CA2457224A1 - Photonically engineered incandescent emitter - Google Patents
Photonically engineered incandescent emitter Download PDFInfo
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- CA2457224A1 CA2457224A1 CA002457224A CA2457224A CA2457224A1 CA 2457224 A1 CA2457224 A1 CA 2457224A1 CA 002457224 A CA002457224 A CA 002457224A CA 2457224 A CA2457224 A CA 2457224A CA 2457224 A1 CA2457224 A1 CA 2457224A1
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- 239000004038 photonic crystal Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 29
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 53
- 239000010937 tungsten Substances 0.000 claims description 53
- 229910052721 tungsten Inorganic materials 0.000 claims description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- -1 oxynitrides Chemical class 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000001764 infiltration Methods 0.000 claims description 2
- 230000008595 infiltration Effects 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 abstract description 19
- 230000005855 radiation Effects 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241000321453 Paranthias colonus Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/50—Selection of substances for gas fillings; Specified pressure thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
- H01K1/04—Incandescent bodies characterised by the material thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
- H01K3/02—Manufacture of incandescent bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure (380) can be chosen to modify or suppress thermal radiation above a cut off wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three dimensional photonic crystal of a structural material, suitable for the incandescent emitter is also disclosed.
Description
Photonically Engineered Incandescent Emitter STATEMENT OF GOVERNMENT INTEREST
This invention was made with Government support under contract no.
s DE-AC04-94AL85000 awarded by the U. S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.
BACKGROUND OF THE INVENTION
The present invention relates to incandescent lamps, and more particularly to incandescent lamps made from photonically engineered thermal emitters.
to Incandescent lamps offer very high quality lighting, are inexpensive, and are the most popular lighting technology for residential use. They are also, unfortunately, the least efficient (energy to useful light) lighting technology used commercially today. An excellent overview of incandescent lamp technology is given in Bergman et al., Filament Lamps, GE Research and Development ~s Center, Report 98CRD027, Feb. 1998.
The lighting industry commonly uses the term luminous efficacy to describe the efficiency of a lamp. Luminous efficacy is frequently defined as the luminous flux divided by the total radiant power in units of Iumens/Watt. The luminous flux has units of lumens, and is the radiant flux weighted by the human 2o eye response. A better description for the efficiency of a lamp is to divide the luminous flux by the total input power to the lighting source, so that the electrical performance can be factored into the comparison of lighting technologies. This disclosure will use the latter definition for luminous efficacy, since some lighting approaches have inherently less efficiency in converting input electrical power 2s into radiant power.
The luminous efficacy of a 60W incandescent lamp using a tungsten filament is only about 15 Iumens/Watt. The luminous efficacy of the incandescent lamp is low because much of the light (around 90%) is emitted by the tungsten filament in the non-visible infrared (wavelengths longer than 760 nm) portion of 3o the spectrum. Fluorescent lamps are much more efficient than incandescent lamps, and have luminous efficacies between 75 and 100 IumenslWatt. By comparison, the theoretical maximum luminous efficacy for high-quality white lighting using a broad spectral source is around 200 lumens/Watt.
An incandescent lamp works by heating up a tungsten filament to a sufficiently high temperature (typically around 2800°K) that it radiates in the s visible portion of the electromagnetic spectrum (roughly 380 to 760 nm).
Such high-temperature bodies are commonly referred to as "emitters" or "radiators".
The radiation from a high-temperature emitter is described by the theory of blackbodies. An ideal blackbody emits the theoretically maximum radiation.
Real emitters do not radiate as well as an ideal blackbody. The emissivity is the ratio of to the radiation from a real emitter to the radiation of an ideal blackbody, and is unitless with a value between 0 and 1.
The luminous efficacy of the incandescent lamp can be improved by modifying the emissivity of the emitter. The optimum emitter for lighting purposes would have an emissivity of unity in the visible portion of the spectrum and an is emissivity of zero in the non-visible portions of the spectrum. Such an emitter would emit all the light in the useful visible portion of the spectrum and no light in the non-useful non-visible portion of the spectrum. A 2800°K emitter with such an optimized selective emission would have a luminous efficacy approaching 200 Iumens/Watt, or over 10X improvement compared to current incandescent lamps 2o and 2X improvement compared to current fluorescent lamps.
There remains a need for a high-temperature emitter that selectively emits radiation in the visible portion of the spectrum, thereby enabling an incandescent lamp having improved luminous efficacy.
SUMMARY OF THE INVENTION
2s The present invention provides a photonically engineered incandescent emitter, comprising a photonic crystal having a characteristic lattice constant and comprising an emitter material having a first dielectric constant and at least one other lattice material having at least one other dielectric constant and wherein the characteristic lattice constant, the emitter material, and the at least one other 30 lattice material are chosen so as to create a photonic bandgap that suppresses or modifies thermal emission above a desired cutoff wavelength. The emitter material can comprise a refractory non-metal or a refractory metal, such as tungsten. The photonically engineered incandescent emitter can thereby be tailored to selectively emit thermal radiation in the visible and near-infrared portions of the spectrum, enabling a more efficient incandescent lamp.
The present invention further provides a method for fabricating the photonically engineered structure, suitable for the incandescent emitter, comprising forming a lattice structure mold of a sacrificial material on a substrate;
depositing a structural material into the lattice structure mold; and removing the sacrificial material from the lattice structure mold. Silicon integrated circuit technology is particularly well suited to forming the lattice structure mold to enable the formation of photonic crystals of refractory materials with lattice to constants on the order of the wavelength of visible light.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and form part of the specification, illustrate the present invention and, together with the description, describe the invention. In the drawings, like elements are referred to ~s by like numbers.
Figure 1 shows the estimated luminous efficacy of an optimized incandescent source where the emissivity is unity above and zero below a cutoff wavelength.
Figure 2 shows a schematic illustration of a three-dimensional (3D) 20 "Lincoln-Log" type photonic crystal structure.
Figure 3 illustrates a fabrication sequence for a four-layer Lincoln-Log type tungsten photonic crystal.
Figure 4 shows a cross-sectional scanning electron micrograph of a four-layer tungsten photonic crystal built on a (001 ) oriented silicon substrate.
Fig. 4a zs shows the tungsten photonic crystal prior to removal of a silica sacrificial mold.
Fig. 4b shows the tungsten photonic crystal after removal of the silica sacrificial mold. The one-dimensional tungsten rod used to form the crystal has a rod width of 1.2 ~.m and the rod-to-rod spacing of 4.2 p.m.
Figure 5 shows the measured reflectance and transmittance spectra for 3o the light propagating along the <001 > axis of the four-layer tungsten photonic crystal.
Figure 6 shows the tilt-angle reflectance spectra from the four-layer tungsten photonic crystal.
Figure 7 shows the computed transmission spectra for tungsten photonic crystals with N = 2, 4 and 6 layers.
Figure ~ shows the spectral emissivity of the four-layer tungsten photonic crystal having a lattice constant of 4.2 p.m.
DETAILED DESCRIPTION OF THE INVENTION
The present invention comprises a photonically engineered incandescent emitter that is more efficient than conventional incandescent lamps and a method for making the same. The more efficient incandescent emitter of the present invention is enabled by improving the emission selectivity of a high-temperature to emitter using photonically engineered structures. Photonically engineered structures consist of materials with a periodic variation on the order of the wavelength of light. The periodic variation changes the allowed optical modes in the medium, leading to many varied and useful properties. Some photonic structures completely eliminate optical modes in all directions for a specific band is of wavelengths. These structures are said to exhibit a three-dimensional (3D) photonic bandgap. A description of photonic crystals and their properties is given by Joannopoulos et al., Photonic Crystals: Molding the Flow of Light (1995).
The thermal emission spectrum and, therefore, the emissivity can be altered by suitable modification of the properties of photonic structures. The use ao of photonic structures for the control of emission of thermal radiation from an object is disclosed in copending U.S. Patent Application 09/441,221 to Lin and Fleming, which is incorporated herein by reference. Modification of the thermal radiation from a photonic structure in the infrared portion of the spectrum has been described by Lin et al. in "Enhancement and suppression of thermal 2s emission by a three-dimensional photonic crystal," Phys. Rev B62, 82243 (2000).
Lin et al. fabricated a 3D "Lincoln-Log" type silicon photonic crystal with air as the second dielectric. The silicon photonic crystal had a lattice constant of 4.2 ~.m and a large photonic bandgap covering the infrared wavelength range from ~, =
15 ~.m. When heated to 410°C, the silicon photonic crystal exhibited significantly 3o reduced emissivity between 10 and 16 ~.m, indicative of the 3D photonic band gap.
Figure 1 shows the luminous efficacy for an optimized incandescent source having an emissivity of unity above and zero below a cutoff wavelength.
The luminous efficacy is maximized by moving the cutoff wavelength as close as possible to the long-wavelength edge of visible light (i.e., 760 nm). Luminous s efficacies approach 200 Iumens/Watt with such an optimized emitter. Thus, for incandescent lighting applications in the visible portion of the spectrum, the photonic bandgap of the photonic crystal must be closer to the long-wavelength edge of visible light than was obtained with the silicon photonic crystal of Lin et al.
To move the photonic bandgap closer to the long-wavelength edge of ~o visible light, the photonic crystal can have smaller dimensions and use materials that have greater dielectric contrast and can tolerate high temperatures (e.g., 2800°K). As described by Bergman et al., the most common material used for incandescent lamp filaments are tungsten-based materials. As a metal, tungsten also offers the advantage of a large refractive index when used in a photonic Is crystal. A large difference in the refractive index enhances the effect of the periodic variation of the refractive index on the optical modes in the photonic crystal, thereby producing a photonic crystal with a large photonic bandgap wherein the emissivity is reduced.
Photonically Engineered Emitter Structures 2o The present invention discloses a 2D or 3D photonic crystal that selectively emits at visible and near-infrared wavelengths. Various types of photonic crystal structures that exhibit a 2D or 3D photonic bandgap known to those in the art are suitable for the present invention. Some examples of photonic crystal structures and the fabrication thereof are disclosed in U.S. Patent 2s Application 09/296,702 to Fleming and Lin, which is incorporated herein by reference.
A common type of photonic crystal exhibiting a 3D photonic bandgap that will be used as an illustrative example in the present disclosure is the Lincoln-Log type of photonic crystal structure 200 shown schematically in Figure 2. The 3D
3o Lincoln-Log type structure comprises alternating layers 210, each layer 210 further comprising an evenly spaced row of parallel "logs" or rods 220 of material with a first dielectric constant. The spaces between the rods 220 are filled by a material 230 having a second dielectric constant. For simplicity as well as for high dielectric contrast, material 230 is often air. For a four-layer photonic crystal 200, the one-dimensional rods 220 have a stacking sequence that repeats itself every four layers with a repeat distance of c. Within each layer 210, the axes of the rods 220 are parallel to each other with a pitch of d. Alternate layers 210 are rotated by 90 degrees relative to the previous layer. Between each layer 210, the rods 220 are shifted relative to each other by 0.5d. The resulting structure has a face-centered-tetragonal lattice symmetry of which the diamond structure is a subset.
For the special case of c/d = 1.414, the crystal 200 can be derived from a face-centered-cubic unit cell with a basis of two rods.
lo Fabrication of the Photonic Crystal Photonic crystal structures exhibiting 2D or 3D photonic bandgaps suitable for the present invention can be fabricated by various methods known to those skilled in the art. The vertical topology of the 3D photonic crystal structure can be built by repetitive deposition and etching of multiple dielectric films in a layer-by-~s layer method. One layer-by-layer method for fabricating the photonic crystal is to build up the structure directly with the structural material, as was done for the silicon photonic crystal of Lin et al., described above. Alternatively, the fabrication process can comprise forming a lattice structure mold for the structural material in a sacrificial material, selective deposition of the structural material into the lattice 2o structure mold, and finally removing the sacrificial material from the backfilled mold to leave a photonic crystal of the structural material. The latter method may have advantages for structural materials that can otherwise build up large residual stresses during a direct layer-by-layer fabrication process. This fabrication process can be used to form photonic crystals of a wide variety of 2s structural materials that can be deposited by a conformal process, including metals, metal alloys, and semiconductors.
For illustrative purposes, described below and illustrated in Figures 3a - 3i is a layer-by-layer fabrication sequence for a 3D Lincoln Log tungsten photonic crystal suitable for the incandescent emitter of the present invention. The 3o tungsten photonic crystal described herein has a pitch between adjacent rods of d = 4.2 ~,m, a rod width of w = 1.2 ~.m, and a layer thickness of 1.6 ~.m.
Photonic crystals of other refractory metals and non-metals, such as tungsten alloys, silicon carbide, carbon, and titanic, are also suitable for the photonically engineered incandescent emitter of present invention.
The lattice structure mold can be formed by sequential deposition of a cavity-forming structural material, such as polysilicon, in alternating patterned layers of a sacrificial mold material, such as silica (Si02). The basic layer-by-layer polysilicon in silica fabrication sequence is described by Lin et al. in Nature 394, 251 (1998) and in the copending U.S. Patent Application 09/296,702 to Fleming and Lin. The layer-by-layer fabrication method disclosed by Fleming and Lin enables layered material composition with precise thickness, planarity, and ~o alignment control.
In Fig. 3a, a first layer 310 comprised of the sacrificial mold material, e.g., silica, is deposited onto a silicon substrate 300. The thickness of silica layer 310 is greater than the desired thickness of the first structured layer 340 of the photonic lattice, whose thickness is typically in the range 0.02-10 ~.m, depending Is on the cutoff wavelength of interest. For the 3D tungsten photonic crystal described herein, the thickness of the structured layer 340 can be 1.6 Vim, and the initial thickness of silica layer 310 can be approximately 2.0 ~,m.
Fig. 3b shows the first silica layer 310 patterned to form a plurality of evenly spaced and parallel spacer bars 311 with approximately rectangular 2o cross-section. Such patterning can be accomplished using a photolithographic etch mask (not shown) over silica layer 310 with a plurality of openings in the etch mask at the locations where the material in layer 310 between the spacer bars 311 is to be removed. An anisotropic etching process can then be used (e.g., reactive ion etching directed normal to the surface), resulting in bars 2s having approximately rectangular cross-section. The etching step is preferably performed to etch completely down through layer 310 to the substrate 300. The etch mask can then be stripped, resulting in the structure of Fig. 3b. In the present example, the pitch between adjacent spacer bars 311 can be 4.2 ~.m and the width of the spacer bars can be 3.0 ~.m.
3o In Fig. 3c, polysilicon 320 can be deposited by chemical vapor deposition to fill in the regions between the silica spacer bars 311. Again, the polysilicon thickness can be greater than the desired final thickness of the first structured layer 340. Depositing the polysilicon 320 generally leads to a complex and non-planar surface 321. Such a rough and uneven surface could result in a poor quality photonic crystal, due to scattering and uncontrolled reflections at the growth surface. Therefore, chemical-mechanical-polishing (CMP) of the growth surface is performed to planarize the growth surface prior to deposition of s subsequent structural layers. CMP of the general type used in the present invention is disclosed in U.S. Patent 5,998,298 to Fleming et al., which is incorporated herein by reference.
As shown in Fig. 3d, a first structured layer 340 comprising a planar pattern of silica spacer bars 311 and polysilicon rods 341 is thereby produced.
to The polysilicon rods 341 are elongate, roughly rectangular in cross section, and can be 1.2 ~,m wide and 1.6 wm thick.
As shown in Fig. 3e, repeating the same basic set of growth and processing steps, multiple structured layers 340 can be grown on top of the substrate 300 to form the desired photonic lattice structure 350 with polysilicon.
~s To form the Lincoln-Log structure, the orientation of the polysilicon rods 341 is rotated 90° between each structured layer 340, and between every other layer the rods 341 are shifted relative to each other by half of the pitch d. The structure 350 thereby has a face-centered-tetragonal lattice symmetry.
As shown in Fig. 3f, the polysilicon rods 341 can then be removed to form 2o the lattice structure mold 360. The polysilicon rods 341 can be removed using a 6M, 85°C KOH etch, which has a selectivity of 100:1 (Si to Si02). Over-etch during the KOH process, which is desirable to ensure the removal of all the polysilicon 341, can result in the formation of a "V" structure 361 on the bottom of the layer 340 contacting the silicon substrate 300. This is due to etching of the 2s underlying silicon substrate 300 and is dependent on the substrate crystallographic orientation. The KOH etch effectively stops when the etch-front encounters the slow etching (111 ) planes of the silicon substrate 300, thereby forming the "V" groove 361.
As shown in Fig 3g, the lattice structure mold 360 can be backfilled with a 3o structural material. A variety of deposition processes, such as chemical vapor deposition (CVD), electroplating, or infiltration with spin-on glasses or nanoparticles, can be used for the backfilling of the mold 360, so long as the sacrificial material (e.g., silica) can later be selectively removed from the s backfilled structural material. For example, III-V compound semiconductors, II-VI
materials, single and mixed oxides, nitrides, oxynitrides, metals, and metal alloys can be deposited by CVD. A precursor conducting coating can be applied to the lattice structure mold 360 and a wide variety of metals can be electroplated from s a solution to backfill the mold 360. Typical electroplated metals include copper, nickel, gold, iron, silver, cobalt, and chromium.
The lattice structure mold 360 can be backfilled with tungsten via CVD to form tungsten rods 370 embedded in the silica mold material 311. A precursor nm thick TiN adhesion layer (not shown) can be deposited on the mold 360 by ~o reactive ion sputtering, since the blanket CVD tungsten film does not adhere to silicon dioxide. Tungsten can be deposited at high pressure (e.g., 90 Torr) from WF6 and H2. The chemical vapor deposition of tungsten results in films of very high purity. The tungsten film can have a resistivity of 10 g,Ohm-cm.
Backfilling of the mold 360 with CVD tungsten 370 can result is a rough and uneven tungsten ~s growth surface 371 on the top surface of the mold 360.
As shown in Fig. 3h the top surface of the backfilled mold 360 can planarized by CMP to remove the excess tungsten. A scanning electron micrograph of a tungsten-backfilled, planarized mold 360 is shown in Fig. 4a.
As shown in Fig. 4a, a keyhole 382 can be formed in the center of the more deeply 2o embedded lines of the tungsten rods 370, since the step coverage of the CVD
tungsten deposition process is not 100%. However, the film thickness is far greater than the skin depth of tungsten for electromagnetic radiation in the visible and infrared.
Finally, as shown in Fig. 3i, the silica spacer bars 311 can be removed 2s from the tungsten-backfilled and planarized lattice structure mold 360 by selective etching with a 1:1 HF-based solution. The result is a 3D tungsten photonic crystal 380 comprising stacked tungsten rods 370 on the silicon substrate 300. Fig. 4b shows a scanning electron micrograph of the four-layer tungsten photonic crystal 380 comprising the stacked tungsten rods 370 on the silicon substrate 300. The 3o tungsten photonic crystal 380 has a stacking sequence that repeats itself every four layers, and has a face-center-tetragonal lattice symmetry. The tungsten rod 370 width is 1.2 ~.m, rod-to-rod spacing is 4.2 ~,m and the filling fraction of the high index tungsten is 28%. The tungsten photonic crystal 380 retains sufficient structural integrity to be handled readily.
This fabrication process can be extended to create almost any interconnected photonic crystal having selective emissivity at visible or infrared s wavelengths. For example, current state-of-the-art silicon integrated circuit processing tools are capable of shrinking the minimum feature sizes to those required for structures that have photonic bandgaps in the near infrared and have selective emissivity in the visible. See, e.g., "International Technology Roadmap for Semiconductors," 1999 Edition [retrieved on 2001-08-09]. Retrieved from the io Internet:<URL: http://public.itrs.net/files/1999_SIA Roadmap/Home.htm>.
Optical Properties of the Tungsten Photonic Crystal The optical properties of the 3D tungsten photonic crystal 380 fabricated according to the above process were characterized using a Fourier-transform infrared measurement system for wavelengths ranging from 1.5 to 25 p.m. To is obtain reflectance (R), a sample spectrum was taken from a 3D tungsten photonic crystal 380 first and then normalized to a reference spectrum of a uniform silver mirror. To find the absolute transmittance (T), a transmission spectrum taken from a tungsten photonic crystal 380 was normalized to that of a bare silicon wafer. This normalization procedure was to calibrate away extrinsic 2o effects, such as light reflection at the air-silicon interface and absorption of the silicon substrate 300.
Figure 5 shows the absolute reflectance spectrum 510 and transmittance spectrum 520 of a four-layer tungsten photonic crystal 380. The dashed line shows the transmittance of a 6000 uniform tungsten film for reference. Light 2s propagates along the <001 > direction of the tungsten photonic crystal 380 and is unpolarized. The reflectance 510 exhibits oscillations at ~.< 5.5 p,m, raises sharply at 7~~ 6 p.m (the band edge) and finally reaches a high reflectance of 90% for ~,> 8 ~.m. Correspondingly, the transmittance 520 shows distinct peaks at 7~< 5.5 pm, decreases sharply at ~,~ 6 pm (the band edge) and then vanishes to below 1 %
for 30 ~,> 8 p.m. The simultaneous high R and low T at wavelengths greater than 8 wm indicates the existence of a photonic band gap in the tungsten photonic crystal.
The attenuation is ~30dB at ~,=10 pm for the four-layer tungsten photonic crystal to 380, or equivalently a 7.5dB attenuation per layer. The multiple oscillations at ~,<
5.5 ~.m are attributed to photonic density-of-states oscillations in the photonic allowed band.
As shown in Fig. 6, tilt-angle reflection spectra were taken to determine the s angular dependence of the photonic band gap. For tilt-angle transmission measurements, the tungsten photonic crystal 380 was mounted on a rotational stage and the rotational angles spanned from light incident angles from 0° to 60°, measured from the surface normal (i.e., the <001 > direction). The crystal orientation is tilted from the <001> to <110> axes. The light incident angle is to therefore systematically tilted away from G-X' toward G-L of the first Brillouin zone. Four tilt-angle spectra are shown in Fig. 6, for light incident angles of 10, 30, 40, and 50°, respectively. As the light incident angle is increased, the band edge position moves from ~, ~ 6 ~,m for q = 10° to ~, ~ 8 ~.m for q =
50°. Both the oscillating features at 7~ < 6 ~.m and the high reflectance at longer wavelength is remain for all light incident angles. Therefore, a large complete 3D
photonic band gap exists, from 7~ ~ 8~.m to ~. > 20~,m, for the tungsten photonic crystal 380.
Figure 7 shows the theoretical transmission spectra for tungsten photonic crystals of different number-of-layers, N=2, 4 and 6, plotted in a log-to-log scale.
The dashed line is a reference spectrum for a uniform 6000A tungsten film. The zo theoretical transmission spectra were calculated according to the method of Sigalas et al. in Phys. Rev. B52, 11744 (1995). The transmittance is very low in the bandgap (T< 10-$ for N = 6 layers), which is consistent with the small metallic skin-depth (300-500 A for 1 ~.m < 7~ < 25 ~.m), and is nearly independent of wavelength. The crystal spectrum, on the other hand, exhibits a much higher as transmission (T~10-~) in the allowed band, suggesting that photonic transport in the metallic allowed band is not dominated by metallic attenuation. Moreover, a strong dependence on the number-of-layers of transmittance is observed in the band gap (7~ > 8 ~.m). This number-of-layers-dependence indicates that transmittance attenuation at ~, > 8 ~m scales with layer-thickness of the fabricated 3o structure, but not the metallic skin depth. Hence, the observed low transmittance is due primarily to the photonic band gap effect. The attenuation constant in the band gap is extraordinarily large - about 8, 14 and 16 dB per layer at ~, =
10, 20 and 40 ~.m, respectively. This suggests that as few as four to six crystal layers are sufficient for achieving strong electromagnetic wave attenuation.
Such an extraordinarily large band gap is ideally suited for suppressing broadband Blackbody radiation in the infrared and re-cycling radiant energy into visible spectrum. Figure 8 shows the spectral emissivity of the tungsten photonic crystal 380. The crystal 380 has a photonic bandgap (region with nearly zero emissivity) over a large range in the far infrared (8 ~.m < ~, < 25 ~,m) portion of the spectrum. The very large photonic bandgap and large reduction in emissivity in the far infrared is due to the use of metal for the photonic crystal. In the photon to recycling process, the photonic band gap completely frustrates infrared thermal emission and selectively forces the radiation into near-infrared and visible emission. Consequently, energy is not wasted in heat generation, but rather re-channeled into a useful emission band. The lattice constant and refractory material of the photonic crystal can be determined by the fabrication process.
is Therefore, the emission band can be tailored to be in the visible when the photonic crystal is heated up to an elevated temperature of >1500°C, giving rise to a highly efficient incandescent lamp.
It will be understood that the above description is merely illustrative of the applications of the principles of the present invention, the scope of which is to be 2o determined by the claims viewed in light of the specification. Other variants and modifications of the invention will be apparent to those of skill in the art.
This invention was made with Government support under contract no.
s DE-AC04-94AL85000 awarded by the U. S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.
BACKGROUND OF THE INVENTION
The present invention relates to incandescent lamps, and more particularly to incandescent lamps made from photonically engineered thermal emitters.
to Incandescent lamps offer very high quality lighting, are inexpensive, and are the most popular lighting technology for residential use. They are also, unfortunately, the least efficient (energy to useful light) lighting technology used commercially today. An excellent overview of incandescent lamp technology is given in Bergman et al., Filament Lamps, GE Research and Development ~s Center, Report 98CRD027, Feb. 1998.
The lighting industry commonly uses the term luminous efficacy to describe the efficiency of a lamp. Luminous efficacy is frequently defined as the luminous flux divided by the total radiant power in units of Iumens/Watt. The luminous flux has units of lumens, and is the radiant flux weighted by the human 2o eye response. A better description for the efficiency of a lamp is to divide the luminous flux by the total input power to the lighting source, so that the electrical performance can be factored into the comparison of lighting technologies. This disclosure will use the latter definition for luminous efficacy, since some lighting approaches have inherently less efficiency in converting input electrical power 2s into radiant power.
The luminous efficacy of a 60W incandescent lamp using a tungsten filament is only about 15 Iumens/Watt. The luminous efficacy of the incandescent lamp is low because much of the light (around 90%) is emitted by the tungsten filament in the non-visible infrared (wavelengths longer than 760 nm) portion of 3o the spectrum. Fluorescent lamps are much more efficient than incandescent lamps, and have luminous efficacies between 75 and 100 IumenslWatt. By comparison, the theoretical maximum luminous efficacy for high-quality white lighting using a broad spectral source is around 200 lumens/Watt.
An incandescent lamp works by heating up a tungsten filament to a sufficiently high temperature (typically around 2800°K) that it radiates in the s visible portion of the electromagnetic spectrum (roughly 380 to 760 nm).
Such high-temperature bodies are commonly referred to as "emitters" or "radiators".
The radiation from a high-temperature emitter is described by the theory of blackbodies. An ideal blackbody emits the theoretically maximum radiation.
Real emitters do not radiate as well as an ideal blackbody. The emissivity is the ratio of to the radiation from a real emitter to the radiation of an ideal blackbody, and is unitless with a value between 0 and 1.
The luminous efficacy of the incandescent lamp can be improved by modifying the emissivity of the emitter. The optimum emitter for lighting purposes would have an emissivity of unity in the visible portion of the spectrum and an is emissivity of zero in the non-visible portions of the spectrum. Such an emitter would emit all the light in the useful visible portion of the spectrum and no light in the non-useful non-visible portion of the spectrum. A 2800°K emitter with such an optimized selective emission would have a luminous efficacy approaching 200 Iumens/Watt, or over 10X improvement compared to current incandescent lamps 2o and 2X improvement compared to current fluorescent lamps.
There remains a need for a high-temperature emitter that selectively emits radiation in the visible portion of the spectrum, thereby enabling an incandescent lamp having improved luminous efficacy.
SUMMARY OF THE INVENTION
2s The present invention provides a photonically engineered incandescent emitter, comprising a photonic crystal having a characteristic lattice constant and comprising an emitter material having a first dielectric constant and at least one other lattice material having at least one other dielectric constant and wherein the characteristic lattice constant, the emitter material, and the at least one other 30 lattice material are chosen so as to create a photonic bandgap that suppresses or modifies thermal emission above a desired cutoff wavelength. The emitter material can comprise a refractory non-metal or a refractory metal, such as tungsten. The photonically engineered incandescent emitter can thereby be tailored to selectively emit thermal radiation in the visible and near-infrared portions of the spectrum, enabling a more efficient incandescent lamp.
The present invention further provides a method for fabricating the photonically engineered structure, suitable for the incandescent emitter, comprising forming a lattice structure mold of a sacrificial material on a substrate;
depositing a structural material into the lattice structure mold; and removing the sacrificial material from the lattice structure mold. Silicon integrated circuit technology is particularly well suited to forming the lattice structure mold to enable the formation of photonic crystals of refractory materials with lattice to constants on the order of the wavelength of visible light.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and form part of the specification, illustrate the present invention and, together with the description, describe the invention. In the drawings, like elements are referred to ~s by like numbers.
Figure 1 shows the estimated luminous efficacy of an optimized incandescent source where the emissivity is unity above and zero below a cutoff wavelength.
Figure 2 shows a schematic illustration of a three-dimensional (3D) 20 "Lincoln-Log" type photonic crystal structure.
Figure 3 illustrates a fabrication sequence for a four-layer Lincoln-Log type tungsten photonic crystal.
Figure 4 shows a cross-sectional scanning electron micrograph of a four-layer tungsten photonic crystal built on a (001 ) oriented silicon substrate.
Fig. 4a zs shows the tungsten photonic crystal prior to removal of a silica sacrificial mold.
Fig. 4b shows the tungsten photonic crystal after removal of the silica sacrificial mold. The one-dimensional tungsten rod used to form the crystal has a rod width of 1.2 ~.m and the rod-to-rod spacing of 4.2 p.m.
Figure 5 shows the measured reflectance and transmittance spectra for 3o the light propagating along the <001 > axis of the four-layer tungsten photonic crystal.
Figure 6 shows the tilt-angle reflectance spectra from the four-layer tungsten photonic crystal.
Figure 7 shows the computed transmission spectra for tungsten photonic crystals with N = 2, 4 and 6 layers.
Figure ~ shows the spectral emissivity of the four-layer tungsten photonic crystal having a lattice constant of 4.2 p.m.
DETAILED DESCRIPTION OF THE INVENTION
The present invention comprises a photonically engineered incandescent emitter that is more efficient than conventional incandescent lamps and a method for making the same. The more efficient incandescent emitter of the present invention is enabled by improving the emission selectivity of a high-temperature to emitter using photonically engineered structures. Photonically engineered structures consist of materials with a periodic variation on the order of the wavelength of light. The periodic variation changes the allowed optical modes in the medium, leading to many varied and useful properties. Some photonic structures completely eliminate optical modes in all directions for a specific band is of wavelengths. These structures are said to exhibit a three-dimensional (3D) photonic bandgap. A description of photonic crystals and their properties is given by Joannopoulos et al., Photonic Crystals: Molding the Flow of Light (1995).
The thermal emission spectrum and, therefore, the emissivity can be altered by suitable modification of the properties of photonic structures. The use ao of photonic structures for the control of emission of thermal radiation from an object is disclosed in copending U.S. Patent Application 09/441,221 to Lin and Fleming, which is incorporated herein by reference. Modification of the thermal radiation from a photonic structure in the infrared portion of the spectrum has been described by Lin et al. in "Enhancement and suppression of thermal 2s emission by a three-dimensional photonic crystal," Phys. Rev B62, 82243 (2000).
Lin et al. fabricated a 3D "Lincoln-Log" type silicon photonic crystal with air as the second dielectric. The silicon photonic crystal had a lattice constant of 4.2 ~.m and a large photonic bandgap covering the infrared wavelength range from ~, =
15 ~.m. When heated to 410°C, the silicon photonic crystal exhibited significantly 3o reduced emissivity between 10 and 16 ~.m, indicative of the 3D photonic band gap.
Figure 1 shows the luminous efficacy for an optimized incandescent source having an emissivity of unity above and zero below a cutoff wavelength.
The luminous efficacy is maximized by moving the cutoff wavelength as close as possible to the long-wavelength edge of visible light (i.e., 760 nm). Luminous s efficacies approach 200 Iumens/Watt with such an optimized emitter. Thus, for incandescent lighting applications in the visible portion of the spectrum, the photonic bandgap of the photonic crystal must be closer to the long-wavelength edge of visible light than was obtained with the silicon photonic crystal of Lin et al.
To move the photonic bandgap closer to the long-wavelength edge of ~o visible light, the photonic crystal can have smaller dimensions and use materials that have greater dielectric contrast and can tolerate high temperatures (e.g., 2800°K). As described by Bergman et al., the most common material used for incandescent lamp filaments are tungsten-based materials. As a metal, tungsten also offers the advantage of a large refractive index when used in a photonic Is crystal. A large difference in the refractive index enhances the effect of the periodic variation of the refractive index on the optical modes in the photonic crystal, thereby producing a photonic crystal with a large photonic bandgap wherein the emissivity is reduced.
Photonically Engineered Emitter Structures 2o The present invention discloses a 2D or 3D photonic crystal that selectively emits at visible and near-infrared wavelengths. Various types of photonic crystal structures that exhibit a 2D or 3D photonic bandgap known to those in the art are suitable for the present invention. Some examples of photonic crystal structures and the fabrication thereof are disclosed in U.S. Patent 2s Application 09/296,702 to Fleming and Lin, which is incorporated herein by reference.
A common type of photonic crystal exhibiting a 3D photonic bandgap that will be used as an illustrative example in the present disclosure is the Lincoln-Log type of photonic crystal structure 200 shown schematically in Figure 2. The 3D
3o Lincoln-Log type structure comprises alternating layers 210, each layer 210 further comprising an evenly spaced row of parallel "logs" or rods 220 of material with a first dielectric constant. The spaces between the rods 220 are filled by a material 230 having a second dielectric constant. For simplicity as well as for high dielectric contrast, material 230 is often air. For a four-layer photonic crystal 200, the one-dimensional rods 220 have a stacking sequence that repeats itself every four layers with a repeat distance of c. Within each layer 210, the axes of the rods 220 are parallel to each other with a pitch of d. Alternate layers 210 are rotated by 90 degrees relative to the previous layer. Between each layer 210, the rods 220 are shifted relative to each other by 0.5d. The resulting structure has a face-centered-tetragonal lattice symmetry of which the diamond structure is a subset.
For the special case of c/d = 1.414, the crystal 200 can be derived from a face-centered-cubic unit cell with a basis of two rods.
lo Fabrication of the Photonic Crystal Photonic crystal structures exhibiting 2D or 3D photonic bandgaps suitable for the present invention can be fabricated by various methods known to those skilled in the art. The vertical topology of the 3D photonic crystal structure can be built by repetitive deposition and etching of multiple dielectric films in a layer-by-~s layer method. One layer-by-layer method for fabricating the photonic crystal is to build up the structure directly with the structural material, as was done for the silicon photonic crystal of Lin et al., described above. Alternatively, the fabrication process can comprise forming a lattice structure mold for the structural material in a sacrificial material, selective deposition of the structural material into the lattice 2o structure mold, and finally removing the sacrificial material from the backfilled mold to leave a photonic crystal of the structural material. The latter method may have advantages for structural materials that can otherwise build up large residual stresses during a direct layer-by-layer fabrication process. This fabrication process can be used to form photonic crystals of a wide variety of 2s structural materials that can be deposited by a conformal process, including metals, metal alloys, and semiconductors.
For illustrative purposes, described below and illustrated in Figures 3a - 3i is a layer-by-layer fabrication sequence for a 3D Lincoln Log tungsten photonic crystal suitable for the incandescent emitter of the present invention. The 3o tungsten photonic crystal described herein has a pitch between adjacent rods of d = 4.2 ~,m, a rod width of w = 1.2 ~.m, and a layer thickness of 1.6 ~.m.
Photonic crystals of other refractory metals and non-metals, such as tungsten alloys, silicon carbide, carbon, and titanic, are also suitable for the photonically engineered incandescent emitter of present invention.
The lattice structure mold can be formed by sequential deposition of a cavity-forming structural material, such as polysilicon, in alternating patterned layers of a sacrificial mold material, such as silica (Si02). The basic layer-by-layer polysilicon in silica fabrication sequence is described by Lin et al. in Nature 394, 251 (1998) and in the copending U.S. Patent Application 09/296,702 to Fleming and Lin. The layer-by-layer fabrication method disclosed by Fleming and Lin enables layered material composition with precise thickness, planarity, and ~o alignment control.
In Fig. 3a, a first layer 310 comprised of the sacrificial mold material, e.g., silica, is deposited onto a silicon substrate 300. The thickness of silica layer 310 is greater than the desired thickness of the first structured layer 340 of the photonic lattice, whose thickness is typically in the range 0.02-10 ~.m, depending Is on the cutoff wavelength of interest. For the 3D tungsten photonic crystal described herein, the thickness of the structured layer 340 can be 1.6 Vim, and the initial thickness of silica layer 310 can be approximately 2.0 ~,m.
Fig. 3b shows the first silica layer 310 patterned to form a plurality of evenly spaced and parallel spacer bars 311 with approximately rectangular 2o cross-section. Such patterning can be accomplished using a photolithographic etch mask (not shown) over silica layer 310 with a plurality of openings in the etch mask at the locations where the material in layer 310 between the spacer bars 311 is to be removed. An anisotropic etching process can then be used (e.g., reactive ion etching directed normal to the surface), resulting in bars 2s having approximately rectangular cross-section. The etching step is preferably performed to etch completely down through layer 310 to the substrate 300. The etch mask can then be stripped, resulting in the structure of Fig. 3b. In the present example, the pitch between adjacent spacer bars 311 can be 4.2 ~.m and the width of the spacer bars can be 3.0 ~.m.
3o In Fig. 3c, polysilicon 320 can be deposited by chemical vapor deposition to fill in the regions between the silica spacer bars 311. Again, the polysilicon thickness can be greater than the desired final thickness of the first structured layer 340. Depositing the polysilicon 320 generally leads to a complex and non-planar surface 321. Such a rough and uneven surface could result in a poor quality photonic crystal, due to scattering and uncontrolled reflections at the growth surface. Therefore, chemical-mechanical-polishing (CMP) of the growth surface is performed to planarize the growth surface prior to deposition of s subsequent structural layers. CMP of the general type used in the present invention is disclosed in U.S. Patent 5,998,298 to Fleming et al., which is incorporated herein by reference.
As shown in Fig. 3d, a first structured layer 340 comprising a planar pattern of silica spacer bars 311 and polysilicon rods 341 is thereby produced.
to The polysilicon rods 341 are elongate, roughly rectangular in cross section, and can be 1.2 ~,m wide and 1.6 wm thick.
As shown in Fig. 3e, repeating the same basic set of growth and processing steps, multiple structured layers 340 can be grown on top of the substrate 300 to form the desired photonic lattice structure 350 with polysilicon.
~s To form the Lincoln-Log structure, the orientation of the polysilicon rods 341 is rotated 90° between each structured layer 340, and between every other layer the rods 341 are shifted relative to each other by half of the pitch d. The structure 350 thereby has a face-centered-tetragonal lattice symmetry.
As shown in Fig. 3f, the polysilicon rods 341 can then be removed to form 2o the lattice structure mold 360. The polysilicon rods 341 can be removed using a 6M, 85°C KOH etch, which has a selectivity of 100:1 (Si to Si02). Over-etch during the KOH process, which is desirable to ensure the removal of all the polysilicon 341, can result in the formation of a "V" structure 361 on the bottom of the layer 340 contacting the silicon substrate 300. This is due to etching of the 2s underlying silicon substrate 300 and is dependent on the substrate crystallographic orientation. The KOH etch effectively stops when the etch-front encounters the slow etching (111 ) planes of the silicon substrate 300, thereby forming the "V" groove 361.
As shown in Fig 3g, the lattice structure mold 360 can be backfilled with a 3o structural material. A variety of deposition processes, such as chemical vapor deposition (CVD), electroplating, or infiltration with spin-on glasses or nanoparticles, can be used for the backfilling of the mold 360, so long as the sacrificial material (e.g., silica) can later be selectively removed from the s backfilled structural material. For example, III-V compound semiconductors, II-VI
materials, single and mixed oxides, nitrides, oxynitrides, metals, and metal alloys can be deposited by CVD. A precursor conducting coating can be applied to the lattice structure mold 360 and a wide variety of metals can be electroplated from s a solution to backfill the mold 360. Typical electroplated metals include copper, nickel, gold, iron, silver, cobalt, and chromium.
The lattice structure mold 360 can be backfilled with tungsten via CVD to form tungsten rods 370 embedded in the silica mold material 311. A precursor nm thick TiN adhesion layer (not shown) can be deposited on the mold 360 by ~o reactive ion sputtering, since the blanket CVD tungsten film does not adhere to silicon dioxide. Tungsten can be deposited at high pressure (e.g., 90 Torr) from WF6 and H2. The chemical vapor deposition of tungsten results in films of very high purity. The tungsten film can have a resistivity of 10 g,Ohm-cm.
Backfilling of the mold 360 with CVD tungsten 370 can result is a rough and uneven tungsten ~s growth surface 371 on the top surface of the mold 360.
As shown in Fig. 3h the top surface of the backfilled mold 360 can planarized by CMP to remove the excess tungsten. A scanning electron micrograph of a tungsten-backfilled, planarized mold 360 is shown in Fig. 4a.
As shown in Fig. 4a, a keyhole 382 can be formed in the center of the more deeply 2o embedded lines of the tungsten rods 370, since the step coverage of the CVD
tungsten deposition process is not 100%. However, the film thickness is far greater than the skin depth of tungsten for electromagnetic radiation in the visible and infrared.
Finally, as shown in Fig. 3i, the silica spacer bars 311 can be removed 2s from the tungsten-backfilled and planarized lattice structure mold 360 by selective etching with a 1:1 HF-based solution. The result is a 3D tungsten photonic crystal 380 comprising stacked tungsten rods 370 on the silicon substrate 300. Fig. 4b shows a scanning electron micrograph of the four-layer tungsten photonic crystal 380 comprising the stacked tungsten rods 370 on the silicon substrate 300. The 3o tungsten photonic crystal 380 has a stacking sequence that repeats itself every four layers, and has a face-center-tetragonal lattice symmetry. The tungsten rod 370 width is 1.2 ~.m, rod-to-rod spacing is 4.2 ~,m and the filling fraction of the high index tungsten is 28%. The tungsten photonic crystal 380 retains sufficient structural integrity to be handled readily.
This fabrication process can be extended to create almost any interconnected photonic crystal having selective emissivity at visible or infrared s wavelengths. For example, current state-of-the-art silicon integrated circuit processing tools are capable of shrinking the minimum feature sizes to those required for structures that have photonic bandgaps in the near infrared and have selective emissivity in the visible. See, e.g., "International Technology Roadmap for Semiconductors," 1999 Edition [retrieved on 2001-08-09]. Retrieved from the io Internet:<URL: http://public.itrs.net/files/1999_SIA Roadmap/Home.htm>.
Optical Properties of the Tungsten Photonic Crystal The optical properties of the 3D tungsten photonic crystal 380 fabricated according to the above process were characterized using a Fourier-transform infrared measurement system for wavelengths ranging from 1.5 to 25 p.m. To is obtain reflectance (R), a sample spectrum was taken from a 3D tungsten photonic crystal 380 first and then normalized to a reference spectrum of a uniform silver mirror. To find the absolute transmittance (T), a transmission spectrum taken from a tungsten photonic crystal 380 was normalized to that of a bare silicon wafer. This normalization procedure was to calibrate away extrinsic 2o effects, such as light reflection at the air-silicon interface and absorption of the silicon substrate 300.
Figure 5 shows the absolute reflectance spectrum 510 and transmittance spectrum 520 of a four-layer tungsten photonic crystal 380. The dashed line shows the transmittance of a 6000 uniform tungsten film for reference. Light 2s propagates along the <001 > direction of the tungsten photonic crystal 380 and is unpolarized. The reflectance 510 exhibits oscillations at ~.< 5.5 p,m, raises sharply at 7~~ 6 p.m (the band edge) and finally reaches a high reflectance of 90% for ~,> 8 ~.m. Correspondingly, the transmittance 520 shows distinct peaks at 7~< 5.5 pm, decreases sharply at ~,~ 6 pm (the band edge) and then vanishes to below 1 %
for 30 ~,> 8 p.m. The simultaneous high R and low T at wavelengths greater than 8 wm indicates the existence of a photonic band gap in the tungsten photonic crystal.
The attenuation is ~30dB at ~,=10 pm for the four-layer tungsten photonic crystal to 380, or equivalently a 7.5dB attenuation per layer. The multiple oscillations at ~,<
5.5 ~.m are attributed to photonic density-of-states oscillations in the photonic allowed band.
As shown in Fig. 6, tilt-angle reflection spectra were taken to determine the s angular dependence of the photonic band gap. For tilt-angle transmission measurements, the tungsten photonic crystal 380 was mounted on a rotational stage and the rotational angles spanned from light incident angles from 0° to 60°, measured from the surface normal (i.e., the <001 > direction). The crystal orientation is tilted from the <001> to <110> axes. The light incident angle is to therefore systematically tilted away from G-X' toward G-L of the first Brillouin zone. Four tilt-angle spectra are shown in Fig. 6, for light incident angles of 10, 30, 40, and 50°, respectively. As the light incident angle is increased, the band edge position moves from ~, ~ 6 ~,m for q = 10° to ~, ~ 8 ~.m for q =
50°. Both the oscillating features at 7~ < 6 ~.m and the high reflectance at longer wavelength is remain for all light incident angles. Therefore, a large complete 3D
photonic band gap exists, from 7~ ~ 8~.m to ~. > 20~,m, for the tungsten photonic crystal 380.
Figure 7 shows the theoretical transmission spectra for tungsten photonic crystals of different number-of-layers, N=2, 4 and 6, plotted in a log-to-log scale.
The dashed line is a reference spectrum for a uniform 6000A tungsten film. The zo theoretical transmission spectra were calculated according to the method of Sigalas et al. in Phys. Rev. B52, 11744 (1995). The transmittance is very low in the bandgap (T< 10-$ for N = 6 layers), which is consistent with the small metallic skin-depth (300-500 A for 1 ~.m < 7~ < 25 ~.m), and is nearly independent of wavelength. The crystal spectrum, on the other hand, exhibits a much higher as transmission (T~10-~) in the allowed band, suggesting that photonic transport in the metallic allowed band is not dominated by metallic attenuation. Moreover, a strong dependence on the number-of-layers of transmittance is observed in the band gap (7~ > 8 ~.m). This number-of-layers-dependence indicates that transmittance attenuation at ~, > 8 ~m scales with layer-thickness of the fabricated 3o structure, but not the metallic skin depth. Hence, the observed low transmittance is due primarily to the photonic band gap effect. The attenuation constant in the band gap is extraordinarily large - about 8, 14 and 16 dB per layer at ~, =
10, 20 and 40 ~.m, respectively. This suggests that as few as four to six crystal layers are sufficient for achieving strong electromagnetic wave attenuation.
Such an extraordinarily large band gap is ideally suited for suppressing broadband Blackbody radiation in the infrared and re-cycling radiant energy into visible spectrum. Figure 8 shows the spectral emissivity of the tungsten photonic crystal 380. The crystal 380 has a photonic bandgap (region with nearly zero emissivity) over a large range in the far infrared (8 ~.m < ~, < 25 ~,m) portion of the spectrum. The very large photonic bandgap and large reduction in emissivity in the far infrared is due to the use of metal for the photonic crystal. In the photon to recycling process, the photonic band gap completely frustrates infrared thermal emission and selectively forces the radiation into near-infrared and visible emission. Consequently, energy is not wasted in heat generation, but rather re-channeled into a useful emission band. The lattice constant and refractory material of the photonic crystal can be determined by the fabrication process.
is Therefore, the emission band can be tailored to be in the visible when the photonic crystal is heated up to an elevated temperature of >1500°C, giving rise to a highly efficient incandescent lamp.
It will be understood that the above description is merely illustrative of the applications of the principles of the present invention, the scope of which is to be 2o determined by the claims viewed in light of the specification. Other variants and modifications of the invention will be apparent to those of skill in the art.
Claims (21)
1. A photonically engineered incandescent emitter, comprising a photonic crystal having a characteristic lattice constant and comprising a refractory emitter material having a first dielectric constant and at least one other lattice material having at least one other dielectric constant and wherein the characteristic lattice constant, the refractory emitter material, and the at least one other lattice material are chosen so as to create a photonic bandgap that modifies thermal emission above a cutoff wavelength.
2. ~The photonically engineered incandescent emitter of claim 1, wherein the at least one other lattice material comprises air.
3. ~The photonically engineered incandescent emitter of claim 1, wherein the refractory emitter material comprises a metal.
4. ~The photonically engineered incandescent emitter of claim 3, wherein the metal comprises tungsten or a tungsten alloy.
5. ~The photonically engineered incandescent emitter of claim 1, wherein the refractory emitter material comprises anon-metal.
6. ~The photonically engineered incandescent emitter of claim 5, wherein the non-metal comprises silicon carbide, carbon, or titanic.
7. ~The photonically engineered incandescent emitter of claim 1, wherein the characteristic lattice constant is less than 10 microns.
8. ~The photonically engineered incandescent emitter of claim 1, wherein the characteristic lattice constant is less than 5 microns.
9. ~The photonically engineered incandescent emitter of claim 1, wherein the characteristic lattice constant is less than 1 micron.
10. ~The photonically engineered incandescent emitter of claim 1, wherein the photonic crystal has a complete bandgap.
11. ~The photonically engineered incandescent emitter of claim 1, wherein the photonic crystal is two-dimensional.
12. The photonically engineered incandescent emitter of claim 1, wherein the photonic crystal is three-dimensional.
13. A method for fabricating a photonic crystal structure, comprising:
a) forming a lattice structure mold of a sacrificial mold material on a substrate;
b) depositing a structural material into the lattice structure mold; and c) removing the sacrificial material from the lattice structure mold to form the photonic crystal.
a) forming a lattice structure mold of a sacrificial mold material on a substrate;
b) depositing a structural material into the lattice structure mold; and c) removing the sacrificial material from the lattice structure mold to form the photonic crystal.
14. The method of claim 13, further comprising polishing the surface of the deposited emitter material prior to step c).
15. The method of claim 14, wherein the polishing is chemical-mechanical polishing.
16. The method of claim 13, wherein the forming step a) comprises sequential deposition of a cavity-forming material in alternating patterned layers of the sacrificial mold material.
17. The method of claim 13, wherein the depositing step b) comprises chemical vapor deposition, electroplating, or nanoparticle infiltration.
18. The method of claim 13, wherein the sacrificial mold material comprises silica.
19. The method of claim 13, wherein the substrate comprises silicon.
20. The method of claim 16, wherein the cavity-forming material comprises polysilicon.
21. The method of claim 13, wherein the structural material is selected from the group of materials consisting of III-V compound semiconductors, II-VI
semiconductors, single and mixed oxides, nitrides, oxynitrides, metals, and metal alloys.
semiconductors, single and mixed oxides, nitrides, oxynitrides, metals, and metal alloys.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US09/940,962 US6611085B1 (en) | 2001-08-27 | 2001-08-27 | Photonically engineered incandescent emitter |
US09/940,962 | 2001-08-27 | ||
PCT/US2002/027623 WO2003019680A1 (en) | 2001-08-27 | 2002-08-26 | Photonically engineered incandescent emitter |
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CA2457224A1 true CA2457224A1 (en) | 2003-03-06 |
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CA002457224A Abandoned CA2457224A1 (en) | 2001-08-27 | 2002-08-26 | Photonically engineered incandescent emitter |
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US (3) | US6611085B1 (en) |
EP (1) | EP1423881A4 (en) |
JP (1) | JP2005501383A (en) |
CN (1) | CN1550046A (en) |
CA (1) | CA2457224A1 (en) |
WO (1) | WO2003019680A1 (en) |
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- 2001-08-27 US US09/940,962 patent/US6611085B1/en not_active Expired - Lifetime
-
2002
- 2002-04-03 US US10/114,820 patent/US6583350B1/en not_active Expired - Lifetime
- 2002-08-26 JP JP2003523023A patent/JP2005501383A/en active Pending
- 2002-08-26 WO PCT/US2002/027623 patent/WO2003019680A1/en not_active Application Discontinuation
- 2002-08-26 EP EP02770444A patent/EP1423881A4/en not_active Withdrawn
- 2002-08-26 CA CA002457224A patent/CA2457224A1/en not_active Abandoned
- 2002-08-26 CN CNA028170075A patent/CN1550046A/en active Pending
-
2003
- 2003-01-23 US US10/350,711 patent/US6869330B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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EP1423881A4 (en) | 2007-05-09 |
US20030132705A1 (en) | 2003-07-17 |
EP1423881A1 (en) | 2004-06-02 |
CN1550046A (en) | 2004-11-24 |
US6583350B1 (en) | 2003-06-24 |
US6611085B1 (en) | 2003-08-26 |
WO2003019680A1 (en) | 2003-03-06 |
JP2005501383A (en) | 2005-01-13 |
US6869330B2 (en) | 2005-03-22 |
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