CA2499208C - Controlling electromechanical behavior of structures within a microelectromechanical systems device - Google Patents
Controlling electromechanical behavior of structures within a microelectromechanical systems device Download PDFInfo
- Publication number
- CA2499208C CA2499208C CA2499208A CA2499208A CA2499208C CA 2499208 C CA2499208 C CA 2499208C CA 2499208 A CA2499208 A CA 2499208A CA 2499208 A CA2499208 A CA 2499208A CA 2499208 C CA2499208 C CA 2499208C
- Authority
- CA
- Canada
- Prior art keywords
- layer
- electrode
- air gap
- etch barrier
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052681 coesite Inorganic materials 0.000 claims description 29
- 229910052906 cristobalite Inorganic materials 0.000 claims description 29
- 229910052682 stishovite Inorganic materials 0.000 claims description 29
- 229910052905 tridymite Inorganic materials 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 5
- 229910052593 corundum Inorganic materials 0.000 claims 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 5
- 230000004044 response Effects 0.000 abstract description 33
- 230000003287 optical effect Effects 0.000 abstract description 16
- 230000004913 activation Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 19
- 239000010409 thin film Substances 0.000 description 13
- 239000012530 fluid Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
Abstract
In one embodiment, the invention provides a method for fabricating a microelectromechanical system device. The method comprises fabricating a first layer (14) comprising a film (14) having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer (14) by at least reducing charge build up thereon during activation of the microelectromechanical systems device.
Description
CONTROLLING ELECTROMECHANICAL BEHAVIOR OF
STRUCTURES WITHIN A MICROELECTROMECHAMCAL SYSTEMS
DEVICE
FIELD OF THE INVENTION
[0001] This invention relates to microelectromechanical systems devices. In particular it relates to thin film structures in microelctromechanical systems devices and to electromechanical and optical responses of such thin film structures.
BACKGROUND OF THE INVENTION
STRUCTURES WITHIN A MICROELECTROMECHAMCAL SYSTEMS
DEVICE
FIELD OF THE INVENTION
[0001] This invention relates to microelectromechanical systems devices. In particular it relates to thin film structures in microelctromechanical systems devices and to electromechanical and optical responses of such thin film structures.
BACKGROUND OF THE INVENTION
[0002] Today a wide variety of microelectromechanical systems (MEMS) devices may be fabricated using microfabrication techniques. Examples of these MEMS
devices include motors, pumps, valves, switches, sensors, pixels, etc.
devices include motors, pumps, valves, switches, sensors, pixels, etc.
[0003] Often these MEMS devices harness principles and phenomena from different domains such as the optical, electrical and mechanical domains. Such principles and phenomena, while seemingly difficult to harness in the macroscopic world, can become extremely useful in the microscopic world of MEMS devices, where such phenomena become magnified. For example, electrostatic forces which are generally considered to be too weak in the macroscopic world to be harnessed, are strong enough in the microscopic world of MEMS devices to activate these devices, often at high speeds and with low power consumption.
[0004] Materials used in MEMS devices are generally selected based on their inherent properties in the optical, electrical, and mechanical domains and the characteristic response to input, such as for example, a driving or actuation voltage.
[0005] One problem affecting the fabrication of MEMS devices is that in some cases, a material having a highly desirable response to input, for example an optical response to incident light, may also have an undesirable response to input, for example, an electromechanical response to an actuation or driving voltage. To overcome, or at least reduce, the undesirable response, new materials have to be found or developed often at great expense.
[0006] Another problem with the fabrication of MEMS devices is that sometimes, a material selected for its characteristic response may become damaged due to exposure to chemical agents used during a particular microfabrication process. This causes the material to demonstrate less of the characteristic response to the input.
SUMMARY OF THE INVENTION
[0006a] In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film or structured film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by manipulating charge buildup thereon during activation of the microelectromechanical systems device.
[0006b] According to one aspect of the present invention, there is provided an apparatus, comprising: a substrate; an electrode, wherein the electrode is located over the substrate; an additional layer, wherein the additional layer is located over the electrode, and wherein the additional layer comprises Si02 an etch barrier layer, wherein the etch barrier layer is located over the additional layer; an air gap, wherein the air gap is located adjacent the etch barrier layer; and a displaceable layer located on the opposite side of the air gap as the electrode, wherein the displaceable layer is reflective to incident light.
[0006c] According to another aspect of the present invention, there is provided a method of making a MEMS device, comprising: forming an electrode layer over a substrate;
forming an additional layer over the electrode layer, wherein the additional layer comprises Si02; forming an etch barrier layer over the additional layer; and exposing the etch barrier layer to a chemical etchant, wherein the etch barrier layer is resistant to the chemical etchant.
[0006d] According to still another aspect of the present invention, there is provided a microelectromechanical systems device comprising: a substrate; a displaceable layer; an electrode, wherein the electrode is located over the substrate; an air gap, wherein said air gap is located between the electrode and the displaceable layer; a charge-trapping layer formed =
over the electrode, wherein the charge-trapping layer comprises a material capable of trapping both positive and negative charge; and a transparent layer formed between the charge-trapping layer and the electrode.
[0006e] According to yet another aspect of the present invention, there is provided a method of making a MEMS device, comprising: forming an electrode layer over a substrate;
forming a transparent layer over the electrode layer; forming a charge-trapping layer over the transparent layer, wherein the charge-trapping layer comprises a material capable of trapping both positive and negative charge; and forming a displaceable layer, wherein the displaceable layer is separated from the charge-trapping layer by an air gap.
10006f] According to a further aspect of the present invention, there is provided a microelectromechanical systems device comprising: a substrate; an electrode, wherein the electrode is located on the substrate; an air gap; a layer including Si02, wherein the layer including Si02 is located between the electrode and the air gap; and at least one layer comprising A1203 on or adjacent the layer comprising Si02, wherein the layer comprising A1203 is located between the air gap and the layer comprising SiO2.
BRIEF DESCRIPTION OF THE DRAWINGS
SUMMARY OF THE INVENTION
[0006a] In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film or structured film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by manipulating charge buildup thereon during activation of the microelectromechanical systems device.
[0006b] According to one aspect of the present invention, there is provided an apparatus, comprising: a substrate; an electrode, wherein the electrode is located over the substrate; an additional layer, wherein the additional layer is located over the electrode, and wherein the additional layer comprises Si02 an etch barrier layer, wherein the etch barrier layer is located over the additional layer; an air gap, wherein the air gap is located adjacent the etch barrier layer; and a displaceable layer located on the opposite side of the air gap as the electrode, wherein the displaceable layer is reflective to incident light.
[0006c] According to another aspect of the present invention, there is provided a method of making a MEMS device, comprising: forming an electrode layer over a substrate;
forming an additional layer over the electrode layer, wherein the additional layer comprises Si02; forming an etch barrier layer over the additional layer; and exposing the etch barrier layer to a chemical etchant, wherein the etch barrier layer is resistant to the chemical etchant.
[0006d] According to still another aspect of the present invention, there is provided a microelectromechanical systems device comprising: a substrate; a displaceable layer; an electrode, wherein the electrode is located over the substrate; an air gap, wherein said air gap is located between the electrode and the displaceable layer; a charge-trapping layer formed =
over the electrode, wherein the charge-trapping layer comprises a material capable of trapping both positive and negative charge; and a transparent layer formed between the charge-trapping layer and the electrode.
[0006e] According to yet another aspect of the present invention, there is provided a method of making a MEMS device, comprising: forming an electrode layer over a substrate;
forming a transparent layer over the electrode layer; forming a charge-trapping layer over the transparent layer, wherein the charge-trapping layer comprises a material capable of trapping both positive and negative charge; and forming a displaceable layer, wherein the displaceable layer is separated from the charge-trapping layer by an air gap.
10006f] According to a further aspect of the present invention, there is provided a microelectromechanical systems device comprising: a substrate; an electrode, wherein the electrode is located on the substrate; an air gap; a layer including Si02, wherein the layer including Si02 is located between the electrode and the air gap; and at least one layer comprising A1203 on or adjacent the layer comprising Si02, wherein the layer comprising A1203 is located between the air gap and the layer comprising SiO2.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figures 1 and 2 show a block diagram of a MEMS device in an unactuated, and an actuated state respectively;
[00081 Figure 3 shows a chart of the actuation and release voltages for the MEMS
device of Figures 1 and 2;
[0009] Figure 4 shows one embodiment of a thin film stack for a MEMS
device, in accordance with one embodiment of the invention;
[0010] Figure 5 shows a hysteresis curve for a MEMS device including the thin film stack shown in Figure 4 of the drawings;
2a [0011] Figure 6 shows another embodiment of a thin film stack for a MEMS device;
[0012] Figure 7 shows a hysteresis curve for a MEMS device including the thin film stack of Figure 6 of the drawings;
[0013] Figure 8a shows a block diagram of an electrostatic fluid flow system within a MEMS device in accordance with one embodiment of the invention;
2b [0014] Figure 8b shows a schematic drawing of the fluid flow system of Figure 8a illustrating its principle of operation; and [0015] Figure 9 shows another embodiment of a MEMS device in accordance with the invention.
DETAILED DESCRIPTION
[0016] A particular structure or layer within a microelectromechanical systems (MEMS) device may be desirable for its optical response to input in the form of incident light, but may at the same time have an undesirable electromechanical response to input in the form of an actuation or driving voltage. The present invention discloses techniques to manipulate or control the electromechanical response of the structure or layer, thus at least reducing the undesirable electomechanical response.
[0017] As an illustrative, but a non-limiting example of a MEMS device, consider the interference modulator (IMOD]) device 10 shown in Figure 1 of the drawings.
Referring to Figure 1, it will be seen that IMOD device 10 has been greatly simplified for illustrative purposes so as not to obscure aspects of the present invention.
[0018] The IMOD device 10 includes a transparent layer 12 and a reflective layer 14 which is spaced from the transparent layer 12 by an air gap 16. The transparent layer 14 is supported on posts 18 and is electrostatically displaceable towards the transparent layer 12 thereby to close the air gap 16. An electrode 20 which is connected to a driving mechanism 22 is used to cause the electrostatic displacement of reflective layer 14.
Figure 1 shows the reflective layer 14 in an unclriven or undisplaced condition, whereas Figure 2 shows the reflective layer 14 in a driven or displaced condition. The reflective layer 14 is generally selected to produce a desired optical response to incident light when it is brought into contact with the transparent layer 12. In one IMOD design, the transparent layer 12 may comprise Si02. The electrode 20 and the transparent layer 12 are formed on a substrate 24. The substrate 24, the electrode 20, and the transparent layer 12 thereon will be referred to as a "thin film stack."
[0019] Typically, a plurality of IMOD devices 10 are fabricated in a large array so as to form pixels within a reflective display. Within such a reflective display, each IMOD
device 10 essentially defines a pixel which has a characteristic optical response when in the undriven state, and a characteristic optical response when in the driven state. The transparent layer 12 and the size of the air gap 16 may be selected so that an IMOD
within the reflective display may reflect red, blue, or green light when in the undriven state and may absorb light when in the driven state.
[0020] It will be appreciated that during operation of the reflective display, the IMOD devices 10 are rapidly energized, and de-energized in order to convey information. When energized, the reflective layer 14 of an IMOD 10 device is electrostatically driven towards the transparent layer 12, and when the IMOD
10 is de-energized, the reflective layer 14 is allowed to return to its undriven state.
In order to keep the reflective layer 14 in its driven condition, a bias voltage is applied to each IMOD device 10.
[0021] If an actuation voltage, Vactuation, defined as a voltage required to electrostatically drive the reflective layer 14 of an IMOD device to its driven condition, as showed in Figure 2 of the drawings, is equal to a release voltage, V
release, defined as the voltage at which the reflective layer 14 returns to its undisplaced condition, as is shown in Figure 1 of the drawings, then it becomes extremely difficult to select an appropriate bias voltage, V bias, that can be applied to all of the IMOD '5 10 within the reflective display to keep the reflective layers 14 of each respective IMOD
device 10 within the reflective display in its driven condition. The reason for this is that each IMOD 10 within the reflective display may have slight variations, for example, variations in a thickness of the layers 12, 14, etc., which, in practice, result in a different release voltage, V release, for each IMOD 10. Further, due to line resistance, there will be variations in the actual voltage applied to each IMOD 10, based on its position within the display. This makes it very difficult, if not impossible, to select a value for V bias that will keep the reflective layer 14 of each respective lIVIOD 10 within the reflective display in its driven condition. This is explained with reference to Figure 3 of the drawings, which shows the observed hysteresis behavior of the reflective layer 14 of an IMOD 10, in which the transparent layer 12 comprised SiO2.
[0022] Referring to Figure 3, a curve, 30 is shown, which plots applied voltage (in volts) on the X-axis, against optical response measured in the volts on the Y-axis for an IMOD 10 comprising a transparent layer of Si02. As can be seen, actuation of the reflective layer 14 occurs at about 12.5 volts, i.e., Vacation equals 12.5 volts, and the reflective layer 14 returns to its undriven condition when the applied voltage falls to below 12.5 volts, i.e., V release, equals 12.5 volts. Thus, the reflective layer 14 in an IMOD device 10 in which the transparent layer comprises only Si02 demonstrates no hysteresis. Therefore, if the reflective display is fabricated using MOD
devices 10, each comprising a transparent layer 12 having only Si02, it would be impossible to select a value for V bias. For example, if V bias is selected to be 12.5 volts, because of variations within the MOD devices 10 in the reflective display, for at least some of the MOD
devices 10, a V bias of 12.5 volts would fail to keep the reflective layer 14 of those IMOD
devices 10 in the driven condition.
[0023] In order to select a V bias that is sufficient to keep the reflective layer 14 of a respective IMOD device 10 within a reflective display in its driven condition, it is necessary for each reflective layer 14 of a respective IMOD device 10 within the reflective display to demonstrate some degree of hysteresis, defined as a non-zero difference between the Vacation and V release =
[0024] It will be appreciated that the electromechanical response of the reflective layer 14 of each IMOD device 10 is determined by the electromechanical properties of the reflective layer 14 as well as the electrical properties of the transparent layer 12. In one particular IMOD device design, the transparent layer 12 comprises Si02 which gives a desired optical response when the reflective layer 14 is brought into contact therewith.
However, the transparent layer 12 comprising Si02 has a certain electrical characteristic or property (the Si02 traps negative charge) that affects the hysteresis behavior of the reflective layer 14. Thus, the transparent layer 12 has a desired optical response but an undesirable electromechanical response to a driving or actuation voltage which affects the hysteresis behavior of the reflective layer 14.
[0025] In accordance with embodiments of the present invention, the electromechanical behavior of the transparent layer 12 is altered by adding a further layer to the thin film stack. This further layer at least minimizes or compensates for the effect of transparent layer 12 on the hysteresis behavior of the reflective layer 14.
[0026] In one embodiment of the invention, the further layer comprises which is deposited, in accordance with known deposition techniques, over the transparent layer 12. This results in a thin film stack 40 as shown in Figure 4 of the drawings, comprising a substrate 42, an electrode 44, an Si02 reflective layer 46 and an A1203 layer 48 which functions as a charge trapping layer.
[0027] Figure 5 of the drawings shows a hysteresis curve 50 for an IMOD
device comprising the thin film stack 40. As with the hysteresis curve 30, the X-axis plots applied voltage inVolts, whereas the Y-axis plots optical response in Volts.
The hysteresis curve 50 shows a hysteresis window of 2.8 volts defined as the difference between Vactuation (7.8 volts) and Vrelease (5.0 volts). When the individual 'MOD's 10 within a reflective display each have a respective reflective layer 14 which demonstrates hysteresis in accordance with the hysteresis curve 50, it will be seen that it is possible to choose a value for the Vbias between 5 volts and 7.8 volts which will effectively perform the function of keeping the reflective layer 14 of each respective IMOD device 10 within the reflective display in its driven condition. In a further embodiment of the invention, the thin film stack may be further modified to include an A1203 layer above, as well as below, the reflective layer 12. This embodiment is shown in Figure 6 of the drawings, where it will be seen that the thin film stack 60 includes a substrate 62, an electrode 64, a first A1203 layer 66, an Si02 transparent layer 68 and a second A1203 layer 70.
[0028] Figure 7 of the drawings shows a hysteresis curve 80 for a transparent layer 14 of an IMOD device 10 having the thin film stack 60 shown in Figure 6 of the drawings. As will be seen, the hysteresis window is now wider, i.e., 4.5 volts, being the difference between Vactuation (9 volts) and Vrelease (4.5 volts).
[0029] However, other materials that have a high charge trapping density may be used. These materials include Al0x, which is the off-stoichiometric version of A1203, silicon nitride (Si3N4), its off-stoichiometric version (SiN.), and tantalum pentoxide (Th205) and its off-stoichiometric version (Ta0 x). All of these materials have several orders of magnitude higher charge trapping densities than Si02 and tend to trap charge of either polarity. Because these materials have a high charge trapping density, it is relatively easy to get charge into and out of these materials, as compared to Si02, which has a low charge trapping density and has an affinity for trapping negative charge only.
[0030] Other examples of materials that have a high charge trapping density include the rare earth metal oxides (e.g., hafnium oxide), and polymeric materials.
Further, =
semiconductor materials doped to trap either negative or positive charge may be used to form the further layer above, and optionally below the Si02 transparent layer 12.
[0031] Thus far, a technique for manipulating the electromechanical behavior of a MEMS device has been described, wherein charge buildup within the MEMS device is controlled by the use of a charge trapping layer which has a high charge trapping density.
However, it is to be understood that the invention covers the use of any charge trapping layer to alter or control the electromechanical behavior of a MEMS device regardless of the charge trapping density thereof. Naturally, the choice of a charge trapping layer whether it be of a high, low, or medium charge trapping density will be dictated by what electromechanical behavior for a MEMS device is being sought.
[0032] In some embodiments the incorporation of metals, in the form of thin layers or aggregates, provide yet another mechanism for manipulating the charge trapping density of a host film in a MEMS device. Structuring the host film by producing voids or creating a variation or periodicity in its material characteristics may also be used to alter the charge trapping characteristics..
[0033] According to another embodiment of the invention, an IMOD device includes a chemical barrier layer deposited over the reflective layer 12 in order to protect the reflective layer 12 from damage or degradation due to exposure to chemical etchants in the microfabrication process. For example, in one embodiment, the transparent layer 12 which comprises Si02, is protected by an overlying layer comprising A1203, which acts as a chemical barrier to etchants, for example, XeF2. In such embodiments, it has been found that when the transparent Si02 layer 12 is protected from the etchants, nonuniformities in the Si02 are eliminated along with attendant nonuniformities in electromechanical behavior, thus causing the transparent layer 14 within each IMOD
device 10 to display hysteresis.
[0034] Figures 8a and 8b show another application within a MEMS device wherein a charged trapping layer is used to control the electromagnetic behavior of a structure within the MEMS device.
[0035] Referring to Figure 8a, reference numeral 90 generally indicates a portion of an electrostatic fluid flow system. The electrostatic fluid flow system includes a substrate 92 within which is formed a generally U-shaped channel 94. The channel 94 includes an inner layer 96 of a first material which is selected, for example, because of its chemical and mechanical properties, for example, the material may be particularly wear-resistant, and may demonstrate little degradation due to the flow a fluid within the channel. The channel 94 also includes an outer layer 98 which is selected for its charge-trapping properties, as will be explained in greater detail below.
[0036] The electrostatic fluid flow system 90 also includes pairs of electrodes 100 and 102 which are selectively energized to cause displacement of charge particles within a fluid in the channel 94 in the direction indicated by the arrow 104 in Figure 8b of the drawings. In one embodiment, the outer layer 98 traps charge in the fluid thereby to provide greater control of fluid flow within the system 101. In another embodiment, the layer 98 may trap charge in order to eliminate or to reduce hysteresis effects.
[0037] Referring now to Figure 9 of the drawings, another application of using a charge-trapping layer to alter the electromechanical behavior of a structure within a MEMS device is shown. In Figure 9, reference numeral 120 generally indicates a motor comprising a rotor 122 which is axially aligned and spaced from a stator of 124. As can be seen, the stator 124 is formed on a substrate 126 and includes electrodes 128, which, in use, are energized by a driving mechanism (not shown). The rotor 122 includes a cylindrical portion 130 which is fast with a spindle 132. The rotor 122 may be of a material that may be selected for its mechanical properties, including resistance to wear, but may have undesirable electrical properties in response to input, such as when the electrodes 128 are energized in order to cause rotation of the rotor 122. In order to compensate for these undesirable electrical properties, layers 134 and 136 are deposited on the rotor 122 in order to effectively act as a charge trapping layer to alter the electromechanical behavior of the rotor 122.
[00081 Figure 3 shows a chart of the actuation and release voltages for the MEMS
device of Figures 1 and 2;
[0009] Figure 4 shows one embodiment of a thin film stack for a MEMS
device, in accordance with one embodiment of the invention;
[0010] Figure 5 shows a hysteresis curve for a MEMS device including the thin film stack shown in Figure 4 of the drawings;
2a [0011] Figure 6 shows another embodiment of a thin film stack for a MEMS device;
[0012] Figure 7 shows a hysteresis curve for a MEMS device including the thin film stack of Figure 6 of the drawings;
[0013] Figure 8a shows a block diagram of an electrostatic fluid flow system within a MEMS device in accordance with one embodiment of the invention;
2b [0014] Figure 8b shows a schematic drawing of the fluid flow system of Figure 8a illustrating its principle of operation; and [0015] Figure 9 shows another embodiment of a MEMS device in accordance with the invention.
DETAILED DESCRIPTION
[0016] A particular structure or layer within a microelectromechanical systems (MEMS) device may be desirable for its optical response to input in the form of incident light, but may at the same time have an undesirable electromechanical response to input in the form of an actuation or driving voltage. The present invention discloses techniques to manipulate or control the electromechanical response of the structure or layer, thus at least reducing the undesirable electomechanical response.
[0017] As an illustrative, but a non-limiting example of a MEMS device, consider the interference modulator (IMOD]) device 10 shown in Figure 1 of the drawings.
Referring to Figure 1, it will be seen that IMOD device 10 has been greatly simplified for illustrative purposes so as not to obscure aspects of the present invention.
[0018] The IMOD device 10 includes a transparent layer 12 and a reflective layer 14 which is spaced from the transparent layer 12 by an air gap 16. The transparent layer 14 is supported on posts 18 and is electrostatically displaceable towards the transparent layer 12 thereby to close the air gap 16. An electrode 20 which is connected to a driving mechanism 22 is used to cause the electrostatic displacement of reflective layer 14.
Figure 1 shows the reflective layer 14 in an unclriven or undisplaced condition, whereas Figure 2 shows the reflective layer 14 in a driven or displaced condition. The reflective layer 14 is generally selected to produce a desired optical response to incident light when it is brought into contact with the transparent layer 12. In one IMOD design, the transparent layer 12 may comprise Si02. The electrode 20 and the transparent layer 12 are formed on a substrate 24. The substrate 24, the electrode 20, and the transparent layer 12 thereon will be referred to as a "thin film stack."
[0019] Typically, a plurality of IMOD devices 10 are fabricated in a large array so as to form pixels within a reflective display. Within such a reflective display, each IMOD
device 10 essentially defines a pixel which has a characteristic optical response when in the undriven state, and a characteristic optical response when in the driven state. The transparent layer 12 and the size of the air gap 16 may be selected so that an IMOD
within the reflective display may reflect red, blue, or green light when in the undriven state and may absorb light when in the driven state.
[0020] It will be appreciated that during operation of the reflective display, the IMOD devices 10 are rapidly energized, and de-energized in order to convey information. When energized, the reflective layer 14 of an IMOD 10 device is electrostatically driven towards the transparent layer 12, and when the IMOD
10 is de-energized, the reflective layer 14 is allowed to return to its undriven state.
In order to keep the reflective layer 14 in its driven condition, a bias voltage is applied to each IMOD device 10.
[0021] If an actuation voltage, Vactuation, defined as a voltage required to electrostatically drive the reflective layer 14 of an IMOD device to its driven condition, as showed in Figure 2 of the drawings, is equal to a release voltage, V
release, defined as the voltage at which the reflective layer 14 returns to its undisplaced condition, as is shown in Figure 1 of the drawings, then it becomes extremely difficult to select an appropriate bias voltage, V bias, that can be applied to all of the IMOD '5 10 within the reflective display to keep the reflective layers 14 of each respective IMOD
device 10 within the reflective display in its driven condition. The reason for this is that each IMOD 10 within the reflective display may have slight variations, for example, variations in a thickness of the layers 12, 14, etc., which, in practice, result in a different release voltage, V release, for each IMOD 10. Further, due to line resistance, there will be variations in the actual voltage applied to each IMOD 10, based on its position within the display. This makes it very difficult, if not impossible, to select a value for V bias that will keep the reflective layer 14 of each respective lIVIOD 10 within the reflective display in its driven condition. This is explained with reference to Figure 3 of the drawings, which shows the observed hysteresis behavior of the reflective layer 14 of an IMOD 10, in which the transparent layer 12 comprised SiO2.
[0022] Referring to Figure 3, a curve, 30 is shown, which plots applied voltage (in volts) on the X-axis, against optical response measured in the volts on the Y-axis for an IMOD 10 comprising a transparent layer of Si02. As can be seen, actuation of the reflective layer 14 occurs at about 12.5 volts, i.e., Vacation equals 12.5 volts, and the reflective layer 14 returns to its undriven condition when the applied voltage falls to below 12.5 volts, i.e., V release, equals 12.5 volts. Thus, the reflective layer 14 in an IMOD device 10 in which the transparent layer comprises only Si02 demonstrates no hysteresis. Therefore, if the reflective display is fabricated using MOD
devices 10, each comprising a transparent layer 12 having only Si02, it would be impossible to select a value for V bias. For example, if V bias is selected to be 12.5 volts, because of variations within the MOD devices 10 in the reflective display, for at least some of the MOD
devices 10, a V bias of 12.5 volts would fail to keep the reflective layer 14 of those IMOD
devices 10 in the driven condition.
[0023] In order to select a V bias that is sufficient to keep the reflective layer 14 of a respective IMOD device 10 within a reflective display in its driven condition, it is necessary for each reflective layer 14 of a respective IMOD device 10 within the reflective display to demonstrate some degree of hysteresis, defined as a non-zero difference between the Vacation and V release =
[0024] It will be appreciated that the electromechanical response of the reflective layer 14 of each IMOD device 10 is determined by the electromechanical properties of the reflective layer 14 as well as the electrical properties of the transparent layer 12. In one particular IMOD device design, the transparent layer 12 comprises Si02 which gives a desired optical response when the reflective layer 14 is brought into contact therewith.
However, the transparent layer 12 comprising Si02 has a certain electrical characteristic or property (the Si02 traps negative charge) that affects the hysteresis behavior of the reflective layer 14. Thus, the transparent layer 12 has a desired optical response but an undesirable electromechanical response to a driving or actuation voltage which affects the hysteresis behavior of the reflective layer 14.
[0025] In accordance with embodiments of the present invention, the electromechanical behavior of the transparent layer 12 is altered by adding a further layer to the thin film stack. This further layer at least minimizes or compensates for the effect of transparent layer 12 on the hysteresis behavior of the reflective layer 14.
[0026] In one embodiment of the invention, the further layer comprises which is deposited, in accordance with known deposition techniques, over the transparent layer 12. This results in a thin film stack 40 as shown in Figure 4 of the drawings, comprising a substrate 42, an electrode 44, an Si02 reflective layer 46 and an A1203 layer 48 which functions as a charge trapping layer.
[0027] Figure 5 of the drawings shows a hysteresis curve 50 for an IMOD
device comprising the thin film stack 40. As with the hysteresis curve 30, the X-axis plots applied voltage inVolts, whereas the Y-axis plots optical response in Volts.
The hysteresis curve 50 shows a hysteresis window of 2.8 volts defined as the difference between Vactuation (7.8 volts) and Vrelease (5.0 volts). When the individual 'MOD's 10 within a reflective display each have a respective reflective layer 14 which demonstrates hysteresis in accordance with the hysteresis curve 50, it will be seen that it is possible to choose a value for the Vbias between 5 volts and 7.8 volts which will effectively perform the function of keeping the reflective layer 14 of each respective IMOD device 10 within the reflective display in its driven condition. In a further embodiment of the invention, the thin film stack may be further modified to include an A1203 layer above, as well as below, the reflective layer 12. This embodiment is shown in Figure 6 of the drawings, where it will be seen that the thin film stack 60 includes a substrate 62, an electrode 64, a first A1203 layer 66, an Si02 transparent layer 68 and a second A1203 layer 70.
[0028] Figure 7 of the drawings shows a hysteresis curve 80 for a transparent layer 14 of an IMOD device 10 having the thin film stack 60 shown in Figure 6 of the drawings. As will be seen, the hysteresis window is now wider, i.e., 4.5 volts, being the difference between Vactuation (9 volts) and Vrelease (4.5 volts).
[0029] However, other materials that have a high charge trapping density may be used. These materials include Al0x, which is the off-stoichiometric version of A1203, silicon nitride (Si3N4), its off-stoichiometric version (SiN.), and tantalum pentoxide (Th205) and its off-stoichiometric version (Ta0 x). All of these materials have several orders of magnitude higher charge trapping densities than Si02 and tend to trap charge of either polarity. Because these materials have a high charge trapping density, it is relatively easy to get charge into and out of these materials, as compared to Si02, which has a low charge trapping density and has an affinity for trapping negative charge only.
[0030] Other examples of materials that have a high charge trapping density include the rare earth metal oxides (e.g., hafnium oxide), and polymeric materials.
Further, =
semiconductor materials doped to trap either negative or positive charge may be used to form the further layer above, and optionally below the Si02 transparent layer 12.
[0031] Thus far, a technique for manipulating the electromechanical behavior of a MEMS device has been described, wherein charge buildup within the MEMS device is controlled by the use of a charge trapping layer which has a high charge trapping density.
However, it is to be understood that the invention covers the use of any charge trapping layer to alter or control the electromechanical behavior of a MEMS device regardless of the charge trapping density thereof. Naturally, the choice of a charge trapping layer whether it be of a high, low, or medium charge trapping density will be dictated by what electromechanical behavior for a MEMS device is being sought.
[0032] In some embodiments the incorporation of metals, in the form of thin layers or aggregates, provide yet another mechanism for manipulating the charge trapping density of a host film in a MEMS device. Structuring the host film by producing voids or creating a variation or periodicity in its material characteristics may also be used to alter the charge trapping characteristics..
[0033] According to another embodiment of the invention, an IMOD device includes a chemical barrier layer deposited over the reflective layer 12 in order to protect the reflective layer 12 from damage or degradation due to exposure to chemical etchants in the microfabrication process. For example, in one embodiment, the transparent layer 12 which comprises Si02, is protected by an overlying layer comprising A1203, which acts as a chemical barrier to etchants, for example, XeF2. In such embodiments, it has been found that when the transparent Si02 layer 12 is protected from the etchants, nonuniformities in the Si02 are eliminated along with attendant nonuniformities in electromechanical behavior, thus causing the transparent layer 14 within each IMOD
device 10 to display hysteresis.
[0034] Figures 8a and 8b show another application within a MEMS device wherein a charged trapping layer is used to control the electromagnetic behavior of a structure within the MEMS device.
[0035] Referring to Figure 8a, reference numeral 90 generally indicates a portion of an electrostatic fluid flow system. The electrostatic fluid flow system includes a substrate 92 within which is formed a generally U-shaped channel 94. The channel 94 includes an inner layer 96 of a first material which is selected, for example, because of its chemical and mechanical properties, for example, the material may be particularly wear-resistant, and may demonstrate little degradation due to the flow a fluid within the channel. The channel 94 also includes an outer layer 98 which is selected for its charge-trapping properties, as will be explained in greater detail below.
[0036] The electrostatic fluid flow system 90 also includes pairs of electrodes 100 and 102 which are selectively energized to cause displacement of charge particles within a fluid in the channel 94 in the direction indicated by the arrow 104 in Figure 8b of the drawings. In one embodiment, the outer layer 98 traps charge in the fluid thereby to provide greater control of fluid flow within the system 101. In another embodiment, the layer 98 may trap charge in order to eliminate or to reduce hysteresis effects.
[0037] Referring now to Figure 9 of the drawings, another application of using a charge-trapping layer to alter the electromechanical behavior of a structure within a MEMS device is shown. In Figure 9, reference numeral 120 generally indicates a motor comprising a rotor 122 which is axially aligned and spaced from a stator of 124. As can be seen, the stator 124 is formed on a substrate 126 and includes electrodes 128, which, in use, are energized by a driving mechanism (not shown). The rotor 122 includes a cylindrical portion 130 which is fast with a spindle 132. The rotor 122 may be of a material that may be selected for its mechanical properties, including resistance to wear, but may have undesirable electrical properties in response to input, such as when the electrodes 128 are energized in order to cause rotation of the rotor 122. In order to compensate for these undesirable electrical properties, layers 134 and 136 are deposited on the rotor 122 in order to effectively act as a charge trapping layer to alter the electromechanical behavior of the rotor 122.
10038] Although the present invention has been described with reference to specific exemplary embodiments, it will be evident that the various modification and changes can be made to these embodiments without departing from the broader spirit of the invention as set forth in the claims. Accordingly, the specification and drawings are to be regarded in an illustrative sense rather than in a restrictive sense.
Claims (15)
1. An apparatus, comprising:
a substrate;
an electrode, wherein the electrode is located over the substrate;
an additional layer, wherein the additional layer is located over the electrode, and wherein the additional layer comprises SiO2 an etch barrier layer, wherein the etch barrier layer is located over the additional layer;
an air gap, wherein the air gap is located adjacent the etch barrier layer;
and a displaceable layer located on the opposite side of the air gap as the electrode, wherein the displaceable layer is reflective to incident light.
a substrate;
an electrode, wherein the electrode is located over the substrate;
an additional layer, wherein the additional layer is located over the electrode, and wherein the additional layer comprises SiO2 an etch barrier layer, wherein the etch barrier layer is located over the additional layer;
an air gap, wherein the air gap is located adjacent the etch barrier layer;
and a displaceable layer located on the opposite side of the air gap as the electrode, wherein the displaceable layer is reflective to incident light.
2. The apparatus of claim 1, wherein the etch barrier layer is resistant to XeF2.
3. The apparatus of claim 1, wherein the etch barrier layer comprises Al2O3.
4. The apparatus of claim 1, wherein the additional layer is transparent.
5. The apparatus of claim 1, wherein the apparatus is an interferometric modulator.
6. A method of making a MEMS device, comprising:
forming an electrode layer over a substrate;
forming an additional layer over the electrode layer, wherein the additional layer comprises SiO2;
forming an etch barrier layer over the additional layer; and exposing the etch barrier layer to a chemical etchant, wherein the etch barrier layer is resistant to the chemical etchant.
forming an electrode layer over a substrate;
forming an additional layer over the electrode layer, wherein the additional layer comprises SiO2;
forming an etch barrier layer over the additional layer; and exposing the etch barrier layer to a chemical etchant, wherein the etch barrier layer is resistant to the chemical etchant.
7. The method of claim 6, wherein the additional layer is transparent.
8. The method of claim 6, wherein the etch barrier layer comprises Al2O3.
9. The method of claim 6, wherein the chemical etchant comprises XeF2.
10. The method of claim 6, additionally comprising forming a displaceable layer, wherein the displaceable layer is separated from the etch barrier layer by an air gap.
11. The method of claim 6, wherein the MEMS device is an interferometric modulator.
12. A microelectromechanical systems device comprising:
a substrate;
an electrode, wherein the electrode is located on the substrate;
an air gap;
a layer including SiO2, wherein the layer including SiO2 is located between the electrode and the air gap; and at least one layer comprising Al2O3 on or adjacent the layer comprising SiO2, wherein the layer comprising Al2O3 is located between the air gap and the layer comprising SiO2.
a substrate;
an electrode, wherein the electrode is located on the substrate;
an air gap;
a layer including SiO2, wherein the layer including SiO2 is located between the electrode and the air gap; and at least one layer comprising Al2O3 on or adjacent the layer comprising SiO2, wherein the layer comprising Al2O3 is located between the air gap and the layer comprising SiO2.
13. The device of claim 12, further comprising an electrostatically displacable layer located on the opposite side of the air gap from the electrode.
14. The apparatus of claim 12, additionally comprising a layer comprising Al2O3 located between the layer comprising SiO2 and the electrode.
15. The device of claim 12, wherein the device is an interferometric modulator.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/251,196 US7550794B2 (en) | 2002-09-20 | 2002-09-20 | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US10/251,196 | 2002-09-20 | ||
PCT/US2003/030016 WO2004026757A2 (en) | 2002-09-20 | 2003-09-18 | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2499208A1 CA2499208A1 (en) | 2004-04-01 |
CA2499208C true CA2499208C (en) | 2013-07-30 |
Family
ID=31992676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2499208A Expired - Fee Related CA2499208C (en) | 2002-09-20 | 2003-09-18 | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
Country Status (14)
Country | Link |
---|---|
US (2) | US7550794B2 (en) |
EP (1) | EP1540738B1 (en) |
JP (1) | JP4800619B2 (en) |
KR (2) | KR101060544B1 (en) |
CN (1) | CN1723571B (en) |
AU (1) | AU2003275194A1 (en) |
BR (1) | BR0314604A (en) |
CA (1) | CA2499208C (en) |
ES (1) | ES2523980T3 (en) |
HK (1) | HK1085305A1 (en) |
MX (1) | MXPA05003078A (en) |
RU (1) | RU2348088C2 (en) |
TW (1) | TWI289538B (en) |
WO (1) | WO2004026757A2 (en) |
Families Citing this family (254)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7123216B1 (en) * | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US6680792B2 (en) * | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US8014059B2 (en) * | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
US7471444B2 (en) * | 1996-12-19 | 2008-12-30 | Idc, Llc | Interferometric modulation of radiation |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
KR100703140B1 (en) * | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | Interferometric modulation and its manufacturing method |
US8023724B2 (en) * | 1999-07-22 | 2011-09-20 | Photon-X, Inc. | Apparatus and method of information extraction from electromagnetic energy based upon multi-characteristic spatial geometry processing |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
EP1573894B1 (en) * | 2002-12-10 | 2011-07-13 | Epcos Ag | Driving of an array of micro-electro-mechanical-system (mems) elements |
TW200413810A (en) * | 2003-01-29 | 2004-08-01 | Prime View Int Co Ltd | Light interference display panel and its manufacturing method |
US7417782B2 (en) | 2005-02-23 | 2008-08-26 | Pixtronix, Incorporated | Methods and apparatus for spatial light modulation |
TW594360B (en) * | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
EP2444368A3 (en) * | 2003-10-31 | 2012-07-25 | Epcos AG | A method of manufacturing an electronic device and electronic device |
US8081371B2 (en) * | 2003-11-01 | 2011-12-20 | Silicon Quest Kabushiki-Kaisha | Spatial light modulator and display apparatus |
US7142346B2 (en) * | 2003-12-09 | 2006-11-28 | Idc, Llc | System and method for addressing a MEMS display |
US7161728B2 (en) * | 2003-12-09 | 2007-01-09 | Idc, Llc | Area array modulation and lead reduction in interferometric modulators |
US7532194B2 (en) * | 2004-02-03 | 2009-05-12 | Idc, Llc | Driver voltage adjuster |
US7119945B2 (en) * | 2004-03-03 | 2006-10-10 | Idc, Llc | Altering temporal response of microelectromechanical elements |
US7706050B2 (en) * | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US7476327B2 (en) | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7060895B2 (en) * | 2004-05-04 | 2006-06-13 | Idc, Llc | Modifying the electro-mechanical behavior of devices |
US7164520B2 (en) * | 2004-05-12 | 2007-01-16 | Idc, Llc | Packaging for an interferometric modulator |
US7256922B2 (en) * | 2004-07-02 | 2007-08-14 | Idc, Llc | Interferometric modulators with thin film transistors |
TWI233916B (en) * | 2004-07-09 | 2005-06-11 | Prime View Int Co Ltd | A structure of a micro electro mechanical system |
CA2575314A1 (en) | 2004-07-29 | 2006-02-09 | Idc, Llc | System and method for micro-electromechanical operating of an interferometric modulator |
US7499208B2 (en) * | 2004-08-27 | 2009-03-03 | Udc, Llc | Current mode display driver circuit realization feature |
US7560299B2 (en) * | 2004-08-27 | 2009-07-14 | Idc, Llc | Systems and methods of actuating MEMS display elements |
US7515147B2 (en) * | 2004-08-27 | 2009-04-07 | Idc, Llc | Staggered column drive circuit systems and methods |
US7551159B2 (en) * | 2004-08-27 | 2009-06-23 | Idc, Llc | System and method of sensing actuation and release voltages of an interferometric modulator |
US7889163B2 (en) * | 2004-08-27 | 2011-02-15 | Qualcomm Mems Technologies, Inc. | Drive method for MEMS devices |
AU2005203198A1 (en) * | 2004-08-27 | 2006-03-16 | Idc, Llc | Staggered column drive circuit systems and methods |
US7602375B2 (en) * | 2004-09-27 | 2009-10-13 | Idc, Llc | Method and system for writing data to MEMS display elements |
US7321456B2 (en) * | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
US7527995B2 (en) * | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7893919B2 (en) | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
US20060076634A1 (en) | 2004-09-27 | 2006-04-13 | Lauren Palmateer | Method and system for packaging MEMS devices with incorporated getter |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7369294B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Ornamental display device |
US7130104B2 (en) * | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7843410B2 (en) | 2004-09-27 | 2010-11-30 | Qualcomm Mems Technologies, Inc. | Method and device for electrically programmable display |
US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US7343080B2 (en) * | 2004-09-27 | 2008-03-11 | Idc, Llc | System and method of testing humidity in a sealed MEMS device |
US7429334B2 (en) * | 2004-09-27 | 2008-09-30 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7554714B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Device and method for manipulation of thermal response in a modulator |
US7373026B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7724993B2 (en) | 2004-09-27 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | MEMS switches with deforming membranes |
US7808703B2 (en) * | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | System and method for implementation of interferometric modulator displays |
US7345805B2 (en) * | 2004-09-27 | 2008-03-18 | Idc, Llc | Interferometric modulator array with integrated MEMS electrical switches |
US7460246B2 (en) * | 2004-09-27 | 2008-12-02 | Idc, Llc | Method and system for sensing light using interferometric elements |
US7545550B2 (en) * | 2004-09-27 | 2009-06-09 | Idc, Llc | Systems and methods of actuating MEMS display elements |
US7684104B2 (en) * | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US7626581B2 (en) * | 2004-09-27 | 2009-12-01 | Idc, Llc | Device and method for display memory using manipulation of mechanical response |
US7289256B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Electrical characterization of interferometric modulators |
US7417735B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Systems and methods for measuring color and contrast in specular reflective devices |
US7692839B2 (en) * | 2004-09-27 | 2010-04-06 | Qualcomm Mems Technologies, Inc. | System and method of providing MEMS device with anti-stiction coating |
US7675669B2 (en) * | 2004-09-27 | 2010-03-09 | Qualcomm Mems Technologies, Inc. | Method and system for driving interferometric modulators |
US20060176487A1 (en) * | 2004-09-27 | 2006-08-10 | William Cummings | Process control monitors for interferometric modulators |
US7944599B2 (en) * | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7710629B2 (en) * | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | System and method for display device with reinforcing substance |
US7564612B2 (en) * | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7349136B2 (en) * | 2004-09-27 | 2008-03-25 | Idc, Llc | Method and device for a display having transparent components integrated therein |
US7653371B2 (en) * | 2004-09-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
US7368803B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | System and method for protecting microelectromechanical systems array using back-plate with non-flat portion |
US8124434B2 (en) * | 2004-09-27 | 2012-02-28 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a display |
US7317568B2 (en) * | 2004-09-27 | 2008-01-08 | Idc, Llc | System and method of implementation of interferometric modulators for display mirrors |
US7701631B2 (en) * | 2004-09-27 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Device having patterned spacers for backplates and method of making the same |
US7289259B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US20060066594A1 (en) * | 2004-09-27 | 2006-03-30 | Karen Tyger | Systems and methods for driving a bi-stable display element |
US7302157B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US20060066932A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of selective etching using etch stop layer |
US7612932B2 (en) * | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
US7369296B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US7936497B2 (en) * | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7372613B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US7415186B2 (en) * | 2004-09-27 | 2008-08-19 | Idc, Llc | Methods for visually inspecting interferometric modulators for defects |
US7304784B2 (en) * | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US7668415B2 (en) * | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
US7310179B2 (en) * | 2004-09-27 | 2007-12-18 | Idc, Llc | Method and device for selective adjustment of hysteresis window |
US7813026B2 (en) | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US7920135B2 (en) * | 2004-09-27 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | Method and system for driving a bi-stable display |
US20060065366A1 (en) * | 2004-09-27 | 2006-03-30 | Cummings William J | Portable etch chamber |
US7424198B2 (en) * | 2004-09-27 | 2008-09-09 | Idc, Llc | Method and device for packaging a substrate |
US20060077126A1 (en) * | 2004-09-27 | 2006-04-13 | Manish Kothari | Apparatus and method for arranging devices into an interconnected array |
US7679627B2 (en) | 2004-09-27 | 2010-03-16 | Qualcomm Mems Technologies, Inc. | Controller and driver features for bi-stable display |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7359066B2 (en) * | 2004-09-27 | 2008-04-15 | Idc, Llc | Electro-optical measurement of hysteresis in interferometric modulators |
US8878825B2 (en) * | 2004-09-27 | 2014-11-04 | Qualcomm Mems Technologies, Inc. | System and method for providing a variable refresh rate of an interferometric modulator display |
US7259449B2 (en) * | 2004-09-27 | 2007-08-21 | Idc, Llc | Method and system for sealing a substrate |
US7532195B2 (en) * | 2004-09-27 | 2009-05-12 | Idc, Llc | Method and system for reducing power consumption in a display |
US7586484B2 (en) * | 2004-09-27 | 2009-09-08 | Idc, Llc | Controller and driver features for bi-stable display |
US20060066596A1 (en) * | 2004-09-27 | 2006-03-30 | Sampsell Jeffrey B | System and method of transmitting video data |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
US7630119B2 (en) * | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7299681B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | Method and system for detecting leak in electronic devices |
US7355780B2 (en) | 2004-09-27 | 2008-04-08 | Idc, Llc | System and method of illuminating interferometric modulators using backlighting |
US7719500B2 (en) * | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
US20060067650A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US8310441B2 (en) | 2004-09-27 | 2012-11-13 | Qualcomm Mems Technologies, Inc. | Method and system for writing data to MEMS display elements |
US7916103B2 (en) | 2004-09-27 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | System and method for display device with end-of-life phenomena |
US7446927B2 (en) * | 2004-09-27 | 2008-11-04 | Idc, Llc | MEMS switch with set and latch electrodes |
US20060103643A1 (en) * | 2004-09-27 | 2006-05-18 | Mithran Mathew | Measuring and modeling power consumption in displays |
US7535466B2 (en) * | 2004-09-27 | 2009-05-19 | Idc, Llc | System with server based control of client device display features |
US7136213B2 (en) * | 2004-09-27 | 2006-11-14 | Idc, Llc | Interferometric modulators having charge persistence |
TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
US20070205969A1 (en) | 2005-02-23 | 2007-09-06 | Pixtronix, Incorporated | Direct-view MEMS display devices and methods for generating images thereon |
US7616368B2 (en) * | 2005-02-23 | 2009-11-10 | Pixtronix, Inc. | Light concentrating reflective display methods and apparatus |
US7304786B2 (en) * | 2005-02-23 | 2007-12-04 | Pixtronix, Inc. | Methods and apparatus for bi-stable actuation of displays |
US8310442B2 (en) | 2005-02-23 | 2012-11-13 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US7675665B2 (en) | 2005-02-23 | 2010-03-09 | Pixtronix, Incorporated | Methods and apparatus for actuating displays |
US9229222B2 (en) | 2005-02-23 | 2016-01-05 | Pixtronix, Inc. | Alignment methods in fluid-filled MEMS displays |
US7999994B2 (en) | 2005-02-23 | 2011-08-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US9158106B2 (en) | 2005-02-23 | 2015-10-13 | Pixtronix, Inc. | Display methods and apparatus |
US7755582B2 (en) * | 2005-02-23 | 2010-07-13 | Pixtronix, Incorporated | Display methods and apparatus |
US8159428B2 (en) * | 2005-02-23 | 2012-04-17 | Pixtronix, Inc. | Display methods and apparatus |
US8482496B2 (en) | 2006-01-06 | 2013-07-09 | Pixtronix, Inc. | Circuits for controlling MEMS display apparatus on a transparent substrate |
US9082353B2 (en) | 2010-01-05 | 2015-07-14 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US8519945B2 (en) | 2006-01-06 | 2013-08-27 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US7405852B2 (en) * | 2005-02-23 | 2008-07-29 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US7746529B2 (en) | 2005-02-23 | 2010-06-29 | Pixtronix, Inc. | MEMS display apparatus |
US7742016B2 (en) * | 2005-02-23 | 2010-06-22 | Pixtronix, Incorporated | Display methods and apparatus |
US9261694B2 (en) | 2005-02-23 | 2016-02-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
WO2006121784A1 (en) | 2005-05-05 | 2006-11-16 | Qualcomm Incorporated, Inc. | Dynamic driver ic and display panel configuration |
US7920136B2 (en) * | 2005-05-05 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | System and method of driving a MEMS display device |
US7948457B2 (en) * | 2005-05-05 | 2011-05-24 | Qualcomm Mems Technologies, Inc. | Systems and methods of actuating MEMS display elements |
US7884989B2 (en) | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
US20060277486A1 (en) * | 2005-06-02 | 2006-12-07 | Skinner David N | File or user interface element marking system |
US7460292B2 (en) * | 2005-06-03 | 2008-12-02 | Qualcomm Mems Technologies, Inc. | Interferometric modulator with internal polarization and drive method |
JP2009503565A (en) | 2005-07-22 | 2009-01-29 | クアルコム,インコーポレイテッド | Support structure for MEMS device and method thereof |
EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
US7355779B2 (en) * | 2005-09-02 | 2008-04-08 | Idc, Llc | Method and system for driving MEMS display elements |
US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
US8391630B2 (en) * | 2005-12-22 | 2013-03-05 | Qualcomm Mems Technologies, Inc. | System and method for power reduction when decompressing video streams for interferometric modulator displays |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7636151B2 (en) * | 2006-01-06 | 2009-12-22 | Qualcomm Mems Technologies, Inc. | System and method for providing residual stress test structures |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7382515B2 (en) * | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
US8194056B2 (en) * | 2006-02-09 | 2012-06-05 | Qualcomm Mems Technologies Inc. | Method and system for writing data to MEMS display elements |
US7582952B2 (en) * | 2006-02-21 | 2009-09-01 | Qualcomm Mems Technologies, Inc. | Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
US8526096B2 (en) | 2006-02-23 | 2013-09-03 | Pixtronix, Inc. | Mechanical light modulators with stressed beams |
US7450295B2 (en) | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
US7643203B2 (en) | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
US7903047B2 (en) * | 2006-04-17 | 2011-03-08 | Qualcomm Mems Technologies, Inc. | Mode indicator for interferometric modulator displays |
US7417784B2 (en) * | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7527996B2 (en) * | 2006-04-19 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US8049713B2 (en) * | 2006-04-24 | 2011-11-01 | Qualcomm Mems Technologies, Inc. | Power consumption optimized display update |
US7369292B2 (en) * | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7876489B2 (en) * | 2006-06-05 | 2011-01-25 | Pixtronix, Inc. | Display apparatus with optical cavities |
US7702192B2 (en) | 2006-06-21 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Systems and methods for driving MEMS display |
US7385744B2 (en) * | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7777715B2 (en) | 2006-06-29 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | Passive circuits for de-multiplexing display inputs |
US7388704B2 (en) * | 2006-06-30 | 2008-06-17 | Qualcomm Mems Technologies, Inc. | Determination of interferometric modulator mirror curvature and airgap variation using digital photographs |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
US20080043315A1 (en) * | 2006-08-15 | 2008-02-21 | Cummings William J | High profile contacts for microelectromechanical systems |
US7629197B2 (en) * | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
US7545552B2 (en) * | 2006-10-19 | 2009-06-09 | Qualcomm Mems Technologies, Inc. | Sacrificial spacer process and resultant structure for MEMS support structure |
EP2080045A1 (en) | 2006-10-20 | 2009-07-22 | Pixtronix Inc. | Light guides and backlight systems incorporating light redirectors at varying densities |
US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US7556981B2 (en) | 2006-12-29 | 2009-07-07 | Qualcomm Mems Technologies, Inc. | Switches for shorting during MEMS etch release |
US7852546B2 (en) | 2007-10-19 | 2010-12-14 | Pixtronix, Inc. | Spacers for maintaining display apparatus alignment |
US9176318B2 (en) | 2007-05-18 | 2015-11-03 | Pixtronix, Inc. | Methods for manufacturing fluid-filled MEMS displays |
US7957589B2 (en) | 2007-01-25 | 2011-06-07 | Qualcomm Mems Technologies, Inc. | Arbitrary power function using logarithm lookup table |
US8115987B2 (en) * | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
US7742220B2 (en) * | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
US7715085B2 (en) * | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7625825B2 (en) * | 2007-06-14 | 2009-12-01 | Qualcomm Mems Technologies, Inc. | Method of patterning mechanical layer for MEMS structures |
US7643199B2 (en) * | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
US7782517B2 (en) * | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
US7630121B2 (en) * | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US8068268B2 (en) * | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
EP2183623A1 (en) | 2007-07-31 | 2010-05-12 | Qualcomm Mems Technologies, Inc. | Devices for enhancing colour shift of interferometric modulators |
US7570415B2 (en) * | 2007-08-07 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US8072402B2 (en) * | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US7773286B2 (en) * | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
US7847999B2 (en) * | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
WO2009052324A2 (en) | 2007-10-19 | 2009-04-23 | Qualcomm Mems Technologies, Inc. | Display with integrated photovoltaic device |
US8058549B2 (en) * | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
KR20100103467A (en) * | 2007-10-23 | 2010-09-27 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Adjustably transmissive mems-based devices |
US7729036B2 (en) * | 2007-11-12 | 2010-06-01 | Qualcomm Mems Technologies, Inc. | Capacitive MEMS device with programmable offset voltage control |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US7715079B2 (en) * | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
CA2715283A1 (en) * | 2008-02-11 | 2009-08-20 | Qualcomm Mems Technologies, Inc. | Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same |
US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
US7944604B2 (en) * | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) * | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) * | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) * | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
US8248560B2 (en) | 2008-04-18 | 2012-08-21 | Pixtronix, Inc. | Light guides and backlight systems incorporating prismatic structures and light redirectors |
US8701422B2 (en) | 2008-06-03 | 2014-04-22 | Bsst Llc | Thermoelectric heat pump |
US7851239B2 (en) | 2008-06-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices |
US7768690B2 (en) | 2008-06-25 | 2010-08-03 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7746539B2 (en) * | 2008-06-25 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | Method for packing a display device and the device obtained thereof |
US8023167B2 (en) * | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7859740B2 (en) * | 2008-07-11 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control |
US7782522B2 (en) | 2008-07-17 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Encapsulation methods for interferometric modulator and MEMS devices |
US7855826B2 (en) | 2008-08-12 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices |
US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
US8169679B2 (en) | 2008-10-27 | 2012-05-01 | Pixtronix, Inc. | MEMS anchors |
US20110205259A1 (en) * | 2008-10-28 | 2011-08-25 | Pixtronix, Inc. | System and method for selecting display modes |
US8270056B2 (en) * | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
US8248358B2 (en) * | 2009-03-27 | 2012-08-21 | Qualcomm Mems Technologies, Inc. | Altering frame rates in a MEMS display by selective line skipping |
US8736590B2 (en) * | 2009-03-27 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Low voltage driver scheme for interferometric modulators |
US7864403B2 (en) | 2009-03-27 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Post-release adjustment of interferometric modulator reflectivity |
KR20120090771A (en) | 2009-05-29 | 2012-08-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Illumination devices and methods of fabrication thereof |
US8270062B2 (en) * | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) * | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
US8884940B2 (en) | 2010-01-06 | 2014-11-11 | Qualcomm Mems Technologies, Inc. | Charge pump for producing display driver output |
CN104916258B (en) | 2010-02-02 | 2018-02-16 | 追踪有限公司 | For controlling the circuit of display device |
KR20120132680A (en) | 2010-02-02 | 2012-12-07 | 픽스트로닉스 인코포레이티드 | Methods for manufacturing cold seal fluid-filled display apparatus |
US8659611B2 (en) | 2010-03-17 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | System and method for frame buffer storage and retrieval in alternating orientations |
KR20130100232A (en) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Mechanical layer of an electromechanical device and methods of forming the same |
EP2558776B1 (en) | 2010-04-16 | 2022-09-14 | Azumo, Inc. | Front illumination device comprising a film-based lightguide |
MX2012012033A (en) | 2010-04-16 | 2013-05-20 | Flex Lighting Ii Llc | Illumination device comprising a film-based lightguide. |
US8722445B2 (en) | 2010-06-25 | 2014-05-13 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
EP2606485A1 (en) | 2010-08-17 | 2013-06-26 | Qualcomm Mems Technologies, Inc. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US8294184B2 (en) | 2011-02-23 | 2012-10-23 | Qualcomm Mems Technologies, Inc. | EMS tunable transistor |
US8345030B2 (en) | 2011-03-18 | 2013-01-01 | Qualcomm Mems Technologies, Inc. | System and method for providing positive and negative voltages from a single inductor |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
JP5908975B2 (en) | 2011-06-06 | 2016-04-26 | ジェンサーム インコーポレイテッドGentherm Incorporated | Cartridge-based thermoelectric system |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US8716852B2 (en) * | 2012-02-17 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Micro-electro mechanical systems (MEMS) having outgasing prevention structures and methods of forming the same |
US9135843B2 (en) | 2012-05-31 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Charge pump for producing display driver output |
WO2014022428A2 (en) | 2012-08-01 | 2014-02-06 | Gentherm Incorporated | High efficiency thermoelectric generation |
TWI495612B (en) | 2013-01-04 | 2015-08-11 | Univ Nat Chiao Tung | One-dimension titanium metal nanostructure and the fabricating method thereof |
CN104956539B (en) | 2013-01-30 | 2018-06-12 | 詹思姆公司 | Heat management system based on thermoelectricity |
US9134552B2 (en) | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | Display apparatus with narrow gap electrostatic actuators |
JP6511368B2 (en) * | 2015-09-01 | 2019-05-15 | アズビル株式会社 | Micro mechanical device |
US11075331B2 (en) | 2018-07-30 | 2021-07-27 | Gentherm Incorporated | Thermoelectric device having circuitry with structural rigidity |
US11152557B2 (en) | 2019-02-20 | 2021-10-19 | Gentherm Incorporated | Thermoelectric module with integrated printed circuit board |
Family Cites Families (284)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2534846A (en) | 1946-06-20 | 1950-12-19 | Emi Ltd | Color filter |
DE1288651B (en) | 1963-06-28 | 1969-02-06 | Siemens Ag | Arrangement of electrical dipoles for wavelengths below 1 mm and method for producing such an arrangement |
US3616312A (en) | 1966-04-15 | 1971-10-26 | Ionics | Hydrazine manufacture |
FR1603131A (en) | 1968-07-05 | 1971-03-22 | ||
US3653741A (en) | 1970-02-16 | 1972-04-04 | Alvin M Marks | Electro-optical dipolar material |
US3813265A (en) | 1970-02-16 | 1974-05-28 | A Marks | Electro-optical dipolar material |
US3725868A (en) | 1970-10-19 | 1973-04-03 | Burroughs Corp | Small reconfigurable processor for a variety of data processing applications |
DE2336930A1 (en) | 1973-07-20 | 1975-02-06 | Battelle Institut E V | INFRARED MODULATOR (II.) |
US4099854A (en) | 1976-10-12 | 1978-07-11 | The Unites States Of America As Represented By The Secretary Of The Navy | Optical notch filter utilizing electric dipole resonance absorption |
US4196396A (en) | 1976-10-15 | 1980-04-01 | Bell Telephone Laboratories, Incorporated | Interferometer apparatus using electro-optic material with feedback |
US4389096A (en) | 1977-12-27 | 1983-06-21 | Matsushita Electric Industrial Co., Ltd. | Image display apparatus of liquid crystal valve projection type |
US4445050A (en) | 1981-12-15 | 1984-04-24 | Marks Alvin M | Device for conversion of light power to electric power |
US4663083A (en) | 1978-05-26 | 1987-05-05 | Marks Alvin M | Electro-optical dipole suspension with reflective-absorptive-transmissive characteristics |
US4190488A (en) * | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
US4228437A (en) | 1979-06-26 | 1980-10-14 | The United States Of America As Represented By The Secretary Of The Navy | Wideband polarization-transforming electromagnetic mirror |
NL8001281A (en) | 1980-03-04 | 1981-10-01 | Philips Nv | DISPLAY DEVICE. |
DE3012253A1 (en) | 1980-03-28 | 1981-10-15 | Hoechst Ag, 6000 Frankfurt | METHOD FOR VISIBLE MASKING OF CARGO IMAGES AND A DEVICE SUITABLE FOR THIS |
US4377324A (en) * | 1980-08-04 | 1983-03-22 | Honeywell Inc. | Graded index Fabry-Perot optical filter device |
US4441791A (en) | 1980-09-02 | 1984-04-10 | Texas Instruments Incorporated | Deformable mirror light modulator |
FR2506026A1 (en) | 1981-05-18 | 1982-11-19 | Radant Etudes | METHOD AND DEVICE FOR ANALYZING A HYPERFREQUENCY ELECTROMAGNETIC WAVE RADIATION BEAM |
NL8103377A (en) | 1981-07-16 | 1983-02-16 | Philips Nv | DISPLAY DEVICE. |
US4571603A (en) * | 1981-11-03 | 1986-02-18 | Texas Instruments Incorporated | Deformable mirror electrostatic printer |
NL8200354A (en) | 1982-02-01 | 1983-09-01 | Philips Nv | PASSIVE DISPLAY. |
US4500171A (en) * | 1982-06-02 | 1985-02-19 | Texas Instruments Incorporated | Process for plastic LCD fill hole sealing |
US4482213A (en) | 1982-11-23 | 1984-11-13 | Texas Instruments Incorporated | Perimeter seal reinforcement holes for plastic LCDs |
US4498953A (en) * | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
US4566935A (en) * | 1984-07-31 | 1986-01-28 | Texas Instruments Incorporated | Spatial light modulator and method |
US4710732A (en) | 1984-07-31 | 1987-12-01 | Texas Instruments Incorporated | Spatial light modulator and method |
US5061049A (en) | 1984-08-31 | 1991-10-29 | Texas Instruments Incorporated | Spatial light modulator and method |
US4662746A (en) | 1985-10-30 | 1987-05-05 | Texas Instruments Incorporated | Spatial light modulator and method |
US4596992A (en) | 1984-08-31 | 1986-06-24 | Texas Instruments Incorporated | Linear spatial light modulator and printer |
US5096279A (en) * | 1984-08-31 | 1992-03-17 | Texas Instruments Incorporated | Spatial light modulator and method |
US4560435A (en) | 1984-10-01 | 1985-12-24 | International Business Machines Corporation | Composite back-etch/lift-off stencil for proximity effect minimization |
US4615595A (en) | 1984-10-10 | 1986-10-07 | Texas Instruments Incorporated | Frame addressed spatial light modulator |
US4617608A (en) | 1984-12-28 | 1986-10-14 | At&T Bell Laboratories | Variable gap device and method of manufacture |
US5172262A (en) | 1985-10-30 | 1992-12-15 | Texas Instruments Incorporated | Spatial light modulator and method |
GB2186708B (en) | 1985-11-26 | 1990-07-11 | Sharp Kk | A variable interferometric device and a process for the production of the same |
US5835255A (en) * | 1986-04-23 | 1998-11-10 | Etalon, Inc. | Visible spectrum modulator arrays |
GB8610129D0 (en) | 1986-04-25 | 1986-05-29 | Secr Defence | Electro-optical device |
US4748366A (en) | 1986-09-02 | 1988-05-31 | Taylor George W | Novel uses of piezoelectric materials for creating optical effects |
US4786128A (en) | 1986-12-02 | 1988-11-22 | Quantum Diagnostics, Ltd. | Device for modulating and reflecting electromagnetic radiation employing electro-optic layer having a variable index of refraction |
JPS63194285A (en) * | 1987-02-06 | 1988-08-11 | シャープ株式会社 | Color display device |
NL8701138A (en) | 1987-05-13 | 1988-12-01 | Philips Nv | ELECTROSCOPIC IMAGE DISPLAY. |
DE3716485C1 (en) | 1987-05-16 | 1988-11-24 | Heraeus Gmbh W C | Xenon short-arc discharge lamp |
US4900136A (en) * | 1987-08-11 | 1990-02-13 | North American Philips Corporation | Method of metallizing silica-containing gel and solid state light modulator incorporating the metallized gel |
US4956619A (en) | 1988-02-19 | 1990-09-11 | Texas Instruments Incorporated | Spatial light modulator |
US4880493A (en) | 1988-06-16 | 1989-11-14 | The United States Of America As Represented By The United States Department Of Energy | Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication |
US4856863A (en) | 1988-06-22 | 1989-08-15 | Texas Instruments Incorporated | Optical fiber interconnection network including spatial light modulator |
US5028939A (en) | 1988-08-23 | 1991-07-02 | Texas Instruments Incorporated | Spatial light modulator system |
JP2700903B2 (en) * | 1988-09-30 | 1998-01-21 | シャープ株式会社 | Liquid crystal display |
US4982184A (en) * | 1989-01-03 | 1991-01-01 | General Electric Company | Electrocrystallochromic display and element |
US5214419A (en) | 1989-02-27 | 1993-05-25 | Texas Instruments Incorporated | Planarized true three dimensional display |
US5162787A (en) | 1989-02-27 | 1992-11-10 | Texas Instruments Incorporated | Apparatus and method for digitized video system utilizing a moving display surface |
US5079544A (en) * | 1989-02-27 | 1992-01-07 | Texas Instruments Incorporated | Standard independent digitized video system |
US5192946A (en) | 1989-02-27 | 1993-03-09 | Texas Instruments Incorporated | Digitized color video display system |
US5170156A (en) | 1989-02-27 | 1992-12-08 | Texas Instruments Incorporated | Multi-frequency two dimensional display system |
US5287096A (en) * | 1989-02-27 | 1994-02-15 | Texas Instruments Incorporated | Variable luminosity display system |
US5214420A (en) | 1989-02-27 | 1993-05-25 | Texas Instruments Incorporated | Spatial light modulator projection system with random polarity light |
US5272473A (en) | 1989-02-27 | 1993-12-21 | Texas Instruments Incorporated | Reduced-speckle display system |
US5206629A (en) | 1989-02-27 | 1993-04-27 | Texas Instruments Incorporated | Spatial light modulator and memory for digitized video display |
US5218472A (en) | 1989-03-22 | 1993-06-08 | Alcan International Limited | Optical interference structures incorporating porous films |
US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
US5022745A (en) | 1989-09-07 | 1991-06-11 | Massachusetts Institute Of Technology | Electrostatically deformable single crystal dielectrically coated mirror |
US4954789A (en) | 1989-09-28 | 1990-09-04 | Texas Instruments Incorporated | Spatial light modulator |
US5381253A (en) * | 1991-11-14 | 1995-01-10 | Board Of Regents Of University Of Colorado | Chiral smectic liquid crystal optical modulators having variable retardation |
US5124834A (en) | 1989-11-16 | 1992-06-23 | General Electric Company | Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same |
US5037173A (en) | 1989-11-22 | 1991-08-06 | Texas Instruments Incorporated | Optical interconnection network |
US5500635A (en) * | 1990-02-20 | 1996-03-19 | Mott; Jonathan C. | Products incorporating piezoelectric material |
US5279990A (en) * | 1990-03-02 | 1994-01-18 | Motorola, Inc. | Method of making a small geometry contact using sidewall spacers |
US5196946A (en) * | 1990-03-14 | 1993-03-23 | C-Cube Microsystems | System for compression and decompression of video data using discrete cosine transform and coding techniques |
CH682523A5 (en) * | 1990-04-20 | 1993-09-30 | Suisse Electronique Microtech | A modulation matrix addressed light. |
GB9012099D0 (en) | 1990-05-31 | 1990-07-18 | Kodak Ltd | Optical article for multicolour imaging |
US5142405A (en) | 1990-06-29 | 1992-08-25 | Texas Instruments Incorporated | Bistable dmd addressing circuit and method |
US5018256A (en) | 1990-06-29 | 1991-05-28 | Texas Instruments Incorporated | Architecture and process for integrating DMD with control circuit substrates |
US5083857A (en) * | 1990-06-29 | 1992-01-28 | Texas Instruments Incorporated | Multi-level deformable mirror device |
DE69113150T2 (en) * | 1990-06-29 | 1996-04-04 | Texas Instruments Inc | Deformable mirror device with updated grid. |
US5099353A (en) * | 1990-06-29 | 1992-03-24 | Texas Instruments Incorporated | Architecture and process for integrating DMD with control circuit substrates |
US5216537A (en) | 1990-06-29 | 1993-06-01 | Texas Instruments Incorporated | Architecture and process for integrating DMD with control circuit substrates |
US5153771A (en) | 1990-07-18 | 1992-10-06 | Northrop Corporation | Coherent light modulation and detector |
US5192395A (en) | 1990-10-12 | 1993-03-09 | Texas Instruments Incorporated | Method of making a digital flexure beam accelerometer |
US5044736A (en) | 1990-11-06 | 1991-09-03 | Motorola, Inc. | Configurable optical filter or display |
US5602671A (en) * | 1990-11-13 | 1997-02-11 | Texas Instruments Incorporated | Low surface energy passivation layer for micromechanical devices |
US5331454A (en) | 1990-11-13 | 1994-07-19 | Texas Instruments Incorporated | Low reset voltage process for DMD |
FR2669466B1 (en) | 1990-11-16 | 1997-11-07 | Michel Haond | METHOD FOR ENGRAVING INTEGRATED CIRCUIT LAYERS WITH FIXED DEPTH AND CORRESPONDING INTEGRATED CIRCUIT. |
US5233459A (en) | 1991-03-06 | 1993-08-03 | Massachusetts Institute Of Technology | Electric display device |
US5136669A (en) | 1991-03-15 | 1992-08-04 | Sperry Marine Inc. | Variable ratio fiber optic coupler optical signal processing element |
US5439763A (en) * | 1991-03-19 | 1995-08-08 | Hitachi, Ltd. | Optical mask and method of correcting the same |
US5358806A (en) | 1991-03-19 | 1994-10-25 | Hitachi, Ltd. | Phase shift mask, method of correcting the same and apparatus for carrying out the method |
JPH05165189A (en) * | 1991-12-12 | 1993-06-29 | Hitachi Ltd | Optical mask and method for correcting the mask |
JPH05241321A (en) * | 1992-02-28 | 1993-09-21 | Hitachi Ltd | Optical mask and method for correcting this mask |
CA2063744C (en) * | 1991-04-01 | 2002-10-08 | Paul M. Urbanus | Digital micromirror device architecture and timing for use in a pulse-width modulated display system |
US5142414A (en) | 1991-04-22 | 1992-08-25 | Koehler Dale R | Electrically actuatable temporal tristimulus-color device |
US5226099A (en) | 1991-04-26 | 1993-07-06 | Texas Instruments Incorporated | Digital micromirror shutter device |
FR2679057B1 (en) * | 1991-07-11 | 1995-10-20 | Morin Francois | LIQUID CRYSTAL, ACTIVE MATRIX AND HIGH DEFINITION SCREEN STRUCTURE. |
US5179274A (en) * | 1991-07-12 | 1993-01-12 | Texas Instruments Incorporated | Method for controlling operation of optical systems and devices |
US5168406A (en) | 1991-07-31 | 1992-12-01 | Texas Instruments Incorporated | Color deformable mirror device and method for manufacture |
US5254980A (en) | 1991-09-06 | 1993-10-19 | Texas Instruments Incorporated | DMD display system controller |
US5233385A (en) | 1991-12-18 | 1993-08-03 | Texas Instruments Incorporated | White light enhanced color field sequential projection |
US5233456A (en) | 1991-12-20 | 1993-08-03 | Texas Instruments Incorporated | Resonant mirror and method of manufacture |
US5228013A (en) | 1992-01-10 | 1993-07-13 | Bik Russell J | Clock-painting device and method for indicating the time-of-day with a non-traditional, now analog artistic panel of digital electronic visual displays |
US5296950A (en) * | 1992-01-31 | 1994-03-22 | Texas Instruments Incorporated | Optical signal free-space conversion board |
US5231532A (en) | 1992-02-05 | 1993-07-27 | Texas Instruments Incorporated | Switchable resonant filter for optical radiation |
US5212582A (en) | 1992-03-04 | 1993-05-18 | Texas Instruments Incorporated | Electrostatically controlled beam steering device and method |
DE69310974T2 (en) | 1992-03-25 | 1997-11-06 | Texas Instruments Inc | Built-in optical calibration system |
US5312513A (en) * | 1992-04-03 | 1994-05-17 | Texas Instruments Incorporated | Methods of forming multiple phase light modulators |
WO1993021663A1 (en) * | 1992-04-08 | 1993-10-28 | Georgia Tech Research Corporation | Process for lift-off of thin film materials from a growth substrate |
US5190637A (en) * | 1992-04-24 | 1993-03-02 | Wisconsin Alumni Research Foundation | Formation of microstructures by multiple level deep X-ray lithography with sacrificial metal layers |
US5311360A (en) | 1992-04-28 | 1994-05-10 | The Board Of Trustees Of The Leland Stanford, Junior University | Method and apparatus for modulating a light beam |
TW245772B (en) * | 1992-05-19 | 1995-04-21 | Akzo Nv | |
JPH0651250A (en) * | 1992-05-20 | 1994-02-25 | Texas Instr Inc <Ti> | Monolithic space optical modulator and memory package |
DE69332407T2 (en) * | 1992-06-17 | 2003-06-18 | Harris Corp | Manufacture of semiconductor devices on SOI substrates |
US5818095A (en) * | 1992-08-11 | 1998-10-06 | Texas Instruments Incorporated | High-yield spatial light modulator with light blocking layer |
US5345328A (en) * | 1992-08-12 | 1994-09-06 | Sandia Corporation | Tandem resonator reflectance modulator |
US5293272A (en) * | 1992-08-24 | 1994-03-08 | Physical Optics Corporation | High finesse holographic fabry-perot etalon and method of fabricating |
US5327286A (en) | 1992-08-31 | 1994-07-05 | Texas Instruments Incorporated | Real time optical correlation system |
US5325116A (en) | 1992-09-18 | 1994-06-28 | Texas Instruments Incorporated | Device for writing to and reading from optical storage media |
US5296775A (en) | 1992-09-24 | 1994-03-22 | International Business Machines Corporation | Cooling microfan arrangements and process |
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US5489952A (en) * | 1993-07-14 | 1996-02-06 | Texas Instruments Incorporated | Method and device for multi-format television |
US5497197A (en) * | 1993-11-04 | 1996-03-05 | Texas Instruments Incorporated | System and method for packaging data into video processor |
US5583688A (en) | 1993-12-21 | 1996-12-10 | Texas Instruments Incorporated | Multi-level digital micromirror device |
US5500761A (en) * | 1994-01-27 | 1996-03-19 | At&T Corp. | Micromechanical modulator |
JPH07253594A (en) * | 1994-03-15 | 1995-10-03 | Fujitsu Ltd | Display device |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US20010003487A1 (en) * | 1996-11-05 | 2001-06-14 | Mark W. Miles | Visible spectrum modulator arrays |
US6710908B2 (en) * | 1994-05-05 | 2004-03-23 | Iridigm Display Corporation | Controlling micro-electro-mechanical cavities |
US6680792B2 (en) * | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7460291B2 (en) * | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
US6040937A (en) * | 1994-05-05 | 2000-03-21 | Etalon, Inc. | Interferometric modulation |
US7123216B1 (en) * | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US5497172A (en) * | 1994-06-13 | 1996-03-05 | Texas Instruments Incorporated | Pulse width modulation for spatial light modulator with split reset addressing |
US5454906A (en) | 1994-06-21 | 1995-10-03 | Texas Instruments Inc. | Method of providing sacrificial spacer for micro-mechanical devices |
US5499062A (en) * | 1994-06-23 | 1996-03-12 | Texas Instruments Incorporated | Multiplexed memory timing with block reset and secondary memory |
US5636052A (en) | 1994-07-29 | 1997-06-03 | Lucent Technologies Inc. | Direct view display based on a micromechanical modulation |
US5656554A (en) * | 1994-07-29 | 1997-08-12 | International Business Machines Corporation | Semiconductor chip reclamation technique involving multiple planarization processes |
US5485304A (en) * | 1994-07-29 | 1996-01-16 | Texas Instruments, Inc. | Support posts for micro-mechanical devices |
WO1996008031A1 (en) | 1994-09-02 | 1996-03-14 | Dabbaj Rad H | Reflective light valve modulator |
US5650881A (en) * | 1994-11-02 | 1997-07-22 | Texas Instruments Incorporated | Support post architecture for micromechanical devices |
JPH08153700A (en) * | 1994-11-25 | 1996-06-11 | Semiconductor Energy Lab Co Ltd | Anisotropic etching of electrically conductive coating |
US5610624A (en) * | 1994-11-30 | 1997-03-11 | Texas Instruments Incorporated | Spatial light modulator with reduced possibility of an on state defect |
US5726480A (en) * | 1995-01-27 | 1998-03-10 | The Regents Of The University Of California | Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same |
US5610438A (en) * | 1995-03-08 | 1997-03-11 | Texas Instruments Incorporated | Micro-mechanical device with non-evaporable getter |
US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
JPH0933942A (en) * | 1995-07-21 | 1997-02-07 | Fuji Xerox Co Ltd | Spatial optical modulation element and its production |
US6324192B1 (en) * | 1995-09-29 | 2001-11-27 | Coretek, Inc. | Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same |
US5825528A (en) | 1995-12-26 | 1998-10-20 | Lucent Technologies Inc. | Phase-mismatched fabry-perot cavity micromechanical modulator |
US5771321A (en) * | 1996-01-04 | 1998-06-23 | Massachusetts Institute Of Technology | Micromechanical optical switch and flat panel display |
US5967163A (en) | 1996-01-30 | 1999-10-19 | Abbott Laboratories | Actuator and method |
US5751469A (en) | 1996-02-01 | 1998-05-12 | Lucent Technologies Inc. | Method and apparatus for an improved micromechanical modulator |
JPH1020328A (en) * | 1996-07-02 | 1998-01-23 | Fuji Xerox Co Ltd | Spatial light modulation element |
US5710656A (en) * | 1996-07-30 | 1998-01-20 | Lucent Technologies Inc. | Micromechanical optical modulator having a reduced-mass composite membrane |
US5884083A (en) * | 1996-09-20 | 1999-03-16 | Royce; Robert | Computer system to compile non-incremental computer source code to execute within an incremental type computer system |
DE19730715C1 (en) | 1996-11-12 | 1998-11-26 | Fraunhofer Ges Forschung | Method of manufacturing a micromechanical relay |
US5683649A (en) | 1996-11-14 | 1997-11-04 | Eastman Kodak Company | Method for the fabrication of micro-electromechanical ceramic parts |
EP1376684B1 (en) | 1997-01-21 | 2008-11-26 | Georgia Tech Research Corporation | Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections |
DE69806846T2 (en) * | 1997-05-08 | 2002-12-12 | Texas Instruments Inc | Improvements for spatial light modulators |
US5867302A (en) * | 1997-08-07 | 1999-02-02 | Sandia Corporation | Bistable microelectromechanical actuator |
US6031653A (en) * | 1997-08-28 | 2000-02-29 | California Institute Of Technology | Low-cost thin-metal-film interference filters |
JP2001522072A (en) * | 1997-10-31 | 2001-11-13 | テーウー エレクトロニクス カンパニー リミテッド | Manufacturing method of thin film type optical path adjusting device |
US6008123A (en) | 1997-11-04 | 1999-12-28 | Lucent Technologies Inc. | Method for using a hardmask to form an opening in a semiconductor substrate |
US6028690A (en) * | 1997-11-26 | 2000-02-22 | Texas Instruments Incorporated | Reduced micromirror mirror gaps for improved contrast ratio |
US6180428B1 (en) * | 1997-12-12 | 2001-01-30 | Xerox Corporation | Monolithic scanning light emitting devices using micromachining |
US6016693A (en) * | 1998-02-09 | 2000-01-25 | The Regents Of The University Of California | Microfabrication of cantilevers using sacrificial templates |
US6195196B1 (en) * | 1998-03-13 | 2001-02-27 | Fuji Photo Film Co., Ltd. | Array-type exposing device and flat type display incorporating light modulator and driving method thereof |
KR100703140B1 (en) * | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | Interferometric modulation and its manufacturing method |
US6689211B1 (en) * | 1999-04-09 | 2004-02-10 | Massachusetts Institute Of Technology | Etch stop layer system |
EP0951068A1 (en) | 1998-04-17 | 1999-10-20 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of fabrication of a microstructure having an inside cavity |
US6046659A (en) * | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
JP2000028938A (en) * | 1998-07-13 | 2000-01-28 | Fuji Photo Film Co Ltd | Array type optical modulation element, array type exposure element, and method for driving plane display device |
US6100477A (en) * | 1998-07-17 | 2000-08-08 | Texas Instruments Incorporated | Recessed etch RF micro-electro-mechanical switch |
KR100281182B1 (en) * | 1998-08-10 | 2001-04-02 | 윤종용 | Method for forming self-aligned contacts in semiconductor devices |
US6710539B2 (en) * | 1998-09-02 | 2004-03-23 | Micron Technology, Inc. | Field emission devices having structure for reduced emitter tip to gate spacing |
DE19938072A1 (en) | 1998-09-09 | 2000-03-16 | Siemens Ag | Self-aligned structure, especially for semiconductor, micro-optical or micromechanical devices, is produced using an existing substrate structure as mask for back face resist layer exposure |
JP4074714B2 (en) * | 1998-09-25 | 2008-04-09 | 富士フイルム株式会社 | Array type light modulation element and flat display driving method |
US6323834B1 (en) * | 1998-10-08 | 2001-11-27 | International Business Machines Corporation | Micromechanical displays and fabrication method |
US6391675B1 (en) * | 1998-11-25 | 2002-05-21 | Raytheon Company | Method and apparatus for switching high frequency signals |
JPH11258777A (en) * | 1998-12-10 | 1999-09-24 | Hitachi Ltd | Correcting method of defect in optical mask |
KR100301050B1 (en) | 1998-12-14 | 2002-06-20 | 윤종용 | Method of manufacturing capacitor of semiconductor device including contacts |
US6194323B1 (en) * | 1998-12-16 | 2001-02-27 | Lucent Technologies Inc. | Deep sub-micron metal etch with in-situ hard mask etch |
TW439308B (en) * | 1998-12-16 | 2001-06-07 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6335831B2 (en) * | 1998-12-18 | 2002-01-01 | Eastman Kodak Company | Multilevel mechanical grating device |
US6215221B1 (en) * | 1998-12-29 | 2001-04-10 | Honeywell International Inc. | Electrostatic/pneumatic actuators for active surfaces |
US6210988B1 (en) | 1999-01-15 | 2001-04-03 | The Regents Of The University Of California | Polycrystalline silicon germanium films for forming micro-electromechanical systems |
US6537427B1 (en) * | 1999-02-04 | 2003-03-25 | Micron Technology, Inc. | Deposition of smooth aluminum films |
JP4787412B2 (en) * | 1999-03-30 | 2011-10-05 | シチズンホールディングス株式会社 | Method for forming thin film substrate and thin film substrate formed by the method |
US6358854B1 (en) | 1999-04-21 | 2002-03-19 | Sandia Corporation | Method to fabricate layered material compositions |
US6446486B1 (en) * | 1999-04-26 | 2002-09-10 | Sandia Corporation | Micromachine friction test apparatus |
US6342452B1 (en) * | 1999-05-20 | 2002-01-29 | International Business Machines Corporation | Method of fabricating a Si3N4/polycide structure using a dielectric sacrificial layer as a mask |
JP3592136B2 (en) * | 1999-06-04 | 2004-11-24 | キヤノン株式会社 | Liquid discharge head, method of manufacturing the same, and method of manufacturing microelectromechanical device |
US6201633B1 (en) * | 1999-06-07 | 2001-03-13 | Xerox Corporation | Micro-electromechanical based bistable color display sheets |
US6359673B1 (en) * | 1999-06-21 | 2002-03-19 | Eastman Kodak Company | Sheet having a layer with different light modulating materials |
US6525310B2 (en) * | 1999-08-05 | 2003-02-25 | Microvision, Inc. | Frequency tunable resonant scanner |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US6351329B1 (en) * | 1999-10-08 | 2002-02-26 | Lucent Technologies Inc. | Optical attenuator |
US6960305B2 (en) * | 1999-10-26 | 2005-11-01 | Reflectivity, Inc | Methods for forming and releasing microelectromechanical structures |
US7041224B2 (en) * | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
US6674090B1 (en) * | 1999-12-27 | 2004-01-06 | Xerox Corporation | Structure and method for planar lateral oxidation in active |
US6407851B1 (en) * | 2000-08-01 | 2002-06-18 | Mohammed N. Islam | Micromechanical optical switch |
DE10006035A1 (en) | 2000-02-10 | 2001-08-16 | Bosch Gmbh Robert | Micro-mechanical component production, used as sensor element or actuator element, comprises providing functional element and/or functional layer with protective layer |
US6531945B1 (en) * | 2000-03-10 | 2003-03-11 | Micron Technology, Inc. | Integrated circuit inductor with a magnetic core |
JP2001272613A (en) * | 2000-03-24 | 2001-10-05 | Seiko Epson Corp | Optical switching element, optical switching device, their manufacturing methods, optical switching unit and video display device |
JP4002712B2 (en) * | 2000-05-15 | 2007-11-07 | スパンション エルエルシー | Nonvolatile semiconductor memory device and data holding method of nonvolatile semiconductor memory device |
US7008812B1 (en) * | 2000-05-30 | 2006-03-07 | Ic Mechanics, Inc. | Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
US6465320B1 (en) | 2000-06-16 | 2002-10-15 | Motorola, Inc. | Electronic component and method of manufacturing |
US6452465B1 (en) * | 2000-06-27 | 2002-09-17 | M-Squared Filters, Llc | High quality-factor tunable resonator |
WO2002001584A1 (en) | 2000-06-28 | 2002-01-03 | The Regents Of The University Of California | Capacitive microelectromechanical switches |
EP1802114B1 (en) * | 2000-07-03 | 2011-11-23 | Sony Corporation | Optical multilayer structure, optical switching device, and image display |
CA2352729A1 (en) * | 2000-07-13 | 2002-01-13 | Creoscitex Corporation Ltd. | Blazed micro-mechanical light modulator and array thereof |
US6853129B1 (en) * | 2000-07-28 | 2005-02-08 | Candescent Technologies Corporation | Protected substrate structure for a field emission display device |
WO2002012116A2 (en) * | 2000-08-03 | 2002-02-14 | Analog Devices, Inc. | Bonded wafer optical mems process |
US6392233B1 (en) * | 2000-08-10 | 2002-05-21 | Sarnoff Corporation | Optomechanical radiant energy detector |
TW471063B (en) * | 2000-08-11 | 2002-01-01 | Winbond Electronics Corp | Method to form opening in insulator layer using ion implantation |
US6635919B1 (en) * | 2000-08-17 | 2003-10-21 | Texas Instruments Incorporated | High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications |
US6376787B1 (en) * | 2000-08-24 | 2002-04-23 | Texas Instruments Incorporated | Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer |
MY128644A (en) * | 2000-08-31 | 2007-02-28 | Georgia Tech Res Inst | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same |
JP4304852B2 (en) * | 2000-09-04 | 2009-07-29 | コニカミノルタホールディングス株式会社 | Non-flat liquid crystal display element and method for manufacturing the same |
US6466354B1 (en) * | 2000-09-19 | 2002-10-15 | Silicon Light Machines | Method and apparatus for interferometric modulation of light |
US6522801B1 (en) * | 2000-10-10 | 2003-02-18 | Agere Systems Inc. | Micro-electro-optical mechanical device having an implanted dopant included therein and a method of manufacture therefor |
JP2002124534A (en) * | 2000-10-13 | 2002-04-26 | Tanaka Electronics Ind Co Ltd | Rectilinear propagation estimating equipment and method of metal thin wire |
GB2367788A (en) * | 2000-10-16 | 2002-04-17 | Seiko Epson Corp | Etching using an ink jet print head |
US6859218B1 (en) * | 2000-11-07 | 2005-02-22 | Hewlett-Packard Development Company, L.P. | Electronic display devices and methods |
DE10055421A1 (en) * | 2000-11-09 | 2002-05-29 | Bosch Gmbh Robert | Method for producing a micromechanical structure and micromechanical structure |
US6406975B1 (en) | 2000-11-27 | 2002-06-18 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap shallow trench isolation (STI) structure |
DE10063991B4 (en) * | 2000-12-21 | 2005-06-02 | Infineon Technologies Ag | Process for the production of micromechanical components |
US6620712B2 (en) * | 2001-02-14 | 2003-09-16 | Intpax, Inc. | Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications |
US6661561B2 (en) * | 2001-03-26 | 2003-12-09 | Creo Inc. | High frequency deformable mirror device |
CN1228818C (en) | 2001-04-02 | 2005-11-23 | 华邦电子股份有限公司 | Method for forming funnel-shaped dielectric layer window in semiconductor |
US6525396B2 (en) | 2001-04-17 | 2003-02-25 | Texas Instruments Incorporated | Selection of materials and dimensions for a micro-electromechanical switch for use in the RF regime |
US6756317B2 (en) * | 2001-04-23 | 2004-06-29 | Memx, Inc. | Method for making a microstructure by surface micromachining |
US6600587B2 (en) * | 2001-04-23 | 2003-07-29 | Memx, Inc. | Surface micromachined optical system with reinforced mirror microstructure |
US6657832B2 (en) * | 2001-04-26 | 2003-12-02 | Texas Instruments Incorporated | Mechanically assisted restoring force support for micromachined membranes |
US6602791B2 (en) * | 2001-04-27 | 2003-08-05 | Dalsa Semiconductor Inc. | Manufacture of integrated fluidic devices |
AU2002303842A1 (en) * | 2001-05-22 | 2002-12-03 | Reflectivity, Inc. | A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
DE10127622B4 (en) * | 2001-06-07 | 2009-10-22 | Qimonda Ag | Method of making an isolation trench filled with HDPCVD oxide |
US6958123B2 (en) * | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
US7005314B2 (en) * | 2001-06-27 | 2006-02-28 | Intel Corporation | Sacrificial layer technique to make gaps in MEMS applications |
US6905613B2 (en) * | 2001-07-10 | 2005-06-14 | Honeywell International Inc. | Use of an organic dielectric as a sacrificial layer |
JP4032216B2 (en) * | 2001-07-12 | 2008-01-16 | ソニー株式会社 | OPTICAL MULTILAYER STRUCTURE, ITS MANUFACTURING METHOD, OPTICAL SWITCHING DEVICE, AND IMAGE DISPLAY DEVICE |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US6936183B2 (en) * | 2001-10-17 | 2005-08-30 | Applied Materials, Inc. | Etch process for etching microstructures |
AUPR846701A0 (en) | 2001-10-25 | 2001-11-15 | Microtechnology Centre Management Limited | A method of fabrication of micro-devices |
US6635506B2 (en) | 2001-11-07 | 2003-10-21 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
US20030111439A1 (en) * | 2001-12-14 | 2003-06-19 | Fetter Linus Albert | Method of forming tapered electrodes for electronic devices |
US6782166B1 (en) * | 2001-12-21 | 2004-08-24 | United States Of America As Represented By The Secretary Of The Air Force | Optically transparent electrically conductive charge sheet poling electrodes to maximize performance of electro-optic devices |
US6608268B1 (en) * | 2002-02-05 | 2003-08-19 | Memtronics, A Division Of Cogent Solutions, Inc. | Proximity micro-electro-mechanical system |
US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US6574033B1 (en) * | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
US7145143B2 (en) | 2002-03-18 | 2006-12-05 | Honeywell International Inc. | Tunable sensor |
US7027200B2 (en) * | 2002-03-22 | 2006-04-11 | Reflectivity, Inc | Etching method used in fabrications of microstructures |
US7029829B2 (en) * | 2002-04-18 | 2006-04-18 | The Regents Of The University Of Michigan | Low temperature method for forming a microcavity on a substrate and article having same |
JP2003315732A (en) * | 2002-04-25 | 2003-11-06 | Fuji Photo Film Co Ltd | Image display device |
US6954297B2 (en) | 2002-04-30 | 2005-10-11 | Hewlett-Packard Development Company, L.P. | Micro-mirror device including dielectrophoretic liquid |
US20030202264A1 (en) | 2002-04-30 | 2003-10-30 | Weber Timothy L. | Micro-mirror device |
US6791441B2 (en) * | 2002-05-07 | 2004-09-14 | Raytheon Company | Micro-electro-mechanical switch, and methods of making and using it |
US6953702B2 (en) | 2002-05-16 | 2005-10-11 | Agilent Technologies, Inc. | Fixed wavelength vertical cavity optical devices and method of manufacture therefor |
US6806110B2 (en) | 2002-05-16 | 2004-10-19 | Agilent Technologies, Inc. | Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor |
US20040001258A1 (en) * | 2002-06-28 | 2004-01-01 | Mandeep Singh | Solid state etalons with low thermally-induced optical path length change |
US6741377B2 (en) * | 2002-07-02 | 2004-05-25 | Iridigm Display Corporation | Device having a light-absorbing mask and a method for fabricating same |
US7071289B2 (en) * | 2002-07-11 | 2006-07-04 | The University Of Connecticut | Polymers comprising thieno [3,4-b]thiophene and methods of making and using the same |
TW593124B (en) | 2002-08-02 | 2004-06-21 | Ind Tech Res Inst | Suspended microstructure for infrared imaging device and sensor, and manufacturing method thereof |
US20040058531A1 (en) * | 2002-08-08 | 2004-03-25 | United Microelectronics Corp. | Method for preventing metal extrusion in a semiconductor structure. |
US6674033B1 (en) * | 2002-08-21 | 2004-01-06 | Ming-Shan Wang | Press button type safety switch |
TW544787B (en) * | 2002-09-18 | 2003-08-01 | Promos Technologies Inc | Method of forming self-aligned contact structure with locally etched gate conductive layer |
US7781850B2 (en) * | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
TWI289708B (en) * | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
TW559686B (en) * | 2002-12-27 | 2003-11-01 | Prime View Int Co Ltd | Optical interference type panel and the manufacturing method thereof |
US20040157426A1 (en) | 2003-02-07 | 2004-08-12 | Luc Ouellet | Fabrication of advanced silicon-based MEMS devices |
US6720267B1 (en) * | 2003-03-19 | 2004-04-13 | United Microelectronics Corp. | Method for forming a cantilever beam model micro-electromechanical system |
US6829132B2 (en) * | 2003-04-30 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Charge control of micro-electromechanical device |
TW591716B (en) * | 2003-05-26 | 2004-06-11 | Prime View Int Co Ltd | A structure of a structure release and manufacturing the same |
TW570896B (en) * | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7190380B2 (en) * | 2003-09-26 | 2007-03-13 | Hewlett-Packard Development Company, L.P. | Generating and displaying spatially offset sub-frames |
US7173314B2 (en) * | 2003-08-13 | 2007-02-06 | Hewlett-Packard Development Company, L.P. | Storage device having a probe and a storage cell with moveable parts |
TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI305599B (en) * | 2003-08-15 | 2009-01-21 | Qualcomm Mems Technologies Inc | Interference display panel and method thereof |
TWI251712B (en) * | 2003-08-15 | 2006-03-21 | Prime View Int Corp Ltd | Interference display plate |
TW593127B (en) * | 2003-08-18 | 2004-06-21 | Prime View Int Co Ltd | Interference display plate and manufacturing method thereof |
TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
US20050057442A1 (en) * | 2003-08-28 | 2005-03-17 | Olan Way | Adjacent display of sequential sub-images |
TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
US6982820B2 (en) * | 2003-09-26 | 2006-01-03 | Prime View International Co., Ltd. | Color changeable pixel |
US20050068583A1 (en) * | 2003-09-30 | 2005-03-31 | Gutkowski Lawrence J. | Organizing a digital image |
US6861277B1 (en) * | 2003-10-02 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Method of forming MEMS device |
-
2002
- 2002-09-20 US US10/251,196 patent/US7550794B2/en not_active Expired - Lifetime
-
2003
- 2003-09-18 JP JP2004538461A patent/JP4800619B2/en not_active Expired - Fee Related
- 2003-09-18 AU AU2003275194A patent/AU2003275194A1/en not_active Abandoned
- 2003-09-18 ES ES03759463.7T patent/ES2523980T3/en not_active Expired - Lifetime
- 2003-09-18 EP EP03759463.7A patent/EP1540738B1/en not_active Expired - Lifetime
- 2003-09-18 CA CA2499208A patent/CA2499208C/en not_active Expired - Fee Related
- 2003-09-18 KR KR1020057004794A patent/KR101060544B1/en not_active IP Right Cessation
- 2003-09-18 KR KR1020117009971A patent/KR101117059B1/en not_active IP Right Cessation
- 2003-09-18 MX MXPA05003078A patent/MXPA05003078A/en active IP Right Grant
- 2003-09-18 CN CN038219867A patent/CN1723571B/en not_active Expired - Fee Related
- 2003-09-18 RU RU2005111765/28A patent/RU2348088C2/en not_active IP Right Cessation
- 2003-09-18 BR BR0314604-9A patent/BR0314604A/en not_active Application Discontinuation
- 2003-09-18 WO PCT/US2003/030016 patent/WO2004026757A2/en active Application Filing
- 2003-09-19 TW TW092125860A patent/TWI289538B/en not_active IP Right Cessation
-
2006
- 2006-05-03 HK HK06105235.8A patent/HK1085305A1/en not_active IP Right Cessation
-
2009
- 2009-06-22 US US12/489,250 patent/US8368124B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2004026757A2 (en) | 2004-04-01 |
EP1540738A2 (en) | 2005-06-15 |
CA2499208A1 (en) | 2004-04-01 |
CN1723571A (en) | 2006-01-18 |
US8368124B2 (en) | 2013-02-05 |
JP2006500231A (en) | 2006-01-05 |
AU2003275194A1 (en) | 2004-04-08 |
BR0314604A (en) | 2005-07-26 |
TW200404736A (en) | 2004-04-01 |
WO2004026757A3 (en) | 2004-06-24 |
KR20050046796A (en) | 2005-05-18 |
US7550794B2 (en) | 2009-06-23 |
HK1085305A1 (en) | 2006-08-18 |
JP4800619B2 (en) | 2011-10-26 |
CN1723571B (en) | 2012-06-20 |
US20040058532A1 (en) | 2004-03-25 |
TWI289538B (en) | 2007-11-11 |
KR101117059B1 (en) | 2012-02-29 |
RU2005111765A (en) | 2006-01-20 |
KR101060544B1 (en) | 2011-08-30 |
RU2348088C2 (en) | 2009-02-27 |
ES2523980T3 (en) | 2014-12-03 |
US20090323168A1 (en) | 2009-12-31 |
MXPA05003078A (en) | 2005-11-17 |
EP1540738B1 (en) | 2014-09-17 |
KR20110054075A (en) | 2011-05-24 |
EP1540738A4 (en) | 2010-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2499208C (en) | Controlling electromechanical behavior of structures within a microelectromechanical systems device | |
US8278726B2 (en) | Controlling electromechanical behavior of structures within a microelectromechanical systems device | |
US6515791B1 (en) | Active reflection and anti-reflection optical switch | |
US6713367B2 (en) | Self-aligned vertical combdrive actuator and method of fabrication | |
EP0690329B1 (en) | Improved hinge for micro-mechanical device | |
KR940012024A (en) | Micro photo-switching device and its manufacturing method | |
US6392221B1 (en) | Micro-electro-mechanical optical device | |
Al Nusayer et al. | 39‐4: TFT Integrated Microelectromechanical Shutter for Display Application | |
WO2003079091A1 (en) | An adressing method of moveable microelements in a spatial light modulator (slm) for pattering of a workpiece | |
JP4391076B2 (en) | Microactuator with holding mechanism and method for manufacturing the same | |
CN101027594A (en) | Controlling electromechanical behavior of structures within a microelectromechanical systems device | |
US7106492B2 (en) | Bias voltage routing scheme for a digital micro-mirror device | |
CN113292036A (en) | Rotating structure and preparation method thereof | |
CN111629991A (en) | Interposer substrate, MEMS device and corresponding manufacturing method | |
EP1828831A1 (en) | Slm structure comprising semiconducting material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |
Effective date: 20190918 |