CA2468789A1 - Shaped nanocrystal particles and methods for making the same - Google Patents

Shaped nanocrystal particles and methods for making the same Download PDF

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CA2468789A1
CA2468789A1 CA002468789A CA2468789A CA2468789A1 CA 2468789 A1 CA2468789 A1 CA 2468789A1 CA 002468789 A CA002468789 A CA 002468789A CA 2468789 A CA2468789 A CA 2468789A CA 2468789 A1 CA2468789 A1 CA 2468789A1
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core
arm
crystal structure
group
nanocrystal particle
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CA2468789C (en
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A. Paul Alivisatos
Erik C. Scher
Liberato Manna
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University of California
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

Shaped nanocrystal particles (10) and methods for making shaped nanocrystal particles (10) are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle (10). It includes (a) forming a core (12) having a first crystal structure in a solution, (b) forming a first arm (14a ) extending from the core having a second crystal structure in the solution, a nd (c) forming a second arm (14b) extending from the core (12) having the secon d crystal structure in the solution.

Claims (84)

1. A process of forming a nanocrystal particle, the process comprising:
(a) providing a core having a first crystal structure in a solution; and (b) forming an arm extending from the core having a second crystal structure in the solution, wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
2. The process of claim 1 wherein the arm is a first arm, and wherein the process further comprises:
forming at least a second arm extending from the core in the solution, wherein the second arm has the second crystal structure.
3. The process of claim 1 wherein the arm is a first arm, and wherein the process further comprises:
forming at least a second arm extending from the core in the solution, wherein the second arm has the second crystal structure;
forming at least a third arm extending from the core in the solution, wherein the third arm has the second crystal structure; and forming at least a fourth arm extending from the core in the solution, wherein the fourth arm has the second crystal structure.
4. The process of claim 3 wherein the first, second, third, and fourth arms are formed substantially simultaneously.
5. The process of claim 3 wherein the first, second, third, and fourth arms are formed at different times.
6. The process of claim 3 wherein the first, second, third, and fourth arms have substantially the same lengths.
7. The process of claim 3 wherein the first, second, third, and fourth arms have different lengths.
8. The process of claim 1 wherein the nanocrystal particle is a monopod.
9. The process of claim 1 wherein the first crystal structure is a cubic crystal structure, and the second crystal structure is a hexagonal crystal structure.
10. The process of claim 1 further comprising:
forming second, third and fourth arms extending from the core to form a tetrapod shaped nanocrystal particle.
11. The process of claim 1 wherein the arm is a first arm, and wherein the process further comprises:
forming a second arm extending from the core, wherein the second arm has the second crystal structure, and wherein the first and second arms are formed substantially simultaneously.
12. The process of claim 1 wherein the core and the arm comprise a Group III-V semiconductor.
13. The process of claim 1 wherein the core and the arm are formed using a mixture of surfactants.
14. The process of claim 1 wherein the core and the arm are formed using a mixture of surfactants, wherein the mixture of surfactants comprises at least two selected from the group consisting of an alkyl phosphonic acid, an alkyl phosphinic acid, an alkyl phosphine oxide, an alkyl phosphine, an alkyl amine, and a carboxylic acid.
15. The process of claim 1 wherein the core is a first core, and the arm is a first arm that includes a proximate end proximate to the first core and a distal end distal to the first core, and wherein the process further comprises:
(d) forming a second core at the distal end of the first arm; and (e) forming additional arms extending from the second core.
16. The process of claim 1 wherein the core and the first arm are formed in a hot surfactant mixture wherein precursors used for forming the nanocrystal particle are injected sequentially into the hot surfactant mixture.
17. A nanocrystal particle made by the process of claim 1.
18. A photovoltaic device comprising the nanocrystal particle of claim 17.
19. A process for forming semiconductor nanocrystal particles comprising:
introducing semiconductor nanocrystal particle precursors into a mixture of surfactants capable of promoting the growth of tetrapod shaped semiconductor nanocrystal particles; and forming tetrapod shaped semiconductor nanocrystal particles, wherein each of the nanocrystal particles comprises a Group IV
semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
20. The process of claim 19 wherein the semiconductor nanocrystal particles have shapes comprising branched tetrapod shapes.
21. The process of claim 19 wherein the precursors are introduced into the mixture at a temperature between about 20 °C to about 360 °C.
22. The process of claim 19 wherein the precursors are introduced into the heated mixture of surfactants by adding different precursors separately into the mixture of surfactants.
23. The process of claim 19 wherein the precursors are introduced into the heated mixture of surfactants by adding different precursors together into the mixture of surfactants.
24. The process of claim 19 wherein the nanocrystal particles comprise a Group III-V or a Group II-VI semiconductor.
25. The process of claim 19 wherein the mixture comprises at least one selected from the group consisting an alkyl phosphonic acid, an alkyl phosphinic acid, an alkyl phosphine oxide, an alkyl phosphine, an alkyl amine, and a carboxylic acid.
26. A nanocrystal particle made by the process of claim 19.
27. A nanocrystal particle comprising:
a core having a first crystal structure; and at least an arm extending from the core having a second crystal structure, wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
28. The nanocrystal particle of claim 27 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure.
29. The nanocrystal particle of claim 27 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure; and at least a third arm extending from the core, the third arm having the second crystal structure.
30. The nanocrystal particle of claim 27 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure;
at least a third arm extending from the core, the third arm having the second crystal structure; and at least a fourth arm extending from the core, the fourth arm having the second crystal structure.
31. The nanocrystal particle of claim 27 further comprising amphiphilic molecules bound to the surfaces of the arm.
32. The nanocrystal particle of claim 27 further comprising second, third, and fourth arms extending from the core, wherein the nanocrystal particle is a tetrapod shaped nanocrystal particle.
33. The nanocrystal particle of claim 27 wherein the core and the arm comprise a compound semiconductor.
34. The nanocrystal particle of claim 27 wherein the core is a first core, and wherein the arm is a first arm that has a proximate end proximate the first core and a distal end distal to the first core, and wherein the particle further comprises:
a second core at the distal end of the first arm and additional arms extending from the second core.
35. The nanocrystal particle of claim 27 wherein the first crystal structure is a zinc-blende crystal structure, and the second crystal structure is a wurtzite crystal structure.
36. The nanocrystal particle of claim 27 wherein the core has a diameter from about 3 to about 4 nanometers and the arm has a length of from about 4 to about 100 nanometers.
37. The nanocrystal particle of claim 27 wherein the core and the arm comprise CdTe.
38. A photovoltaic device comprising the nanocrystal particle of claim 27.
39. A branched nanocrystal particle comprising:
a core;
at least a first arm extending from the core; and at least a second arm extending from the core, wherein the second arm forms a branch with respect to the first arm, and wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
40. The branched nanocrystal particle of claim 39 further comprising:
a third arm extending from the core, and a fourth arm extending from the core, wherein the first, second, third, and fourth arms, and the core form a tetrapod.
41. The branched nanocrystal particle of claim 39 wherein the core is a first core, and wherein the first arm includes a proximate end proximate to the first core and a distal end distal to the first core, and wherein the branched nanocrystal particle further comprises:
a second core at the distal end of the first nanocrystal particle; and additional arms extending from the second core.
42. The branched nanocrystal particle of claim 39 further comprising a surfactant molecule attached to the core, the first arm, or the second arm.
43. The branched nanocrystal particle of claim 39 wherein the core has a diameter of about 3 nm to about 4 nm, and wherein each of the first and second arms have a length from about 4 nm to about 100 nm.
44. The branched nanocrystal particle of claim 39 wherein the nanocrystal particle comprises CdTe.
45. The branched nanocrystal particle of claim 39 wherein the core has a first crystal structure and wherein the first and second arms have a second crystal structure.
46. The branched nanocrystal particle of claim 39 wherein the core has a zinc blende crystal structure and wherein the first and second arms have a wurtzite crystal structure.
47. A tetrapod shaped nanocrystal particle comprising:
a core having a first crystal structure;
a first arm extending from the core;
a second arm extending from the core;
a third arm extending from the core; and a fourth arm extending from the core, wherein the first, second, third, and fourth arms have a second crystal structure, wherein the first crystal structure is different than the second crystal structure, and wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the Group consisting of O, S, Te, and Po.
48. The tetrapod shaped nanocrystal particle of claim 47 wherein the tetrapod shaped nanocrystal comprises a compound semiconductor.
49. The tetrapod shaped nanocrystal particle of claim 47 wherein the tetrapod shaped nanocrystal comprises CdTe.
50. The tetrapod shaped nanocrystal particle of claim 47 wherein the core has a diameter from about 3 to about 4 nanometers and wherein the first, second, third, and fourth arms each have a length of from about 4 to about 100 nanometers.
51. The tetrapod shaped nanocrystal particle of claim 47 wherein first crystal structure is a cubic crystal structure and the second crystal structure is a hexagonal crystal structure.
52. The tetrapod shaped nanocrystal particle of claim 47 wherein first crystal structure is a zinc blende crystal structure and the second crystal structure is a wurtzite crystal structure.
53. The tetrapod shaped nanocrystal particle of claim 47 wherein first crystal structure is a zinc blende crystal structure and the second crystal structure is a wurtzite crystal structure.
54. The tetrapod shaped nanocrystal particle of claim 47 comprising a metal.
55. The tetrapod shaped nanocrystal particle of claim 47 further comprising a surfactant molecule bound to at least one of the first, second, third, or fourth arms.
56. The tetrapod shaped nanocrystal particle of claim 47 wherein each of the first, second, third, and fourth arms has an aspect ratio greater than about 1Ø
57. The tetrapod shaped nanocrystal particle of claim 47 wherein the first, second, third, and fourth arms each have substantially the same length.
58. A photovoltaic device comprising:
the tetrapod shaped nanocrystal particle of claim 47.
59. A nanocrystal particle in the form a teardrop or an arrow, wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V
semiconductor, a metal, a dielectric material, or a Group II-VI semiconductor including at least one Group II
element and at least one Group VI element selected from the Group consisting of O, S, Te, and Po.
60. The nanocrystal particle of claim 59 wherein the nanocrystal particle comprises CdTe.
61. The nanocrystal particle of claim 59 wherein the nanocrystal particle comprises a Group III-V or a Group II-VI semiconductor.
62. A process for forming shaped nanocrystal particles comprising:
(a) mixing semiconductor precursors and a mixture of surfactants to form a solution; and (b) forming nanocrystal particles in the solution, wherein the nanocrystal particles are in the form of teardrops or arrows, and wherein the nanocrystal particles comprise a Group IV semiconductor, Group III-V
semiconductor, a metal, a dielectric material, or a Group II-VI semiconductor including at least one Group II element and at least one Group VI element selected from the Group consisting of O, S, Te, and Po.
63. The process of claim 62 wherein the mixture of surfactants comprises a phosphine oxide and an alkylphosphonic acid, wherein the alkylphosphonic acid is greater than about 30 mol %, based on the total amount of surfactant.
64. The process of claim 63 wherein the alkylphosphonic acid is hexylphosphonic acid.
65. The process of claim 62 wherein (a) mixing comprises:
(a) introducing a first amount of the semiconductor precursors into the solution;
(b) waiting for a predetermined amount of time; and then (c) introducing a second amount of the semiconductor precursors into the solution, wherein the nanocrystal particles are in the form of teardrops.
66. The process of claim 62 wherein the nanocrystal particles are in the form of arrows.
67. The process of claim 62 wherein the semiconductor precursors comprise a Group II, Group III, Group IV, Group V, or a Group VI element.
68. The process of claim 62 wherein mixture of surfactants comprises a first surfactant comprising a phosphine oxide and a second surfactant.
69. A photovoltaic device comprising:
a nanocrystal particle comprising a core having a first crystal structure, and at least an arm extending from the core having a second crystal structure.
70. The photovoltaic device of claim 69 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure.
71. The photovoltaic device of claim 69 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure; and at least a third arm extending from the core, the third arm having the second crystal structure.
72. The photovoltaic device of claim 69 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure;
at least a third arm extending from the core, the third arm having the second crystal structure; and at least a fourth arm extending from the core, the fourth arm having the second crystal structure.
73. The photovoltaic device of claim 69 further comprising amphiphilic molecules bound to the surfaces of the arm.
74. The photovoltaic device of claim 69 further comprising second, third, and fourth arms extending from the core, wherein the nanocrystal particle is a tetrapod shaped nanocrystal particle.
75. The photovoltaic device of claim 69 wherein the core and the arm comprise a compound semiconductor.
76. The photovoltaic device of claim 69 wherein the core is a first core, and wherein the arm is a first arm that has a proximate end proximate the first core and a distal end distal to the first core, and wherein the particle further comprises:
a second core at the distal end of the first arm and additional arms extending from the second core.
77. The photovoltaic device of claim 69 wherein the first crystal structure is a zinc-blende crystal structure, and the second crystal structure is a wurtzite crystal structure.
78. The photovoltaic device of claim 69 wherein the core has a diameter from about 3 to about 4 nanometers and the arm has a length of from about 4 to about 100 nanometers.
79. The photovoltaic device of claim 69 wherein the core and the arm comprise CdTe or CdSe.
80. The photovoltaic device of claim 69 further comprising at least a pair of electrodes, and a binder between the pair of electrodes, wherein the nanocrystal particle is in the binder.
81. A photovoltaic device comprising:
a tetrapod shaped nanocrystal particle comprising, a core having a first crystal structure, a first ann extending from the core, a second arm extending from the core, a third arm extending from the core, and a fourth arm extending from the core, wherein the first, second, third, and fourth arms have a second crystal structure, and wherein the first crystal structure is different than the second crystal structure.
82. The photovoltaic device of claim 81 wherein the tetrapod shaped nanocrystal comprises a compound semiconductor.
83. The photovoltaic device of claim 81 wherein the tetrapod shaped nanocrystal comprises CdTe or CdSe.
84. The photovoltaic device of claim 81 further comprising at least a pair of electrodes, and a binder between the pair of electrodes, wherein the nanocrystal particle is in the binder.
CA2468789A 2001-11-30 2002-11-22 Shaped nanocrystal particles and methods for making the same Expired - Lifetime CA2468789C (en)

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