CN100395900C - Luminous element with porous luminous layer - Google Patents
Luminous element with porous luminous layer Download PDFInfo
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- CN100395900C CN100395900C CNB200410096084XA CN200410096084A CN100395900C CN 100395900 C CN100395900 C CN 100395900C CN B200410096084X A CNB200410096084X A CN B200410096084XA CN 200410096084 A CN200410096084 A CN 200410096084A CN 100395900 C CN100395900 C CN 100395900C
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- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical group [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
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Abstract
The present invention relates to a luminous element with a porous luminous layer, which comprises a base plate, a first and a second conductive coating layers and at least one porous luminous layer, wherein the porous luminous layer is formed between the first conductive coating layer and the second conductive coating layer, and the porous luminous layer has an upper blocking layer, a lower blocking layer and a load limiting layer; the load limiting layer which is arranged between the upper and the lower blocking layer has a mountain-shaped structure which is provided with a plurality of valley-shaped structures, the load limiting layer is made of nitride with indium, and the energy barrier thereof is an energy barrier which is smaller than the upper blocking layer and the lower blocking layer. The drive voltage of the luminous element of the present invention can be reduced greatly to obtain an optimized crystal structure and improve the antistatic capability and the reliability of the element. The luminous element of the present invention can grow a plurality of porous luminous layers with different wavelengths, effectively raise the performance of the luminous element and realize a single-wafer mixed optical element, and simultaneously, the present invention has the advantages of high luminous efficiency, high reliability, high mixed light modulating property and low cost.
Description
Technical field
The present invention relates to a kind of light-emitting component, in particular to a kind of light-emitting component with porous luminous layer.
Background technology
Price along with light-emitting diode is more and more cheap in recent years, variously utilize that light-emitting diode is compact, the application product of power saving, colouring characteristic is more and more general, decorates auxiliary backlight, automobile instrument version, public place decorative lamp, various indoor indicator light, shop sign advertising lamp etc. as various electronic instruments.Look forward to the future, utilizing the solid luminescent diode to replace all existing light-emitting components has not been dream.
Look back the developing history of light-emitting diode, its luminous layer structure the earliest is simple P, N combination, but because electronics, the compound probability in electric hole is not high, so efficient is not good enough.After people know that (Quantum engineering) or band gap (the Energy band Gap) engineering of how utilizing the quantum engineering is made the quantum well structures luminous layer structure with heterogeneous interface, the luminous efficiency of light-emitting diode thereby improved significantly.
With reference to shown in Figure 1, conventional quantum trap luminous layer 10 has a quantum well structures 12, one first barrier layer 11 and one second barrier layer (scheming not shown).This first barrier layer 11 is under this quantum well structures 12; This second barrier layer is on this quantum well structures 12.Quantum trap luminous layer 10 is had greatly by two-layer up and down that energy barrier material (first barrier layer 11 and second barrier layer) is comprised for the low energy barrier material (quantum well structures 12) that utilizes the growth limited thickness.With the energy barrier angle, this structure can provide the carrier limitation in space once, therefore can effectively carrier be limited to (trap) in the quantum well structures of this low energy barrier.
Though but its shortcoming most carrier can be caught and then is confined to and can't jump out in the well for this quantum well, this carrier still has bidimensional carrier mobility, therefore causes the quantum well performance to be restricted.Can't further reduce comprising driving voltage, antistatic effect can't effectively promote, and luminous efficiency is subject to the limited shortcomings such as carrier combined efficiency of quantum well.Though the light-emitting diode development has been very business-like product so far in addition, being seen light-emitting diode still is confined to the characteristic of single-chip list wavelength on the market.
Therefore, be necessary to provide the light-emitting component of a kind of innovation and tool progressive, to address the above problem.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting component of tool porous luminous layer, it comprises: substrate, one deck first conductivity coating layer, one deck second conductivity coating layer reach one deck porous luminous layer at least.This porous luminous layer is formed between this first conductivity coating layer and this second conductivity coating layer, this porous luminous layer has barrier layer on, barrier layer and carrier limitation layer once, this carrier limitation layer is in this on the barrier layer and descends between the barrier layer, this carrier limitation layer has a plurality of chevron structures, these a plurality of chevron structures define a plurality of mountain valleys shape structure, this carrier limitation layer is for containing the nitride structure of indium, and the energy barrier of this carrier limitation layer is less than the energy barrier on barrier layer on this and this time barrier layer.
Another object of the present invention is to provide a kind of light-emitting component of tool porous luminous layer, it comprises: a substrate; One deck N type conductivity coating layer; One deck P-type conduction coating layer; And one deck first wavelength porous property luminescent layer and one deck second wavelength porous property luminescent layer at least at least, they are formed between this N type conductivity coating layer and this P-type conduction coating layer, this first wavelength is different with this second wavelength, this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer have barrier layer on respectively, once a barrier layer and a carrier limit to layer, this carrier limitation layer is in this on the barrier layer and descends between the barrier layer, this carrier limitation layer has a plurality of chevron structures, these a plurality of chevron structures define a plurality of mountain valleys shape structure, this carrier limitation layer is for containing the nitride structure of indium, and the energy barrier of this carrier limitation layer is less than the energy barrier on barrier layer on this and this time barrier layer.
Utilize light-emitting component of the present invention, its element drives voltage can decline to a great extent, therefore can utilize this luminous layer structure to decrease in the doping content in the luminescent layer and do not influence driving voltage, and then can obtain preferably crystal structure and then improve antistatic effect and the element reliability.Moreover, can the grow up plural layer porous luminous layer of different wave length of light-emitting component of the present invention, with the performance of effective lifting light-emitting component, more can realize single-chip mixed light element, have characteristics such as light efficiency benefit occurred frequently, high-reliability, high mixed light modularity and low cost simultaneously.And porous luminous layer structure of the present invention can overcome the shortcoming that light-emitting component on the routine techniques only can luminous single wavelength, light-emitting component of the present invention can realize with the luminescent layer of the luminous frequency spectrum of difference in conjunction with and produce efficient, the element of high resiliency mixed light ratio.
Description of drawings
Fig. 1 is the structural representation of conventional quantum well luminescent layer;
Fig. 2 is the structural upright schematic diagram of porous luminous layer of the present invention;
Fig. 3 is the structural profile schematic diagram of porous luminous layer of the present invention;
Fig. 4 is the structural representation of first embodiment of the invention light-emitting component;
Fig. 5 is the structural representation of second embodiment of the invention light-emitting component;
Fig. 6 is the luminous intensity and the frequency spectrum profile of the light-emitting component of second embodiment of the invention;
Fig. 7 is the structural representation of third embodiment of the invention light-emitting component;
Fig. 8 is the luminous intensity and the frequency spectrum profile of the light-emitting component of third embodiment of the invention;
Fig. 9 is the structural representation of fourth embodiment of the invention light-emitting component; And
Figure 10 is the luminous intensity and the frequency spectrum profile of the light-emitting component of fourth embodiment of the invention.
Embodiment
By discovering that utilizing conventional quantum well planar structure can't further improve PN junction closes characteristic.Therefore, the present invention develops the luminescent layer with cellular structure and improves the light-emitting diode characteristic.This idea is that hope utilizes creation one to be different from the quantum trap luminous layer of conventional planar continuous structure, makes it change into one and has the next characteristic with the improvement light-emitting component of porous luminous layer structure.
With reference to figure 2 and shown in Figure 3, a porous luminous layer structure 30 comprises carrier limitation layer 31, barrier layer (scheming not shown) on the barrier layer 32 and once.This time barrier layer 32 is under this carrier limitation layer 31; Should go up the barrier layer on this carrier limitation layer 31.Wherein, this time barrier layer 32 is the material of the big energy barrier of tool, as gallium nitride (GaN), and this carrier limitation layer 31 of on this time barrier layer 32, growing up, this carrier limitation layer 31 is the material (energy barrier than this time barrier layer 32 is low) of the low energy barrier of tool, as InGaN (InGaN).Utilize control growth temperature simultaneously, partial pressure etc. make this carrier limitation layer 31 have a plurality of chevron structures 311,312,313 etc., and these chevron structures 311,312,313 define a plurality of mountain valleys shape structure 331,332 etc.For example: mountain valley shape structure 331 is between the two chevron structures 311,312 at least.These mountain valley shape structures 331,332 be shaped as porous shape structure, after forming the porousness kenel of a plurality of mountain valleys shape structure of this carrier limitation layer 31, further growing up upward again, the barrier layer coats this carrier limitation layer 31, should go up the material that the barrier layer is the big energy barrier of tool (energy barrier than this carrier limitation layer 31 is big), as gallium nitride (GaN).
With reference to shown in Figure 3, it shows the generalized section of porous luminous layer 30 of the present invention.Mountain valley of the present invention shape structure, its bottom and this time barrier layer 32 between distance must for more than or equal to 0 to being less than or equal to 20 * 10
-10Between the rice, that is, the H1 in Fig. 3, H2, H3, H4, H5, H6, H7 must be less than 20 * 10
-10Rice, then this recessed structure is only mountain valley of the present invention shape structure.If the distance between this recessed structural base and this time barrier layer 32 is greater than 20 * 10
-10Rice, for example, the H8 in Fig. 3, then this recessed structure is not a mountain valley of the present invention shape structure.According to above-mentioned restriction, determine these mountain valley shape structures after, the path length that each mountain valley shape structure is prolonged a direction is generally 10 * 10
-9Rice is to 1000 * 10
-9Between the rice, for example, the D1 in Fig. 3, D2, D3, D4, D5, D6 and D7 etc. are the path length of each mountain valley shape structure.
The density of porous luminous layer 30 of the present invention is preferably between 5% to 75%, and the density of this porous luminous layer 30 is the ratio of the path length of the path length summation of all mountain valley shape structures and this porous luminous layer.For example, in Fig. 3, the path length summation of all mountain valley shape structures is the summation of D1+D2+D3+D4+D5+D6+D7; The path length of this porous luminous layer is L.Therefore, the density of this porous luminous layer is (D1+D2+D3+D4+D5+D6+D7)/L.
Below, with reference to graphic, the light-emitting component as the embodiment of the invention is described.In graphic, identical or similar portions refers to identical or similar elements symbol, title.In addition, graphic is schematic diagram only, the physical dimension ratio among the figure may with the dimension scale of practical structures difference to some extent.
See also Fig. 4, it shows the structure of the light-emitting component with porous luminous layer 50 of first embodiment of the invention.This light-emitting component 50 comprises: substrate 41, one deck resilient coating 42,43, five layers of porous luminous layer 51,52,53,54 of one deck first conductivity coating layer (cladding layer) and 55 and one deck second conductivity coating layer 44.
This light-emitting component 50 also comprises two electrodes 45,46, and for being connected with extraneous power supply, this preferably implements material and is gold (Au).This resilient coating 42 is formed on this substrate 41.This first conductivity coating layer 43 is formed on this resilient coating 42, and this first conductivity coating layer 43 can be N type coating layer in order to electronics to be provided.This second conductivity coating layer 44 is formed on this quantum dot light emitting layer 37, and this second conductivity coating layer 44 can be P type coating layer in order to electric hole to be provided.This first conductivity coating layer 43 and this second conductivity coating layer 44 are aluminum indium nitride gallium structure, can be expressed as Al
(1-x-y)In
yGa
xN.This resilient coating 42 is a nitride structure, preferred embodiment be prior to the low temperature gallium nitride nucleating layer of growing up on the sapphire substrate 41, then growth one high-temperature ammonolysis silicon layer on low temperature gallium nitride nucleating layer is the high-temperature ammonolysis gallium layer of growing up on this silicon nitride layer, forms a resilient coating 42 jointly.
Be one first conductive electrode contact layer 47 between this first conductivity coating layer 43 and this electrode 45, this preferred embodiment is that evaporation one chromium (Cr) metal level is on N type conductivity gallium nitride coating layer 43, as the ohmic contact layer of electrode 45 with N type conductivity gallium nitride coating layer 43.Be one second conductive electrode contact layer 48 between this second conductivity coating layer 44 and this electrode 46, this preferred embodiment is that direct evaporation one ITO transparency conducting layer is on P-type conduction gallium nitride coating layer 44, as the ohmic contact layer of electrode 46 with P-type conduction gallium nitride coating layer 44.
Five layers of porous luminous layer 51,52,53,54 and 55 is formed on this first conductivity coating layer 43 in regular turn.With this porous luminous layer 51 is example explanation, and this porous luminous layer 51 has carrier limitation layer 511, barrier layer 516 on the barrier layer 515 and once.This carrier limitation layer 511 has a plurality of chevron structures 512 and 513 etc.This time barrier layer 515 is under these chevron structures 512 and 513 etc., and barrier layer 516 is on these chevron structures 512 and 513 etc. on this, and covers these chevron structures 512 and 513 etc.This time barrier layer 515 and this are gone up barrier layer 516 and are aluminum indium nitride gallium structure, can be expressed as Al
(1-x-y)In
yGa
xN, wherein, x is greater than zero; Y is more than or equal to zero; (1-x-y) more than or equal to zero.And this time barrier layer 515 and energy barrier on barrier layer 516 must be greater than the energy barrier of these chevron structures 512 and 513 etc. on this.
This carrier limitation layer 511 is an aluminum indium nitride gallium structure, can be expressed as Al
(1-x-y)In
yGa
xN, wherein, x is more than or equal to zero; Y is greater than zero; (1-x-y) more than or equal to zero.Define a plurality of mountain valleys shape structure 561,562 etc. between these chevron structures 512 and 513 etc.These mountain valley shape structures 561,562 are covered by barrier layer on this 516 at last and are filled up.These mountain valley shape structures 561,562 must meet the size restrictions of above-mentioned Fig. 2 and Fig. 3, and the density of these porous luminous layers 51,52,53,54,55 is preferably between 5% to 75%.
This porous luminous layer 51 is doping specific concentrations impurity.Its preferred embodiment is that initiatively doped silicon (Si) impurity is in this porous luminous layer 51, and the silicon atom doping number that makes this porous luminous layer 51 is less than 5 * 10
17/ cm3, its better implement mode is when growing up this porous luminous layer 51, not doped silicon (Si) atom initiatively.
Utilize this light emitting element structure of first embodiment of the invention, its element drives voltage can decline to a great extent, therefore can utilize the structure of this light-emitting component to decrease in the doping content in the luminescent layer and do not influence driving voltage, and then can obtain preferred crystal structure and improve antistatic effect and the element reliability.
With reference to figure 5, it shows the light-emitting component 60 of the tool porous luminous layer of second embodiment of the invention.In Fig. 5,, and if do not mention that especially then it has identical construction and function about the part identical with the structure of first embodiment will mark the components identical symbol.
As shown in Figure 5, the light-emitting component 60 of second embodiment of the invention, be between N type conductivity coating layer 43 and P-type conduction coating layer 44, it comprises quantum trap luminous layer 61,62 etc., the two-layer first wavelength porous property luminescent layer 63,64 etc. and the two-layer second wavelength porous property luminescent layer 65,66 of five layers of doped silicon (Si) impurity.
The quantum trap luminous layer 61,62 of five layers of doped silicon (Si) impurity etc. is formed on this N type conductivity coating layer 43 in regular turn.With this quantum and luminescent layer 61 is the example explanation, and this quantum trap luminous layer 61 has a quantum well structures 611 and two barrier layers 612 and 613.
On the quantum trap luminous layer 62 of this doped silicon (Si) impurity is the two-layer first wavelength porous property luminescent layer 63,64 in regular turn.With this first wavelength porous property luminescent layer 63 is example explanation, and it has carrier limitation layer 631, barrier layer 636 on the barrier layer 635 and once.This first wavelength porous property luminescent layer 63,64 is applied to produce one first wavelength, and this of present embodiment first wavelength is 570nm.
On this first wavelength porous property luminescent layer 64, be the two-layer second wavelength porous property luminescent layer 65,66 in regular turn.With this second wavelength porous property luminescent layer 65 is example explanation, and it has carrier limitation layer 651, barrier layer 656 on the barrier layer 655 and once.This second wavelength porous property luminescent layer 65,66 is applied to produce one second wavelength, and this of present embodiment second wavelength is 467nm.This second wavelength is different with first wavelength.
These porous luminous layers 63,64,65,66 are doping specific concentrations impurity.Its preferred embodiment is that initiatively doped silicon (Si) impurity is in these porous luminous layers, and the silicon atom doping number that makes these porous luminous layers is less than 5 * 10
17/ cm
3, its better implement mode is when growing up these porous luminous layers, not doped silicon (Si) atom initiatively.And the structure of these porous luminous layers 63,64,65,66 is as described in Fig. 2 and Fig. 3, do not add at this and gives unnecessary details.
In routine techniques, for the emission wavelength that makes a luminescent layer for longer, must make this luminescent layer usually is high indium content.But in routine techniques, the luminous efficiency of the luminescent layer of this high indium content is not high.In an embodiment of the present invention, though should be high indium content, still can have goodish highly luminescent efficient than the luminescent layer of long hair optical wavelength.
With reference to shown in Figure 6, this first wavelength porous property luminescent layer the 63, the 64th is applied to produce first wavelength, and it is 570nm, and its maximum light intensity of may command is 100.This second wavelength porous property luminescent layer the 65, the 66th is applied to produce second wavelength, and it is 467nm, and its maximum light intensity of may command is 170.In this embodiment, the density of this first wavelength porous property luminescent layer 63,64 is 7%; The density of this second wavelength porous property luminescent layer 65,66 is 25%, is respectively 100 and 170 to obtain above-mentioned maximum light intensity.
If fixing the density of this first wavelength porous property luminescent layer 63,64 is 7%, the density of adjusting this second wavelength porous property luminescent layer 65,66 is 5%, will make the maximum light intensity ratio of this first wavelength and second wavelength be 1/5 (luminous intensity of second wavelength is five times of the luminous intensities of first wavelength).If the density of this second wavelength porous property luminescent layer 65,66 is adjusted into 43%, will make to obtain maximum light intensity and be respectively 100 and 120.Therefore, utilize to adjust the density of this second wavelength porous property luminescent layer 65,66, can adjust its maximum light intensity, and and then the mixed light ratio of adjustable whole first wavelength and second wavelength.Thereby light-emitting component of the present invention can be applicable to produce each color light source, as pink, powderblue, powder yellow, powder green, all kinds of color temperature white lights etc.
The light emitting element structure of tool porous luminous layer of the present invention be different from conventional quantum well luminescent layer part for its will than low energy barrier contain the indium compound semi-conducting material further grow up be moulded have a cellular structure contain the indium compound semiconductor structure.In other words, containing on the indium compound semiconductor single plane of the low energy barrier of this tool, to have a plurality of mountain valleys shape structure, and these mountain valley shape structures will be coated by the barrier material of big energy barrier, can regulate and control the diameter and the degree of depth of these mountain valley shape structures in the application, even these mountain valley shape structures can run through directly and contain the indium compound semiconductor layer.Utilize when growing up this porous luminous layer structure and can reduce element drives voltage and leakage current characteristic significantly.In addition when the multi-layer porous property luminescent layer of growth different wave length, the hole is compound is created in the luminescent layer with different energy barriers for the electronics electricity.
Therefore porous luminous layer of the present invention not only can effectively promote the performance of light-emitting component, more can realize single-chip mixed light element, has characteristics such as light efficiency benefit occurred frequently, high-reliability, high mixed light modularity and low cost simultaneously.And porous luminous layer structure of the present invention can overcome the shortcoming that light-emitting component on the routine techniques only can luminous single wavelength, light-emitting component of the present invention can realize with the luminescent layer of the luminous frequency spectrum of difference in conjunction with and produce efficient, the element of high resiliency mixed light ratio.
As shown in Figure 7, the light-emitting component 70 of third embodiment of the invention, be between N type conductivity coating layer 43 and P-type conduction coating layer 44, it comprises the quantum of two-layer doped silicon (Si) impurity and 71,72, five layer of first wavelength porous property luminescent layer 73,74 of luminescent layer etc. and the two-layer second wavelength porous property luminescent layer 75,76.
The quantum trap luminous layer 71,72 of two-layer doped silicon (Si) impurity etc. is formed on this N type conductivity coating layer 43 in regular turn.With this quantum trap luminous layer 71 is the example explanation, and this quantum trap luminous layer 71 has a quantum well structures 711 and two barrier layers 712 and 713.
On the quantum trap luminous layer 72 of this doped silicon (Si) impurity is five layer of first wavelength porous property luminescent layer 73,74 in regular turn.With this first wavelength porous property luminescent layer 73 is example explanation, and it has carrier limitation layer 731, barrier layer 736 on the barrier layer 735 and once.This first wavelength porous property luminescent layer 73,74 is applied to produce one first wavelength, and this of present embodiment first wavelength is 565nm.
On this first wavelength porous property luminescent layer 74, be the two-layer second wavelength porous property luminescent layer 75,76 in regular turn.With this second wavelength porous property luminescent layer 75 is example explanation, and it has carrier limitation layer 751, barrier layer 756 on the barrier layer 755 and once.This second wavelength porous property luminescent layer 75,76 is applied to produce one second wavelength, and this of present embodiment second wavelength is 465nm.This second wavelength is different with first wavelength.
These porous luminous layers 73,74,75,76 are doping specific concentrations impurity.Its preferred embodiment is that initiatively doped silicon (Si) impurity is in these porous luminous layers, and the silicon atom doping number that makes these porous luminous layers is less than 5 * 10
17/ cm
3, its better implement mode is when growing up these porous luminous layers, not doped silicon (Si) atom initiatively.And the structure of these porous luminous layers 73,74,75,76 is as described in Fig. 2 and Fig. 3, do not add at this and gives unnecessary details.
With reference to shown in Figure 8, this first wavelength porous property luminescent layer 73,74 is applied to produce first wavelength, and it is 565nm, and its maximum light intensity of may command is 120.This second wavelength porous property luminescent layer 75,76 is applied to produce second wavelength, and it is 465nm, and its maximum light intensity of may command is 180.In this embodiment, the density of this first wavelength porous property luminescent layer 73,74 is 5%; The density of this second wavelength porous property luminescent layer 75,76 is 28%, is respectively 120 and 180 to obtain above-mentioned maximum light intensity.
If fixing the density of this second wavelength porous property luminescent layer 75,76 is 28%, the density of adjusting this first wavelength porous property luminescent layer 73,74 is 43%, will make the maximum light intensity ratio of this first wavelength and second wavelength be 3 (luminous intensity of first wavelength is three times of the luminous intensities of second wavelength).Therefore, utilize to adjust the density of this first wavelength porous property luminescent layer 73,74, can adjust its maximum light intensity, and and then the mixed light ratio of adjustable whole first wavelength and second wavelength.
As shown in Figure 9, the light-emitting component 80 of fourth embodiment of the invention, be between N type conductivity coating layer 43 and P-type conduction coating layer 44, it comprises quantum trap luminous layer 81,82, the two-layer first wavelength porous property luminescent layer 83,84 etc. and the two-layer second wavelength porous property luminescent layer 85,86 of four layers of doped silicon (Si) impurity.
The quantum trap luminous layer 81,82 of two-layer doped silicon (Si) impurity etc. is formed on this N type conductivity coating layer 43 in regular turn.With this quantum trap luminous layer 81 is the example explanation, and this quantum and luminescent layer 81 have a quantum well structures 811 and two barrier layers 812 and 813.
On the quantum trap luminous layer 82 of this doped silicon (Si) impurity is the two-layer first wavelength porous property luminescent layer 83,84 in regular turn.With this first wavelength porous property luminescent layer 83 is example explanation, and it has carrier limitation layer 831, barrier layer 836 on the barrier layer 835 and once.This first wavelength porous property luminescent layer 83,84 is applied to produce one first wavelength, and this of present embodiment first wavelength is 410nm.
On this first wavelength porous property luminescent layer 84, be the two-layer second wavelength porous property luminescent layer 85,86 in regular turn.With this second wavelength porous property luminescent layer 85 is example explanation, and it has carrier limitation layer 851, barrier layer 856 on the barrier layer 855 and once.This second wavelength porous property luminescent layer 85,86 is applied to produce one second wavelength, and this of present embodiment second wavelength is 470nm.This second wavelength is different with first wavelength.
These porous luminous layers 83,84,85,86 are doping specific concentrations impurity.Its preferred embodiment is that initiatively doped silicon (Si) impurity is in these porous luminous layers, and the silicon atom doping number that makes these porous luminous layers is less than 5 * 10
17/ cm
3, its better implement mode is when growing up these porous luminous layers, not doped silicon (Si) atom initiatively.And the structure of these porous luminous layers 83,84,85,86 is as described in Fig. 2 and Fig. 3, do not add at this and gives unnecessary details.
With reference to shown in Figure 10, this first wavelength porous property luminescent layer 83,84 is for being applied to produce first wavelength, and it is 410nm, and its maximum light intensity of may command is 120.This second wavelength porous property luminescent layer 85,86 is applied to produce second wavelength, and it is 470nm, and its maximum light intensity of may command is 150.In this embodiment, the density of this first wavelength porous property luminescent layer 83,84 is 15%; The density of this second wavelength porous property luminescent layer 85,86 is 34%, is respectively 120 and 150 to obtain above-mentioned maximum light intensity.
The white light method that excites green-yellow light phosphor powder (as YAG) to be produced owing to the blue light that utilizes wavelength for 455-470nm at present also can't obtain better color rendering, and this is because can meet the blue light wavelength that excites the yellow phosphor powder of green-yellow light and can't be utilized to excite the long wavelength's phosphor powder as yellow orange light, ruddiness to produce high light conversion efficiency simultaneously.And studies show that at present preferred light Wavelength-converting is 370nm-450nm, therefore can utilize multiple spectra single-chip technology of the present invention to increase the conversion efficiency that another emission wavelength comes the optimization phosphor powder for the frequency spectrum of 410nm except blue light wavelength.
If fixing the density of this first wavelength porous property luminescent layer 83,84 is 15%, the density of adjusting this second wavelength porous property luminescent layer 85,86 is 7%, will make the maximum light intensity of this first wavelength and second wavelength be respectively 40 and 210.Therefore, utilize to adjust the density of this second wavelength porous property luminescent layer 85,86, can adjust its maximum light intensity, and and then the mixed light ratio of adjustable whole first wavelength and second wavelength.
Light-emitting component of the present invention is not limited to the first above-mentioned wavelength porous property luminescent layer and the second wavelength porous property luminescent layer, it can also comprise a plurality of porous luminous layers, be formed between this N type conductivity coating layer and this P-type conduction coating layer, these porousness photospheres have a plurality of emission wavelengths, these emission wavelengths are different with this first wavelength and this second wavelength, with realize with the luminescent layer of the luminous frequency spectrum of difference in conjunction with and produce efficient, the element of high resiliency mixed light ratio.
The foregoing description only is explanation principle of the present invention and effect thereof, and unrestricted the present invention.Therefore, one of ordinary skill in the art can make amendment to the foregoing description under the prerequisite of spirit of the present invention and change.Interest field of the present invention is listed in the claim as the aforementioned.
Claims (14)
1. the light-emitting component of a tool porous luminous layer, it comprises:
A substrate;
One deck first conductivity coating layer;
One deck second conductivity coating layer; And
At least one deck porous luminous layer, be formed between this first conductivity coating layer and this second conductivity coating layer, this porous luminous layer has barrier layer on, barrier layer and carrier limitation layer once, this carrier limitation layer is in this on the barrier layer and descends between the barrier layer, this carrier limitation layer has a plurality of chevron structures, these a plurality of chevron structures define a plurality of mountain valleys shape structure, this carrier limitation layer is for containing the nitride structure of indium, and the energy barrier of this carrier limitation layer is less than the energy barrier on barrier layer on this and this time barrier layer.
2. light-emitting component as claimed in claim 1, wherein this carrier limitation layer is an aluminum indium nitride gallium structure, can be expressed as Al
(1-x-y)In
yGa
xN, wherein, x is more than or equal to zero; Y is greater than zero; (1-x-y) more than or equal to zero.
3. light-emitting component as claimed in claim 1, wherein this time barrier layer reaches this and upward is aluminum indium nitride gallium structure in the barrier layer, can be expressed as Al
(1-x-y)In
yGa
xN, wherein, x is greater than zero; Y is more than or equal to zero; (1-x-y) more than or equal to zero.
4. light-emitting component as claimed in claim 1, wherein this porous luminous layer is a doping specific concentrations impurity, the content of this specific concentrations impurity is 0 to 5 * 10
17/ cm
3Between.
5. light-emitting component as claimed in claim 1, wherein the bottom of each mountain valley shape structure and the distance between this time barrier layer are to being less than or equal to 20 * 10 more than or equal to 0
-10Between the rice, the path length of each mountain valley shape structure is 5 * 10
-9Rice is to 1000 * 10
-9Between the rice.
6. light-emitting component as claimed in claim 5, wherein the density of this porous luminous layer is between 5% to 75%, the density of this porous luminous layer is the ratio of the path length of the path length summation of all mountain valley shape structures and this porous luminous layer.
7. the light-emitting component of a tool porous luminous layer, it comprises:
A substrate;
One deck N type conductivity coating layer;
One deck P-type conduction coating layer; And
At least one deck first wavelength porous property luminescent layer and one deck second wavelength porous property luminescent layer at least, they are formed between this N type conductivity coating layer and this P-type conduction coating layer, this first wavelength is different with this second wavelength, this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer have barrier layer on respectively, once a barrier layer and a carrier limit to layer, this carrier limitation layer is in this on the barrier layer and descends between the barrier layer, this carrier limitation layer has a plurality of chevron structures, these a plurality of chevron structures define a plurality of mountain valleys shape structure, this carrier limitation layer is for containing the nitride structure of indium, and the energy barrier of this carrier limitation layer is less than the energy barrier on barrier layer on this and this time barrier layer.
8. light-emitting component as claimed in claim 7, wherein contiguous this P-type conduction coating layer of this first wavelength porous property luminescent layer.
9. light-emitting component as claimed in claim 7, it also comprises a plurality of porous luminous layers, be formed between this N type conductivity coating layer and this P-type conduction coating layer, these a plurality of porous luminous layers have a plurality of emission wavelengths, and these a plurality of emission wavelengths are different with this first wavelength and this second wavelength.
10. light-emitting component as claimed in claim 7, wherein this carrier limitation layer is an aluminum indium nitride gallium structure, can be expressed as Al
(1-x-y)In
yGa
xN, wherein, x is more than or equal to zero; Y is greater than zero; (1-x-y) more than or equal to zero.
11. light-emitting component as claimed in claim 7, wherein this time barrier layer reaches this and upward is aluminum indium nitride gallium structure in the barrier layer, can be expressed as Al
(1-x-y)In
yGa
xN, wherein, x is greater than zero; Y is more than or equal to zero; (1-x-y) more than or equal to zero.
12. light-emitting component as claimed in claim 7, wherein this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer are doping specific concentrations impurity, and the content of this specific concentrations impurity is 0 to 5 * 10
17/ cm
3Between.
13. light-emitting component as claimed in claim 7, wherein the distance between the bottom of the following barrier layer of this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer and each mountain valley shape structure that it has separately is more than or equal to 0 to being less than or equal to 20 * 10
-10Rice, the path length of each mountain valley shape structure is 5 * 10
-9Rice is to 1000 * 10
-9Between the rice.
14. light-emitting component as claimed in claim 13, wherein the density of this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer is between 5% to 75%, and the density of this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer is respectively the path length summation of its all mountain valley shape structures that have separately and the ratio of this first wavelength porous property luminescent layer and this second wavelength porous property luminescent layer path length separately.
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|---|---|---|---|
| CNB200410096084XA CN100395900C (en) | 2004-11-29 | 2004-11-29 | Luminous element with porous luminous layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410096084XA CN100395900C (en) | 2004-11-29 | 2004-11-29 | Luminous element with porous luminous layer |
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|---|---|
| CN1783520A CN1783520A (en) | 2006-06-07 |
| CN100395900C true CN100395900C (en) | 2008-06-18 |
Family
ID=36773441
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11354839A (en) * | 1998-06-04 | 1999-12-24 | Mitsubishi Cable Ind Ltd | Gan semiconductor light emitting element |
| US20020136932A1 (en) * | 2001-03-21 | 2002-09-26 | Seikoh Yoshida | GaN-based light emitting device |
| US20040023427A1 (en) * | 2001-09-27 | 2004-02-05 | University Of Singapore | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
| US20040026704A1 (en) * | 1997-11-18 | 2004-02-12 | Technologies & Devices Int.'s Inc. | III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
-
2004
- 2004-11-29 CN CNB200410096084XA patent/CN100395900C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040026704A1 (en) * | 1997-11-18 | 2004-02-12 | Technologies & Devices Int.'s Inc. | III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
| JPH11354839A (en) * | 1998-06-04 | 1999-12-24 | Mitsubishi Cable Ind Ltd | Gan semiconductor light emitting element |
| US20020136932A1 (en) * | 2001-03-21 | 2002-09-26 | Seikoh Yoshida | GaN-based light emitting device |
| US20040023427A1 (en) * | 2001-09-27 | 2004-02-05 | University Of Singapore | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
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| CN1783520A (en) | 2006-06-07 |
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Effective date of registration: 20231212 Address after: Tokushima County, Japan Patentee after: NICHIA Corp. Address before: TaiWan, China Patentee before: Genesis Photonics Inc. |