EP2234142A1
(en)
|
1997-04-11 |
2010-09-29 |
Nichia Corporation |
Nitride semiconductor substrate
|
JP3036495B2
(en)
*
|
1997-11-07 |
2000-04-24 |
豊田合成株式会社 |
Method for manufacturing gallium nitride-based compound semiconductor
|
US6500257B1
(en)
*
|
1998-04-17 |
2002-12-31 |
Agilent Technologies, Inc. |
Epitaxial material grown laterally within a trench and method for producing same
|
TW417315B
(en)
*
|
1998-06-18 |
2001-01-01 |
Sumitomo Electric Industries |
GaN single crystal substrate and its manufacture method of the same
|
JP3201475B2
(en)
*
|
1998-09-14 |
2001-08-20 |
松下電器産業株式会社 |
Semiconductor device and method of manufacturing the same
|
JP3592553B2
(en)
*
|
1998-10-15 |
2004-11-24 |
株式会社東芝 |
Gallium nitride based semiconductor device
|
US20010042866A1
(en)
*
|
1999-02-05 |
2001-11-22 |
Carrie Carter Coman |
Inxalygazn optical emitters fabricated via substrate removal
|
JP3770014B2
(en)
*
|
1999-02-09 |
2006-04-26 |
日亜化学工業株式会社 |
Nitride semiconductor device
|
US6327288B1
(en)
*
|
1999-03-05 |
2001-12-04 |
Lumileds Lighting, U.S., Llc |
Buried heterostructure for lasers and light emitting diodes
|
JP4037554B2
(en)
*
|
1999-03-12 |
2008-01-23 |
株式会社東芝 |
Nitride semiconductor light emitting device and manufacturing method thereof
|
US6844574B1
(en)
*
|
1999-03-12 |
2005-01-18 |
Sumitomo Chemical Company, Limited |
III-V compound semiconductor
|
JP3550070B2
(en)
*
|
1999-03-23 |
2004-08-04 |
三菱電線工業株式会社 |
GaN-based compound semiconductor crystal, growth method thereof and semiconductor substrate
|
JP2000286448A
(en)
*
|
1999-03-31 |
2000-10-13 |
Toyoda Gosei Co Ltd |
Iii group nitride compound semiconductor luminous element
|
JP3702700B2
(en)
*
|
1999-03-31 |
2005-10-05 |
豊田合成株式会社 |
Group III nitride compound semiconductor device and method for manufacturing the same
|
JP3587081B2
(en)
|
1999-05-10 |
2004-11-10 |
豊田合成株式会社 |
Method of manufacturing group III nitride semiconductor and group III nitride semiconductor light emitting device
|
JP3555500B2
(en)
*
|
1999-05-21 |
2004-08-18 |
豊田合成株式会社 |
Group III nitride semiconductor and method of manufacturing the same
|
JP2001044121A
(en)
*
|
1999-06-07 |
2001-02-16 |
Agilent Technol Inc |
Epitaxial layer structure and manufacture thereof
|
GB2350927A
(en)
*
|
1999-06-12 |
2000-12-13 |
Sharp Kk |
A method growing nitride semiconductor layer by molecular beam epitaxy
|
TW469511B
(en)
*
|
1999-07-26 |
2001-12-21 |
Agency Ind Science Techn |
ZnO compound-based semiconductor light emitting element, and manufacturing process therefor
|
US6580098B1
(en)
|
1999-07-27 |
2003-06-17 |
Toyoda Gosei Co., Ltd. |
Method for manufacturing gallium nitride compound semiconductor
|
GB9919479D0
(en)
*
|
1999-08-17 |
1999-10-20 |
Imperial College |
Island arrays
|
JP4005275B2
(en)
*
|
1999-08-19 |
2007-11-07 |
日亜化学工業株式会社 |
Nitride semiconductor device
|
JP4145437B2
(en)
*
|
1999-09-28 |
2008-09-03 |
住友電気工業株式会社 |
Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate
|
US6821805B1
(en)
*
|
1999-10-06 |
2004-11-23 |
Matsushita Electric Industrial Co., Ltd. |
Semiconductor device, semiconductor substrate, and manufacture method
|
EP1104031B1
(en)
*
|
1999-11-15 |
2012-04-11 |
Panasonic Corporation |
Nitride semiconductor laser diode and method of fabricating the same
|
JP3455512B2
(en)
|
1999-11-17 |
2003-10-14 |
日本碍子株式会社 |
Substrate for epitaxial growth and method of manufacturing the same
|
JP2001168028A
(en)
*
|
1999-12-03 |
2001-06-22 |
Sony Corp |
Method of manufacturing nitride-based iii-v compound crystal, nitride-based iii-v compound crystalline substrate, nitride-based iii-v compound crystalline film, and method of manufacturing device
|
JP2001176805A
(en)
*
|
1999-12-16 |
2001-06-29 |
Sony Corp |
Method for manufacturing crystal of nitride-based iii-v- group compound. nitride-based iii-v-group crystal substrate, nitride-based iii-v-group compound crystal film, and method for manufacturing device
|
US6475882B1
(en)
|
1999-12-20 |
2002-11-05 |
Nitride Semiconductors Co., Ltd. |
Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
|
JP2001185493A
(en)
*
|
1999-12-24 |
2001-07-06 |
Toyoda Gosei Co Ltd |
Method of manufacturing group iii nitride-based compound semiconductor, and group iii nitride based compound semiconductor device
|
JP4432180B2
(en)
|
1999-12-24 |
2010-03-17 |
豊田合成株式会社 |
Group III nitride compound semiconductor manufacturing method, group III nitride compound semiconductor device, and group III nitride compound semiconductor
|
FR2803433B1
(en)
*
|
1999-12-30 |
2003-02-14 |
Thomson Csf |
PROCESS FOR PRODUCING A METAL GRID BURIED IN A STRUCTURE OF SEMICONDUCTOR MATERIAL
|
JP2001196697A
(en)
*
|
2000-01-13 |
2001-07-19 |
Fuji Photo Film Co Ltd |
Substrate for semiconductor element and its manufacturing method, and semiconductor element using the same
|
JP3929008B2
(en)
*
|
2000-01-14 |
2007-06-13 |
シャープ株式会社 |
Nitride-based compound semiconductor light-emitting device and method for manufacturing the same
|
US6693033B2
(en)
|
2000-02-10 |
2004-02-17 |
Motorola, Inc. |
Method of removing an amorphous oxide from a monocrystalline surface
|
EP1187229A4
(en)
*
|
2000-02-21 |
2009-06-03 |
Sanken Electric Co Ltd |
Light-emitting semiconductor device and method of manufacture thereof
|
US6566231B2
(en)
*
|
2000-02-24 |
2003-05-20 |
Matsushita Electric Industrial Co., Ltd. |
Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region
|
AU2001241108A1
(en)
|
2000-03-14 |
2001-09-24 |
Toyoda Gosei Co. Ltd. |
Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
|
JP2001267242A
(en)
*
|
2000-03-14 |
2001-09-28 |
Toyoda Gosei Co Ltd |
Group iii nitride-based compound semiconductor and method of manufacturing the same
|
JP3623713B2
(en)
*
|
2000-03-24 |
2005-02-23 |
日本電気株式会社 |
Nitride semiconductor light emitting device
|
TW518767B
(en)
*
|
2000-03-31 |
2003-01-21 |
Toyoda Gosei Kk |
Production method of III nitride compound semiconductor and III nitride compound semiconductor element
|
US20050184302A1
(en)
*
|
2000-04-04 |
2005-08-25 |
Toshimasa Kobayashi |
Nitride semiconductor device and method of manufacturing the same
|
JP2001313259A
(en)
|
2000-04-28 |
2001-11-09 |
Toyoda Gosei Co Ltd |
Method for producing iii nitride based compound semiconductor substrate and semiconductor element
|
JP3285341B2
(en)
|
2000-06-01 |
2002-05-27 |
士郎 酒井 |
Method of manufacturing gallium nitride based compound semiconductor
|
US6836498B2
(en)
*
|
2000-06-05 |
2004-12-28 |
Sony Corporation |
Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof
|
US6501973B1
(en)
|
2000-06-30 |
2002-12-31 |
Motorola, Inc. |
Apparatus and method for measuring selected physical condition of an animate subject
|
JP3968968B2
(en)
|
2000-07-10 |
2007-08-29 |
住友電気工業株式会社 |
Manufacturing method of single crystal GaN substrate
|
US6555946B1
(en)
|
2000-07-24 |
2003-04-29 |
Motorola, Inc. |
Acoustic wave device and process for forming the same
|
US6590236B1
(en)
|
2000-07-24 |
2003-07-08 |
Motorola, Inc. |
Semiconductor structure for use with high-frequency signals
|
JP4356208B2
(en)
*
|
2000-08-01 |
2009-11-04 |
ソニー株式会社 |
Vapor phase growth method of nitride semiconductor
|
JP5095064B2
(en)
*
|
2000-08-04 |
2012-12-12 |
ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア |
Semiconductor film having nitride layer deposited on silicon substrate and method for manufacturing the same
|
US7619261B2
(en)
*
|
2000-08-07 |
2009-11-17 |
Toyoda Gosei Co., Ltd. |
Method for manufacturing gallium nitride compound semiconductor
|
US6586819B2
(en)
*
|
2000-08-14 |
2003-07-01 |
Nippon Telegraph And Telephone Corporation |
Sapphire substrate, semiconductor device, electronic component, and crystal growing method
|
JP3466144B2
(en)
|
2000-09-22 |
2003-11-10 |
士郎 酒井 |
How to roughen the surface of a semiconductor
|
US6493497B1
(en)
|
2000-09-26 |
2002-12-10 |
Motorola, Inc. |
Electro-optic structure and process for fabricating same
|
US6638838B1
(en)
|
2000-10-02 |
2003-10-28 |
Motorola, Inc. |
Semiconductor structure including a partially annealed layer and method of forming the same
|
JP3863720B2
(en)
*
|
2000-10-04 |
2006-12-27 |
三洋電機株式会社 |
Nitride semiconductor device and method for forming nitride semiconductor
|
DE10056645B4
(en)
*
|
2000-11-09 |
2007-03-08 |
Azzurro Semiconductors Ag |
Process for the preparation of crack-free, planar group-III-N, group III-V-N and metal-nitrogen device structures on Si substrates by epitaxial methods
|
JP2002151796A
(en)
*
|
2000-11-13 |
2002-05-24 |
Sharp Corp |
Nitride semiconductor light emitting element and device comprising it
|
US6501121B1
(en)
|
2000-11-15 |
2002-12-31 |
Motorola, Inc. |
Semiconductor structure
|
WO2002044444A1
(en)
|
2000-11-30 |
2002-06-06 |
Kyma Technologies, Inc. |
Method and apparatus for producing miiin columns and miiin materials grown thereon
|
US6787010B2
(en)
|
2000-11-30 |
2004-09-07 |
North Carolina State University |
Non-thermionic sputter material transport device, methods of use, and materials produced thereby
|
US6559471B2
(en)
|
2000-12-08 |
2003-05-06 |
Motorola, Inc. |
Quantum well infrared photodetector and method for fabricating same
|
TW525216B
(en)
|
2000-12-11 |
2003-03-21 |
Semiconductor Energy Lab |
Semiconductor device, and manufacturing method thereof
|
US6649287B2
(en)
|
2000-12-14 |
2003-11-18 |
Nitronex Corporation |
Gallium nitride materials and methods
|
JP3988018B2
(en)
*
|
2001-01-18 |
2007-10-10 |
ソニー株式会社 |
Crystal film, crystal substrate and semiconductor device
|
US7052979B2
(en)
*
|
2001-02-14 |
2006-05-30 |
Toyoda Gosei Co., Ltd. |
Production method for semiconductor crystal and semiconductor luminous element
|
US7233028B2
(en)
*
|
2001-02-23 |
2007-06-19 |
Nitronex Corporation |
Gallium nitride material devices and methods of forming the same
|
US6956250B2
(en)
|
2001-02-23 |
2005-10-18 |
Nitronex Corporation |
Gallium nitride materials including thermally conductive regions
|
US6611002B2
(en)
|
2001-02-23 |
2003-08-26 |
Nitronex Corporation |
Gallium nitride material devices and methods including backside vias
|
JP3679720B2
(en)
*
|
2001-02-27 |
2005-08-03 |
三洋電機株式会社 |
Nitride semiconductor device and method for forming nitride semiconductor
|
US6673646B2
(en)
|
2001-02-28 |
2004-01-06 |
Motorola, Inc. |
Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
|
US6576932B2
(en)
*
|
2001-03-01 |
2003-06-10 |
Lumileds Lighting, U.S., Llc |
Increasing the brightness of III-nitride light emitting devices
|
JP2002280314A
(en)
*
|
2001-03-22 |
2002-09-27 |
Toyoda Gosei Co Ltd |
Manufacturing method of iii nitride compound semiconductor group, and the iii nitride compound semiconductor element based thereon
|
JP3520919B2
(en)
|
2001-03-27 |
2004-04-19 |
士郎 酒井 |
Method for manufacturing nitride semiconductor device
|
JP3705142B2
(en)
*
|
2001-03-27 |
2005-10-12 |
ソニー株式会社 |
Nitride semiconductor device and manufacturing method thereof
|
EP2400046A1
(en)
*
|
2001-03-30 |
2011-12-28 |
Technologies and Devices International Inc. |
Method and apparatus for growing submicron group III nitride structures utilizing HVPE techniques
|
JP3714188B2
(en)
*
|
2001-04-19 |
2005-11-09 |
ソニー株式会社 |
Nitride semiconductor vapor phase growth method and nitride semiconductor device
|
US20040029365A1
(en)
*
|
2001-05-07 |
2004-02-12 |
Linthicum Kevin J. |
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
|
US6784074B2
(en)
|
2001-05-09 |
2004-08-31 |
Nsc-Nanosemiconductor Gmbh |
Defect-free semiconductor templates for epitaxial growth and method of making same
|
US6653166B2
(en)
*
|
2001-05-09 |
2003-11-25 |
Nsc-Nanosemiconductor Gmbh |
Semiconductor device and method of making same
|
US6958497B2
(en)
*
|
2001-05-30 |
2005-10-25 |
Cree, Inc. |
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
|
US7692182B2
(en)
*
|
2001-05-30 |
2010-04-06 |
Cree, Inc. |
Group III nitride based quantum well light emitting device structures with an indium containing capping structure
|
US20040169192A1
(en)
*
|
2001-06-04 |
2004-09-02 |
Hisaki Kato |
Method for producing group III nitride compounds semiconductor
|
IL159165A0
(en)
*
|
2001-06-06 |
2004-06-01 |
Ammono Sp Zoo |
Process and apparatus for obtaining bulk monocrystalline gallium containing nitride
|
CA2446656A1
(en)
*
|
2001-06-15 |
2002-12-27 |
Cree, Inc. |
Gan based led formed on a sic substrate
|
US6709989B2
(en)
|
2001-06-21 |
2004-03-23 |
Motorola, Inc. |
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
|
JP3548735B2
(en)
|
2001-06-29 |
2004-07-28 |
士郎 酒井 |
Method of manufacturing gallium nitride based compound semiconductor
|
US7198671B2
(en)
*
|
2001-07-11 |
2007-04-03 |
Matsushita Electric Industrial Co., Ltd. |
Layered substrates for epitaxial processing, and device
|
US6531740B2
(en)
|
2001-07-17 |
2003-03-11 |
Motorola, Inc. |
Integrated impedance matching and stability network
|
US6646293B2
(en)
|
2001-07-18 |
2003-11-11 |
Motorola, Inc. |
Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
|
US6498358B1
(en)
|
2001-07-20 |
2002-12-24 |
Motorola, Inc. |
Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
|
US6693298B2
(en)
|
2001-07-20 |
2004-02-17 |
Motorola, Inc. |
Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
|
JP3758537B2
(en)
*
|
2001-07-23 |
2006-03-22 |
豊田合成株式会社 |
Method for producing group III nitride compound semiconductor
|
US6667196B2
(en)
|
2001-07-25 |
2003-12-23 |
Motorola, Inc. |
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
|
US6589856B2
(en)
|
2001-08-06 |
2003-07-08 |
Motorola, Inc. |
Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
|
US6639249B2
(en)
|
2001-08-06 |
2003-10-28 |
Motorola, Inc. |
Structure and method for fabrication for a solid-state lighting device
|
US6673667B2
(en)
|
2001-08-15 |
2004-01-06 |
Motorola, Inc. |
Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
|
DE10142656A1
(en)
*
|
2001-08-31 |
2003-03-27 |
Osram Opto Semiconductors Gmbh |
Production of a III-V nitride semiconductor layer based on gallium nitride comprises applying a mask layer on a substrate to form masked regions and non-masked regions, and growing nitride semiconductor layer over the non-masked regions
|
EP1291904A3
(en)
*
|
2001-09-10 |
2009-10-07 |
FUJIFILM Corporation |
GaN substrate formed over GaN layer having discretely formed minute holes produced by selective growth
|
JP3690326B2
(en)
|
2001-10-12 |
2005-08-31 |
豊田合成株式会社 |
Method for producing group III nitride compound semiconductor
|
US20030071327A1
(en)
*
|
2001-10-17 |
2003-04-17 |
Motorola, Inc. |
Method and apparatus utilizing monocrystalline insulator
|
EP1453158A4
(en)
|
2001-10-26 |
2007-09-19 |
Ammono Sp Zoo |
Nitride semiconductor laser element, and production method therefor
|
DE10155442A1
(en)
*
|
2001-11-12 |
2003-05-28 |
Osram Opto Semiconductors Gmbh |
Ohmic contact structure and process for its manufacture
|
TW561526B
(en)
*
|
2001-12-21 |
2003-11-11 |
Aixtron Ag |
Method for depositing III-V semiconductor layers on a non-III-V substrate
|
TWI285918B
(en)
*
|
2002-01-11 |
2007-08-21 |
Sumitomo Chemical Co |
Method of producing 3-5 group compound semiconductor and semiconductor element
|
US8236103B2
(en)
*
|
2002-02-15 |
2012-08-07 |
Showa Denko K.K. |
Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
|
US6881983B2
(en)
*
|
2002-02-25 |
2005-04-19 |
Kopin Corporation |
Efficient light emitting diodes and lasers
|
JP4092927B2
(en)
*
|
2002-02-28 |
2008-05-28 |
豊田合成株式会社 |
Group III nitride compound semiconductor, group III nitride compound semiconductor element, and method for manufacturing group III nitride compound semiconductor substrate
|
US7005685B2
(en)
|
2002-02-28 |
2006-02-28 |
Shiro Sakai |
Gallium-nitride-based compound semiconductor device
|
JP4504610B2
(en)
*
|
2002-03-01 |
2010-07-14 |
株式会社日立製作所 |
Ridge type semiconductor laser device
|
US6791120B2
(en)
*
|
2002-03-26 |
2004-09-14 |
Sanyo Electric Co., Ltd. |
Nitride-based semiconductor device and method of fabricating the same
|
JP2003297848A
(en)
*
|
2002-04-01 |
2003-10-17 |
Matsushita Electric Ind Co Ltd |
Method of manufacturing semiconductor device
|
US7208393B2
(en)
*
|
2002-04-15 |
2007-04-24 |
The Regents Of The University Of California |
Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
|
US8809867B2
(en)
*
|
2002-04-15 |
2014-08-19 |
The Regents Of The University Of California |
Dislocation reduction in non-polar III-nitride thin films
|
KR20110132639A
(en)
*
|
2002-04-15 |
2011-12-08 |
더 리전츠 오브 더 유니버시티 오브 캘리포니아 |
Dislocation reduction in non-polar gallium nitride thin films
|
US6911079B2
(en)
*
|
2002-04-19 |
2005-06-28 |
Kopin Corporation |
Method for reducing the resistivity of p-type II-VI and III-V semiconductors
|
US20060138431A1
(en)
|
2002-05-17 |
2006-06-29 |
Robert Dwilinski |
Light emitting device structure having nitride bulk single crystal layer
|
WO2003107442A2
(en)
|
2002-06-17 |
2003-12-24 |
Kopin Corporation |
Electrode for p-type gallium nitride-based semiconductors
|
US6734091B2
(en)
|
2002-06-28 |
2004-05-11 |
Kopin Corporation |
Electrode for p-type gallium nitride-based semiconductors
|
US7002180B2
(en)
*
|
2002-06-28 |
2006-02-21 |
Kopin Corporation |
Bonding pad for gallium nitride-based light-emitting device
|
US6955985B2
(en)
|
2002-06-28 |
2005-10-18 |
Kopin Corporation |
Domain epitaxy for thin film growth
|
FR2842832B1
(en)
*
|
2002-07-24 |
2006-01-20 |
Lumilog |
METHOD FOR REALIZING VAPOR EPITAXY OF A GALLIUM NITRIDE FILM WITH LOW FAULT DENSITY
|
TWI228323B
(en)
*
|
2002-09-06 |
2005-02-21 |
Sony Corp |
Semiconductor light emitting device and its manufacturing method, integrated semiconductor light emitting device and manufacturing method thereof, image display device and its manufacturing method, illumination device and manufacturing method thereof
|
JP2004107114A
(en)
*
|
2002-09-17 |
2004-04-08 |
Toyoda Gosei Co Ltd |
Method of manufacturing group iii nitride compound semiconductor substrate
|
TW560120B
(en)
*
|
2002-09-20 |
2003-11-01 |
Chung Shan Inst Of Science |
Nitride based semiconductor laser diode device including a selective growth mask
|
DE10252060B4
(en)
*
|
2002-11-08 |
2006-10-12 |
Osram Opto Semiconductors Gmbh |
A radiation-emitting semiconductor component and method for producing a plurality of semiconductor layers
|
US7071494B2
(en)
*
|
2002-12-11 |
2006-07-04 |
Lumileds Lighting U.S. Llc |
Light emitting device with enhanced optical scattering
|
TWI352434B
(en)
|
2002-12-11 |
2011-11-11 |
Ammono Sp Zoo |
A substrate for epitaxy and a method of preparing
|
TWI334890B
(en)
|
2002-12-11 |
2010-12-21 |
Ammono Sp Zoo |
Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
|
US7427555B2
(en)
*
|
2002-12-16 |
2008-09-23 |
The Regents Of The University Of California |
Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
|
EP1576671A4
(en)
*
|
2002-12-16 |
2006-10-25 |
Univ California |
Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
|
US7186302B2
(en)
|
2002-12-16 |
2007-03-06 |
The Regents Of The University Of California |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
|
CN1729582A
(en)
*
|
2002-12-20 |
2006-02-01 |
克里公司 |
Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices
|
WO2004064212A1
(en)
*
|
2003-01-14 |
2004-07-29 |
Matsushita Electric Industrial Co. Ltd. |
Nitride semiconductor device, method for manufacturing same and method for manufacturing nitride semiconductor substrate
|
US7524691B2
(en)
*
|
2003-01-20 |
2009-04-28 |
Panasonic Corporation |
Method of manufacturing group III nitride substrate
|
US6998305B2
(en)
*
|
2003-01-24 |
2006-02-14 |
Asm America, Inc. |
Enhanced selectivity for epitaxial deposition
|
US7372077B2
(en)
*
|
2003-02-07 |
2008-05-13 |
Sanyo Electric Co., Ltd. |
Semiconductor device
|
US6987281B2
(en)
*
|
2003-02-13 |
2006-01-17 |
Cree, Inc. |
Group III nitride contact structures for light emitting devices
|
WO2004078417A1
(en)
*
|
2003-03-02 |
2004-09-16 |
Lee Denis Stewart |
Wrench improvment
|
US20040187092A1
(en)
*
|
2003-03-20 |
2004-09-23 |
Toshiba Tec Kabushiki Kaisha |
Apparatus and method for performing the management of devices
|
US20060276043A1
(en)
*
|
2003-03-21 |
2006-12-07 |
Johnson Mark A L |
Method and systems for single- or multi-period edge definition lithography
|
WO2004086579A1
(en)
*
|
2003-03-25 |
2004-10-07 |
Matsushita Electric Industrial Co., Ltd. |
Nitride semiconductor device and its manufacturing method
|
JP2004336040A
(en)
|
2003-04-30 |
2004-11-25 |
Osram Opto Semiconductors Gmbh |
Method of fabricating plurality of semiconductor chips and electronic semiconductor baseboard
|
KR100679737B1
(en)
*
|
2003-05-19 |
2007-02-07 |
도시바세라믹스가부시키가이샤 |
A method for manufacturing a silicon substrate having a distorted layer
|
JP3913194B2
(en)
*
|
2003-05-30 |
2007-05-09 |
シャープ株式会社 |
Nitride semiconductor light emitting device
|
US7122841B2
(en)
|
2003-06-04 |
2006-10-17 |
Kopin Corporation |
Bonding pad for gallium nitride-based light-emitting devices
|
US7153772B2
(en)
*
|
2003-06-12 |
2006-12-26 |
Asm International N.V. |
Methods of forming silicide films in semiconductor devices
|
US6921924B2
(en)
*
|
2003-06-18 |
2005-07-26 |
United Epitaxy Company, Ltd |
Semiconductor light-emitting device
|
JP4390640B2
(en)
*
|
2003-07-31 |
2009-12-24 |
シャープ株式会社 |
Nitride semiconductor laser device, nitride semiconductor light emitting device, nitride semiconductor wafer, and methods of manufacturing the same
|
JP4276020B2
(en)
*
|
2003-08-01 |
2009-06-10 |
豊田合成株式会社 |
Method for producing group III nitride compound semiconductor
|
WO2005060007A1
(en)
*
|
2003-08-05 |
2005-06-30 |
Nitronex Corporation |
Gallium nitride material transistors and methods associated with the same
|
JP2005101475A
(en)
*
|
2003-08-28 |
2005-04-14 |
Hitachi Cable Ltd |
Iii-v group nitride semiconductor substrate and method for manufacturing the same
|
FR2862474B1
(en)
*
|
2003-11-17 |
2006-03-03 |
Nortel Networks Ltd |
METHOD FOR PERFORMING A SECURITY CHECK OF DATA FLOWS EXCHANGED BETWEEN A MODULE AND A COMMUNICATION NETWORK, AND COMMUNICATION MODULE
|
US20050116243A1
(en)
*
|
2003-12-01 |
2005-06-02 |
Atsunori Mochida |
Semiconductor laser device and its manufacturing method
|
US20050145851A1
(en)
*
|
2003-12-17 |
2005-07-07 |
Nitronex Corporation |
Gallium nitride material structures including isolation regions and methods
|
US7071498B2
(en)
*
|
2003-12-17 |
2006-07-04 |
Nitronex Corporation |
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
|
KR100512580B1
(en)
*
|
2003-12-31 |
2005-09-06 |
엘지전자 주식회사 |
Method of growing nitride semiconductor thin film having small defects
|
JP4540347B2
(en)
*
|
2004-01-05 |
2010-09-08 |
シャープ株式会社 |
Nitride semiconductor laser device and manufacturing method thereof
|
US20050179042A1
(en)
*
|
2004-02-13 |
2005-08-18 |
Kopin Corporation |
Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
|
US20050179046A1
(en)
*
|
2004-02-13 |
2005-08-18 |
Kopin Corporation |
P-type electrodes in gallium nitride-based light-emitting devices
|
US8089093B2
(en)
*
|
2004-02-20 |
2012-01-03 |
Nichia Corporation |
Nitride semiconductor device including different concentrations of impurities
|
ATE418806T1
(en)
*
|
2004-04-02 |
2009-01-15 |
Nichia Corp |
NITRIDE SEMICONDUCTOR LASER DEVICE
|
US8035113B2
(en)
*
|
2004-04-15 |
2011-10-11 |
The Trustees Of Boston University |
Optical devices featuring textured semiconductor layers
|
US7777241B2
(en)
*
|
2004-04-15 |
2010-08-17 |
The Trustees Of Boston University |
Optical devices featuring textured semiconductor layers
|
CN100454597C
(en)
*
|
2004-04-27 |
2009-01-21 |
松下电器产业株式会社 |
Nitride semiconductor element and process for producing the same
|
JPWO2005108327A1
(en)
|
2004-05-06 |
2008-03-21 |
旭硝子株式会社 |
Multilayer dielectric manufacturing method
|
US7157297B2
(en)
*
|
2004-05-10 |
2007-01-02 |
Sharp Kabushiki Kaisha |
Method for fabrication of semiconductor device
|
US7504274B2
(en)
|
2004-05-10 |
2009-03-17 |
The Regents Of The University Of California |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
|
US20050274964A1
(en)
*
|
2004-05-29 |
2005-12-15 |
Ting-Kai Huang |
Light emitting diode structure
|
US7858996B2
(en)
*
|
2006-02-17 |
2010-12-28 |
The Regents Of The University Of California |
Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices
|
US7361938B2
(en)
|
2004-06-03 |
2008-04-22 |
Philips Lumileds Lighting Company Llc |
Luminescent ceramic for a light emitting device
|
US7575947B2
(en)
*
|
2005-09-09 |
2009-08-18 |
The Regents Of The University Of California |
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
|
US7956360B2
(en)
*
|
2004-06-03 |
2011-06-07 |
The Regents Of The University Of California |
Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
|
US20050274971A1
(en)
*
|
2004-06-10 |
2005-12-15 |
Pai-Hsiang Wang |
Light emitting diode and method of making the same
|
JP4651312B2
(en)
*
|
2004-06-10 |
2011-03-16 |
シャープ株式会社 |
Manufacturing method of semiconductor device
|
JP5014804B2
(en)
*
|
2004-06-11 |
2012-08-29 |
アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン |
Bulk single crystal gallium-containing nitride and its use
|
US7361946B2
(en)
*
|
2004-06-28 |
2008-04-22 |
Nitronex Corporation |
Semiconductor device-based sensors
|
US7339205B2
(en)
|
2004-06-28 |
2008-03-04 |
Nitronex Corporation |
Gallium nitride materials and methods associated with the same
|
US7687827B2
(en)
*
|
2004-07-07 |
2010-03-30 |
Nitronex Corporation |
III-nitride materials including low dislocation densities and methods associated with the same
|
JP4720125B2
(en)
|
2004-08-10 |
2011-07-13 |
日立電線株式会社 |
III-V nitride semiconductor substrate, method of manufacturing the same, and III-V nitride semiconductor
|
JP4517770B2
(en)
*
|
2004-08-18 |
2010-08-04 |
日亜化学工業株式会社 |
Nitride semiconductor device
|
US7633097B2
(en)
*
|
2004-09-23 |
2009-12-15 |
Philips Lumileds Lighting Company, Llc |
Growth of III-nitride light emitting devices on textured substrates
|
TWI254470B
(en)
*
|
2005-05-04 |
2006-05-01 |
Genesis Photonics Inc |
Gallium nitride-based semiconductor growing method
|
US20060214289A1
(en)
*
|
2004-10-28 |
2006-09-28 |
Nitronex Corporation |
Gallium nitride material-based monolithic microwave integrated circuits
|
JP2006135221A
(en)
*
|
2004-11-09 |
2006-05-25 |
Mitsubishi Electric Corp |
Semiconductor light emitting element
|
WO2006054543A1
(en)
*
|
2004-11-22 |
2006-05-26 |
Matsushita Electric Industrial Co., Ltd. |
Nitride compound semiconductor device and process for producing the same
|
PL371405A1
(en)
|
2004-11-26 |
2006-05-29 |
Ammono Sp.Z O.O. |
Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
|
US7247889B2
(en)
|
2004-12-03 |
2007-07-24 |
Nitronex Corporation |
III-nitride material structures including silicon substrates
|
JP4140606B2
(en)
*
|
2005-01-11 |
2008-08-27 |
ソニー株式会社 |
GaN-based semiconductor light emitting device manufacturing method
|
KR100631971B1
(en)
*
|
2005-02-28 |
2006-10-11 |
삼성전기주식회사 |
Nitride semiconductor light emitting device
|
JP5706601B2
(en)
*
|
2005-03-10 |
2015-04-22 |
ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア |
Flat semipolar gallium nitride growth technology
|
WO2006099211A2
(en)
*
|
2005-03-11 |
2006-09-21 |
Ponce Fernando A |
Solid state light emitting device
|
JP4818732B2
(en)
|
2005-03-18 |
2011-11-16 |
シャープ株式会社 |
Method of manufacturing nitride semiconductor device
|
JP3949157B2
(en)
*
|
2005-04-08 |
2007-07-25 |
三菱電線工業株式会社 |
Semiconductor device and manufacturing method thereof
|
US7365374B2
(en)
*
|
2005-05-03 |
2008-04-29 |
Nitronex Corporation |
Gallium nitride material structures including substrates and methods associated with the same
|
US8324660B2
(en)
|
2005-05-17 |
2012-12-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
|
US9153645B2
(en)
|
2005-05-17 |
2015-10-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
|
US20060267043A1
(en)
*
|
2005-05-27 |
2006-11-30 |
Emerson David T |
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
|
TWI377602B
(en)
*
|
2005-05-31 |
2012-11-21 |
Japan Science & Tech Agency |
Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)
|
TW200703463A
(en)
|
2005-05-31 |
2007-01-16 |
Univ California |
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
|
EP1900013A4
(en)
|
2005-06-01 |
2010-09-01 |
Univ California |
Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices
|
US7790484B2
(en)
*
|
2005-06-08 |
2010-09-07 |
Sharp Kabushiki Kaisha |
Method for manufacturing laser devices
|
US8168000B2
(en)
*
|
2005-06-15 |
2012-05-01 |
International Rectifier Corporation |
III-nitride semiconductor device fabrication
|
JP4907929B2
(en)
*
|
2005-06-27 |
2012-04-04 |
株式会社東芝 |
Field effect semiconductor device and method for manufacturing field effect semiconductor device
|
WO2007009035A2
(en)
*
|
2005-07-13 |
2007-01-18 |
The Regents Of The University Of California |
Lateral growth method for defect reduction of semipolar nitride films
|
CN100429796C
(en)
*
|
2005-07-26 |
2008-10-29 |
夏普株式会社 |
Semiconductor light-emitting device and method of manufacturing same
|
JP2007059873A
(en)
*
|
2005-07-26 |
2007-03-08 |
Sharp Corp |
Semiconductor light emitting device and its manufacturing method
|
KR100616415B1
(en)
*
|
2005-08-08 |
2006-08-29 |
서울옵토디바이스주식회사 |
Alternate current type light-emitting diode
|
JP4462249B2
(en)
*
|
2005-09-22 |
2010-05-12 |
ソニー株式会社 |
Light emitting diode manufacturing method, integrated light emitting diode manufacturing method, and nitride III-V compound semiconductor growth method
|
KR20080072833A
(en)
*
|
2005-10-04 |
2008-08-07 |
니트로넥스 코오포레이션 |
Gallium nitride material transistors and methods for wideband applications
|
US8614449B1
(en)
*
|
2005-10-11 |
2013-12-24 |
SemiLEDs Optoelectronics Co., Ltd. |
Protection for the epitaxial structure of metal devices
|
KR101111720B1
(en)
*
|
2005-10-12 |
2012-02-15 |
삼성엘이디 주식회사 |
Edge emitting semiconductor laser diode with dielectric layer on active layer
|
KR20070042594A
(en)
|
2005-10-19 |
2007-04-24 |
삼성코닝 주식회사 |
Single crystalline a-plane nitride semiconductor wafer having orientation flat
|
JP5140962B2
(en)
*
|
2005-10-28 |
2013-02-13 |
日亜化学工業株式会社 |
Manufacturing method of nitride semiconductor substrate
|
CN101506937A
(en)
*
|
2005-10-31 |
2009-08-12 |
波士顿大学理事会 |
Optical devices featuring textured semiconductor layers
|
TW200735418A
(en)
*
|
2005-11-22 |
2007-09-16 |
Rohm Co Ltd |
Nitride semiconductor device
|
US7566913B2
(en)
|
2005-12-02 |
2009-07-28 |
Nitronex Corporation |
Gallium nitride material devices including conductive regions and methods associated with the same
|
EP1969635B1
(en)
|
2005-12-02 |
2017-07-19 |
Infineon Technologies Americas Corp. |
Gallium nitride material devices and associated methods
|
PL1798781T3
(en)
*
|
2005-12-15 |
2010-03-31 |
Lg Electronics Inc |
LED having vertical structure and method for fabricating the same
|
CN101385145B
(en)
|
2006-01-05 |
2011-06-08 |
伊鲁米特克斯公司 |
Separate optical device for directing light from an LED
|
WO2007084782A2
(en)
|
2006-01-20 |
2007-07-26 |
The Regents Of The University Of California |
Method for improved growth of semipolar (al,in,ga,b)n
|
US7687293B2
(en)
*
|
2006-01-20 |
2010-03-30 |
The Regents Of The University Of California |
Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
|
US8193079B2
(en)
|
2006-02-10 |
2012-06-05 |
The Regents Of The University Of California |
Method for conductivity control of (Al,In,Ga,B)N
|
KR100931509B1
(en)
*
|
2006-03-06 |
2009-12-11 |
엘지이노텍 주식회사 |
Nitride semiconductor light emitting device and manufacturing method
|
KR100714629B1
(en)
*
|
2006-03-17 |
2007-05-07 |
삼성전기주식회사 |
Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
|
US7777250B2
(en)
|
2006-03-24 |
2010-08-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lattice-mismatched semiconductor structures and related methods for device fabrication
|
JP2007299846A
(en)
*
|
2006-04-28 |
2007-11-15 |
Sharp Corp |
Semiconductor light emitting element and manufacturing method thereof
|
US8278176B2
(en)
|
2006-06-07 |
2012-10-02 |
Asm America, Inc. |
Selective epitaxial formation of semiconductor films
|
TWI304278B
(en)
*
|
2006-06-16 |
2008-12-11 |
Ind Tech Res Inst |
Semiconductor emitting device substrate and method of fabricating the same
|
JP5076656B2
(en)
*
|
2006-06-19 |
2012-11-21 |
日亜化学工業株式会社 |
Nitride semiconductor laser device
|
US20070295951A1
(en)
*
|
2006-06-26 |
2007-12-27 |
Jen-Inn Chyi |
Light-emitting diode incorporating an array of light extracting spots
|
TW200805452A
(en)
*
|
2006-07-06 |
2008-01-16 |
Nat Univ Chung Hsing |
Method of making a low-defect-density epitaxial substrate and the product made therefrom
|
KR100773555B1
(en)
*
|
2006-07-21 |
2007-11-06 |
삼성전자주식회사 |
Semiconductor substrate having low defects and method of manufacturing the same
|
JP4884866B2
(en)
*
|
2006-07-25 |
2012-02-29 |
三菱電機株式会社 |
Manufacturing method of nitride semiconductor device
|
WO2008021451A2
(en)
*
|
2006-08-14 |
2008-02-21 |
Aktiv-Dry Llc |
Human-powered dry powder inhaler and dry powder inhaler compositions
|
TWI305006B
(en)
*
|
2006-08-31 |
2009-01-01 |
Ind Tech Res Inst |
Nitride semiconductor and method for forming the same
|
TWI309439B
(en)
*
|
2006-09-05 |
2009-05-01 |
Ind Tech Res Inst |
Nitride semiconductor and method for forming the same
|
EP2062290B1
(en)
*
|
2006-09-07 |
2019-08-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Defect reduction using aspect ratio trapping
|
JP2006339675A
(en)
*
|
2006-09-07 |
2006-12-14 |
Sharp Corp |
Nitride semiconductor laser element and semiconductor optical device
|
US7442599B2
(en)
*
|
2006-09-15 |
2008-10-28 |
Sharp Laboratories Of America, Inc. |
Silicon/germanium superlattice thermal sensor
|
US7875958B2
(en)
|
2006-09-27 |
2011-01-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
|
US7789531B2
(en)
|
2006-10-02 |
2010-09-07 |
Illumitex, Inc. |
LED system and method
|
US8502263B2
(en)
*
|
2006-10-19 |
2013-08-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Light-emitter-based devices with lattice-mismatched semiconductor structures
|
US8193020B2
(en)
|
2006-11-15 |
2012-06-05 |
The Regents Of The University Of California |
Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
|
JP2010509177A
(en)
|
2006-11-15 |
2010-03-25 |
ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア |
Method for heteroepitaxial growth of high quality N-plane GaN, InN and AlN and their alloys by metalorganic chemical vapor deposition
|
JP5306589B2
(en)
|
2006-11-17 |
2013-10-02 |
シャープ株式会社 |
Semiconductor light emitting device and manufacturing method thereof
|
KR101390425B1
(en)
|
2006-11-22 |
2014-05-19 |
소이텍 |
Temperature-controlled Purge gate valve for Chemical Vapor Deposition Chamber
|
US20090223441A1
(en)
*
|
2006-11-22 |
2009-09-10 |
Chantal Arena |
High volume delivery system for gallium trichloride
|
EP2066496B1
(en)
*
|
2006-11-22 |
2013-04-10 |
Soitec |
Equipment for high volume manufacture of group iii-v semiconductor materials
|
US9481944B2
(en)
|
2006-11-22 |
2016-11-01 |
Soitec |
Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
|
US8197597B2
(en)
*
|
2006-11-22 |
2012-06-12 |
Soitec |
Gallium trichloride injection scheme
|
JP4948134B2
(en)
*
|
2006-11-22 |
2012-06-06 |
シャープ株式会社 |
Nitride semiconductor light emitting device
|
US8382898B2
(en)
|
2006-11-22 |
2013-02-26 |
Soitec |
Methods for high volume manufacture of group III-V semiconductor materials
|
US9481943B2
(en)
|
2006-11-22 |
2016-11-01 |
Soitec |
Gallium trichloride injection scheme
|
ATE546570T1
(en)
|
2006-11-22 |
2012-03-15 |
Soitec Silicon On Insulator |
METHOD FOR EPITACTICAL DEPOSITION OF SINGLE CRYSTALLINE III-V SEMICONDUCTOR MATERIAL
|
JP4980701B2
(en)
*
|
2006-12-01 |
2012-07-18 |
住友電工デバイス・イノベーション株式会社 |
Manufacturing method of semiconductor device
|
TW200845135A
(en)
*
|
2006-12-12 |
2008-11-16 |
Univ California |
Crystal growth of M-plane and semi-polar planes of (Al, In, Ga, B)N on various substrates
|
JP5373402B2
(en)
*
|
2007-01-15 |
2013-12-18 |
スタンレー電気株式会社 |
Manufacturing method of ZnO-based semiconductor light emitting device
|
JP4546982B2
(en)
*
|
2007-02-23 |
2010-09-22 |
Okiセミコンダクタ株式会社 |
Manufacturing method of semiconductor device
|
US8299502B2
(en)
*
|
2007-03-16 |
2012-10-30 |
Sebastian Lourdudoss |
Semiconductor heterostructures and manufacturing therof
|
US8367548B2
(en)
*
|
2007-03-16 |
2013-02-05 |
Asm America, Inc. |
Stable silicide films and methods for making the same
|
WO2008124154A2
(en)
|
2007-04-09 |
2008-10-16 |
Amberwave Systems Corporation |
Photovoltaics on silicon
|
US8237151B2
(en)
|
2009-01-09 |
2012-08-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Diode-based devices and methods for making the same
|
US7825328B2
(en)
|
2007-04-09 |
2010-11-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Nitride-based multi-junction solar cell modules and methods for making the same
|
US8304805B2
(en)
|
2009-01-09 |
2012-11-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
|
US20080272377A1
(en)
*
|
2007-05-02 |
2008-11-06 |
Sumitomo Electric Industries, Ltd. |
Gallium Nitride Substrate and Gallium Nitride Film Deposition Method
|
US8329541B2
(en)
|
2007-06-15 |
2012-12-11 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
InP-based transistor fabrication
|
JP2009023853A
(en)
*
|
2007-07-17 |
2009-02-05 |
Hitachi Cable Ltd |
Group iii-v nitride semiconductor substrate, method for manufacturing the same, and group iii-v nitride semiconductor device
|
KR101355593B1
(en)
*
|
2007-07-26 |
2014-01-24 |
아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티 |
Methods for producing improved epitaxial materials
|
KR101374090B1
(en)
*
|
2007-07-26 |
2014-03-17 |
아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티 |
Epitaxial methods and templates grown by the methods
|
US7745848B1
(en)
|
2007-08-15 |
2010-06-29 |
Nitronex Corporation |
Gallium nitride material devices and thermal designs thereof
|
US8344242B2
(en)
|
2007-09-07 |
2013-01-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Multi-junction solar cells
|
JP4810517B2
(en)
*
|
2007-09-10 |
2011-11-09 |
日本電気株式会社 |
Group III-V nitride semiconductor substrate
|
US7759199B2
(en)
|
2007-09-19 |
2010-07-20 |
Asm America, Inc. |
Stressor for engineered strain on channel
|
CA2641016A1
(en)
|
2007-10-24 |
2009-04-24 |
Sumitomo Electric Industries, Ltd. |
Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
|
TW200921943A
(en)
*
|
2007-11-14 |
2009-05-16 |
Univ Nat Central |
Light emitting diode and light source composed of light emitting diode array
|
KR100972977B1
(en)
*
|
2007-12-14 |
2010-07-29 |
삼성엘이디 주식회사 |
Growing method of semi-polar nitride single crystal thin film and manufactuing method of nitride semiconductor light emitting devide
|
WO2009081762A1
(en)
*
|
2007-12-21 |
2009-07-02 |
Sanyo Electric Co., Ltd. |
Nitride semiconductor light emitting diode, nitride semiconductor laser element, methods for manufacturing such diode and element, and method for forming nitride semiconductor layer
|
JP4935700B2
(en)
*
|
2008-02-01 |
2012-05-23 |
豊田合成株式会社 |
Group III nitride compound semiconductor manufacturing method, wafer, group III nitride compound semiconductor device
|
US8026581B2
(en)
*
|
2008-02-05 |
2011-09-27 |
International Rectifier Corporation |
Gallium nitride material devices including diamond regions and methods associated with the same
|
JP2011512037A
(en)
|
2008-02-08 |
2011-04-14 |
イルミテックス, インコーポレイテッド |
System and method for emitter layer shaping
|
US8592800B2
(en)
*
|
2008-03-07 |
2013-11-26 |
Trustees Of Boston University |
Optical devices featuring nonpolar textured semiconductor layers
|
JPWO2009118979A1
(en)
*
|
2008-03-28 |
2011-07-21 |
パナソニック株式会社 |
Nitride semiconductor light emitting device
|
US8343824B2
(en)
*
|
2008-04-29 |
2013-01-01 |
International Rectifier Corporation |
Gallium nitride material processing and related device structures
|
US8183667B2
(en)
|
2008-06-03 |
2012-05-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Epitaxial growth of crystalline material
|
KR101101133B1
(en)
*
|
2008-06-03 |
2012-01-05 |
삼성엘이디 주식회사 |
Growth method of nitride single crystal and manufacturing method of nitride semicondutor light emitting device
|
WO2009152503A2
(en)
*
|
2008-06-13 |
2009-12-17 |
James Edgar |
Methods for epitaxial growth of low defect materials
|
US8823014B2
(en)
*
|
2008-06-13 |
2014-09-02 |
Kansas State University Research Foundation |
Off-axis silicon carbide substrates
|
US8847249B2
(en)
*
|
2008-06-16 |
2014-09-30 |
Soraa, Inc. |
Solid-state optical device having enhanced indium content in active regions
|
US8274097B2
(en)
|
2008-07-01 |
2012-09-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reduction of edge effects from aspect ratio trapping
|
US8143148B1
(en)
|
2008-07-14 |
2012-03-27 |
Soraa, Inc. |
Self-aligned multi-dielectric-layer lift off process for laser diode stripes
|
US8259769B1
(en)
|
2008-07-14 |
2012-09-04 |
Soraa, Inc. |
Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
|
US8805134B1
(en)
|
2012-02-17 |
2014-08-12 |
Soraa Laser Diode, Inc. |
Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
|
US8981427B2
(en)
|
2008-07-15 |
2015-03-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Polishing of small composite semiconductor materials
|
US8673074B2
(en)
*
|
2008-07-16 |
2014-03-18 |
Ostendo Technologies, Inc. |
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
|
KR101534848B1
(en)
*
|
2008-07-21 |
2015-07-27 |
엘지이노텍 주식회사 |
Light emitting diode and method for fabricating the light emitting diode, and light emitting device and method for fabricating light emitting devcie
|
KR100956499B1
(en)
*
|
2008-08-01 |
2010-05-07 |
주식회사 실트론 |
Compound semiconductor substrate having metal layer, method for manufacturing the same, and compound semiconductor device using the same
|
US8124996B2
(en)
|
2008-08-04 |
2012-02-28 |
Soraa, Inc. |
White light devices using non-polar or semipolar gallium containing materials and phosphors
|
US8284810B1
(en)
|
2008-08-04 |
2012-10-09 |
Soraa, Inc. |
Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
|
TWI425558B
(en)
|
2008-08-11 |
2014-02-01 |
Taiwan Semiconductor Mfg |
Method of forming a circuit structure
|
US8803189B2
(en)
*
|
2008-08-11 |
2014-08-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
III-V compound semiconductor epitaxy using lateral overgrowth
|
WO2010033813A2
(en)
|
2008-09-19 |
2010-03-25 |
Amberwave System Corporation |
Formation of devices by epitaxial layer overgrowth
|
US20100072515A1
(en)
|
2008-09-19 |
2010-03-25 |
Amberwave Systems Corporation |
Fabrication and structures of crystalline material
|
US8253211B2
(en)
|
2008-09-24 |
2012-08-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor sensor structures with reduced dislocation defect densities
|
JP5906445B2
(en)
*
|
2008-12-10 |
2016-04-20 |
パナソニックIpマネジメント株式会社 |
Semiconductor laser device and manufacturing method thereof
|
TW201034256A
(en)
|
2008-12-11 |
2010-09-16 |
Illumitex Inc |
Systems and methods for packaging light-emitting diode devices
|
JP5180050B2
(en)
*
|
2008-12-17 |
2013-04-10 |
スタンレー電気株式会社 |
Manufacturing method of semiconductor device
|
KR101521259B1
(en)
*
|
2008-12-23 |
2015-05-18 |
삼성전자주식회사 |
Nitride semiconductor light emitting device and manufacturing method thereof
|
US20100187568A1
(en)
*
|
2009-01-28 |
2010-07-29 |
S.O.I.Tec Silicon On Insulator Technologies, S.A. |
Epitaxial methods and structures for forming semiconductor materials
|
TWI398908B
(en)
*
|
2009-02-27 |
2013-06-11 |
Lextar Electronics Corp |
Method for forming semiconductor layer
|
KR101064006B1
(en)
*
|
2009-03-03 |
2011-09-08 |
엘지이노텍 주식회사 |
Light emitting element
|
WO2010112540A1
(en)
|
2009-03-31 |
2010-10-07 |
S.O.I.Tec Silicon On Insulator Technologies |
Epitaxial methods and structures for reducing surface dislocation density in semiconductor materials
|
US8178427B2
(en)
*
|
2009-03-31 |
2012-05-15 |
Commissariat A. L'energie Atomique |
Epitaxial methods for reducing surface dislocation density in semiconductor materials
|
SG171987A1
(en)
|
2009-04-02 |
2011-07-28 |
Taiwan Semiconductor Mfg |
Devices formed from a non-polar plane of a crystalline material and method of making the same
|
US8254425B1
(en)
|
2009-04-17 |
2012-08-28 |
Soraa, Inc. |
Optical device structure using GaN substrates and growth structures for laser applications
|
US8242522B1
(en)
|
2009-05-12 |
2012-08-14 |
Soraa, Inc. |
Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
|
US8294179B1
(en)
|
2009-04-17 |
2012-10-23 |
Soraa, Inc. |
Optical device structure using GaN substrates and growth structures for laser applications
|
US8634442B1
(en)
|
2009-04-13 |
2014-01-21 |
Soraa Laser Diode, Inc. |
Optical device structure using GaN substrates for laser applications
|
DE112010001615T5
(en)
|
2009-04-13 |
2012-08-02 |
Soraa, Inc. |
Structure of an optical element using GaN substrates for laser applications
|
US8837545B2
(en)
|
2009-04-13 |
2014-09-16 |
Soraa Laser Diode, Inc. |
Optical device structure using GaN substrates and growth structures for laser applications
|
US8416825B1
(en)
|
2009-04-17 |
2013-04-09 |
Soraa, Inc. |
Optical device structure using GaN substrates and growth structure for laser applications
|
US8509275B1
(en)
|
2009-05-29 |
2013-08-13 |
Soraa, Inc. |
Gallium nitride based laser dazzling device and method
|
US9250044B1
(en)
|
2009-05-29 |
2016-02-02 |
Soraa Laser Diode, Inc. |
Gallium and nitrogen containing laser diode dazzling devices and methods of use
|
US9829780B2
(en)
|
2009-05-29 |
2017-11-28 |
Soraa Laser Diode, Inc. |
Laser light source for a vehicle
|
US8247887B1
(en)
|
2009-05-29 |
2012-08-21 |
Soraa, Inc. |
Method and surface morphology of non-polar gallium nitride containing substrates
|
US10108079B2
(en)
|
2009-05-29 |
2018-10-23 |
Soraa Laser Diode, Inc. |
Laser light source for a vehicle
|
US9800017B1
(en)
|
2009-05-29 |
2017-10-24 |
Soraa Laser Diode, Inc. |
Laser device and method for a vehicle
|
US8427590B2
(en)
|
2009-05-29 |
2013-04-23 |
Soraa, Inc. |
Laser based display method and system
|
WO2010140564A1
(en)
*
|
2009-06-01 |
2010-12-09 |
三菱化学株式会社 |
Nitride semiconductor crystal and method for manufacturing same
|
TWI471913B
(en)
*
|
2009-07-02 |
2015-02-01 |
Global Wafers Co Ltd |
Production method of gallium nitride based compound semiconductor
|
US8585253B2
(en)
|
2009-08-20 |
2013-11-19 |
Illumitex, Inc. |
System and method for color mixing lens array
|
US8449128B2
(en)
|
2009-08-20 |
2013-05-28 |
Illumitex, Inc. |
System and method for a lens and phosphor layer
|
KR101173072B1
(en)
|
2009-08-27 |
2012-08-13 |
한국산업기술대학교산학협력단 |
High Quality Non-polar/Semi-polar Semiconductor Device on Tilted Substrate and Manufacturing Method thereof
|
US8314429B1
(en)
|
2009-09-14 |
2012-11-20 |
Soraa, Inc. |
Multi color active regions for white light emitting diode
|
US8355418B2
(en)
|
2009-09-17 |
2013-01-15 |
Soraa, Inc. |
Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
|
US8750342B1
(en)
|
2011-09-09 |
2014-06-10 |
Soraa Laser Diode, Inc. |
Laser diodes with scribe structures
|
US9293644B2
(en)
|
2009-09-18 |
2016-03-22 |
Soraa, Inc. |
Power light emitting diode and method with uniform current density operation
|
US8933644B2
(en)
|
2009-09-18 |
2015-01-13 |
Soraa, Inc. |
LED lamps with improved quality of light
|
US8502465B2
(en)
|
2009-09-18 |
2013-08-06 |
Soraa, Inc. |
Power light emitting diode and method with current density operation
|
US9583678B2
(en)
|
2009-09-18 |
2017-02-28 |
Soraa, Inc. |
High-performance LED fabrication
|
US8629065B2
(en)
*
|
2009-11-06 |
2014-01-14 |
Ostendo Technologies, Inc. |
Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
|
US8367528B2
(en)
|
2009-11-17 |
2013-02-05 |
Asm America, Inc. |
Cyclical epitaxial deposition and etch
|
US8222052B2
(en)
*
|
2009-12-01 |
2012-07-17 |
The United States Of America As Represented By The Secretary Of The Army |
Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis
|
US8604461B2
(en)
|
2009-12-16 |
2013-12-10 |
Cree, Inc. |
Semiconductor device structures with modulated doping and related methods
|
US8536615B1
(en)
|
2009-12-16 |
2013-09-17 |
Cree, Inc. |
Semiconductor device structures with modulated and delta doping and related methods
|
US8575592B2
(en)
*
|
2010-02-03 |
2013-11-05 |
Cree, Inc. |
Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
|
US10147850B1
(en)
|
2010-02-03 |
2018-12-04 |
Soraa, Inc. |
System and method for providing color light sources in proximity to predetermined wavelength conversion structures
|
US8905588B2
(en)
|
2010-02-03 |
2014-12-09 |
Sorra, Inc. |
System and method for providing color light sources in proximity to predetermined wavelength conversion structures
|
US9927611B2
(en)
|
2010-03-29 |
2018-03-27 |
Soraa Laser Diode, Inc. |
Wearable laser based display method and system
|
US8451876B1
(en)
|
2010-05-17 |
2013-05-28 |
Soraa, Inc. |
Method and system for providing bidirectional light sources with broad spectrum
|
US20110301892A1
(en)
*
|
2010-06-03 |
2011-12-08 |
Emil Kamieniecki |
System and method for characterizing the electrical properties of a semiconductor sample
|
US8501597B2
(en)
*
|
2010-07-30 |
2013-08-06 |
Academia Sinica |
Method for fabricating group III-nitride semiconductor
|
CN101931039B
(en)
*
|
2010-08-23 |
2012-07-25 |
安徽三安光电有限公司 |
Gallium nitride based light emitting diode with double-layer staggered perforated holes and manufacturing process thereof
|
US8133806B1
(en)
|
2010-09-30 |
2012-03-13 |
S.O.I.Tec Silicon On Insulator Technologies |
Systems and methods for forming semiconductor materials by atomic layer deposition
|
US8486192B2
(en)
|
2010-09-30 |
2013-07-16 |
Soitec |
Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
|
US8816319B1
(en)
|
2010-11-05 |
2014-08-26 |
Soraa Laser Diode, Inc. |
Method of strain engineering and related optical device using a gallium and nitrogen containing active region
|
KR101105868B1
(en)
*
|
2010-11-08 |
2012-01-16 |
한국광기술원 |
Method for preparing group iii-nitride substrate using chemical lift off
|
US9048170B2
(en)
|
2010-11-09 |
2015-06-02 |
Soraa Laser Diode, Inc. |
Method of fabricating optical devices using laser treatment
|
US8975615B2
(en)
|
2010-11-09 |
2015-03-10 |
Soraa Laser Diode, Inc. |
Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
|
US8110484B1
(en)
|
2010-11-19 |
2012-02-07 |
Sumitomo Electric Industries, Ltd. |
Conductive nitride semiconductor substrate and method for producing the same
|
US9024310B2
(en)
*
|
2011-01-12 |
2015-05-05 |
Tsinghua University |
Epitaxial structure
|
US9318875B1
(en)
|
2011-01-24 |
2016-04-19 |
Soraa Laser Diode, Inc. |
Color converting element for laser diode
|
US9025635B2
(en)
|
2011-01-24 |
2015-05-05 |
Soraa Laser Diode, Inc. |
Laser package having multiple emitters configured on a support member
|
US9595813B2
(en)
|
2011-01-24 |
2017-03-14 |
Soraa Laser Diode, Inc. |
Laser package having multiple emitters configured on a substrate member
|
US9093820B1
(en)
|
2011-01-25 |
2015-07-28 |
Soraa Laser Diode, Inc. |
Method and structure for laser devices using optical blocking regions
|
GB2488587B
(en)
*
|
2011-03-03 |
2015-07-29 |
Seren Photonics Ltd |
Semiconductor devices and fabrication methods
|
US9236530B2
(en)
|
2011-04-01 |
2016-01-12 |
Soraa, Inc. |
Miscut bulk substrates
|
US9287684B2
(en)
|
2011-04-04 |
2016-03-15 |
Soraa Laser Diode, Inc. |
Laser package having multiple emitters with color wheel
|
US8809170B2
(en)
|
2011-05-19 |
2014-08-19 |
Asm America Inc. |
High throughput cyclical epitaxial deposition and etch process
|
JP5649514B2
(en)
|
2011-05-24 |
2015-01-07 |
株式会社東芝 |
Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer
|
US9646827B1
(en)
|
2011-08-23 |
2017-05-09 |
Soraa, Inc. |
Method for smoothing surface of a substrate containing gallium and nitrogen
|
US9093395B2
(en)
*
|
2011-09-02 |
2015-07-28 |
Avogy, Inc. |
Method and system for local control of defect density in gallium nitride based electronics
|
JP5813448B2
(en)
*
|
2011-10-07 |
2015-11-17 |
シャープ株式会社 |
Method of manufacturing nitride semiconductor device
|
US9691939B2
(en)
|
2011-10-10 |
2017-06-27 |
Sensor Electronic Technology, Inc. |
Patterned layer design for group III nitride layer growth
|
US10153396B2
(en)
|
2011-10-10 |
2018-12-11 |
Sensor Electronic Technology, Inc. |
Patterned layer design for group III nitride layer growth
|
US9806228B2
(en)
|
2011-10-10 |
2017-10-31 |
Sensor Electronic Technology, Inc. |
Patterned layer design for group III nitride layer growth
|
US9397260B2
(en)
|
2011-10-10 |
2016-07-19 |
Sensor Electronic Technology, Inc. |
Patterned layer design for group III nitride layer growth
|
US10622515B2
(en)
*
|
2011-10-10 |
2020-04-14 |
Sensor Electronic Technology, Inc. |
Patterned layer design for group III nitride layer growth
|
US8971370B1
(en)
|
2011-10-13 |
2015-03-03 |
Soraa Laser Diode, Inc. |
Laser devices using a semipolar plane
|
JP2013145867A
(en)
*
|
2011-12-15 |
2013-07-25 |
Hitachi Cable Ltd |
Nitride semiconductor template, and light-emitting diode
|
US9020003B1
(en)
|
2012-03-14 |
2015-04-28 |
Soraa Laser Diode, Inc. |
Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
|
CN103367122B
(en)
*
|
2012-03-28 |
2016-03-30 |
清华大学 |
The preparation method of epitaxial structure
|
US9343871B1
(en)
|
2012-04-05 |
2016-05-17 |
Soraa Laser Diode, Inc. |
Facet on a gallium and nitrogen containing laser diode
|
US10559939B1
(en)
|
2012-04-05 |
2020-02-11 |
Soraa Laser Diode, Inc. |
Facet on a gallium and nitrogen containing laser diode
|
US9800016B1
(en)
|
2012-04-05 |
2017-10-24 |
Soraa Laser Diode, Inc. |
Facet on a gallium and nitrogen containing laser diode
|
US8748297B2
(en)
|
2012-04-20 |
2014-06-10 |
Infineon Technologies Ag |
Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material
|
CN103374751B
(en)
*
|
2012-04-25 |
2016-06-15 |
清华大学 |
The preparation method with the epitaxial structure of micro-structure
|
DE102012107001A1
(en)
*
|
2012-07-31 |
2014-02-06 |
Osram Opto Semiconductors Gmbh |
Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
|
US8971368B1
(en)
|
2012-08-16 |
2015-03-03 |
Soraa Laser Diode, Inc. |
Laser devices having a gallium and nitrogen containing semipolar surface orientation
|
JP5881560B2
(en)
*
|
2012-08-30 |
2016-03-09 |
株式会社東芝 |
Semiconductor light emitting device and manufacturing method thereof
|
US9812993B2
(en)
*
|
2012-09-21 |
2017-11-07 |
Georgia Tech Research Corporation |
Single electrode triboelectric generator
|
CN103811592A
(en)
*
|
2012-11-12 |
2014-05-21 |
展晶科技(深圳)有限公司 |
Light emitting diode manufacturing method
|
EP2743966B1
(en)
*
|
2012-12-14 |
2020-11-25 |
Seoul Viosys Co., Ltd. |
Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
|
JP6029538B2
(en)
*
|
2013-05-31 |
2016-11-24 |
サンケン電気株式会社 |
Semiconductor device
|
US9166372B1
(en)
|
2013-06-28 |
2015-10-20 |
Soraa Laser Diode, Inc. |
Gallium nitride containing laser device configured on a patterned substrate
|
CN103388178B
(en)
*
|
2013-08-07 |
2016-12-28 |
厦门市三安光电科技有限公司 |
Group III-nitride epitaxial structure and growing method thereof
|
WO2015025631A1
(en)
*
|
2013-08-21 |
2015-02-26 |
シャープ株式会社 |
Nitride semiconductor light-emitting element
|
US9520695B2
(en)
|
2013-10-18 |
2016-12-13 |
Soraa Laser Diode, Inc. |
Gallium and nitrogen containing laser device having confinement region
|
US9368939B2
(en)
|
2013-10-18 |
2016-06-14 |
Soraa Laser Diode, Inc. |
Manufacturable laser diode formed on C-plane gallium and nitrogen material
|
US9362715B2
(en)
|
2014-02-10 |
2016-06-07 |
Soraa Laser Diode, Inc |
Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
|
US9379525B2
(en)
|
2014-02-10 |
2016-06-28 |
Soraa Laser Diode, Inc. |
Manufacturable laser diode
|
CN104638068B
(en)
*
|
2013-11-07 |
2018-08-24 |
上海蓝光科技有限公司 |
A kind of substrat structure and preparation method thereof being used for the growth of III-V group-III nitride
|
US9406564B2
(en)
*
|
2013-11-21 |
2016-08-02 |
Infineon Technologies Ag |
Singulation through a masking structure surrounding expitaxial regions
|
US9209596B1
(en)
|
2014-02-07 |
2015-12-08 |
Soraa Laser Diode, Inc. |
Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
|
US9520697B2
(en)
|
2014-02-10 |
2016-12-13 |
Soraa Laser Diode, Inc. |
Manufacturable multi-emitter laser diode
|
US9871350B2
(en)
|
2014-02-10 |
2018-01-16 |
Soraa Laser Diode, Inc. |
Manufacturable RGB laser diode source
|
WO2015163908A1
(en)
*
|
2014-04-25 |
2015-10-29 |
The Texas State University-San Marcos |
Material selective regrowth structure and method
|
EP3149781B1
(en)
*
|
2014-05-30 |
2020-09-30 |
Lumileds Holding B.V. |
Light-emitting device with patterned substrate
|
JP6211999B2
(en)
*
|
2014-06-25 |
2017-10-11 |
株式会社東芝 |
Nitride semiconductor layer, nitride semiconductor device, and method of manufacturing nitride semiconductor layer
|
US9564736B1
(en)
|
2014-06-26 |
2017-02-07 |
Soraa Laser Diode, Inc. |
Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
|
DE102014109335A1
(en)
*
|
2014-07-03 |
2016-01-07 |
Aixtron Se |
Process for depositing columnar structures
|
US9246311B1
(en)
|
2014-11-06 |
2016-01-26 |
Soraa Laser Diode, Inc. |
Method of manufacture for an ultraviolet laser diode
|
DE102014116999A1
(en)
*
|
2014-11-20 |
2016-05-25 |
Osram Opto Semiconductors Gmbh |
Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
|
US9666677B1
(en)
|
2014-12-23 |
2017-05-30 |
Soraa Laser Diode, Inc. |
Manufacturable thin film gallium and nitrogen containing devices
|
US9653642B1
(en)
|
2014-12-23 |
2017-05-16 |
Soraa Laser Diode, Inc. |
Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
|
CN107407006B
(en)
*
|
2015-03-26 |
2020-09-01 |
京瓷株式会社 |
Sapphire member and method for manufacturing sapphire member
|
DE102015109761B4
(en)
|
2015-06-18 |
2022-01-27 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Method of manufacturing a nitride semiconductor device and nitride semiconductor device
|
US10879673B2
(en)
|
2015-08-19 |
2020-12-29 |
Soraa Laser Diode, Inc. |
Integrated white light source using a laser diode and a phosphor in a surface mount device package
|
US11437774B2
(en)
|
2015-08-19 |
2022-09-06 |
Kyocera Sld Laser, Inc. |
High-luminous flux laser-based white light source
|
US10938182B2
(en)
|
2015-08-19 |
2021-03-02 |
Soraa Laser Diode, Inc. |
Specialized integrated light source using a laser diode
|
US11437775B2
(en)
|
2015-08-19 |
2022-09-06 |
Kyocera Sld Laser, Inc. |
Integrated light source using a laser diode
|
JP6582738B2
(en)
*
|
2015-08-26 |
2019-10-02 |
日亜化学工業株式会社 |
Light emitting element and light emitting device
|
US9673281B2
(en)
|
2015-09-08 |
2017-06-06 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
|
US9773898B2
(en)
|
2015-09-08 |
2017-09-26 |
Macom Technology Solutions Holdings, Inc. |
III-nitride semiconductor structures comprising spatially patterned implanted species
|
US10211294B2
(en)
|
2015-09-08 |
2019-02-19 |
Macom Technology Solutions Holdings, Inc. |
III-nitride semiconductor structures comprising low atomic mass species
|
US9627473B2
(en)
|
2015-09-08 |
2017-04-18 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation in III-nitride material semiconductor structures
|
US20170069721A1
(en)
|
2015-09-08 |
2017-03-09 |
M/A-Com Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using silicon carbide diffusion barrier regions
|
US9704705B2
(en)
|
2015-09-08 |
2017-07-11 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation via reaction with active species
|
US9799520B2
(en)
|
2015-09-08 |
2017-10-24 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation via back side implantation
|
US9806182B2
(en)
|
2015-09-08 |
2017-10-31 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using elemental diboride diffusion barrier regions
|
WO2017060836A1
(en)
*
|
2015-10-05 |
2017-04-13 |
King Abdullah University Of Science And Technology |
An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof
|
US9787963B2
(en)
|
2015-10-08 |
2017-10-10 |
Soraa Laser Diode, Inc. |
Laser lighting having selective resolution
|
US9960127B2
(en)
|
2016-05-18 |
2018-05-01 |
Macom Technology Solutions Holdings, Inc. |
High-power amplifier package
|
JP7156027B2
(en)
*
|
2016-08-08 |
2022-10-19 |
三菱ケミカル株式会社 |
Conductive C-plane GaN substrate
|
US10134658B2
(en)
|
2016-08-10 |
2018-11-20 |
Macom Technology Solutions Holdings, Inc. |
High power transistors
|
TWI646228B
(en)
*
|
2017-08-10 |
2019-01-01 |
新唐科技股份有限公司 |
Semiconductor substrate and method of manufacturing same
|
US10771155B2
(en)
|
2017-09-28 |
2020-09-08 |
Soraa Laser Diode, Inc. |
Intelligent visible light with a gallium and nitrogen containing laser source
|
US10892159B2
(en)
|
2017-11-20 |
2021-01-12 |
Saphlux, Inc. |
Semipolar or nonpolar group III-nitride substrates
|
US10222474B1
(en)
|
2017-12-13 |
2019-03-05 |
Soraa Laser Diode, Inc. |
Lidar systems including a gallium and nitrogen containing laser light source
|
US10551728B1
(en)
|
2018-04-10 |
2020-02-04 |
Soraa Laser Diode, Inc. |
Structured phosphors for dynamic lighting
|
JP7089176B2
(en)
*
|
2018-06-26 |
2022-06-22 |
日亜化学工業株式会社 |
Method of forming aluminum nitride film
|
US11038023B2
(en)
|
2018-07-19 |
2021-06-15 |
Macom Technology Solutions Holdings, Inc. |
III-nitride material semiconductor structures on conductive silicon substrates
|
JP6595677B1
(en)
*
|
2018-08-29 |
2019-10-23 |
株式会社サイオクス |
Nitride semiconductor substrate manufacturing method, nitride semiconductor substrate, and laminated structure
|
CN109360786B
(en)
*
|
2018-09-29 |
2021-08-10 |
扬州乾照光电有限公司 |
Lateral epitaxial growth method and semiconductor structure
|
US11239637B2
(en)
|
2018-12-21 |
2022-02-01 |
Kyocera Sld Laser, Inc. |
Fiber delivered laser induced white light system
|
US11421843B2
(en)
|
2018-12-21 |
2022-08-23 |
Kyocera Sld Laser, Inc. |
Fiber-delivered laser-induced dynamic light system
|
CN109585617A
(en)
*
|
2018-12-28 |
2019-04-05 |
华灿光电(浙江)有限公司 |
A kind of method and substrate of selectively transfer semiconductor devices
|
US11884202B2
(en)
|
2019-01-18 |
2024-01-30 |
Kyocera Sld Laser, Inc. |
Laser-based fiber-coupled white light system
|
US11228158B2
(en)
|
2019-05-14 |
2022-01-18 |
Kyocera Sld Laser, Inc. |
Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
|
US10903623B2
(en)
|
2019-05-14 |
2021-01-26 |
Soraa Laser Diode, Inc. |
Method and structure for manufacturable large area gallium and nitrogen containing substrate
|
CN112301422A
(en)
*
|
2019-08-01 |
2021-02-02 |
北京飓芯科技有限公司 |
Substrate stripping method based on laminated mask substrate
|
CN112301325A
(en)
*
|
2019-08-01 |
2021-02-02 |
北京飓芯科技有限公司 |
3D laminated mask substrate structure and preparation method and epitaxial growth method thereof
|
WO2021237528A1
(en)
*
|
2020-05-27 |
2021-12-02 |
苏州晶湛半导体有限公司 |
Group iii nitride structure and preparation method therefor
|
WO2021253284A1
(en)
*
|
2020-06-17 |
2021-12-23 |
华为技术有限公司 |
Epitaxial wafer, led chip, and display screen
|