CN100398693C - Multifunction composite magnetic controlled plasma sputtering device - Google Patents
Multifunction composite magnetic controlled plasma sputtering device Download PDFInfo
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- CN100398693C CN100398693C CNB2005100287055A CN200510028705A CN100398693C CN 100398693 C CN100398693 C CN 100398693C CN B2005100287055 A CNB2005100287055 A CN B2005100287055A CN 200510028705 A CN200510028705 A CN 200510028705A CN 100398693 C CN100398693 C CN 100398693C
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Abstract
The present invention belongs to the technical field of surface processing, particularly to a sputtering device of multifunctional composite magnetically controlled plasma. The sputtering device comprises a main vacuum cavity (1), an accessory vacuum cavity (2), a sluice valve (3), a magnetic force transmission rod (4), a gas flow controller (9), an air inlet pipe (10) of the main vacuum cavity, a vacuum pumping interface pipe (5) of the main vacuum cavity, a vacuum pumping sluice valve (6) of the main vacuum cavity, a molecular pump (7), a mechanical pump (8), an air inlet pipe (11) of the accessory vacuum cavity, a vacuum pumping interface pipe (12) of the accessory vacuum cavity and an observing window (13). Compared with the prior art, the sputtering device adopts a modular design concept and an integral control mode to enable the quality of film deposition to be improved and also enable the whole process of the film deposition to be shortened. Simultaneously, the manufacturing cost is largely reduced, and the production efficiency is largely increased.
Description
[technical field]
The present invention relates to vacuum plasma depositing device field, specifically a kind of multifunction composite magnetic controlled plasma sputtering device.
[background technology]
Along with the development of novel material, vacuum technique more and more is applied to the preparation and the modification of material, and becomes the main means of thin-film material preparation.The preparation material can guarantee the cleaning of material and pure under vacuum environment, combines with hypobaric plasma technique, can by the adjusting of processing parameter, prepare the thin-film material of various functions according to people's design and needs.In the manufacturing of semiconductor-based one-tenth circuit and opto-electronic device, used thin-film material mainly contains physical vapor deposition PVD and chemical vapour deposition CVD prepares.And in the PVD method, compare with electron-beam vapor deposition method, because of the magnetic controlled plasma sputtering method has good controllability, develop into the sedimentary main stream approach of high performance thin film gradually.Plasma body is made up of neutral atom or atomic group and ion and electronics as outer the 4th attitude of the ternary material of solid, liquid, gas, and integral body is the quasi-neutrality state in given volume.Lower temperature plasma technology has been widely used in the preparation and the etching of thin-film material.Wherein magnetron sputtering technique is to be former target with solid material, make target ionization and deposit film material by added electric field in certain atmosphere in as gases such as argons, strengthen the ionization level that plasma density improves target by applying high-intensity magnetic field, film deposition rate is improved.In devices such as photoelectron, semi-conductor, information storage are made, need the preparation of multilayer film, every layer material needs a vacuum cavity to deposit, and total system generally needs a plurality of vacuum cavities to make up to realize required function.Make so also to make the preparation cost of thin-film material increase by the with high costs of system, thereby limited the application of magnetron sputtering technique.Along with the development of device, the preparation of thin-film material requires also more and more accurate, requires homogeneity, tack and the controllability of film to get well in addition, so will keep substrate surface and film surface cleaning when thin film deposition.Require depositing device like this except that will having substrate rotation, heating function, also have the plasma body function of on-line cleaning simultaneously, mainly lean against substrate at present and add an ion source and realize.Make that so also equipment cost significantly increases, and the homogeneity when cleaning is unsatisfactory.
[summary of the invention]
The objective of the invention is for overcoming the deficiencies in the prior art, and a kind of multifunction composite magnetic controlled plasma sputtering device of design.
For achieving the above object, design a kind of multifunction composite magnetic controlled plasma sputtering device, comprise that main vacuum cavity 1, attached vacuum cavity 2, slide valve 3, magnetic force transmission pole 4, gas flow controller 9, main vacuum cavity inlet pipe 10, main vacuum cavity vacuumize mouth-piece 5, main vacuum cavity and vacuumize slide valve 6, molecular pump 7, mechanical pump 8, attached vacuum cavity inlet pipe 11, attached vacuum cavity and vacuumize mouth-piece 12, viewing window 13; It is characterized in that: an end of magnetic force transmission pole 4 connects an end of attached vacuum cavity 2, the other end of attached vacuum cavity 2 connects an end of slide valve 3, the other end of slide valve 3 connects an end of main vacuum cavity 1, the other end of main vacuum cavity 1 connects viewing window 13, the main vacuum cavity inlet pipe 10 of main vacuum cavity bottom connects an end of gas flow controller 9, the other end of gas flow controller 9 connects the attached vacuum cavity inlet pipe 11 of attached vacuum cavity bottom, the bottom of main vacuum cavity connects the upper port that main vacuum cavity vacuumizes mouth-piece 5, the lower port that main vacuum cavity vacuumizes mouth-piece 5 connects the end that main vacuum cavity vacuumizes slide valve 6, main vacuum cavity vacuumizes the other end link molecule pump 7 of slide valve 6, the prime of molecular pump 7 connects mechanical pump 8, the end that main vacuum cavity vacuumizes mouth-piece 5 connects the port that attached vacuum cavity vacuumizes mouth-piece 12, and the another port that attached vacuum cavity vacuumizes mouth-piece 12 connects the bottom of attached vacuum cavity.Described main vacuum cavity 1 upper inside wall is equipped with and adds hot basal body 16, add hot basal body 16 surface spacing 0.5-2mm places and be substrate frame 20, substrate frame 20 bottoms and 19 vertical connections of specimen holder, 19 times two ends of specimen holder are installed sample 1 and sample 2 18 respectively, add hot basal body 16 go-and-retum two shielding cases are installed respectively apart from the 0.5-2mm place; Main vacuum cavity 1 inner bottom part two ends are installed the first magnetic control sputtering cathode support 22 and the second magnetic control sputtering cathode support 25 respectively, first magnetic control sputtering cathode 21 is installed in the first magnetic control sputtering cathode support, 22 upper ends, the other baffle plate 23 of installing of first magnetic control sputtering cathode, second magnetic control sputtering cathode 24 is installed in the second magnetic control sputtering cathode support, 25 upper ends, the other baffle plate 26 of installing of second magnetic control sputtering cathode is installed dividing plate 27 between first magnetic control sputtering cathode 21 and second magnetic control sputtering cathode 24.Go up the two poles of the earth that lower wall connects plasma generating electrodes 28 respectively in the described attached vacuum cavity 2, sample pedestal 29 is installed in one of plasma generating electrodes and extremely goes up.The magnetic control sputtering cathode of described main vacuum cavity and substrate frame 20 inside all be connected direct supply or radio-frequency power supply with substrate frame insulating central rotating shaft.The target of plated film to some extent is installed on the magnetic control sputtering cathode of described main vacuum cavity.The number of the magnetic control sputtering cathode of described main vacuum cavity is the 1-12 cover, baffle plate of the other installation of every cover magnetic control sputtering cathode, and magnetic control sputtering cathode and plate washer be the corresponding angle of deflection as required, between several magnetic control sputtering cathodes dividing plate is installed.The substrate frame of described main vacuum cavity and main vacuum cavity mutually insulated.The plasma generating electrodes 28 of described attached vacuum cavity is connected with direct supply or radio-frequency power supply.The sputter pattern adopts vertical sputter pattern or the burnt sputter pattern of copolymerization.This multifunction composite magnetic controlled plasma sputtering device is used to conduct electricity the sputter of target or non-conductive target.
The present invention compares with prior art, has adopted modular design method and whole master mode, except that the quality that makes thin film deposition is improved, the whole process of thin film deposition is shortened, and manufacturing cost significantly reduces simultaneously, enhances productivity greatly.
[description of drawings]
Fig. 1 is that the vertical sputter mode configuration of the embodiment of the invention connects block diagram.
The structured flowchart of master's vacuum cavity when Fig. 2 is the burnt sputter pattern of the copolymerization of the embodiment of the invention.
Appointment Fig. 1 is a Figure of abstract.
Referring to Fig. 1,1 is main vacuum cavity; 2 is attached vacuum cavity; 3 is slide valve; 4 is the magnetic force transmission pole; 5 is that main vacuum cavity vacuumizes mouth-piece; 6 is that main vacuum cavity vacuumizes slide valve; 7 is molecular pump; 8 is mechanical pump; 9 is gas flow controller; 10 is main vacuum cavity inlet mouth; 11 is attached vacuum cavity inlet mouth; 12 vacuumize mouth-piece for attached vacuum cavity; 13 is viewing window; 14 is shielding case; 15 is shielding case; 16 for adding hot basal body; 17 is sample one; 18 is sample two; 19 is specimen holder; 20 is substrate frame; 21 is first magnetic control sputtering cathode; 22 is the first magnetic control sputtering cathode support; 23 is baffle plate; 24 is second magnetic control sputtering cathode; 25 is the second magnetic control sputtering cathode support; 26 is baffle plate; 27 is dividing plate; 28 is the plasma generating electrodes; 29 is the sample pedestal.
Referring to Fig. 2,30 is main vacuum cavity; 31 is viewing window; 32 is main vacuum cavity inlet mouth; 33 is shielding case; 34 is shielding case; 35 for adding hot basal body; 36 is specimen holder; 37 is substrate frame; 38 is sample; 39 is magnetic control sputtering cathode; 40 is the magnetic control sputtering cathode support; 41 is baffle plate; 42 is magnetic control sputtering cathode; 43 is the magnetic control sputtering cathode support; 44 is baffle plate; 45 is dividing plate.
[embodiment]
The invention will be further described below in conjunction with accompanying drawing, and the present invention still is more clearly ground concerning the people of this professional skill field.
During example 1. preparation multilayer film, magnetic controlled plasma sputtering device adopts vertical sputter operating mode, and order is coated with multilayer film; Device is made up of main attached two vacuum cavities and vacuum acquiring system, and wherein main vacuum cavity carries out magnetron sputtering plating; Attached vacuum cavity is used for carrying out sample and send and get and on-line cleaning and surface treatment.Vacuum acquiring system mainly by molecular pump, mechanical pump, main vacuum cavity vacuumizes mouth-piece and slide valve is formed.One end of magnetic force transmission pole 4 connects an end of attached vacuum cavity 2, the other end of attached vacuum cavity 2 connects an end of CF150 slide valve 3, the other end of CF150 slide valve 3 connects an end of main vacuum cavity 1, main vacuum cavity bottom connects the upper port that main vacuum cavity vacuumizes mouth-piece 5, the lower port that main vacuum cavity vacuumizes mouth-piece 5 is connected with the CF200 slide valve, the CF200 slide valve the other end and pumping speed are that the side of the molecular pump of 1200L/s is taken out the transition adapting pipe and linked to each other, one side of molecular pump and pumping speed are that the mechanical pump of 8L/s links to each other, the side that main vacuum cavity vacuumizes mouth-piece 5 connects the port that attached vacuum cavity vacuumizes mouth-piece 12, the another port that attached vacuum cavity vacuumizes mouth-piece 12 connects the bottom of attached vacuum cavity, makes the shared cover vacuum acquiring system of winner's vacuum cavity and attached vacuum cavity.Wherein designing main vacuum cavity size dimension is: Φ 630mm * H400mm, attached vacuum cavity size dimension are: Φ 250mm * H400mm.On the lower flange chassis of main vacuum cavity and attached vacuum cavity, respectively leave an air inlet port and be connected the control that is used for gas flow with the gas mass flow amount controller.Main vacuum cavity upper end is the vertical lift type structure, and the highest attainable vacuum of main vacuum cavity can reach 10
-6Pa, add the lower surface that hot basal body is placed in the blind flange of main vacuum cavity, be used for heating to deposited samples, adding between hot basal body and the blind flange is the refractory stainless steel thermal stabilization shield, play the shield effectiveness of electricity and heat, add the hot basal body go-and-retum shielding case is installed respectively apart from the 0.5-2mm place, heating matrix surface spacing 0.5-2mm place is a substrate frame, the substrate frame maximum heating temperature can reach 800 ℃, central rotating shaft in the substrate frame connects direct supply or radio-frequency power supply, the formation scope is negative 100 volts to negative 500 volts bias voltage, and making its highest rotational velocity is 20 rev/mins, finishes the location, rotation and scanning function.The substrate frame bottom is connected with specimen holder is vertical, the magnetic control sputtering cathode of six cover Φ 75 as required distributes in main vacuum cavity, under specimen holder, six cover samples are installed respectively simultaneously with the vertical corresponding position of magnetic control sputtering cathode, target utilization on the magnetic control sputtering cathode is greater than 40% at this moment, and operating mode is DC/RF; A pneumatic type baffle plate is joined on each magnetic control sputtering cathode side, be used to control the unlatching of sputter product when sample deposition, and dividing plate is installed in the middle of a plurality of magnetic control sputtering cathodes, be used to the mutual pollution that stops that each target is caused when sputter, be separately installed with the target of institute's plated film on the magnetic control sputtering cathode.This moment, sample surfaces and magnetron cathode target surface were parallel to each other, and plasma beam that produces at the negative electrode target when sputter and sample are called vertical sputter pattern in vertical state, and this moment, baffle plate was also corresponding to meet at right angles, and is mainly used in the preparation of multilayer film.It is the plasma body generating electrodes that a cleaning negative electrode is installed at center, attached vacuum cavity lower end, equally product pedestal is installed in the upper end, a magnetic force transmission pole is installed in the side, can make sample pass through CF150 slide valve and the transmission of main vacuum cavity, add direct current or rf electric field at plasma body generating electrodes two ends, feed certain atmosphere such as nitrogen etc. by the inlet mouth under the attached vacuum cavity again, can produce plasma body, processing such as the nitrogenize of the cleaning of sample surfaces and the plasma surface behind the sample plated film, oxidation before being used to deposit.
During example target more than 2. magnetic control co-sputtering plasma system deposit film, the magnetron cathode edge is the axis tilt certain angle wherein, make each negative electrode axis focus on the substrate frame central position, the plasma beam and the sample that produce at the negative electrode target when sputter are certain angle, be called the burnt sputter pattern of copolymerization, this moment, baffle plate also deflection respective angles was mainly used in the preparation of alloy or multilayer film.This moment, main vacuum cavity size dimension was: Φ 500mm * H450mm, attached vacuum cavity size dimension are: Φ 250mm * H400mm.The magnetic control sputtering cathode of distribution quadruplet Φ 75 in the main vacuum cavity, sample is installed in the central position under specimen holder, and this moment, four targets focused on the substrate frame center altogether, and the target utilization on the magnetic control sputtering cathode is greater than 40%, and operating mode is DC/RF.
Claims (8)
1. multifunction composite magnetic controlled plasma sputtering device comprises that main vacuum cavity (1), attached vacuum cavity (2), slide valve (3), magnetic force transmission pole (4), gas flow controller (9), main vacuum cavity inlet pipe (10), main vacuum cavity vacuumize mouth-piece (5), main vacuum cavity and vacuumize slide valve (6), molecular pump (7), mechanical pump (8), attached vacuum cavity inlet pipe (11), attached vacuum cavity and vacuumize mouth-piece (12), viewing window (13); It is characterized in that: an end of magnetic force transmission pole (4) connects an end of attached vacuum cavity (2), the other end of attached vacuum cavity (2) connects an end of slide valve (3), the other end of slide valve (3) connects an end of main vacuum cavity (1), the other end of main vacuum cavity (1) connects viewing window (13), the main vacuum cavity inlet pipe (10) of main vacuum cavity bottom connects an end of gas flow controller (9), the other end of gas flow controller (9) connects the attached vacuum cavity inlet pipe (11) of attached vacuum cavity bottom, the bottom of main vacuum cavity connects the upper port that main vacuum cavity vacuumizes mouth-piece (5), the lower port that main vacuum cavity vacuumizes mouth-piece (5) connects the end that main vacuum cavity vacuumizes slide valve (6), main vacuum cavity vacuumizes the other end link molecule pump (7) of slide valve (6), the prime of molecular pump (7) connects mechanical pump (8), the end that main vacuum cavity vacuumizes mouth-piece (5) connects the port that attached vacuum cavity vacuumizes mouth-piece (12), and the another port that attached vacuum cavity vacuumizes mouth-piece (12) connects the bottom of attached vacuum cavity; Go up the two poles of the earth that lower wall connects plasma generating electrodes (28) respectively in the described attached vacuum cavity (2), sample pedestal (29) is installed in one of plasma generating electrodes and extremely goes up; The number of the magnetic control sputtering cathode of described main vacuum cavity is the 1-12 cover, baffle plate of the other installation of every cover magnetic control sputtering cathode, and magnetic control sputtering cathode and plate washer be the corresponding angle of deflection as required, between several magnetic control sputtering cathodes dividing plate is installed.
2. as claims 1 described a kind of multifunction composite magnetic controlled plasma sputtering device, it is characterized in that: described main vacuum cavity (1) upper inside wall is equipped with and adds hot basal body (16), add hot basal body (16) surface spacing 0.5-2mm place and be substrate frame (20), substrate frame (20) bottom and vertical connection of specimen holder (19), specimen holder (19) is installed sample one (17) and sample two (18) respectively in two ends down, add hot basal body (16) go-and-retum two shielding cases (14,15) are installed respectively apart from the 0.5-2mm place; Main vacuum cavity (1) inner bottom part two ends are installed the first magnetic control sputtering cathode support (22) and the second magnetic control sputtering cathode support (25) respectively, first magnetic control sputtering cathode (21) is installed in the first magnetic control sputtering cathode support (22) upper end, the other baffle plate (23) of installing of first magnetic control sputtering cathode, second magnetic control sputtering cathode (24) is installed in the second magnetic control sputtering cathode support (25) upper end, the other baffle plate (26) of installing of second magnetic control sputtering cathode is installed dividing plate (27) between first magnetic control sputtering cathode (21) and second magnetic control sputtering cathode (24).
3. as claims 1 or 2 described a kind of multifunction composite magnetic controlled plasma sputtering devices, it is characterized in that: what the magnetic control sputtering cathode of described main vacuum cavity and substrate frame (20) were inner all is connected direct supply or radio-frequency power supply with substrate frame insulating central rotating shaft.
4. as claims 1 or 2 described a kind of multifunction composite magnetic controlled plasma sputtering devices, it is characterized in that: the target of plated film to some extent is installed on the magnetic control sputtering cathode of described main vacuum cavity.
5. as claims 1 or 2 described a kind of multifunction composite magnetic controlled plasma sputtering devices, it is characterized in that: the substrate frame of described main vacuum cavity and main vacuum cavity mutually insulated.
6. as claim 1 or 3 described a kind of multifunction composite magnetic controlled plasma sputtering devices, it is characterized in that: the plasma generating electrodes (28) of described attached vacuum cavity is connected with direct supply or radio-frequency power supply.
7. as claims 1 described a kind of multifunction composite magnetic controlled plasma sputtering device, it is characterized in that: the sputter pattern adopts vertical sputter pattern or the burnt sputter pattern of copolymerization.
8. as claims 1 described a kind of multifunction composite magnetic controlled plasma sputtering device, it is characterized in that: this multifunction composite magnetic controlled plasma sputtering device is used to conduct electricity the sputter of target or non-conductive target.
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| CN101736292B (en) * | 2008-11-19 | 2011-12-07 | 中国科学院沈阳科学仪器研制中心有限公司 | Composite magnetic control and ion beam sputtering and depositing system |
| CN101693989B (en) * | 2009-08-25 | 2011-05-11 | 东莞宏威数码机械有限公司 | Photoelectric sensing type cavity observing window |
| CN102433538A (en) * | 2010-09-29 | 2012-05-02 | 鸿富锦精密工业（深圳）有限公司 | Sputtering equipment |
| CN102226266A (en) * | 2011-06-07 | 2011-10-26 | 福莱特光伏玻璃集团股份有限公司 | System for inputting substrates in negative pressure room in vacuum coating operation of Low-E glass |
| CN102864251A (en) * | 2012-09-17 | 2013-01-09 | 山西太钢不锈钢股份有限公司 | Method for enhancing separation utilization ratio of steel slag |
| CN104465283B (en) * | 2014-12-11 | 2017-04-05 | 中国科学院电工研究所 | A kind of low-temperature cooling system of superconducting intense magnetic field magnetic control sputtering cathode |
| JP6629116B2 (en) * | 2016-03-25 | 2020-01-15 | 芝浦メカトロニクス株式会社 | Plasma processing equipment |
| CN105970172A (en) * | 2016-06-14 | 2016-09-28 | 肇庆市大力真空设备有限公司 | Simple horizontal magnetic-control coating equipment and coating method thereof |
| CN109763107B (en) * | 2019-02-14 | 2021-03-02 | 拓米(成都)应用技术研究院有限公司 | Vacuum coating system for preparing metal-polymer multilayer composite film |
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| JPH0625846A (en) * | 1992-07-09 | 1994-02-01 | Nachi Fujikoshi Corp | Composite sputtering device |
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Patent Citations (5)
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| JPH0318020A (en) * | 1989-06-14 | 1991-01-25 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP3018020B2 (en) * | 1991-11-14 | 2000-03-13 | 株式会社アステック入江 | Purification method of iron chloride waste liquid containing chromium, etc. |
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