G < 0.7, 0.05 < B < 0.15, and R + G + B = 1. The fluorescent material coating is distinguished not only by Qood WV
excitability but also by good color reproduction, which is of major importance especially in lighting technology. Moreover it can be advantageous to provide the surface of the fluorescent materials, that is, of the individual granules of fluorescent material and/or of the applied fluorescent material coating, with a protective layer, for instance of MgF2, that is adequately transparent in the WV range.
The invention is described in further detail below in terms of several exemplary embodiments. First, some lighting engineering data of fluorescent materials is provided, ascertained ~~~9~~~
from excitation with Xe2* excimer radiation. The variable EXe indicates how high the excitability with VUV radiation (by means weighted with the spectrum of Xe2* excimer radiation in the wavelength range between 145 nm and 185 nm) relative to the maximum excitability that is attained for a certain discrete wavelength. EXe is thus the value to which the excitability of a fluorescent material decreases if it is irradiated not with radiation at the wavelength of its maximum excitation but rather with the entire continuum of exciter radiation in the wavelength range between 145 nm and 185 nm. Q*Xe stands for the approximate quantum efficiency (it is influenced by how the fluorescent material is prepared and has not been optimized, so that the values given should be understood as lower limits). Shown are Fig. 1, the VUV excitation spectrum of the red fluorescent material Y203:Eu3+%
Fig. 2, the VUV excitation spectrum of the green fluorescent material CeMgAl11019:Tb3+%
Fig. 3, the VUV excitation spectrum of the blue fluorescent material BaMgAl1001~:Eu2+~
Fig. 4, the VUV excitation spectrum of the red fluorescent material (Y0.~2Gdp.2Eup.Og)B03%
Fig. 5, the VUV excitation spectrum of the green fluorescent material (La0.43Cep.39Tb0.18)P04%
Fig. 6a, the side view of a novel fluorescent lamp with a three-band fluorescent material coating according to the invention;
Fig. 6b, the cross section taken along the line A-A of the fluorescent lamp shown in Fig. 6a;
Fig. 7, the emission spectrum of the three-band fluorescent lamp of Figs. 6a, b.

21~°~~~
Example 1 The first exemplary embodiment describes red fluorescent materials with highly suitable emission spectra. They are each rare earth mixed borates activated with trivalent Europium. The following table shows fluorescent materials of various compositions; the first composition contains both yttrium Y and gadolinium Gd, while the next two each contain only yttrium or only gadolinium. In Fig. 4, the excitation spectrum of fluorescent material number 1 is shown.
EXe ~Xe No. Composition 1 ~Yo.~2Cdo.2 Eu o.os~B~30.89 0.69 Z ~Yo,92Euo.oa~B~3 0.86 0.57 3 ~Cdo.9zEuo.os~B~3 0.84 0.57 Example 2 The second exemplary embodiment describes green fluorescent materials with very highly suitable emission spectra. These are rare earth mixed phosphates activated with trivalent terbium. The following table shown fluorescent materials of various compositions, some of which are additionally doped with trivalent cerium or scandium as coactivators. The first four fluorescent materials contain lanthanum La. In the next four fluorescent materials, the 2~.~9~~~~
lanthanum has been replaced with yttrium Y, and scandium Sc has also been added to fluorescent material number 8. In the last three fluorescent materials, the lanthanum has been replaced with gadolinium Gd, and once again scandium Sc has been added to the last fluorescent material. Fig. 5 shows the excitation spectrum for the fluorescent material Lap,44Ce0.43Tb0.13)P~4~
EXe QXe No. Composition 1 ~~0,43Ceo,39~bo,18~p040.89 0.80 2 ~~o,s~Ceo,29Tbo.i4~p~a0.88 0.78 l0 3 Wo,6sCeo,2oT6o.is~p~40.87 0.76 4 ~~o,g2sTbo,m2~p~4 0.86 0.74 S ~Yo,434Ce0,394Tbo,172~p~40.89 6 ~Yo,6sCeo,2~bo,ts~p~40.91 0.72 7 ~Yo,s2aTbo,m2~p~4 0.82 0.65 8 ~Yo,s~sS~o,oiTbo.l~2~p040.89 0.73 ~Cdo,434Ce0,394T6o,172~p~40.89 0.82 10 Od0,828~bo,172~P~40.84 --x.71-11 ~Gdo.s2iS~o.oo6~Tbo,o2~P~40.89 0.8 2I~9~0 Example 3 The third exemplary embodiment again describes green fluorescent materials with very highly suitable emission spectra.
As the following table shows, this group includes two yttrium borates activated with trivalent terbium, and number 2 additionally contains gadolinium.
lVo.Composition EXe QXe 1 ~Ya,9Tb o,i ~B03 0.84 0.62 2 ~Yo.Wdo.2Tb O,1~B030.86 0.65 Example 4 The fourth exemplary embodiment describes a further green fluorescent material. This is a rare earth mixed silicate activated with trivalent terbium and containing yttrium and scandium, in accordance with the formula (YO,g24Sc0.002Tb0.074)2Si05. The following values were found:
EXe = 0.94, Q*Xe = 0.8.
Example 5 The fifth exemplary embodiment describes two further green fluorescent materials. These are rare earth mixed aluminates activated with trivalent terbium. The first fluorescent material 2~~9~~~
is an yttrium aluminate of the following composition:
(Y0.9Tb0.1)3A15~12~ The following values were ascertained: EXe =
0.94, Q*Xe = 0.76. In the second fluorescent material - which is of equal value in its properties - gadolinium is substituted for 20% of the yttrium: (Y0,7Gd0,2Tb0,1)3A15~12~
Example 6 The sixth exemplary embodiment describes a blue fluorescent material. This is a mixed aluminate activated with divalent europium, in accordance with the formula (Ba0,g4Eu0,06)MgA110017~
The following values were found: EXe = 0.96, Q*Xe = 0.86.
Example 7 Fig. 6a shows the side view and Fig. 6b the cross section of a fluorescent lamp 1 that is especially suitable for lighting purposes. The circular-cylindrical discharge vessel 2 comprises DURAN(R) glass (made by Schott) that is 0.7 mm thick, and the vessel has a diameter of about 50 mm and is filled with xenon at a pressure of 173 hPa. Centrally axially inside the discharge vessel 2, there is an inner electrode 3 in the form of a special steel bar of circular cross section and with a diameter of 2 mm.
On the outer wall of the discharge vessel 2, 12 conducting silver strips each 1 mm wide and 8 mm long, are disposed as outer electrodes 4 axially parallel and uniformly distributed. The inner wall of the discharge vessel 2 is coated with a fluorescent material layer 6. This is a three-band fluorescent material mixture having the blue component B: (Ba0,g4Eu0,06)MgA110017, the green component G: (La0,43Ce0.39Tb0.18)p~4. and the red component 21~~~0 R: (Y0.72Gd0.2Eu0.Og)B03. The components are mixed in the ratio B:G:R = 0.85:0.555:0.36. A pulsed periodic voltage, which with respect to the outer electrode amounts to approximately 4 kV, with a mean pulse length of approximately 1.2 ~s and a pulse frequency of approximately 25 kHz, is applied to the inner electrode 3 by means of an Edison base 7. A light yield of 40 lm/W is thus attained. The color temperature is 4000 K, and the color site, in accordance with the color standard table according to CIE, has the coordinates x = 0.38 and y = 0.377. The emission spectrum of this lamp is shown in Fig. 6.

Claims (20)

CLAIMS:
1. In combination with a source of vacuum ultraviolet (VUV) broad band molecular excited radiation of wavelenghts between approximately 145 nm and 185 nm, which radiation is generated by Xe2* excimer radiation, fluorescent materials for illumination purposes and excitation with VUV radiation, comprising a host lattice and at least one dopant substance, wherein the dopant substance contains at least one activator and luminesces in the visible range of the optical spectrum characterized in that for efficient excitation with Xe2*
excimer radiation, the host lattice has an optical band gap of at least 6.7 eV, and the activator or activators are adapted to the host lattice in such a way that more than 50%
of the Xe2* excimer radiation is absorbed by the host lattice and is transferred to the activator or activators, if the optical band edge is located closer to the long-wave end of the spectrum of the Xe2* excimer radiation, or that more than 50% of the Xe2* excimer radiation is absorbed by the activator or activators themselves, if the optical band edge is located closer to the short-wave end of the spectrum of the Xe2* excimer radiation.
2. ~The combination of claim 1, characterized in that the dopant substances contain more than one activator.
3.~The combination of claim 1 or 2, characterized in that activator contain Eu3+.
4.~The combination of claim 3, characterized in that the fluorescent material contains a mixed borate in accordance with the general formula (Y x Gd y Eu z) BO3, where the following relations apply: 0 <= × <= 0.09, 0 <= y <=
0.99, 0.01 <= <= 0.2, and x + y + z = 1.
5. The combination of claim 4, characterized in that x, y and z are in the ranges of 0.55 <= 0.87, 0.1 <= y <=
0.3 and 0.03 <= z <= 0.15, and x + y + z = 1.
6. The combination of claim 1 or 2, characterized in that the activator contains Eu2+.
7. the combination of claim 6, characterized in that the fluorescent material contains a mixed aluminate in accordance with the general formula (Ba x Eu y)MgAl10O17 where the following relations apply: 0.6 <= x <= 0.97, 0.03 <=
y <= 0.4 and x + y = 1.
8. The combination of claim 7, characterized in that x and y are in the ranges of 0.8 <= x <= 0.95, 0.05. <= y <= 0.2 and x + y = 1.
9. the combination of claim 1 or 2, characterized in that the activator contains Tb3+.
10. The combination of claim 9, characterized in that the fluorescent material contains a mixed aluminate in accordance with the general formula (Y x Gd y Tb z)3Al5O12 where the following relations apply: 0.1 <= x <= 0.99, 0 <=
y <= 0.9, 0.01 <= z <= 0.4, and x + y + z = 1.
11. The combination of claim 10, characterized in that y = 0 and x, z are in the ranges 0.8 <= x <= 0.99, 0.01 <= z <=
0.2, and x + z = 1.
12. The combination of claim 9, characterized in that the fluorescent material contains a mixed silicate in accordance with the general formula (Y x Sc y Tb z)2SiO5 where the following relations apply: 0.6 <= x <= 0.99, 0 <=
y <= 0.1, 0.01 <= z <= 0.4, and x + y + z = 1.
13. The combination of claim 9, characterized in that the fluorescent material contains a mixed borate in accordance with the general formula (Y x Gd y Tb z) BO3 where the following relations apply: 0.1 <= x <= 0.99, 0 <=
y <= 0.99, 0.01 <= z <= 0.4, and x + y + z = 1.
14. The combination of claim 13, characterized in that x, y and z are in the ranges of 0.55 <= x <= 0.8, 0.1 <= y <=
0.3, and 0.03 <= z <= 0.2, and x + y + z = 1.
15. The combination of claim 9, characterized in that the fluorescent material contains a mixed phosphate in accordance with the general formula (Ln x Ce y Sc w Tb z)PO4 where Ln is one of the elements La, Y or Gd or a mixture of these elements, and where the following relations apply:
0.35 <= x <= 0.95, 0 <= y <= 0.5, 0 <= w <= 0.2, 0.05 <= z <= 0.5, and w + x + y + z = 1.
16. The combination of claim 15, characterized in that w = 0 and x, y and z are in the ranges of 0.45 <= x <= 0.8, 0.1 <= y <= 0.3, 0.1 <= z <= 0.25, and x + y + z = 1.
17. A fluorescent lamp with a fluorescent material coating on the inner wall surface of the lamp bulb, wherein VUV radiation is generated inside the lamp bulb, characterized in that the VUV radiation comprises Xe2~
excimer radiation, and the fluorescent material coating contains one fluorescent material or more fluorescent materials in accordance with any one of claims 1 to 16.
18. The fluorescent lamp of claim 17, characterized in that the fluorescent material coating contains a red fluorescent material R of claim 4, a green fluorescent material G of claim 16, and a blue fluorescent material B of claim 7, where the proportions by weight in the mixture are:
0.2 < R < 0.5, 0.4 < G < 0.7, 0.05 < B < 0.15, and R + G + B
= 1.
19. The fluorescent lamp of one of claims 17 and 18, characterized in that the surface of the fluorescent materials and/or of the fluorescent material coating is provided with a protective layer.
20. The fluorescent lamp of claim 19, characterized in that the protective layer comprises MgF2.
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Families Citing this family (463)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19517515A1 (en) * 1995-05-12 1996-11-14 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp and method for operating such discharge lamps
DE19526211A1 (en) * 1995-07-18 1997-01-23 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Process for operating discharge lamps or emitters
US6153971A (en) * 1995-09-21 2000-11-28 Matsushita Electric Industrial Co., Ltd. Light source with only two major light emitting bands
DE19543342A1 (en) * 1995-11-22 1997-05-28 Heraeus Noblelight Gmbh Process and radiation arrangement for generating UV rays for body radiation and use
DE19548003A1 (en) 1995-12-21 1997-06-26 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Circuit arrangement for generating pulse voltage sequences, in particular for the operation of dielectrically impeded discharges
JP3277788B2 (en) * 1996-01-16 2002-04-22 ウシオ電機株式会社 Discharge lamp lighting device
BRPI9715293B1 (en) 1996-06-26 2016-11-01 Osram Ag cover element for an optoelectronic construction element
DE19636965B4 (en) * 1996-09-11 2004-07-01 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Electrical radiation source and radiation system with this radiation source
JP3546610B2 (en) * 1996-09-20 2004-07-28 ウシオ電機株式会社 Dielectric barrier discharge device
DE19651552A1 (en) * 1996-12-11 1998-06-18 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Cold cathode for discharge lamps, discharge lamp with this cold cathode and mode of operation for this discharge lamp
JP3355976B2 (en) * 1997-02-05 2002-12-09 ウシオ電機株式会社 Discharge lamp lighting device
DE19711892A1 (en) 1997-03-21 1998-09-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat radiator
TW412770B (en) 1997-03-21 2000-11-21 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat fluorescent lamp for background lighting and a liquid crystal display device having this flat fluorescent lamp
DE19711893A1 (en) 1997-03-21 1998-09-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat radiator
US5998921A (en) * 1997-03-21 1999-12-07 Stanley Electric Co., Ltd. Fluorescent lamp with coil shaped internal electrode
DE19718395C1 (en) * 1997-04-30 1998-10-29 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Fluorescent lamp and method of operating it
KR100467875B1 (en) 1997-07-22 2005-01-24 파텐트-트로이한트-게젤샤프트 퓌어 엘렉트리쉐 글뤼람펜 엠베하 Process for generating voltage pulse sequences and circuit assembly therefor
DE19734883C1 (en) * 1997-08-12 1999-03-18 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Method for generating pulse voltage sequences for the operation of discharge lamps and associated circuit arrangement
DE19734885C1 (en) 1997-08-12 1999-03-11 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Method for generating pulse voltage sequences for the operation of discharge lamps and associated circuit arrangement
EP1375626B1 (en) * 1997-11-06 2007-04-04 Matsushita Electric Industrial Co., Ltd. Phosphor material and plasma display panel
EP0926705A1 (en) 1997-12-23 1999-06-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Flat radiator with locally modulated surface illumination density
US6045721A (en) * 1997-12-23 2000-04-04 Patent-Treuhand-Gesellschaft Fur Elekrische Gluhlampen Mbh Barium magnesium aluminate phosphor
EP0932185A1 (en) 1997-12-23 1999-07-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Signal lamp and phosphor
JP3353684B2 (en) 1998-01-09 2002-12-03 ウシオ電機株式会社 Dielectric barrier discharge lamp light source device
JP3521731B2 (en) 1998-02-13 2004-04-19 ウシオ電機株式会社 Dielectric barrier discharge lamp light source device
DE19811520C1 (en) 1998-03-17 1999-08-12 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dielectrically hindered discharge lamp for direct or phosphor emission of visible, ultraviolet or vacuum ultraviolet light
DE19817480B4 (en) 1998-03-20 2004-03-25 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Flat lamp for dielectrically disabled discharges with spacers
DE19817475B4 (en) 1998-04-20 2004-04-15 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Discharge lamp with dielectric barrier electrodes and lighting system with such a discharge lamp
DE19817477A1 (en) 1998-04-20 1999-10-21 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Fluorescent lamp
DE19817476B4 (en) 1998-04-20 2004-03-25 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Fluorescent lamp with spacers and locally thinned fluorescent layer thickness
DE19826809A1 (en) * 1998-06-16 1999-12-23 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dielectric layer for discharge lamps and associated manufacturing process
DE19826808C2 (en) * 1998-06-16 2003-04-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with dielectric barrier electrodes
DE19839329A1 (en) * 1998-08-28 2000-03-09 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Electronic ballast for discharge lamp with dielectric barrier discharge
DE19839336A1 (en) 1998-08-28 2000-03-09 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Electronic ballast for discharge lamp with dielectric barrier discharge
DE19843419A1 (en) 1998-09-22 2000-03-23 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp suited for operation by dielectrically obstructed discharge has part of electrodes covered with dielectric layer additionally covered directly with blocking layer between each electrode and dielectric layer.
DE19844720A1 (en) * 1998-09-29 2000-04-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dimmable discharge lamp for dielectric barrier discharges
DE19844721A1 (en) 1998-09-29 2000-04-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp for dielectrically handicapped discharges with improved electrode configuration
DE19844725A1 (en) 1998-09-29 2000-03-30 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Gas discharge lamp with controllable light length
DE19905219A1 (en) 1998-09-30 2000-08-31 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat lighting device
DE19845228A1 (en) * 1998-10-01 2000-04-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dimmable discharge lamp for dielectric barrier discharges
KR20070088816A (en) * 1998-10-20 2007-08-29 코닌클리케 필립스 일렉트로닉스 엔.브이. Plasma display panel
DE19858810A1 (en) 1998-12-21 2000-06-29 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat lighting device and operating method
WO2000058998A1 (en) * 1999-03-25 2000-10-05 Koninklijke Philips Electronics N.V. Lighting arrangement
US6191539B1 (en) * 1999-03-26 2001-02-20 Korry Electronics Co Fluorescent lamp with integral conductive traces for extending low-end luminance and heating the lamp tube
DE19916877A1 (en) * 1999-04-14 2000-10-19 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with base
DE19919169A1 (en) * 1999-04-28 2000-11-02 Philips Corp Intellectual Pty Device for disinfecting water with a UV-C gas discharge lamp
DE19927791A1 (en) * 1999-06-18 2000-12-21 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Color display e.g. LCD has spatially controllable brightness filter and back lighting discharge lamp having dielectrically impeded electrode
DE19928438A1 (en) * 1999-06-23 2000-12-28 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Method for operating a discharge lamp
KR100562879B1 (en) 1999-10-18 2006-03-24 우시오덴키 가부시키가이샤 Light source device having dielectric barrier discharge lamp
DE19953531A1 (en) 1999-11-05 2001-05-10 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with electrode holder
DE19955108A1 (en) * 1999-11-16 2001-05-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with improved temperature homogeneity
DE19960053A1 (en) 1999-12-13 2001-06-21 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat lighting device
DE10005975A1 (en) * 2000-02-09 2001-08-16 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Operating method for a discharge lamp with at least one dielectric barrier electrode
DE10011484A1 (en) 2000-03-09 2001-09-13 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Operating method for discharge lamp with dielectric layer between electrode and discharge medium, involves using mains starter with primary circuit and secondary circuit
DE10014407A1 (en) * 2000-03-24 2001-09-27 Philips Corp Intellectual Pty Low pressure gas discharge lamp
US6541924B1 (en) 2000-04-14 2003-04-01 Macquarie Research Ltd. Methods and systems for providing emission of incoherent radiation and uses therefor
EP1279321A4 (en) * 2000-04-14 2005-01-19 Macquarie Res Ltd Methods and systems for providing emission of incoherent radiation and uses therefor
AU2001250151B2 (en) * 2000-04-14 2004-07-22 Macquarie Research Ltd Methods and systems for providing emission of incoherent radiation and uses therefor
JP4884637B2 (en) 2000-04-19 2012-02-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ High pressure discharge lamp
DE10023504A1 (en) * 2000-05-13 2001-11-15 Philips Corp Intellectual Pty Noble gas low-pressure discharge lamp, method for producing a rare gas low-pressure discharge lamp and use of a gas discharge lamp
DE10026913A1 (en) * 2000-05-31 2001-12-06 Philips Corp Intellectual Pty Gas discharge lamp with fluorescent layer
US6961441B1 (en) 2000-09-29 2005-11-01 General Electric Company Method and apparatus for steganographic embedding of meta-data
DE10048410A1 (en) 2000-09-29 2002-04-11 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dielectric barrier discharge lamp
DE10048409A1 (en) 2000-09-29 2002-04-11 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with capacitive field modulation
JP3818043B2 (en) * 2000-10-12 2006-09-06 株式会社日立製作所 Green phosphor and image display device using the same
JP2002212553A (en) * 2001-01-19 2002-07-31 Kasei Optonix Co Ltd Lanthanum phosphate fluorophor for vacuum ultraviolet and rare gas discharge lamp
DE10104364A1 (en) * 2001-02-01 2002-08-14 Philips Corp Intellectual Pty Plasma screen with a fluorescent layer
JP3471782B2 (en) * 2001-02-13 2003-12-02 Ｎｅｃ液晶テクノロジー株式会社 Flat fluorescent lamp unit and liquid crystal display device using the same
DE10111191A1 (en) 2001-03-08 2002-09-19 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Electrical contact system e.g. for flat radiator of LCD system, has receptacle for insulating body with mounted contact part
DE10121095A1 (en) * 2001-04-27 2002-10-31 Philips Corp Intellectual Pty Gas discharge lamp with down conversion phosphor
US6861805B2 (en) * 2001-05-08 2005-03-01 Koninklijke Philips Electronics N.V. Coil antenna/protection for ceramic metal halide lamps
DE10122211A1 (en) 2001-05-08 2002-11-14 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat lighting device with mirror surface
DE10126159A1 (en) * 2001-05-30 2002-12-05 Philips Corp Intellectual Pty Gas discharge lamp with down conversion phosphor
DE10129630A1 (en) * 2001-06-20 2003-01-02 Philips Corp Intellectual Pty Low pressure gas discharge lamp with fluorescent coating
DE10133326A1 (en) 2001-07-10 2003-01-23 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dielectric barrier discharge lamp with ignition aid
DE10133411A1 (en) * 2001-07-13 2003-01-23 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Use of aluminate luminescent material for exciting with vacuum ultra violet radiation
DE10133949C1 (en) * 2001-07-17 2003-03-20 Inst Niedertemperatur Plasmaph Device for generating gas discharges, which is constructed on the principle of dielectric barrier discharge, for light sources and visual display devices
DE10134965A1 (en) * 2001-07-23 2003-02-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Flat discharge lamp has outer side of front plate at least partly provided with opaque coating and inner side of front plate at least partly provided with fluorescent coating
DE10140356A1 (en) * 2001-08-17 2003-02-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Tubular discharge lamp with ignition aid
DE10140355A1 (en) * 2001-08-17 2003-02-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with ignition aid
JP4727093B2 (en) * 2001-09-12 2011-07-20 パナソニック株式会社 Plasma display device
EP1296357A2 (en) 2001-09-19 2003-03-26 Matsushita Electric Industrial Co., Ltd. Light source device and liquid crystal display employing the same
US6891334B2 (en) 2001-09-19 2005-05-10 Matsushita Electric Industrial Co., Ltd. Light source device and liquid crystal display employing the same
DE10147961A1 (en) * 2001-09-28 2003-04-10 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Igniting, operating dielectric barrier discharge lamp involves applying ignition voltage between sub-electrodes to ignite auxiliary discharge at gap between sub-electrodes during ignition
US6806648B2 (en) * 2001-11-22 2004-10-19 Matsushita Electric Industrial Co., Ltd. Light source device and liquid crystal display device
US6906461B2 (en) * 2001-12-28 2005-06-14 Matsushita Electric Industrial Co., Ltd. Light source device with inner and outer electrodes and liquid crystal display device
DE10214156A1 (en) * 2002-03-28 2003-10-09 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp for dielectrically disabled discharges with a corrugated ceiling plate structure
JP3889987B2 (en) * 2002-04-19 2007-03-07 パナソニック フォト・ライティング 株式会社 Discharge lamp device and backlight
JP2003336052A (en) * 2002-05-17 2003-11-28 Matsushita Electric Ind Co Ltd Plasma display device
DE10222100A1 (en) 2002-05-17 2003-11-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dielectric barrier discharge lamp for producing visible, ultraviolet, vacuum ultraviolet and infrared radiation has base with tube fitted to lamp foot end of discharge vessel and enclosing lamp foot
DE10236420A1 (en) * 2002-08-08 2004-02-19 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Dielectric barrier discharge lamp comprises a discharge vessel enclosing a discharge medium, an electrode set, and a luminous material applied on a part of the wall of the vessel
TWI230962B (en) * 2002-08-30 2005-04-11 Harison Toshiba Lighting Corp Lighting device
DE10254208A1 (en) * 2002-11-20 2004-06-03 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Dielectric barrier discharge lamp and use of this lamp for X-ray viewing
US6827877B2 (en) * 2003-01-28 2004-12-07 Osram Sylvania Inc. Red-emitting phosphor blend for plasma display panels
JP3793880B2 (en) * 2003-02-06 2006-07-05 松永 浩 Lighting device
US6730458B1 (en) 2003-03-03 2004-05-04 Samsung Electronics Co., Ltd. Method for forming fine patterns through effective glass transition temperature reduction
DE10312720A1 (en) * 2003-03-21 2004-09-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Dielectric barrier discharge lamp with crimp seal
US6831421B1 (en) 2003-03-24 2004-12-14 The United States Of America As Represented By The Secretary Of The Air Force Shunt-induced high frequency excitation of dielectric barrier discharges
DE60312648T2 (en) * 2003-04-30 2007-11-22 Centrum Für Angewandte Nanotechnologie (Can) Gmbh Luminescent core-shell nanoparticles
DE10324832A1 (en) * 2003-06-02 2004-12-23 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Discharge lamp with fluorescent
DE10326755A1 (en) 2003-06-13 2006-01-26 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Discharge lamp with dual band phosphor
WO2005006388A2 (en) * 2003-07-15 2005-01-20 Philips Intellectual Property & Standards Gmbh Colour tunable lighting element
DE10336088A1 (en) * 2003-08-06 2005-03-03 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH UV lamp with tubular discharge vessel
DE10347636A1 (en) * 2003-10-09 2005-05-04 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Discharge lamp with at least one outer electrode and method for its production
AU2003304505A1 (en) * 2003-10-21 2005-05-05 Sumitomo Chemical Company, Limited Fluorescent material and fluorescent material paste
US7863816B2 (en) * 2003-10-23 2011-01-04 General Electric Company Dielectric barrier discharge lamp
JP3872472B2 (en) * 2003-11-12 2007-01-24 日亜化学工業株式会社 Green light emitting yttrium silicate phosphor for projection tube and projection tube using the same
DE10359882A1 (en) * 2003-12-19 2005-07-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Circuit arrangement for operating electric lamps
DE102004020398A1 (en) * 2004-04-23 2005-11-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Dielectric barrier discharge lamp with external electrodes and lighting system with this lamp
US11158768B2 (en) 2004-05-07 2021-10-26 Bruce H. Baretz Vacuum light emitting diode
US7196473B2 (en) * 2004-05-12 2007-03-27 General Electric Company Dielectric barrier discharge lamp
DE102004025266A1 (en) * 2004-05-19 2005-12-08 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lighting system with a housing and a flat lamp arranged therein
US7591962B2 (en) * 2004-05-27 2009-09-22 Koninklijke Philips Electronics N.V. Low-pressure mercury vapor discharge lamp comprising UV-A phosphor
US7446477B2 (en) 2004-07-06 2008-11-04 General Electric Company Dielectric barrier discharge lamp with electrodes in hexagonal arrangement
US20060006804A1 (en) * 2004-07-06 2006-01-12 Lajos Reich Dielectric barrier discharge lamp
KR20060004791A (en) * 2004-07-08 2006-01-16 삼성코닝 주식회사 Flat lamp
US7390437B2 (en) * 2004-08-04 2008-06-24 Intematix Corporation Aluminate-based blue phosphors
JP4575123B2 (en) * 2004-11-29 2010-11-04 浜松ホトニクス株式会社 Dielectric barrier discharge lamp
EP1859472A2 (en) * 2005-01-07 2007-11-28 Philips Intellectual Property & Standards GmbH Segmented dielectric barrier discharge lamp
CN101151706A (en) * 2005-03-30 2008-03-26 皇家飞利浦电子股份有限公司 Discharge lamp and backlight unit for backlighting a display device comprising such a discharge lamp
DE102005034505A1 (en) 2005-07-20 2007-02-01 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Circuit arrangement with transformerless converter with choke for the pulsed operation of dielectric barrier discharge lamps
KR100725763B1 (en) 2005-12-05 2007-06-08 주식회사 신안유브이 Electric field ultraviolet rays lamp
US7495396B2 (en) * 2005-12-14 2009-02-24 General Electric Company Dielectric barrier discharge lamp
DE102006010791A1 (en) * 2006-03-08 2007-09-13 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lighting system with a flat lamp and a frame
DE202006005212U1 (en) * 2006-03-31 2006-07-20 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lighting system with dielectric barrier discharge lamp has flat strip two wire high voltage cable connecting high voltage generator to lamp electrodes
WO2007116331A1 (en) * 2006-04-11 2007-10-18 Philips Intellectual Property & Standards Gmbh Discharge lamp comprising uv-phosphor
US20080174226A1 (en) 2007-01-23 2008-07-24 Nulight Technology Corporation Mercury-free flat fluorescent lamps
DE102007006861B3 (en) * 2007-02-12 2008-05-29 Universität Karlsruhe (Th) Radiation source for producing electromagnetic radiation having a first wavelength region comprises electrodes connected to an alternating voltage source, a gas-filled transparent discharge vessel and a dielectric layer
DE202007002131U1 (en) * 2007-02-13 2007-04-19 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lighting system for background illumination of liquid crystal displays comprises a frame having an upper part and a lower part joined together using a detachable connecting unit and a flat lamp arranged between the upper part and lower part
DE202007004236U1 (en) * 2007-03-22 2007-06-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Dielectric barrier discharge lamp with ignition aid
JP4668287B2 (en) * 2008-02-18 2011-04-13 シャープ株式会社 Illumination device and liquid crystal display device
WO2009139908A1 (en) * 2008-05-15 2009-11-19 Rutgers, The State University Fluorescent excimer lamps
US20110056513A1 (en) * 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
JP5195371B2 (en) * 2008-12-05 2013-05-08 ウシオ電機株式会社 Excimer lamp device
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
DE102009030310A1 (en) 2009-06-24 2010-12-30 Osram Gesellschaft mit beschränkter Haftung Dielectric barrier discharge lamp with discharge spaces
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
KR101795827B1 (en) 2010-06-04 2017-11-08 액세스 비지니스 그룹 인터내셔날 엘엘씨 Wirelessly powered dielectric barrier discharge lamp, and base station for a wirelessly powered fluid treatment system
JP5504095B2 (en) * 2010-08-10 2014-05-28 株式会社オーク製作所 Discharge lamp
DE102010043208A1 (en) 2010-11-02 2012-05-03 Osram Ag Device for irradiating surfaces
DE102010043215A1 (en) 2010-11-02 2012-05-03 Osram Ag Spotlight with base for the irradiation of surfaces
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
JP6055170B2 (en) * 2011-06-15 2016-12-27 セイコーエプソン株式会社 Light source device, discharge lamp driving method, and projector
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
KR20130009648A (en) * 2011-07-13 2013-01-23 가부시키가이샤 지에스 유아사 Ultraviolet irradiation device
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
DE102012018854B4 (en) * 2012-09-25 2018-02-15 Berger GmbH & Co.KG Flat gas discharge lamp for dielectrically impeded discharges with three electrodes and two gas chambers
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US20140099798A1 (en) * 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
WO2014068622A1 (en) * 2012-10-31 2014-05-08 Empire Technology Development Llc Light guide structure and illuminating device
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (en) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. Method of depositing thin film
KR102263121B1 (en) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. Semiconductor device and manufacuring method thereof
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (en) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. Method of forming metal interconnection and method of fabricating semiconductor device using the same
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (en) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
CN111316417B (en) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 Storage device for storing wafer cassettes for use with batch ovens
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (en) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 Method for depositing gap filling layer by plasma auxiliary deposition
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN116732497A (en) 2018-02-14 2023-09-12 Asm Ip私人控股有限公司 Method for depositing ruthenium-containing films on substrates by cyclical deposition processes
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
TWI811348B (en) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
TW202349473A (en) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TW202013553A (en) 2018-06-04 2020-04-01 荷蘭商Ａｓｍ 智慧財產控股公司 Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR20210027265A (en) 2018-06-27 2021-03-10 에이에스엠 아이피 홀딩 비.브이. Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material
WO2020002995A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (en) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (en) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming device structure, structure formed by the method and system for performing the method
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
TW202104632A (en) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
KR102638425B1 (en) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for filling a recess formed within a substrate surface
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
TW202100794A (en) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR20200116033A (en) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR20200123380A (en) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
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KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
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US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TW202121506A (en) 2019-07-19 2021-06-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming topology-controlled amorphous carbon polymer film
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CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
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US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (en) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
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KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
TW202125596A (en) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
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US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
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US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
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US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132576A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Method of forming vanadium nitride-containing layer and structure comprising the same
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
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KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
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KR20220010438A (en) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. Structures and methods for use in photolithography
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KR20220027026A (en) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. Method and system for forming metal silicon oxide and metal silicon oxynitride
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
TW202217037A (en) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
CN114639631A (en) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 Fixing device for measuring jumping and swinging
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1022399A (en) * 1911-08-18 1912-04-09 Joseph T Thomasson Animal-shoeing apparatus.
DK106921C (en) * 1963-12-31 1967-04-03 Philips Nv Screen with luminescent material.
JPS5915951B2 (en) * 1974-12-10 1984-04-12 松下電器産業株式会社 Vacuum ultraviolet-excited phosphor device for displays
JPS5941474B2 (en) * 1976-04-30 1984-10-06 大日本塗料株式会社 gas discharge light emitting device
US4161457A (en) * 1977-03-15 1979-07-17 Dai Nippon Toryo Co., Ltd. Process for preparing a divalent europium activated alkaline earth metal aluminate phosphor
US4423349A (en) * 1980-07-16 1983-12-27 Nichia Denshi Kagaku Co., Ltd. Green fluorescence-emitting material and a fluorescent lamp provided therewith
EP0062993A1 (en) * 1981-04-09 1982-10-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Cathode ray tube phosphor layers
JPS5813688A (en) * 1981-07-20 1983-01-26 Mitsubishi Chem Ind Ltd Production of fluorescent substance
JPS5834560A (en) * 1981-08-21 1983-03-01 周　成祥 Discharge lamp display unit
CA1198148A (en) * 1982-06-28 1985-12-17 E. I. Du Pont De Nemours And Company Electrostatic printing process
US4583026A (en) * 1983-07-19 1986-04-15 Mitsubishi Denki Kabushiki Kaisha Low-pressure mercury vapor discharge lamp
JPS6155839A (en) * 1984-08-26 1986-03-20 Osamu Tada Manufacture of fluorescent lamp
JPH079795B2 (en) * 1986-12-01 1995-02-01 東芝ライテック株式会社 Discharge lamp
AU607520B2 (en) * 1987-08-06 1991-03-07 Shing Cheung Chow Discharge lamp type display device
EP0331738B1 (en) * 1987-08-10 1996-11-27 Mitsubishi Denki Kabushiki Kaisha Green light emitting rare gas discharge lamp
CH675504A5 (en) * 1988-01-15 1990-09-28 Asea Brown Boveri
JPH02135277A (en) * 1988-11-17 1990-05-24 Sanyo Electric Co Ltd Fluorescent lamp
US5117160C1 (en) * 1989-06-23 2001-07-31 Nec Corp Rare gas discharge lamp
JP2671575B2 (en) * 1989-11-22 1997-10-29 日本電気株式会社 Driving method of gas discharge display element
KR930005688B1 (en) * 1990-02-06 1993-06-24 삼성전관 주식회사 Green-luminous phosphor
FR2672281B1 (en) * 1991-02-04 1993-04-16 Rhone Poulenc Chimie LANTHANE MIXED PHOSPHATE, TERBIUM AND CERIUM, MANUFACTURING METHOD THEREOF.
US5047173A (en) * 1991-03-08 1991-09-10 Gte Products Corporation Method of reducing the powder weight of europium activated strontium tetraborate phosphor
KR930008163B1 (en) * 1991-04-02 1993-08-26 삼성전관 주식회사 Discharge tube
DE4209763A1 (en) * 1991-06-18 1992-12-24 Hartmut Dipl Phys Schmidt Electronically operated compact fluorescent lamp - has heat insulating component between lamp envelope and lamp operating circuit in socket
US5132043A (en) * 1991-12-24 1992-07-21 Gte Products Corporation Method of preparing small particle size borate phosphor
US5436532A (en) * 1993-03-26 1995-07-25 Rockwell International Corporation Fluorescent lamp with improved efficiency

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