CA2215369A1 - Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein - Google Patents

Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein

Info

Publication number
CA2215369A1
CA2215369A1 CA002215369A CA2215369A CA2215369A1 CA 2215369 A1 CA2215369 A1 CA 2215369A1 CA 002215369 A CA002215369 A CA 002215369A CA 2215369 A CA2215369 A CA 2215369A CA 2215369 A1 CA2215369 A1 CA 2215369A1
Authority
CA
Canada
Prior art keywords
gate
dosimeter
floating gate
transistors
charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002215369A
Other languages
French (fr)
Other versions
CA2215369C (en
Inventor
Nicholas Garry Tarr
Ian Thomson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carleton University
Best Medical Canada Ltd
Original Assignee
Thomson and Nielsen Electronics Ltd
Carleton University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson and Nielsen Electronics Ltd, Carleton University filed Critical Thomson and Nielsen Electronics Ltd
Priority to CA002215369A priority Critical patent/CA2215369C/en
Priority to US09/138,394 priority patent/US6172368B1/en
Publication of CA2215369A1 publication Critical patent/CA2215369A1/en
Application granted granted Critical
Publication of CA2215369C publication Critical patent/CA2215369C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/02—Dosimeters
    • G01T1/026—Semiconductor dose-rate meters

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

An insulated gate field effect transistor dosimeter has a source and drain defining a channel region, a floating gate having a first portion extending over the channel region, and a second, larger portion extending away from said region, a control gate having at least a portion thereof overlapping a first part of the floating gate, and a charging gate overlapping a second part of the floating gate. The area of the second part of the floating gate is much smaller than the area of the first part, and the charging gate is separated from the channel region by the control gate. The dosimeter is charged, before irradiation, by connecting the source, drain and control gate to a common ground and applying a potential difference between the charging gate and the common ground. The charge is supplied to the floating gate by a path which does not require a significant electric stress to be created in the region of the gate oxide and the channel. The dosimeter may comprise two such transistors fabricated on a common substrate, conveniently with a common source. The pair of transistors may be charged by maintaining the sources, drains and control gates within the normal maximum operating voltage relative to each other, and applying different potential differences between the two charging gates, respectively, and the substrate. Following irradiation, the absorbed radiation dose is determined by measuring the difference between the threshold voltages of the two transistors. Preferably, the transistors have charges of opposite polarities. This differential arrangement reduces the effects of temperature variations and enhances sensitivity.
CA002215369A 1997-09-12 1997-09-12 Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein Expired - Fee Related CA2215369C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CA002215369A CA2215369C (en) 1997-09-12 1997-09-12 Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein
US09/138,394 US6172368B1 (en) 1997-09-12 1998-08-24 Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA002215369A CA2215369C (en) 1997-09-12 1997-09-12 Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein

Publications (2)

Publication Number Publication Date
CA2215369A1 true CA2215369A1 (en) 1999-03-12
CA2215369C CA2215369C (en) 2008-11-18

Family

ID=4161463

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002215369A Expired - Fee Related CA2215369C (en) 1997-09-12 1997-09-12 Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein

Country Status (2)

Country Link
US (1) US6172368B1 (en)
CA (1) CA2215369C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021056096A1 (en) * 2019-09-26 2021-04-01 Best Medical Canada Ltd. Low power dual-sensitivity fg-mosfet sensor for a wireless radiation dosimeter
CN114035011A (en) * 2021-09-28 2022-02-11 无锡芯鉴半导体技术有限公司 High-power device grid charge extraction test method
US11741329B2 (en) 2019-09-26 2023-08-29 Best Theratronics, Ltd. Low power non-volatile non-charge-based variable supply RFID tag memory

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6402689B1 (en) * 1998-09-30 2002-06-11 Sicel Technologies, Inc. Methods, systems, and associated implantable devices for dynamic monitoring of physiological and biological properties of tumors
FR2805889B1 (en) * 2000-03-03 2002-05-31 Centre Nat Rech Scient AMPLIFIER DEVICE FOR SENSORS AND MEASUREMENT SYSTEM OF A PHYSICAL QUANTITY PROVIDED WITH SUCH A DEVICE
WO2002039112A2 (en) * 2000-11-09 2002-05-16 Sicel Technologies, Inc. In vivo detection of biomolecule concentrations using fluorescent tags
US7011814B2 (en) * 2001-04-23 2006-03-14 Sicel Technologies, Inc. Systems, methods and devices for in vivo monitoring of a localized response via a radiolabeled analyte in a subject
US7557353B2 (en) * 2001-11-30 2009-07-07 Sicel Technologies, Inc. Single-use external dosimeters for use in radiation therapies
US7062476B2 (en) * 2002-06-17 2006-06-13 The Boeing Company Student neural network
EP1594551A2 (en) * 2003-02-19 2005-11-16 Sicel Technologies, Inc. In vivo fluorescence sensors, systems, and related methods operating in conjunction with fluorescent analytes
US20050164047A1 (en) * 2003-12-19 2005-07-28 Adolph Mondry Voltage dosimeter-system and method for supplying variable voltage to an electric circuit
US7525431B2 (en) * 2004-05-06 2009-04-28 Ut-Battelle Llc Space charge dosimeters for extremely low power measurements of radiation in shipping containers
US20060027756A1 (en) * 2004-08-09 2006-02-09 Ian Thomson Dosimeter having an array of sensors for measuring ionizing radiation, and dosimetry system and method using such a dosimeter
US20080121980A1 (en) * 2006-06-21 2008-05-29 Macronix International Co., Ltd. Bottom Dielectric Structures and High-K Memory Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window
US7512013B2 (en) * 2006-06-21 2009-03-31 Macronix International Co., Ltd Memory structures for expanding a second bit operation window
US7599229B2 (en) * 2006-06-21 2009-10-06 Macronix International Co., Ltd. Methods and structures for expanding a memory operation window and reducing a second bit effect
US20070296023A1 (en) * 2006-06-21 2007-12-27 Macronix International Co., Ltd. Charge Monitoring Devices and Methods for Semiconductor Manufacturing
US20070297244A1 (en) * 2006-06-21 2007-12-27 Macronix International Co., Ltd. Top Dielectric Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window
US7471568B2 (en) * 2006-06-21 2008-12-30 Macronix International Co., Ltd. Multi-level cell memory structures with enlarged second bit operation window
US7684252B2 (en) * 2006-06-21 2010-03-23 Macronix International Co., Ltd. Method and structure for operating memory devices on fringes of control gate
US7669883B2 (en) * 2007-03-29 2010-03-02 Newfrey Llc Air bag bracket/fastener
US8519345B2 (en) * 2008-10-16 2013-08-27 King Abdullah University of Science and Technology (KAUST) Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system
US8791418B2 (en) * 2008-12-08 2014-07-29 Micron Technology, Inc. Increasing the spatial resolution of dosimetry sensors
US8294111B2 (en) * 2009-08-14 2012-10-23 The Boeing Company Dosimeter and associated method of measuring radiation
US8198595B2 (en) * 2010-04-22 2012-06-12 Fr. Oleg Uryupin Personal dosimeter on the base of radiation integrated circuit
US9063235B2 (en) 2012-06-01 2015-06-23 Landauer, Inc. Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry
WO2013179273A1 (en) 2012-06-01 2013-12-05 Landauer, Inc. Wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry
US8803089B2 (en) 2012-06-01 2014-08-12 Landauer, Inc. System and method for wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry
US9057786B2 (en) 2012-06-01 2015-06-16 Landauer, Inc. Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry
CN102832203B (en) * 2012-08-29 2014-10-08 北京大学 Structure and method for testing trap density of gate oxide interface
JP6072943B2 (en) 2013-05-31 2017-02-01 ランダウアー インコーポレイテッド Integrated wireless motion and position sensitive radiation sensor for occupational and environmental dosimetry
US9600208B2 (en) 2014-11-21 2017-03-21 Palo Alto Research Center Incorporated Passive detector with nonvolatile memory storage
US10211302B2 (en) 2017-06-28 2019-02-19 International Business Machines Corporation Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts
US10012739B1 (en) * 2017-08-30 2018-07-03 Rotem Ind. Ltd. Radiation dosimeter and method of operation
US10303998B2 (en) * 2017-09-28 2019-05-28 International Business Machines Corporation Floating gate for neural network inference
US10782420B2 (en) 2017-12-18 2020-09-22 Thermo Eberline Llc Range-extended dosimeter
US11131782B2 (en) * 2018-11-12 2021-09-28 Stmicroelectronics (Crolles 2) Sas Ionizing radiation detector
US11353597B2 (en) * 2020-04-29 2022-06-07 Tower Semiconductor Ltd. High resolution radiation sensor based on single polysilicon floating gate array

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3413829A1 (en) 1984-04-10 1985-10-17 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin MOS DOSIMETER
CA1204885A (en) 1985-09-18 1986-05-20 Thomson & Nielson Electronics Ltd. Dosimeter
US5117113A (en) 1990-07-06 1992-05-26 Thompson And Nielson Electronics Ltd. Direct reading dosimeter
US5444254A (en) 1992-06-12 1995-08-22 Thomson And Nielsen Electronics Ltd. Flexible radiation probe
FI934784A0 (en) 1993-10-28 1993-10-28 Rados Technology Oy STRAOLNINGSDETEKTOR
US5596199A (en) 1995-02-06 1997-01-21 Clemson University Passive solid state microdosimeter with electronic readout

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021056096A1 (en) * 2019-09-26 2021-04-01 Best Medical Canada Ltd. Low power dual-sensitivity fg-mosfet sensor for a wireless radiation dosimeter
US11604290B2 (en) 2019-09-26 2023-03-14 Best Theratronics, Ltd. Low power dual-sensitivity FG-MOSFET sensor for a wireless radiation dosimeter
US11741329B2 (en) 2019-09-26 2023-08-29 Best Theratronics, Ltd. Low power non-volatile non-charge-based variable supply RFID tag memory
EP4049064A4 (en) * 2019-09-26 2024-02-21 Best Theratronics Ltd Low power dual-sensitivity fg-mosfet sensor for a wireless radiation dosimeter
CN114035011A (en) * 2021-09-28 2022-02-11 无锡芯鉴半导体技术有限公司 High-power device grid charge extraction test method

Also Published As

Publication number Publication date
US6172368B1 (en) 2001-01-09
CA2215369C (en) 2008-11-18

Similar Documents

Publication Publication Date Title
CA2215369A1 (en) Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein
CA1095171A (en) Dual injector, floating gate mos electrically alterable, non-volatile semiconductor memory device
KR960043250A (en) Semiconductor device
EP0778623A3 (en) PMOS memory cell with hot electron injection programming and tunnelling erasing
WO1996021273A3 (en) Two-transistor zero-power electrically-alterable non-volatile latch
EP0108650A3 (en) Programmable mos transistor
EP0219241A3 (en) Non-volatile semiconductor memory
US5019881A (en) Nonvolatile semiconductor memory component
EP0377959A3 (en) A method of driving a charge detection circuit
US5357137A (en) Semiconductor device
GB1517927A (en) N-channel field storage transistors
Brady et al. Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications
US7436701B2 (en) Single poly EPROM device with double control gates to prevent unintentionally charging/discharging
JP2806552B2 (en) Semiconductor nonvolatile storage device
JPH01212472A (en) Nonvolatile semiconductor storage device
US5930171A (en) Constant-current source with an EEPROM cell
JPS5671313A (en) Monolithic reference current source
Hamamoto et al. Asymmetry of the substrate current characteristics enhanced by the gate bird's beak
JPS5758358A (en) Charge transfer device
GB1517925A (en) Storage field effect transistors
JPS55111173A (en) Semiconductor memory device
JPS61127175A (en) Mos semiconductor device
JPH0451072B2 (en)
JPS55134978A (en) Semiconductor memory
JPS5720475A (en) Negative resistance element

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed

Effective date: 20130912