CA2346294A1 - Solid-state photoelectric device - Google Patents
Solid-state photoelectric device Download PDFInfo
- Publication number
- CA2346294A1 CA2346294A1 CA002346294A CA2346294A CA2346294A1 CA 2346294 A1 CA2346294 A1 CA 2346294A1 CA 002346294 A CA002346294 A CA 002346294A CA 2346294 A CA2346294 A CA 2346294A CA 2346294 A1 CA2346294 A1 CA 2346294A1
- Authority
- CA
- Canada
- Prior art keywords
- photoelectric device
- electrode
- photoactive
- channel layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract 12
- 239000000758 substrate Substances 0.000 claims abstract 10
- 239000002105 nanoparticle Substances 0.000 claims abstract 8
- 239000002861 polymer material Substances 0.000 claims 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- 229920000547 conjugated polymer Polymers 0.000 claims 4
- 239000007772 electrode material Substances 0.000 claims 4
- 239000011236 particulate material Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000975 dye Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims 2
- 230000003595 spectral effect Effects 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 claims 1
- -1 poly(p-phenylene vinylene) Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000002159 nanocrystal Substances 0.000 abstract 2
- 108091006149 Electron carriers Proteins 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a hole carrier. Within the first material are nanoparticles of a second material which operate as electron carriers. The nanoparticles are distributed within the photoactive channel layer such that, predominantly, the charge path between the two electrodes at any given location includes only a single nanocrystal. Because a majority of electrons are channeled to the electrodes via single nanocrystal conductive paths, the resulting architecture is referred to as a channel architecture.
Claims (25)
1. A photoelectric device comprising a substrate;
a first electrode formed on said substrate;
a photoactive channel layer; and a second electrode; said photoactive channel layer being interposed between said first and second electrodes.
a first electrode formed on said substrate;
a photoactive channel layer; and a second electrode; said photoactive channel layer being interposed between said first and second electrodes.
2. The photoelectric device according to Claim 1 wherein said photoactive channel layer includes a conjugated polymer material and a semiconductor particulate material.
3. The photoelectric device according to Claim 2 wherein the semiconductor particulate material includes nanoparticles having an average diameter and wherein the conjugated polymer material has a thickness in the range of one to two times the average diameter of the nanoparticles.
4. The photoelectric device according to Claim 3 wherein said polymer is poly(p-phenylene vinylene).
5. The photoelectric device according to Claim 4 wherein the nanoparticles are titanium dioxide.
6. The photoelectric device according to Claim 1 wherein the photoactive layer includes a dyestuff material.
7. The photoelectric device according to Claim 1 wherein said substrate and said first electrode are formed from a material which transmits at least a portion of incident light to said photoactive channel layer.
8. The photoelectric device according to Claim 7 wherein the substrate material is glass.
9. The photoelectric device according to Claim 7 wherein the first electrode material is a transparent conducting oxide.
10. The photoelectric device according to Claim 1 wherein the second electrode is formed from a material which transmits at least a portion of incident light to said photoactive channel layer.
11. The photoelectric device according to Claim 10 wherein the second electrode material is a transparent conducting oxide.
12. The photoelectric device according to Claim 1 wherein the substrate, first electrode, second electrode and photoactive channel layer are formed from mechanically flexible materials.
13. A photoelectric device comprising a substrate;
a first electrode formed on said substrate;
a first photoactive channel layer;
a second electrode, said first photoactive channel layer being interposed between said first and second electrodes;
an electrical insulating layer, said insulating layer being formed on said second electrode;
a third electrode disposed over said insulating layer;
a second photoactive channel layer; and a fourth electrode, said second photoactive channel layer being interposed between said third and fourth electrodes.
a first electrode formed on said substrate;
a first photoactive channel layer;
a second electrode, said first photoactive channel layer being interposed between said first and second electrodes;
an electrical insulating layer, said insulating layer being formed on said second electrode;
a third electrode disposed over said insulating layer;
a second photoactive channel layer; and a fourth electrode, said second photoactive channel layer being interposed between said third and fourth electrodes.
14. The photoelectric device according to Claim 13 wherein at least one of said first and second photoactive channel layers includes a conjugated polymer material and a semiconductor particulate material.
15. The photoelectric device according to Claim 14 wherein the semiconductor particulate material includes nanoparticles having an average diameter and wherein the conjugated polymer material has a thickness in the range of one to two times the average diameter of the nanoparticles.
16. The photoelectric device according to Claim 15 wherein said first photoactive channel layer is responsive to incident light in a first spectral range and said second photoactive channel layer is responsive to incident light in a second spectral range.
17. The photoelectric device according to Claim 16 wherein the nanoparticles in at least one of said first and second channel layers are titanium dioxide.
18. The photoelectric device according to Claim 17 wherein the polymer material of one of said first and second photoactive channel layers is PPV and the other of said first and second photoactive channel layers is MEH-PPV.
19. The photoelectric device according to Claim 13 wherein at least one of the photoactive layer includes a dyestuff material.
20. The photoelectric device according to Claim 13 wherein said substrate, said first electrode, said first photoactive channel layer, said second electrode and said insulating layer are formed from materials which transmit at least a portion of incident light to said second photoactive channel layer.
21. The photoelectric device according to Claim 20 wherein the substrate material is glass.
22. The photoelectric device according to Claim 20 wherein electrode materials are transparent conducting oxide.
23. The photoelectric device according to Claim 13 wherein the fourth electrode is formed from a material which transmits at least a portion of incident light to said second photoactive channel layer.
24. The photoelectric device according to Claim 23 wherein the fourth electrode material is a transparent conducting oxide.
25. The photoelectric device according to Claim 13 wherein the device is mechanically flexible.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10375898P | 1998-10-09 | 1998-10-09 | |
US60/103,758 | 1998-10-09 | ||
PCT/US1999/023409 WO2000022682A2 (en) | 1998-10-09 | 1999-10-08 | Solid-state photoelectric device |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2346294A1 true CA2346294A1 (en) | 2000-04-20 |
CA2346294C CA2346294C (en) | 2011-06-28 |
Family
ID=22296890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2346294A Expired - Fee Related CA2346294C (en) | 1998-10-09 | 1999-10-08 | Solid-state photoelectric device |
Country Status (5)
Country | Link |
---|---|
US (2) | US6239355B1 (en) |
EP (1) | EP1129496A2 (en) |
AU (1) | AU1311900A (en) |
CA (1) | CA2346294C (en) |
WO (1) | WO2000022682A2 (en) |
Families Citing this family (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0917208A1 (en) * | 1997-11-11 | 1999-05-19 | Universiteit van Utrecht | Polymer-nanocrystal photo device and method for making the same |
US6303500B1 (en) * | 1999-02-24 | 2001-10-16 | Micron Technology, Inc. | Method and apparatus for electroless plating a contact pad |
AUPP931799A0 (en) * | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
US6649824B1 (en) * | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
US6900382B2 (en) | 2002-01-25 | 2005-05-31 | Konarka Technologies, Inc. | Gel electrolytes for dye sensitized solar cells |
US7414188B2 (en) * | 2002-01-25 | 2008-08-19 | Konarka Technologies, Inc. | Co-sensitizers for dye sensitized solar cells |
AT410859B (en) * | 2000-04-27 | 2003-08-25 | Qsel Quantum Solar Energy Linz | METHOD FOR PRODUCING A PHOTOVOLTAIC CELL WITH A PHOTOACTIVE LAYER FROM TWO ORGANIC COMPONENTS |
AT410729B (en) * | 2000-04-27 | 2003-07-25 | Qsel Quantum Solar Energy Linz | PHOTOVOLTAIC CELL WITH A PHOTOACTIVE LAYER OF TWO MOLECULAR ORGANIC COMPONENTS |
US7186911B2 (en) * | 2002-01-25 | 2007-03-06 | Konarka Technologies, Inc. | Methods of scoring for fabricating interconnected photovoltaic cells |
AT411306B (en) * | 2000-04-27 | 2003-11-25 | Qsel Quantum Solar Energy Linz | PHOTOVOLTAIC CELL WITH A PHOTOACTIVE LAYER OF TWO MOLECULAR ORGANIC COMPONENTS |
US20030192584A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Flexible photovoltaic cells and modules formed using foils |
US20030192585A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Photovoltaic cells incorporating rigid substrates |
US6913713B2 (en) * | 2002-01-25 | 2005-07-05 | Konarka Technologies, Inc. | Photovoltaic fibers |
US6858158B2 (en) * | 2002-01-25 | 2005-02-22 | Konarka Technologies, Inc. | Low temperature interconnection of nanoparticles |
US7351907B2 (en) * | 2002-01-25 | 2008-04-01 | Konarka Technologies, Inc. | Displays with integrated photovoltaic cells |
US6949400B2 (en) * | 2002-01-25 | 2005-09-27 | Konarka Technologies, Inc. | Ultrasonic slitting of photovoltaic cells and modules |
US7205473B2 (en) * | 2002-01-25 | 2007-04-17 | Konarka Technologies, Inc. | Photovoltaic powered multimedia greeting cards and smart cards |
US6706963B2 (en) * | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US20050284513A1 (en) * | 2002-08-08 | 2005-12-29 | Christoph Brabec | Chip card comprising an integrated energy converter |
US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
KR100394028B1 (en) * | 2000-12-28 | 2003-08-06 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device and method for manufacturing the same |
WO2002071496A1 (en) * | 2001-03-05 | 2002-09-12 | The Trustees Of Columbia University In The City Of New York | Solid-state electric device |
US8618595B2 (en) * | 2001-07-02 | 2013-12-31 | Merck Patent Gmbh | Applications of light-emitting nanoparticles |
US6846565B2 (en) * | 2001-07-02 | 2005-01-25 | Board Of Regents, The University Of Texas System | Light-emitting nanoparticles and method of making same |
US6918946B2 (en) * | 2001-07-02 | 2005-07-19 | Board Of Regents, The University Of Texas System | Applications of light-emitting nanoparticles |
US20030066998A1 (en) * | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
US6819845B2 (en) | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
US6710366B1 (en) | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
US7005669B1 (en) | 2001-08-02 | 2006-02-28 | Ultradots, Inc. | Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods |
US6794265B2 (en) * | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
WO2003021635A2 (en) | 2001-09-05 | 2003-03-13 | Rensselaer Polytechnic Institute | Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles |
US7777303B2 (en) * | 2002-03-19 | 2010-08-17 | The Regents Of The University Of California | Semiconductor-nanocrystal/conjugated polymer thin films |
IL146226A0 (en) * | 2001-10-29 | 2002-12-01 | Yissum Res Dev Co | Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom |
DE10155346C1 (en) * | 2001-11-10 | 2003-06-12 | Fraunhofer Ges Forschung | Solar cell and process for its production |
WO2003065472A2 (en) * | 2002-01-25 | 2003-08-07 | Konarka Technologies, Inc. | Structures and materials for dye sensitized solar cells |
WO2003081683A1 (en) * | 2002-03-19 | 2003-10-02 | The Regents Of The University Of California | Semiconductor-nanocrystal/conjugated polymer thin films |
AU2003272275A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
US7572393B2 (en) * | 2002-09-05 | 2009-08-11 | Nanosys Inc. | Organic species that facilitate charge transfer to or from nanostructures |
AU2003298998A1 (en) * | 2002-09-05 | 2004-04-08 | Nanosys, Inc. | Oriented nanostructures and methods of preparing |
EP1537445B1 (en) * | 2002-09-05 | 2012-08-01 | Nanosys, Inc. | Nanocomposites |
US20050126628A1 (en) * | 2002-09-05 | 2005-06-16 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
AU2003279708A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US7534488B2 (en) * | 2003-09-10 | 2009-05-19 | The Regents Of The University Of California | Graded core/shell semiconductor nanorods and nanorod barcodes |
AU2003287659A1 (en) * | 2002-11-14 | 2004-06-15 | Sam-Shajing Sun | Photovoltaic devices based on a novel block copolymer |
JP2007515361A (en) * | 2003-03-06 | 2007-06-14 | レンセラー・ポリテクニック・インスティチュート | Rapid generation of nanoparticles from bulk solids at room temperature |
US20040183070A1 (en) * | 2003-03-21 | 2004-09-23 | International Business Machines Corporation | Solution processed pentacene-acceptor heterojunctions in diodes, photodiodes, and photovoltaic cells and method of making same |
DE10326547A1 (en) * | 2003-06-12 | 2005-01-05 | Siemens Ag | Tandem solar cell with a common organic electrode |
DE10326546A1 (en) * | 2003-06-12 | 2005-01-05 | Siemens Ag | Organic solar cell with an intermediate layer with asymmetric transport properties |
US8742253B1 (en) * | 2003-06-14 | 2014-06-03 | InterPhases Solar | Device configurations for CIS based solar cells |
KR20060034239A (en) * | 2003-06-26 | 2006-04-21 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Methods for forming patterns of a filled dielectric material on substrates |
KR101132076B1 (en) * | 2003-08-04 | 2012-04-02 | 나노시스, 인크. | System and process for producing nanowire composites and electronic substrates therefrom |
EP1513171A1 (en) * | 2003-09-05 | 2005-03-09 | Sony International (Europe) GmbH | Tandem dye-sensitised solar cell and method of its production |
GB0413398D0 (en) * | 2004-06-16 | 2004-07-21 | Koninkl Philips Electronics Nv | Electronic device |
US8592680B2 (en) * | 2004-08-11 | 2013-11-26 | The Trustees Of Princeton University | Organic photosensitive devices |
KR100882503B1 (en) * | 2004-10-06 | 2009-02-06 | 한국과학기술연구원 | Highly Efficient Counter Electrodes for Dye-sensitized Solar Cells and Method for Manufacturing Thereof |
WO2006073562A2 (en) * | 2004-11-17 | 2006-07-13 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
US20060110618A1 (en) * | 2004-11-24 | 2006-05-25 | General Electric Company | Electrodes for photovoltaic cells and methods for manufacture thereof |
KR100682928B1 (en) * | 2005-02-03 | 2007-02-15 | 삼성전자주식회사 | Energy downconversion film and quantum dot film comprising quantum dot |
EP1905064A2 (en) * | 2005-06-24 | 2008-04-02 | Applied Nanoworks, Inc. | Nanoparticles and method of making thereof |
US7772485B2 (en) * | 2005-07-14 | 2010-08-10 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US20070267055A1 (en) * | 2005-07-14 | 2007-11-22 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US7781673B2 (en) * | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US8158881B2 (en) | 2005-07-14 | 2012-04-17 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US20070181179A1 (en) * | 2005-12-21 | 2007-08-09 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
EP1917558B1 (en) * | 2005-08-22 | 2018-07-25 | Merck Patent GmbH | Displays with integrated photovoltaic cells |
US20070079867A1 (en) * | 2005-10-12 | 2007-04-12 | Kethinni Chittibabu | Photovoltaic fibers |
WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
WO2007117698A2 (en) * | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Composition including material, methods of depositing material, articles including same and systems for depositing material |
WO2007120877A2 (en) * | 2006-04-14 | 2007-10-25 | Qd Vision, Inc. | Transfer surface for manufacturing a light emitting device |
WO2007124445A2 (en) * | 2006-04-21 | 2007-11-01 | Innovalight, Inc. | Organosilane-stabilized nanoparticles of si or ge in an oxide matrix |
US20070254996A1 (en) * | 2006-04-28 | 2007-11-01 | Krzysztof Nauka | Nanocrystal-polymer composite materials and methods of attaching nanocrystals to polymer molecules |
WO2008111947A1 (en) * | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
US20080035197A1 (en) * | 2006-07-10 | 2008-02-14 | Dmytro Poplavskyy | Photoactive materials containing bulk and quantum-confined semiconductor structures and optoelectronic devices made therefrom |
US20100139744A1 (en) * | 2006-08-31 | 2010-06-10 | Elena Rogojina | Fullerene-capped group iv semiconductor nanoparticles and devices made therefrom |
WO2008085210A2 (en) * | 2006-09-12 | 2008-07-17 | Qd Vision, Inc. | Electroluminescent display useful for displaying a predetermined pattern |
US20080078441A1 (en) * | 2006-09-28 | 2008-04-03 | Dmitry Poplavskyy | Semiconductor devices and methods from group iv nanoparticle materials |
US20080230782A1 (en) * | 2006-10-09 | 2008-09-25 | Homer Antoniadis | Photoconductive devices with enhanced efficiency from group iv nanoparticle materials and methods thereof |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US8008421B2 (en) * | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
EP2087529A2 (en) * | 2006-11-15 | 2009-08-12 | Innovalight, Inc. | A method of fabricating a densified nanoparticle thin film with a set of occluded pores |
TW200908409A (en) | 2007-08-10 | 2009-02-16 | Univ Nat Taiwan | A tree-like nanostructure solar battery and its manufacturing method |
KR100921476B1 (en) * | 2007-08-29 | 2009-10-13 | 한국과학기술연구원 | Dye-sensitized solar cell with metal oxide layer composed of metal oxide nanoparticles by electrospinning and the fabrication method thereof |
US20100275982A1 (en) * | 2007-09-04 | 2010-11-04 | Malcolm Abbott | Group iv nanoparticle junctions and devices therefrom |
TW200915583A (en) * | 2007-09-17 | 2009-04-01 | Univ Nat Taiwan Science Tech | Photoelectric electrodes capable of absorbing solar energy, fabrication methods, and applications thereof |
WO2009137141A2 (en) * | 2008-02-21 | 2009-11-12 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US7704866B2 (en) * | 2008-03-18 | 2010-04-27 | Innovalight, Inc. | Methods for forming composite nanoparticle-metal metallization contacts on a substrate |
US8361834B2 (en) | 2008-03-18 | 2013-01-29 | Innovalight, Inc. | Methods of forming a low resistance silicon-metal contact |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
CN102047098B (en) | 2008-04-03 | 2016-05-04 | Qd视光有限公司 | Comprise the luminescent device of quantum dot |
US7923368B2 (en) * | 2008-04-25 | 2011-04-12 | Innovalight, Inc. | Junction formation on wafer substrates using group IV nanoparticles |
US8455606B2 (en) * | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
TWI394309B (en) * | 2009-12-30 | 2013-04-21 | Ind Tech Res Inst | Dye-sensitized solar cell and method forming the same |
US11133390B2 (en) * | 2013-03-15 | 2021-09-28 | The Boeing Company | Low temperature, thin film crystallization method and products prepared therefrom |
KR102605375B1 (en) * | 2016-06-29 | 2023-11-22 | 삼성전자주식회사 | Organic photoelectronic device and image sensor |
US11145822B2 (en) | 2017-10-20 | 2021-10-12 | Samsung Electronics Co., Ltd. | Compound and photoelectric device, image sensor, and electronic device including the same |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3038952A (en) * | 1959-05-20 | 1962-06-12 | Hoffman Electronics Corp | Method of making a solar cell panel |
US3186873A (en) * | 1959-09-21 | 1965-06-01 | Bendix Corp | Energy converter |
NL6510097A (en) * | 1965-08-04 | 1967-02-06 | ||
US3653971A (en) * | 1969-07-09 | 1972-04-04 | Lidorenko Nikolai S | Semiconductor photoelectric generator |
US3690953A (en) * | 1970-09-10 | 1972-09-12 | Us Air Force | Vertical junction hardened solar cell |
US4082570A (en) * | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
US4143297A (en) * | 1976-03-08 | 1979-03-06 | Brown, Boveri & Cie Aktiengesellschaft | Information display panel with zinc sulfide powder electroluminescent layers |
US4270263A (en) * | 1977-02-14 | 1981-06-02 | Texas Instruments Incorporated | Glass support light energy converter |
US4175981A (en) * | 1978-07-03 | 1979-11-27 | Xerox Corporation | Photovoltaic cell comprising metal-free phthalocyanine |
US4159212A (en) * | 1978-09-18 | 1979-06-26 | Atlantic Richfield Company | Luminescent solar collector |
JPS5784185A (en) * | 1980-11-14 | 1982-05-26 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric converter |
JPS57153478A (en) * | 1981-03-19 | 1982-09-22 | Agency Of Ind Science & Technol | Photoelectric conversion device |
US4407320A (en) * | 1981-09-08 | 1983-10-04 | Texas Instruments Incorporated | Large area, fault tolerant solar energy converter |
JPS59229863A (en) * | 1983-06-13 | 1984-12-24 | Oki Electric Ind Co Ltd | Manufacture of color sensor |
JPS609179A (en) | 1983-06-28 | 1985-01-18 | Matsushita Electric Ind Co Ltd | Photovoltaic element and beam irradiating method to said element |
US4902567A (en) * | 1987-12-31 | 1990-02-20 | Loctite Luminescent Systems, Inc. | Electroluminescent lamp devices using monolayers of electroluminescent materials |
US4948976A (en) * | 1989-02-09 | 1990-08-14 | Servo Corporation Of America | Multi-wavelength band infrared detector |
US5401587A (en) * | 1990-03-27 | 1995-03-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Anisotropic nanophase composite material and method of producing same |
JP2999280B2 (en) * | 1991-02-22 | 2000-01-17 | キヤノン株式会社 | Photovoltaic element |
US5415700A (en) * | 1993-12-10 | 1995-05-16 | State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Concrete solar cell |
EP0744779A3 (en) * | 1995-05-17 | 1998-10-21 | Matsushita Battery Industrial Co Ltd | A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms |
US5674325A (en) * | 1995-06-07 | 1997-10-07 | Photon Energy, Inc. | Thin film photovoltaic device and process of manufacture |
AU7209496A (en) | 1995-10-24 | 1997-05-15 | Isa Ag Arch | Method for making an electrochemical cell, and resulting electrochemical cell |
US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
EP0917208A1 (en) * | 1997-11-11 | 1999-05-19 | Universiteit van Utrecht | Polymer-nanocrystal photo device and method for making the same |
WO1999039372A2 (en) | 1998-02-02 | 1999-08-05 | Uniax Corporation | Image sensors made from organic semiconductors |
EP0948004A1 (en) * | 1998-03-26 | 1999-10-06 | Akzo Nobel N.V. | Method for making a photovoltaic cell containing a dye |
EP1028475A1 (en) * | 1999-02-09 | 2000-08-16 | Sony International (Europe) GmbH | Electronic device comprising a columnar discotic phase |
US6649824B1 (en) * | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
WO2002071496A1 (en) * | 2001-03-05 | 2002-09-12 | The Trustees Of Columbia University In The City Of New York | Solid-state electric device |
US6812636B2 (en) * | 2001-03-30 | 2004-11-02 | Candescent Technologies Corporation | Light-emitting device having light-emissive particles partially coated with light-reflective or/and getter material |
US20040003838A1 (en) * | 2002-07-05 | 2004-01-08 | Curtin Lawrence F. | Nano photovoltaic/solar cells |
AU2003279708A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
-
1999
- 1999-10-08 EP EP99956523A patent/EP1129496A2/en not_active Ceased
- 1999-10-08 CA CA2346294A patent/CA2346294C/en not_active Expired - Fee Related
- 1999-10-08 US US09/414,799 patent/US6239355B1/en not_active Ceased
- 1999-10-08 WO PCT/US1999/023409 patent/WO2000022682A2/en active Application Filing
- 1999-10-08 AU AU13119/00A patent/AU1311900A/en not_active Abandoned
-
2003
- 2003-05-29 US US10/449,163 patent/USRE39967E1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU1311900A (en) | 2000-05-01 |
WO2000022682A2 (en) | 2000-04-20 |
USRE39967E1 (en) | 2008-01-01 |
EP1129496A2 (en) | 2001-09-05 |
WO2000022682A3 (en) | 2001-02-01 |
US6239355B1 (en) | 2001-05-29 |
CA2346294C (en) | 2011-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2346294A1 (en) | Solid-state photoelectric device | |
KR100612970B1 (en) | Polymer devices | |
EP1318553B1 (en) | Organic semicondutor element | |
KR100726061B1 (en) | Electrical connection of optoelectronic devices | |
JP5265076B2 (en) | Photovoltaic component and method of manufacturing the same | |
EP1610397B1 (en) | Metal compound-metal multilayer electrodes for organic electronic devices | |
KR20010093809A (en) | Display devices | |
US20150014627A1 (en) | Two-terminal electronic devices and their methods of fabrication | |
US20080142079A1 (en) | Photovoltaic cell | |
WO1999063614A8 (en) | Method of manufacturing photoelectric cell and oxide semiconductor for photoelectric cell | |
JP6002264B1 (en) | Solar cell module | |
JP2009506554A (en) | Encapsulated electrodes for organic devices | |
WO2017115646A1 (en) | Photoelectric conversion element and imaging device | |
KR20110049832A (en) | Electronic components with integrated encapsulation | |
WO2016014345A2 (en) | Two-terminal electronic devices and their methods of fabrication | |
US8967848B2 (en) | Lighting device | |
KR101205613B1 (en) | Organic electronic device having low background luminescence | |
KR20150019132A (en) | Light transmission type two sided solar cell | |
US8237050B2 (en) | Solar cell with organic material in the photovoltaic layer and method for the production thereof | |
JP2004501367A (en) | Ionizing radiation detector using polymer semiconductor material | |
KR102556085B1 (en) | A new organic phototransistors with organic channel/dielectric/sensing triple layers | |
Bera et al. | The Role of Nanocrystal Size in Solution Processable CdSe: P3HT Hybrid Photovoltaic Devices | |
JP2023550836A (en) | Field width adjustment of cells in photovoltaic devices | |
JP2003347568A (en) | Photoelectric conversion element and method of manufacturing the same | |
WO2004018063A1 (en) | Interconnectable building blocks |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
FZDC | Discontinued application reinstated | ||
MKLA | Lapsed |
Effective date: 20161011 |