CA2346294A1 - Solid-state photoelectric device - Google Patents

Solid-state photoelectric device Download PDF

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Publication number
CA2346294A1
CA2346294A1 CA002346294A CA2346294A CA2346294A1 CA 2346294 A1 CA2346294 A1 CA 2346294A1 CA 002346294 A CA002346294 A CA 002346294A CA 2346294 A CA2346294 A CA 2346294A CA 2346294 A1 CA2346294 A1 CA 2346294A1
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CA
Canada
Prior art keywords
photoelectric device
electrode
photoactive
channel layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002346294A
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French (fr)
Other versions
CA2346294C (en
Inventor
Joshua S. Salafsky
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Columbia University of New York
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Individual
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Filing date
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Publication of CA2346294A1 publication Critical patent/CA2346294A1/en
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Publication of CA2346294C publication Critical patent/CA2346294C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a hole carrier. Within the first material are nanoparticles of a second material which operate as electron carriers. The nanoparticles are distributed within the photoactive channel layer such that, predominantly, the charge path between the two electrodes at any given location includes only a single nanocrystal. Because a majority of electrons are channeled to the electrodes via single nanocrystal conductive paths, the resulting architecture is referred to as a channel architecture.

Claims (25)

1. A photoelectric device comprising a substrate;
a first electrode formed on said substrate;
a photoactive channel layer; and a second electrode; said photoactive channel layer being interposed between said first and second electrodes.
2. The photoelectric device according to Claim 1 wherein said photoactive channel layer includes a conjugated polymer material and a semiconductor particulate material.
3. The photoelectric device according to Claim 2 wherein the semiconductor particulate material includes nanoparticles having an average diameter and wherein the conjugated polymer material has a thickness in the range of one to two times the average diameter of the nanoparticles.
4. The photoelectric device according to Claim 3 wherein said polymer is poly(p-phenylene vinylene).
5. The photoelectric device according to Claim 4 wherein the nanoparticles are titanium dioxide.
6. The photoelectric device according to Claim 1 wherein the photoactive layer includes a dyestuff material.
7. The photoelectric device according to Claim 1 wherein said substrate and said first electrode are formed from a material which transmits at least a portion of incident light to said photoactive channel layer.
8. The photoelectric device according to Claim 7 wherein the substrate material is glass.
9. The photoelectric device according to Claim 7 wherein the first electrode material is a transparent conducting oxide.
10. The photoelectric device according to Claim 1 wherein the second electrode is formed from a material which transmits at least a portion of incident light to said photoactive channel layer.
11. The photoelectric device according to Claim 10 wherein the second electrode material is a transparent conducting oxide.
12. The photoelectric device according to Claim 1 wherein the substrate, first electrode, second electrode and photoactive channel layer are formed from mechanically flexible materials.
13. A photoelectric device comprising a substrate;
a first electrode formed on said substrate;
a first photoactive channel layer;
a second electrode, said first photoactive channel layer being interposed between said first and second electrodes;
an electrical insulating layer, said insulating layer being formed on said second electrode;
a third electrode disposed over said insulating layer;
a second photoactive channel layer; and a fourth electrode, said second photoactive channel layer being interposed between said third and fourth electrodes.
14. The photoelectric device according to Claim 13 wherein at least one of said first and second photoactive channel layers includes a conjugated polymer material and a semiconductor particulate material.
15. The photoelectric device according to Claim 14 wherein the semiconductor particulate material includes nanoparticles having an average diameter and wherein the conjugated polymer material has a thickness in the range of one to two times the average diameter of the nanoparticles.
16. The photoelectric device according to Claim 15 wherein said first photoactive channel layer is responsive to incident light in a first spectral range and said second photoactive channel layer is responsive to incident light in a second spectral range.
17. The photoelectric device according to Claim 16 wherein the nanoparticles in at least one of said first and second channel layers are titanium dioxide.
18. The photoelectric device according to Claim 17 wherein the polymer material of one of said first and second photoactive channel layers is PPV and the other of said first and second photoactive channel layers is MEH-PPV.
19. The photoelectric device according to Claim 13 wherein at least one of the photoactive layer includes a dyestuff material.
20. The photoelectric device according to Claim 13 wherein said substrate, said first electrode, said first photoactive channel layer, said second electrode and said insulating layer are formed from materials which transmit at least a portion of incident light to said second photoactive channel layer.
21. The photoelectric device according to Claim 20 wherein the substrate material is glass.
22. The photoelectric device according to Claim 20 wherein electrode materials are transparent conducting oxide.
23. The photoelectric device according to Claim 13 wherein the fourth electrode is formed from a material which transmits at least a portion of incident light to said second photoactive channel layer.
24. The photoelectric device according to Claim 23 wherein the fourth electrode material is a transparent conducting oxide.
25. The photoelectric device according to Claim 13 wherein the device is mechanically flexible.
CA2346294A 1998-10-09 1999-10-08 Solid-state photoelectric device Expired - Fee Related CA2346294C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10375898P 1998-10-09 1998-10-09
US60/103,758 1998-10-09
PCT/US1999/023409 WO2000022682A2 (en) 1998-10-09 1999-10-08 Solid-state photoelectric device

Publications (2)

Publication Number Publication Date
CA2346294A1 true CA2346294A1 (en) 2000-04-20
CA2346294C CA2346294C (en) 2011-06-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA2346294A Expired - Fee Related CA2346294C (en) 1998-10-09 1999-10-08 Solid-state photoelectric device

Country Status (5)

Country Link
US (2) US6239355B1 (en)
EP (1) EP1129496A2 (en)
AU (1) AU1311900A (en)
CA (1) CA2346294C (en)
WO (1) WO2000022682A2 (en)

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US6239355B1 (en) 2001-05-29
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WO2000022682A3 (en) 2001-02-01
AU1311900A (en) 2000-05-01

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