CN100367468C - 用于指示膜层变化的宽频带光学终点检测系统与方法 - Google Patents
用于指示膜层变化的宽频带光学终点检测系统与方法 Download PDFInfo
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- CN100367468C CN100367468C CNB038074222A CN03807422A CN100367468C CN 100367468 C CN100367468 C CN 100367468C CN B038074222 A CNB038074222 A CN B038074222A CN 03807422 A CN03807422 A CN 03807422A CN 100367468 C CN100367468 C CN 100367468C
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- 230000008859 change Effects 0.000 title claims description 38
- 238000001514 detection method Methods 0.000 title claims description 36
- 230000003287 optical effect Effects 0.000 title claims description 19
- 238000001228 spectrum Methods 0.000 claims abstract description 65
- 230000003595 spectral effect Effects 0.000 claims description 30
- 238000005498 polishing Methods 0.000 claims description 25
- 238000000985 reflectance spectrum Methods 0.000 claims description 15
- 238000007517 polishing process Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 34
- 229910052802 copper Inorganic materials 0.000 description 34
- 239000010949 copper Substances 0.000 description 34
- 230000008569 process Effects 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 27
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/112,425 US6806948B2 (en) | 2002-03-29 | 2002-03-29 | System and method of broad band optical end point detection for film change indication |
US10/112,425 | 2002-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1643662A CN1643662A (zh) | 2005-07-20 |
CN100367468C true CN100367468C (zh) | 2008-02-06 |
Family
ID=28453326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038074222A Expired - Lifetime CN100367468C (zh) | 2002-03-29 | 2003-03-26 | 用于指示膜层变化的宽频带光学终点检测系统与方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6806948B2 (zh) |
EP (1) | EP1490898A4 (zh) |
JP (1) | JP4789415B2 (zh) |
KR (1) | KR100971836B1 (zh) |
CN (1) | CN100367468C (zh) |
AU (1) | AU2003220583A1 (zh) |
TW (1) | TW588154B (zh) |
WO (1) | WO2003083522A2 (zh) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
TWI335632B (en) * | 2003-09-19 | 2011-01-01 | Applied Materials Inc | Apparatus and method of detecting the electroless deposition endpoint |
US20060062897A1 (en) * | 2004-09-17 | 2006-03-23 | Applied Materials, Inc | Patterned wafer thickness detection system |
US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
US7226339B2 (en) * | 2005-08-22 | 2007-06-05 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
JP5534672B2 (ja) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
US7409260B2 (en) * | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
US7406394B2 (en) * | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
US20080099436A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US20080176149A1 (en) * | 2006-10-30 | 2008-07-24 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US20080099435A1 (en) * | 2006-10-30 | 2008-05-01 | Michael Grimbergen | Endpoint detection for photomask etching |
US7998358B2 (en) | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
KR101504508B1 (ko) | 2007-02-23 | 2015-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
US7840375B2 (en) * | 2007-04-02 | 2010-11-23 | Applied Materials, Inc. | Methods and apparatus for generating a library of spectra |
CN101458445B (zh) * | 2007-12-11 | 2012-04-25 | 中芯国际集成电路制造(上海)有限公司 | 一种用于探测刻蚀终点的装置及方法 |
US7879732B2 (en) * | 2007-12-18 | 2011-02-01 | Chartered Semiconductor Manufacturing Ltd. | Thin film etching method and semiconductor device fabrication using same |
US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
US20100041316A1 (en) * | 2008-08-14 | 2010-02-18 | Yulin Wang | Method for an improved chemical mechanical polishing system |
KR101944325B1 (ko) | 2008-09-04 | 2019-01-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 |
US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
KR101616024B1 (ko) * | 2008-10-27 | 2016-04-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 동안에 기판의 분광 사진 모니터링에 있어서의 적합도 |
US8352061B2 (en) | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
CN101954621B (zh) * | 2009-07-16 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨制程的研磨终点判断方法 |
CN102483320B (zh) * | 2009-10-13 | 2014-04-02 | 浜松光子学株式会社 | 膜厚测定装置及膜厚测定方法 |
WO2011056485A2 (en) | 2009-11-03 | 2011-05-12 | Applied Materials, Inc. | Endpoint method using peak location of spectra contour plots versus time |
JP5612945B2 (ja) * | 2010-07-23 | 2014-10-22 | 株式会社荏原製作所 | 基板の研磨の進捗を監視する方法および研磨装置 |
US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
WO2012051121A2 (en) * | 2010-10-15 | 2012-04-19 | Applied Materials, Inc. | Building a library of spectra for optical monitoring |
WO2012054263A2 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Multiple matching reference spectra for in-situ optical monitoring |
JP5853382B2 (ja) * | 2011-03-11 | 2016-02-09 | ソニー株式会社 | 半導体装置の製造方法、及び電子機器の製造方法 |
KR101877468B1 (ko) | 2011-12-29 | 2018-07-12 | 삼성전자주식회사 | 광원 장치 및 광 생성 방법 |
US9221147B2 (en) | 2012-10-23 | 2015-12-29 | Applied Materials, Inc. | Endpointing with selective spectral monitoring |
US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
US20140224425A1 (en) * | 2013-02-13 | 2014-08-14 | Kabushiki Kaisha Toshiba | Film thickness monitoring method, film thickness monitoring device, and semiconductor manufacturing apparatus |
US10012494B2 (en) | 2013-10-25 | 2018-07-03 | Applied Materials, Inc. | Grouping spectral data from polishing substrates |
CN105336641B (zh) * | 2014-06-20 | 2018-02-02 | 中芯国际集成电路制造(上海)有限公司 | Cmp终点探测系统的加权校准方法 |
JP6623685B2 (ja) * | 2015-10-29 | 2019-12-25 | セイコーエプソン株式会社 | 測定装置及び印刷装置 |
JP7023063B2 (ja) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
CN107617970A (zh) * | 2017-10-26 | 2018-01-23 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种晶圆抛光终点的检测系统 |
JP7068831B2 (ja) * | 2018-01-18 | 2022-05-17 | 株式会社荏原製作所 | 研磨装置 |
TWI704093B (zh) * | 2019-05-09 | 2020-09-11 | 辛耘企業股份有限公司 | 處理液容置裝置 |
JP7389718B2 (ja) | 2020-06-29 | 2023-11-30 | 株式会社荏原製作所 | 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077452A (en) * | 1992-09-17 | 2000-06-20 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
CN1261725A (zh) * | 1998-12-03 | 2000-08-02 | 西门子公司 | 铝/铜金属连线上反应离子蚀刻后聚合物的清除方法 |
US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2677473B1 (fr) * | 1991-06-05 | 1995-04-07 | Telemecanique | Procede et bus d'arbitrage pour transmission de donnees serie. |
US5271274A (en) * | 1991-08-14 | 1993-12-21 | The Board Of Trustees Of The Leland Stanford Junior University | Thin film process monitoring techniques using acoustic waves |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5904609A (en) | 1995-04-26 | 1999-05-18 | Fujitsu Limited | Polishing apparatus and polishing method |
JP3183259B2 (ja) * | 1998-06-03 | 2001-07-09 | 日本電気株式会社 | 半導体ウェハ研磨状態モニタリング装置及び研磨終了点検出方法 |
US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
US6186865B1 (en) * | 1998-10-29 | 2001-02-13 | Lam Research Corporation | Apparatus and method for performing end point detection on a linear planarization tool |
JP3800942B2 (ja) * | 2000-04-26 | 2006-07-26 | 日本電気株式会社 | 半導体ウェハの研磨終了点検出装置及びその方法 |
CN1466676A (zh) * | 2000-07-31 | 2004-01-07 | Asml美国公司 | 在化学机械抛光中用于终点探测的现场方法和设备 |
US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
-
2002
- 2002-03-29 US US10/112,425 patent/US6806948B2/en not_active Expired - Fee Related
-
2003
- 2003-03-26 JP JP2003580901A patent/JP4789415B2/ja not_active Expired - Lifetime
- 2003-03-26 CN CNB038074222A patent/CN100367468C/zh not_active Expired - Lifetime
- 2003-03-26 AU AU2003220583A patent/AU2003220583A1/en not_active Abandoned
- 2003-03-26 EP EP03716897A patent/EP1490898A4/en not_active Withdrawn
- 2003-03-26 KR KR1020047015393A patent/KR100971836B1/ko active IP Right Grant
- 2003-03-26 WO PCT/US2003/009666 patent/WO2003083522A2/en active Application Filing
- 2003-03-28 TW TW092107218A patent/TW588154B/zh not_active IP Right Cessation
- 2003-11-24 US US10/721,136 patent/US7099013B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077452A (en) * | 1992-09-17 | 2000-06-20 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
CN1261725A (zh) * | 1998-12-03 | 2000-08-02 | 西门子公司 | 铝/铜金属连线上反应离子蚀刻后聚合物的清除方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4789415B2 (ja) | 2011-10-12 |
US7099013B2 (en) | 2006-08-29 |
US20030184732A1 (en) | 2003-10-02 |
WO2003083522A2 (en) | 2003-10-09 |
EP1490898A2 (en) | 2004-12-29 |
KR100971836B1 (ko) | 2010-07-22 |
AU2003220583A8 (en) | 2003-10-13 |
US6806948B2 (en) | 2004-10-19 |
TW200401102A (en) | 2004-01-16 |
EP1490898A4 (en) | 2005-06-15 |
CN1643662A (zh) | 2005-07-20 |
JP2005522025A (ja) | 2005-07-21 |
TW588154B (en) | 2004-05-21 |
AU2003220583A1 (en) | 2003-10-13 |
US20040165177A1 (en) | 2004-08-26 |
KR20040095340A (ko) | 2004-11-12 |
WO2003083522A3 (en) | 2003-12-04 |
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