CA2447373A1 - Redundant optical device array - Google Patents
Redundant optical device array Download PDFInfo
- Publication number
- CA2447373A1 CA2447373A1 CA002447373A CA2447373A CA2447373A1 CA 2447373 A1 CA2447373 A1 CA 2447373A1 CA 002447373 A CA002447373 A CA 002447373A CA 2447373 A CA2447373 A CA 2447373A CA 2447373 A1 CA2447373 A1 CA 2447373A1
- Authority
- CA
- Canada
- Prior art keywords
- optical
- lasers
- devices
- group
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/03—Arrangements for fault recovery
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Abstract
An optical module has multiple optical devices (500). At least two of the multiple optical devices (502, 504) are a group. Each of the optical devices in the group are individually selectable relative to the others. The optical module also has a controller (506), coupled to the devices such that the controller can select which of the devices in the group will be active at a given time. A method of creating an optical chip, having redundant devices, for use in an optoelectronic unit involves growing active portions of multip le optical devices on a wafer, processing the wafer to create complete optical devices, creating individual optical devices (502, 504), grouping the device s; and connecting the devices in a group to a control circuit (506) such that, common data can be received by any of the devices in the group but the commo n data will only be handled by the device in the group that is active.
Description
TITLE
REDUNDANT OPTICAL DEVICE ARRAY
FIELD OF THE INVENTION
This invention relates to arrays of optical devices such as lasers and photodetectors and, more particularly, to arrays of optical devices having increased yield and longer lifetime.
BACKGROUND OF THE INVENTION
Over the past few years the dramatic increase in the use of fiber optics in communications systems has created a tremendous need for both cheaper and more reliable optical components. Unfortunately, the limited materials usable to create acceptable laser diodes and photo detectors for use in such devices effectively limits the mean time between failures (MTBF) that can be achieved for such devices.
Typically diode lasers or photodetectors are fabricated by growing the devices on a semiconductor substrate. Depending upon the particular devices and there design, this may entail the use of known techniques such as liquid-phase epitaxy, metal-organic vapor-phase epitaxy, molecular beam epitaxy. Each of these techniques has its advantages and disadvantages in terms of the quality, reliability, and frequency of defect occurrence.
Once the active portion of the device is produce by the epitaxial growth process, the devices are then further processed into device chips. During these processes dielectric films and various metals are deposited on the semiconductor , for example, to isolate parts or create contacts. Finally, photolithography and/or chemical or physical etching are used to finish the devices. Once the device structures are fully formed in the semiconductor wafer, each device is separated from the wafer, for example, by cleaving.
FIGS. 1A and 1B show two variants of an example optical device of the prior art, a semiconductor laser diode. The specific devices 110, 120 shown in FIGS. 1A and 1B are vertical cavity surface emitting lasers (VCSEL). As shown, each device 110, 120 is contained in an approximately 200 micrometer (micron) square area of semi-conductor material. Each device 110, 120 has an optical window 112, 122 of approximately micron diameter. The device 110 ,120 is connected via a trace 114, 124 to a bonding pad 116, 126 approximately 100 microns square. In Fig. 1A, the bonding pad serves as the positive ("+") contact and in FIG. 1 B, the bonding pad serves as the negative ("-") contact.
FIG. 2 shows multiple individual VCSELs that have been combined to form at least a 2 X 3 array of lasers. The devices 200 are arranged so that the spacing between each laser (i.e. the "pitch") is approximately 250 microns. Such arrays can be relatively reliable, because each individual laser device 200 can be operationally tested before it is integrated into the array. However, once the array is created, if an individual element fails, either the entire array must be replaced or the array becomes degraded because there is no easy way to repair it.
Moreover, even if the array is created from macrostructures, for example, so that there are 1 X 4 discrete devices on a common carrier. If any one of the devices is defective, the entire carrier becomes useless or the individual good devices must be removed from it and used individually.
All of the above results in arrays that are both costly to produce and, in their overall configuration, have an overall MTBF of the least reliable device in the array.
Thus there remains a need in the art for a way to produce a chip incorporating an array of optical devices that is less costly to produce.
There remains a further need in the art for an array that is easy to repair at low cost.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A and 1B show two variants of an example semiconductor laser diode optical device of the prior art;
FIG. 2 shows multiple VCSEL's of FIG. 1 arranged in an array according to the prior art;
FIG. 3 shows a redundant laser pair from an array in accordance with the invention;
FIG. 4A shows a group of four redundant lasers from an array according to the mvenhon;
FIG. 4B functionally shows contacts for the group of FIG. 4A;
FIG. 5 shows the functional components of an opto-electronic chip suitable for use in accordance with the invention;
FIG. 6 shows the chip of FIG. 5 employing pairs of redundant lasers according to the invention;
FIG. 7 shows an alternative variant to the chip of FIG. 6;
FIG. 8 shows the chip of FIG. 5 employing groups of four redundant lasers according to the invention;
FIG. 9 shows the chip of FIG. 5 employing pairs of redundant photodetectors according to the invention;
FIG. 10 shows a device of FIG. S employing groups of four redundant photo detectors according to the invention;
FIG. 11A shows one functional example of circuitry for selecting from among two or more redundant devices according to the invention;
FIG. 11B shows another functional example of circuitry from among two or more redundant devices according to the invention;
FIG. 12 functionally shows an opto-electronic transceiver incorporating the invention;
and FIG. 13 is a functional block diagram of example automatic failover circuitry for a group of two devices.
SUMMARY OF THE INVENTION
We have devised a way to create electro-optical chips that avoid the problems of the prior art.
In particular, we have created a way to deploy large numbers of optical devices in a manner which provides a higher overall yield and greater reliability.
Depending upon the particular implementation, further advantages such as reparability after deployment, and performance optimization can be achieved.
One aspect of the invention involves an optical module having multiple optical devices. At least two of the multiple optical devices are a group. Each of the optical devices in the group are individually selectable relative to the others. The optical module also has a controller, coupled to the devices such that the controller can select which of the devices in the group will be active at a given time.
Another aspect of the invention involves a method of creating an optical chip, having redundant devices, for use in an opto-electronic unit involves growing active portions of multiple optical devices on a wafer, processing the wafer to create complete optical devices, creating individual optical devices, grouping the devices; and connecting the devices in agroup to a control circuit such that, common data can be received by any of the devices in the group but the common data will only be handled by the device in the group that is active.
Yet another aspect of the invention involves a communications network that has a first transmitter having a number of usable channels, a first receiver, and optical fibers connecting the first transmitter to the first receiver. The first transmitter has multiple lasers, at least some being selectable as either active or backup lasers. The multiple lasers are controllable such that, if a specific channel is in use by an active laser and a laser failure occurs for that channel, a redundant laser can be substituted for the active laser and, after the substitution, the specific channel can be used using the redundant laser.
REDUNDANT OPTICAL DEVICE ARRAY
FIELD OF THE INVENTION
This invention relates to arrays of optical devices such as lasers and photodetectors and, more particularly, to arrays of optical devices having increased yield and longer lifetime.
BACKGROUND OF THE INVENTION
Over the past few years the dramatic increase in the use of fiber optics in communications systems has created a tremendous need for both cheaper and more reliable optical components. Unfortunately, the limited materials usable to create acceptable laser diodes and photo detectors for use in such devices effectively limits the mean time between failures (MTBF) that can be achieved for such devices.
Typically diode lasers or photodetectors are fabricated by growing the devices on a semiconductor substrate. Depending upon the particular devices and there design, this may entail the use of known techniques such as liquid-phase epitaxy, metal-organic vapor-phase epitaxy, molecular beam epitaxy. Each of these techniques has its advantages and disadvantages in terms of the quality, reliability, and frequency of defect occurrence.
Once the active portion of the device is produce by the epitaxial growth process, the devices are then further processed into device chips. During these processes dielectric films and various metals are deposited on the semiconductor , for example, to isolate parts or create contacts. Finally, photolithography and/or chemical or physical etching are used to finish the devices. Once the device structures are fully formed in the semiconductor wafer, each device is separated from the wafer, for example, by cleaving.
FIGS. 1A and 1B show two variants of an example optical device of the prior art, a semiconductor laser diode. The specific devices 110, 120 shown in FIGS. 1A and 1B are vertical cavity surface emitting lasers (VCSEL). As shown, each device 110, 120 is contained in an approximately 200 micrometer (micron) square area of semi-conductor material. Each device 110, 120 has an optical window 112, 122 of approximately micron diameter. The device 110 ,120 is connected via a trace 114, 124 to a bonding pad 116, 126 approximately 100 microns square. In Fig. 1A, the bonding pad serves as the positive ("+") contact and in FIG. 1 B, the bonding pad serves as the negative ("-") contact.
FIG. 2 shows multiple individual VCSELs that have been combined to form at least a 2 X 3 array of lasers. The devices 200 are arranged so that the spacing between each laser (i.e. the "pitch") is approximately 250 microns. Such arrays can be relatively reliable, because each individual laser device 200 can be operationally tested before it is integrated into the array. However, once the array is created, if an individual element fails, either the entire array must be replaced or the array becomes degraded because there is no easy way to repair it.
Moreover, even if the array is created from macrostructures, for example, so that there are 1 X 4 discrete devices on a common carrier. If any one of the devices is defective, the entire carrier becomes useless or the individual good devices must be removed from it and used individually.
All of the above results in arrays that are both costly to produce and, in their overall configuration, have an overall MTBF of the least reliable device in the array.
Thus there remains a need in the art for a way to produce a chip incorporating an array of optical devices that is less costly to produce.
There remains a further need in the art for an array that is easy to repair at low cost.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A and 1B show two variants of an example semiconductor laser diode optical device of the prior art;
FIG. 2 shows multiple VCSEL's of FIG. 1 arranged in an array according to the prior art;
FIG. 3 shows a redundant laser pair from an array in accordance with the invention;
FIG. 4A shows a group of four redundant lasers from an array according to the mvenhon;
FIG. 4B functionally shows contacts for the group of FIG. 4A;
FIG. 5 shows the functional components of an opto-electronic chip suitable for use in accordance with the invention;
FIG. 6 shows the chip of FIG. 5 employing pairs of redundant lasers according to the invention;
FIG. 7 shows an alternative variant to the chip of FIG. 6;
FIG. 8 shows the chip of FIG. 5 employing groups of four redundant lasers according to the invention;
FIG. 9 shows the chip of FIG. 5 employing pairs of redundant photodetectors according to the invention;
FIG. 10 shows a device of FIG. S employing groups of four redundant photo detectors according to the invention;
FIG. 11A shows one functional example of circuitry for selecting from among two or more redundant devices according to the invention;
FIG. 11B shows another functional example of circuitry from among two or more redundant devices according to the invention;
FIG. 12 functionally shows an opto-electronic transceiver incorporating the invention;
and FIG. 13 is a functional block diagram of example automatic failover circuitry for a group of two devices.
SUMMARY OF THE INVENTION
We have devised a way to create electro-optical chips that avoid the problems of the prior art.
In particular, we have created a way to deploy large numbers of optical devices in a manner which provides a higher overall yield and greater reliability.
Depending upon the particular implementation, further advantages such as reparability after deployment, and performance optimization can be achieved.
One aspect of the invention involves an optical module having multiple optical devices. At least two of the multiple optical devices are a group. Each of the optical devices in the group are individually selectable relative to the others. The optical module also has a controller, coupled to the devices such that the controller can select which of the devices in the group will be active at a given time.
Another aspect of the invention involves a method of creating an optical chip, having redundant devices, for use in an opto-electronic unit involves growing active portions of multiple optical devices on a wafer, processing the wafer to create complete optical devices, creating individual optical devices, grouping the devices; and connecting the devices in agroup to a control circuit such that, common data can be received by any of the devices in the group but the common data will only be handled by the device in the group that is active.
Yet another aspect of the invention involves a communications network that has a first transmitter having a number of usable channels, a first receiver, and optical fibers connecting the first transmitter to the first receiver. The first transmitter has multiple lasers, at least some being selectable as either active or backup lasers. The multiple lasers are controllable such that, if a specific channel is in use by an active laser and a laser failure occurs for that channel, a redundant laser can be substituted for the active laser and, after the substitution, the specific channel can be used using the redundant laser.
These and other aspects described herein, or resulting from the using teachings contained herein, provide advantages and benefits over the prior art.
The advantages and features described herein are a few of the many advantages and features available from representative embodiments and are presented only to assist in understanding the invention. It should be understood that they are not to be considered limitations on the invention as defined by the claims, or limitations on equivalents to the claims. For instance, some of these advantages are mutually contradictory, in that they cannot be simultaneously present in a single embodiment. Similarly, some advantages are applicable to one aspect of the invention, and inapplicable to others. Thus, this summary of features and advantages should not be considered dispositive in determining equivalence. Additional features and advantages of the invention will become apparent in the following description, from the drawings, and from the claims.
DETAILED DESCRIPTION
FIG. 3 shows a portion 300 of a two dimensional array of lasers 302 created according to the principles of the invention. The portion shows two individual laser devices 302 bonded via contact pads 304 to an electronic chip 306. As shown, the devices 302 are bottom emitting laser devices that have been flip chipped bonded to the electronic chip, although as will be apparent from the description herein, bottom receiving, top emitting or top receiving devices can be used as well, particularly if the approaches of the commonly assigned U.S.
patent applications entitled Opto-Electronic Device Integration filed concurrently herewith (which are incorporated herein by reference) is employed as part of the process.
Because the substrates 308 have not been removed or excessively thinned, emissions of the lasers occur via access ways 310 created in the substrate 308 on which the laser devices were supported to allow for close optical access to the devices. The spacing between the access ways, i.e. the pitch, is such that each of the lasers 302 can be either directly coupled to a single optical fiber, or directed into a common optical fiber, for example, by focusing the light output using a micro lens or guiding the light using an optical waveguide.
Thus, depending upon the particular lasers and fibers used, the pitch between the two lasers can be as small as 5-10 microns for direct lasing into a single mode fiber or 50-100 microns for direct lasing into a multimode fiber. Alternatively, if an optical wave guide or focussing lens is used, the inter-device pitch becomes less important and may be as much as a 100 microns or more as needed.
The advantages and features described herein are a few of the many advantages and features available from representative embodiments and are presented only to assist in understanding the invention. It should be understood that they are not to be considered limitations on the invention as defined by the claims, or limitations on equivalents to the claims. For instance, some of these advantages are mutually contradictory, in that they cannot be simultaneously present in a single embodiment. Similarly, some advantages are applicable to one aspect of the invention, and inapplicable to others. Thus, this summary of features and advantages should not be considered dispositive in determining equivalence. Additional features and advantages of the invention will become apparent in the following description, from the drawings, and from the claims.
DETAILED DESCRIPTION
FIG. 3 shows a portion 300 of a two dimensional array of lasers 302 created according to the principles of the invention. The portion shows two individual laser devices 302 bonded via contact pads 304 to an electronic chip 306. As shown, the devices 302 are bottom emitting laser devices that have been flip chipped bonded to the electronic chip, although as will be apparent from the description herein, bottom receiving, top emitting or top receiving devices can be used as well, particularly if the approaches of the commonly assigned U.S.
patent applications entitled Opto-Electronic Device Integration filed concurrently herewith (which are incorporated herein by reference) is employed as part of the process.
Because the substrates 308 have not been removed or excessively thinned, emissions of the lasers occur via access ways 310 created in the substrate 308 on which the laser devices were supported to allow for close optical access to the devices. The spacing between the access ways, i.e. the pitch, is such that each of the lasers 302 can be either directly coupled to a single optical fiber, or directed into a common optical fiber, for example, by focusing the light output using a micro lens or guiding the light using an optical waveguide.
Thus, depending upon the particular lasers and fibers used, the pitch between the two lasers can be as small as 5-10 microns for direct lasing into a single mode fiber or 50-100 microns for direct lasing into a multimode fiber. Alternatively, if an optical wave guide or focussing lens is used, the inter-device pitch becomes less important and may be as much as a 100 microns or more as needed.
During device creation the lasers are separated into individual devices by patterning the laser wafer prior to bonding with the electronic chip, for example as shown in the incorporated commonly assigned application entitled, Opto-Electronic Device Integration.
Additionally, the devices are patterned with grouping trenches 312 which physically and S electrically define groups by creating boundaries separating individual groups 314 of redundant devices. The grouping trenches 312 ensure isolation among the individual groups while allowing for carrier movement among the devices within the group via the electrically conductive substrate 308. In this manner a group is physically created as either multiple discrete devices or a single "device" having multiple active regions.
All the devices in a group 314 share a common connection (either the positive or negative contact) so that any signal to be sent or received by any of the devices can be sent or received by any other of the devices in the group irrespective of which one is selected as being active using the contacts. In other words, if three lasers constitute a group in an optical module, such as an optical transmitter, they will be coupled to a single optical fiber, all have one contact in common and all have individual opposite polarity contacts. If the transmitter were to send data through the optical fiber, the same signal would be sent irrespective of which laser was active at the time. Moreover, from the perspective of the functions of any prior art optical transmitter, the transmitter incorporating the invention can be oblivious to which laser in the group is active. Advantageously, the purchaser or user of the transmitter, or any other device employing the invention, need not know it contains device redundancy.
The features and elements that allow selection of the particular active laser can be wholly transparent to anyone other than the manufacturer or can be made accessible to third parties to varying degrees.
FIG. 4A shows a portion of a laser array employing groups 400 of four lasers 402 as a redundant group. As shown, the individual devices have been separated through patterning of separation trenches 404 which isolate the individual device contacts 406, and groups 400 have been created by patterning of grouping trenches 408 which isolate the common contact 410 from the common contacts) of other neighboring groups. As with FIG. 3, access ways 310 are provided through the substrate to provide for close optical access to the lasers. FIG.
4B is a functional representation of the group of FIG. 4A but showing the discrete contacts 406 for each laser and the substrate 308, which is used as the common contact.
Advantageously, by grouping the lasers in fours, significant flexibility can be obtained. For example, the best two of the four lasers can be used as a redundant pair with or without the remaining two lasers serving as back up devices for either laser in the pair, the best of the four lasers can be employed as a primary laser with each of the remaining three being available should the primary laser fail, or should any individual laser in the group be bad, it can be disregarded entirely.
FIG. 5 shows the functional components of an opto-electronic device 500 suitable for employing the principles of the invention. Functionally, the device includes a laser portion 502 which contains an array of individual lasers. The device also includes a detector portion 504 which includes an array of individual photodetectors. A control portion 506 is provided which contains the control electronics for accessing the individual lasers and/or detectors.
Additionally, a storage portion 508 can optionally be provided, as will be described in greater detail below. Finally, the device includes an interface portion 510 through which the opto-electronic chip may be electrically or programmatically connected to other devices or control electronics. Depending upon the particular implementation, the interface portion 510 may be functionally located between the control portion 506 (and/or the storage 508 if this option is used) and the devices 502, 504, for example where the control 506 and/or the storage 508 can be provided by a third party. In other variants, the interface 510 may provide a way to bypass or override either or both of the control portion 506 and/or storage 508 if either or both are present.
Functionally, the control portion 506 is, in whole or part, the "brains" of the opto electronic chip 500. At least, it is the brains with respect to the redundancy feature. The control portion 506 is physically made up of the hardware used to activate the individual devices based upon, for example, information stored in the storage, and/or to specify, update and/or change the stored information to initialize the chip or reprogram it following a failure.
Depending upon the particular implementation, the control portion will be a processor, for example, a microprocessor operating under program control, a state machine, hard wired circuitry or some combination thereof.
Depending upon the particular implementation, the storage will be in the form of static random access memory (SRAM), dynamic random access memory (DRAM or RAM), or some form of read only memory (ROM) which may be, for example, a device such as a programmable read only memory (PROM), an electronically programmable read only memory (EPROM), an electronically erasable programmable read only memory (EEPROM), a programmable logic device (PLD), etc. to name a few.
The storage 508 is accessible by the control portion 506 and is configured to allow the active device in each group to be specified. Optionally, the storage 508 can be further configured to keep track of redundant (i.e. back-up) devices and, as a further option, can be configured to specify the hierarchy or ordering for bringing on-line the remaining devices in the group if needed.
For example, Table 1 shows a simple table that can be employed for groups of device pairs. Each pair has a group address or identifier that uniquely identifies, directly or S indirectly, each discrete group. A single bit is used to designate the active device, for example, with a binary 0 representing the first device in the group and a binary 1 representing the second device in the group.
Group AddressActive Device Xo '1'A13LE 1 Table 2 shows an alternative arrangement for identifying the active device in the storage. As with Table 1, an address or identifier uniquely identifies the particular group.
Associated with that address is a rivo-bit binary number, where each bit corresponds to one device in the group and is used to signify whether that device is to be active.
Group AddressActive Device XiXo For example, a bit pattern of 00 would specify that neither device is active.
Bit patterns of O1 or 10 would indicate that one or the other device in the pair is active.
Depending upon the particular implementation, a bit pattern of 11 could, for example, be used to activate both devices for some special case or could simply be an invalid state.
Table 3 shows a similar arrangement for a chip having groups made up of four devices. In this case, a similar two bit binary number is used except, the actual number in binary is used to indicate the active device.
Group AddressActive Device X~Xo For example, a 00 would indicate that the first device in the group is active, a O1 would indicate the second device in the group is active. A 10 would indicate that the third device is active and a 11 would indicate that the fourth device is active.
Table 4 shows a more complex arrangement for keeping track of the active devices in a particular array having individual four device groups. As shown Table 4 includes an address as noted above. In addition, an eight-bit binary number (X,XoA~AoB~BoC~Co) is used to identify the particular laser device in the group that is the primary (i.e. active) device as well as a hierarchy for the remaining devices in the group.
Group Primary SecondaryTertiaryQuartic AddressDevice Device Device Device XIXo A~Ao BIBo C,Co l For example, for a particular address, an entry of 01110010 would indicate that the second device (O1) is active. In the event that device was unusable or failed, the next device to be brought on-line is the fourth device. If that device were to fail, the next devices brought on-line thereafter would be, in order, the first followed by the third.
As can be appreciated, there are numerous ways other ways to identify active devices and/or specify alternative devices, either by employing some variant or combination of the above examples, or creating some other methodology, for example, by designating each laser with a unique address (irrespective of its group) and maintaining a list of the addresses for the lasers in each group in the order they are to be brought on line or providing space for settings for each laser, such as bias and modulation, and filling the setting information in for active lasers and/or setting the bias and/or modulation settings to zero and/or an invalid value to deactivate a laser.
In an alternative implementation, involving no storage for device selection, the devices incorporate fusible links that can be used to bring a device on- or off line. For example, each device may incorporate two fusible links. Initially, neither link is blown so the device is inactive but available. To bring a device on line, circuitry is activated that causes a particular link to blow and renders the device active. In the event that device dies some time in the future, other circuitry can be enabled to blow the remaining link, rendering the device inactive. A redundant device in the group can then be brought on-line by blowing the first link for that redundant device in a similar manner.
Still other alternative implementations use a combination of storage and hard wiring or fusible links to accomplish the functions of the control and/or storage.
FIG. 6 shows an opto-electronic device of the type shown in FIG. 5 in greater detail and constructed according to the principles of the invention. As shown, the detector portion 604 is made up of 36 individual detectors and the laser portion 602 is made up of 36 pairs of redundant lasers. As shown, the individual lasers 606, 608 in a group 610 are separated by device trenches 612 and the groups are separated from each other by grouping trenches 614.
In addition, there are available areas 616 between adjacent rows of the paired redundant lasers. Depending upon the particular implementation, those areas may be wholly unused, may be occupied by lasers of other wavelengths than those of the redundant pair, or may represent additional lasers of the same type as the redundant pairs which have been disabled for one reason or another.
FIG. 7 shows an opto-electronic chip 700 similar to that of FIG. 6 except that the array has been patterned as if four discrete devices were present to make up a group 702.
However, each group contains only two lasers 704, 706.
FIG. 8 shows a chip 800 similar to the chip of FIG. 6 except that each individual group 802 is now made up of four individual lasers 804, 806, 808, 810.
FIG. 9 shows a chip 900 like the device of FIG. 5 but having pairs 902 of redundant photodetectors. As shown, the photodetectors are grouped, like the lasers of FIG. 6, by grouping trenches 904 and individual photo detectors 906, 908 within a group are separated by device trenches 910.
It is important to note in connection with redundant detectors, that the use of redundant detectors will require that either some additional device be used to redirect the incident light from one detector to the other detector in order to switch between them.
Alternatively, the light can be defocused or defracted so as to be incident on all pertinent devices on both (in this case) as required. As should be apparent however, if redundant detectors are used and no light redirection is provided the system must be capable of accepting the losses due to such defocusing or defracting because the amount of incident light will be reduced exponentially as it is defocused to a larger and larger area to accommodate a larger number of redundant devices or a large pitch among them.
FIG. 10 shows a chip 1000 having an array 1002 similar to the array of FIG. 9 except that the array of FIG. 10 incorporates four redundant detectors 1004, 1006, 1008, 1010 per group.
Having shown a number of functional variants according to the invention, some examples of aspects usable for specific implementations will now be provided.
FIG. 11A shows one functional example of a circuitry arrangement for selecting from among two or more redundant devices according to the invention. In variants according to this example, a common data signal source 1102 is connected to all of the lasers 1104 in a group. As shown two or more lasers are in the group. A multiplexor 1106 (for 1 -to- 1 connections) or a selector (for 1 -to- 1 or more connections) is inserted between the power source 1108 for the lasers and the lasers themselves. The control information (whether bit based or bias/modulation based) is used by the control portion 1110 to select which laser receives power. Alternatively, in some variants, the multiplexor can be replaced with a selector that can select any one or more of the lasers.
FIG. 11B shows another functional example of a circuitry arrangement from among two or more redundant devices according to the invention. In variants according to this example, a signal source 1 I 12 is amplified by an amplifier 1114 and connected to the lasers 1106 via a multiplexor (for 1-to-1 connections) or a selector (for 1-to-1 or more connections).
The multiplexor 1106 or selector is controlled in a similar manner to FIG. 1 1A.
FIG. 12 functionally shows a communication system including an opto-electronic transceiver 1200 incorporating the invention. As shown, the transceiver 1200 includes a chip 1202 incorporating redundant lasers 1204 in accordance with the invention. The transceiver 1200 is arranged so that each pair of lasers 1204 is coupled to a common fiber 1206. As shown, optical waveguides 1208 shaped like a "Y", are used to guide laser light from either laser 1210 in the pair to a common fiber 1206. In other variants, other forms of waveguides, or microlenses, gratings, fused fibers, etc., are used to couple the two or more lasers to a common fiber, the particular coupling method used being irrelevant to understanding the invention.
The transceiver 1200 also includes an electronic interface 1212 through which electrical signals, for example digital data can be received and sent.
Depending upon the particular set up, the transceiver 1200 may be constructed to convert received digital signals into optical signals to be transmitted over one or more fibers using the lasers, to a receiver 1214, which may be a standalone unit or be part of another transceiver, having photodetectors 1216. Additionally or alternatively, the transceiver 1200 may use those digital signals as control signals and/or receive the signals for use as in any conventional electro-optical transceiver. Similarly, the transceiver 1200 is constructed to detect incident light received on its detectors 1218 and convert that light to digital signals that are then output via the electronic interface in a conventional manner.
Advantageously, further variants can be constructed for automatic failover.
FIG. 13 is a functional block diagram of one example way to integrate automatic failover.
As shown, a group 1300 is made up of two lasers 1302, 1304 coupled to a common fiber, for example, a "cone" or "funnel" shaped waveguide 1305, that is common to both lasers 1302, 1304. The controller 1306 selects which laser is active by outputting a logical one or zero. A sensor 1308 monitors the output of the active laser, for example via sampling the output power of the laser when in use, and feeds the result back to a failover controller 1310, which may or may not be part of the controller 1306 but is functionally shown separately for purposes of understanding. The failover controller 1310 is used to determine if the active laser should be switched out in favor of another laser in the group based upon some value related to the performance of the laser - in this case output power. Depending upon the particular implementation, any of the many different known techniques for determining if a value is at a limit or within a range can be used. For example, a comparator may be used to directly or logically compare the sample to a threshold value, a trigger can be set to fire when the sample falls below a threshold, etc. . .
If, at some point, the laser power falls below the specified limit or goes outside the desired range, that laser will be deactivated in favor of another laser in the group using one of the techniques noted above. For example, as shown, the failover controller 1310 is connected to the storage 1312 so that if a failover for a laser is required, the failover controller 1310 changes the value in the storage 1312. That causes the controller 1306 to de-activate the one laser 1302 in favor of the backup laser 1304.
Depending upon the particular implementation, it may be desirable include circuitry or stored information such that, if a substitution of one device for another has occurred (whether automatically or manually) the "bad" device can be designated as such to prevent a switch back to the bad device if the backup device fails.
It should be understood that, although described largely in connection with an optical transceiver, the invention may be straightforwardly employed in an optical transmitter module or an optical receiver module, there being no need for any particular implementation to have two different types of devices (i.e. transmitters and receivers) to be present in the same unit to use the invention.
Moreover, it should be understood that the invention may be straightforwardly employed with any type of laser device, i.e. surface emitting lasers, distributed feedback (DFB) lasers, Distributed Bragg Reflector (DBR) lasers and/or any type of photodetectors.
Thus, while we have shown and described various examples employing the invention, S it should be understood that the above description is only representative of illustrative embodiments. For the convenience of the reader, the above description has focused on a representative sample of all possible embodiments, a sample that teaches the principles of the invention. The description has not attempted to exhaustively enumerate all possible variations. That alternate embodiments may not have been presented for a specific portion of the invention, or that further undescribed alternate embodiments or other combinations of described portions may be available, is not to be considered a disclaimer of those alternate embodiments. It can be appreciated that many of those undescribed embodiments are within the literal scope of the following claims, and others are equivalent.
Additionally, the devices are patterned with grouping trenches 312 which physically and S electrically define groups by creating boundaries separating individual groups 314 of redundant devices. The grouping trenches 312 ensure isolation among the individual groups while allowing for carrier movement among the devices within the group via the electrically conductive substrate 308. In this manner a group is physically created as either multiple discrete devices or a single "device" having multiple active regions.
All the devices in a group 314 share a common connection (either the positive or negative contact) so that any signal to be sent or received by any of the devices can be sent or received by any other of the devices in the group irrespective of which one is selected as being active using the contacts. In other words, if three lasers constitute a group in an optical module, such as an optical transmitter, they will be coupled to a single optical fiber, all have one contact in common and all have individual opposite polarity contacts. If the transmitter were to send data through the optical fiber, the same signal would be sent irrespective of which laser was active at the time. Moreover, from the perspective of the functions of any prior art optical transmitter, the transmitter incorporating the invention can be oblivious to which laser in the group is active. Advantageously, the purchaser or user of the transmitter, or any other device employing the invention, need not know it contains device redundancy.
The features and elements that allow selection of the particular active laser can be wholly transparent to anyone other than the manufacturer or can be made accessible to third parties to varying degrees.
FIG. 4A shows a portion of a laser array employing groups 400 of four lasers 402 as a redundant group. As shown, the individual devices have been separated through patterning of separation trenches 404 which isolate the individual device contacts 406, and groups 400 have been created by patterning of grouping trenches 408 which isolate the common contact 410 from the common contacts) of other neighboring groups. As with FIG. 3, access ways 310 are provided through the substrate to provide for close optical access to the lasers. FIG.
4B is a functional representation of the group of FIG. 4A but showing the discrete contacts 406 for each laser and the substrate 308, which is used as the common contact.
Advantageously, by grouping the lasers in fours, significant flexibility can be obtained. For example, the best two of the four lasers can be used as a redundant pair with or without the remaining two lasers serving as back up devices for either laser in the pair, the best of the four lasers can be employed as a primary laser with each of the remaining three being available should the primary laser fail, or should any individual laser in the group be bad, it can be disregarded entirely.
FIG. 5 shows the functional components of an opto-electronic device 500 suitable for employing the principles of the invention. Functionally, the device includes a laser portion 502 which contains an array of individual lasers. The device also includes a detector portion 504 which includes an array of individual photodetectors. A control portion 506 is provided which contains the control electronics for accessing the individual lasers and/or detectors.
Additionally, a storage portion 508 can optionally be provided, as will be described in greater detail below. Finally, the device includes an interface portion 510 through which the opto-electronic chip may be electrically or programmatically connected to other devices or control electronics. Depending upon the particular implementation, the interface portion 510 may be functionally located between the control portion 506 (and/or the storage 508 if this option is used) and the devices 502, 504, for example where the control 506 and/or the storage 508 can be provided by a third party. In other variants, the interface 510 may provide a way to bypass or override either or both of the control portion 506 and/or storage 508 if either or both are present.
Functionally, the control portion 506 is, in whole or part, the "brains" of the opto electronic chip 500. At least, it is the brains with respect to the redundancy feature. The control portion 506 is physically made up of the hardware used to activate the individual devices based upon, for example, information stored in the storage, and/or to specify, update and/or change the stored information to initialize the chip or reprogram it following a failure.
Depending upon the particular implementation, the control portion will be a processor, for example, a microprocessor operating under program control, a state machine, hard wired circuitry or some combination thereof.
Depending upon the particular implementation, the storage will be in the form of static random access memory (SRAM), dynamic random access memory (DRAM or RAM), or some form of read only memory (ROM) which may be, for example, a device such as a programmable read only memory (PROM), an electronically programmable read only memory (EPROM), an electronically erasable programmable read only memory (EEPROM), a programmable logic device (PLD), etc. to name a few.
The storage 508 is accessible by the control portion 506 and is configured to allow the active device in each group to be specified. Optionally, the storage 508 can be further configured to keep track of redundant (i.e. back-up) devices and, as a further option, can be configured to specify the hierarchy or ordering for bringing on-line the remaining devices in the group if needed.
For example, Table 1 shows a simple table that can be employed for groups of device pairs. Each pair has a group address or identifier that uniquely identifies, directly or S indirectly, each discrete group. A single bit is used to designate the active device, for example, with a binary 0 representing the first device in the group and a binary 1 representing the second device in the group.
Group AddressActive Device Xo '1'A13LE 1 Table 2 shows an alternative arrangement for identifying the active device in the storage. As with Table 1, an address or identifier uniquely identifies the particular group.
Associated with that address is a rivo-bit binary number, where each bit corresponds to one device in the group and is used to signify whether that device is to be active.
Group AddressActive Device XiXo For example, a bit pattern of 00 would specify that neither device is active.
Bit patterns of O1 or 10 would indicate that one or the other device in the pair is active.
Depending upon the particular implementation, a bit pattern of 11 could, for example, be used to activate both devices for some special case or could simply be an invalid state.
Table 3 shows a similar arrangement for a chip having groups made up of four devices. In this case, a similar two bit binary number is used except, the actual number in binary is used to indicate the active device.
Group AddressActive Device X~Xo For example, a 00 would indicate that the first device in the group is active, a O1 would indicate the second device in the group is active. A 10 would indicate that the third device is active and a 11 would indicate that the fourth device is active.
Table 4 shows a more complex arrangement for keeping track of the active devices in a particular array having individual four device groups. As shown Table 4 includes an address as noted above. In addition, an eight-bit binary number (X,XoA~AoB~BoC~Co) is used to identify the particular laser device in the group that is the primary (i.e. active) device as well as a hierarchy for the remaining devices in the group.
Group Primary SecondaryTertiaryQuartic AddressDevice Device Device Device XIXo A~Ao BIBo C,Co l For example, for a particular address, an entry of 01110010 would indicate that the second device (O1) is active. In the event that device was unusable or failed, the next device to be brought on-line is the fourth device. If that device were to fail, the next devices brought on-line thereafter would be, in order, the first followed by the third.
As can be appreciated, there are numerous ways other ways to identify active devices and/or specify alternative devices, either by employing some variant or combination of the above examples, or creating some other methodology, for example, by designating each laser with a unique address (irrespective of its group) and maintaining a list of the addresses for the lasers in each group in the order they are to be brought on line or providing space for settings for each laser, such as bias and modulation, and filling the setting information in for active lasers and/or setting the bias and/or modulation settings to zero and/or an invalid value to deactivate a laser.
In an alternative implementation, involving no storage for device selection, the devices incorporate fusible links that can be used to bring a device on- or off line. For example, each device may incorporate two fusible links. Initially, neither link is blown so the device is inactive but available. To bring a device on line, circuitry is activated that causes a particular link to blow and renders the device active. In the event that device dies some time in the future, other circuitry can be enabled to blow the remaining link, rendering the device inactive. A redundant device in the group can then be brought on-line by blowing the first link for that redundant device in a similar manner.
Still other alternative implementations use a combination of storage and hard wiring or fusible links to accomplish the functions of the control and/or storage.
FIG. 6 shows an opto-electronic device of the type shown in FIG. 5 in greater detail and constructed according to the principles of the invention. As shown, the detector portion 604 is made up of 36 individual detectors and the laser portion 602 is made up of 36 pairs of redundant lasers. As shown, the individual lasers 606, 608 in a group 610 are separated by device trenches 612 and the groups are separated from each other by grouping trenches 614.
In addition, there are available areas 616 between adjacent rows of the paired redundant lasers. Depending upon the particular implementation, those areas may be wholly unused, may be occupied by lasers of other wavelengths than those of the redundant pair, or may represent additional lasers of the same type as the redundant pairs which have been disabled for one reason or another.
FIG. 7 shows an opto-electronic chip 700 similar to that of FIG. 6 except that the array has been patterned as if four discrete devices were present to make up a group 702.
However, each group contains only two lasers 704, 706.
FIG. 8 shows a chip 800 similar to the chip of FIG. 6 except that each individual group 802 is now made up of four individual lasers 804, 806, 808, 810.
FIG. 9 shows a chip 900 like the device of FIG. 5 but having pairs 902 of redundant photodetectors. As shown, the photodetectors are grouped, like the lasers of FIG. 6, by grouping trenches 904 and individual photo detectors 906, 908 within a group are separated by device trenches 910.
It is important to note in connection with redundant detectors, that the use of redundant detectors will require that either some additional device be used to redirect the incident light from one detector to the other detector in order to switch between them.
Alternatively, the light can be defocused or defracted so as to be incident on all pertinent devices on both (in this case) as required. As should be apparent however, if redundant detectors are used and no light redirection is provided the system must be capable of accepting the losses due to such defocusing or defracting because the amount of incident light will be reduced exponentially as it is defocused to a larger and larger area to accommodate a larger number of redundant devices or a large pitch among them.
FIG. 10 shows a chip 1000 having an array 1002 similar to the array of FIG. 9 except that the array of FIG. 10 incorporates four redundant detectors 1004, 1006, 1008, 1010 per group.
Having shown a number of functional variants according to the invention, some examples of aspects usable for specific implementations will now be provided.
FIG. 11A shows one functional example of a circuitry arrangement for selecting from among two or more redundant devices according to the invention. In variants according to this example, a common data signal source 1102 is connected to all of the lasers 1104 in a group. As shown two or more lasers are in the group. A multiplexor 1106 (for 1 -to- 1 connections) or a selector (for 1 -to- 1 or more connections) is inserted between the power source 1108 for the lasers and the lasers themselves. The control information (whether bit based or bias/modulation based) is used by the control portion 1110 to select which laser receives power. Alternatively, in some variants, the multiplexor can be replaced with a selector that can select any one or more of the lasers.
FIG. 11B shows another functional example of a circuitry arrangement from among two or more redundant devices according to the invention. In variants according to this example, a signal source 1 I 12 is amplified by an amplifier 1114 and connected to the lasers 1106 via a multiplexor (for 1-to-1 connections) or a selector (for 1-to-1 or more connections).
The multiplexor 1106 or selector is controlled in a similar manner to FIG. 1 1A.
FIG. 12 functionally shows a communication system including an opto-electronic transceiver 1200 incorporating the invention. As shown, the transceiver 1200 includes a chip 1202 incorporating redundant lasers 1204 in accordance with the invention. The transceiver 1200 is arranged so that each pair of lasers 1204 is coupled to a common fiber 1206. As shown, optical waveguides 1208 shaped like a "Y", are used to guide laser light from either laser 1210 in the pair to a common fiber 1206. In other variants, other forms of waveguides, or microlenses, gratings, fused fibers, etc., are used to couple the two or more lasers to a common fiber, the particular coupling method used being irrelevant to understanding the invention.
The transceiver 1200 also includes an electronic interface 1212 through which electrical signals, for example digital data can be received and sent.
Depending upon the particular set up, the transceiver 1200 may be constructed to convert received digital signals into optical signals to be transmitted over one or more fibers using the lasers, to a receiver 1214, which may be a standalone unit or be part of another transceiver, having photodetectors 1216. Additionally or alternatively, the transceiver 1200 may use those digital signals as control signals and/or receive the signals for use as in any conventional electro-optical transceiver. Similarly, the transceiver 1200 is constructed to detect incident light received on its detectors 1218 and convert that light to digital signals that are then output via the electronic interface in a conventional manner.
Advantageously, further variants can be constructed for automatic failover.
FIG. 13 is a functional block diagram of one example way to integrate automatic failover.
As shown, a group 1300 is made up of two lasers 1302, 1304 coupled to a common fiber, for example, a "cone" or "funnel" shaped waveguide 1305, that is common to both lasers 1302, 1304. The controller 1306 selects which laser is active by outputting a logical one or zero. A sensor 1308 monitors the output of the active laser, for example via sampling the output power of the laser when in use, and feeds the result back to a failover controller 1310, which may or may not be part of the controller 1306 but is functionally shown separately for purposes of understanding. The failover controller 1310 is used to determine if the active laser should be switched out in favor of another laser in the group based upon some value related to the performance of the laser - in this case output power. Depending upon the particular implementation, any of the many different known techniques for determining if a value is at a limit or within a range can be used. For example, a comparator may be used to directly or logically compare the sample to a threshold value, a trigger can be set to fire when the sample falls below a threshold, etc. . .
If, at some point, the laser power falls below the specified limit or goes outside the desired range, that laser will be deactivated in favor of another laser in the group using one of the techniques noted above. For example, as shown, the failover controller 1310 is connected to the storage 1312 so that if a failover for a laser is required, the failover controller 1310 changes the value in the storage 1312. That causes the controller 1306 to de-activate the one laser 1302 in favor of the backup laser 1304.
Depending upon the particular implementation, it may be desirable include circuitry or stored information such that, if a substitution of one device for another has occurred (whether automatically or manually) the "bad" device can be designated as such to prevent a switch back to the bad device if the backup device fails.
It should be understood that, although described largely in connection with an optical transceiver, the invention may be straightforwardly employed in an optical transmitter module or an optical receiver module, there being no need for any particular implementation to have two different types of devices (i.e. transmitters and receivers) to be present in the same unit to use the invention.
Moreover, it should be understood that the invention may be straightforwardly employed with any type of laser device, i.e. surface emitting lasers, distributed feedback (DFB) lasers, Distributed Bragg Reflector (DBR) lasers and/or any type of photodetectors.
Thus, while we have shown and described various examples employing the invention, S it should be understood that the above description is only representative of illustrative embodiments. For the convenience of the reader, the above description has focused on a representative sample of all possible embodiments, a sample that teaches the principles of the invention. The description has not attempted to exhaustively enumerate all possible variations. That alternate embodiments may not have been presented for a specific portion of the invention, or that further undescribed alternate embodiments or other combinations of described portions may be available, is not to be considered a disclaimer of those alternate embodiments. It can be appreciated that many of those undescribed embodiments are within the literal scope of the following claims, and others are equivalent.
Claims (55)
1. An optical module comprising:
multiple optical devices, at least two of the multiple optical devices sharing a common contact defining a group, each of the at least two of the multiple optical devices in the group being individually selectable relative to others in the group, and a controller, coupled to the multiple optical devices such that the controller can select which of the at least two optical devices in the group will be active at a given time.
multiple optical devices, at least two of the multiple optical devices sharing a common contact defining a group, each of the at least two of the multiple optical devices in the group being individually selectable relative to others in the group, and a controller, coupled to the multiple optical devices such that the controller can select which of the at least two optical devices in the group will be active at a given time.
2. The optical module of claim 1 wherein the at least two of the multiple optical devices comprise lasers.
3. The optical module of claim 2 wherein the lasers comprise top emitting lasers.
4. The optical module of claim 2 wherein the lasers comprise bottom emitting lasers.
5. The optical module of claim 2 wherein the lasers comprise distributed Bragg reflector lasers.
6. The optical module of claim 2 wherein the lasers comprise distributed feedback lasers.
7. The optical module of claim 1 wherein the at least two of the multiple optical devices comprise photodetectors.
8. The optical module of claim 7 wherein the photodetectors comprise top receiving photodetectors.
9. The optical module of claim 7 wherein the photodetectors comprise bottom receiving photodetectors.
10. The optical module of claim 1 wherein the multiple optical devices comprise lasers and photodetectors.
11. The optical module of claim 1 further comprising memory configured to store activation information for the at least two optical devices.
12. The optical module of claim 1 further comprising redundancy selection circuitry.
13. An optical transceiver comprising:
multiple lasers, multiple detectors, storage, a controller coupled to the storage, and an interface via which an optical fiber can be coupled to at least two of the lasers or at least two of the detectors, the number of lasers being unequal to the number of detectors, the storage being configured to identify to the controller an optical device, from among a grouped set of optical devices, that will be an active optical device, the grouped set being defined by a grouping trench, and each optical device in the group sharing a common electrical contact.
multiple lasers, multiple detectors, storage, a controller coupled to the storage, and an interface via which an optical fiber can be coupled to at least two of the lasers or at least two of the detectors, the number of lasers being unequal to the number of detectors, the storage being configured to identify to the controller an optical device, from among a grouped set of optical devices, that will be an active optical device, the grouped set being defined by a grouping trench, and each optical device in the group sharing a common electrical contact.
14. An optical transceiver comprising:
at least two optical devices of a first type configured for coupling to a single optical fiber;
an optical device of a second type different from the first type and configured for coupling to a second optical fiber, the at least two optical devices of the first type being related to each other by a common connection such that they can each receive a single source signal and are individually selectable for activation a given time.
at least two optical devices of a first type configured for coupling to a single optical fiber;
an optical device of a second type different from the first type and configured for coupling to a second optical fiber, the at least two optical devices of the first type being related to each other by a common connection such that they can each receive a single source signal and are individually selectable for activation a given time.
15. The optical transceiver of claim 14 wherein the at least two optical devices of the first type comprise lasers.
16. The optical transceiver of claim 15 wherein the lasers comprise top emitting lasers.
\
\
17. The optical transceiver of claim 15 wherein the lasers comprise bottom emitting lasers.
18. The optical transceiver of claim 15 wherein the lasers comprise distributed Bragg reflector lasers.
19. The optical transceiver of claim 15 wherein the lasers comprise distributed feedback lasers.
20. The optical transceiver of claim 14 wherein the at least two optical devices of the first type comprise photodetectors.
21. The optical transceiver of claim 20 wherein the photodetectors comprise top receiving photodetectors.
22. The optical transceiver of claim 20 wherein the photodetectors comprise bottom receiving photodetectors.
23. The optical transceiver of claim 14 wherein the multiple optical devices comprise lasers and photodetectors.
24. The optical transceiver of claim 14 further comprising memory configured to store activation information for the at least two optical devices.
25. The optical transceiver of claim 14 further comprising redundancy selection circuitry.
26. An optical chip comprising:
a group of optical devices arranged for coupling to a single common optical fiber, the optical devices being selectable based upon an active indication, such that one of the optical devices in the group will be an active device and another of the optical devices in the group will be a backup optical device, the active device and the backup optical device being individually selectable such that, if the active device fails, the active device will be deselected and the backup optical device will be selected for use in place of the active device as a new active device.
a group of optical devices arranged for coupling to a single common optical fiber, the optical devices being selectable based upon an active indication, such that one of the optical devices in the group will be an active device and another of the optical devices in the group will be a backup optical device, the active device and the backup optical device being individually selectable such that, if the active device fails, the active device will be deselected and the backup optical device will be selected for use in place of the active device as a new active device.
27. The optical chip of claim 26 further comprising:
storage configured to store the active indication.
storage configured to store the active indication.
28. The optical chip of claim 26 wherein the group of optical devices comprise lasers.
29. The optical chip of claim 26 wherein the group of optical devices comprise photodetectors.
30. The optical chip of claim 26 wherein the common connection is a substrate.
31. The optical chip of claim 26 wherein the group of optical devices are related by a grouping trench.
32. The optical chip of claim 26 further comprising multiple fusible links and wherein the active device is determined by a state of at least one fusible link.
33. A method of creating an optical chip having redundant devices for use in an opto-electronic unit comprising:
growing active portions of multiple optical devices on a wafer using a semiconductor material, processing the wafer to create complete optical devices, patterning the semiconductor material to create individual optical devices, grouping the devices by forming grouping trenches in the wafer around sets of at least two of the individual devices; and connecting each of the at least two devices to a control circuit such that, common data can be received by any of the at least two devices but the common data will only be handled by a device of the at least two devices in the group that is an active device.
growing active portions of multiple optical devices on a wafer using a semiconductor material, processing the wafer to create complete optical devices, patterning the semiconductor material to create individual optical devices, grouping the devices by forming grouping trenches in the wafer around sets of at least two of the individual devices; and connecting each of the at least two devices to a control circuit such that, common data can be received by any of the at least two devices but the common data will only be handled by a device of the at least two devices in the group that is an active device.
34. The method of claim 33 further comprising:
storing data that identified the device of the at least two devices in the group that is the active device.
storing data that identified the device of the at least two devices in the group that is the active device.
35. A method of recovering from an optical device failure in an optical module having multiple optical devices, comprising:
identifying which of the multiple optical devices is a backup for a failed optical device;
deactivating the failed optical device; and activating the backup optical device.
identifying which of the multiple optical devices is a backup for a failed optical device;
deactivating the failed optical device; and activating the backup optical device.
36. The method of claim 35 further comprising:
monitoring an output of a laser to identify the optical device failure.
monitoring an output of a laser to identify the optical device failure.
37. The method of claim 35 wherein the identifying further comprises accessing data in a memory correlating the optical devices with activity information.
38. The method of claim 35 wherein the deactivating comprises changing a value, associated with the failed optical device, stored in a memory.
39. The method of claim 35 wherein the deactivating comprises blowing a fusible link for the failed optical device.
40. The method of claim 35 wherein the activating comprises changing a value, associated with the backup optical device, stored in a memory.
41. The method of claim 35 wherein the activating comprises blowing a fusible link for the backup optical device.
42. An optical transceiver comprising:
a number of detectors;
a number of transmitters, at least some of the transmitters being redundant for others of the transmitters; and a controller, coupled to at least the transmitters that controls which of the number of transmitters are active transmitters and which of the number of transmitters are redundant transmitters.
a number of detectors;
a number of transmitters, at least some of the transmitters being redundant for others of the transmitters; and a controller, coupled to at least the transmitters that controls which of the number of transmitters are active transmitters and which of the number of transmitters are redundant transmitters.
43. The optical transceiver of claim 42 wherein the number of transmitters is at least twice the number of receivers.
44. The optical transceiver of claim 42 wherein the number of transmitters is equal to the number of receivers.
45. The optical transceiver of claim 42 wherein the number of transmitters is three times the number of receivers.
46. The optical transceiver of claim 42 wherein the number of transmitters is four times the number of receivers.
47. The optical transceiver of claim 42 wherein the number of transmitters comprises at least two groups.
48. The optical transceiver of claim 47 wherein one of the two groups comprises two lasers.
49. The optical transceiver of claim 47 wherein one of the two groups comprises three lasers, and wherein at least one of the three lasers is a backup laser.
50. The optical transceiver of claim 49 wherein exactly one of the three lasers is the backup laser.
51. The optical transceiver of claim 49 wherein exactly two of the three lasers are the backup laser.
52. A communications network comprising:
a first transmitter comprising a number of usable channels, a first receiver, and optical fibers connecting the first transmitter to the first receiver, the first transmitter further comprising multiple lasers, at least some of the multiple lasers being selectable as either active lasers or backup lasers, the multiple lasers being controllable such that, if a specific channel is in use by an active laser and a laser failure occurs for that channel, a redundant laser can be substituted for the active laser and, after the substitution, the specific channel can be used using the redundant laser.
a first transmitter comprising a number of usable channels, a first receiver, and optical fibers connecting the first transmitter to the first receiver, the first transmitter further comprising multiple lasers, at least some of the multiple lasers being selectable as either active lasers or backup lasers, the multiple lasers being controllable such that, if a specific channel is in use by an active laser and a laser failure occurs for that channel, a redundant laser can be substituted for the active laser and, after the substitution, the specific channel can be used using the redundant laser.
53. The communications network of claim 52 wherein the first transmitter further comprises programmable laser selection control.
54. The communications network of claim 52 wherein the first transmitter further comprises transmitter failure detection sensor.
55. The communications network of claim 52 further comprising an automatic failover circuit.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/896,797 US7831151B2 (en) | 2001-06-29 | 2001-06-29 | Redundant optical device array |
US09/896,797 | 2001-06-29 | ||
PCT/US2002/020112 WO2003003619A2 (en) | 2001-06-29 | 2002-06-21 | Redundant optical device array |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2447373A1 true CA2447373A1 (en) | 2003-01-09 |
Family
ID=25406860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002447373A Abandoned CA2447373A1 (en) | 2001-06-29 | 2002-06-21 | Redundant optical device array |
Country Status (6)
Country | Link |
---|---|
US (1) | US7831151B2 (en) |
EP (1) | EP1391061A4 (en) |
KR (1) | KR100912124B1 (en) |
CN (1) | CN1599992A (en) |
CA (1) | CA2447373A1 (en) |
WO (1) | WO2003003619A2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7116694B2 (en) * | 2002-12-11 | 2006-10-03 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Transmitter array with pixel element that has primary semiconductor laser and at least one secondary semiconductor laser |
US7125733B2 (en) | 2004-01-13 | 2006-10-24 | Infineon Technologies Ag | Method for producing an optical emission module having at least two vertically emitting lasers |
US20050191052A1 (en) * | 2004-02-26 | 2005-09-01 | Karl Schrodinger | Optical emission module |
US7184622B2 (en) * | 2005-03-15 | 2007-02-27 | Lockheed Martin Corporation | Integrated volume holographic optical circuit apparatus |
US20060251421A1 (en) * | 2005-05-09 | 2006-11-09 | Ben Gurion University Of The Negev, Research And Development Authority | Improved free space optical bus |
CA2550369A1 (en) * | 2005-06-17 | 2006-12-17 | Virtek Vision International Inc. | Multiple head laser projector and method |
IES20050587A2 (en) * | 2005-09-08 | 2007-02-21 | Eblana Photonics Ltd | Multi-stripe laser diode designs which exhibit a high degree of manafacturability |
US9297878B2 (en) * | 2006-04-07 | 2016-03-29 | Alcatel Lucent | Light source orientation detector |
US7801442B2 (en) * | 2006-12-28 | 2010-09-21 | Intel Corporation | Redundant channel implementation to extend optical transceiver lifetime and reliability |
US8041210B2 (en) * | 2007-04-30 | 2011-10-18 | Finisar Corporation | Parallel high-speed communication links with redundant channel architectures |
CN102375185B (en) * | 2010-08-20 | 2013-11-13 | 国碁电子(中山)有限公司 | Optical transceiver and manufacturing method thereof |
US9249014B2 (en) * | 2012-11-06 | 2016-02-02 | Infineon Technologies Austria Ag | Packaged nano-structured component and method of making a packaged nano-structured component |
US9310576B1 (en) | 2014-11-26 | 2016-04-12 | International Business Machines Corporation | Integrated circuit having redundant optical signal paths and method of creating same |
US9876329B2 (en) | 2015-08-03 | 2018-01-23 | Technische Universiteit Eindhoven | One plus one redundant optical interconnects with automated recovery from light source failure |
KR102338923B1 (en) | 2017-07-06 | 2021-12-14 | 삼성전자주식회사 | Photonic integrated circuit and optical transmitter |
US10812181B2 (en) * | 2018-11-16 | 2020-10-20 | Ii-Vi Delaware Inc. | Light source redundancy in optical communication devices |
CN112605068A (en) * | 2020-12-15 | 2021-04-06 | 湖南大学 | Irradiation-resistant variable-focus laser cleaning device and using method |
CN113985536B (en) * | 2021-10-28 | 2023-06-13 | 中国科学院半导体研究所 | Optoelectronic integrated device and preparation method thereof |
CN114488398A (en) * | 2022-01-27 | 2022-05-13 | Nano科技(北京)有限公司 | Redundant silicon-based photoelectric integrated chip |
US20230412265A1 (en) * | 2022-06-14 | 2023-12-21 | Mellanox Technologies, Ltd. | Transceiver module |
Family Cites Families (249)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2152462B1 (en) | 1971-09-16 | 1974-09-06 | Thomson Csf | |
US4202007A (en) * | 1978-06-23 | 1980-05-06 | International Business Machines Corporation | Multi-layer dielectric planar structure having an internal conductor pattern characterized with opposite terminations disposed at a common edge surface of the layers |
US4230385A (en) | 1979-02-06 | 1980-10-28 | Elfab Corporation | Printed circuit board, electrical connector and method of assembly |
JPS55162640A (en) * | 1979-06-06 | 1980-12-18 | Kokusai Denshin Denwa Co Ltd <Kdd> | Light source redundancy system in optical communication |
GB2062891B (en) | 1979-10-31 | 1985-07-24 | Bunker Ramo | Fibre optic connector for high density appilications and method of manufacturing fibre optic connectors |
US4403139A (en) * | 1981-04-20 | 1983-09-06 | Bell Telephone Laboratories, Incorporated | Redundant light source circuit |
US5363463A (en) * | 1982-08-06 | 1994-11-08 | Kleinerman Marcos Y | Remote sensing of physical variables with fiber optic systems |
US4533833A (en) | 1982-08-19 | 1985-08-06 | At&T Bell Laboratories | Optically coupled integrated circuit array |
US4481403A (en) | 1983-03-04 | 1984-11-06 | Honeywell Inc. | Temperature control of solid state circuit chips |
US4934785A (en) | 1983-08-29 | 1990-06-19 | American Telephone And Telegraph Company | Optical fiber connector |
FR2556539B1 (en) * | 1983-12-08 | 1988-05-13 | Telecommunications Sa | DETECTION DEVICE WITH PHOTOVOLTAIC DIODES |
US5991479A (en) | 1984-05-14 | 1999-11-23 | Kleinerman; Marcos Y. | Distributed fiber optic sensors and systems |
US4719498A (en) * | 1984-05-18 | 1988-01-12 | Fujitsu Limited | Optoelectronic integrated circuit |
US5259052A (en) | 1984-06-08 | 1993-11-02 | Amp Incorporated | High precision optical fiber connectors |
US4741595A (en) * | 1984-07-13 | 1988-05-03 | Hitachi, Ltd. | Optical transmission device |
JPS6154756A (en) * | 1984-08-25 | 1986-03-19 | Fuji Electric Corp Res & Dev Ltd | Contact type image sensor |
DE3634187A1 (en) | 1986-10-03 | 1988-04-07 | Siemens Ag | Optical arrangement for injecting light into a 50 mu m gradient fibre |
US4744627A (en) * | 1986-11-03 | 1988-05-17 | General Electric Company | Optical fiber holder |
JPS63165603U (en) | 1987-04-20 | 1988-10-28 | ||
US4842360A (en) | 1987-06-18 | 1989-06-27 | Summit Technology, Inc. | High energy laser-to-waveguide coupling devices and methods |
US4815805A (en) * | 1987-11-12 | 1989-03-28 | Raychem Corp. | Dynamic range reduction using mode filter |
FR2639773B1 (en) * | 1988-11-25 | 1994-05-13 | Alcatel Nv | TUNABLE SEMICONDUCTOR LASER |
US4990803A (en) * | 1989-03-27 | 1991-02-05 | Analog Devices, Inc. | Logarithmic amplifier |
US5091018A (en) * | 1989-04-17 | 1992-02-25 | The Boeing Company | Tandem photovoltaic solar cell with III-V diffused junction booster cell |
JPH0831617B2 (en) * | 1990-04-18 | 1996-03-27 | 三菱電機株式会社 | Solar cell and manufacturing method thereof |
US5175928A (en) * | 1990-06-11 | 1993-01-05 | Amp Incorporated | Method of manufacturing an electrical connection assembly |
US5149958A (en) | 1990-12-12 | 1992-09-22 | Eastman Kodak Company | Optoelectronic device component package |
US5136152A (en) | 1990-12-19 | 1992-08-04 | Hoetron, Inc. | Hybrid optical pickup with integrated power emission and reading photodetectors |
US5268786A (en) | 1991-03-15 | 1993-12-07 | Mitsubishi Denki Kabushiki Kaisha | Optical fiber amplifier and its amplification method |
US5214730A (en) * | 1991-05-13 | 1993-05-25 | Nippon Telegraph And Telephone Corporation | Multifiber optical connector plug with low reflection and low insertion loss |
US5185846A (en) * | 1991-05-24 | 1993-02-09 | At&T Bell Laboratories | Optical fiber alignment apparatus including guiding and securing plates |
US5135590A (en) | 1991-05-24 | 1992-08-04 | At&T Bell Laboratories | Optical fiber alignment method |
AU649162B2 (en) * | 1991-08-17 | 1994-05-12 | Nippon Telegraph & Telephone Corporation | Optical connector |
US5241610A (en) * | 1991-09-03 | 1993-08-31 | Scientific-Atlanta, Inc. | Optical switching in a fiber communication system and method using same |
JPH0572444A (en) | 1991-09-17 | 1993-03-26 | Fujitsu Ltd | Multifiber optical connector |
DE69226150T2 (en) * | 1991-11-05 | 1999-02-18 | Hsu Fu Chieh | Redundancy architecture for circuit module |
JP3333239B2 (en) * | 1991-12-05 | 2002-10-15 | 株式会社東芝 | Variable gain circuit |
US5212707A (en) * | 1991-12-06 | 1993-05-18 | Mcdonnell Douglas Corporation | Array of diffraction limited lasers and method of aligning same |
US5266794A (en) | 1992-01-21 | 1993-11-30 | Bandgap Technology Corporation | Vertical-cavity surface emitting laser optical interconnect technology |
EP0554672B1 (en) | 1992-02-04 | 1997-12-29 | Matsushita Electric Industrial Co., Ltd. | Fibre optic wavelength selecting device |
US5299222A (en) * | 1992-03-11 | 1994-03-29 | Lightwave Electronics | Multiple diode laser stack for pumping a solid-state laser |
JP3105624B2 (en) * | 1992-03-30 | 2000-11-06 | 日本碍子株式会社 | Multi-core connector and manufacturing method thereof |
US5269453A (en) | 1992-04-02 | 1993-12-14 | Motorola, Inc. | Low temperature method for forming solder bump interconnections to a plated circuit trace |
DE4211899C2 (en) | 1992-04-09 | 1998-07-16 | Daimler Benz Aerospace Ag | Microsystem laser arrangement and microsystem laser |
US5243681A (en) | 1992-04-13 | 1993-09-07 | Amp Incorporated | Aperture disk attenuator for laser diode connector |
JP2986613B2 (en) | 1992-05-27 | 1999-12-06 | 株式会社日立製作所 | Optical transmission module |
US5408319A (en) * | 1992-09-01 | 1995-04-18 | International Business Machines Corporation | Optical wavelength demultiplexing filter for passing a selected one of a plurality of optical wavelengths |
DE4241045C1 (en) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Process for anisotropic etching of silicon |
DE4241453C2 (en) | 1992-12-09 | 1995-04-20 | Daimler Benz Ag | Process for plasma etching trenches in silicon |
US5319655A (en) | 1992-12-21 | 1994-06-07 | Xerox Corporation | Multiwavelength laterally-injecting-type lasers |
JPH06237016A (en) | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | Optical fiber module and manufacture thereof |
US5359208A (en) | 1993-02-26 | 1994-10-25 | Nippon Sheet Glass Co., Ltd. | Chip package with microlens array |
JP3333843B2 (en) | 1993-03-11 | 2002-10-15 | 日本碍子株式会社 | Optical axis alignment method of optical collimator array |
US5548675A (en) | 1993-04-02 | 1996-08-20 | The Furukawa Electric Co., Ltd. | Multifiber connector, a method of manufacturing the same, and a construction for connecting the multifiber connector to an optical device |
US5603847A (en) * | 1993-04-07 | 1997-02-18 | Zycon Corporation | Annular circuit components coupled with printed circuit board through-hole |
US5416624A (en) * | 1993-05-17 | 1995-05-16 | Siemens Aktiengesellschaft | Bidirectional optical transmission and reception arrangement |
US6048751A (en) * | 1993-06-25 | 2000-04-11 | Lucent Technologies Inc. | Process for manufacture of composite semiconductor devices |
US5385632A (en) * | 1993-06-25 | 1995-01-31 | At&T Laboratories | Method for manufacturing integrated semiconductor devices |
US5337384A (en) | 1993-07-06 | 1994-08-09 | At&T Bell Laboratories | Optical fiber connector |
US5555333A (en) | 1993-07-12 | 1996-09-10 | Ricoh Company, Ltd. | Optical module and a fabrication process thereof |
JPH0738205A (en) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | Surface-light emitting laser diode array, driving method thereof, photodetector, photodetector array, space light connecting system and multiple-wavelength optical communication system |
US5488504A (en) * | 1993-08-20 | 1996-01-30 | Martin Marietta Corp. | Hybridized asymmetric fabry-perot quantum well light modulator |
US5764392A (en) | 1993-10-19 | 1998-06-09 | International Business Machines Corporation | Access control system for a multi-channel transmission ring |
US5394498A (en) * | 1993-11-05 | 1995-02-28 | At&T Corp. | Optical fiber array and process of manufacture |
US5475701A (en) | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
US5394495A (en) * | 1994-02-22 | 1995-02-28 | E. I. Du Pont De Nemours And Company | Optical waveguide connectors and methods of making same |
US5606572A (en) | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
US5502333A (en) | 1994-03-30 | 1996-03-26 | International Business Machines Corporation | Semiconductor stack structures and fabrication/sparing methods utilizing programmable spare circuit |
US5729038A (en) * | 1995-12-15 | 1998-03-17 | Harris Corporation | Silicon-glass bonded wafers |
JPH07281053A (en) * | 1994-04-11 | 1995-10-27 | Mitsui Petrochem Ind Ltd | Fiber photocoupler |
US5500540A (en) * | 1994-04-15 | 1996-03-19 | Photonics Research Incorporated | Wafer scale optoelectronic package |
US5470787A (en) | 1994-05-02 | 1995-11-28 | Motorola, Inc. | Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same |
US6680792B2 (en) | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
BE1008384A3 (en) | 1994-05-24 | 1996-04-02 | Koninkl Philips Electronics Nv | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITH SEMICONDUCTOR ELEMENTS MADE IN A LAYER SEMICONDUCTOR MATERIAL APPLIED ON A BEARING PLATE. |
US5664039A (en) | 1994-06-08 | 1997-09-02 | The Whitaker Corporation | High density fiber ferrules and connectors |
US5472914A (en) | 1994-07-14 | 1995-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer joined optoelectronic integrated circuits and method |
US5550942A (en) | 1994-07-18 | 1996-08-27 | Sheem; Sang K. | Micromachined holes for optical fiber connection |
US5636052A (en) | 1994-07-29 | 1997-06-03 | Lucent Technologies Inc. | Direct view display based on a micromechanical modulation |
US5523628A (en) | 1994-08-05 | 1996-06-04 | Hughes Aircraft Company | Apparatus and method for protecting metal bumped integrated circuit chips during processing and for providing mechanical support to interconnected chips |
US5400429A (en) * | 1994-08-08 | 1995-03-21 | The United States Of America As Represented By The Secretary Of The Navy | Method for making fiber-optic bundle collimator assembly |
US5473716A (en) | 1994-08-29 | 1995-12-05 | Motorola, Inc. | Fiber bundle interconnect and method of making same |
US5511085A (en) * | 1994-09-02 | 1996-04-23 | Light Solutions Corporation | Passively stabilized intracavity doubling laser |
US5544268A (en) * | 1994-09-09 | 1996-08-06 | Deacon Research | Display panel with electrically-controlled waveguide-routing |
US5477933A (en) | 1994-10-24 | 1995-12-26 | At&T Corp. | Electronic device interconnection techniques |
US5491712A (en) * | 1994-10-31 | 1996-02-13 | Lin; Hong | Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser |
US5598965A (en) * | 1994-11-03 | 1997-02-04 | Scheu; William E. | Integrated circuit, electronic component chip removal and replacement system |
US5535231A (en) | 1994-11-08 | 1996-07-09 | Samsung Electronics Co., Ltd. | Optoelectronic circuit including heterojunction bipolar transistor laser and photodetector |
EP0713111A1 (en) | 1994-11-15 | 1996-05-22 | The Whitaker Corporation | Sealed multiposition fiber optic connector |
US5579426A (en) | 1994-11-18 | 1996-11-26 | Nec Research Institutes, Inc. | Fiber image guide based bit-parallel computer interconnect |
US5521734A (en) * | 1994-12-30 | 1996-05-28 | At&T Corp. | One-dimensional optical data arrays implemented within optical networks |
US5612968A (en) * | 1995-04-20 | 1997-03-18 | Bell Communications Research, Inc. | Redundant multi-wavelength laser arrays |
US5814889A (en) | 1995-06-05 | 1998-09-29 | Harris Corporation | Intergrated circuit with coaxial isolation and method |
US5608264A (en) * | 1995-06-05 | 1997-03-04 | Harris Corporation | Surface mountable integrated circuit with conductive vias |
US5568574A (en) | 1995-06-12 | 1996-10-22 | University Of Southern California | Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration |
US5635014A (en) | 1995-06-19 | 1997-06-03 | Gr Systems | Press apparatus and methods for fusing overlapped thermoplastic sheet materials |
JPH0964819A (en) | 1995-08-23 | 1997-03-07 | Fujitsu Ltd | Optical system |
JPH0964334A (en) | 1995-08-28 | 1997-03-07 | Toshiba Corp | Integrated element of light emitting element and external modulator |
JPH11514300A (en) * | 1995-10-06 | 1999-12-07 | ブラウン ユニバーシティ リサーチ ファウンデーション | Soldering methods and compounds |
JP2966329B2 (en) | 1995-10-11 | 1999-10-25 | 古河電気工業株式会社 | Multi-core connector |
US5978401A (en) | 1995-10-25 | 1999-11-02 | Honeywell Inc. | Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver |
US6174424B1 (en) * | 1995-11-20 | 2001-01-16 | Cirrex Corp. | Couplers for optical fibers |
US5613024A (en) * | 1995-12-21 | 1997-03-18 | Lucent Technologies Inc. | Alignment of optical fiber arrays to optical integrated circuits |
US5777761A (en) * | 1995-12-22 | 1998-07-07 | Mci Communications Corporation | System and method for photonic facility and line protection switching using wavelength translation |
US5912913A (en) * | 1995-12-27 | 1999-06-15 | Hitachi, Ltd. | Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser |
CA2166357C (en) * | 1995-12-29 | 2002-07-02 | Albert John Kerklaan | Infrared transceiver for an application interface card |
US5617492A (en) * | 1996-02-06 | 1997-04-01 | The Regents Of The University Of California | Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array |
US5743785A (en) * | 1996-04-04 | 1998-04-28 | Us Conec Ltd. | Polishing method and apparatus for preferentially etching a ferrule assembly and ferrule assembly produced thereby |
US5815621A (en) | 1996-05-23 | 1998-09-29 | Sumitomo Electric Industries, Ltd. | Optical fiber connector ferrule with die and method of manufacturing same |
US5912751A (en) * | 1996-05-28 | 1999-06-15 | Lucent Technologies Inc. | Fiber optic network using space and wavelength multiplexed data channel arrays |
US5965933A (en) | 1996-05-28 | 1999-10-12 | Young; William R. | Semiconductor packaging apparatus |
US5793116A (en) | 1996-05-29 | 1998-08-11 | Mcnc | Microelectronic packaging using arched solder columns |
US5992233A (en) | 1996-05-31 | 1999-11-30 | The Regents Of The University Of California | Micromachined Z-axis vibratory rate gyroscope |
US5751757A (en) * | 1996-07-01 | 1998-05-12 | Motorola, Inc. | VCSEL with integrated MSM photodetector |
US5761234A (en) | 1996-07-09 | 1998-06-02 | Sdl, Inc. | High power, reliable optical fiber pumping system with high redundancy for use in lightwave communication systems |
KR100219710B1 (en) * | 1996-07-30 | 1999-09-01 | 윤종용 | Metal coating optical fiber connecting method |
GB2316225A (en) * | 1996-08-06 | 1998-02-18 | Northern Telecom Ltd | Semiconductor photodetector packaging |
US5793789A (en) | 1996-08-20 | 1998-08-11 | Lucent Technologies Inc. | Detector for photonic integrated transceivers |
US5715270A (en) * | 1996-09-27 | 1998-02-03 | Mcdonnell Douglas Corporation | High efficiency, high power direct diode laser systems and methods therefor |
US5764405A (en) * | 1996-10-10 | 1998-06-09 | Tyco Submarine Systems Ltd. | Lossless optical transmission system architecture with non-failing optical amplifiers |
US6084848A (en) | 1996-11-11 | 2000-07-04 | Kabushiki Kaisha Toshiba | Two-dimensional near field optical memory head |
JP3326087B2 (en) | 1996-12-26 | 2002-09-17 | 明久 井上 | Ferrule for optical fiber connector and method of manufacturing the same |
US5914976A (en) | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
US5761350A (en) | 1997-01-22 | 1998-06-02 | Koh; Seungug | Method and apparatus for providing a seamless electrical/optical multi-layer micro-opto-electro-mechanical system assembly |
EP1959506A2 (en) | 1997-01-31 | 2008-08-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a semiconductor light-emitting device |
US20020141011A1 (en) | 1997-02-11 | 2002-10-03 | Green Alan E. | Optical free space signalling system |
JPH10247747A (en) | 1997-03-05 | 1998-09-14 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
US5877519A (en) * | 1997-03-26 | 1999-03-02 | Picolight Incoporated | Extended wavelength opto-electronic devices |
US5909294A (en) * | 1997-05-16 | 1999-06-01 | Lucent Technologies Inc. | Full-duplex wavelength division multiplexing system using single-device transceivers |
JPH10335383A (en) * | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | Producing method for semiconductor device |
EP0889338A1 (en) | 1997-06-30 | 1999-01-07 | The Whitaker Corporation | Ferrule of an optical connetor, use of the ferrule in an optical connector and method of fabricating of the ferrule |
US6070321A (en) | 1997-07-09 | 2000-06-06 | International Business Machines Corporation | Solder disc connection |
US6224780B1 (en) * | 1997-07-15 | 2001-05-01 | Kia Silverbrook | Method of manufacture of a radiant plunger electromagnetic ink jet printer |
JP3638075B2 (en) | 1997-07-29 | 2005-04-13 | 富士通株式会社 | circuit |
US6022760A (en) * | 1997-07-30 | 2000-02-08 | Motorola, Inc. | Integrated electro-optical package and method of fabrication |
JP4116133B2 (en) * | 1997-07-31 | 2008-07-09 | 株式会社東芝 | Temperature-dependent constant current generating circuit and optical semiconductor device driving circuit using the same |
US5886581A (en) * | 1997-08-05 | 1999-03-23 | Tektronix, Inc. | Automatic output offset control for a DC-coupled RF amplifier |
US6005262A (en) | 1997-08-20 | 1999-12-21 | Lucent Technologies Inc. | Flip-chip bonded VCSEL CMOS circuit with silicon monitor detector |
US6062740A (en) * | 1997-08-25 | 2000-05-16 | Sumitomo Electric Industries, Ltd. | Optical connector and method of making the same |
US5962846A (en) * | 1997-08-29 | 1999-10-05 | Lucent Technologies Inc. | Redundant linear detection arrays |
JPH11166935A (en) * | 1997-09-25 | 1999-06-22 | Canon Inc | Light probe for light detection or irradiation, near-field optical microscope provided with the probe, manufacture of the light probe and substrate used for its manufacture |
JP3184493B2 (en) | 1997-10-01 | 2001-07-09 | 松下電子工業株式会社 | Electronic device manufacturing method |
US5946130A (en) | 1997-10-03 | 1999-08-31 | Mcdonnell Douglas Corporation | Optical fiber amplifier network having a coherently combined output and high-power laser amplifier containing same |
JP3662402B2 (en) * | 1997-11-07 | 2005-06-22 | 三菱電機株式会社 | Optical semiconductor module |
JP3619036B2 (en) | 1997-12-05 | 2005-02-09 | キヤノン株式会社 | Method for manufacturing ink jet recording head |
KR100340665B1 (en) | 1997-12-31 | 2002-09-25 | 주식회사 머큐리 | Ultra-multiconnector ferrule for optical connector and method of inserting optical fiber in the same |
US6075710A (en) | 1998-02-11 | 2000-06-13 | Express Packaging Systems, Inc. | Low-cost surface-mount compatible land-grid array (LGA) chip scale package (CSP) for packaging solder-bumped flip chips |
US6055344A (en) | 1998-02-18 | 2000-04-25 | Hewlett-Packard Company | Fabrication of a total internal reflection optical switch with vertical fluid fill-holes |
US6049641A (en) * | 1998-02-24 | 2000-04-11 | Gemfire Corporation | Connection system for optical redundancy |
JPH11330609A (en) | 1998-03-11 | 1999-11-30 | Seiko Epson Corp | Surface-emission laser with monitor and manufacture thereof |
US6016067A (en) * | 1998-04-06 | 2000-01-18 | Intersil Corporation | Sample-and-hold circuit having reduced amplifier offset effects and related methods |
US6496624B1 (en) | 1998-04-14 | 2002-12-17 | Nippon Telegraph And Telephone Corporation | Optical waveguide device for optical wiring and manufacturing method therefor |
US6158644A (en) | 1998-04-30 | 2000-12-12 | International Business Machines Corporation | Method for enhancing fatigue life of ball grid arrays |
US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
US6046659A (en) * | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
US6097748A (en) | 1998-05-18 | 2000-08-01 | Motorola, Inc. | Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication |
US6018604A (en) * | 1998-05-26 | 2000-01-25 | Ja Laboratories, Inc. | Optical isolator using a beam aperture method |
US6328482B1 (en) | 1998-06-08 | 2001-12-11 | Benjamin Bin Jian | Multilayer optical fiber coupler |
US6011301A (en) * | 1998-06-09 | 2000-01-04 | Stmicroelectronics, Inc. | Stress reduction for flip chip package |
US6137930A (en) | 1998-07-08 | 2000-10-24 | Optical Switch Corporation | Method and apparatus for aligning optical fibers |
US7107666B2 (en) | 1998-07-23 | 2006-09-19 | Bh Electronics | Method of manufacturing an ultra-miniature magnetic device |
JP3997710B2 (en) * | 1998-08-07 | 2007-10-24 | 住友電気工業株式会社 | Ferrule for optical connector, mold for molding, manufacturing method for ferrule for optical connector, and inspection method for ferrule for optical connector |
DE19838430C2 (en) | 1998-08-24 | 2002-02-28 | Fraunhofer Ges Forschung | Method of making an array of photodetectors |
US6317235B1 (en) | 1998-08-28 | 2001-11-13 | Zilog, Inc. | Method and system for preventing burn-out of infrared transmitter diodes |
US6121576A (en) | 1998-09-02 | 2000-09-19 | Micron Technology, Inc. | Method and process of contact to a heat softened solder ball array |
US6775480B1 (en) * | 1998-09-10 | 2004-08-10 | Nortel Networks Limited | Free space optical interconnect system |
US6504975B1 (en) * | 1998-09-17 | 2003-01-07 | Matsushita Electric Industrial Co., Ltd. | Coupling lens and semiconductor laser module |
US6785447B2 (en) | 1998-10-09 | 2004-08-31 | Fujitsu Limited | Single and multilayer waveguides and fabrication process |
US6343171B1 (en) * | 1998-10-09 | 2002-01-29 | Fujitsu Limited | Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making |
US6553044B1 (en) * | 1998-10-20 | 2003-04-22 | Quantum Devices, Inc. | Method and apparatus for reducing electrical and thermal crosstalk of a laser array |
JP2000121889A (en) * | 1998-10-21 | 2000-04-28 | Nec Corp | Optical module and manufacture of optical module |
US6483862B1 (en) | 1998-12-11 | 2002-11-19 | Agilent Technologies, Inc. | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer |
JP3605629B2 (en) * | 1998-12-15 | 2004-12-22 | 富士通株式会社 | Light source redundancy switching method and wavelength division multiplex transmission apparatus by the method |
SG82591A1 (en) * | 1998-12-17 | 2001-08-21 | Eriston Technologies Pte Ltd | Bumpless flip chip assembly with solder via |
FR2788607B1 (en) | 1999-01-20 | 2001-12-21 | Cit Alcatel | EMERGENCY EQUIPMENT FOR MULTIPLEXED WAVELENGTH SOURCES |
US6318909B1 (en) | 1999-02-11 | 2001-11-20 | Agilent Technologies, Inc. | Integrated packaging system for optical communications devices that provides automatic alignment with optical fibers |
GB9903880D0 (en) * | 1999-02-19 | 1999-04-14 | Univ Southampton | Optical device |
US6246813B1 (en) | 1999-03-01 | 2001-06-12 | Jds Uniphase Corporation | Reliable low-cost dual fiber optical collimator |
US6438150B1 (en) | 1999-03-09 | 2002-08-20 | Telecordia Technologies, Inc. | Edge-emitting semiconductor laser having asymmetric interference filters |
JP3959662B2 (en) * | 1999-03-23 | 2007-08-15 | セイコーエプソン株式会社 | Optical signal transmission device and manufacturing method thereof |
US6160450A (en) | 1999-04-09 | 2000-12-12 | National Semiconductor Corporation | Self-biased, phantom-powered and feedback-stabilized amplifier for electret microphone |
JP2000307025A (en) | 1999-04-23 | 2000-11-02 | Matsushita Electric Ind Co Ltd | Electronic part, manufacture thereof, and electronic part package |
US6476445B1 (en) * | 1999-04-30 | 2002-11-05 | International Business Machines Corporation | Method and structures for dual depth oxygen layers in silicon-on-insulator processes |
JP2000349101A (en) * | 1999-06-07 | 2000-12-15 | Lintec Corp | Transfer tape and use method thereof |
US6419404B1 (en) * | 1999-07-01 | 2002-07-16 | The Regents Of The University Of California | Compact multiwavelength transmitter module for multimode fiber optic ribbon cable |
US6569343B1 (en) | 1999-07-02 | 2003-05-27 | Canon Kabushiki Kaisha | Method for producing liquid discharge head, liquid discharge head, head cartridge, liquid discharging recording apparatus, method for producing silicon plate and silicon plate |
US6304692B1 (en) * | 1999-09-03 | 2001-10-16 | Zolo Technologies, Inc. | Echelle grating dense wavelength division multiplexer/demultiplexer with two dimensional single channel array |
US6509992B1 (en) * | 1999-09-09 | 2003-01-21 | Nortel Networks Corporation | Free space optical interconnect system tolerant to misalignments and method of operation thereof |
US6153927A (en) | 1999-09-30 | 2000-11-28 | Intel Corporation | Packaged integrated processor and spatial light modulator |
US7245647B2 (en) * | 1999-10-28 | 2007-07-17 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode |
US6235354B1 (en) * | 1999-11-01 | 2001-05-22 | United Microelectronics Corp. | Method of forming a level silicon oxide layer on two regions of different heights on a semiconductor wafer |
WO2001042820A2 (en) | 1999-12-02 | 2001-06-14 | Teraconnect, Inc. | Method of making optoelectronic devices using sacrificial devices |
US6788895B2 (en) | 1999-12-10 | 2004-09-07 | Altera Corporation | Security mapping and auto reconfiguration |
US6292529B1 (en) | 1999-12-15 | 2001-09-18 | Analogic Corporation | Two-dimensional X-ray detector array for CT applications |
US6442306B1 (en) | 1999-12-21 | 2002-08-27 | Agere Systems Guardian Corp. | Self-aligned fiber optic connector for NxM arrays |
FR2805092A1 (en) * | 2000-02-10 | 2001-08-17 | Corning Inc | LASER SOURCE THAT CAN BE SELECTED BY MEMS |
JP3394947B2 (en) | 2000-02-24 | 2003-04-07 | 日東電工株式会社 | Adhesive tape and adhesive tape substrate |
JP3677429B2 (en) | 2000-03-09 | 2005-08-03 | Necエレクトロニクス株式会社 | Method of manufacturing flip chip type semiconductor device |
US20010051026A1 (en) | 2000-04-06 | 2001-12-13 | Steinberg Dan A. | Optical fiber ferrule made from dry etched parts |
US6530700B2 (en) * | 2000-04-21 | 2003-03-11 | Teraconnect, Inc. | Fiber optic connector |
US6614949B2 (en) * | 2000-04-21 | 2003-09-02 | Teraconnect, Inc. | Precision grid standoff for optical components on opto-electronic devices |
US6404542B1 (en) | 2000-07-10 | 2002-06-11 | Sdl, Inc. | Multiple emitter semiconductor laser pump source for scaling of pump power and generation of unpolarized light for light signal amplification |
US6763157B1 (en) * | 2000-05-09 | 2004-07-13 | Teraconnect, Inc. | Self aligning optical interconnect with multiple opto-electronic devices per fiber channel |
US6379053B1 (en) * | 2000-05-30 | 2002-04-30 | Infineon Technologies North America Corp. | Multi-fiber fiber optic connectors |
US6470123B1 (en) | 2000-07-18 | 2002-10-22 | Fiberguide Industries, Inc. | Large optical fiber array assembly and method |
AU2001294934A1 (en) * | 2000-09-29 | 2002-04-08 | Cielo Communications, Inc. | High speed optical subassembly with ceramic carrier |
AU2002211875A1 (en) * | 2000-10-06 | 2002-04-15 | Bae Systems Information And Electronic Sytems Integration Inc. | Optical fiber utilization for vcsel driven communications |
JP2002141597A (en) * | 2000-10-30 | 2002-05-17 | Opnext Japan Inc | Optical communication module and optical communication unit |
AU2002245067A1 (en) | 2000-11-01 | 2002-07-24 | Intel Corporation | System and method for collimating and redirecting beams |
JP2002162536A (en) | 2000-11-22 | 2002-06-07 | Ykk Corp | Ferrule for optical connector, and its manufacturing method |
US6666590B2 (en) | 2000-12-14 | 2003-12-23 | Northrop Grumman Corporation | High brightness laser diode coupling to multimode optical fibers |
US6793403B2 (en) | 2000-12-15 | 2004-09-21 | The Furukawa Electric Co., Ltd. | Method of producing ferrule and ferrule |
US20020090749A1 (en) | 2001-01-09 | 2002-07-11 | 3M Innovative Properties Company | Hermetic package for mems devices with integrated carrier |
US6440767B1 (en) | 2001-01-23 | 2002-08-27 | Hrl Laboratories, Llc | Monolithic single pole double throw RF MEMS switch |
US6479844B2 (en) | 2001-03-02 | 2002-11-12 | University Of Connecticut | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
US7242099B2 (en) | 2001-03-05 | 2007-07-10 | Megica Corporation | Chip package with multiple chips connected by bumps |
JP4118029B2 (en) | 2001-03-09 | 2008-07-16 | 富士通株式会社 | Semiconductor integrated circuit device and manufacturing method thereof |
US6768403B2 (en) | 2002-03-12 | 2004-07-27 | Hrl Laboratories, Llc | Torsion spring for electro-mechanical switches and a cantilever-type RF micro-electromechanical switch incorporating the torsion spring |
US6731853B2 (en) * | 2001-03-16 | 2004-05-04 | Corning Incorporarted | Multiple fiber chip clamp |
US6532101B2 (en) * | 2001-03-16 | 2003-03-11 | Xtera Communications, Inc. | System and method for wide band Raman amplification |
US20020168139A1 (en) | 2001-03-30 | 2002-11-14 | Clarkson William Andrew | Optical fiber terminations, optical couplers and optical coupling methods |
US6816529B2 (en) * | 2001-03-30 | 2004-11-09 | Santur Corporation | High speed modulation of arrayed lasers |
US6531767B2 (en) * | 2001-04-09 | 2003-03-11 | Analog Devices Inc. | Critically aligned optical MEMS dies for large packaged substrate arrays and method of manufacture |
US6633719B2 (en) | 2001-06-21 | 2003-10-14 | Lucent Technologies Inc. | Fiber array coupler |
US7012943B2 (en) * | 2001-06-28 | 2006-03-14 | Northrop Grumman Corporation | Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices |
US6775308B2 (en) * | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
US6451626B1 (en) | 2001-07-27 | 2002-09-17 | Charles W.C. Lin | Three-dimensional stacked semiconductor package |
US20030043582A1 (en) * | 2001-08-29 | 2003-03-06 | Ball Semiconductor, Inc. | Delivery mechanism for a laser diode array |
US6635960B2 (en) | 2001-08-30 | 2003-10-21 | Micron Technology, Inc. | Angled edge connections for multichip structures |
US6686654B2 (en) * | 2001-08-31 | 2004-02-03 | Micron Technology, Inc. | Multiple chip stack structure and cooling system |
DE20115945U1 (en) | 2001-09-27 | 2001-12-13 | Heimbach Gmbh Thomas Josef | Press pad |
US7283694B2 (en) * | 2001-10-09 | 2007-10-16 | Infinera Corporation | Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs |
US6888170B2 (en) | 2002-03-15 | 2005-05-03 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
US6660548B2 (en) * | 2002-03-27 | 2003-12-09 | Intel Corporation | Packaging of multiple active optical devices |
EP1351288B1 (en) | 2002-04-05 | 2015-10-28 | STMicroelectronics Srl | Process for manufacturing an insulated interconnection through a body of semiconductor material and corresponding semiconductor device |
US20030235415A1 (en) * | 2002-06-21 | 2003-12-25 | Peters Frank H. | Optical communication devices and optical communication methods |
US6919642B2 (en) | 2002-07-05 | 2005-07-19 | Industrial Technology Research Institute | Method for bonding IC chips to substrates incorporating dummy bumps and non-conductive adhesive and structures formed |
US7106973B2 (en) * | 2002-08-13 | 2006-09-12 | Lightpointe Communications, Inc. | Apparatus and method for use in free-space optical communication comprising optically aligned components integrated on circuit boards |
JP2004101944A (en) * | 2002-09-10 | 2004-04-02 | Sumitomo Electric Ind Ltd | Optical switch, method for switching light emitting apparatus, method for switching light receiving apparatus, multiplexer, demultiplexer and optical communication system |
US20050046034A1 (en) | 2003-09-03 | 2005-03-03 | Micron Technology, Inc. | Apparatus and method for high density multi-chip structures |
US7276787B2 (en) | 2003-12-05 | 2007-10-02 | International Business Machines Corporation | Silicon chip carrier with conductive through-vias and method for fabricating same |
KR100538158B1 (en) | 2004-01-09 | 2005-12-22 | 삼성전자주식회사 | Method for attaching stack chip of wafer level |
JP4074862B2 (en) | 2004-03-24 | 2008-04-16 | ローム株式会社 | Semiconductor device manufacturing method, semiconductor device, and semiconductor chip |
US7129567B2 (en) * | 2004-08-31 | 2006-10-31 | Micron Technology, Inc. | Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements |
US9466595B2 (en) | 2004-10-04 | 2016-10-11 | Intel Corporation | Fabrication of stacked die and structures formed thereby |
US7371676B2 (en) | 2005-04-08 | 2008-05-13 | Micron Technology, Inc. | Method for fabricating semiconductor components with through wire interconnects |
US7170183B1 (en) * | 2005-05-13 | 2007-01-30 | Amkor Technology, Inc. | Wafer level stacked package |
US20060278331A1 (en) * | 2005-06-14 | 2006-12-14 | Roger Dugas | Membrane-based chip tooling |
US7687400B2 (en) | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7528494B2 (en) | 2005-11-03 | 2009-05-05 | International Business Machines Corporation | Accessible chip stack and process of manufacturing thereof |
-
2001
- 2001-06-29 US US09/896,797 patent/US7831151B2/en active Active
-
2002
- 2002-06-21 WO PCT/US2002/020112 patent/WO2003003619A2/en not_active Application Discontinuation
- 2002-06-21 CN CNA028130987A patent/CN1599992A/en active Pending
- 2002-06-21 EP EP02739971A patent/EP1391061A4/en not_active Withdrawn
- 2002-06-21 CA CA002447373A patent/CA2447373A1/en not_active Abandoned
- 2002-06-21 KR KR1020037016817A patent/KR100912124B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20030011851A1 (en) | 2003-01-16 |
WO2003003619A3 (en) | 2003-04-10 |
EP1391061A4 (en) | 2004-08-18 |
WO2003003619A2 (en) | 2003-01-09 |
US7831151B2 (en) | 2010-11-09 |
EP1391061A2 (en) | 2004-02-25 |
KR20040015749A (en) | 2004-02-19 |
KR100912124B1 (en) | 2009-08-13 |
CN1599992A (en) | 2005-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7831151B2 (en) | Redundant optical device array | |
EP1412966A1 (en) | Multi-wavelength semiconductor laser arrays and applications thereof | |
US6549692B1 (en) | Optical monitoring of the angular position of micro mirrors in an optical switch | |
US20190342009A1 (en) | Spare channels on photonic integrated circuits and in photonic integrated circuit modules and systems | |
US20190339468A1 (en) | Spare channels on photonic integrated circuits and in photonic integrated circuit modules and systems | |
US6788895B2 (en) | Security mapping and auto reconfiguration | |
US6529652B1 (en) | Optical switch and method for aligning optical switch components | |
KR100936525B1 (en) | Opto-electronic device integration | |
US20190342010A1 (en) | Spare channels on photonic integrated circuits and in photonic integrated circuit modules and systems | |
US6836321B2 (en) | Testing bottom-emitting VCSELs | |
JP4846713B2 (en) | Optical cross-connect switch with axial alignment beam | |
US6983110B2 (en) | Component characteristic tolerant and component alignment tolerant optical receiver | |
US6763157B1 (en) | Self aligning optical interconnect with multiple opto-electronic devices per fiber channel | |
US6470110B1 (en) | Monolithic integration of control elements and micro-mirror in an optical switch | |
US6821026B2 (en) | Redundant configurable VCSEL laser array optical light source | |
US6718084B1 (en) | Integrated optical line card protection module | |
WO2003003071A2 (en) | Long-throw, tight focusing optical coupler | |
KR20080104079A (en) | Topside active optical device apparatus and method | |
JPH06232820A (en) | Photoelectric device and photoelectric connector for interconnection of electronic module | |
WO2003026082A2 (en) | Laser arrays for high power fiber amplifier pumps | |
US20040051028A1 (en) | Optical chip coupling system utilizing micromachine adjustable optical elements and a feedback circuit providing the micromachine with a feedback signal correlated to an optical signal parameter | |
US20230280529A1 (en) | Photonic integrated circuit, opto-electronic system and method | |
US7087446B2 (en) | Method of mounting optoelectronic devices on an optical element and article | |
JPH1039174A (en) | Semiconductor laser module device | |
JPWO2005068951A1 (en) | Photodetector, manufacturing method thereof, and optical module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
FZDE | Discontinued |