CA2468789A1 - Shaped nanocrystal particles and methods for making the same - Google Patents

Shaped nanocrystal particles and methods for making the same Download PDF

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CA2468789A1
CA2468789A1 CA002468789A CA2468789A CA2468789A1 CA 2468789 A1 CA2468789 A1 CA 2468789A1 CA 002468789 A CA002468789 A CA 002468789A CA 2468789 A CA2468789 A CA 2468789A CA 2468789 A1 CA2468789 A1 CA 2468789A1
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core
arm
crystal structure
group
nanocrystal particle
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CA2468789C (en
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A. Paul Alivisatos
Erik C. Scher
Liberato Manna
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University of California
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

Shaped nanocrystal particles (10) and methods for making shaped nanocrystal particles (10) are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle (10). It includes (a) forming a core (12) having a first crystal structure in a solution, (b) forming a first arm (14a ) extending from the core having a second crystal structure in the solution, a nd (c) forming a second arm (14b) extending from the core (12) having the secon d crystal structure in the solution.

Claims (84)

1. A process of forming a nanocrystal particle, the process comprising:
(a) providing a core having a first crystal structure in a solution; and (b) forming an arm extending from the core having a second crystal structure in the solution, wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
2. The process of claim 1 wherein the arm is a first arm, and wherein the process further comprises:
forming at least a second arm extending from the core in the solution, wherein the second arm has the second crystal structure.
3. The process of claim 1 wherein the arm is a first arm, and wherein the process further comprises:
forming at least a second arm extending from the core in the solution, wherein the second arm has the second crystal structure;
forming at least a third arm extending from the core in the solution, wherein the third arm has the second crystal structure; and forming at least a fourth arm extending from the core in the solution, wherein the fourth arm has the second crystal structure.
4. The process of claim 3 wherein the first, second, third, and fourth arms are formed substantially simultaneously.
5. The process of claim 3 wherein the first, second, third, and fourth arms are formed at different times.
6. The process of claim 3 wherein the first, second, third, and fourth arms have substantially the same lengths.
7. The process of claim 3 wherein the first, second, third, and fourth arms have different lengths.
8. The process of claim 1 wherein the nanocrystal particle is a monopod.
9. The process of claim 1 wherein the first crystal structure is a cubic crystal structure, and the second crystal structure is a hexagonal crystal structure.
10. The process of claim 1 further comprising:
forming second, third and fourth arms extending from the core to form a tetrapod shaped nanocrystal particle.
11. The process of claim 1 wherein the arm is a first arm, and wherein the process further comprises:
forming a second arm extending from the core, wherein the second arm has the second crystal structure, and wherein the first and second arms are formed substantially simultaneously.
12. The process of claim 1 wherein the core and the arm comprise a Group III-V semiconductor.
13. The process of claim 1 wherein the core and the arm are formed using a mixture of surfactants.
14. The process of claim 1 wherein the core and the arm are formed using a mixture of surfactants, wherein the mixture of surfactants comprises at least two selected from the group consisting of an alkyl phosphonic acid, an alkyl phosphinic acid, an alkyl phosphine oxide, an alkyl phosphine, an alkyl amine, and a carboxylic acid.
15. The process of claim 1 wherein the core is a first core, and the arm is a first arm that includes a proximate end proximate to the first core and a distal end distal to the first core, and wherein the process further comprises:
(d) forming a second core at the distal end of the first arm; and (e) forming additional arms extending from the second core.
16. The process of claim 1 wherein the core and the first arm are formed in a hot surfactant mixture wherein precursors used for forming the nanocrystal particle are injected sequentially into the hot surfactant mixture.
17. A nanocrystal particle made by the process of claim 1.
18. A photovoltaic device comprising the nanocrystal particle of claim 17.
19. A process for forming semiconductor nanocrystal particles comprising:
introducing semiconductor nanocrystal particle precursors into a mixture of surfactants capable of promoting the growth of tetrapod shaped semiconductor nanocrystal particles; and forming tetrapod shaped semiconductor nanocrystal particles, wherein each of the nanocrystal particles comprises a Group IV
semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
20. The process of claim 19 wherein the semiconductor nanocrystal particles have shapes comprising branched tetrapod shapes.
21. The process of claim 19 wherein the precursors are introduced into the mixture at a temperature between about 20 °C to about 360 °C.
22. The process of claim 19 wherein the precursors are introduced into the heated mixture of surfactants by adding different precursors separately into the mixture of surfactants.
23. The process of claim 19 wherein the precursors are introduced into the heated mixture of surfactants by adding different precursors together into the mixture of surfactants.
24. The process of claim 19 wherein the nanocrystal particles comprise a Group III-V or a Group II-VI semiconductor.
25. The process of claim 19 wherein the mixture comprises at least one selected from the group consisting an alkyl phosphonic acid, an alkyl phosphinic acid, an alkyl phosphine oxide, an alkyl phosphine, an alkyl amine, and a carboxylic acid.
26. A nanocrystal particle made by the process of claim 19.
27. A nanocrystal particle comprising:
a core having a first crystal structure; and at least an arm extending from the core having a second crystal structure, wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
28. The nanocrystal particle of claim 27 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure.
29. The nanocrystal particle of claim 27 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure; and at least a third arm extending from the core, the third arm having the second crystal structure.
30. The nanocrystal particle of claim 27 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure;
at least a third arm extending from the core, the third arm having the second crystal structure; and at least a fourth arm extending from the core, the fourth arm having the second crystal structure.
31. The nanocrystal particle of claim 27 further comprising amphiphilic molecules bound to the surfaces of the arm.
32. The nanocrystal particle of claim 27 further comprising second, third, and fourth arms extending from the core, wherein the nanocrystal particle is a tetrapod shaped nanocrystal particle.
33. The nanocrystal particle of claim 27 wherein the core and the arm comprise a compound semiconductor.
34. The nanocrystal particle of claim 27 wherein the core is a first core, and wherein the arm is a first arm that has a proximate end proximate the first core and a distal end distal to the first core, and wherein the particle further comprises:
a second core at the distal end of the first arm and additional arms extending from the second core.
35. The nanocrystal particle of claim 27 wherein the first crystal structure is a zinc-blende crystal structure, and the second crystal structure is a wurtzite crystal structure.
36. The nanocrystal particle of claim 27 wherein the core has a diameter from about 3 to about 4 nanometers and the arm has a length of from about 4 to about 100 nanometers.
37. The nanocrystal particle of claim 27 wherein the core and the arm comprise CdTe.
38. A photovoltaic device comprising the nanocrystal particle of claim 27.
39. A branched nanocrystal particle comprising:
a core;
at least a first arm extending from the core; and at least a second arm extending from the core, wherein the second arm forms a branch with respect to the first arm, and wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the group consisting of O, S, Te, and Po.
40. The branched nanocrystal particle of claim 39 further comprising:
a third arm extending from the core, and a fourth arm extending from the core, wherein the first, second, third, and fourth arms, and the core form a tetrapod.
41. The branched nanocrystal particle of claim 39 wherein the core is a first core, and wherein the first arm includes a proximate end proximate to the first core and a distal end distal to the first core, and wherein the branched nanocrystal particle further comprises:
a second core at the distal end of the first nanocrystal particle; and additional arms extending from the second core.
42. The branched nanocrystal particle of claim 39 further comprising a surfactant molecule attached to the core, the first arm, or the second arm.
43. The branched nanocrystal particle of claim 39 wherein the core has a diameter of about 3 nm to about 4 nm, and wherein each of the first and second arms have a length from about 4 nm to about 100 nm.
44. The branched nanocrystal particle of claim 39 wherein the nanocrystal particle comprises CdTe.
45. The branched nanocrystal particle of claim 39 wherein the core has a first crystal structure and wherein the first and second arms have a second crystal structure.
46. The branched nanocrystal particle of claim 39 wherein the core has a zinc blende crystal structure and wherein the first and second arms have a wurtzite crystal structure.
47. A tetrapod shaped nanocrystal particle comprising:
a core having a first crystal structure;
a first arm extending from the core;
a second arm extending from the core;
a third arm extending from the core; and a fourth arm extending from the core, wherein the first, second, third, and fourth arms have a second crystal structure, wherein the first crystal structure is different than the second crystal structure, and wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V semiconductor, a metal, a dielectric material, or a Group II-VI
semiconductor including at least one Group II element and at least one Group VI element selected from the Group consisting of O, S, Te, and Po.
48. The tetrapod shaped nanocrystal particle of claim 47 wherein the tetrapod shaped nanocrystal comprises a compound semiconductor.
49. The tetrapod shaped nanocrystal particle of claim 47 wherein the tetrapod shaped nanocrystal comprises CdTe.
50. The tetrapod shaped nanocrystal particle of claim 47 wherein the core has a diameter from about 3 to about 4 nanometers and wherein the first, second, third, and fourth arms each have a length of from about 4 to about 100 nanometers.
51. The tetrapod shaped nanocrystal particle of claim 47 wherein first crystal structure is a cubic crystal structure and the second crystal structure is a hexagonal crystal structure.
52. The tetrapod shaped nanocrystal particle of claim 47 wherein first crystal structure is a zinc blende crystal structure and the second crystal structure is a wurtzite crystal structure.
53. The tetrapod shaped nanocrystal particle of claim 47 wherein first crystal structure is a zinc blende crystal structure and the second crystal structure is a wurtzite crystal structure.
54. The tetrapod shaped nanocrystal particle of claim 47 comprising a metal.
55. The tetrapod shaped nanocrystal particle of claim 47 further comprising a surfactant molecule bound to at least one of the first, second, third, or fourth arms.
56. The tetrapod shaped nanocrystal particle of claim 47 wherein each of the first, second, third, and fourth arms has an aspect ratio greater than about 1Ø
57. The tetrapod shaped nanocrystal particle of claim 47 wherein the first, second, third, and fourth arms each have substantially the same length.
58. A photovoltaic device comprising:
the tetrapod shaped nanocrystal particle of claim 47.
59. A nanocrystal particle in the form a teardrop or an arrow, wherein the nanocrystal particle comprises a Group IV semiconductor, Group III-V
semiconductor, a metal, a dielectric material, or a Group II-VI semiconductor including at least one Group II
element and at least one Group VI element selected from the Group consisting of O, S, Te, and Po.
60. The nanocrystal particle of claim 59 wherein the nanocrystal particle comprises CdTe.
61. The nanocrystal particle of claim 59 wherein the nanocrystal particle comprises a Group III-V or a Group II-VI semiconductor.
62. A process for forming shaped nanocrystal particles comprising:
(a) mixing semiconductor precursors and a mixture of surfactants to form a solution; and (b) forming nanocrystal particles in the solution, wherein the nanocrystal particles are in the form of teardrops or arrows, and wherein the nanocrystal particles comprise a Group IV semiconductor, Group III-V
semiconductor, a metal, a dielectric material, or a Group II-VI semiconductor including at least one Group II element and at least one Group VI element selected from the Group consisting of O, S, Te, and Po.
63. The process of claim 62 wherein the mixture of surfactants comprises a phosphine oxide and an alkylphosphonic acid, wherein the alkylphosphonic acid is greater than about 30 mol %, based on the total amount of surfactant.
64. The process of claim 63 wherein the alkylphosphonic acid is hexylphosphonic acid.
65. The process of claim 62 wherein (a) mixing comprises:
(a) introducing a first amount of the semiconductor precursors into the solution;
(b) waiting for a predetermined amount of time; and then (c) introducing a second amount of the semiconductor precursors into the solution, wherein the nanocrystal particles are in the form of teardrops.
66. The process of claim 62 wherein the nanocrystal particles are in the form of arrows.
67. The process of claim 62 wherein the semiconductor precursors comprise a Group II, Group III, Group IV, Group V, or a Group VI element.
68. The process of claim 62 wherein mixture of surfactants comprises a first surfactant comprising a phosphine oxide and a second surfactant.
69. A photovoltaic device comprising:
a nanocrystal particle comprising a core having a first crystal structure, and at least an arm extending from the core having a second crystal structure.
70. The photovoltaic device of claim 69 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure.
71. The photovoltaic device of claim 69 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure; and at least a third arm extending from the core, the third arm having the second crystal structure.
72. The photovoltaic device of claim 69 wherein the arm is a first arm, and wherein the nanocrystal particle further comprises:
at least a second arm extending from the core, the second arm having the second crystal structure;
at least a third arm extending from the core, the third arm having the second crystal structure; and at least a fourth arm extending from the core, the fourth arm having the second crystal structure.
73. The photovoltaic device of claim 69 further comprising amphiphilic molecules bound to the surfaces of the arm.
74. The photovoltaic device of claim 69 further comprising second, third, and fourth arms extending from the core, wherein the nanocrystal particle is a tetrapod shaped nanocrystal particle.
75. The photovoltaic device of claim 69 wherein the core and the arm comprise a compound semiconductor.
76. The photovoltaic device of claim 69 wherein the core is a first core, and wherein the arm is a first arm that has a proximate end proximate the first core and a distal end distal to the first core, and wherein the particle further comprises:
a second core at the distal end of the first arm and additional arms extending from the second core.
77. The photovoltaic device of claim 69 wherein the first crystal structure is a zinc-blende crystal structure, and the second crystal structure is a wurtzite crystal structure.
78. The photovoltaic device of claim 69 wherein the core has a diameter from about 3 to about 4 nanometers and the arm has a length of from about 4 to about 100 nanometers.
79. The photovoltaic device of claim 69 wherein the core and the arm comprise CdTe or CdSe.
80. The photovoltaic device of claim 69 further comprising at least a pair of electrodes, and a binder between the pair of electrodes, wherein the nanocrystal particle is in the binder.
81. A photovoltaic device comprising:
a tetrapod shaped nanocrystal particle comprising, a core having a first crystal structure, a first ann extending from the core, a second arm extending from the core, a third arm extending from the core, and a fourth arm extending from the core, wherein the first, second, third, and fourth arms have a second crystal structure, and wherein the first crystal structure is different than the second crystal structure.
82. The photovoltaic device of claim 81 wherein the tetrapod shaped nanocrystal comprises a compound semiconductor.
83. The photovoltaic device of claim 81 wherein the tetrapod shaped nanocrystal comprises CdTe or CdSe.
84. The photovoltaic device of claim 81 further comprising at least a pair of electrodes, and a binder between the pair of electrodes, wherein the nanocrystal particle is in the binder.
CA2468789A 2001-11-30 2002-11-22 Shaped nanocrystal particles and methods for making the same Expired - Lifetime CA2468789C (en)

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Families Citing this family (227)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855202B2 (en) * 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6919119B2 (en) * 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
US7135054B2 (en) * 2001-09-26 2006-11-14 Northwestern University Nanoprisms and method of making them
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
US7515333B1 (en) 2002-06-13 2009-04-07 Nanosy's, Inc. Nanotechnology-enabled optoelectronics
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004023527A2 (en) * 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US20050126628A1 (en) * 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
AU2003302321A1 (en) * 2002-09-12 2004-06-23 The Trustees Of Boston College Metal oxide nanostructures with hierarchical morphology
EP1652218A2 (en) 2003-08-04 2006-05-03 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
US7160489B2 (en) * 2003-10-10 2007-01-09 The Board Of Trustees Of The University Of Illinois Controlled chemical aerosol flow synthesis of nanometer-sized particles and other nanometer-sized products
US7662706B2 (en) * 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
US9040090B2 (en) 2003-12-19 2015-05-26 The University Of North Carolina At Chapel Hill Isolated and fixed micro and nano structures and methods thereof
JP6067954B2 (en) 2003-12-19 2017-01-25 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒルＴｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｎｏｒｔｈ Ｃａｒｏｌｉｎａ Ａｔ Ｃｈａｐｅｌ Ｈｉｌｌ Nano-sized article and nano-sized article manufactured by a method for producing a separation structure using soft lithography or imprint lithography
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US7374807B2 (en) * 2004-01-15 2008-05-20 Nanosys, Inc. Nanocrystal doped matrixes
US20050167646A1 (en) 2004-02-04 2005-08-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem Nanosubstrate with conductive zone and method for its selective preparation
US20050214190A1 (en) * 2004-03-25 2005-09-29 Seoul National University Method of synthesizing nanorods by reaction of metal-surfactant complexes injected using a syringe pump
US7019391B2 (en) * 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
US20050218397A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics for programmable array IC
US7862624B2 (en) * 2004-04-06 2011-01-04 Bao Tran Nano-particles on fabric or textile
US20050218398A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics
US7330369B2 (en) 2004-04-06 2008-02-12 Bao Tran NANO-electronic memory array
CN1232608C (en) * 2004-04-06 2005-12-21 中国科学院长春应用化学研究所 Method for synthesizing nano semiconductor luminescence material on interface bewteen liquid-liquid
US7742322B2 (en) 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7746681B2 (en) 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
WO2005101530A1 (en) 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
WO2006076027A2 (en) * 2004-05-17 2006-07-20 Cambrios Technology Corp. Biofabrication of transistors including field effect transistors
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US8093494B2 (en) * 2004-11-10 2012-01-10 The Regents Of The University Of California Methods of making functionalized nanorods
WO2006073562A2 (en) * 2004-11-17 2006-07-13 Nanosys, Inc. Photoactive devices and components with enhanced efficiency
US20060148535A1 (en) * 2004-12-30 2006-07-06 Schaefer Bradley R Call setup for a wireless mobile network and supporting method, apparatus, and readable medium
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US7635518B1 (en) * 2005-02-04 2009-12-22 University Of Louisiana At Lafayette Dendritic magnetic nanostructures and method for making same
US7671398B2 (en) * 2005-02-23 2010-03-02 Tran Bao Q Nano memory, light, energy, antenna and strand-based systems and methods
US7531209B2 (en) * 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
US20060225162A1 (en) * 2005-03-30 2006-10-05 Sungsoo Yi Method of making a substrate structure with enhanced surface area
WO2006110341A2 (en) * 2005-04-01 2006-10-19 North Carolina State University Nano-structured photovoltaic solar cells and related methods
JP4870383B2 (en) * 2005-05-06 2012-02-08 富士フイルム株式会社 Method for concentrating nanoparticles
JP4993875B2 (en) * 2005-05-06 2012-08-08 富士フイルム株式会社 Method for dispersing aggregated nanoparticles
KR20080018178A (en) * 2005-05-06 2008-02-27 후지필름 가부시키가이샤 Method of concentrating nanoparticles and method of deaggregating aggregated nanoparticles
KR101266569B1 (en) 2005-05-09 2013-05-22 후지필름 가부시키가이샤 Method for producing organic particle dispersion liquid
US9297092B2 (en) 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
SG150517A1 (en) * 2005-08-12 2009-03-30 Cambrios Technologies Corp Nanowires-based transparent conductors
US7528060B1 (en) 2005-10-27 2009-05-05 University Of Puerto Rico Branched nanostructures and method of synthesizing the same
US8148276B2 (en) 2005-11-28 2012-04-03 University Of Hawaii Three-dimensionally reinforced multifunctional nanocomposites
US7658870B2 (en) * 2005-12-20 2010-02-09 University Of Hawaii Polymer matrix composites with nano-scale reinforcements
EP1969164A4 (en) * 2005-12-21 2011-01-26 Univ New York State Res Found Non-spherical semiconductor nanocrystals and methods of making them
US7394094B2 (en) * 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
US8084685B2 (en) * 2006-01-12 2011-12-27 Heliovolt Corporation Apparatus for making controlled segregated phase domain structures
WO2008060309A2 (en) 2006-01-12 2008-05-22 University Of Arkansas Technology Development Foundation Tio2 nanostructures, membranes and films, and applications of same
US20070160763A1 (en) * 2006-01-12 2007-07-12 Stanbery Billy J Methods of making controlled segregated phase domain structures
US7408366B2 (en) * 2006-02-13 2008-08-05 Georgia Tech Research Corporation Probe tips and method of making same
US8849087B2 (en) * 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2007143029A1 (en) * 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous materials derived from polymer composites
WO2007143026A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
WO2007143025A2 (en) * 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US9212056B2 (en) 2006-06-02 2015-12-15 Qd Vision, Inc. Nanoparticle including multi-functional ligand and method
US7393699B2 (en) 2006-06-12 2008-07-01 Tran Bao Q NANO-electronics
WO2008011051A1 (en) * 2006-07-17 2008-01-24 Liquidia Technologies, Inc. Nanoparticle fabrication methods, systems, and materials
WO2008027571A2 (en) * 2006-08-30 2008-03-06 Liquidia Technologies, Inc. Nanoparticles having functional additives for self and directed assembly and methods of fabricating same
WO2008033303A2 (en) * 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
US7872318B2 (en) * 2006-09-29 2011-01-18 Hewlett-Packard Development Company, L.P. Sensing devices and methods for forming the same
US8018568B2 (en) * 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
CN102324462B (en) * 2006-10-12 2015-07-01 凯博瑞奥斯技术公司 Nanowire-based transparent conductors and applications thereof
WO2008127378A2 (en) * 2006-10-19 2008-10-23 The Regents Of The University Of California Hybrid solar cells with 3-dimensional hyperbranched nanocrystals
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
EP2109900A1 (en) * 2007-01-08 2009-10-21 Plextronics, Inc. Quantum dot photovoltaic device
WO2008118861A2 (en) * 2007-03-23 2008-10-02 The University Of North Carolina At Chapel Hill Discrete size and shape specific organic nanoparticles designed to elicit an immune response
EP2134643A4 (en) 2007-04-13 2013-08-21 Rice University Synthesis of uniform nanoparticle shapes with high selectivity
WO2008131304A1 (en) 2007-04-20 2008-10-30 Cambrios Technologies Corporation Composite transparent conductors and methods of forming the same
US8034317B2 (en) * 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
WO2009120625A2 (en) * 2008-03-24 2009-10-01 The Regents Of The University Of California Composite nanorods with distinct regions
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
CN105870345B (en) 2008-04-03 2019-01-01 三星研究美国股份有限公司 Luminescent device including quantum dot
US7960715B2 (en) * 2008-04-24 2011-06-14 University Of Iowa Research Foundation Semiconductor heterostructure nanowire devices
WO2009134367A1 (en) 2008-04-30 2009-11-05 Nanosys, Inc. Non-fouling surfaces for reflective spheres
DE102008029782A1 (en) * 2008-06-25 2012-03-01 Siemens Aktiengesellschaft Photodetector and method of manufacture
US8449673B2 (en) * 2008-08-22 2013-05-28 Babak NIKOOBAKHT Method and apparatus for producing nanocrystals
US8840863B2 (en) * 2008-09-04 2014-09-23 The Hong Kong University Of Science And Technology Method for synthesising a nano-product
CN101431148B (en) * 2008-10-13 2010-06-02 同济大学 Method for improving illumination intensity of CdTe nano compound film
US8540889B1 (en) 2008-11-19 2013-09-24 Nanosys, Inc. Methods of generating liquidphobic surfaces
KR101014861B1 (en) * 2008-12-12 2011-02-15 포항공과대학교 산학협력단 Quantum dot dendrimers and synthetic method thereof
GB2467162A (en) 2009-01-26 2010-07-28 Sharp Kk Fabrication of nitride nanoparticles
GB2467161A (en) 2009-01-26 2010-07-28 Sharp Kk Nitride nanoparticles
KR20110111369A (en) * 2009-02-04 2011-10-11 헬리오볼트 코오퍼레이션 Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films
US8618411B2 (en) * 2009-04-08 2013-12-31 David M. Schwartz Method of making photovoltaic cell
WO2010126606A2 (en) 2009-05-01 2010-11-04 Nanosys, Inc. Functionalized matrixes for dispersion of nanostructures
US8809672B2 (en) * 2009-05-27 2014-08-19 The Regents Of The University Of California Nanoneedle plasmonic photodetectors and solar cells
AU2010202792B2 (en) * 2009-06-05 2012-10-04 Heliovolt Corporation Process for synthesizing a thin film or composition layer via non-contact pressure containment
US20120088072A1 (en) * 2009-06-12 2012-04-12 Pawloski Adam R Microfabricated Particles in Composite Materials and Methods for Producing the Same
WO2011022338A1 (en) 2009-08-16 2011-02-24 Massachusetts Institute Of Technology Copolymer-associated nanomaterial
US8256621B2 (en) * 2009-09-11 2012-09-04 Pro-Pak Industries, Inc. Load tray and method for unitizing a palletized load
US9011818B2 (en) * 2009-11-30 2015-04-21 Massachusetts Institute Of Technology Materials and methods for biological imaging
SG182303A1 (en) 2009-12-31 2012-08-30 Ventana Med Syst Inc Methods for producing uniquely specific nucleic acid probes
US8021641B2 (en) * 2010-02-04 2011-09-20 Alliance For Sustainable Energy, Llc Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
SG183138A1 (en) * 2010-02-05 2012-09-27 Cambrios Technologies Corp Photosensitive ink compositions and transparent conductors and method of using the same
DK2539355T3 (en) 2010-02-26 2017-01-02 Ventana Med Syst Inc IN-SITU hybridization with polytag probes
WO2011106495A1 (en) 2010-02-26 2011-09-01 Ventana Medical Systems, Inc. Cytogenic analysis of metaphase chromosomes
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
CN101969102B (en) * 2010-08-09 2012-05-23 吉林大学 Method for preparing all-water phase nanocrystal/conductive polymer hybrid solar cells
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US8871175B2 (en) 2010-10-01 2014-10-28 The Boeing Company Nanomaterial having tunable infrared absorption characteristics and associated method of manufacture
FR2969137B1 (en) * 2010-12-17 2015-01-02 Centre Nat Rech Scient PROCESS FOR PREPARING A COMPOSITION OF MIXED PARTICLES CONTAINING ELEMENTS OF COLUMNS 13 AND 15
AU2012228424B2 (en) 2011-03-14 2015-05-07 Ventana Medical Systems, Inc. A method of analyzing chromosomal translocations and a system therefore
AU2012251027B2 (en) 2011-05-04 2015-03-26 Htg Molecular Diagnostics, Inc. Quantitative nuclease protection Assay (qNPA) and sequencing (qNPS) improvements
WO2012158832A2 (en) 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
GB2494659A (en) 2011-09-14 2013-03-20 Sharp Kk Nitride nanoparticles with high quantum yield and narrow luminescence spectrum.
WO2013057586A1 (en) 2011-10-19 2013-04-25 Oslo Universitetssykehus Hf Compositions and methods for producing soluble t - cell receptors
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
WO2013078242A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods for coating semiconductor nanocrystals
WO2013078245A1 (en) * 2011-11-22 2013-05-30 Qd Vision, Inc. Method of making quantum dots
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
WO2013115898A2 (en) 2012-02-05 2013-08-08 Qd Vision, Inc. Semiconductor nanocrystals, methods for making same, compositions, and products
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
CN103998656B (en) * 2011-12-07 2017-05-24 华东理工大学 Methods of producing cadmium selenide multi-pod nanocrystals
WO2013108126A2 (en) 2012-01-16 2013-07-25 University Of Oslo Methyltransferases and uses thereof
WO2013167387A1 (en) 2012-05-10 2013-11-14 Ventana Medical Systems, Inc. Uniquely specific probes for pten, pik3ca, met, top2a, and mdm2
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (en) 2012-07-02 2017-08-21 奈米系統股份有限公司 Highly luminescent nanostructures and methods of producing same
ES2648176T3 (en) 2012-07-12 2017-12-28 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting survival time and response to treatment of a patient suffering from solid cancer with a hallmark of at least 7 genes
JP6036833B2 (en) * 2012-09-18 2016-11-30 富士通株式会社 Solar cell and manufacturing method thereof
WO2014048942A1 (en) 2012-09-25 2014-04-03 Ventana Medical Systems, Inc. Probes for pten, pik3ca, met, and top2a, and method for using the probes
GB2507814A (en) 2012-11-13 2014-05-14 Sharp Kk A method of synthesising nitride nanocrystals using organometallics
US10372396B2 (en) * 2013-02-21 2019-08-06 Lenovo ( Singapore) Pte. Ltd. Discovery and connection to wireless displays
JP6250785B2 (en) 2013-03-14 2017-12-20 ナノシス・インク． Solvent-free quantum dot exchange method
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
KR101478448B1 (en) * 2013-07-01 2015-01-02 서울대학교산학협력단 Method of manufacturing absorber layer containing semiconductor nanoparticles and method of manufacturing semiconductor device containing the same absorber layer
KR20150018243A (en) * 2013-08-09 2015-02-23 한국전자통신연구원 Method Of Fabricating Metal Oxide Crystal And Method Of Fabricating Substrate For Solar Cell
WO2015036405A1 (en) 2013-09-10 2015-03-19 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for diagnosing and treating basal cell carcinoma
EP3066218B1 (en) 2013-11-05 2018-12-26 HTG Molecular Diagnostics, Inc. Methods for detecting nucleic acids
EP3617322A1 (en) 2014-02-24 2020-03-04 Ventana Medical Systems, Inc. Automated rna detection using labeled 2 -o-methyl rna oligonucleotide probes and signal amplification systems
EP3009147A1 (en) 2014-10-16 2016-04-20 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for treating resistant glioblastoma
EP3247803A1 (en) 2015-01-12 2017-11-29 INSERM - Institut National de la Santé et de la Recherche Médicale Methods for the diagnosis of pancreatic cancer
US10160906B2 (en) 2015-02-24 2018-12-25 Fondazione Istituto Italiano Di Tecnologia Masked cation exchange lithography
US10087504B2 (en) * 2015-08-13 2018-10-02 Samsung Electronics Co., Ltd. Semiconductor nanocrystals and method of preparation
WO2017029391A1 (en) 2015-08-20 2017-02-23 INSERM (Institut National de la Santé et de la Recherche Médicale) New method for treating cancer
EP3653686A1 (en) 2015-09-10 2020-05-20 Merck Patent GmbH Light converting material
KR102514116B1 (en) 2015-09-24 2023-03-23 삼성전자주식회사 Semiconductor nanocrystal particles and devices including the same
WO2017055324A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of cells of monocytic origin in a tissue sample
WO2017055319A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of b cells in a tissue sample
WO2017055325A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of nk cells in a tissue sample
WO2017055326A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of myeloid dendritic cells in a tissue sample
WO2017055321A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of fibroblasts in a tissue sample
WO2017055322A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of neutrophils in a tissue sample
WO2017055320A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of cytotoxic lymphocytes in a tissue sample
WO2017055327A1 (en) 2015-09-29 2017-04-06 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of endothelial cells in a tissue sample
WO2017060397A1 (en) 2015-10-09 2017-04-13 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting the survival time of subjects suffering from melanoma metastases
WO2017067944A1 (en) 2015-10-19 2017-04-27 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting the survival time of subjects suffering from triple negative breast cancer
IL290309B2 (en) 2015-11-06 2024-04-01 Ventana Med Syst Inc Representative diagnostics
ES2761266T3 (en) 2015-11-10 2020-05-19 Inst Nat Sante Rech Med Methods for predicting the survival time of patients with decompensated alcoholic cirrhosis
WO2017083483A1 (en) 2015-11-13 2017-05-18 Nanosys, Inc. Use of heteroleptic indium hydroxides as precursors for inp nanocrystals
WO2017122039A1 (en) 2016-01-13 2017-07-20 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting pancreatic cancer treatment response
WO2017182834A1 (en) 2016-04-19 2017-10-26 INSERM (Institut National de la Santé et de la Recherche Médicale) New method for treating resistant glioblastoma
US20190292259A1 (en) 2016-05-24 2019-09-26 Inserm (Institut National De La Sante Et De La Recherche Medicale) Methods and pharmaceutical compositions for the treatment of non small cell lung cancer (nsclc) that coexists with chronic obstructive pulmonary disease (copd)
EP3469098A1 (en) 2016-06-14 2019-04-17 INSERM - Institut National de la Santé et de la Recherche Médicale Methods for predicting acute severe colitis treatment response
WO2018011107A1 (en) 2016-07-11 2018-01-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Use of er-alpha 46 in methods and kits for assessing the status of breast cancer
WO2018011166A2 (en) 2016-07-12 2018-01-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for quantifying the population of myeloid dendritic cells in a tissue sample
WO2018046736A1 (en) 2016-09-12 2018-03-15 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting the survival time of patients suffering from cancer
WO2018046738A1 (en) 2016-09-12 2018-03-15 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting the survival time of patients suffering from cancer
WO2018054960A1 (en) 2016-09-21 2018-03-29 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting and treating resistance to chemotherapy in npm-alk(+) alcl
EP3515453A1 (en) 2016-09-22 2019-07-31 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods and pharmaceutical compositions for reprograming immune environment in a subject in need thereof
WO2018122249A1 (en) 2016-12-28 2018-07-05 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting the survival time of patients suffering from a microsatellite stable colorectal cancer
WO2018122245A1 (en) 2016-12-28 2018-07-05 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods of predicting the survival time of patients suffering from cms3 colorectal cancer
KR20180077503A (en) * 2016-12-29 2018-07-09 엘지디스플레이 주식회사 Quantum rod, Quantum rod film and Quantum rod display device
WO2018146239A1 (en) 2017-02-10 2018-08-16 INSERM (Institut National de la Santé et de la Recherche Médicale) Biomarker for outcome in aml patients
WO2018162404A1 (en) 2017-03-06 2018-09-13 INSERM (Institut National de la Santé et de la Recherche Médicale) Biomarker for outcome in aml patients
CN107046066A (en) * 2017-03-09 2017-08-15 深圳大学 With suede structure monocrystalline silicon piece and preparation method thereof and silicon solar cell
WO2018172540A1 (en) 2017-03-24 2018-09-27 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to predict the progression of alzheimer's disease
US11230736B2 (en) 2017-03-29 2022-01-25 Inserm (Institut National De La Santé De La Recherche Médicale) Methods for assessing pregnancy outcome
WO2018189215A1 (en) 2017-04-12 2018-10-18 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for predicting the survival time of a patient suffering from hepatocellular carcinoma
WO2019038219A1 (en) 2017-08-21 2019-02-28 INSERM (Institut National de la Santé et de la Recherche Médicale) New prognostic method of pancreatic cancer
WO2019043138A1 (en) 2017-09-01 2019-03-07 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for predicting the outcome of a cancer
CN111656179B (en) 2017-11-13 2023-11-03 豪夫迈·罗氏有限公司 Device for sample analysis using epitope electrophoresis
JP7277477B2 (en) 2017-12-18 2023-05-19 リテック－フェアメーゲンスフェアヴァルトゥングスゲゼルシャフト ミット ベシュレンクテル ハフツング light conversion material
CN108470674B (en) * 2018-01-16 2020-07-14 长春理工大学 Preparation method for realizing pure-phase GaAs nanowire by utilizing stress regulation
EP3768800B1 (en) 2018-03-20 2022-04-20 LITEC-Vermögensverwaltungsgesellschaft mbH Mn-activated oxidohalides as conversion luminescent materials for led-based solid state light sources
WO2019207030A1 (en) 2018-04-26 2019-10-31 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for predicting a response with an immune checkpoint inhibitor in a patient suffering from a lung cancer
WO2019229489A1 (en) 2018-05-31 2019-12-05 INSERM (Institut National de la Santé et de la Recherche Médicale) Use of mir-146a-5p and mir-186 as biomarkers of osteoarthritis
TW202024305A (en) 2018-09-14 2020-07-01 德商馬克專利公司 Blue-emitting phosphor compounds
WO2020089428A1 (en) 2018-11-02 2020-05-07 INSERM (Institut National de la Santé et de la Recherche Médicale) New prognostic method of pancreatic cancer
WO2020089432A1 (en) 2018-11-02 2020-05-07 INSERM (Institut National de la Santé et de la Recherche Médicale) New prognostic method of pancreatic cancer
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US20220098674A1 (en) 2019-02-13 2022-03-31 Inserm (Institut National De La Santé Et Dr La Recherch Médicale) Methods and compositions for selecting a cancer treatment in a subject suffering from cancer
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WO2020229437A1 (en) 2019-05-14 2020-11-19 F. Hoffmann-La Roche Ag Devices and methods for sample analysis
WO2020229521A1 (en) 2019-05-14 2020-11-19 INSERM (Institut National de la Santé et de la Recherche Médicale) Methods for inhibiting or reducing bacterial biofilms on a surface
WO2021001539A1 (en) 2019-07-04 2021-01-07 INSERM (Institut National de la Santé et de la Recherche Médicale) New strategy to detect and treat eosinophilic fasciitis
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US20230086718A1 (en) 2020-03-20 2023-03-23 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for predicting the survival time of a patient suffering from a cancer
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EP4308934A1 (en) 2021-03-17 2024-01-24 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for diagnosing pancreatic cancer
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WO2023280790A1 (en) 2021-07-05 2023-01-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Gene signatures for predicting survival time in patients suffering from renal cell carcinoma
WO2023089159A1 (en) 2021-11-22 2023-05-25 INSERM (Institut National de la Santé et de la Recherche Médicale) New strategy targeting stroma/tumor cell crosstalk to treat a cancer
WO2023144303A1 (en) 2022-01-31 2023-08-03 INSERM (Institut National de la Santé et de la Recherche Médicale) Cd38 as a biomarker and biotarget in t-cell lymphomas
WO2023152133A1 (en) 2022-02-08 2023-08-17 INSERM (Institut National de la Santé et de la Recherche Médicale) Method for diagnosing colorectal cancer
WO2024061930A1 (en) 2022-09-22 2024-03-28 Institut National de la Santé et de la Recherche Médicale New method to treat and diagnose peripheral t-cell lymphoma (ptcl)

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426383A1 (en) * 1978-05-15 1979-12-14 Minnesota Mining & Mfg PROCESS FOR SUPPRESSION OF SPARK DISCHARGES FROM NEGATIVELY TRIBOELECTRIC CHARGED SURFACES AND SURFACES THUS OBTAINED
US4625071A (en) * 1984-11-05 1986-11-25 Chronar Corp. Particulate semiconductors and devices
US4642140A (en) 1985-04-30 1987-02-10 The United States Of America As Represented By The United States Department Of Energy Process for producing chalcogenide semiconductors
EP0525070B1 (en) * 1990-04-17 1995-12-20 Ecole Polytechnique Federale De Lausanne Photovoltaic cells
US5403814A (en) * 1991-03-25 1995-04-04 Ciba-Geigy Corporation Sulfonylureas
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
WO1993010564A1 (en) * 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
DE4207659A1 (en) * 1992-03-11 1993-09-16 Abb Patent Gmbh METHOD FOR PRODUCING A PHOTOELECTROCHEMICAL CELL AND A CLEARLY PRODUCED CELL
JPH05308146A (en) * 1992-05-01 1993-11-19 Ricoh Co Ltd Organic photovoltaic element
US5331183A (en) * 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
US5594263A (en) * 1993-03-26 1997-01-14 Uop Semiconductor device containing a semiconducting crystalline nanoporous material
US5504323A (en) * 1993-12-07 1996-04-02 The Regents Of The University Of California Dual function conducting polymer diodes
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
DE4416642B4 (en) 1994-05-11 2006-03-02 Kiekert Ag Door closure system on a motor vehicle with a plurality of motor vehicle doors, of which at least one is designed as a sliding door
US5523555A (en) * 1994-09-14 1996-06-04 Cambridge Display Technology Photodetector device having a semiconductive conjugated polymer
GB9423692D0 (en) * 1994-11-23 1995-01-11 Philips Electronics Uk Ltd A photoresponsive device
GB2296815B (en) * 1994-12-09 1999-03-17 Cambridge Display Tech Ltd Photoresponsive materials
AU5386296A (en) * 1995-04-05 1996-10-23 Uniax Corporation Smart polymer image processor
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US5847787A (en) * 1996-08-05 1998-12-08 Motorola, Inc. Low driving voltage polymer dispersed liquid crystal display device with conductive nanoparticles
EP0922792A4 (en) 1997-06-27 2000-08-16 Nippon Pillar Packing SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME
US6013871A (en) * 1997-07-02 2000-01-11 Curtin; Lawrence F. Method of preparing a photovoltaic device
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6261779B1 (en) * 1998-11-10 2001-07-17 Bio-Pixels Ltd. Nanocrystals having polynucleotide strands and their use to form dendrimers in a signal amplification system
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
AU6379100A (en) 1999-07-26 2001-02-13 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6440213B1 (en) * 1999-10-28 2002-08-27 The Regents Of The University Of California Process for making surfactant capped nanocrystals
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
AU2001249459A1 (en) * 2000-03-24 2001-10-08 The State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Scaffold-organized clusters and electronic devices made using such clusters
JP2001302399A (en) 2000-04-19 2001-10-31 Mitsubishi Chemicals Corp Method of producing semiconductor superfine particle
AU2003298998A1 (en) * 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
US7303628B2 (en) * 2004-03-23 2007-12-04 The Regents Of The University Of California Nanocrystals with linear and branched topology

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