CA2173222A1 - Ultra high density, non-volatile ferromagnetic random access memory - Google Patents

Ultra high density, non-volatile ferromagnetic random access memory

Info

Publication number
CA2173222A1
CA2173222A1 CA002173222A CA2173222A CA2173222A1 CA 2173222 A1 CA2173222 A1 CA 2173222A1 CA 002173222 A CA002173222 A CA 002173222A CA 2173222 A CA2173222 A CA 2173222A CA 2173222 A1 CA2173222 A1 CA 2173222A1
Authority
CA
Canada
Prior art keywords
magnetic moment
random access
ferromagnetic
plane
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002173222A
Other languages
French (fr)
Other versions
CA2173222C (en
Inventor
Gary A. Prinz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Navy
Original Assignee
Gary A. Prinz
The Secretary Of The Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gary A. Prinz, The Secretary Of The Navy filed Critical Gary A. Prinz
Publication of CA2173222A1 publication Critical patent/CA2173222A1/en
Application granted granted Critical
Publication of CA2173222C publication Critical patent/CA2173222C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Abstract

A random access memoq element (100) utilizes giant magnetoresistance. The element (100) includes at least one pair of ferromagnetic layers (106, 110) sandwiching a nonmagnetic conductive layer (108). At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation which may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations. The set value is determined by the relative alignment of the magnetic moments of the first and second ferromagnetic layers.
CA002173222A 1993-10-01 1994-09-30 Ultra high density, non-volatile ferromagnetic random access memory Expired - Fee Related CA2173222C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/130,479 1993-10-01
US08/130,479 US5477482A (en) 1993-10-01 1993-10-01 Ultra high density, non-volatile ferromagnetic random access memory
PCT/US1994/010914 WO1995010112A1 (en) 1993-10-01 1994-09-30 Ultra high density, non-volatile ferromagnetic random access memory

Publications (2)

Publication Number Publication Date
CA2173222A1 true CA2173222A1 (en) 1995-04-13
CA2173222C CA2173222C (en) 2005-02-08

Family

ID=22444881

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002173222A Expired - Fee Related CA2173222C (en) 1993-10-01 1994-09-30 Ultra high density, non-volatile ferromagnetic random access memory

Country Status (7)

Country Link
US (3) US5477482A (en)
EP (1) EP0727086B1 (en)
JP (1) JPH09509775A (en)
KR (1) KR100421113B1 (en)
CA (1) CA2173222C (en)
DE (1) DE69424562T2 (en)
WO (1) WO1995010112A1 (en)

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Also Published As

Publication number Publication date
DE69424562T2 (en) 2001-01-18
JPH09509775A (en) 1997-09-30
US6381170B1 (en) 2002-04-30
WO1995010112A1 (en) 1995-04-13
DE69424562D1 (en) 2000-06-21
KR100421113B1 (en) 2004-06-14
US5661062A (en) 1997-08-26
KR960705320A (en) 1996-10-09
EP0727086A4 (en) 1997-08-20
CA2173222C (en) 2005-02-08
EP0727086A1 (en) 1996-08-21
EP0727086B1 (en) 2000-05-17
US5477482A (en) 1995-12-19

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