CA2242670A1 - Field modulated vertical cavity surface-emitting laser with internal optical pumping - Google Patents
Field modulated vertical cavity surface-emitting laser with internal optical pumping Download PDFInfo
- Publication number
- CA2242670A1 CA2242670A1 CA002242670A CA2242670A CA2242670A1 CA 2242670 A1 CA2242670 A1 CA 2242670A1 CA 002242670 A CA002242670 A CA 002242670A CA 2242670 A CA2242670 A CA 2242670A CA 2242670 A1 CA2242670 A1 CA 2242670A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- laser cavity
- mirror
- cavity
- vcsel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Abstract
A vertical cavity surface emitting laser diode (VCSEL), includes top and bottom electrically non-conductive mirrors defining a first laser cavity containing a laser medium and designed to resonate at a first wavelength. A second laser cavity is designed to resonate at a second wavelength less than the first wavelength.
The second laser cavity is optically coupled to the first laser cavity so as to pump the laser medium and create laser action in the first laser cavity. The second laser cavity is normally provided by a VCSEL stacked below the first laser cavity.
The second laser cavity is optically coupled to the first laser cavity so as to pump the laser medium and create laser action in the first laser cavity. The second laser cavity is normally provided by a VCSEL stacked below the first laser cavity.
Description
FIELD MODULATED VERTICAL CAVITY SURFACE-EMITTING LASER WITH
INTERNAL OPTICAL PUMPING
This invention relates to the field of laser diodes, and more particularly to a field modulated vertical cavity surface-emitting laser with an internal optical pumping.
VCSELs or vertical cavity surface-emitting laser diodes are known in the art. While 850 nm current modulated VCSEL laser diodes are commercially available, it is hard to realize a 1300 nm VCSEL due to technical difficulties. In a VCSEL, the optical cavity needs to be defined by mirrors having high reflectivity and low loss to create laser action at room temperature. In addition, the mirrors need to be electrically conductive in order to allow current injection.
Up to the present time, it has not been possible to grow mirrors of the desired quality on substrates made of indium phosphide, emitting at 1300 nm.
It has been demonstrated that it is possible to fuse mirrors made of aluminum gallium arsenide and its alloys onto an active layer of if indium gallium arsenide phosphide, emitting at 1300 nm. However, this procedure is complicated. The active layer is only about 100 nm thick and it needs to be separated from the substrate on which it was grown and transported to a substrate containing the first mirror, then the stack consisting of the active layer and the first mirror again need to be transported to a substrate containing the second mirror. Obviously, no significant yield can be expected using this method. Also, three wafers are consumed for each functional device fabricated.
It has been proposed that one of the mirrors be replaced by a dielectric mirror using silicon and low refractive index materials such as oxides, nitrides or even an airgap. The problem is that the mirror is then no longer conductive so that carrier injection pumping is not possible.
An object of the invention is to overcome this problem.
According to the present invention there is provided a laser diode structure, comprising top and boKom mirrors defining a first laser cavity containing a laser medium and designed to resonate at a flrst wavelength, at least one of said mirrors being electrically non-conductive; and a second laser cavity designed to resonate at a second wavelength less than said first wavelength, said second laser cavity being optically coupled to said first laser cavity so as to optically pump said laser medium and create laser action in said first laser cavity.
The laser diode is preferably a VCSEL, (vertical cavity surface emitting laser) diode.
The problems of the prior art are overcome by optically pumping the VCSEL operating at the longer wavelength with a VCSEL operating at a shorter wavelength that can be pumped by other means, such as carrier injection. The optical pumping is preferably carried out with the aid of a second VCSEL, which since it operates at a shorter wavelength can be fabricated on the same substrate in a conventional manner using conductive mirrors and carrier injection pumping.
Typically, the main VCSEL operates at 1300 nm and the VCSEL that provides the optical pumping operates at 980 nm.
The invention will now be described in more detail, by way of example only, with reference to the accompanying drawings, in which the single figure is a cross section through a VCSEL in accordance with the invention.
In the figure, the 1300 nm VCSEL made in accordance with the principle of the invention comprises a conventional 980 nm VCSEL 1 acting as an optical pump and having a bottom mirror 2 of a GaAs/AlGaAs quarte~avelength stack for 1300nm reflection, an active medium 3 of InGaAs quantum wells confined between GaAs layers or an AlGaAs alloy, and a top mirror 4 of a GaAs/AlGaAs quarterwavelength stack. A backside contact 5 is formed on the backside of the VCSEL 1 and isolation layers 6 are provided in a conventional manner.
An intermediate GaAs buffer layer 7 is deposited on the top mirror 4. The bottom mirror 8 of the main VCSEL 9 is grown on the buffer layer 7. The bottom mirror 8 consists of quarterwavelength stacks of gallium arsenide and aluminium gallium arsenide or alloys thereof. The bottom mirror 8 is not shown to scale. In practice, it should be about half the thickness shown. An active layer 10 consists of indium gallium arsenide phosphide dots grown lattice mismatched to the material of the bottom mirror 8. The quantum dots are embedded in aluminium gallium arsenide or GaAs to form a quantum well.
The top mirror 11 consists of a stack of dielectric material such as a silicon dioxide or silicon nitride based stack, or an airgap based stack.
A ring-shaped contact 12 provides a field electrode. The mirror 1 1 is surrounded by a ground contact 13.
The above structure can be grown on a single substrate using conventional techniques; i.e. MOVPE, metal organic vapor phase epitaxy or MBE molecular beam epitaxy.
The 980 mn VCSEL diode 1 formed in the same structure as the 1300 nm VCSEL 9 acts as an optical pump to create a population inversion at the active layer 10 of the main VCSEL 9. Since the pumping VCSEL is part of the same structure, there is no need to provide any optical elements to achieve good optical coupling.
The pump VCSEL 1, operating at 980 nm is activated by applying a DC bias between its bottom contact 5 and the bottom mirror 8 of the main VCSEL 9 operating at 1300 nm.
The main VCSEL 9 is modulated by using an external electrical o field applied perpendicular to the active layer 10, employing the Stark-effect to deliberately change the bandgap of the active layer 10 and hence move the emission wavelength into and out of resonance with the optical cavity formed between the top and bottom mirrors. The optical output will therefore be modulated by the electrical field and not as by injected carriers. The advantage of this arrangement is that the 1300 nm VCSEL will always be above threshold current so there is less need to use a monitoring device.
The 1300 nm VCSEL 9 has a bottom mirror consisting of aluminum gallium arsenide and its alloys. The active layer consists of indium gallium arsenide phosphide quantum dots which maybe grown lattice mismatched to the bottom mirror material. The quantum dots are embedded in aluminum gallium arsenide or GaAs to form a quantum well. The top mirror will consist of a stack of dielectric material, or possibly air gaps.
The electrical field is supplied by contacts 12 on the top surface and a contact 13 to the 1300 nm VCSEL bottom mirror, which may serve as ground.
The complete structure described above may be grown in one run and on one substrate and there is no need to fuse any of the semiconductor layers.
Several variations of the invention are possibie. The invention may apply to other semiconducting material systems, the mirrors may both be dielectric, and in such a case the pump VCSEL top mirror may serve as ground.
It may be possible not to use quantum dots for the active layer if in the future homogenous 1300 nm active layers can be grown lattice matched to gallium arsenide. Another variation is to grow or to fuse the o 980 nm pump VCSEL onto an indium phosphide substrate containing the 1300 nm bottom mirror and the active layers.
The invention meets the need for a 1300 nm light emitting device that may compete successfully with traditional 1300 nm edge-emitting laser diodes that are notoriously expensive.
The invention is applicable to other semiconducting material systems. If no fusion is employed, the pump VCSEL top mirror may serve as ground. The active layer can also consist of 1300 nm strained InGaAsP quantum wells lattice matched to GaAs or AlGaAs.
If fusion is employed, the top layer may be made of InP with InAs quantum dots or alloys thereof, or InP/lnGaAsP strained quantum wells or alloys thereof. The top mirror is a dielectric. The bottom mirror is an InP/lnGaAsP quarterwavelength stack, the InP buffer layer, and the bottom VCSEL structure remain the same. Fusion is accomplished between the InP and GaAs buffer layer.
INTERNAL OPTICAL PUMPING
This invention relates to the field of laser diodes, and more particularly to a field modulated vertical cavity surface-emitting laser with an internal optical pumping.
VCSELs or vertical cavity surface-emitting laser diodes are known in the art. While 850 nm current modulated VCSEL laser diodes are commercially available, it is hard to realize a 1300 nm VCSEL due to technical difficulties. In a VCSEL, the optical cavity needs to be defined by mirrors having high reflectivity and low loss to create laser action at room temperature. In addition, the mirrors need to be electrically conductive in order to allow current injection.
Up to the present time, it has not been possible to grow mirrors of the desired quality on substrates made of indium phosphide, emitting at 1300 nm.
It has been demonstrated that it is possible to fuse mirrors made of aluminum gallium arsenide and its alloys onto an active layer of if indium gallium arsenide phosphide, emitting at 1300 nm. However, this procedure is complicated. The active layer is only about 100 nm thick and it needs to be separated from the substrate on which it was grown and transported to a substrate containing the first mirror, then the stack consisting of the active layer and the first mirror again need to be transported to a substrate containing the second mirror. Obviously, no significant yield can be expected using this method. Also, three wafers are consumed for each functional device fabricated.
It has been proposed that one of the mirrors be replaced by a dielectric mirror using silicon and low refractive index materials such as oxides, nitrides or even an airgap. The problem is that the mirror is then no longer conductive so that carrier injection pumping is not possible.
An object of the invention is to overcome this problem.
According to the present invention there is provided a laser diode structure, comprising top and boKom mirrors defining a first laser cavity containing a laser medium and designed to resonate at a flrst wavelength, at least one of said mirrors being electrically non-conductive; and a second laser cavity designed to resonate at a second wavelength less than said first wavelength, said second laser cavity being optically coupled to said first laser cavity so as to optically pump said laser medium and create laser action in said first laser cavity.
The laser diode is preferably a VCSEL, (vertical cavity surface emitting laser) diode.
The problems of the prior art are overcome by optically pumping the VCSEL operating at the longer wavelength with a VCSEL operating at a shorter wavelength that can be pumped by other means, such as carrier injection. The optical pumping is preferably carried out with the aid of a second VCSEL, which since it operates at a shorter wavelength can be fabricated on the same substrate in a conventional manner using conductive mirrors and carrier injection pumping.
Typically, the main VCSEL operates at 1300 nm and the VCSEL that provides the optical pumping operates at 980 nm.
The invention will now be described in more detail, by way of example only, with reference to the accompanying drawings, in which the single figure is a cross section through a VCSEL in accordance with the invention.
In the figure, the 1300 nm VCSEL made in accordance with the principle of the invention comprises a conventional 980 nm VCSEL 1 acting as an optical pump and having a bottom mirror 2 of a GaAs/AlGaAs quarte~avelength stack for 1300nm reflection, an active medium 3 of InGaAs quantum wells confined between GaAs layers or an AlGaAs alloy, and a top mirror 4 of a GaAs/AlGaAs quarterwavelength stack. A backside contact 5 is formed on the backside of the VCSEL 1 and isolation layers 6 are provided in a conventional manner.
An intermediate GaAs buffer layer 7 is deposited on the top mirror 4. The bottom mirror 8 of the main VCSEL 9 is grown on the buffer layer 7. The bottom mirror 8 consists of quarterwavelength stacks of gallium arsenide and aluminium gallium arsenide or alloys thereof. The bottom mirror 8 is not shown to scale. In practice, it should be about half the thickness shown. An active layer 10 consists of indium gallium arsenide phosphide dots grown lattice mismatched to the material of the bottom mirror 8. The quantum dots are embedded in aluminium gallium arsenide or GaAs to form a quantum well.
The top mirror 11 consists of a stack of dielectric material such as a silicon dioxide or silicon nitride based stack, or an airgap based stack.
A ring-shaped contact 12 provides a field electrode. The mirror 1 1 is surrounded by a ground contact 13.
The above structure can be grown on a single substrate using conventional techniques; i.e. MOVPE, metal organic vapor phase epitaxy or MBE molecular beam epitaxy.
The 980 mn VCSEL diode 1 formed in the same structure as the 1300 nm VCSEL 9 acts as an optical pump to create a population inversion at the active layer 10 of the main VCSEL 9. Since the pumping VCSEL is part of the same structure, there is no need to provide any optical elements to achieve good optical coupling.
The pump VCSEL 1, operating at 980 nm is activated by applying a DC bias between its bottom contact 5 and the bottom mirror 8 of the main VCSEL 9 operating at 1300 nm.
The main VCSEL 9 is modulated by using an external electrical o field applied perpendicular to the active layer 10, employing the Stark-effect to deliberately change the bandgap of the active layer 10 and hence move the emission wavelength into and out of resonance with the optical cavity formed between the top and bottom mirrors. The optical output will therefore be modulated by the electrical field and not as by injected carriers. The advantage of this arrangement is that the 1300 nm VCSEL will always be above threshold current so there is less need to use a monitoring device.
The 1300 nm VCSEL 9 has a bottom mirror consisting of aluminum gallium arsenide and its alloys. The active layer consists of indium gallium arsenide phosphide quantum dots which maybe grown lattice mismatched to the bottom mirror material. The quantum dots are embedded in aluminum gallium arsenide or GaAs to form a quantum well. The top mirror will consist of a stack of dielectric material, or possibly air gaps.
The electrical field is supplied by contacts 12 on the top surface and a contact 13 to the 1300 nm VCSEL bottom mirror, which may serve as ground.
The complete structure described above may be grown in one run and on one substrate and there is no need to fuse any of the semiconductor layers.
Several variations of the invention are possibie. The invention may apply to other semiconducting material systems, the mirrors may both be dielectric, and in such a case the pump VCSEL top mirror may serve as ground.
It may be possible not to use quantum dots for the active layer if in the future homogenous 1300 nm active layers can be grown lattice matched to gallium arsenide. Another variation is to grow or to fuse the o 980 nm pump VCSEL onto an indium phosphide substrate containing the 1300 nm bottom mirror and the active layers.
The invention meets the need for a 1300 nm light emitting device that may compete successfully with traditional 1300 nm edge-emitting laser diodes that are notoriously expensive.
The invention is applicable to other semiconducting material systems. If no fusion is employed, the pump VCSEL top mirror may serve as ground. The active layer can also consist of 1300 nm strained InGaAsP quantum wells lattice matched to GaAs or AlGaAs.
If fusion is employed, the top layer may be made of InP with InAs quantum dots or alloys thereof, or InP/lnGaAsP strained quantum wells or alloys thereof. The top mirror is a dielectric. The bottom mirror is an InP/lnGaAsP quarterwavelength stack, the InP buffer layer, and the bottom VCSEL structure remain the same. Fusion is accomplished between the InP and GaAs buffer layer.
Claims (17)
1. A laser diode structure, comprising top and bottom mirrors defining a first laser cavity containing a laser medium and designed to resonate at a first wavelength, at least one of said mirrors being electrically non-conductive; and a second laser cavity designed to resonate at a second wavelength less than said first wavelength, said second laser cavity being optically coupled to said first laser cavity so as to optically pump said laser medium and create laser action in said first laser cavity.
2. A structure as claimed in claim 1, wherein said laser diode is a vertical cavity surface emitting (VCSEL) diode.
3. A structure as claimed in claim 2, wherein the second laser cavity is provided by a VCSEL stacked below said first laser cavity and having conductive mirrors to permit pumping by carrier injection.
4. A structure as claimed in claim 2, wherein the top mirror of the first laser cavity is made of a dielectric material.
5. A structure as claimed in claim 4, wherein said dielectric material is selected from the group consisting of silicon dioxide and silicon nitride.
6. A structure as claimed in claim 5, wherein the top mirror is made of an airgap.
7. A structure as claimed in claim 1, wherein said bottom mirror is made from a material selected from the group consisting of: gallium arsenide and an alloy thereof.
8. A structure as claimed in claim 1, wherein said laser medium consists of indium gallium arsenide phosphide quantum dots or an alloy combination thereof embedded in GaAlAs or GaAs or that emits at 1300nm.
9. A structure as claimed in claim 8, wherein said quantum dots are grown lattice mismatched to the material forming the bottom mirror.
10. A structure as claimed in claim 1, further comprising contacts for applying an external electric field to the laser medium to change the bandgap.
11. A structure as claimed in claim 10, wherein said contacts are arranged to apply said field perpendicular to the laser medium.
12. A structure as claimed in claim 11, wherein in one of said contacts is located on the top mirror, and the other of said contacts is located laterally adjacent the active medium.
13. A structure as claimed in claim 1 wherein both mirrors are dielectric.
14. A structure as claimed in claim 1, wherein the laser medium comprises 1300nm InGaAsP quantum wells lattice matched to GaAS
or AlGaAs.
or AlGaAs.
15. A structure as claimed in claim 1, wherein the laser medium comprises a top active layer of InP with InAs quantum dots or alloys thereof, or InP/lnGaAsP strained quantum wells or alloys thereof.
16. A structure as claimed in claim 1, wherein the top mirror is a dielectric.
17. A structure as claimed in claim 1, wherein the bottom mirror is an InPGaAsP quarterwavelength stack.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9714820.9 | 1997-07-14 | ||
| GBGB9714820.9A GB9714820D0 (en) | 1997-07-14 | 1997-07-14 | Field modulated vertical cavity surface-emitting laser with internal optical pumping |
| GB9718082.2 | 1997-08-27 | ||
| GBGB9718082.2A GB9718082D0 (en) | 1997-08-27 | 1997-08-27 | Field modulated vertical cavity surface-emitting laser with internal optical pumping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2242670A1 true CA2242670A1 (en) | 1999-01-14 |
Family
ID=26311881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002242670A Abandoned CA2242670A1 (en) | 1997-07-14 | 1998-07-09 | Field modulated vertical cavity surface-emitting laser with internal optical pumping |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6285704B1 (en) |
| EP (1) | EP0892474B1 (en) |
| CA (1) | CA2242670A1 (en) |
| DE (1) | DE69808192T2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115079617A (en) * | 2022-07-22 | 2022-09-20 | 中国科学院精密测量科学与技术创新研究院 | Servo loop locking device of miniature Mz optical pump atomic sensor |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849862B2 (en) * | 1997-11-18 | 2005-02-01 | Technologies And Devices International, Inc. | III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
| US6483859B1 (en) | 1999-06-24 | 2002-11-19 | Lockheed Martin Corporation | System and method for high-speed laser detection of ultrasound |
| US7286241B2 (en) * | 1999-06-24 | 2007-10-23 | Lockheed Martin Corporation | System and method for high-speed laser detection of ultrasound |
| US6795477B1 (en) * | 1999-08-12 | 2004-09-21 | Cortek Inc. | Method for modulating an optically pumped, tunable vertical cavity surface emitting laser (VCSEL) |
| AU2470301A (en) * | 1999-10-29 | 2001-05-08 | E20 Communications, Inc. | Modulated integrated optically pumped vertical cavity surface emitting lasers |
| US6424669B1 (en) | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
| JP2001223429A (en) * | 2000-02-09 | 2001-08-17 | Fuji Photo Film Co Ltd | Semiconductor laser device |
| DE10108079A1 (en) | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optically-pumped surface-emitting semiconductor laser device, has edge-emitting structure of pumping source and radiation-emitting quantum pot type structure applied to common substrate |
| US6816525B2 (en) | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
| US6600169B2 (en) * | 2000-09-22 | 2003-07-29 | Andreas Stintz | Quantum dash device |
| US6553051B1 (en) * | 2000-10-31 | 2003-04-22 | Agilent Technologies, Inc. | System for optically pumping a long wavelength laser using a short wavelength laser |
| US6782021B2 (en) * | 2001-03-02 | 2004-08-24 | Xiaodong Huang | Quantum dot vertical cavity surface emitting laser |
| US6556610B1 (en) | 2001-04-12 | 2003-04-29 | E20 Communications, Inc. | Semiconductor lasers |
| US6567454B1 (en) * | 2001-05-01 | 2003-05-20 | Sandia Corporation | Coupled-resonator vertical-cavity lasers with two active gain regions |
| WO2003001636A1 (en) * | 2001-06-20 | 2003-01-03 | Infineon Technologies Ag | Photon emitter and data transmission device |
| US6717964B2 (en) | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
| US6714307B2 (en) | 2001-10-16 | 2004-03-30 | Zygo Corporation | Measurement of complex surface shapes using a spherical wavefront |
| FR2833758B1 (en) * | 2001-12-13 | 2004-12-10 | Commissariat Energie Atomique | MICRO-CAVITY LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
| DE10214120B4 (en) * | 2002-03-28 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Optically pumpable surface emitting semiconductor laser device |
| US6865208B1 (en) * | 2002-06-10 | 2005-03-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultrafast laser beam switching and pulse train generation by using coupled vertical-cavity, surface-emitting lasers (VCSELS) |
| DE10341085A1 (en) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Optically pumped semiconductor device and method of making the same |
| JP4819330B2 (en) * | 2003-07-31 | 2011-11-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optical pump beam emitting semiconductor device and manufacturing method thereof |
| US7282732B2 (en) * | 2003-10-24 | 2007-10-16 | Stc. Unm | Quantum dot structures |
| TW200524236A (en) * | 2003-12-01 | 2005-07-16 | Nl Nanosemiconductor Gmbh | Optoelectronic device incorporating an interference filter |
| US7369583B2 (en) * | 2004-06-07 | 2008-05-06 | Innolume Gmbh | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer |
| US7593436B2 (en) * | 2006-06-16 | 2009-09-22 | Vi Systems Gmbh | Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer |
| US7772615B2 (en) * | 2007-08-10 | 2010-08-10 | Connector Optics | Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon |
| US7580595B1 (en) | 2008-05-09 | 2009-08-25 | Technische Universitaet Berlin | Data transmission optoelectric device |
| GB2526140B (en) | 2014-05-15 | 2019-03-13 | Toshiba Res Europe Limited | Photon Source comprising a Control Signal and a Quantum Structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2927908B2 (en) * | 1990-08-14 | 1999-07-28 | キヤノン株式会社 | Light emitting element |
| DE9012119U1 (en) | 1990-08-23 | 1991-12-19 | Muenz, Werner, 8056 Neufahrn, De | |
| DE69217344T2 (en) * | 1991-12-16 | 1997-08-21 | Ibm | Tunable laser with coupled quantum well structure |
| US5513204A (en) | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
| US5914976A (en) | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
-
1998
- 1998-07-09 CA CA002242670A patent/CA2242670A1/en not_active Abandoned
- 1998-07-13 EP EP98305554A patent/EP0892474B1/en not_active Expired - Lifetime
- 1998-07-13 US US09/114,142 patent/US6285704B1/en not_active Expired - Lifetime
- 1998-07-13 DE DE69808192T patent/DE69808192T2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115079617A (en) * | 2022-07-22 | 2022-09-20 | 中国科学院精密测量科学与技术创新研究院 | Servo loop locking device of miniature Mz optical pump atomic sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69808192D1 (en) | 2002-10-31 |
| EP0892474B1 (en) | 2002-09-25 |
| DE69808192T2 (en) | 2003-04-30 |
| US6285704B1 (en) | 2001-09-04 |
| EP0892474A1 (en) | 1999-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6285704B1 (en) | Field modulated vertical cavity surface-emitting laser with internal optical pumping | |
| US5903586A (en) | Long wavelength vertical cavity surface emitting laser | |
| US6697413B2 (en) | Tunable vertical-cavity surface-emitting laser with tuning junction | |
| US5943359A (en) | Long wavelength VCSEL | |
| US5363397A (en) | Integrated short cavity laser with bragg mirrors | |
| US4660207A (en) | Surface-emitting light emitting device | |
| US6026111A (en) | Vertical cavity surface emitting laser device having an extended cavity | |
| EP1746694B1 (en) | Vcsel system with transverse p/n junction | |
| US5978398A (en) | Long wavelength vertical cavity surface emitting laser | |
| US5784399A (en) | Polarization mode selection by distributed Bragg reflector in a quantum well laser | |
| US6542530B1 (en) | Electrically pumped long-wavelength VCSEL and methods of fabrication | |
| EP1378039B1 (en) | Vertical cavity surface emitting laser | |
| US6061380A (en) | Vertical cavity surface emitting laser with doped active region and method of fabrication | |
| US5883912A (en) | Long wavelength VCSEL | |
| US6611544B1 (en) | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers | |
| US5747366A (en) | Method of fabricating a surface emitting semiconductor laser | |
| US5732103A (en) | Long wavelength VCSEL | |
| US6341137B1 (en) | Wavelength division multiplexed array of long-wavelength vertical cavity lasers | |
| US6097041A (en) | Light-emitting diode with anti-reflector | |
| US6878958B2 (en) | Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector | |
| JPH09283862A (en) | Single resonator mode optoelectronic device | |
| US6021146A (en) | Vertical cavity surface emitting laser for high power single mode operation and method of fabrication | |
| US6835581B2 (en) | Method of coating optical device facets with dielectric layer and device made therefrom | |
| US6696308B1 (en) | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication | |
| KR100545113B1 (en) | Vertical Common Surface Emission Laser with Visible Wavelength |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |