CA2562790A1 - Coolerless and floating wavelength grid photonic integrated circuits (pics) for wdm transmission networks - Google Patents

Coolerless and floating wavelength grid photonic integrated circuits (pics) for wdm transmission networks Download PDF

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Publication number
CA2562790A1
CA2562790A1 CA002562790A CA2562790A CA2562790A1 CA 2562790 A1 CA2562790 A1 CA 2562790A1 CA 002562790 A CA002562790 A CA 002562790A CA 2562790 A CA2562790 A CA 2562790A CA 2562790 A1 CA2562790 A1 CA 2562790A1
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pic
integrated circuit
photonic integrated
coolerless
wavelength
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CA002562790A
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French (fr)
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CA2562790C (en
Inventor
Radhakrishnan L. Nagarajan
Fred A. Kish, Jr.
David F. Welch
Drew D. Perkins
Masaki Kato
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Infinera Corp
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Individual
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12033—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for configuring the device, e.g. moveable element for wavelength tuning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12019—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
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    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/506—Multiwavelength transmitters
    • G—PHYSICS
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    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
    • G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
    • G02B6/29316—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide
    • G02B6/29317—Light guides of the optical fibre type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
    • G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
    • G02B6/29338—Loop resonators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
    • G02B6/2935—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means
    • G02B6/29352—Mach-Zehnder configuration, i.e. comprising separate splitting and combining means in a light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/29395—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device configurable, e.g. tunable or reconfigurable
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    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S5/02—Structural details or components not essential to laser action
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    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
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    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
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    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Abstract

A coolerless photonic integrated circuit (PIC), such as a semiconductor electro-absorption modulator/laser (EML) or a coolerless optical transmitter photonic integrated circuit (TxPIC), may be operated over a wide temperature range at temperatures higher then room temperature without the need for ambient cooling or hermetic packaging. Since there is large scale integration of N optical transmission signal WDM channels on a TxPIC chip, a new DWDM
system approach with novel sensing schemes and adaptive algorithms provides intelligent control of the PIC to optimize its performance and to allow optical transmitter and receiver modules in DWDM systems to operate uncooled.
Moreover, the wavelength grid of the on-chip channel laser sources may thermally float within a WDM wavelength band where the individual emission wavelengths of the laser sources are not fired to wavelength peaks along a standardized wavelength grid but rather may move about with changes in ambient temperature. However, control is maintained such that the channel spectral spacing between channels across multiple signal channels, whether such spacing is periodic or aperiodic, between adjacent laser sources in the thermally floating wavelength grid are maintained in a firmed relationship. Means are then provided at an optical receiver to discover and lock onto floating wavelength grid of transmitted WDM signals and thereafter demultiplex the transmitted WDM signals for OE conversion.

Claims (75)

1. A coolerless photonic integrated circuit (PIC) comprising:
a plurality of modulated sources providing a plurality of modulated channel signals each with a different operating wavelength together forming a wavelength grid of signal channels with spectral spacing provided between adjacent signal channels;
the channel signals combined to form a WDM signal for transmission on an optical link, the wavelength grid floating with changing temperature so that individual channel wavelengths change with temperature with the spectral spacing between adjacent signal channels of the wavelength grid remaining fixed relative to each another.
2. The coolerless photonic integrated circuit (PIC) of claim 1 wherein the floating grid is accomplished within a predetermined temperature range.
3. The coolerless photonic integrated circuit (PIC) of claim 2 wherein the temperature range is approximately between room temperature and a high temperature below 100°C.
4. The coolerless photonic integrated circuit (PIC) of claim 3 wherein the temperature range is between about 20°C and 85°C.
5. The coolerless photonic integrated circuit (PIC) of claim 1 wherein the spectral position of the floating wavelength grid of WDM signal is discovered and locked onto at an optical receiver after transmission of the WDM signal from the PIC.
6. The coolerless photonic integrated circuit (PIC) of claim 1 wherein the PIC
is a transmitter photonic integrated circuit (TxPIC) comprises a modulated source in each signal channel.
7. The coolerless photonic integrated circuit (PIC) of claim 6 wherein the TxPIC further comprises a power changing element (PCE) in each signal channel.
8. The coolerless photonic integrated circuit (PIC) of claim 6 wherein the TxPIC comprises a plurality of integrated semiconductor modulator/laser (SML).
9. The coolerless photonic integrated circuit (PIC) of claim 8 wherein the SML
comprises an electro-absorption modulator/laser (EAM).
10. The coolerless photonic integrated circuit (PIC) of claim 1 wherein there is no cooler to maintain the PIC at a given temperature.
11. The coolerless photonic integrated circuit (PIC) of claim 1 wherein the thermally floating wavelength grid is maintain at a temperature higher than room temperature.
12. The coolerless photonic integrated circuit (PIC) of claim 1 wherein the PIC is heated to and maintained at a set operating temperature.
13. The coolerless photonic integrated circuit (PIC) of claim 12 wherein the set operating temperature is above room temperature.
14. The coolerless photonic integrated circuit (PIC) of claim 13 wherein the set operating temperature is below about 85°C.
15. The coolerless photonic integrated circuit (PIC) of claim 1 wherein a laser in each of the modulated sources has an active region with an active region wavelength, the laser emission wavelength is detuned from a peak of the active region wavelength, the detuned offset from the peak being different for each laser.
16. The coolerless photonic integrated circuit (PIC) of claim 15 wherein said detuned offset is substantially a positive wavelength detuning.
17. The coolerless photonic integrated circuit (PIC) of claim 15 wherein a modulator in each of the modulated sources has its active region wavelength detuned from its corresponding laser emission wavelength.
18. The coolerless photonic integrated circuit (PIC) of claim 1 wherein the modulated sources in each signal channel comprises a laser and a modulator, the modulator active region wavelength is detuned from its laser emission wavelength.
19. A coolerless photonic integrated circuit (PIC) comprising at least one modulated source including a heater to heat the PIC to within a temperature range between room temperature and high operating temperature without deploying any cooler so that the PIC is thermally floating without any temperature control except that the heater maintains the PIC
temperature within the temperature range.
20. The coolerless photonic integrated circuit (PIC) of claim 19 wherein the modulated source has an active region having at one aluminum-containing layer.
21. The coolerless photonic integrated circuit (PIC) of claim 20 wherein the aluminum-containing layer comprises AIGaInAs (AQ).
22. The coolerless photonic integrated circuit (PIC) of claim 19 wherein the PIC is floating at a temperature higher then room temperature.
23. The coolerless photonic integrated circuit (PIC) of claim 19 wherein the PIC is heated to and maintain at a maximum operating temperature higher than room temperature.
24. The coolerless photonic integrated circuit (PIC) of claim 23 wherein a laser in the modulated source of the PIC is operated a constant temperature after the PIC operating temperature has been set at the maximum operating temperature.
25. The coolerless photonic integrated circuit (PIC) of claim 23 wherein the maximum operating temperature is in a range of about 30°C to about 85°C.
26. The coolerless photonic integrated circuit (PIC) of claim 19 wherein the PIC has one signal channel with a modulated source.
27. The coolerless photonic integrated circuit (PIC) of claim 19 wherein the PIC has a plurality of signal channels each with a modulated source forming a floating wavelength grid of signal channels.
28. The coolerless photonic integrated circuit (PIC) of claim 19 wherein the PIC comprises material from a Group III-V regime.
29. The coolerless photonic integrated circuit (PIC) of claim 28 wherein the regime is an InP-based regime.
30. The coolerless photonic integrated circuit (PIC) of claim 28 wherein the regime is a GaAs-based regime.
31. A monolithic transmitter photonic integrated circuit (TxPIC) not requiring a TEC or Peltier cooler for its operation comprising:

a plurality of modulated sources in the PIC forming N signal channels and a combiner coupled to receive N modulated signals from the modulated sources, a lasers source in each of said modulated sources having an operational emission wavelength and forming with other laser sources wavelength grid emission wavelengths;
the optical combiner having a passband wavelength grid;
at least one heater associated with the PIC to maintain the operation of the circuit at high operating temperature above room temperature; and feedback means for changing the emission wavelengths of the laser sources to have a fixed a periodic or aperiodic spectral spacing between adjacent laser sources of the modulated sources and for maintaining the laser wavelength grid in substantial alignment with the passband wavelength grid of the combiner and for optimizing the operation of the modulators with changes resulting from said grid alignment.
32. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 31 where said feedback means comprises a programmable logic controller (PLC).
33. A monolithic transmitter photonic integrated circuit (TxPIC) comprising:
a plurality of modulated sources in the circuit each providing a signal channel with a different emission wavelength from other signal channels, each modulated source also optically coupled in each channel to a photodetector for providing an output from each channel to a controller to determine the operational wavelength of one or more modulated sources;
means to heat one or more of said modulated sources to a high operating temperature above room temperature so that the TxPIC is operated without any cooler for the circuit;
the controller to change the operational wavelength of one or more modulated sources so that a spectral spacing between adjacent signal channels is maintained at a predetermined spacing.
34. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 33 wherein the heating means is a strip heater formed on said circuit.
35. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 33 wherein the predetermined spacing is periodic or aperiodic.
36. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 33 wherein the photodetectors sense changing emission wavelength conditions via the controller due to changing ambient temperature conditions of the circuit.
37. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 33 wherein a plurality of said modulated sources have said heating means.
38. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 33 wherein the optical combiner also has a heating means.
39. A coolerless photonic integrated circuit (PIC) comprising:
a plurality of modulated sources having an aluminum-containing active region forming a plurality signal channels on the PIC;
the modulated sources providing a plurality of modulated channel signals each with a different operating wavelength together forming a wavelength grid of signal channels with spectral spacing provided between adjacent signal channels;
the channel signals combined to form a WDM signal for transmission on an optical link, the PIC not temperature controlled so that the wavelength grid is thermally floating with changing ambient temperature resulting in individual channel wavelengths changing with temperature;
the spectral spacing between adjacent signal channels of the wavelength grid maintained fixed relative to each another.
40. The coolerless photonic integrated circuit (PIC) of claim 39 wherein each channel of the modulated sources comprises a laser source and an electro-optic modulator.
41. The coolerless photonic integrated circuit (PIC) of claim 40 wherein the laser source is a DFB laser or a DBR laser.
42. The coolerless photonic integrated circuit (PIC) of claim 40 wherein the electro-optic modulator is a Mach-Zehnder modulator or an electro-absorption modulator.
43. The coolerless photonic integrated circuit (PIC) of claim 40 wherein the Mach-Zehnder modulator is operated either at its bandedge or away from its bandedge.
44. The coolerless photonic integrated circuit (PIC) of claim 39 wherein the aluminum-containing active region is AIGaInAs (AQ).
45. The coolerless photonic integrated circuit (PIC) of claim 39 wherein the PIC is operated at a high temperature above room temperature.
46. The coolerless photonic integrated circuit (PIC) of claim 45 wherein the PIC has at least one heater to maintain the PIC at the high temperature.
47. The coolerless photonic integrated circuit (PIC) of claim 46 wherein the high temperature is the temperature range is from about 40°C to about 85°C.
48. The coolerless photonic integrated circuit (PIC) of claim 46 wherein the heater comprises a strip heater adjacent to at least one modulated source to maintain the ambient temperature of the modulated source at the high temperature.
49. The coolerless photonic integrated circuit (PIC) of claim 48 further comprising a power changing element (PCE) or photodetector formed in each signal channel.
50. The method of operating a photonic integrated circuit (PIC) having a plurality of signal channels with different emission wavelengths together forming a grid, with a predetermined signal channel spacing between the signal channels, comprising the steps of:
operating the circuit coolerless without any ambient temperature control; and permitting the channel wavelength grid to thermally float with changes in circuit ambient temperature while maintaining fixed the signal channel spectral spacing between adjacent channels.
51. The method of claim 50 wherein the spectral spacing between channels is periodic.
52. The method of claim 50 wherein the spectral spacing between channels is aperiodic.
53. The method of claim 50 comprising the further step of permitting the channel wavelength grid to thermally float at a temperature higher than room temperature.
54. The method of claim 53 wherein the higher temperature is in the temperature range of about 30°C to about 85°C.
55. The method of claim 50 comprising the further step of heating the PIC to a maximum operating temperature above room temperature.
56. The method of claim 55 wherein the maximum operating temperature is in the temperature range of about 30°C to about 85°C.
57. The method of claim 50 comprising the further step of forming the PIC with compounds from Group III-V materials.
58. The method of claim of claim 57 wherein the Group III-V materials are from the InP regime or the GaAs regime.
59. An optical transmission network comprising:
an uncooled and unheated optical transmitter that provides a plurality of signal channels with different emission wavelengths, with a maintained a fixed spectral spacing between adjacent signal channels and forming a grid of emission wavelengths where the wavelength grid and, correspondingly, the emission wavelengths, freely vary with changes in ambient temperature resulting in a thermally floating wavelength grid of signal channels;
means to combine the channel signals to form a WDM signal for transmission on an optical link;
an optical receiver to receive the WDM signal from the optical transmitter via the optical link;
the optical receiver having means for discovering and locking onto the thermally floating wavelength grid of signal channels based upon information received from the optical transmitter;
and means for decombining the lock-on WDM signal into the plurality of channel signals.
60. The optical transmission network of claim 59 wherein the maintained signal channel spectral spacing is periodic or aperiodic.
61. The optical transmission network of claim 59 wherein the optical transmitter comprises at least one transmitter photonic integrated circuit (TxPIC) chip.
62. The optical transmission network of claim 59 wherein the optical receiver comprises at least one receiver photonic integrated circuit (RxPIC) chip.
63. The optical transmission network of claim 59 wherein the optical transmitter further comprises a controller to continuously maintain the maintained signal channel spectral spacing.
64. The optical transmission network of claim 59 wherein the optical receiver further comprises a filter having a wavelength comb which is spectrally shifted to lock onto the thermally floating wavelength grid of the WDM signal.
65. The optical transmission network of claim 64 wherein the wavelength comb is spectrally shifted through heating means.
66. The optical transmission network of claim 64 wherein the wavelength comb is spectrally shifted through electro-optical means.
67. The optical transmission network of claim 59 wherein the thermally floating wavelength grid of signal channels is thermally floating at a temperature higher than room temperature.
68. The optical transmission network of claim 67 wherein the higher temperature is in the range of about 30°C to about 85°C.
69. The optical transmission network of claim 59 wherein the thermally floating wavelength grid of signal channels is heated to and maintained at a maximum operating temperature above room temperature.
70. The optical transmission network of claim 69 wherein the thermally floating wavelength grid of signal channels.
71. The optical transmission network of claim 70 wherein the higher temperature is in the range of about 30°C to about 85°C.
72. A photonic integrated circuit (PIC) comprising:
a source formed in the PIC from which at least one signal having a predetermined wavelength is provided at an output from the source along a waveguide in the circuit;
a plurality of photodetectors integrated in the circuit and formed in, formed adjacent to, or formed in approximate spaced relation to the waveguide;

said photodetectors either singularly or in a combination resolving the wavelength of the signal in the waveguide through differentiating means integrated in the circuit and in communication with the waveguide.
73. The photonic integrated circuit (PIC) of claim 72 wherein the source comprises a laser or combiner/decombiner.
74. The photonic integrated circuit (PIC) of claim 72 wherein the differentiating means comprises. at least one of a grating, phase shifter, absorber, asymmetric Mach-Zehnder interferometer, a split waveguide formed from the waveguide where one of the spilt waveguides is longer than the other split waveguide, a higher order Brillouin zone output from the source, a ring oscillator, an Echelle grating or an multimode interference coupler with at least one offset input and output.
75. The photonic integrated circuit (PIC) of claim 74 wherein the source comprises a laser or combiner/decombiner.
CA2562790A 2004-04-15 2005-04-14 Coolerless and floating wavelength grid photonic integrated circuits (pics) for wdm transmission networks Expired - Fee Related CA2562790C (en)

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