CN100391025C - Organic light-emitting diode having a breaker construction and method for making same - Google Patents
Organic light-emitting diode having a breaker construction and method for making same Download PDFInfo
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- CN100391025C CN100391025C CNB031020445A CN03102044A CN100391025C CN 100391025 C CN100391025 C CN 100391025C CN B031020445 A CNB031020445 A CN B031020445A CN 03102044 A CN03102044 A CN 03102044A CN 100391025 C CN100391025 C CN 100391025C
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Abstract
The present invention discloses an organic luminous diode with a buffer layer structure and a making method thereof. Firstly, a positive electrode is formed on a baseplate; secondly, an organic luminous layer, an electron injecting cathode layer and a cathode buffer layer are orderly formed; finally, a transparent cathode is formed on the cathode buffer layer. The cathode buffer layer is made of a metal material so as to effectively protect the organic luminous layer when the transparent cathode is formed.
Description
Technical field
The present invention relates to a kind of Organic Light Emitting Diode, Organic Light Emitting Diode of particularly a kind of tool buffer layer structure and preparation method thereof.
Background technology
Display of organic electroluminescence (Organic Electroluminescence Display, OLED, OrganicEL Display) is called Organic Light Emitting Diode (Organic Light Emitting Diode again; OLED) display because have high brightness, the screen reaction speed is fast.Compact, full-color, no subtense angle, do not need LCD formula backlight and save the lamp source and power consumption, therefore can take the lead in replacing twisted-nematic (Twist Nematic; TN) with supertwist to row (Super Twist Nematic; STN) market of LCD, and further replace small size membrane transistor LCD, and become the display material that portable information product of new generation, mobile phone, personal digital processor and portable computer generally use.
Please refer to shown in Figure 1, the basic structure of Organic Light Emitting Diode is (way that also has is transparent conductive anode to be plated on the reflexive substrate of opaque tool) on the substrate 10 that is coated with metal anode 12, plate organic material 14 more in regular turn, comprise hole injection layer (hole-injecting layer, HIL), hole transmission layer (hole-transporting layer, HTL), luminescent layer (emitting layer, EML) and electron transfer layer (electron-transporting layer, ETL), then plate transparent cathode 16 again.Usually metal anode 12 be opaque and the tool reflectivity, and when applied voltage makes element luminous, light radiates via transparent cathode 16, and this kind mode is called top light emitting (top emission); If as shown in Figure 2, anode that uses in the element and negative electrode are the electrically conducting transparent material, then are called transparent Organic Light Emitting Diode (transparent OLED).
In two kinds of above-mentioned luminous patterns, transparent cathode all can be formed on the top of luminous organic material, and general transparent conductive material is as indium tin oxide (Indium Tin Oxide, ITO), indium-zinc oxide (IndiumZinc Oxide, IZO), be to use high-octane coating method that metal oxide is plated on the organic layer, wherein sputtering method has advantages such as large tracts of land film forming, good film thickness uniformity and reproducibility, and is applied to the film technique of volume production.But, this kind high-energy coating method damages organic layer easily, thus can use one deck resilient coating traditionally, as: CuPc prevents the damage of high-energy plated film to organic layer.And CuPc is an organic material, does not have conductivity, may increase the driving voltage of element.In view of this, the present invention proposes different resilient coating materials, not only can prevent the damage of high-energy plated film to organic layer, also can not increase the driving voltage of element.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of Organic Light Emitting Diode of tool buffer layer structure.
Another object of the present invention provides a kind of manufacture method of Organic Light Emitting Diode, and wherein the cathode buffer layer structure has preferable conductivity, makes in protection organic luminous layer structure, does not influence the luminous efficiency of organic LED structure.
For achieving the above object, the present invention relates to a kind of manufacture method of Organic Light Emitting Diode, this method comprises the following step at least:
Form an anode electrode on a substrate;
Form an organic luminous layer on this anode electrode;
Form an electronics and inject cathode layer on this organic luminous layer;
Forming a cathode buffer layer injects on the cathode layer, in order to protect this organic luminous layer at this electronics; And
Form a transparent cathode on this cathode buffer layer;
Wherein, this cathode buffer layer is to use metal material to make, so that protect this organic luminous layer when this transparent cathode of above-mentioned formation.
Above-mentioned cathode buffer layer is to select for use atomic number more than or equal to 20 metallic element.
Above-mentioned cathode buffer layer is select nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold for use wherein a kind of.
A kind of manufacture method of Organic Light Emitting Diode, this method comprises the following step at least:
Form an anode electrode on a substrate;
Form an organic luminous layer on this anode electrode;
Form an electronics and inject cathode layer on this organic luminous layer;
Forming a cathode buffer layer injects on the cathode layer, in order to protect this organic luminous layer at this electronics; And
Carry out the sputter program to form a transparent cathode on this cathode buffer layer;
Wherein, the material of this cathode buffer layer is to select for use atomic number more than or equal to 20 metallic element, so that the energy that in above-mentioned sputter program, produces in the absorption process, to protect this organic luminous layer.
Above-mentioned cathode buffer layer is select nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold for use wherein a kind of.
A kind of structure of Organic Light Emitting Diode, this structure comprises at least:
One substrate;
One anode electrode is to be formed on this substrate;
One organic luminous layer is to be formed on this anode electrode;
One electronics injects cathode layer, is to be formed on this organic luminous layer;
One cathode buffer layer is to be formed at this electronics to inject on the cathode layer, in order to protect this organic luminous layer; And
One transparent cathode is to be formed on this cathode buffer layer;
Wherein, this cathode buffer layer is to use metal material to make, so that protect this organic luminous layer when this transparent cathode of above-mentioned formation.
This organic LED structure more comprises a reflective metal layer, is formed on this transparent cathode.
Above-mentioned cathode buffer layer is to select for use atomic number more than or equal to 20 metallic element.
Above-mentioned cathode buffer layer is select nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold for use wherein a kind of.
Above-mentioned anode electrode is select electrically conducting transparent material, metal material for use wherein a kind of.
Design of the present invention has following advantage:
(1) cathode buffer layer structure of the present invention is a metal material, has preferable conductivity, makes in protection organic luminous layer structure, does not increase the driving voltage of organic light-emitting diode element.
(2) the cathode buffer layer structure of the present invention metal level that is minimal thickness makes in protection organic luminous layer structure, does not influence the luminous efficiency of organic light-emitting diode element.
Description of drawings
Fig. 1 is the organic light-emitting diode element basic block diagram of top light emitting (top emission);
Fig. 2 is the basic block diagram of transparent Organic Light Emitting Diode (transparent OLED);
Fig. 3 is the basic block diagram according to the first embodiment of the invention Organic Light Emitting Diode;
Fig. 4 is the basic block diagram according to the second embodiment of the invention Organic Light Emitting Diode.
Execution mode
The present invention is the manufacture method with Organic Light Emitting Diode of cathode buffer layer.In order to make narration of the present invention more detailed and complete, can and cooperate that Fig. 3 and Fig. 4's is graphic with reference to following description.Relevant of the present invention be described in detail as follows described.
Seeing also Fig. 3, is according to first embodiment of the invention, the Organic Light Emitting Diode of a kind of tool cathode buffer layer structure that is provided.At first, form anode electrode 32 on substrate 30.This optional self-induced transparency of substrate 30 materials or opaque but have reflexive material, and anode electrode 32 also can be selected transparent conductive material or metal material.The material of above-mentioned transparency conductive electrode can be selected from indium tin oxide (Indium Tin Oxide, ITO), indium-zinc oxide (1ndium Zinc Oxide, material such as IZO), and make with sputtering method, if metal material, can select the preferable magnesium of conductivity, lithium metal or alloy, and be made on the substrate 30 with evaporation or sputtering way.
Then, form organic luminous layer 34 on this anode electrode 32.Above-mentioned organic luminous layer 34 materials can use Alq, NPB, CuPc, C545T, DCJTB, CBP, BAlq, Ir (ppy)
3Deng fluorescent or phosphorescence pigment or misfit thing material, methods such as the vacuum vapour deposition that heats with vacuum vapour deposition, electron beam, ionization vapour deposition method, organic molecular line vapour deposition method, Plasma Polymerization, vacuum evaporation polymerization, immersion lining method, rotation lining method, Langmuir-Blodgett (LB) membrane process, So1-Gel method, electrolysis polymerization method form organic luminous layers 34 on anode electrode 32 again.Subsequently, form electronics and inject cathode layer 36 on organic luminous layer 34.The material that injects negative electrode as electronics has preferable material of selection conductivity such as alkali metal as electrode, but it is non-persistent in essence, so, it generally is the relatively more stable material of sputter or evaporation, as: lithium fluoride (LiF) metallic compound, the evaporation molybdenum is arranged in pairs or groups with it and can effectively be reduced driving voltage value again, and thickness must enough thin just have certain light transmission, and (about 0.5～5nm) gets final product the approximate number atomic layers thick.In addition, magnesium silver (Mg-Ag), aluminium lithium (Al-Li) alloy material also have same effect.
Then, forming cathode buffer layer 38 injects on the cathode layer 36 in electronics.At last, form transparent cathode 40 again on above-mentioned cathode buffer layer 38, promptly finish the structure of an organic light-emitting diode element.Above-mentioned cathode buffer layer 38 is in order to when forming transparent cathode 40, and the electronics of protection lower floor injects cathode layer 36 and organic luminous layer 34.And the material of transparent cathode 40 is selected as: indium tin oxide (ITO), indium-zinc oxide (IZO), be to use high-octane coating method that metal oxide is plated on the organic layer, wherein sputtering method has advantages such as large tracts of land film forming, good film thickness uniformity and reproducibility, and is applied to the film technique of volume production.But because high-octane forming sputtering film might undermine organic luminous layer 34, and then influence luminous efficiency, satisfying needs this resilient coating of adding to absorb most energy.
Because cathode buffer layer 38 also belongs to one deck of organic light-emitting diode element structure, its conductivity and light transmission all directly have influence on the luminous efficiency of element.Therefore; cathode buffer layer 38 is if select the not good material of conductivity for use; though can reach the effect of protection understructure; but may therefore increase the driving voltage of element; 38 of cathode buffer layers of the present invention select for use atomic number to make more than or equal to 20 metallic element; as nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold etc., be formed at electronics with the methods such as wireless plating technology of vacuum vapour deposition, ionization vapour deposition method or the wet type of the resistance heating of dry type or electron beam heating and inject on the cathode layer 36.In addition, in order to take into account light transmission, above-mentioned cathode buffer layer 38 has the thickness of about 5-30nm, and the thickness of only counting atomic layers thick still has the light transmission of certain degree, does not influence the luminous efficiency of element.
By the selection of aforesaid substrate 30 and anode electrode 32 different attribute materials, will make the illumination mode of organic light-emitting diode element that different results be arranged.When the material of substrate 30 and anode electrode 32 is all selected transparent attribute, component structure will be transparent Organic Light Emitting Diode (transparent OLED), and just the light of Chan Shenging can be sent by the top or the bottom of substrate 30; If one of them selects the reflexive material of opaque tool substrate 30 and anode electrode 32, component structure will be the pattern of top light emitting (top emission).
Seeing also Fig. 4, is according to second embodiment of the invention, a kind of Organic Light Emitting Diode of tool cathode buffer layer structure.The manufacture method of second embodiment and above-mentioned first embodiment is similar, at first on transparency carrier 50, form transparent anode 52, organic luminous layer 54, electronics injection cathode layer 56, cathode buffer layer 58, transparent cathode 60 in regular turn, evaporation or sputter one reflective metal layer 62 are promptly finished the structure of an organic light-emitting diode element on transparent cathode 60 more at last.Above-mentioned reflective metal layer 62 can select the preferable silver of conductivity, magnesium, molybdenum or alloy on transparent cathode 60, as the luminous structure of reflecting element, makes the illumination mode of element become the mode of bottom-emission (bottom emission).
Above-mentioned cathode buffer layer 58 is in order to when forming transparent cathode 60, and the electronics of protection lower floor injects cathode layer 56 and organic luminous layer 54.Because high-octane forming sputtering film might undermine organic luminous layer 54, and then influence luminous efficiency, also need to add this resilient coating and absorb most energy.Under the prerequisite of considering element conductivity and light transmission, 58 of cathode buffer layers of the present invention select for use atomic number to make more than or equal to 20 metallic element, as nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold etc., be formed at electronics with the methods such as wireless plating technology of vacuum vapour deposition, ionization vapour deposition method or the wet type of the resistance heating of dry type or electron beam heating and inject on the cathode layer 56.In addition, above-mentioned cathode buffer layer 58 has the thickness of about 5-30nm, only counts the light transmission that the thickness of atomic layers thick is still possessed certain degree.
Design of the present invention has following advantage:
(1) cathode buffer layer structure of the present invention is a metal material, has preferable conductivity, makes in protection organic luminous layer structure, does not increase the driving voltage of organic light-emitting diode element.
(2) the cathode buffer layer structure of the present invention metal level that is minimal thickness makes in protection organic luminous layer structure, does not influence the luminous efficiency of organic light-emitting diode element.
(3) cathode buffer layer structure of the present invention is common metal coating processing procedure, does not increase the degree of difficulty on the processing procedure.
Though the present invention illustrates as above with preferred embodiments, it is not only to terminate in the foregoing description in order to limit the present invention's spirit with the invention entity.Therefore, the modification of being done in not breaking away from spirit of the present invention and scope all should be included in the claim scope.
Claims (7)
1. the manufacture method of an Organic Light Emitting Diode is characterized in that this method comprises the following step at least:
Form an anode electrode on a substrate;
Form an organic luminous layer on this anode electrode;
Form an electronics and inject cathode layer on this organic luminous layer;
Forming a cathode buffer layer injects on the cathode layer, in order to protect this organic luminous layer at this electronics; And
Form a transparent cathode on this cathode buffer layer;
Wherein, this cathode buffer layer is to use metal material to make, so that protect this organic luminous layer when this transparent cathode of above-mentioned formation.
2. method according to claim 1 is characterized in that above-mentioned cathode buffer layer is select nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold for use wherein a kind of.
3. the manufacture method of an Organic Light Emitting Diode is characterized in that this method inclusion the following step at least:
Form an anode electrode on a substrate;
Form an organic luminous layer on this anode electrode;
Form an electronics and inject cathode layer on this organic luminous layer;
Forming a cathode buffer layer injects on the cathode layer, in order to protect this organic luminous layer at this electronics; And
Carry out the sputter program to form a transparent cathode on this cathode buffer layer;
Wherein, the material of this cathode buffer layer is select nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold for use wherein a kind of, so that the energy that in above-mentioned sputter program, produces in the absorption process, to protect this organic luminous layer.
4. the structure of an Organic Light Emitting Diode is characterized in that this structure comprises at least:
One substrate;
One anode electrode is to be formed on this substrate;
One organic luminous layer is to be formed on this anode electrode;
One electronics injects cathode layer, is to be formed on this organic luminous layer;
One cathode buffer layer is to be formed at this electronics to inject on the cathode layer, in order to protect this organic luminous layer; And
One transparent cathode is to be formed on this cathode buffer layer;
Wherein, this cathode buffer layer is to use metal material to make, so that protect this organic luminous layer when this transparent cathode of above-mentioned formation.
5. organic LED structure according to claim 4 is characterized in that more comprising a reflective metal layer, is formed on this transparent cathode.
6. organic LED structure according to claim 4 is characterized in that above-mentioned cathode buffer layer is select nickel, copper, molybdenum, silver, palladium, platinum, chromium, gold for use wherein a kind of.
7. organic LED structure according to claim 4 is characterized in that above-mentioned anode electrode is select electrically conducting transparent material, metal material for use wherein a kind of.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB031020445A CN100391025C (en) | 2003-01-27 | 2003-01-27 | Organic light-emitting diode having a breaker construction and method for making same |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB031020445A CN100391025C (en) | 2003-01-27 | 2003-01-27 | Organic light-emitting diode having a breaker construction and method for making same |
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| CN100391025C true CN100391025C (en) | 2008-05-28 |
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Families Citing this family (3)
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| CN103000818B (en) * | 2012-12-11 | 2015-05-20 | 京东方科技集团股份有限公司 | Top-emitting organic light-emitting device (OLED) and preparation method and application thereof |
| CN103000660B (en) * | 2012-12-12 | 2015-07-15 | 京东方科技集团股份有限公司 | Array substrate and white organic light-emitting diode display device |
| CN104183713A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Top-emission organic light emission diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11260546A (en) * | 1998-03-09 | 1999-09-24 | Tdk Corp | Organic el element |
| US6172459B1 (en) * | 1998-07-28 | 2001-01-09 | Eastman Kodak Company | Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer |
| US6339290B1 (en) * | 1998-08-21 | 2002-01-15 | Tdk Corporation | Organic electroluminescent device and making method |
| JP2002313582A (en) * | 2001-04-17 | 2002-10-25 | Matsushita Electric Ind Co Ltd | Light emitting element and display device |
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2003
- 2003-01-27 CN CNB031020445A patent/CN100391025C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11260546A (en) * | 1998-03-09 | 1999-09-24 | Tdk Corp | Organic el element |
| US6172459B1 (en) * | 1998-07-28 | 2001-01-09 | Eastman Kodak Company | Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer |
| US6339290B1 (en) * | 1998-08-21 | 2002-01-15 | Tdk Corporation | Organic electroluminescent device and making method |
| JP2002313582A (en) * | 2001-04-17 | 2002-10-25 | Matsushita Electric Ind Co Ltd | Light emitting element and display device |
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