CA2179519A1 - Integrated laser power monitor - Google Patents
Integrated laser power monitorInfo
- Publication number
- CA2179519A1 CA2179519A1 CA002179519A CA2179519A CA2179519A1 CA 2179519 A1 CA2179519 A1 CA 2179519A1 CA 002179519 A CA002179519 A CA 002179519A CA 2179519 A CA2179519 A CA 2179519A CA 2179519 A1 CA2179519 A1 CA 2179519A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- stack
- photo detector
- laser
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
Abstract
A vertical cavity surface emitting laser source having an integrated power monitor at the non-emitting end of the source.
Description
I~TFG~TED L.~SE~ PO-~ ER ~rO:~'lTOR
i`il' pn,~ Cilt:OIl pC-'.2iZli 1~l j C,`~l mo-.~tors ?.I,~ i;LZ.lri~ ZO i~s~r -oui-ce 5 pou er monitors Verticai ca-ity surface emitting lasers in fiber optic cnmm~lnir~Ztions require a feedbaci; circuit so that the output power of the laser in the on-state can be mainiained at '- c7nct~nt le~el du.rZn~ a~lbient t~n, eralure ch?.r.resor the agina of ZlZe de~i~-e incorpcrating the la~er. In order to mo;litor Ihe output pouer oZ Ih~ laser, some frzcli~
10 ofthe output ofthe laser must be directed to a sensing device such as a photo detector.
The output of this photo detector or sensing de-ice ~s sent to a control circuit which adjusts the current dnving the laser until the desired output power is achieved For a verticai cavity surface emitting laser, a bearn splitter may be placed at the output of the laser, which would direct some of the light to a photo detector, permitting the rest ofthe 15 iight to be directed into the optic fiber However, this approach reduces the amount of light which can be coupled into the optic fiber This reduction of light being coupled into the optic fber affecls the power margin or requires that the output of the laser and the associated power dissipation be higher than it would othervvise need to be. This po~er monitoring approach increases packaging complexity of such laser source.
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SI~RY 0~ THE INVI~I~'TIO~
The present in-ention eliminates the unnecessary reduction of power in the verticai cavity surface emitting laser (VCSEL) for purposes of output povver monitonnr The invention has a photo detector integrated in the laser which detects the output 25 power from light that would otheruise be lost There is related art disc~osing verticai lasers and photodetectors. European patent application 0 177 617 A1 discloses a junction sPmircndl~rtrZr light-emitting elernent having at least one optical detector European patent application 0 395 315 A7 discloses an electricaiiy pumped verticai ca~ity laser having a distributed Bragg reflector 30 at each side of the cavity An article entiled "Continuous Wave Visib]e InGaPlInGa~iP
Quantum Well Surface Emitting Laser Diodes" by K Huang et al, in IEEE Lasers and- . Electro-Optics Society 1993 Annuai Meeting Conference Proceedings of November 15-18, at San Jose7 Caiifornia, discloses a visible verticai surface emitting iaser having a h~,ZENDED SHEEr 21 795l q Ia structure vi~h fo~r q~antum ~ells as ~lle ac-i; e nne~lium. European patent 2pplic~tion 0 56'i374 AI ~ i~cl~ cs .~ ic~ o-c~ r~ trin~rr~ .;cn c!æctrrphcto.~ic r~ .ice ' ?~ir~ ---Mol~culil-- Be?m rBpila:~ Gro~.. h of.~lCia ~G~ ~s ~.;e. .ic31 ` d~i;y Sur~lcc ,-`inirti:~g S T .asers i~nd the Perfo.-mance of PIN Photodetector Vertical Ca~ity Surface Emitting Laser Integrated Structures," by Y. Wang et al., on pages 3883-3886 in Japanese Journa of.~22!ied Ph~sics. Vol. 30, ~o. I~B, December 1,91, discloses an all-epitaxial p!anar i(-p ~ it l-n~7 m !'.i-~u~-,ru~ ,; rl la .~rs !~i. r~ trlc ~ r;t~ e!! s.-nc~iched ~c ~ n tv~o doped distliruted Brarg refec;ors cha~acter,z-.d by a ;~o-s;ep composition profile.
BRIEF DESCRIPTION OF 1~ DRAW~GS
Figure I sho~vs a basic configuration of the invention.
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AMEN~ED SHEET
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~ WO 9~1184~9 2 1 7 9 5 1 9 PCTIllS94114472 Figure 2 is a cross sectional vie~ of laser emitting at 850 nRnom,-t~rC with an integrated power monitor having a photo conducting detector.
Figure 3 is a cross sectional Yiew of laser emitting at 850 . ~ with ar~
integrated power monitor having a p-i-n detector.
S Figure 4 is a cross sectional view of laser emitting at 650 nRnonnPtrrc with an integrated power monitor having a photo conducting detector.
Figure 5 is a cross sectional view of laser emining at 980 nRnt-m~trr~ with an integrated power monitor.having a photo conducting detector.
Figure 6 is a cross sectional view of laser emitting at 850 I~allul~ a with an integrated power monitor having a photo conducting detector with the junction flipped over.
DF~(~RTPTION OF TFTF. El\~RODIMF.~TS
Figure I shows a photo detector 12 " " ~ ly integrated on the bottom side 15 of a vertical cavity surface emitting laser (VCSEL) 13. Laser 13 is normally designed such that 10 to 20 percent of the emitted light comes out back side 15 and is lost. The providing of a photo detector 12 on back side 15 of laser 13 uses this light 16 which would otherwise be lost. Thus, photo detector 12 has no effect on the amount of light 18 emined from top side 17 of laser 13 which is coupled into and conveyed by optic fiber 19.
Figure 2 reveals an ~. "l .o.l; " .. . ,1 of the invention having integrated laser and photo detector 10. An n-doped photo detector layer 14 is grown first, followed by the forming of an undoped bottom laser mirror 21, a p-type AlGaAs contact layer 22, an undoped active layer 23 having three quantum well layers 24 which are eight 25 I~ thick and each are separated by AlGaAs barrier layers 35, and then a top mirror 20 which is a doped n-type.
Device 13 is fabricated by forming n-ohmic contacts 27 on top surface 17, tllen etching down to the p-type AlGaAs contact layer æ and depositing p-ohmic contacts 25. At this stage, contacts 25 and 27 required for operating the laser are present. Next a 30 second etching step is performed to reach n-type GaAs layer 14 for photo detector 1', and n-ohmic contacts 26 and 29 are deposited at this layer 14. To operate device 10, top ohmic contacts 27 on surface 17 of top mirror 20 are held at a negative bias, while p-ohmic contacts 25 are held at a ground or reference voltage so laser 13 is for~vard-biased.
In the mode of operation, photo detector 12 is used as a photo conductor. In this mode, one of n-ohmic contacts, 26, is held at a positive bias voltage, while an even 5 mo}e positive biased voltage would be applied to the other n-ohmic contact 29. A p-i-n junction between the positively biased n-type detector layer 14 and p-layer 22 of laser 13 would be reverse biased, so a minimum current would flow. Photons which are incident on photo detector layer 14 and are absorbed are converted to a current which is collected by metal contacts 26 and 29.
For photo detector 12, about 1000 nanometers of n-doped GaAs 14 is formed on a semi-insulating or n+doped GaAs substrate 31. The doping level of layer 14 is from SxlO17tolxlO18atomspercm3. Situatedonlayerl4is60.5~ ".1~ of undoped Alo 1 5Gao gsAs material 32. On layer 32 is situated a 71.1 nanometer undoped AlAs layer 33. Layers 32 and 33 are ~/4 thick for a wavelength of 850 nAnomPtPrs. ~4 means the wa~ ;ill of the source divided by four and the refractive index of thelayer. Layers 32 and 33 are repeated 25 times on top of each other. This ef~mril~til~n of 26 pairs of layers 32 and 33 plus a layer 22 is stack 21. On top of these layers is formed 423 .5 . ,, ,. ." ,. ~ of Alo 1 sGao gsAs of layer 22 and is part of stack 21. Layer 22 is p-dopedat2xl018atomspercm3. Ontopoflayer22islayer34whichisl62.8nrnof undoped Alo 2sGao 75As On layer 34 is first layer 24 of eight l ,,- - " " l ~ . ~ of undoped GaAs layer. On layer 24 is 10 1, "..". t` .~ of Alo 2sGao 7sAs of undoped material 35.
Situated on layer 35 is another second layer 24 of eight l.-. " ." .. .'. . ~ undoped GaAs. On layer 24 is undoped Alo 2sGao 7sAs material layer 35. Situated on layer 35 is another third layer 24 of eight .,"...~ of undoped GaAs material. On that layer 24 is layer 25 36 of 100.9 l~--"~".. ll .~ of undoped Alo 2sGao 7sAs material. Layers 24, 34, 35, and 36 form stack 23 which has a thickness of 5~/4.
5~14 = ~i (la,ver t~2ickness reJractive index; ) . Situated on stack ~ 3 is stack 20. Of stack 20, situated on layer 36 is layer 37 of 71.1 nanometers of n-doped AlAs having doping leveloflxlO18atomspercm3. Formedonlayer37,islayer380f~/4n-doped Alo 1 sGao gsAs material at a doping level of I xl o l 8 atoms per cm3 . Layer 38 is 60.5 l ,~. " .. ". . . ~ thick. The pair of layers 37 and 3 8 are repeated l 7 times to form at least a part of stack 20. Layer 39 is of the same thickness and ~ of layer 37 and is ~` 2 1 79 5 1 q forrned on latter layer 38. Formed on layer 39 is layer 40 of 60.5 rlanometers or a quarter wavelength of n-doped AIxGax I As material where x = 0.15 and the dopinglevel is > Ix1019 atoms per cm3. Pairs of layers 37 and 38 plus layers 39 and 40constitute stack 20. After the stacks 20 and 23 are completed they are etched as a mesa down to layer 22. Stack 21, including layer 22, is itself etched dov~n at a wider width as a mesa on layer 14. On layer 14 outside the mesa of stack 21, n-ohmic contact 29 is formed on layer 14 on one side of the mesa and n-ohmic contact 26 is formed on the other side of the mesa of stack 21. On layer 22, having the mesa constituted by stacks 20 and 23, is a p-ohmic contact 25 placed at one side of tbat mesa and p-ohmic contact 25 placed at the other side of the mesa. On layer 40 on surface 17 a pair of n-ohmic contacts 27 are formed. For rl" . ~ ;, .p of device 10, a potential of -3 to -4 volts is applied to contacts 27, the ground or a zero-reference voltage is applied to contacts '25, a +3 volts is applied to contact 26 and a +5 volts is applied to contact 29.
The fabrication process is as follows. The single crystal epitaxial layers required for the laser 13 and photo detector 12 structure may be grown by MBE (Molecular Beam Epitaxy) or OMVPE (Organo-Metallic Vapor Phase Epitaxy). The UUlllUO~;IiUllis graded at the interfaces between layers of different çnmro~itif~n in order to reduce the resistance through the mirrors.
After epitaxial growth is complete, a mesa of stack 20 is etched down to p-contact layer 22 by using rh~-t--lith~r~lrhy to pattern the wafer surface, and etching the exposed surfaces using chlorine-gas based reactive ion etching. rhe etching produces vertical sidewalls which provide the optical c.~..,r",~ .". .1 to the device. The sample is then patterned a second time using photoresist to delineate the regions where contacts 25 are to lie. A p-ohmic metal contact 25 is deposited, with the bottom layer of the 25 contact metal consisting of gold and zinc to provide a low resistance contact. A
chemical liftoffprocess removes the metal from unwanted regions. The sample is once again patterned using photoresist, such that the first mesa and each ohmic contact 25 are protected. Again, the exposed region is etched using the chlorine-based reactive ion etching to reach the bottom detector layer 14. Here, n-ohmic contacts 26 and 25 are 30 deposited using the liftoffprocess described above.
The sample is then planariæd by spinning on a self-leveling polymer layer to cover the mesa, and then etching back this polymer to reveal the top surface of the mesa.
~ W0 95118479 2 1 7 9 5 1 9 PCT/DS94/14 172 The n-ohrnic contacts 26 and 29 are then patterned and lifted off as described abo~ e.
Anothe} rhntf~lithl-~raphy step may be used to connect the ohlnic metals to a bond pad some distance from the device. An annealing step is requi}ed to form low resistance ohrnic contacts.
Figure 3 shows a device 30 which is configured as a VCSEL combined with a p-i-n photo detector 12. In this ~ " ..1;..,. bottom mirror layers 47 are doped p-type, and an extra GaAs layer 42, which can be a very lightly doped n-type, is inserted between p-type mirror layers 44 and 45 and n-type GaAs layer 41 (to which contacts 5 8 and 59 are made). Both n-ohmic contacts to photo detector 12 on side 15 are at the 10 sarne positive bias voltage so that a reverse biased p-n junction is formed and undoped or lightly doped n-layer 42 is the absorbing layer of photo detector 12. Laser 13 of figure3emitslightat~,uulu~illl..t.,1y8501,~.,..,.,~t,.~fromtopsurfacel70flayer56.
Other r~-mro~ition~, II.h,h~ and doping ~.. ~ .~1., l;.. "~ in devices 12 and 13 of figures 2 and 3 may vary.
For device 30 in figure 3, on semi-insulating n+GaAs substrate 31 is forrned laye} 41 having 1000 ,~ ,.., ., f~ ' of n-doped GaAs material having a doping level of I -2xlO18atomspercm3. Onlayer41isformedalOOOI,-".".r~ of undopedGaAs material as layer 42. On layer 42 is a layer 43 having a 71. I 1.~ .., .., .. 1.. ~ of AlAs having a doping level Ixl ol 8 atoms per cm3. This layer 43 has a thickness of ~/4 times refractive index of the AlAs at a wavelength of 850 1, ,. ., ., ~ . Situated on layer 43 is a quarter Wd~ 1 (i.e., 60.5 ., - - ,.. ~ .. ~) of p-doped Alo 1 sGao gsAs material havingadopingleveloflxl018atomspercm3,aslayer44. Thepairoflayers43and 44 are repeated about 25 times. Situated on top of the lastly forrned layer 44 is layer 45 having a 71. I nanometer thickness or ~/4 thickness of p-doped AlAs material having a doping level of 1 xl 0 1 8 atoms per cm3 . Situated on layer 45 is a 7~14 or 423 .5 nanometerthicknessofAlo,lsGaogsAsp-dopedatalevelof2xlO18atomspercm3as layer 46. Layers 42, pairs of layers 43 and 44, layer 45 and layer 46 constitute stack 47.
On layer 46 is formed 162.8 .. - .. : . ~ of undoped Alo 2sGao 7sAs as layer 48.
Another layer 49 of 8 nanometers on umdoped GaAs is formed on layer 48. On layer 49 is formed another layer 50 of 10 ~ u~ of undoped Alo 2sGao 7sAs material. On layer 50 is formed another layer 49 of 8 nanometers of undoped GaAs material. On layer 49 is formed another layer SO of lO ",.. r~ of undoped Alo 2sGao 7sAs ~ 2t79519 WO 95/1~479 PCI/IJS94/14472 material. On layer 50 is formed another layer 49 of 8 nanometers of undoped GaAsmaterial. On layer 49 is layer Sl of 100.9 nanometers of undoped Alo 2sGao 7sAs material. Layers 48, 49, 50 and S l make up stack 52 which has a thickness of S~/4 which is equal to ~ j (iayer, thicl~ess - re~racf ive index, ) . Fomned on layer S l is layer 53 5 whichis71.1 ~ /4)ofn-dopedAlAshavinga~ ,ofdopingat IxlO18atomspercm3. Formedonlayer53islayerS4whichis60.5., --llll f~ l4) of n-dopedAlo IsGaogsAshavingadopingç~nr~nfr~tirnoflxlO]8atomspercm3.
Layers 53 and 54 are repeated about 17 times on stack 52. On top layer 54 is layer SS
which is 71. I ",- ,. ,, . ,- l~ ~ (~/4) of n-doped AlAs having a doping ~ . " ,. . . Il . ,.~ ;"" of lxl018atomspercm3. SituatedonlayerSSislayerS6havingathicknessof60.5 /4) of n-doped Alo 1 5Ga0 85As having a doping Conerntr~tion of >
1x1019 atoms per cm3. The pairs of layers 53 and 54, and layers SS and 56 constitute stack 57. Stacks 57 and 52 are etched into a mesa situated on layer 46 and stack 47 is etched down as a mesa situated on layer 41. On each side of stack 47 on layer 41 n-I S ohmic contacts 58 ~md 59 are formed. On layer 46 on both sides of the mesa stacks 57 and 52, p-ohmic contacts 60 and 61 are formed. On the top surface 17 of layer 56, n-ohmics 62 and 63 are formed. For the filn~ nin~. of photo detectorl2andlaserl3,avoltageof+3to+5voltsisappliedtocontactsS8andS9. A
ground or reference voltage of æro volts is applied to contacts 60 and 61 and a minus voltage of 3-4 volts is applied to contact 62 and 63.
InGaAlP/lnGaP materials may be utilized to construct a VCSEL which emits light at 650 l, ,. .., ~ f. . .~., as shown in figure 4. This device 85 uses a GaAs photo detector layer 64 on the bonom or back side I S, and a contact scheme is used to achieve the result of an integrated photo detector 12.
VCSEL's emitting light at 650-980 nanometers may be fabricated from InGaAs/AlGaAs/InGaAlP materials as noted in figures 4, 5 and 6. Such devices 85, 90 and 100 can be designed to emit most of the light from either the top or the bottom surface of wafer of laser 13. Device 13 may be turned upside-down, with a p-typemirror 125 at the top, and intracavity n-type contacts 128 and 129, and a p-type photo detector layer 109 as shown in figure 6.
Figure 4 shows a laser 13 emitting at 650 nanometers with a photo conducting detector 12. Detector 12 is formed with a layer of 1000 nanometers of n-doped GaAs -~ WO 95118479 2 1 7 9 5 1 9 PCT/US94/14472 having a doping rnnr~ntrAtinn from sx1017 to Ix10l8 atoms per cm3. Formed on layer 64 is layer 65 having a thickness of 46.8 nAnnm~t~rC (~/4) of undoped Alo sGao sAs material. Formed on layer 65 is layer 66 having a thickness of 53 . I ~ lA. ,. ", l~t~ J4) of undoped AlAs material. This pair of layers 65 and 66 is repeated 39 times. Situated on 5 the top layer 66 after repeating of these layers is layer 67 which is p-doped Ino 4g(Alo 3Ga0 7)0 s2P having a doping ~A.nnrrntrAti~A,n of 2X1018 atoms per cm3 and having a thickness 7~/4. Layers 65, 66 and 67 form stack 68. Formed on layer 67 is layer 69 having a thickness of 90.2 ~ arld being of an undoped material Ino 4g(Alo 7Gao 3)0 s2p A 6 nanometer layer 70 ~ umdoped Ino.s4Gao.46P
material is formed on layer 69. On layer 70 is a 7 nanometer layer 71 of undopedIno 48(Alo 7Gao 3)0 s2P. On that layer 71 is formed a layel 70. Layer 71 is formed on layer 70, and on layer 71 is formed layer 70, and finally on layer 70 is formed a layer 72. All layers 70 have the same thicknesses and constitute the same material and all layers 71 have the same thicknesses and constitute the same material. Layer 72 has a thickness of 54.8 l lA. ,.. l~ . ~ arld is undoped Ino 4g(Alo 7Gao 3)0 s2P. Layers 69, 70, 71 and 72 form stack 73. Stack 73 has a thickness of 5~4 for a laser wavelength of 650 . ~ ,. -., .- " .. ~ 5~14 = ~ j (layerj thic~ness - refractive indexj ), where i designates each individual layer.
Formed on layer 72 of stack 73 is layer 74 having a thickness of 53.1 "A. ,.. t ~ (~4) of n-doped AlAs having a doping ~ . of lxl01 8 atoms per cm3. On layer 74 is formed a layer 75 having a thickness of 46.8,,- ....,.rlr~ /4) of n-doped Alo sGao sAs having a doping . ~ of lxlol 8 atoms per cm3. This pair of layers 74 amd 75 is repeated 28 times. On the most recently formed layer 75 is formed a layer 76 having a thickness of 53 . I l . .. t . ~ (~/4) of n-doped AlAs having a doping cnnr~ntrAtinn of 1x1018 atoms per cm3. On layer 76 is formed layer 77 having a thickness of 46.8 l. --,.. - ' ~ (~4) of n-doped Alo soGao soAs having a doping rnnr~ntr,tinn of> lx1019 atoms per cm3. Layers 74, 75, 76 and 77 fomm stack 78 which is situated on stack 73. Stacks 78 and 73 are etched to form a mesa on layer 67. Layers 65, 66 and 67, which form stack 68, are etched to form a mesa on layer 64.
30 On the surface of layer 64 on both sides of the mesa of stack 68, is formed an n-ohmic contact 79 and an n-ohmic contact 80. On the surface of layer 67 on each side of stack 73 is formed a p-ohmic contact 81 and a p-ohmic contact 82. On surface 17 of layer 77 2 1 7 9 5 1 9 PCTIUS94/14472 ~
are formed an n-ohmic contact 83 and an n-ohmic contact 84. For the filnr-tioning of laser 13 and photo conducting detector 12, a +5 volt potential is applied to contact 79 and a +3 volt potential is applied to contact 80, a ground or zero voltage reference is applied to contacts 81 and 82, and a -3 to -5 volt potential is supplied to contacts 83 and 84 of ~1 1.1.5.1; ,. ,. .: 85 in figure 4.
Figure S shows r~ c~ 90 of laser 13 integrated with a photo conducting detector 12, for emission at 980 nAnAIm~ tl~rs Layer 86 has a thickness of 1000 I IA~II 1111. ~. ~ ~ and is of n-doped Ino 1 gsGao 81 sAs having a doping ~ n~ ntrAtiA~n from 5x1017to lxl018atomspercm3. Layer86isformedonsemi-conductingorn+GaAs substrate 31. On layer 86 is formed a layer having ~4 thickness of urldoped GaAsmaterial. Formed on layer 87 is layer 88 having a thickness of ~/4 of undoped AlAs material. The pair of layers 87 and 88 is repeated and stacked on top of one another 25 times. On top of the last applied layer of the pairs, layer 88, is a layer 89 having a thickness of 7114 of p-doped GaAs having a doping ~Aonrrntrr~tion of 2xl ol 8 atoms per cm3. Layers 87, 88 and 89 form stack 91.
Formed on layer 89 is a layer 92 having a "y" thickness of undoped A10 soGao soAs material. Formed on layer 92 is layer 93 having a thickness of 8 "~ of undoped Ino 1 gsGao 8IsAs On layer 93 is a layer 94 of 8 IIA 1 of undoped GaAs material. Formed on the latter layer 94 is layer 93 having 8 I IA . ~ of undoped Ino I gsGao~g l sAs material. On the latter layer 93 is a layer 94 having a thickness of 8 nanometers of umdoped GaAs material. On the latter layer 94 is formed layer 93 having a thickness of 8 r~ AA~m~tPrC of undoped Ino 1 gsGao 81 sAs material. On the latter layer 93 is layer 95 having a thickness "x" of undoped Alo soGao soAs material. Layers 92, 93 and 95 form stack 96.
Formed on layer 95 is layer 97 having a thickness of ~/4 of n-doped AlAs having a doping cl~,,f ,I.Al;.,~. of lx1018 atoms per cm3. Formed on layer 97 is layer 98havinga~/40fn-dopedGaAshavingadoping~ nArnt.AtinnoflxlOI8atomsper cm3. Pair of layers 97 and 98 is repeated 17 times on one another. On the latter layer 98 is formed a layer 99 having a thickness of ~/4 of n-doped AlAs having a dopin~
., ,", . .,~ I of lxl ol 8 atoms per cm3. On layer 99 is formed layer 101 having a thickness of ~/4 0f n-doped GaAs having a doping ~ , . of 5x l O l 8 atoms per cm3. Layers 97, 98, 99 and 101 form stack 102.
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Stacks 102 and 96 are etched as a mesa situated on layer 89. Stack 91 is etched as a mesa situated on layer 86. On the surface of layer 86 on both sides of mesa 91 are n-ohmic contact 103 and n-ohmic contact 104. On the surface of layer 89 on both sides of stack 96 are p-ohmic contact 105 and p-ohmic contact 106. respectively. On surface 17 of layer 101 are n-ohmic contact 107 and n-ohmic contact 108. For the fimrtirning ofthe emhodimPnt 90, +5 volts is applied to contact 103 and +3 volts is applied to contact 104. A ground or reference voltage of æro volts is applied to contacts 105 and 106. A minus voltage from -3 to -S volts is applied to contacts 107 and 108.
Figure 6 shows laser 13 emitting at 850 ~ ....,,i;..g a photo 10 conducting detector 12, with the junction flipped over. On semi-insulating or n+GaAs substrate 31 is layer 109 having a thickness of 1000 nanometers of p-doped GaAs havingadopingconcentrationoflxl018 to2x1018atomspercm3. Formedonlayer 109 is layer 110 having a thickness of 60.5 .. - .. ,..,. ~ . ~ (~4) of undoped Alo 1 5Ga0 g5As material. Layer 111 is formed on layer 110, wherein layer 111 has a thicknessof71.1 I-A,.. ,.. rlr.~(~14)ofundopedAlAsmaterial. Thepairoflayers 110 and 111 is repeated 25 times. On the last formed layer 111, layer 112 having a thickrless of 423.5 ..A...., ... ,~ ~ ~ (7~14) of n-doped Alo 1 5Gao gsAs having a doping rr~nrPntr~qti~Alnof2xlol8atomspercm3isformed~ LayersllO,lllandll2constitute stack 135.
Layer 113 having a thickness of 162.8 nqAAlmPfprs of undoped Alo 2sGao 7sAs isformedonlayerll2. Onlayerll3isformedlayerll40f8~ u~ t~ ofthickness of umdoped GaAs material, On layer 114 is formed layer I I S having a thickness of 10 I IA ,. .. "~ of undoped Alo 2sGao 7sAs material On layer 115 is formed layer 1 16 having a thickness of 8 1, ~ of umdoped GaAs material~ Formed on layer 116 is layer 117 having a thickness of 10 ~ of undoped Alo 2sGao 7sAs material.
On layer 117 is layer 118 having a thickness of 8 nanometers of undoped GaAs material. On layer 118 is layer 119 having a thickness of 100.9 nqnnmPfPr~ of undoped Alo 2sGao 7sAs material. Layers 113-119 constitute stack 120.
Formed on layer 119 is layer 121 having athickness of 71.1 nqnr,mPtP~.Ci (?,./4) of p-doped AlAs material having a ~ArnrPnfr,qtinn of 1XIOI8 atoms per cm3. On la~er 121 is layer 122 having a thickness of 60.5 nqnrmPtPrC (~/4) of p-doped Alo 15Gao 85As having a concentration of Ixl ol 8 atoms per cm3. The pair of layers 121 and 122 is .. . , _ _ _ . . . . .
WO 95/18479 2 1 7 9 5 1 9 PCTIUS94/14472 ~
repeated 17 times. On the last formed layer 12~ is forrned layer 123 having a thickness of 71.1 .,~,....,.. t~ /4) of p-doped AlAs material having a l ...,...,l~..l;.", of lxlO18 atoms per cm3. On layer 123 is formed a layer 124 having a thickness of 60.5 "",""". t. ~(~/4)ofp-dopedAlo 15Gao85Ashavingarrlnrrntrr~tir~nof> Ixlol9 atoms per cm3. Layers 121, 122, 123 and 124 constitute stack 125.
Stacks 120 and 125 are etched do~hn as a mesa on layer 112. Stack 135 is etched dovin as a mesa on layer 109. On layer 109 p-ohmic contacts 126 and 127 are formed on surface of layer 109. N-ohmic contacts 128 and 129 are formed on surface of layer 112. P-ohmic contacts 130 and 131 are forrned surface 17 of layer 124. For the r~ ""-,~ of ~ o-l;-,,~ -1 100, -5 volts is applied to contact 126 and -3 volts is applied to contact 127. A ground or æro voltage reference is applied to contacts 128 and 129.
A vol~g ranging from +3 to +5 volts is applied to contacts 130 and 131.
i`il' pn,~ Cilt:OIl pC-'.2iZli 1~l j C,`~l mo-.~tors ?.I,~ i;LZ.lri~ ZO i~s~r -oui-ce 5 pou er monitors Verticai ca-ity surface emitting lasers in fiber optic cnmm~lnir~Ztions require a feedbaci; circuit so that the output power of the laser in the on-state can be mainiained at '- c7nct~nt le~el du.rZn~ a~lbient t~n, eralure ch?.r.resor the agina of ZlZe de~i~-e incorpcrating the la~er. In order to mo;litor Ihe output pouer oZ Ih~ laser, some frzcli~
10 ofthe output ofthe laser must be directed to a sensing device such as a photo detector.
The output of this photo detector or sensing de-ice ~s sent to a control circuit which adjusts the current dnving the laser until the desired output power is achieved For a verticai cavity surface emitting laser, a bearn splitter may be placed at the output of the laser, which would direct some of the light to a photo detector, permitting the rest ofthe 15 iight to be directed into the optic fiber However, this approach reduces the amount of light which can be coupled into the optic fiber This reduction of light being coupled into the optic fber affecls the power margin or requires that the output of the laser and the associated power dissipation be higher than it would othervvise need to be. This po~er monitoring approach increases packaging complexity of such laser source.
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SI~RY 0~ THE INVI~I~'TIO~
The present in-ention eliminates the unnecessary reduction of power in the verticai cavity surface emitting laser (VCSEL) for purposes of output povver monitonnr The invention has a photo detector integrated in the laser which detects the output 25 power from light that would otheruise be lost There is related art disc~osing verticai lasers and photodetectors. European patent application 0 177 617 A1 discloses a junction sPmircndl~rtrZr light-emitting elernent having at least one optical detector European patent application 0 395 315 A7 discloses an electricaiiy pumped verticai ca~ity laser having a distributed Bragg reflector 30 at each side of the cavity An article entiled "Continuous Wave Visib]e InGaPlInGa~iP
Quantum Well Surface Emitting Laser Diodes" by K Huang et al, in IEEE Lasers and- . Electro-Optics Society 1993 Annuai Meeting Conference Proceedings of November 15-18, at San Jose7 Caiifornia, discloses a visible verticai surface emitting iaser having a h~,ZENDED SHEEr 21 795l q Ia structure vi~h fo~r q~antum ~ells as ~lle ac-i; e nne~lium. European patent 2pplic~tion 0 56'i374 AI ~ i~cl~ cs .~ ic~ o-c~ r~ trin~rr~ .;cn c!æctrrphcto.~ic r~ .ice ' ?~ir~ ---Mol~culil-- Be?m rBpila:~ Gro~.. h of.~lCia ~G~ ~s ~.;e. .ic31 ` d~i;y Sur~lcc ,-`inirti:~g S T .asers i~nd the Perfo.-mance of PIN Photodetector Vertical Ca~ity Surface Emitting Laser Integrated Structures," by Y. Wang et al., on pages 3883-3886 in Japanese Journa of.~22!ied Ph~sics. Vol. 30, ~o. I~B, December 1,91, discloses an all-epitaxial p!anar i(-p ~ it l-n~7 m !'.i-~u~-,ru~ ,; rl la .~rs !~i. r~ trlc ~ r;t~ e!! s.-nc~iched ~c ~ n tv~o doped distliruted Brarg refec;ors cha~acter,z-.d by a ;~o-s;ep composition profile.
BRIEF DESCRIPTION OF 1~ DRAW~GS
Figure I sho~vs a basic configuration of the invention.
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AMEN~ED SHEET
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~ WO 9~1184~9 2 1 7 9 5 1 9 PCTIllS94114472 Figure 2 is a cross sectional vie~ of laser emitting at 850 nRnom,-t~rC with an integrated power monitor having a photo conducting detector.
Figure 3 is a cross sectional Yiew of laser emitting at 850 . ~ with ar~
integrated power monitor having a p-i-n detector.
S Figure 4 is a cross sectional view of laser emitting at 650 nRnonnPtrrc with an integrated power monitor having a photo conducting detector.
Figure 5 is a cross sectional view of laser emining at 980 nRnt-m~trr~ with an integrated power monitor.having a photo conducting detector.
Figure 6 is a cross sectional view of laser emitting at 850 I~allul~ a with an integrated power monitor having a photo conducting detector with the junction flipped over.
DF~(~RTPTION OF TFTF. El\~RODIMF.~TS
Figure I shows a photo detector 12 " " ~ ly integrated on the bottom side 15 of a vertical cavity surface emitting laser (VCSEL) 13. Laser 13 is normally designed such that 10 to 20 percent of the emitted light comes out back side 15 and is lost. The providing of a photo detector 12 on back side 15 of laser 13 uses this light 16 which would otherwise be lost. Thus, photo detector 12 has no effect on the amount of light 18 emined from top side 17 of laser 13 which is coupled into and conveyed by optic fiber 19.
Figure 2 reveals an ~. "l .o.l; " .. . ,1 of the invention having integrated laser and photo detector 10. An n-doped photo detector layer 14 is grown first, followed by the forming of an undoped bottom laser mirror 21, a p-type AlGaAs contact layer 22, an undoped active layer 23 having three quantum well layers 24 which are eight 25 I~ thick and each are separated by AlGaAs barrier layers 35, and then a top mirror 20 which is a doped n-type.
Device 13 is fabricated by forming n-ohmic contacts 27 on top surface 17, tllen etching down to the p-type AlGaAs contact layer æ and depositing p-ohmic contacts 25. At this stage, contacts 25 and 27 required for operating the laser are present. Next a 30 second etching step is performed to reach n-type GaAs layer 14 for photo detector 1', and n-ohmic contacts 26 and 29 are deposited at this layer 14. To operate device 10, top ohmic contacts 27 on surface 17 of top mirror 20 are held at a negative bias, while p-ohmic contacts 25 are held at a ground or reference voltage so laser 13 is for~vard-biased.
In the mode of operation, photo detector 12 is used as a photo conductor. In this mode, one of n-ohmic contacts, 26, is held at a positive bias voltage, while an even 5 mo}e positive biased voltage would be applied to the other n-ohmic contact 29. A p-i-n junction between the positively biased n-type detector layer 14 and p-layer 22 of laser 13 would be reverse biased, so a minimum current would flow. Photons which are incident on photo detector layer 14 and are absorbed are converted to a current which is collected by metal contacts 26 and 29.
For photo detector 12, about 1000 nanometers of n-doped GaAs 14 is formed on a semi-insulating or n+doped GaAs substrate 31. The doping level of layer 14 is from SxlO17tolxlO18atomspercm3. Situatedonlayerl4is60.5~ ".1~ of undoped Alo 1 5Gao gsAs material 32. On layer 32 is situated a 71.1 nanometer undoped AlAs layer 33. Layers 32 and 33 are ~/4 thick for a wavelength of 850 nAnomPtPrs. ~4 means the wa~ ;ill of the source divided by four and the refractive index of thelayer. Layers 32 and 33 are repeated 25 times on top of each other. This ef~mril~til~n of 26 pairs of layers 32 and 33 plus a layer 22 is stack 21. On top of these layers is formed 423 .5 . ,, ,. ." ,. ~ of Alo 1 sGao gsAs of layer 22 and is part of stack 21. Layer 22 is p-dopedat2xl018atomspercm3. Ontopoflayer22islayer34whichisl62.8nrnof undoped Alo 2sGao 75As On layer 34 is first layer 24 of eight l ,,- - " " l ~ . ~ of undoped GaAs layer. On layer 24 is 10 1, "..". t` .~ of Alo 2sGao 7sAs of undoped material 35.
Situated on layer 35 is another second layer 24 of eight l.-. " ." .. .'. . ~ undoped GaAs. On layer 24 is undoped Alo 2sGao 7sAs material layer 35. Situated on layer 35 is another third layer 24 of eight .,"...~ of undoped GaAs material. On that layer 24 is layer 25 36 of 100.9 l~--"~".. ll .~ of undoped Alo 2sGao 7sAs material. Layers 24, 34, 35, and 36 form stack 23 which has a thickness of 5~/4.
5~14 = ~i (la,ver t~2ickness reJractive index; ) . Situated on stack ~ 3 is stack 20. Of stack 20, situated on layer 36 is layer 37 of 71.1 nanometers of n-doped AlAs having doping leveloflxlO18atomspercm3. Formedonlayer37,islayer380f~/4n-doped Alo 1 sGao gsAs material at a doping level of I xl o l 8 atoms per cm3 . Layer 38 is 60.5 l ,~. " .. ". . . ~ thick. The pair of layers 37 and 3 8 are repeated l 7 times to form at least a part of stack 20. Layer 39 is of the same thickness and ~ of layer 37 and is ~` 2 1 79 5 1 q forrned on latter layer 38. Formed on layer 39 is layer 40 of 60.5 rlanometers or a quarter wavelength of n-doped AIxGax I As material where x = 0.15 and the dopinglevel is > Ix1019 atoms per cm3. Pairs of layers 37 and 38 plus layers 39 and 40constitute stack 20. After the stacks 20 and 23 are completed they are etched as a mesa down to layer 22. Stack 21, including layer 22, is itself etched dov~n at a wider width as a mesa on layer 14. On layer 14 outside the mesa of stack 21, n-ohmic contact 29 is formed on layer 14 on one side of the mesa and n-ohmic contact 26 is formed on the other side of the mesa of stack 21. On layer 22, having the mesa constituted by stacks 20 and 23, is a p-ohmic contact 25 placed at one side of tbat mesa and p-ohmic contact 25 placed at the other side of the mesa. On layer 40 on surface 17 a pair of n-ohmic contacts 27 are formed. For rl" . ~ ;, .p of device 10, a potential of -3 to -4 volts is applied to contacts 27, the ground or a zero-reference voltage is applied to contacts '25, a +3 volts is applied to contact 26 and a +5 volts is applied to contact 29.
The fabrication process is as follows. The single crystal epitaxial layers required for the laser 13 and photo detector 12 structure may be grown by MBE (Molecular Beam Epitaxy) or OMVPE (Organo-Metallic Vapor Phase Epitaxy). The UUlllUO~;IiUllis graded at the interfaces between layers of different çnmro~itif~n in order to reduce the resistance through the mirrors.
After epitaxial growth is complete, a mesa of stack 20 is etched down to p-contact layer 22 by using rh~-t--lith~r~lrhy to pattern the wafer surface, and etching the exposed surfaces using chlorine-gas based reactive ion etching. rhe etching produces vertical sidewalls which provide the optical c.~..,r",~ .". .1 to the device. The sample is then patterned a second time using photoresist to delineate the regions where contacts 25 are to lie. A p-ohmic metal contact 25 is deposited, with the bottom layer of the 25 contact metal consisting of gold and zinc to provide a low resistance contact. A
chemical liftoffprocess removes the metal from unwanted regions. The sample is once again patterned using photoresist, such that the first mesa and each ohmic contact 25 are protected. Again, the exposed region is etched using the chlorine-based reactive ion etching to reach the bottom detector layer 14. Here, n-ohmic contacts 26 and 25 are 30 deposited using the liftoffprocess described above.
The sample is then planariæd by spinning on a self-leveling polymer layer to cover the mesa, and then etching back this polymer to reveal the top surface of the mesa.
~ W0 95118479 2 1 7 9 5 1 9 PCT/DS94/14 172 The n-ohrnic contacts 26 and 29 are then patterned and lifted off as described abo~ e.
Anothe} rhntf~lithl-~raphy step may be used to connect the ohlnic metals to a bond pad some distance from the device. An annealing step is requi}ed to form low resistance ohrnic contacts.
Figure 3 shows a device 30 which is configured as a VCSEL combined with a p-i-n photo detector 12. In this ~ " ..1;..,. bottom mirror layers 47 are doped p-type, and an extra GaAs layer 42, which can be a very lightly doped n-type, is inserted between p-type mirror layers 44 and 45 and n-type GaAs layer 41 (to which contacts 5 8 and 59 are made). Both n-ohmic contacts to photo detector 12 on side 15 are at the 10 sarne positive bias voltage so that a reverse biased p-n junction is formed and undoped or lightly doped n-layer 42 is the absorbing layer of photo detector 12. Laser 13 of figure3emitslightat~,uulu~illl..t.,1y8501,~.,..,.,~t,.~fromtopsurfacel70flayer56.
Other r~-mro~ition~, II.h,h~ and doping ~.. ~ .~1., l;.. "~ in devices 12 and 13 of figures 2 and 3 may vary.
For device 30 in figure 3, on semi-insulating n+GaAs substrate 31 is forrned laye} 41 having 1000 ,~ ,.., ., f~ ' of n-doped GaAs material having a doping level of I -2xlO18atomspercm3. Onlayer41isformedalOOOI,-".".r~ of undopedGaAs material as layer 42. On layer 42 is a layer 43 having a 71. I 1.~ .., .., .. 1.. ~ of AlAs having a doping level Ixl ol 8 atoms per cm3. This layer 43 has a thickness of ~/4 times refractive index of the AlAs at a wavelength of 850 1, ,. ., ., ~ . Situated on layer 43 is a quarter Wd~ 1 (i.e., 60.5 ., - - ,.. ~ .. ~) of p-doped Alo 1 sGao gsAs material havingadopingleveloflxl018atomspercm3,aslayer44. Thepairoflayers43and 44 are repeated about 25 times. Situated on top of the lastly forrned layer 44 is layer 45 having a 71. I nanometer thickness or ~/4 thickness of p-doped AlAs material having a doping level of 1 xl 0 1 8 atoms per cm3 . Situated on layer 45 is a 7~14 or 423 .5 nanometerthicknessofAlo,lsGaogsAsp-dopedatalevelof2xlO18atomspercm3as layer 46. Layers 42, pairs of layers 43 and 44, layer 45 and layer 46 constitute stack 47.
On layer 46 is formed 162.8 .. - .. : . ~ of undoped Alo 2sGao 7sAs as layer 48.
Another layer 49 of 8 nanometers on umdoped GaAs is formed on layer 48. On layer 49 is formed another layer 50 of 10 ~ u~ of undoped Alo 2sGao 7sAs material. On layer 50 is formed another layer 49 of 8 nanometers of undoped GaAs material. On layer 49 is formed another layer SO of lO ",.. r~ of undoped Alo 2sGao 7sAs ~ 2t79519 WO 95/1~479 PCI/IJS94/14472 material. On layer 50 is formed another layer 49 of 8 nanometers of undoped GaAsmaterial. On layer 49 is layer Sl of 100.9 nanometers of undoped Alo 2sGao 7sAs material. Layers 48, 49, 50 and S l make up stack 52 which has a thickness of S~/4 which is equal to ~ j (iayer, thicl~ess - re~racf ive index, ) . Fomned on layer S l is layer 53 5 whichis71.1 ~ /4)ofn-dopedAlAshavinga~ ,ofdopingat IxlO18atomspercm3. Formedonlayer53islayerS4whichis60.5., --llll f~ l4) of n-dopedAlo IsGaogsAshavingadopingç~nr~nfr~tirnoflxlO]8atomspercm3.
Layers 53 and 54 are repeated about 17 times on stack 52. On top layer 54 is layer SS
which is 71. I ",- ,. ,, . ,- l~ ~ (~/4) of n-doped AlAs having a doping ~ . " ,. . . Il . ,.~ ;"" of lxl018atomspercm3. SituatedonlayerSSislayerS6havingathicknessof60.5 /4) of n-doped Alo 1 5Ga0 85As having a doping Conerntr~tion of >
1x1019 atoms per cm3. The pairs of layers 53 and 54, and layers SS and 56 constitute stack 57. Stacks 57 and 52 are etched into a mesa situated on layer 46 and stack 47 is etched down as a mesa situated on layer 41. On each side of stack 47 on layer 41 n-I S ohmic contacts 58 ~md 59 are formed. On layer 46 on both sides of the mesa stacks 57 and 52, p-ohmic contacts 60 and 61 are formed. On the top surface 17 of layer 56, n-ohmics 62 and 63 are formed. For the filn~ nin~. of photo detectorl2andlaserl3,avoltageof+3to+5voltsisappliedtocontactsS8andS9. A
ground or reference voltage of æro volts is applied to contacts 60 and 61 and a minus voltage of 3-4 volts is applied to contact 62 and 63.
InGaAlP/lnGaP materials may be utilized to construct a VCSEL which emits light at 650 l, ,. .., ~ f. . .~., as shown in figure 4. This device 85 uses a GaAs photo detector layer 64 on the bonom or back side I S, and a contact scheme is used to achieve the result of an integrated photo detector 12.
VCSEL's emitting light at 650-980 nanometers may be fabricated from InGaAs/AlGaAs/InGaAlP materials as noted in figures 4, 5 and 6. Such devices 85, 90 and 100 can be designed to emit most of the light from either the top or the bottom surface of wafer of laser 13. Device 13 may be turned upside-down, with a p-typemirror 125 at the top, and intracavity n-type contacts 128 and 129, and a p-type photo detector layer 109 as shown in figure 6.
Figure 4 shows a laser 13 emitting at 650 nanometers with a photo conducting detector 12. Detector 12 is formed with a layer of 1000 nanometers of n-doped GaAs -~ WO 95118479 2 1 7 9 5 1 9 PCT/US94/14472 having a doping rnnr~ntrAtinn from sx1017 to Ix10l8 atoms per cm3. Formed on layer 64 is layer 65 having a thickness of 46.8 nAnnm~t~rC (~/4) of undoped Alo sGao sAs material. Formed on layer 65 is layer 66 having a thickness of 53 . I ~ lA. ,. ", l~t~ J4) of undoped AlAs material. This pair of layers 65 and 66 is repeated 39 times. Situated on 5 the top layer 66 after repeating of these layers is layer 67 which is p-doped Ino 4g(Alo 3Ga0 7)0 s2P having a doping ~A.nnrrntrAti~A,n of 2X1018 atoms per cm3 and having a thickness 7~/4. Layers 65, 66 and 67 form stack 68. Formed on layer 67 is layer 69 having a thickness of 90.2 ~ arld being of an undoped material Ino 4g(Alo 7Gao 3)0 s2p A 6 nanometer layer 70 ~ umdoped Ino.s4Gao.46P
material is formed on layer 69. On layer 70 is a 7 nanometer layer 71 of undopedIno 48(Alo 7Gao 3)0 s2P. On that layer 71 is formed a layel 70. Layer 71 is formed on layer 70, and on layer 71 is formed layer 70, and finally on layer 70 is formed a layer 72. All layers 70 have the same thicknesses and constitute the same material and all layers 71 have the same thicknesses and constitute the same material. Layer 72 has a thickness of 54.8 l lA. ,.. l~ . ~ arld is undoped Ino 4g(Alo 7Gao 3)0 s2P. Layers 69, 70, 71 and 72 form stack 73. Stack 73 has a thickness of 5~4 for a laser wavelength of 650 . ~ ,. -., .- " .. ~ 5~14 = ~ j (layerj thic~ness - refractive indexj ), where i designates each individual layer.
Formed on layer 72 of stack 73 is layer 74 having a thickness of 53.1 "A. ,.. t ~ (~4) of n-doped AlAs having a doping ~ . of lxl01 8 atoms per cm3. On layer 74 is formed a layer 75 having a thickness of 46.8,,- ....,.rlr~ /4) of n-doped Alo sGao sAs having a doping . ~ of lxlol 8 atoms per cm3. This pair of layers 74 amd 75 is repeated 28 times. On the most recently formed layer 75 is formed a layer 76 having a thickness of 53 . I l . .. t . ~ (~/4) of n-doped AlAs having a doping cnnr~ntrAtinn of 1x1018 atoms per cm3. On layer 76 is formed layer 77 having a thickness of 46.8 l. --,.. - ' ~ (~4) of n-doped Alo soGao soAs having a doping rnnr~ntr,tinn of> lx1019 atoms per cm3. Layers 74, 75, 76 and 77 fomm stack 78 which is situated on stack 73. Stacks 78 and 73 are etched to form a mesa on layer 67. Layers 65, 66 and 67, which form stack 68, are etched to form a mesa on layer 64.
30 On the surface of layer 64 on both sides of the mesa of stack 68, is formed an n-ohmic contact 79 and an n-ohmic contact 80. On the surface of layer 67 on each side of stack 73 is formed a p-ohmic contact 81 and a p-ohmic contact 82. On surface 17 of layer 77 2 1 7 9 5 1 9 PCTIUS94/14472 ~
are formed an n-ohmic contact 83 and an n-ohmic contact 84. For the filnr-tioning of laser 13 and photo conducting detector 12, a +5 volt potential is applied to contact 79 and a +3 volt potential is applied to contact 80, a ground or zero voltage reference is applied to contacts 81 and 82, and a -3 to -5 volt potential is supplied to contacts 83 and 84 of ~1 1.1.5.1; ,. ,. .: 85 in figure 4.
Figure S shows r~ c~ 90 of laser 13 integrated with a photo conducting detector 12, for emission at 980 nAnAIm~ tl~rs Layer 86 has a thickness of 1000 I IA~II 1111. ~. ~ ~ and is of n-doped Ino 1 gsGao 81 sAs having a doping ~ n~ ntrAtiA~n from 5x1017to lxl018atomspercm3. Layer86isformedonsemi-conductingorn+GaAs substrate 31. On layer 86 is formed a layer having ~4 thickness of urldoped GaAsmaterial. Formed on layer 87 is layer 88 having a thickness of ~/4 of undoped AlAs material. The pair of layers 87 and 88 is repeated and stacked on top of one another 25 times. On top of the last applied layer of the pairs, layer 88, is a layer 89 having a thickness of 7114 of p-doped GaAs having a doping ~Aonrrntrr~tion of 2xl ol 8 atoms per cm3. Layers 87, 88 and 89 form stack 91.
Formed on layer 89 is a layer 92 having a "y" thickness of undoped A10 soGao soAs material. Formed on layer 92 is layer 93 having a thickness of 8 "~ of undoped Ino 1 gsGao 8IsAs On layer 93 is a layer 94 of 8 IIA 1 of undoped GaAs material. Formed on the latter layer 94 is layer 93 having 8 I IA . ~ of undoped Ino I gsGao~g l sAs material. On the latter layer 93 is a layer 94 having a thickness of 8 nanometers of umdoped GaAs material. On the latter layer 94 is formed layer 93 having a thickness of 8 r~ AA~m~tPrC of undoped Ino 1 gsGao 81 sAs material. On the latter layer 93 is layer 95 having a thickness "x" of undoped Alo soGao soAs material. Layers 92, 93 and 95 form stack 96.
Formed on layer 95 is layer 97 having a thickness of ~/4 of n-doped AlAs having a doping cl~,,f ,I.Al;.,~. of lx1018 atoms per cm3. Formed on layer 97 is layer 98havinga~/40fn-dopedGaAshavingadoping~ nArnt.AtinnoflxlOI8atomsper cm3. Pair of layers 97 and 98 is repeated 17 times on one another. On the latter layer 98 is formed a layer 99 having a thickness of ~/4 of n-doped AlAs having a dopin~
., ,", . .,~ I of lxl ol 8 atoms per cm3. On layer 99 is formed layer 101 having a thickness of ~/4 0f n-doped GaAs having a doping ~ , . of 5x l O l 8 atoms per cm3. Layers 97, 98, 99 and 101 form stack 102.
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Stacks 102 and 96 are etched as a mesa situated on layer 89. Stack 91 is etched as a mesa situated on layer 86. On the surface of layer 86 on both sides of mesa 91 are n-ohmic contact 103 and n-ohmic contact 104. On the surface of layer 89 on both sides of stack 96 are p-ohmic contact 105 and p-ohmic contact 106. respectively. On surface 17 of layer 101 are n-ohmic contact 107 and n-ohmic contact 108. For the fimrtirning ofthe emhodimPnt 90, +5 volts is applied to contact 103 and +3 volts is applied to contact 104. A ground or reference voltage of æro volts is applied to contacts 105 and 106. A minus voltage from -3 to -S volts is applied to contacts 107 and 108.
Figure 6 shows laser 13 emitting at 850 ~ ....,,i;..g a photo 10 conducting detector 12, with the junction flipped over. On semi-insulating or n+GaAs substrate 31 is layer 109 having a thickness of 1000 nanometers of p-doped GaAs havingadopingconcentrationoflxl018 to2x1018atomspercm3. Formedonlayer 109 is layer 110 having a thickness of 60.5 .. - .. ,..,. ~ . ~ (~4) of undoped Alo 1 5Ga0 g5As material. Layer 111 is formed on layer 110, wherein layer 111 has a thicknessof71.1 I-A,.. ,.. rlr.~(~14)ofundopedAlAsmaterial. Thepairoflayers 110 and 111 is repeated 25 times. On the last formed layer 111, layer 112 having a thickrless of 423.5 ..A...., ... ,~ ~ ~ (7~14) of n-doped Alo 1 5Gao gsAs having a doping rr~nrPntr~qti~Alnof2xlol8atomspercm3isformed~ LayersllO,lllandll2constitute stack 135.
Layer 113 having a thickness of 162.8 nqAAlmPfprs of undoped Alo 2sGao 7sAs isformedonlayerll2. Onlayerll3isformedlayerll40f8~ u~ t~ ofthickness of umdoped GaAs material, On layer 114 is formed layer I I S having a thickness of 10 I IA ,. .. "~ of undoped Alo 2sGao 7sAs material On layer 115 is formed layer 1 16 having a thickness of 8 1, ~ of umdoped GaAs material~ Formed on layer 116 is layer 117 having a thickness of 10 ~ of undoped Alo 2sGao 7sAs material.
On layer 117 is layer 118 having a thickness of 8 nanometers of undoped GaAs material. On layer 118 is layer 119 having a thickness of 100.9 nqnnmPfPr~ of undoped Alo 2sGao 7sAs material. Layers 113-119 constitute stack 120.
Formed on layer 119 is layer 121 having athickness of 71.1 nqnr,mPtP~.Ci (?,./4) of p-doped AlAs material having a ~ArnrPnfr,qtinn of 1XIOI8 atoms per cm3. On la~er 121 is layer 122 having a thickness of 60.5 nqnrmPtPrC (~/4) of p-doped Alo 15Gao 85As having a concentration of Ixl ol 8 atoms per cm3. The pair of layers 121 and 122 is .. . , _ _ _ . . . . .
WO 95/18479 2 1 7 9 5 1 9 PCTIUS94/14472 ~
repeated 17 times. On the last formed layer 12~ is forrned layer 123 having a thickness of 71.1 .,~,....,.. t~ /4) of p-doped AlAs material having a l ...,...,l~..l;.", of lxlO18 atoms per cm3. On layer 123 is formed a layer 124 having a thickness of 60.5 "",""". t. ~(~/4)ofp-dopedAlo 15Gao85Ashavingarrlnrrntrr~tir~nof> Ixlol9 atoms per cm3. Layers 121, 122, 123 and 124 constitute stack 125.
Stacks 120 and 125 are etched do~hn as a mesa on layer 112. Stack 135 is etched dovin as a mesa on layer 109. On layer 109 p-ohmic contacts 126 and 127 are formed on surface of layer 109. N-ohmic contacts 128 and 129 are formed on surface of layer 112. P-ohmic contacts 130 and 131 are forrned surface 17 of layer 124. For the r~ ""-,~ of ~ o-l;-,,~ -1 100, -5 volts is applied to contact 126 and -3 volts is applied to contact 127. A ground or æro voltage reference is applied to contacts 128 and 129.
A vol~g ranging from +3 to +5 volts is applied to contacts 130 and 131.
Claims (2)
1. An integrated laser power monitor (10, 30, 85, 90, 100) comprising a substrate (31), a photo detector (12); and a vertical cavity surface emitting laser (13); and wherein:
said substrate (31) is a layer of semi-insulating GaAs or n+doped GaAs;
said photo detector (12) comprises a layer of GaAs; and said vertical cavity surface emitting laser source (13) comprises:
a first mirror, at the first end of said source, formed on said photo detector, having a stack (21, 47, 68, 91, 135) of alternating layers composed of first and second materials, respectively;
a cavity, formed on said first mirror, having a stack (23, 52, 73, 96, 120) of alternating layers composed of third and fourth materials, respectively;
and a second mirror, at the second end of said source, formed on said cavity, having a stack (20, 57, 78, 102, 125) of alternating layers composed of fifth and sixth materials, respectively.
characterized by said photo detector (12) formed on said substrate (31);
said vertical cavity surface emitting laser source (13) having a first end (15) formed on said photo detector (12), said laser source (13) having a second end (17) for emission of light (18);
said photo detector (12) for detecting leaked light (16) form the first end (15) and indicating output power of light (18); and said photo detector (12) and said laser source (13) having a structure such that said photo detector (12) has a first direction of biasing and said laser source (12) has a second direction of biasing.
said substrate (31) is a layer of semi-insulating GaAs or n+doped GaAs;
said photo detector (12) comprises a layer of GaAs; and said vertical cavity surface emitting laser source (13) comprises:
a first mirror, at the first end of said source, formed on said photo detector, having a stack (21, 47, 68, 91, 135) of alternating layers composed of first and second materials, respectively;
a cavity, formed on said first mirror, having a stack (23, 52, 73, 96, 120) of alternating layers composed of third and fourth materials, respectively;
and a second mirror, at the second end of said source, formed on said cavity, having a stack (20, 57, 78, 102, 125) of alternating layers composed of fifth and sixth materials, respectively.
characterized by said photo detector (12) formed on said substrate (31);
said vertical cavity surface emitting laser source (13) having a first end (15) formed on said photo detector (12), said laser source (13) having a second end (17) for emission of light (18);
said photo detector (12) for detecting leaked light (16) form the first end (15) and indicating output power of light (18); and said photo detector (12) and said laser source (13) having a structure such that said photo detector (12) has a first direction of biasing and said laser source (12) has a second direction of biasing.
2. The integrated laser power monitor of claim 1 wherein the first direction ofbiasing is reversed biasing and the second direction of biasing is forward biasing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/175,016 | 1993-12-29 | ||
| US08/175,016 US5475701A (en) | 1993-12-29 | 1993-12-29 | Integrated laser power monitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2179519A1 true CA2179519A1 (en) | 1995-07-06 |
Family
ID=22638487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002179519A Abandoned CA2179519A1 (en) | 1993-12-29 | 1994-12-16 | Integrated laser power monitor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5475701A (en) |
| EP (1) | EP0737376B1 (en) |
| JP (1) | JPH09507339A (en) |
| CA (1) | CA2179519A1 (en) |
| DE (1) | DE69409834T2 (en) |
| WO (1) | WO1995018479A1 (en) |
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-
1993
- 1993-12-29 US US08/175,016 patent/US5475701A/en not_active Expired - Lifetime
-
1994
- 1994-12-16 WO PCT/US1994/014472 patent/WO1995018479A1/en active IP Right Grant
- 1994-12-16 JP JP7518088A patent/JPH09507339A/en active Pending
- 1994-12-16 CA CA002179519A patent/CA2179519A1/en not_active Abandoned
- 1994-12-16 DE DE69409834T patent/DE69409834T2/en not_active Expired - Lifetime
- 1994-12-16 EP EP95904920A patent/EP0737376B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5475701A (en) | 1995-12-12 |
| WO1995018479A1 (en) | 1995-07-06 |
| JPH09507339A (en) | 1997-07-22 |
| DE69409834T2 (en) | 1998-09-17 |
| EP0737376B1 (en) | 1998-04-22 |
| DE69409834D1 (en) | 1998-05-28 |
| EP0737376A1 (en) | 1996-10-16 |
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| Date | Code | Title | Description |
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| FZDE | Discontinued |