CA2199282A1

CA2199282A1 - Field emitter liquid crystal display

Info

Publication number: CA2199282A1
Application number: CA002199282A
Authority: CA
Inventors: Kalluri R. Sarma; Akintunde I. Akinwande
Original assignee: Individual
Current assignee: Honeywell Inc
Priority date: 1994-10-31
Filing date: 1995-10-20
Publication date: 1996-05-09
Also published as: DE69504860T2; JPH10508120A; EP0789856A1; DE69504860D1; JP3933686B2; WO1996013753A1; EP0789856B1; US5646702A

Abstract

A liquid crystal display having pixels illuminated by field emitter arrays (100). The field emitter arrays may be utilized to illuminate each pixel individually or to be a backlight lamp to illuminate the whole display, whether monochrome or color. A field emitter array back-lighted liquid crystal displays, whether active matrix or passive, provide greater compactness, higher luminous efficiency, more brightness, and longer lifetime than a fluorescent lamp. Field emitter arrays may also provide light in various colors for the liquid crystal display thereby eliminating the need for color filters which result in duller colors than that of field emitter arrays. Each color filter absorbs two-thirds of the light that it receives. A color filter liquid crystal color display exhibits colors that have diminished chromaticity and purity in comparison to those of a field emitter array liquid crystal display.

Description

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-'-02 199 282 FTELD ~R L~ CRYST~L D~SPLAY

~C~Ci~O~ OF T~ ~TION
The p~ont i..vcl~lio~ to di~ y~ d p~ti~ularly to ~ di~play~.
S More p rticubrly, thc imentlon patain~ to ~ fl~t p~ l U~lui~l cryst-l d~ y h~
r~ nd ~ with low pow~ can~umpt;on.
~ o ~ail~lc ebctr~c di~piay moets the ~ not~ characteristic~ nood~d for a n~ode~n ~vionic~ di-p~ay. The c-~dt t~y h~C ~CRT~ h~ a hi~h hminou~ ef~iency~
Ju~or contra~t r~t~ u)d excellent ~g ~ngla. ~IGW~,~Cr, tWO d~ ;e,.~ Of thC
10 CRT ~re ~he bulk ofthe ~Icclro~l gun uld lar~e pow~ u~e by the ~fl~tir~ mpli~er~.
Thc~e lus boon ~h effohf ~-~cd ov~r tho yo~r~ to develop ~ ~at CRT. Two ~ppr~ ~1~ in the d~ . hy...~cnt invo~vod, fl~d, fold~ the d ccl~r, ~n uound to be in p~ll~l w~th the t~ fwe; nd ocond, producu~ ~n ebctron ~n for e ch pixel by m~ of ~n are~ ~-f~ and ~ ~d ~ m. O~tbe# ppre ~ _L~, thc ~rst onc w~
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ve dawn~t~tcd the u~ cono field emittor ~*~y (~FeA) ~g thc uc~l c~thode. 11~ .. e.~u, both ~ d thc CF~ de~ do not u~e hi~b lun~ nou~
20 ~fflc~ ~'l D~ om which one c-n obt in ~om cl~t~ ,~ by ~mph~n~
~ high volta~e ~node arcuit. The CFE~ de~icc c~ot uso ~ h volt-~ ~nodc of relhhi~i~ p.,J~ e to field fo~A~d ofthc en~ittor ~p ~1 emitter e~o~ion bypu~ti~lo~ d~cd, f;om i~ co~ by ol~lr~m.
Un~ted S~e~ p tcnt US~ ,3~7,201 di-clo~ ~ di~play ~t u~e~ pulJe~ of 2S ~i~ om a fiold crnittcr ~ y ~nd Yefy hi~h ~ood liquid c~y~ttl PLXOI5 tn ~cnorate cdor ~ga. Such ~ display rcqui~a ~ializod con~o~)c~ r, to 0wrc th~t th baGklight pul~ re ~ rty bl~od u~d i~med.
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~ WO96/13753 0 2 ~ 9 9 2 8cr/usgs/l3329 sources for one or more cathodoluminescent screens. The advantages of the present lamp over previous field emitter arrays are that the radius of curvature of the emitter is ~let~rminP~l by film deposition resulting in better uniformity and higher current densities, the series resistor for current bias is easier to implement, the fabrication process is based on integrated circuit (IC) and microm~rhining processes that lead to lower cost m~nllf~ctl-ring, emitter burnout is elimin~te~l by using an on-chip focusing electrode which provides for higher reliability and yield, and higher luminous efficiency results because of the use of high voltage phosphors.
Other advantages of this invention are high brightn.?s~ and high contrast because electron emission current increases exponentially with increasing voltage, leading to high bri~htnes~, large dynamic range and high transconductance with the use of thin-film-edge emitters and high-voltage phosphors. Ailso there is high-yield manufacturing since each liquid crystal pixel may consist of a field emitter array lamp having more than 100 emitting edges leading to a high degree of re~ n-l~ncy. Only a current density of < 511A/cm~ is required for a bri~htnees of 1000 fL, assuming a screen voltage of 15 kilovolts and luminous efficiency of 20 lumen/waff. ~lectrical current equalization resistive elem~nt~ prevent a single failure from pulling the lamp or line/row of lamps low, leading to a sufficient defect-tolerant field em;tter array lamp liquid crystal display fabrication process.
The edge emitters of the array lamp do not suffer from the deleterious effects of field forming and particle inAllceA desorbtion emitter erosion. Hence, the device can use high-voltage phosphors without any reliability problems. This allows the use of more efficient phosphors and consequently lower power operation for the same brightness and permits high-resolution proximity focusing of the emitted electrons.
High-voltage phosphors have long lifetimes because they require less current, and high luminous efficiency phosphors lead to low power consumption.
The field edge emitter array is a lamp that fwnctions as a backlight for a liquid crystal display, in lieu of the usual fluorescent lamp, in a monochrome liquid crystal display, or in a color liquid crvstal display having color filters. Such application of the field emitter array may be in the active matrix liquid crystal display as well as in the passive display not having the pixel switching thin film transistors.

-3- 0 ~2 1 9 9 2 8 2 The field emitter array lamp has the capability to provide b~cklieht for an avionics display, requiring a briehtness of 5000 foot-Lamberts to deliver a display lumin~n~e of 150 to 250 foot-Lamberts. The present common b~ckli~ht technology is the tubular fluorescent lamp which requires optical elements such as a reflector, S collimator and a diffuser to obtain good ~ irOllllity, but results in a bulky backlight having a low luminous efficiency of less than ten lumens per watt. However, a costly high-bnghtn~s~ flat fluorescent lamp having a hollow cathode can elimin~te the need for some of the optical elements, and have a luminous efficiency of 16 lumens per watt and a Illmin~nre of 3000 foot Lamberts. Yet, the high-briehtneec fluorescent larnp has a typical lifetime of only 1000 hours because of significant cathode erosion. The fluorescent b~clrlieht typically needs a thermoelectric device and a temperaturecontroller to regulate cold spot t~ eldl~lre to about 43 degrees Centigrade to avoid intolerable inefficient discharge. A fluorescent lamp used in avionics and space liquid crystal displays requires a therrnoelectric device and telllpe~d~llre controller to regulate the cold spot t~ .eldlul~, and a heater and controller for enabling low-lelllp~ldluf~
start-up of the fluorescent lamp. Further, a ballast Cil~;Uilly iS required for rlimming, ar d a diffuser is needed to obtain illumination uniforrnity which results in lower briehtn~s~
and lower luminous efficiency of this lamp.
The field emitter array b~c~ ht or lamp does not require the optical elements, including the diffuser, and the cooling and heating devices that the fluorescent b~ckli~ht needs. The field emitter array has simple ~limming control circuitry due the high transconrll~ct~nce of the field e~ L~l~. Longer lifetime and higher reliability is had with the field emitter array when coln~ ed to the fluorescent lamp. The field emitter array lamp and the fluorescent larnp have, respectively, 5000 foot-Lamberts and 3000 foot-Lamberts after the diffuser, provided to a liquid crystal display, 12.5 and 18 watts of power usage, and luminous efficiencies of 25 and 9 lurnens per watt.

BRTFF DFSCRTPTION OF T~-TF DRAWING
Figure 1 shows a liquid crystal display having a field emitter array backlight.
Figure 2 is a block diagram showing the electronics for sequencing three color field emitter array b~rklight liquid crystal display.
Figure 3 illu~lld~s an individual pixel field emitter lighting scheme.

WO 96/13753 PCTNS95/13329 ~
, = -4-o 2 1 99 282 Figure 4 reveals a three color field emitter pixel lighting pattern.
Figure Sa is an illustration of a three color single pixel field emitter light.
Figure Sb shows a three color field emitter sequencing strip configuration.
Figure Sc reveals a three color field emitter additive strip configuration.
S Figure 6 shows a s-~hem~tic of a pixel with four subpixels used in the fabrication of a multi-domain halftone gray scale display.
Figure 7a is a break-away view of the pixel having subpixels with various sized control capacitors.
Figure 7b is an electrical equivalent circuit of the pixel in Figure 7a.
Figure 8 shows a basic comb-tooth edge field emitter.
Figures 9a and 9b illustrate emitter edges.
Figure 10 shows a perspective of an emitter.
Figures 11 and 12 show views of another kind of emitter.
Figure 13 is a side cutaway view of an emitter.
lS Figure 14 is a cross-section view from figure 6.
Figures 15a-c show three comb structures of an emitter.
Figure 16 reveals an array layout of emht~r~.
Figure 17 is a cross-section of a thin-film-edge emitter.
Figure 18 shows the place of the field emitter in a liquid crystal display.
Figure 19 is a portion of the structure of the field emitter array used as an individual lamp for a liquid crystal pixel.
Figure 20 is a perspective view of a field emitter microstructure.
Figure 21 is a flow chart for fabrication of a field emitter array.
Figure 22 illustrates a l~min~tetl emitter structure.
Figure 23 shows a dual control electrode emitter structure.
Figure 24 shows a single control electrode emitter structure.
Figure 25 reveals a planar thin film edge field emitter, having an individual low voltage phosphor screen on the same substrate as the field emitter.

DFSCF~TPTION OF THF Fl~T~ODIMFNTS
The field edge emitter array is a lamp that functions as a b~cklight 130 for a liquid crystal display l 34 in figure 1, in lieu of the usual fluorescent lamp, in a ~ ^ ~
~ WO 96/13753 PcT~ss~ll3329 5~ 2 1 9 9 2 8 2 monochrome liquid crystal display, or in a color liquid crystal display having color filters. Such application of the field emitter array may be in the active matrix liquid crystal display as well as in the passive display not having the pixel switching thin film transistors.
5- Several field emitter arrays may be used as bPçklight~ to effect a color liquid crystal display not having color filters. For in~t~n~e, in figure 2, three field emitter arrays, as backlight~ 141, 142 and 143, emilting red, green and blue light, respectively, are sequenced in synchronism, by sequencing electronics 136 which receives signals from pixel addressing electronics 138, with the switching of pixels 135 for receiving images by liquid crystal display 134 to result in a full color display. An assortment of applicable sequencing and addressing schemes are in the art. Pixel addressing electronics 138 provides column address signals and row address signals to effect the switching of pixels 135 to display images, from image data source 140. Red b~cklight 141 is on when the image template for red is displayed, green bac~light 142 is on when the image template for green is displayed, and blue b~klight 143 is on when the image template for blue is displayed. The image templates change every one third of a frame.
The frame frequency is 60 hertz per second. Thus, each template is present and each respective b~ckli~ht is on for 1/180 of a second. One sequence ofthe red, green and blue templates results in a full color image.
Figure Sb is a sequen~in~ strip configuratia,n that is similar to that of figure 2.
However, the form of b~ckli~ht~ 141, 142 and 143 is different in that in figure Sb they are in the form of strips that are sequenced like the b~cklight~ of figure 2. Strips 141, 142 and 143 of field emitters emit red, green and blue light, respectively, only one color at time, according to sequence of the templates as described for the system of figure 2.
The strips may be on a substrate parallel and next to liquid crystal panel 134. The strips may be aligned and in the same direction as the columns or the rows of pixels 135 of panel 134, according to design choice. The width of the strips need not be the same size as that of the columns or rows, which ever the strips are aligned with. The width of the strips may be up to two times as wide as the width of the columns or the rows. The light of the field emitter array strip that is "on" is expected to spill over so that the whole of panel 134 is lit up with one color for the duration of the rejl)e~;live template. A
diffuser layer 145 is inserted between the field emit~er array strips and panel 134 to WO96/13753 PCr/US95/1332g ~
=; = -6- 0 2 1 99 ~82 diffuse or spread the light to the other columns or rows for uniform lighting of the whole panel 134 when one color of strip light is being emitted.
A field emitter array additive strip configuration for liquid crystal display 134 is shown in figure 5c. Strips 141, 142 and 143 may be aligned with either the columns or S the rows of pixels 135 of panel 134. The field emitter array strips may be on a substrate that is parallel and next to panel 134. Strips 141, 142 and 143 must have the same width as the columns or rows of pixels 135 because no spill over or crosstalk can be tolerated as in the sequencing strip configuration. A light collim~tinE layer 146 is inserted between the field emitter array strip substrate and panel 134, for collim~ting light ofthe 10 respective strip so that the emitted light goes only to that column or row of pixels 135 with which the strip is ~ nP~l All strips 141, 142 and 143 are connected to power source 148, and emit light for the whole time that liquid crystal display panel 134 is "on". Three pixels 135 of the three colors are additive to produce each color spot in the color display. The pixels 135 control the passage of light through panel 134.
lS Further, the field edge emitter array is an integral part of individual pixel 135 li~hting for color liquid crystal display 134. Instead of color filters, each pixel 135 has at least one field emitter array or b~ckli~ht (red) 141, (green) 142 or (blue) 143 proximate to the pixel as shown in figure 3. Each pixel 135 ~ rent to a side of given pixel has a field emitter array of a rliffering color than the field emitter array of the given pixel. For example, in figure 4, a middle pixel having a red field emitter array is adjacent to two pixels having blue field emitter arrays and to two pixels having green field emitter arrays. For a given color, three pixels of red, green and blue, are turned on at respective proportional amounts to provide the correct mixture of colors of light from the field emitter arrays for the given color. Alternatively, pixel 135 lamps may be sequenced according to color, like the three color b~cklight configuration of figure 2.
Another approach is to have field emitt~r~ of red, green and blue light within the area of each pixel. Each of the field emitter arrays also may be controlled and switched iIl synchronism with the respective pixel for light brightne~ and image control, for added effects.
The field emitter arrays may switch on in combination for providing a particularcolor for a given pixel rather than having three pixels switch on for providing the desired color spot on the display, even though there may be only one field emitter array 2 1 9 9 2 ~ ~
.. . . .....
per pixel as noted above, because the field emitter light can be fabricated with respect to its associated pixel such that the light of that field emitter array spills over to the adjacent pixels.
Another configuration is where there is more than one field emitter array withineach pixel area, as in figure 5a. For example, there can be at least three field emitter arrays per pixel, capable of providing light of three different colors such as red, blue and green, or any other combination of a plurality of colors excluding red, blue andlor green.
Then, for each pixel, the field emitter arrays may be switched accordingly along with the respective pixel to provide the desired or needed pixel color as dictated by the row and column address lines to the pixel and field emitter arrays.
Field emitter array pixel color lightin~ is applicable to monochrome (i.e., having no color filters) gray scale liquid crystal displays. The field emitter arrays may be fabricated separately on a substrate and brought in proximity with a liquid crystal display to obtain a field emitter array color lighted liquid crystal display. On the other hand, the field emitter arrays and the liquid crystal display may be integrally fabricated as one unit, using well-known int~gldted circuit technology.
The liquid crystal display devices that the present field emitter array lamp technology is applicable are active matrix displays as well as passive matrix displays.
The active matrix type displays char~teri~ti~lly have a thin film transistor forswitching on or off each pixel, for reasons of improved p~,.rollllance. However, each pixel may be switched directly without a transistor, as in the passive matrix liquid crystal display.
Figures 6, 7a and 7b, illustrate an exarnple of a pixel 135 for a multi-domain halftone display. Initially, the thin film transistor (TFT) array having halftone subpixels with control c~p~citc rs is fabricated on a ifirst glass substrate 186, which is about 43 mils thick. The control c~pacitl)rs C 1, C2, C3, and C4 for subpixels 162, 163.
164 and 165, respe.;~ ely, are fabricated by varying the overlap area of a first indiurn tin oxide (ITO) electrode 161 (that is connected to the TFT drain 160) with a second ITO
electrode 167 defining subpixels 162, 163, 164 and 165. First and second ITO layers 161 and 167 are about 1000 angstroms thick and are separated by control capacitor dielectric 192, with an option of a via 166 (shown in figure 6) for connecting ITO layer 161 to the Xl subpixel 162 portion of ITO layer 167. This via contact 166 allows the .

Wo 96/13753 PCI/US9S/13329 full data voltage from the TFT to be applied to #1 subpixel 162, rather than depending on the capacitance C1 between ITO layer 161 and the subpixel 162 portion of ITO layer 167 for turning on subpixel 162. Via 166 shorts out control capacitor C1 . Dielectric layer 192 is about 5000 angstroms thick and is made of silicon dioxide.
. 5 The ÇLC, capacitance of equivalent circuit 196 in figure 7b is the capacitance between second ITO layer 167 functioning as individual subpixel electrodes on first substrate 186 and second ITO layer 194 functioning as the common electrode on second glass substrate 188 with liquid crystal material 190 as the dielectric, in figure 7a.
Second glass substrate 188 has a thickness of about 43 mils and common electrode layer 194 has a thickness of about 1000 angstroms. In the case wherein a white field emitter array b~ckli~ht is lltili7~rl, then between second glass substrate 188 and electrode 194 there is a color filter array 169, if structure 184 is for a color display. Here, color filter array 169 is about 2 to 3 microns thick and is composed of polyimide cont~ining red, green and blue dyes. Immediately cont~cting liquid crystal m~tPri~l 190 are first and second polyimide ~lignment layers 195 and 197 which are each about 500 to 1000 angstroms thick. First polyimide ~lignment layer 195 is formed on ITO layer 167 and second polyimide ~liEnment layer 197 is formed on common electrode ITO layer 194.
Between alignment layers 195 and 197, besides liquid crystal material 190, are situated spacers 213 which may be pillars, cylinders or spheres, setting the distance between layers 195 and 197 and ~ul~po~ g a space for liquid crystal m~teri~l 190. First ITO
layer 161, along with TFT 230 is formed on one side of first glass substrate 186. On the other side of first glass substrate 186 is formed a first co~ ells~lion or retardation film or layer 199. Formed on first collll)~llsation layer 199 is first polarizer 201. On second glass substrate 188 is formed a second compensation or .~:~Ld~lion film or layer 203.
Situated on compensation layer 203 is second polarizer 205. On second polarizer 205 is formed an antireflection and/or an electrom~gnetic hlte~r~ ce resistive layer 207.
Backlight 141, 142 and/or 143 is sit. l~tP~ proximate to first polarizer 201 for putting light through display 184 via layers 201, 199, 186, 161, 192, 167, 195, 190, 197, 194, 169, 188, 203, 205 and 207, on to a viewer.
Configurations of liquid crystal displays, including those of grayscale capability, and certain fabrication techniques are disclosed in the following listed United States Patents: (1) patent number 4,840,460, by Anthony Bernot et al., issued June 20, 1989.

-and entitled "App~l~s and Method for Providing a Gray Scale Capability in a Li~uid Crystal Display Unit;" (2) patent number 5,126,865, by Kalluri Sarma, issued June 30, 1992, and entitled "Liquid Crystal Display with Sub-Pixels;" (3) patent number 5.162,931, by Scott Holmberg, issued November 10, 1992, and entitled "Method of S Manufacturing Flat Panel Backplanes including Red-ln-1~nt Gate Lines and Displays Made thereby;" (4) patent number 5,191,452, by Kalluri Sarma, issued March 2, 1993, and entitled "Active Matrix Liquid Crystal Display Fabrication for Grayscale;" (5) patent number 5,204,659, by Kalluri Sarma, issued Apnl 20, 1993, and entitled "Apparatus and Method for providing a Gray Scale in Liquid Crystal Flat Panel Displays;" (6) patent number 5,258,323, by Kalluri Sarma et al., issued November 2, 1993, and entitled "Single Cr.,vstal Silicon on Quartz;" (7) patent number 5,344,524, by Kalluri Sharma [sic] et al., issued September 6, 1 ~94, and entitled "SOI Substrate Fabrication;" and (8) patent number 5,281,840, by Kalluri Sarma, issued January 25, 1994, and entitled "High Mobility Tntegr~tt?d Drivers for Active Matrix Displays;"
15 which are hereby incol~o~ d by reference in this present description. The above-noted patents in this paragraph are assigned to the same assignee of the invention described in this present description Figure 8 shows a basic comb-tooth edge field emitter 20 usable in the field emitter array lamp for li~uid crystal displays. Emitter 20 has a lead-in conductor 1, is in 20 electrical connection with an outside voltage source, and is in contact with an emitter structure 3, through a resistive element 5, and a conductive element 6 at electrical contact 2. Lead-in conductor 1 preferably physically contacts only resistive element 5.
Emitter edge 4 of emitter structure 3 is segmented into a plurality of comb-likeelements el ... en. The segment~tiQn of the emitter edge serves to isolate burn-out 25 problems. Locali7ing the edge length will prevent spreading of the burn-out and confine the problem to its origin~ting comb element.
A resistive film 5, typically but not limited to tantalum nitride or a polysilicon, is formed through thin film construction techniques to be in contact with emitter structure 3 so that the resistance applied is in series with emilter edge 4. The resistive film serves 30 to limit excessive direct current (D.C.) emission ~ ellls to the emitter edge from sharp points or uncontrollable discharges from stray capacitance.

. ~ o- o 2 1 9 9 2 8 2 A conductive film 6 and an insulator 11, which may be an oxide or nitride, is also obtained through thin film techniques layered above resistive film S such that the elements are in parallel with each other. Together, resistive film 5, in~ tor 11, and conductive film 6 serve as a capacitor which provides a high frequency bypass for S altern~ting current (A.C.) through lead-in conductor 1. The ca~acilor enables amplification of high frequency microwave signals as if the current limiting load line were due to a very small resistor, thus greatly increasing the gain of the amplifier. This is so because the D.C. current is limited in its ability to damage the emitter by the resistor; and because the bypass capacitor provides another way for the high frequency signal to pass the emitter.
Figures 9a and 9b illustrate two emitter edges 61 and 62, respectively, with arrows suggesting electron flow at the edge of each. The ridged edge 62 type is presently prefe.l~id because the corners of edge 61 are likely to cause concentration of electron emission and begin failure.
Figure 10 shows a pel~e~ e view of the emitter illustrated in figure 8. The structure shown at item 7 serves as a support layer. Also visible in this view is in~ tin~ substrate layer 12, and upper and lower control electrodes 8 and 9. A control electrode acts as a lateral gate which controls the current flow between anode 10 and electron-emitting cathode 4.
Figures 11 and 12 show plan and perspective views, respectively, of a second kind of emitter. In this configuration, the entire emitter structure is segmentt cl into comb-like elements 4. Each comb-like element el ... en has an individual resistor element S connecting it to conductor contact 2.
The arrangement of the second configuration enables a larger total current to be25 drawn without burning out the individual comb elements. The first configuration shown in figures 8 and 10, enables a lesser amount of total current to be drawn than the second configuration (assuming the two were of the same size), but has a more effectivecapacitive coupling because of the larger area of the resistive film.
Figure 13 shows a side cutaway view which could represent either one of the 30 two configurations of the emitter. Also shown in figure 13 is dielectric material I l, between conductive element 6 and resistive element 5, as well as insulating substrate 12 upon which the emitter is constructed.

-WO g6113753 PCT/US9~/13329 Figure 14 is a detailed side view taken at line 7-7 of figure 13. From the top, there is a support layer 15 (preferably nitride, though other well known support layers with similar electrical characteristics could be usedj. Upper control electrode 8 (preferably TiW, around 2500 angstroms, though other metals or conductive materials could be used), an upper sacrificed layer 16 (preferably SiO2; about 3000 angstroms, although other ~u~o~ g m~te1~ of similar electrical qualities could be substituted);
the emitter surrounded by two support layers, i.e., the support layers are nitride 11 a and 1 lb of about 2000 angstroms in thickness and the emitter e, a 300 angstrom layer of TiW, although substitute m~tPri~l~ may be used as in the similar above layers). Below this, is another "lower" sacrifice layer 17, similar in makeup and thickness to upper sacrifice layer 16 and lower electrode 9, about 1000 angstroms of TiW. The wholestructure is supported by another support layer 11 (of about 1000 angstroms) and laid down upon SiO2 wafer 12. Substitutes such as crystalline silicon can be used.
Figures 15a, 15b and 15c illustrate three ~ltern~t-ves for comb structure 4 combined with resistor elements 2. Figure 1 Sd is a side cross-section view of element e of the configuration shown in figure 15b.
Figure 16 shows a piece 40 of an array employing ellliLl.,.s 41, 42, 43, and 44,and resistor elements 2a, 2b and 2c. Control electrode wires 50, 52 and 54 ~metalization or other current carrying structures) and lines 63 and 65 are conn.octe(l at junctions 51 and 53, respectively, to turn on emitter 41. Such malrix of address lines 50, 52, 54, 63 and 65 may parallel the address switching matrix for the liquid crystal pixels of a display.
Figure 17 is a diagram that reveals further details of a thin-film-edge emitter 70 that is used as a lamp in a flat panel liquid crystal display. On a substrate 71 is a nitride layer 72 of abou~ 2500 angstroms. Formed on layer 72 is a gate electrode 73 which is of about 1000 angstroms thick of TiW. Formed on layer 72 is a 3500 angstrom layer 74 of oxide. Found on oxide layer 74 is a 1500 angstrom layer 75 of nitride which is used to support 200 to 300 angstroms of TiW as emitter edge layer 76. A 1500 angstrom nitride layer 77 is formed on emitter edge layer 76. Nitride layers 75 and 77 provide structural support for emitter layer 76. Formed on layer 77 is a 3500 angstrom layer 79 of silicon dioxide. Gate electrode 80 of about 2500 angstroms of TiW is formed on a portion of WO 96/13753 PCTrUS95/13329 ~
~ ` r~ 12~ 2 1 9 9 2 8 2 oxide layer 79. A 2500 angstrom layer 81 is forrned on gate electrode 80 and oxide layer 79.
The edges of gate electrodes 73 and 80, and nitride layers 72,75,77 and 81 are approximately aligned with the emitting edge of emitter edge layer 76. A via is etched in layers 77,79 and 81 for forming emitter control via resistive metal, which effectively is a resistor connected in series with emitter edge 76. Metal 78 iS TaN. Oxide la!~ers 74 and 79 are etched back about 0.5 micron from the emitting edge of emitter edge layer 76. Also formed on substrate 71 iS nitride layer 82 of about 2500 angstroms that is apart from the emitter edge wafer 70. Formed on layer 82 is anode 83 having about 0.5 micron layer of TiW. The metal of items 73,76,80 and 83 may be other than TiW but needs to have a similar work function so as to prevent electrochemical reactions that would occur between such items composed of dirr~ellt metals. Anode 83 functions as a focusing electrode for the electrons emitted from emitter edge 76. Anode 83 iS
adjustable in distance about 1.5 to 4 microns from edge 76, to effect optimum focusing.
Emitters 70 may be formed as a comb tooth emitter having a plurality of teeth asassemblies 20 and 21 shown in figures 10 and 12, re~e~ ely. The number of teeth of the emitter is not critical but a plcr~l.ed number for a lamp may be four as field emitter 84 of figure 18 has. Each emitter tooth has a width 85 of about 4 microns wide. Emitter 84 has dimension 87 of about 30 microns, and is one of the emitters that compose lamp 88 which has a ~limen~ion 89 of 100 to 300 microns on each side. A two ~limen~ional array of pixel lamps 88 compose a matrixed addressable lamp array 90, which parallels a pixel array of a liquid crystal display having a ~limen~ion 91 determined by resolution and pixel size. The numbers of emitters 84 in an array 88 and of arrays 88 in matrix 90 are a matter of the design of the liquid crystal display.
Figure 19 shows a portion of the structure of array 100, having field emitters 84 situated on substrate 71. Column address conducting strip 92 and row address conducting strip 93 select the particular emitter array 88 to be turned on to emit electrons which go to an out-of-plane screen 97. Strip 92 is connected to the gate of field emitter 84 and strip 93 is connected to the resistor/emitter of field emitter 84.
Screen 94 is composed of a glass plate or substrate 95. A phosphor layer 96 is formed on glass plate or substrate 95 and a thin alnminllrn (Al) layer 97, ~ J~elll to beams 98 of electrons but conductive of electric signals~ is formed on phosphor layer 96.

WO 96/13753 Pcr/usss/1332s ~ -13-0~219 9 28~
Layer 97 is conn~cte~l to a positive t~?rmin~l of a voltage source that has the other negative termin~l connected to the respective emitters 84. Electron emissions 98impinge phosphor layer 96 as they go through anode 97. As phosphor layer 96 is impinged by emitted electrons 98, layer 96 emits photons in the area which is impinged by emissions or electrons 98, resllltin~ in a visible ;n~ tion of light to an observer.
The above noted screen configuration is primarily used for high voltage phosphors. In an alternative configuration primarily used for low voltage phosphors, layer 96 may be an indium tin oxide (ITO) film, which is conductive of electric signals but transparent to light, formed on glass plate or substrate 95; and layer 97 may be phosphor formed on layer 96 which is connected to a positive t~rmin~l of a voltage source that has the other negative te~nin~l connected to the le~l,e~;liv~ e~,liLlt;l~ 84. Film or layer 96 is the anode for collecting electron emissions 98 of emitters 84. Electron emissions 98 impinge phosphor layer 97 as they go to anode 96. As phosphor layer 97 is impinged by emitted electrons 98, layer 97 emits photons in the area which is impinged by emissions or electrons 98, res~lltin~ in a visible indication of light to an observer. Screen 94 is supported parallel to ~llbsl~dle 71 by dielectric spacer 99 at a rli~t~nre of between 200 and 10,000 microns between screen 94 and substrate 71.
In figure 20 is a configuration of a vacuum microelectronic field emitter microstructure 101 that may be used in arrays for radio frequency (RF) amplification. A
thin-film-edge emitter 102 is sandwiched between control electrodes 103 and 104.Electrons are Pmitt~-l laterally from emitter 102 and are collected at anode 105 a few microns away from emitter 102. Structure 101 is fabricated with a process which combines silicon integrated circuit (IC) p~l te. . ~ing techniques with surface microm~hinin~, as is outlined as a simplified process in figure 21.
Field emitter structure 84 of array 100 in figure 19 is similar to structure 101 in figure 20. However, anode 105 of structure 101 would be a focusing electrode. Emitter edge 102 of structure 101 is split into comb elements 106 and each emitter comb element or finger 106 is connected individually to a current equalization resistive layer or element 107. Resistive element 107 prevents electromigration and burnout of emitting edge 102 by limiting the D.C. current in each finger 106. Thin-film edge emitter structure 102 having comb resistors 107 for fingers 106, permits individual bias for each emitter thereby preventing a few shorts from pulling the line voltage down.

WO 96/13753 PCT/US95/13329 ~

Lateral series resistor 107 is not sensitive to slight fabrication process variations. Thin-film-edge emitter 102 has low intrinsic c~p~cit~nce. Series resistor 107 of fingers can be bypassed at the a~ropliate frequencies by a bypass capacitor 108 to allow fast emitter 101 response times.
Emitter edge 102 fingers 106 need to be thin (i.e., <200 angstroms) to attain the high electric fields for low-voltage emission. The ideal emitter structure is a tapered lateral emitter having a very thin emitting edge, which is difficult to achieve in a thin-film-edge emitter form. Figure 22 shows a compromise l~min~tt rl emitter structure 109 that combines the advantages of the thin-film-edge sharpness with the current carrying capability of a thick film. The opeldlhlg gate voltage is kept reasonably low by using a low workfunction emitter composed of LaB6, CeB6, C5-implanted Wl or Cs-implantedTiW.
Several field emitter structures, based on the thin-film-edge emitter, are suitable for lamps. One is a dual control electrode structure 110 in Figure 23, which resembles a vacuum tr~n~i~tor used for RF amplification. Emitter 112 is symmetrically placedbetween an upper control electrode 113 above emitter 112 and a lower control electrode 114 .~itnz~tecl on ~lbs~ 118 below emitter 112. Electrodes 113 and 114 are electron emission 116 intensity controlling gates. Electrodes 113 and 114 are each spaced at 0.5 microns apart from emitter 112. The anode of a vacuum transistor is used as a focusing electrode 115, !~ihlZIteCl on substrate 118, which is biased between a minus 20 and minus 50 volts, typically at a minus 35 volts, with respect to emitter 112. Electrode 115 is about 4 microns from emitter 112. Emitter 112 is set at zero volts and control electrodes 113 and 114 are set at about a plus 100 volts. The negative bias on electrode 115 turn electrons 116 form a lateral direction to a vertical direction toward screen 117. Screen 117 has a glass plate 119 with an ITO layer 120 formed on it. ITO layer 120 is connected as an anode or collector for electrons 116. Formed on ITO layer 120 is a layer of phosphor 121. Phosphor layer 121 is about 2~500 microns in distance from parallel substrate 118. Collector 120 is biased at a positive 20,000 volts (i.e., at a field of 8 volts per micron). The electron energy spread of emission 116 is about 0.1 electron volt (eV) and the emission angle is + 45 degrees.
Another lamp field emitter structure is the single control electrode configuration 122 shown in figure 24. Configuration 122 has the same items~ physical dimensions~

~ WO96/13753 ~ 9 28~crrusg5/l3329 voltage requirements, and operational characterislics as configuration 110 of figure 23.
The only distinction is that there is no lower elec~rode or gate 114 in configuration 122.
The position and height of focus electrode 1 15 has an effect on the collimation of electrons 116. The best position for electrode 115 is below emitter 112 for configuration 110 and is at the sarne level æ upper control gate 113 for configuration 122. The electrons seem to be better collim~ted in configuration 122. Both configurations 110 and 122 are little susceptible to emitter 112 erosion by energetic particles desorbed by electron 1 16 bombardment of phosphor screen 121.
Phosphor layer 121 acts as the anode and may be deposited on the glass. This may be followed by a thin layer 120 of Al which is a con~luctin~ layer and also acts as a reflector. In operation, the emitted electrons trave] to anode 121, c~l~sin~ luminous emission when they impinge on phosphor screen 121. High-voltage phosphors are much better than low-voltage phosphors because the brightn.?~s is propol lional to the accelerating voltage and the current density, and phosphor lifetime is inverselyplo~ ional to the deposited charge density. The following table conlpal~es the characteristics of low- and high-voltage cathodolnnnin~scent phosphors.

Low Voltage High Voltage 200 V, 100 ,uA/cm2 16 KV, 4 ~A/cm2 Color Material Efficiency Material Efficiency (lm/W) (lm/W) Red Zno.2Cdo.gS:Ag, Cl 1.3 Y2O3 EU 18 Green ZnO.62cdO.38S:Ag~ 4 5 Gd2O2S:Tb 33.0 Cl Blue ZnS:Ag, Al 0.6 ZnS:Ag 3.0 Bri~htn~ss x accelerating voltage Brightness current density Life l/deposited charge In figure 19, the phosphor screen is part of individual edge emitter array 84.
Array 100 may emit one of several colors, depending on the kind of phosphor 97 that screen 94 has. The above table gives examples of materials used for att~qining red. green WO 96/13753 , PCT/US95/13329 160 a 1 99 282 and blue light emitting phosphors. Pixel 88 of an array of field ellliLI~ 84, along with a phosphor screen 94 like that of figure 19, may be cle~igned to emit red, green or blue light, even light of another color with the ~plop~;ate phosphor. Thus, red, green and blue pixels can be placed in matrixed addressable pixel array 90, for obtaining a full color field emitter lighted liquid crystal display. The pixel layout, for instance, may be that each pixel of a given color is bordered by pixels of the other colors. Examples of color pixel formats, for three and four color matrix arrays, are set forth in the related art, such as a United States patent, number 4,800,375, by Louis Silverstein et al., issued January 24, 1989, and entitled "Four Color Repetitive Sequence Matrix Array for Flat Panel Displays," which is hereby incorporated by reference in this description.
For lifetime considerations, high-voltage phosphors are better than low voltage phosphors. An issue that needs to be addressed is the breakdown of dielectric spacers due to the high anode voltages. However, dielectric breakdown should not be an issue since at 20,000 volts, the electric field of dielectric spacers 99 (in figure 19) is below 105 V/cm.
A third lamp field emitter structure is an on-chip phosphor screen configuration124 in figure 25. Configuration 124 is a derivative of configuration 110. A trench 125, between 1.0 to 2.5 microns deep, is etched (with microm~hining) in substrate 118 in the area of former focusing electrode 115. An anode 123 is deposited in trench 125.
After the anode 123 deposition, a phosphor layer 127 is defined by e-beam evaporation and lift-off. Electrons 126 go from emitter 112 towards phosphor screen 127 and anode 123, to emit photons for viewing. Laterally, anode 123 is between 2 to 10 microns from the nearest edge of emitter 112. The anode 123 voltage is equal to or greater than positive 500 volts relative to emitter 112 which is at a zero voltage. Upper control gate 113 and lower control gate 114 are at 100 volts and situated similarly relative to emitter 112 as in configuration 110 of figure 23.

Claims

THE CLAIMS

1. A flat panel display comprising:

a plurality of liquid crystal pixels (135) situated in a first plane; and a plurality of field emitter arrays (141, 142 and 143) situated in a second plane, said second plane being approximately parallel and proximate to said first plane;
characterized in that at least one field emitter array of said plurality of field emitter arrays being positioned at each liquid crystal pixel of said plurality of liquid crystal pixels, such that the at least one field emitter array functions as a substantially continuous backlight for each liquid crystal pixel.

2. The flat panel display of claim 1 further comprising:
a first plurality of address lines (row address) connected to said plurality of liquid crystal pixels; and a second plurality of address lines (column address) connected to said plurality of field emitter arrays; and wherein:
the at least one field emitter array that functions as a substantially continuous backlight for each liquid crystal pixel is capable of emitting light of a color from a group consisting of at least three different colors, in accordance with a signal from one address line of said second plurality of address lines;
each liquid crystal pixel is capable of passing a spot of color from a proximate field emitter array, providing a particular intensity to an observer, in accordance with a signal form an address line of said first plurality of address lines; and said plurality of liquid crystal pixels are capable of providing a full color display in the first plane.

3. The flat panel display of claim 1 wherein:
said plurality of liquid crystal pixel and plurality of field emitter arrays are arranged such that each pixel, having sides, capable of providing a certain color, is bordered by pixels, along the sides, capable of providing a color different from the certain color; and each pixel of said plurality of liquid crystal pixels is a gray scale pixel capable of providing the color at a variable intensity.

4. The display of claim 1 wherein each field emitter of said plurality of field emitter arrays comprises:
a cathode for emitting electrons;
an anode for receiving electrons;
a phosphor screen, situated at said anode such that electrons emitted from said cathode impinge said phosphor screen such that said phosphor screen emits photons of a certain color determined by the type of phosphor on said phosphor screen; and a control electrode for controlling an intensity of electrons emitted from said cathode.

5. A flat display of claim 1, wherein each liquid crystal pixel of said plurality of liquid crystal pixels comprises a plurality of subpixels (e.g. 162,163,164 and 165) which provide a variable grayscale output according to a signal applied to said liquid crystal pixel, from no subpixel being activated to all of the plurality of subpixels being activated according to a magnitude indication of the signal.

6. The display of claim 1 wherein said field emitter array comprises at least one field emitter.

7. The display of claim 6 wherein the at least one field emitter is a thin film edge field emitter.

8. The display of claim 7 wherein the thin film edge emitter comprises;
a cathode for emitting electrons;
a resistor element, connected to the cathode for limiting electrical current to the cathode;
an anode for attracting electrons emitted by the cathode; and a phosphor screen proximate to the anode for being impinged by electrons attracted by the anode and for emitting light caused by impinging electrons.

9. The display of claim 8 wherein the cathode has a comb-shaped structure.

10. The display of claim 9 wherein the color of light emitted by the phosphor screen is determined by the type of phosphor on the phosphor screen.

11. The display of claim 7 wherein the thin film edge field emitter comprises a control electrode for controlling the intensity and/or direction of electrons emitted by the cathode.

12. The display of claim 11 wherein the thin film edge field emitter comprises a focusing electrode for focusing the electrons emitted by the cathode on the anode.

13. The of claim 12 wherein the thin film edge field emitter comprises a second control electrode for further controlling the intensity and/or direction of electrons emitted by the cathode.

14. The display of claim 13 wherein the thin film edge field emitter further comprises a capacity element connected in parallel with the resistive element, for conducting varying amplitude electrical current signals to the cathode.