CA2520140A1 - Split-channel antifuse array architecture - Google Patents

Split-channel antifuse array architecture Download PDF

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Publication number
CA2520140A1
CA2520140A1 CA002520140A CA2520140A CA2520140A1 CA 2520140 A1 CA2520140 A1 CA 2520140A1 CA 002520140 A CA002520140 A CA 002520140A CA 2520140 A CA2520140 A CA 2520140A CA 2520140 A1 CA2520140 A1 CA 2520140A1
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Canada
Prior art keywords
gate oxide
channel
polysilicon gate
gate
fuse
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Granted
Application number
CA002520140A
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French (fr)
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CA2520140C (en
Inventor
Wlodek Kurjanowicz
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Synopsys Inc
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Sidense Corp
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Application filed by Sidense Corp filed Critical Sidense Corp
Publication of CA2520140A1 publication Critical patent/CA2520140A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Generally, the present invention provides a variable thickness gate oxide anti-fuse transistor device that can be employed in a non-volatile, one-time-programmable (OTP) memory array application. The anti-fuse transistor can be fabricated with standard CMOS
technology, and is configured as a standard transistor element having a source diffusion, gate oxide, polysilicon gate and optional drain diffusion. The variable gate oxide underneath the polysilicon gate consists of a thick gate oxide region and a thin gate oxide region, where the thin gate oxide region acts as a localized breakdown voltage zone. A
conductive channel between the polysilicon gate and the channel region can be formed in the localized breakdown voltage zone during a programming operation. In a memory array application, a wordline read current applied to the polysilicon gate can be sensed through a bitline connected to the source diffusion, via the channel of the anti-fuse transistor. More specifically, the present invention provides an effective method for utilizing split channel MOS structures as an anti-fuse cell suitable for OTP
memories.
CA002520140A 2004-05-06 2005-05-06 Split-channel antifuse array architecture Active CA2520140C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US56831504P 2004-05-06 2004-05-06
US60/568,315 2004-05-06
PCT/CA2005/000701 WO2005109516A1 (en) 2004-05-06 2005-05-06 Split-channel antifuse array architecture

Publications (2)

Publication Number Publication Date
CA2520140A1 true CA2520140A1 (en) 2005-11-17
CA2520140C CA2520140C (en) 2007-05-15

Family

ID=35320478

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002520140A Active CA2520140C (en) 2004-05-06 2005-05-06 Split-channel antifuse array architecture

Country Status (7)

Country Link
US (3) US7402855B2 (en)
EP (1) EP1743380B1 (en)
JP (1) JP4981661B2 (en)
KR (1) KR101144218B1 (en)
CA (1) CA2520140C (en)
IL (1) IL179080A (en)
WO (1) WO2005109516A1 (en)

Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7211418B2 (en) * 1999-01-14 2007-05-01 Martek Biosciences Corporation PUFA polyketide synthase systems and uses thereof
JP3935139B2 (en) 2002-11-29 2007-06-20 株式会社東芝 Semiconductor memory device
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
US7511982B2 (en) * 2004-05-06 2009-03-31 Sidense Corp. High speed OTP sensing scheme
US7755162B2 (en) * 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
US8767433B2 (en) 2004-05-06 2014-07-01 Sidense Corp. Methods for testing unprogrammed OTP memory
US7402855B2 (en) 2004-05-06 2008-07-22 Sidense Corp. Split-channel antifuse array architecture
US7190629B2 (en) * 2005-02-08 2007-03-13 Micron Technology, Inc. Circuit and method for reading an antifuse
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
US7915916B2 (en) * 2006-06-01 2011-03-29 Micron Technology, Inc. Antifuse programming circuit with snapback select transistor
US8122307B1 (en) * 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7755132B2 (en) * 2006-08-16 2010-07-13 Sandisk Corporation Nonvolatile memories with shaped floating gates
JP2008090895A (en) * 2006-09-29 2008-04-17 Toshiba Corp Semiconductor memory
JP5448837B2 (en) * 2006-12-22 2014-03-19 シデンス・コーポレーション Mask programmable antifuse structure
US7471540B2 (en) * 2007-01-24 2008-12-30 Kilopass Technology, Inc. Non-volatile semiconductor memory based on enhanced gate oxide breakdown
US7888200B2 (en) 2007-01-31 2011-02-15 Sandisk 3D Llc Embedded memory in a CMOS circuit and methods of forming the same
US7868388B2 (en) * 2007-01-31 2011-01-11 Sandisk 3D Llc Embedded memory in a CMOS circuit and methods of forming the same
US20080296701A1 (en) * 2007-05-29 2008-12-04 Ememory Technology Inc. One-time programmable read-only memory
FI122011B (en) * 2007-06-08 2011-07-15 Teknologian Tutkimuskeskus Vtt Method for Producing an Electronic Module, Intermediate to Produce an Electronic Module, Memory Element, Printed Electronic Product, Sensor Device, and RFID Tag
US20090039462A1 (en) * 2007-08-07 2009-02-12 Mediatek Inc. Efuse devices and efuse arrays thereof and efuse blowing methods
US8058701B2 (en) * 2007-10-16 2011-11-15 Samsung Electronics Co., Ltd. Antifuse structures, antifuse array structures, methods of manufacturing the same
JP2009147003A (en) * 2007-12-12 2009-07-02 Toshiba Corp Semiconductor memory device
JP5537020B2 (en) * 2008-01-18 2014-07-02 ルネサスエレクトロニクス株式会社 Nonvolatile semiconductor memory device
JP2009206490A (en) * 2008-01-30 2009-09-10 Elpida Memory Inc Semiconductor device and method of manufacturing the same
KR101051673B1 (en) * 2008-02-20 2011-07-26 매그나칩 반도체 유한회사 Anti-fuse and method of forming the same, unit cell of nonvolatile memory device having same
US8526254B2 (en) 2008-04-03 2013-09-03 Sidense Corp. Test cells for an unprogrammed OTP memory array
US8059479B2 (en) * 2008-04-03 2011-11-15 Sidense Corp. Test circuit for an unprogrammed OTP memory array
US8933492B2 (en) * 2008-04-04 2015-01-13 Sidense Corp. Low VT antifuse device
US20090309139A1 (en) * 2008-06-13 2009-12-17 International Business Machines Corporation Asymmetric gate electrode and method of manufacture
US7825479B2 (en) * 2008-08-06 2010-11-02 International Business Machines Corporation Electrical antifuse having a multi-thickness dielectric layer
WO2010030957A1 (en) * 2008-09-11 2010-03-18 Eetrex Incorporated Bi-directional inverter-charger
US8101471B2 (en) * 2008-12-30 2012-01-24 Intel Corporation Method of forming programmable anti-fuse element
TWI489471B (en) * 2009-02-06 2015-06-21 Sidense Corp High reliability otp memory
US8049299B2 (en) * 2009-02-25 2011-11-01 Freescale Semiconductor, Inc. Antifuses with curved breakdown regions
CA2692887C (en) * 2009-02-27 2011-04-12 Sidense Corp. Low power antifuse sensing scheme with improved reliability
US8138037B2 (en) * 2009-03-17 2012-03-20 International Business Machines Corporation Method and structure for gate height scaling with high-k/metal gate technology
US8054673B2 (en) * 2009-04-16 2011-11-08 Seagate Technology Llc Three dimensionally stacked non volatile memory units
JP2011100823A (en) * 2009-11-05 2011-05-19 Renesas Electronics Corp Semiconductor memory device, and method of manufacturing the same
US9378443B2 (en) 2009-05-14 2016-06-28 Ascensia Diabetes Care Holding Ag Calibration coded sensors and apparatus, systems and methods for reading same
US8203188B2 (en) * 2009-05-22 2012-06-19 Broadcom Corporation Split gate oxides for a laterally diffused metal oxide semiconductor (LDMOS)
US8638589B2 (en) * 2009-07-30 2014-01-28 Ememory Technology Inc. Operating method for non-volatile memory unit
US9013910B2 (en) * 2009-07-30 2015-04-21 Ememory Technology Inc. Antifuse OTP memory cell with performance improvement prevention and operating method of memory
US8208312B1 (en) 2009-09-22 2012-06-26 Novocell Semiconductor, Inc. Non-volatile memory element integratable with standard CMOS circuitry
US8134859B1 (en) 2009-09-25 2012-03-13 Novocell Semiconductor, Inc. Method of sensing a programmable non-volatile memory element
US8199590B1 (en) 2009-09-25 2012-06-12 Novocell Semiconductor, Inc. Multiple time programmable non-volatile memory element
CN102612717B (en) 2009-10-30 2016-05-04 赛鼎矽公司 Two trap raceway groove division OTP memory cell
US8471355B2 (en) * 2009-10-30 2013-06-25 Sidense Corp. AND-type one time programmable memory cell
US8227873B2 (en) * 2010-04-09 2012-07-24 Broadcom Corporation Integrated one-time programmable semiconductor device pair
US8283722B2 (en) 2010-06-14 2012-10-09 Broadcom Corporation Semiconductor device having an enhanced well region
KR101338736B1 (en) * 2010-07-28 2013-12-06 매그나칩 반도체 유한회사 Anti fuse and forming method thereof, unit cell of nonvolatile memory device having the same
US9224496B2 (en) * 2010-08-11 2015-12-29 Shine C. Chung Circuit and system of aggregated area anti-fuse in CMOS processes
US9496033B2 (en) 2010-08-20 2016-11-15 Attopsemi Technology Co., Ltd Method and system of programmable resistive devices with read capability using a low supply voltage
US9236141B2 (en) 2010-08-20 2016-01-12 Shine C. Chung Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
US9019742B2 (en) 2010-08-20 2015-04-28 Shine C. Chung Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
US8488359B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices
US9824768B2 (en) 2015-03-22 2017-11-21 Attopsemi Technology Co., Ltd Integrated OTP memory for providing MTP memory
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
US9025357B2 (en) 2010-08-20 2015-05-05 Shine C. Chung Programmable resistive memory unit with data and reference cells
US9251893B2 (en) 2010-08-20 2016-02-02 Shine C. Chung Multiple-bit programmable resistive memory using diode as program selector
US8559208B2 (en) 2010-08-20 2013-10-15 Shine C. Chung Programmably reversible resistive device cells using polysilicon diodes
US9460807B2 (en) 2010-08-20 2016-10-04 Shine C. Chung One-time programmable memory devices using FinFET technology
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US9711237B2 (en) 2010-08-20 2017-07-18 Attopsemi Technology Co., Ltd. Method and structure for reliable electrical fuse programming
US9431127B2 (en) 2010-08-20 2016-08-30 Shine C. Chung Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
US10249379B2 (en) 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US8830720B2 (en) * 2010-08-20 2014-09-09 Shine C. Chung Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
US9042153B2 (en) 2010-08-20 2015-05-26 Shine C. Chung Programmable resistive memory unit with multiple cells to improve yield and reliability
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US8339831B2 (en) 2010-10-07 2012-12-25 Ememory Technology Inc. Single polysilicon non-volatile memory
KR101140106B1 (en) * 2010-10-14 2012-04-30 에스케이하이닉스 주식회사 Anti-fuse of semiconductor device and method for manufacturing the same
US9076513B2 (en) 2010-11-03 2015-07-07 Shine C. Chung Low-pin-count non-volatile memory interface with soft programming capability
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US9632055B2 (en) * 2010-11-12 2017-04-25 Ascensia Diabetes Care Holdings Ag Auto-coded analyte sensors and apparatus, systems, and methods for detecting same
KR101718458B1 (en) * 2010-11-15 2017-03-22 삼성전자 주식회사 Semiconductor device having fuse array and operating method thereof
CN102544011A (en) 2010-12-08 2012-07-04 庄建祥 Anti-fuse memory and electronic system
US9123807B2 (en) 2010-12-28 2015-09-01 Broadcom Corporation Reduction of parasitic capacitance in a semiconductor device
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US8258586B1 (en) * 2011-03-11 2012-09-04 Texas Instruments Incorporated Non-volatile anti-fuse with consistent rupture
WO2012134239A2 (en) * 2011-03-31 2012-10-04 한양대학교 산학협력단 Apparatus and method for generating a digital value
EP2544227A1 (en) 2011-07-07 2013-01-09 eMemory Technology Inc. Non-volatile memory cell structure and method for programming and reading the same
JP5696620B2 (en) 2011-08-22 2015-04-08 富士通セミコンダクター株式会社 FUSE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
US8969999B2 (en) * 2011-10-27 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US8912576B2 (en) 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
KR20130095554A (en) 2012-02-20 2013-08-28 삼성전자주식회사 Anti-fuse circuit and semiconductor device having the same
US9502424B2 (en) 2012-06-29 2016-11-22 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US9842802B2 (en) 2012-06-29 2017-12-12 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
KR101916463B1 (en) * 2012-06-29 2018-11-07 에스케이하이닉스 주식회사 Antifuse of semiconductor device and manufacturing method of the same
ITTO20120682A1 (en) * 2012-07-31 2014-02-01 St Microelectronics Pvt Ltd NON-VOLATILE MEMORY DEVICE WITH GROUPED CELLS
US8681528B2 (en) 2012-08-21 2014-03-25 Ememory Technology Inc. One-bit memory cell for nonvolatile memory and associated controlling method
KR101927443B1 (en) 2012-08-22 2018-12-10 에스케이하이닉스 주식회사 Semiconductor device and method for fabricating the same
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
KR20140058220A (en) * 2012-11-06 2014-05-14 에스케이하이닉스 주식회사 Anti-fuse of semiconductor device and method for fabricating the same
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
KR101966278B1 (en) * 2012-12-28 2019-04-08 에스케이하이닉스 주식회사 Anti fuse arrary of semiconductor device and method for fabricating the same
US9018975B2 (en) * 2013-02-15 2015-04-28 Intel Corporation Methods and systems to stress-program an integrated circuit
US9761595B2 (en) * 2013-02-21 2017-09-12 Infineon Technologies Ag One-time programming device and a semiconductor device
US8912582B2 (en) 2013-03-13 2014-12-16 Analog Devices, Inc. Integrated circuit structure and method for protection from damage to gate dielectric
US9391617B2 (en) 2013-03-15 2016-07-12 Intel Corporation Hardware-embedded key based on random variations of a stress-hardened inegrated circuit
TWI503824B (en) * 2013-09-13 2015-10-11 Lin Chrong Jung Memory array and non-volatile memory device of the same
KR102173038B1 (en) * 2013-11-26 2020-11-02 에스케이하이닉스 주식회사 Anti-fuse of semiconductor device and method for fabricating the same
US9219146B2 (en) * 2013-12-27 2015-12-22 Monolithic Power Systems, Inc. High voltage PMOS and the method for forming thereof
TWI512738B (en) * 2014-01-06 2015-12-11 中原大學 Write and read circuit for anti-fuse non-volatile memory
JP2015185180A (en) 2014-03-20 2015-10-22 株式会社東芝 configuration memory
KR102204054B1 (en) * 2014-03-24 2021-01-18 인텔 코포레이션 Antifuse element using spacer breakdown
WO2015148944A1 (en) * 2014-03-27 2015-10-01 Qualcomm Incorporated Integrated circuit device featuring an antifuse and method of making same
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
US9202815B1 (en) * 2014-06-20 2015-12-01 Infineon Technologies Ag Method for processing a carrier, a carrier, and a split gate field effect transistor structure
KR102201081B1 (en) * 2014-07-01 2021-01-11 삼성전자주식회사 eFuse test device
KR102169197B1 (en) * 2014-09-16 2020-10-22 에스케이하이닉스 주식회사 Antifuse OTP memory cell and cell array having improved program efficiency
JP6329882B2 (en) * 2014-10-31 2018-05-23 株式会社フローディア Antifuse memory and semiconductor memory device
JP2016170833A (en) 2015-03-12 2016-09-23 株式会社東芝 Semiconductor device
US9515835B2 (en) 2015-03-24 2016-12-06 Intel Corporation Stable probing-resilient physically unclonable function (PUF) circuit
KR102369926B1 (en) * 2015-04-10 2022-03-04 에스케이하이닉스 주식회사 Anti-fuse, anti-fuse array and method of operating the same
US9659944B2 (en) * 2015-06-30 2017-05-23 Avago Technologies General Ip (Singapore) Pte. Ltd. One time programmable memory with a twin gate structure
US9799662B2 (en) * 2015-08-18 2017-10-24 Ememory Technology Inc. Antifuse-type one time programming memory cell and array structure with same
US10181357B2 (en) 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
TWI578325B (en) * 2015-08-18 2017-04-11 力旺電子股份有限公司 Antifuse-type one time programming memory cell and array structure with same
GB2571641B (en) 2015-09-01 2020-02-19 Lattice Semiconductor Corp Multi-time programmable non-volatile memory cell
US10032783B2 (en) * 2015-10-30 2018-07-24 Globalfoundries Singapore Pte. Ltd. Integrated circuits having an anti-fuse device and methods of forming the same
US10043578B2 (en) * 2015-11-12 2018-08-07 Mediatek Inc. Sense amplifier circuits
TWI689933B (en) 2016-01-08 2020-04-01 美商希諾皮斯股份有限公司 Puf value generation using an anti-fuse memory array
US9922722B2 (en) 2016-04-07 2018-03-20 Stmicroelectronics S.R.L. Antifuse cell with capacitor and transistors
EP3229237A1 (en) 2016-04-07 2017-10-11 STMicroelectronics Srl An antifuse cell, and corresponding circuit, electronic device, and method
US10020268B2 (en) * 2016-04-13 2018-07-10 Ememory Technology Inc. Random number generator device and control method thereof
FR3050319B1 (en) * 2016-04-14 2018-05-11 Stmicroelectronics Sa MEMORY CONFIGURABLE MEMORY
WO2017194335A2 (en) 2016-05-09 2017-11-16 Intrinsic Id B.V. Programming device arranged to obtain and store a random bit string in a memory device
US10910079B2 (en) 2016-05-09 2021-02-02 Intrinsic Id B.V. Programming device arranged to obtain and store a random bit string in a memory device
CA2940152C (en) 2016-05-18 2017-08-29 Sidense Corp. Method and system for power signature suppression in memory devices
US9806084B1 (en) 2016-06-06 2017-10-31 International Business Machines Corporation Anti-fuse with reduced programming voltage
KR102178025B1 (en) 2016-08-09 2020-11-13 매그나칩 반도체 유한회사 OTP Cell Having a Reduced Layout Area
US9917090B1 (en) 2016-08-22 2018-03-13 International Business Machines Corporation Vertical antifuse structures
US20180138307A1 (en) * 2016-11-17 2018-05-17 Globalfoundries Inc. Tunnel finfet with self-aligned gate
US10062445B2 (en) * 2016-12-02 2018-08-28 Globalfoundries Inc. Parallel programming of one time programmable memory array for reduced test time
US9953727B1 (en) * 2017-02-10 2018-04-24 Globalfoundries Inc. Circuit and method for detecting time dependent dielectric breakdown (TDDB) shorts and signal-margin testing
US10134860B2 (en) * 2017-03-13 2018-11-20 Nxp B.V. Semiconductor device having a dielectric layer with different thicknesses and method for forming
JP6349008B1 (en) * 2017-04-13 2018-06-27 力旺電子股▲ふん▼有限公司ｅＭｅｍｏｒｙ Ｔｅｃｈｎｏｌｏｇｙ Ｉｎｃ． Random number generator and control method thereof
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10276679B2 (en) * 2017-05-30 2019-04-30 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same
US10720389B2 (en) * 2017-11-02 2020-07-21 Nanya Technology Corporation Anti-fuse structure
US10777265B2 (en) 2017-11-13 2020-09-15 International Business Machines Corporation Enhanced FDSOI physically unclonable function
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
US10615166B2 (en) 2017-12-19 2020-04-07 International Business Machines Corporation Programmable device compatible with vertical transistor flow
GB2572148B (en) 2018-03-19 2020-09-16 X-Fab Semiconductor Foundries Gmbh Programmable read-only memory device
WO2019194008A1 (en) 2018-04-02 2019-10-10 株式会社ソシオネクスト Semiconductor storage device
US10867674B1 (en) 2018-06-04 2020-12-15 Synopsys, Inc. One-time programmable (OTP) anti-fuse memory cell
US10964708B2 (en) * 2018-06-26 2021-03-30 Micron Technology, Inc. Fuse-array element
US10964738B2 (en) * 2018-10-02 2021-03-30 Omnivision Technologies, Inc. Image sensor having a source follower transistor with a multi-thickness gate dielectric
US10903217B2 (en) 2019-01-18 2021-01-26 Globalfoundries Singapore Pte. Ltd. Anti-fuse memory cell and a method for forming the anti-fuse memory cell
CN109859793B (en) * 2019-03-07 2021-02-23 珠海创飞芯科技有限公司 Multi-threshold OTP memory cell and control method
US10991761B2 (en) 2019-05-13 2021-04-27 Sandisk Technologies Llc Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same
US10879313B2 (en) 2019-05-13 2020-12-29 Sandisk Technologies Llc Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same
JP7123860B2 (en) 2019-06-17 2022-08-23 株式会社東芝 Arithmetic unit
WO2020262248A1 (en) 2019-06-28 2020-12-30 株式会社ソシオネクスト Semiconductor storage device
US11296096B2 (en) 2019-11-08 2022-04-05 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse OTP structure with hybrid junctions
US11217595B2 (en) 2020-01-15 2022-01-04 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse OTP structure with hybrid device and hybrid junction for select transistor
US11158641B2 (en) 2020-02-12 2021-10-26 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse OTP structures with hybrid devices and hybrid junctions
US11074985B1 (en) 2020-02-25 2021-07-27 HeFeChip Corporation Limited One-time programmable memory device and method for operating the same
US11018143B1 (en) 2020-03-12 2021-05-25 Zhuhai Chuangfeixin Technology Co., Ltd. Antifuse OTP structures with hybrid low-voltage devices
JP2021149996A (en) 2020-03-23 2021-09-27 株式会社東芝 Semiconductor storage device and semiconductor storage device control method
US11152381B1 (en) 2020-04-13 2021-10-19 HeFeChip Corporation Limited MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same
US11114140B1 (en) 2020-04-23 2021-09-07 HeFeChip Corporation Limited One time programmable (OTP) bits for physically unclonable functions
US11437082B2 (en) 2020-05-17 2022-09-06 HeFeChip Corporation Limited Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage
US11641739B2 (en) 2020-06-01 2023-05-02 Globalfoundries Singapore Pte. Ltd. Semiconductor non-volatile memory devices
KR20220157055A (en) * 2021-05-20 2022-11-29 삼성전자주식회사 One-time programmable (otp) memory device and method of operating an otp memory device

Family Cites Families (215)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423646A (en) 1965-02-01 1969-01-21 Sperry Rand Corp Computer logic device consisting of an array of tunneling diodes,isolators and short circuits
US3634929A (en) 1968-11-02 1972-01-18 Tokyo Shibaura Electric Co Method of manufacturing semiconductor integrated circuits
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
GB1311178A (en) * 1970-09-19 1973-03-21 Ferranti Ltd Semiconductor devices
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
US4611308A (en) * 1978-06-29 1986-09-09 Westinghouse Electric Corp. Drain triggered N-channel non-volatile memory
US4502208A (en) * 1979-01-02 1985-03-05 Texas Instruments Incorporated Method of making high density VMOS electrically-programmable ROM
US4322822A (en) 1979-01-02 1982-03-30 Mcpherson Roger K High density VMOS electrically programmable ROM
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
JPS577162A (en) * 1980-06-17 1982-01-14 Toshiba Corp Nonvolatile semiconductor memory and manufacture therefor
EP0068058B1 (en) * 1981-06-25 1986-09-03 International Business Machines Corporation Electrically programmable read-only memory
US4613886A (en) * 1981-07-09 1986-09-23 Intel Corporation CMOS static memory cell
US4490900A (en) * 1982-01-29 1985-01-01 Seeq Technology, Inc. Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
EP0089457A3 (en) * 1982-03-23 1986-01-22 Texas Instruments Incorporated Avalanche fuse element as programmable memory
US4507757A (en) 1982-03-23 1985-03-26 Texas Instruments Incorporated Avalanche fuse element in programmable memory
US4543594A (en) 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
US4546273A (en) * 1983-01-11 1985-10-08 Burroughs Corporation Dynamic re-programmable PLA
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
JPS60115687A (en) * 1983-11-28 1985-06-22 Mitsubishi Heavy Ind Ltd Heat recovery from high-temperature gas containing tar
US4870302A (en) * 1984-03-12 1989-09-26 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
JPS61289600A (en) 1985-06-17 1986-12-19 Fujitsu Ltd Semiconductor memory device
US4823181A (en) 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US4899205A (en) 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4943538A (en) * 1986-05-09 1990-07-24 Actel Corporation Programmable low impedance anti-fuse element
US5266829A (en) * 1986-05-09 1993-11-30 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4876220A (en) * 1986-05-16 1989-10-24 Actel Corporation Method of making programmable low impedance interconnect diode element
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
US4853181A (en) * 1986-06-18 1989-08-01 Wert David E Hot work tool steel
US4758745B1 (en) * 1986-09-19 1994-11-15 Actel Corp User programmable integrated circuit interconnect architecture and test method
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
JPS6384168A (en) * 1986-09-29 1988-04-14 Toshiba Corp Nonvolatile semiconductor memory device
US4758986A (en) * 1987-02-20 1988-07-19 Motorola, Inc. Single transistor cell for electrically-erasable programmable read-only memory and array thereof
GB8706872D0 (en) * 1987-03-23 1987-04-29 Nat Res Dev Prophylactic/therapeutic treatment of bacterial infections
JP2688492B2 (en) 1987-06-19 1997-12-10 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド Electrically erasable programmable read-only memory
US5303185A (en) * 1988-02-05 1994-04-12 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5008721A (en) * 1988-07-15 1991-04-16 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel
US5019878A (en) 1989-03-31 1991-05-28 Texas Instruments Incorporated Programmable interconnect or cell using silicided MOS transistors
US5068696A (en) 1989-03-31 1991-11-26 Texas Instruments Incorporated Programmable interconnect or cell using silicided MOS transistors
US4962342A (en) * 1989-05-04 1990-10-09 Synaptics, Inc. Dynamic synapse for neural network
FR2655762B1 (en) * 1989-12-07 1992-01-17 Sgs Thomson Microelectronics PROGRAMMABLE TUNNEL OXIDE BREAKING MOS FUSE.
JPH081933B2 (en) * 1989-12-11 1996-01-10 株式会社東芝 Nonvolatile semiconductor memory device
US5029130A (en) * 1990-01-22 1991-07-02 Silicon Storage Technology, Inc. Single transistor non-valatile electrically alterable semiconductor memory device
JP2564673B2 (en) * 1990-01-25 1996-12-18 シャープ株式会社 Nonvolatile semiconductor memory device
US5138423A (en) * 1990-02-06 1992-08-11 Matsushita Electronics Corporation Programmable device and a method of fabricating the same
US5057451A (en) 1990-04-12 1991-10-15 Actel Corporation Method of forming an antifuse element with substantially reduced capacitance using the locos technique
JPH0444273A (en) * 1990-06-07 1992-02-14 Fujitsu Ltd Insulated-gate field-effect transistor
US5150179A (en) * 1990-07-05 1992-09-22 Texas Instruments Incorporated Diffusionless source/drain conductor electrically-erasable, electrically-programmable read-only memory and method for making and using the same
JPH0491469A (en) * 1990-08-01 1992-03-24 Sharp Corp Nonvolatile semiconductor memory
JP2597741B2 (en) * 1990-08-30 1997-04-09 シャープ株式会社 Non-volatile memory device
JP2744126B2 (en) * 1990-10-17 1998-04-28 株式会社東芝 Semiconductor device
US5254489A (en) * 1990-10-18 1993-10-19 Nec Corporation Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation
US5087958A (en) * 1990-11-05 1992-02-11 Actel Corporation Misalignment tolerant antifuse
US5163180A (en) 1991-01-18 1992-11-10 Actel Corporation Low voltage programming antifuse and transistor breakdown method for making same
US5701027A (en) 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5241496A (en) 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5110754A (en) 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
JPH05128886A (en) * 1991-10-31 1993-05-25 Nippon Steel Corp Semiconductor memory device
FR2689263A1 (en) * 1992-03-25 1993-10-01 Trt Telecom Radio Electr Device comprising means for validating data written in a memory.
DE4311358C2 (en) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Non-volatile semiconductor memory device and operating method for a non-volatile semiconductor memory device and method for programming information into a non-volatile semiconductor memory device
US5323351A (en) * 1992-06-10 1994-06-21 Nexcom Technology, Inc. Method and apparatus for programming electrical erasable programmable read-only memory arrays
US5304871A (en) * 1992-07-24 1994-04-19 Actel Corporation Programmable interconnect architecture employing leaky programmable elements
FR2697673B1 (en) * 1992-10-29 1994-12-16 Gemplus Card Int Fuse circuit, for integrated circuit.
US5416343A (en) * 1992-11-20 1995-05-16 U.S. Philips Corporation Semiconductor device provided with a number of programmable elements
TW225044B (en) * 1992-11-20 1994-06-11 Philips Electronics Nv
KR950004870B1 (en) * 1992-11-24 1995-05-15 삼성전자 주식회사 Isolation gate circuit with improved reliability in burn-in mode
US5330920A (en) * 1993-06-15 1994-07-19 Digital Equipment Corporation Method of controlling gate oxide thickness in the fabrication of semiconductor devices
US6249809B1 (en) 1993-08-30 2001-06-19 William L. Bro Automated and interactive telecommunications system
US5586270A (en) * 1993-09-30 1996-12-17 Intel Corporation Method and apparatus for upgrading a central processing unit and existing memory structure in a computer system
BE1007591A3 (en) * 1993-10-05 1995-08-16 Philips Electronics Nv Programmable semiconductor device and semiconductor programmable memory including such semiconductor device.
US5477499A (en) * 1993-10-13 1995-12-19 Advanced Micro Devices, Inc. Memory architecture for a three volt flash EEPROM
US5455525A (en) * 1993-12-06 1995-10-03 Intelligent Logic Systems, Inc. Hierarchically-structured programmable logic array and system for interconnecting logic elements in the logic array
BE1008052A3 (en) * 1994-01-31 1996-01-03 Philips Electronics Nv Semiconductor device.
US5488579A (en) * 1994-04-29 1996-01-30 Motorola Inc. Three-dimensionally integrated nonvolatile SRAM cell and process
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
US5498577A (en) * 1994-07-26 1996-03-12 Advanced Micro Devices, Inc. Method for fabricating thin oxides for a semiconductor technology
US5650336A (en) * 1994-09-19 1997-07-22 Matsushita Electric Industrial Co., Ltd. Method of presuming life time of semiconductor device
US5595922A (en) * 1994-10-28 1997-01-21 Texas Instruments Process for thickening selective gate oxide regions
DE4440539C2 (en) * 1994-11-12 1996-09-19 Itt Ind Gmbh Deutsche Programmable semiconductor memory
US5587603A (en) * 1995-01-06 1996-12-24 Actel Corporation Two-transistor zero-power electrically-alterable non-volatile latch
US5576568A (en) * 1995-01-18 1996-11-19 Actel Corporation Single-transistor electrically-alterable switch employing fowler nordheim tunneling for program and erase
US5675547A (en) * 1995-06-01 1997-10-07 Sony Corporation One time programmable read only memory programmed by destruction of insulating layer
US5672994A (en) 1995-12-21 1997-09-30 International Business Machines Corporation Antifuse circuit using standard MOSFET devices
US5821766A (en) * 1996-02-20 1998-10-13 Hyundai Electronics Industries Co., Ltd. Method and apparatus for measuring the metallurgical channel length of a semiconductor device
US6096610A (en) * 1996-03-29 2000-08-01 Intel Corporation Transistor suitable for high voltage circuit
US5925904A (en) * 1996-04-03 1999-07-20 Altera Corporation Two-terminal electrically-reprogrammable programmable logic element
US6087707A (en) 1996-04-16 2000-07-11 Micron Technology, Inc. Structure for an antifuse cell
DE69626792T2 (en) * 1996-05-09 2004-03-25 Stmicroelectronics S.R.L., Agrate Brianza An electrically erasable and programmable nonvolatile memory device having testable redundancy circuits
US5847441A (en) * 1996-05-10 1998-12-08 Micron Technology, Inc. Semiconductor junction antifuse circuit
US5784636A (en) * 1996-05-28 1998-07-21 National Semiconductor Corporation Reconfigurable computer architecture for use in signal processing applications
US5825201A (en) 1996-06-21 1998-10-20 Quicklogic Corporation Programming architecture for a programmable integrated circuit employing antifuses
US5741737A (en) * 1996-06-27 1998-04-21 Cypress Semiconductor Corporation MOS transistor with ramped gate oxide thickness and method for making same
US6569101B2 (en) 2001-04-19 2003-05-27 Sonosite, Inc. Medical diagnostic ultrasound instrument with ECG module, authorization mechanism and methods of use
US5882993A (en) * 1996-08-19 1999-03-16 Advanced Micro Devices, Inc. Integrated circuit with differing gate oxide thickness and process for making same
US5742555A (en) 1996-08-20 1998-04-21 Micron Technology, Inc. Method of anti-fuse repair
US5850145A (en) * 1996-09-09 1998-12-15 Hewlett-Packard Co. Apparatus and method for soft error comparison testing
US5781032A (en) * 1996-09-09 1998-07-14 International Business Machines Corporation Programmable inverter circuit used in a programmable logic cell
US5892962A (en) * 1996-11-12 1999-04-06 Lucent Technologies Inc. FPGA-based processor
US5986931A (en) * 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
TW329041B (en) * 1997-01-27 1998-04-01 United Microelectronics Corp Super density ROM
TW417256B (en) 1997-01-31 2001-01-01 Seiko Epson Corp Semiconductor MOS device and its manufacturing method
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6016268A (en) 1997-02-18 2000-01-18 Richard Mann Three transistor multi-state dynamic memory cell for embedded CMOS logic applications
US5889411A (en) * 1997-02-26 1999-03-30 Xilinx, Inc. FPGA having logic element carry chains capable of generating wide XOR functions
US5949712A (en) * 1997-03-27 1999-09-07 Xilinx, Inc. Non-volatile memory array using gate breakdown structure
US5801991A (en) * 1997-03-31 1998-09-01 Intel Corporation Deselected word line that floats during MLC programming of a flash memory
US5899732A (en) * 1997-04-11 1999-05-04 Advanced Micro Devices, Inc. Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device
US6037224A (en) 1997-05-02 2000-03-14 Advanced Micro Devices, Inc. Method for growing dual oxide thickness using nitrided oxides for oxidation suppression
US6110783A (en) 1997-06-27 2000-08-29 Sun Microsystems, Inc. Method for forming a notched gate oxide asymmetric MOS device
US6121666A (en) 1997-06-27 2000-09-19 Sun Microsystems, Inc. Split gate oxide asymmetric MOS devices
US6040968A (en) 1997-06-30 2000-03-21 Texas Instruments Incorporated EOS/ESD protection for high density integrated circuits
US6077719A (en) 1997-07-24 2000-06-20 Matsushita Electronics Corporation Semiconductor device evaluation method, method of controlling the semiconductor device production processes and recording medium
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
US6218274B1 (en) 1997-10-28 2001-04-17 Sony Corporation Semiconductor device and manufacturing method thereof
JPH11135512A (en) * 1997-10-31 1999-05-21 Mitsubishi Electric Corp Power semiconductor device and manufacture thereof
US6047243A (en) 1997-12-11 2000-04-04 Advanced Micro Devices, Inc. Method for quantifying ultra-thin dielectric reliability: time dependent dielectric wear-out
US5918133A (en) * 1997-12-18 1999-06-29 Advanced Micro Devices Semiconductor device having dual gate dielectric thickness along the channel and fabrication thereof
US6080682A (en) 1997-12-18 2000-06-27 Advanced Micro Devices, Inc. Methodology for achieving dual gate oxide thicknesses
JPH11243185A (en) 1997-12-24 1999-09-07 Sanyo Electric Co Ltd Nonvolatile semiconductor memory
US6127235A (en) 1998-01-05 2000-10-03 Advanced Micro Devices Method for making asymmetrical gate oxide thickness in channel MOSFET region
TW364180B (en) 1998-01-12 1999-07-11 United Microelectronics Corp A method for producing buried diffusion junction
US6121795A (en) 1998-02-26 2000-09-19 Xilinx, Inc. Low-voltage input/output circuit with high voltage tolerance
US6064225A (en) 1998-03-20 2000-05-16 Lucent Technologies Inc. Global signal distribution with reduced routing tracks in an FPGA
US5963799A (en) * 1998-03-23 1999-10-05 Texas Instruments - Acer Incorporated Blanket well counter doping process for high speed/low power MOSFETs
IT1298816B1 (en) 1998-03-27 2000-02-02 Sgs Thomson Microelectronics SWITCHING CIRCUIT WITH VARIABLE OUTPUT VOLTAGE BETWEEN A REFERENCE VOLTAGE AND A NEGATIVE VOLTAGE
US6198652B1 (en) 1998-04-13 2001-03-06 Kabushiki Kaisha Toshiba Non-volatile semiconductor integrated memory device
US6429495B2 (en) * 1998-06-17 2002-08-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with address programming circuit
JP2000077627A (en) * 1998-06-17 2000-03-14 Mitsubishi Electric Corp Semiconductor element
DE19842883A1 (en) 1998-09-18 2000-03-30 Siemens Ag Electrically programmable, non-volatile memory cell arrangement
US6124171A (en) 1998-09-24 2000-09-26 Intel Corporation Method of forming gate oxide having dual thickness by oxidation process
US6304666B1 (en) 1998-10-07 2001-10-16 The United States Of America As Represented By The United States Department Of Energy Apparatus for sensing patterns of electrical field variations across a surface
JP2000123592A (en) 1998-10-19 2000-04-28 Mitsubishi Electric Corp Semiconductor device
TW449746B (en) * 1998-10-23 2001-08-11 Kaitech Engineering Inc Semiconductor memory device and method of making same
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US6232631B1 (en) 1998-12-21 2001-05-15 Vantis Corporation Floating gate memory cell structure with programming mechanism outside the read path
US6282123B1 (en) 1998-12-21 2001-08-28 Lattice Semiconductor Corporation Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
US6064595A (en) 1998-12-23 2000-05-16 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof
US6157568A (en) 1998-12-23 2000-12-05 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in first polysilicon layer
FR2787922B1 (en) 1998-12-23 2002-06-28 St Microelectronics Sa UNIQUE PROGRAMMED MEMORY CELL IN CMOS TECHNOLOGY
US6294809B1 (en) 1998-12-28 2001-09-25 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in polysilicon
US6335262B1 (en) 1999-01-14 2002-01-01 International Business Machines Corporation Method for fabricating different gate oxide thicknesses within the same chip
US6136674A (en) 1999-02-08 2000-10-24 Advanced Micro Devices, Inc. Mosfet with gate plug using differential oxide growth
US6236229B1 (en) 1999-05-13 2001-05-22 Easic Corporation Integrated circuits which employ look up tables to provide highly efficient logic cells and logic functionalities
US6229733B1 (en) 1999-03-24 2001-05-08 Texas Instruments Incorporated Non-volatile memory cell for linear mos integrated circuits utilizing fused mosfet gate oxide
US6034893A (en) 1999-06-15 2000-03-07 Vantis Corporation Non-volatile memory cell having dual avalanche injection elements
US6153463A (en) 1999-07-09 2000-11-28 Macronix International Co., Ltd. Triple plate capacitor and method for manufacturing
US6166954A (en) 1999-07-14 2000-12-26 Programmable Microelectronics Corporation Single poly non-volatile memory having a PMOS write path and an NMOS read path
US6096580A (en) 1999-09-24 2000-08-01 International Business Machines Corporation Low programming voltage anti-fuse
JP3275893B2 (en) 1999-09-27 2002-04-22 日本電気株式会社 Semiconductor storage element
US6515344B1 (en) 1999-10-28 2003-02-04 Advanced Micro Devices, Inc. Thin oxide anti-fuse
JP2001135017A (en) * 1999-11-02 2001-05-18 Nec Corp Data storage device and interface device therefor
JP3822768B2 (en) 1999-12-03 2006-09-20 株式会社ルネサステクノロジ IC card manufacturing method
TW502286B (en) 1999-12-09 2002-09-11 Koninkl Philips Electronics Nv Semiconductor device comprising a security coating and smartcard provided with such a device
US6678646B1 (en) 1999-12-14 2004-01-13 Atmel Corporation Method for implementing a physical design for a dynamically reconfigurable logic circuit
US6388305B1 (en) 1999-12-17 2002-05-14 International Business Machines Corporation Electrically programmable antifuses and methods for forming the same
US6272047B1 (en) 1999-12-17 2001-08-07 Micron Technology, Inc. Flash memory cell
US6459634B1 (en) 2000-01-31 2002-10-01 Micron Technology, Inc. Circuits and methods for testing memory cells along a periphery of a memory array
US6249460B1 (en) 2000-02-28 2001-06-19 Micron Technology, Inc. Dynamic flash memory cells with ultrathin tunnel oxides
US6297103B1 (en) 2000-02-28 2001-10-02 Micron Technology, Inc. Structure and method for dual gate oxide thicknesses
US6351428B2 (en) 2000-02-29 2002-02-26 Micron Technology, Inc. Programmable low voltage decode circuits with ultra-thin tunnel oxides
US6396120B1 (en) 2000-03-17 2002-05-28 International Business Machines Corporation Silicon anti-fuse structures, bulk and silicon on insulator fabrication methods and application
US6266269B1 (en) 2000-06-07 2001-07-24 Xilinx, Inc. Three terminal non-volatile memory element
US6611040B2 (en) 2000-06-08 2003-08-26 Tito Gelsomini Anti-fuse structure of writing and reading in integrated circuits
US6429686B1 (en) 2000-06-16 2002-08-06 Xilinx, Inc. Output driver circuit using thin and thick gate oxides
US6515509B1 (en) 2000-07-13 2003-02-04 Xilinx, Inc. Programmable logic device structures in standard cell devices
US6630724B1 (en) 2000-08-31 2003-10-07 Micron Technology, Inc. Gate dielectric antifuse circuits and methods for operating same
US6476636B1 (en) 2000-09-02 2002-11-05 Actel Corporation Tileable field-programmable gate array architecture
JP2002093745A (en) * 2000-09-12 2002-03-29 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device
JP2002134620A (en) 2000-10-27 2002-05-10 Mitsubishi Electric Corp Semiconductor device
US6465306B1 (en) 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
US6960819B2 (en) 2000-12-20 2005-11-01 Broadcom Corporation System and method for one-time programmed memory through direct-tunneling oxide breakdown
US6627970B2 (en) 2000-12-20 2003-09-30 Infineon Technologies Ag Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure
US6420925B1 (en) 2001-01-09 2002-07-16 International Business Machines Corporation Programmable latch device with integrated programmable element
US6580145B2 (en) 2001-01-16 2003-06-17 Taiwan Semiconductor Manufacturing Co., Ltd Low programming voltage anti-fuse structure
US6556481B1 (en) 2001-02-21 2003-04-29 Aplus Flash Technology, Inc. 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
US6531410B2 (en) * 2001-02-27 2003-03-11 International Business Machines Corporation Intrinsic dual gate oxide MOSFET using a damascene gate process
FR2822286A1 (en) * 2001-03-19 2002-09-20 St Microelectronics Sa EEPROM erasable/programmable memory having selected lock column delivering grid control detection signal/selecting bit lines following output locking element function during memory cell programme/read.
US6369422B1 (en) 2001-05-01 2002-04-09 Atmel Corporation Eeprom cell with asymmetric thin window
KR100421040B1 (en) 2001-05-07 2004-03-03 삼성전자주식회사 A semiconductor memory cell for reducing power consumption and data output time using controllable virtual ground
US6781887B2 (en) 2001-06-02 2004-08-24 Texas Instruments Incorporated Anti-fuse structure and method of writing and reading in integrated circuits
US6813406B2 (en) 2001-06-14 2004-11-02 Lightbay Networks Corporation Photonic switching apparatus for optical communication network
US6602729B2 (en) 2001-07-13 2003-08-05 Infineon Technologies Ag Pulse voltage breakdown (VBD) technique for inline gate oxide reliability monitoring
US6633182B2 (en) 2001-09-05 2003-10-14 Carnegie Mellon University Programmable gate array based on configurable metal interconnect vias
US6541792B1 (en) * 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
EP1436815B1 (en) * 2001-09-18 2010-03-03 Kilopass Technology, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US6992365B2 (en) 2001-10-12 2006-01-31 Ovonyx, Inc. Reducing leakage currents in memories with phase-change material
US6700151B2 (en) 2001-10-17 2004-03-02 Kilopass Technologies, Inc. Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
US6624031B2 (en) 2001-11-20 2003-09-23 International Business Machines Corporation Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
JP2003168734A (en) 2001-11-29 2003-06-13 Mitsubishi Electric Corp Semiconductor device, its control method, and its manufacturing method
US6754881B2 (en) 2001-12-10 2004-06-22 International Business Machines Corporation Field programmable network processor and method for customizing a network processor
US6545899B1 (en) * 2001-12-12 2003-04-08 Micron Technology, Inc. ROM embedded DRAM with bias sensing
US6597234B2 (en) 2001-12-14 2003-07-22 Motorola, Inc. Anti-fuse circuit and method of operation
US6756633B2 (en) 2001-12-27 2004-06-29 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges
US6808985B1 (en) 2002-02-21 2004-10-26 Taiwan Semiconductor Manufacturing Company Products derived from embedded flash/EEPROM products
JP2003257178A (en) 2002-03-06 2003-09-12 Matsushita Electric Ind Co Ltd Semiconductor memory device
FR2838861A1 (en) * 2002-04-23 2003-10-24 St Microelectronics Sa Electrically erasable and programmable memory comprising a device for managing an internal voltage supply
US6898116B2 (en) 2002-04-26 2005-05-24 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection
US6940751B2 (en) * 2002-04-26 2005-09-06 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown
US6777757B2 (en) * 2002-04-26 2004-08-17 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor
US6682980B2 (en) 2002-05-06 2004-01-27 Texas Instruments Incorporated Fabrication of abrupt ultra-shallow junctions using angled PAI and fluorine implant
US6713839B2 (en) * 2002-05-24 2004-03-30 Airip Antifuse structure with low resistance
US6650143B1 (en) 2002-07-08 2003-11-18 Kilopass Technologies, Inc. Field programmable gate array based upon transistor gate oxide breakdown
US6753590B2 (en) 2002-07-08 2004-06-22 International Business Machines Corporation High impedance antifuse
US6700176B2 (en) 2002-07-18 2004-03-02 Broadcom Corporation MOSFET anti-fuse structure and method for making same
US20040135198A1 (en) * 2002-07-23 2004-07-15 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same, nonvolatile semiconductor memory and method of fabricating the same, and electronic apparatus including nonvolatile semiconductor memory
US6751150B2 (en) 2002-08-29 2004-06-15 Micron Technology, Inc. Circuits and method to protect a gate dielectric antifuse
US6936909B2 (en) 2002-08-29 2005-08-30 Micron Technology, Inc. Gate dielectric antifuse circuit to protect a high-voltage transistor
KR100488542B1 (en) 2002-10-21 2005-05-11 삼성전자주식회사 semiconductor memory device of enhancing bitline precharge time
US7087499B2 (en) 2002-12-20 2006-08-08 International Business Machines Corporation Integrated antifuse structure for FINFET and CMOS devices
US6933557B2 (en) 2003-08-11 2005-08-23 Atmel Corporation Fowler-Nordheim block alterable EEPROM memory cell
US6903984B1 (en) 2003-12-31 2005-06-07 Intel Corporation Floating-body DRAM using write word line for increased retention time
US7402855B2 (en) 2004-05-06 2008-07-22 Sidense Corp. Split-channel antifuse array architecture
US7528015B2 (en) 2005-06-28 2009-05-05 Freescale Semiconductor, Inc. Tunable antifuse element and method of manufacture

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US7402855B2 (en) 2008-07-22
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