CN100409444C - Non-volatility memory, switching method and preparing method based on resistance change - Google Patents

Non-volatility memory, switching method and preparing method based on resistance change Download PDF

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CN100409444C
CN100409444C CNB2005100275490A CN200510027549A CN100409444C CN 100409444 C CN100409444 C CN 100409444C CN B2005100275490 A CNB2005100275490 A CN B2005100275490A CN 200510027549 A CN200510027549 A CN 200510027549A CN 100409444 C CN100409444 C CN 100409444C
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voltage
preparation
resistance
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CN1738051A (en
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陈立东
王群
董睿
李效民
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Shanghai Institute of Ceramics of CAS
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Abstract

The present invention relates to the switching method and the preparing method of a non-volatility memory based on resistance change. The present invention uses a sandwich structure of Pt-Re<1-x>A<x>MnO3-Ag as a base unit, wherein x is more than 0.05 and is less than 0.95, A is Ca or Ba, and Re is La or Pr. The present invention is characterized in that double nodes A and B are selected in the array of a top electrode Ag, a distance between the double nodes A and B is over 5 times larger than the thickness of a film, the double nodes A and B are connected with an O point in the array of a bottom electrode Pt by a metal lead, the function of electric impulse is applied by the double nodes which are selected, 5 switching modes are carried out by a method for changing the voltage of the electric impulse, chemical proportion mixed materials are used at the time of preparation, finally SPS is sintered to be butt materials, and impulse laser deposition technology is adopted to deposit the film on the bottom electrode to prepare the sandwich base unit.

Description

Non-volatility memorizer, changing method and preparation method based on resistance variations
Technical field
The present invention relates under a kind of room temperature to relate to a kind of non-volatility memorizer that can switch fast, changing method and preparation method or rather based on non-volatility memorizer (RRAM), changing method and the preparation method of resistance variations.
Background technology
Non-volatility memorizer (NVM) is meant behind dump, a kind of memory that institute's canned data can not lose yet.Non-volatility memorizer is widely used in fields such as computer, automobile, telecommunication and modern industry.Since the 1950's, mask ROM (ROM), electrically-erasable read-only memory (EPROM), electric writable and eresable read-only memory (EEPROM) and flash memory non-volatility memorizers such as (FLASH) have been invented in succession.In the last few years, along with the raising and the microminiaturized trend of Computing performance makes emerging non-volatility memorizer, obtained fast development as ferroelectric memory (FRAM), magnetic storage (MRAM) and phase transition storage (OUM).At the development trend of information market, it is fast to possess access speed, and cost is low, and processing procedure is simple, density of data storage height, and power consumption non-volatility memorizer low and unlimited characteristic such as erasable is following research direction.Present case is can reach above-mentioned requirements fully without any a class memory technology, so at the memory of different user demand employings based on different physical mechanisms drivings.Thereby more novel non-volatility memorizer is being stepped up to research and develop in main in the world semiconductor and information material factory commercial city.
The Re of perovskite structure 1-xA xMnO 3(Re=rare earth ion, A=alkaline-earth metal ions) material has obtained application in a lot of fields.The most important characteristic of this material is the giant magnetoresistance effect (CMR) that its resistance can change with externally-applied magnetic field.It is found that in recent years and utilize other outfields (electrostatic field, stress field etc.) also can realize Re 1-xA xMnO 3The transformation of material conduction state.The volatile storage that utilizes giant magnetic resistance to make can significantly improve the storage density and the reading speed of magnetic pipe recording material.Re 1-xA xMnO 3Though the electric conductivity of material can have tangible change with extraneous factors such as temperature, magnetic field and electric fields, after these extraneous excitaton sources disappeared, the electrical property of material will return to initial condition.For example: when strengthening magnetic field, the resistance of giant magnetic resistance reduces, and when magnetic field reduces or during vanishing, the resistance of giant magnetic resistance increases also and returns initial value, does not promptly have good retention performance.This is the reason of restriction giant magnetic resistance as non-volatility memorizer.The another one reason is: the change of the giant magnetic resistance conduction state only strong electrostatic field under high-intensity magnetic field (several tesla) or extremely low temperature could realize.People such as Liu (Appl.Phys.Lett., Vol.76,2000,2749-2451; US.Patent 6204139B1) finds under the condition in room temperature and zero outfield, to " hearth electrode-Pr in the recent period 0.7Ca 0.3MnO 3(PCMO)-and top electrode " material of structure applies electric pulse, and can make the resistance of material that reversible increase takes place or reduce.Wherein the difference between the numerical value of high resistance and low resistance attitude can reach 2-3 the order of magnitude.After the electric pulse that applies stops, the height after the variation, the low resistance saturated mode all has good retention performance.Thereby, utilize Re 1-xA xMnO 3The memory that the material of structure is made is a kind of novel, has the non-volatility memorizer of potential using value-based on the non-volatility memorizer (RRAM) of resistance variations.In the non-volatile RRAM memory of making, high-resistance state can be used to storage numeral " 1 ", and low resistance state can be used to store digital " 0 " accordingly.For device application, existing subject matter is: the variation that the switching between " 0 " and the one state can only depend on electric pulse polarity could realize.Promptly have only reverse electric pulse just device can be adjusted to high-resistance state (" 1 "), low resistance state (" 0 ") can only switch in the polarity with electric pulse under the condition of forward and just can realize.In some application-specific of device, the switching of carrying out electric pulse polarity is very inconvenient, also might influence the overall performance of device.
In sum, the variation that is difficult to make in some application-specific the electric pulse induced resistance possibility of reversal effect of perovskite-type material not only to depend on electric pulse polarity according to present technology could realize.Can seek a kind of new changing method, its resistance possibility of reversal effect can not only be displayed, and switching state not only is confined to the switching between " 0 "-one state but can carries out various states in " 0 "-" 1 "-" 0 "-" 1 " switch, will be significant to the application of this novel memory.
Summary of the invention
The purpose of this invention is to provide under a kind of room temperature non-volatility memorizer, changing method and preparation method based on resistance variations, because different now researchers there are differences " ON-OFF, switch, 0-1 " definition, it is 1 that the present invention defines high-impedance state (HRS), is " pass " (OFF) attitude; Low resistance state (LRS) is 0, is " opening " (ON) attitude.By " binode effect ", realize the method that device switches between multiple different " 0 "-one state by the size of regulating electric pulse voltage.Utilize this kind method, on same sample, need not commutation pulse polarity,, can realize " 1 "-" 0 "-" 1 " " 0 "-" 1 " and R by the initial state of default device 0" hearth electrode-Re has been expanded in the switching of-various states such as " 1 " greatly 1-xA xMnO 3-top electrode " structure is (for example with Pt-La 0.7Ca 0.3MnO 3(LCMO)-the Ag structure is an example) as the purposes of non-volatility memorizer.Following each step is specifically arranged:
1. the making of " binode "
The Re that is preparing 1-xA xMnO 3On (Re=rare earth ion La or Pr, A=alkaline-earth metal ions Ca or Ba, 0.05＜X＜0.95) film (thickness is 100 nanometers～1000 nanometers), make by certain regularly arranged top electrode array.The arrangement mode of the point in the top electrode array (size, spacing) can be determined according to the needs of stored information unit.For 2 A on the top electrode and B (A, B distance between two points greater than film thickness more than 5 times), connect plain conductor respectively.On hearth electrode, select 1 O, connect plain conductor.With O point and A, the resistance between 2 of the B is defined as R respectively OAAnd R OB, with A, the resistance between 2 of the B is defined as R AB, and the positive direction (+) of electric pulse and measuring current is defined as by A to B.
2. utilize the switching of conversion realization " the 0 "-one state of pulse voltage
By plain conductor A point and B point are applied electric pulse.In first circulation, apply direct impulse, and increase the pulse voltage that is applied gradually.Before pulse voltage reaches threshold value, R ABRemain unchanged always.When pulse voltage reaches threshold voltage, R ABBegin to reduce.When a certain voltage, reach and stablize saturated minimum (LRS).Continue to increase pulse voltage, R ABBegin to increase, when a certain voltage, reach and stablize saturated peak (HRS).Like this, use newly-designed " binode " resistance triggering mode, only need to increase pulse voltage, can realize R 0The switching of-" 0 "-one state.In second circulation, apply negative-going pulse (B → A), and by little to increasing pulse voltage greatly gradually, can observe R ABBe decreased to LRS by HRS before this, increased to the variation of HRS then gradually.Promptly in second circulation, only need to increase pulse voltage, realized the switching of " 1 "-" 0 "-one state.In circulation subsequently, with same method, can realize " 1 "-the repeatedly switching of " 0 "-one state.
3. the conversion of comprehensive utilization pulse polarity and voltage realizes the switching of multiple " 0 "-one state
At first, realize R OAAnd R OBPresetting of initial condition (" 0 " or " 1 ").The method that adopts mainly is divided into: preparation process preset preset two kinds with use.
The Pt-Re that is adopted in the present invention 1-xA xMnO 3In-Ag the sandwich structure, decision material system initial resistance (R 0) principal element be Re 1-xA xMnO 3The thickness of film and the crystalline state of film.Using PLD (pulsed laser deposition) legal system to be equipped with in the process of material, can be by the distance of control sedimentation time, target and substrate, technological parameters such as the frequency control film thickness of pulse; Controlling factors thin film crystallization states such as substrate temperature and aftertreatment technology during by the adjusting thin film deposition, thus the system that presets is in different initial states.By the initial resistance of control material, can adapt in the practical application device to the specific demand of material.After the device manufacturing is shaped, can utilize pulse polarity to adjust R in advance OAAnd R OBInitial condition (" 0 " or " 1 ").Like this when A and B being applied the polarity electric pulse different with voltage, R OA, R OBAnd R AB, can be combined into the switching of multiple different " 0 "-one state.The table 1 of description of drawings is listed in first circulation, possible state variation combination.
Described Pt-Re 1-xA xMnO 3-Ag sandwich foundation structure, Re is La or Pr in the formula, A is Ca or Ba, 0.05＜x＜0.95, concrete steps are:
(1) Re 1-xA xMnO 3The preparation of film target:
(a) select three kinds of powder of lanthanum acetate or praseodymium acetate, calcium acetate or barium acetate and manganese acetate for use, by the stoichiometric proportion mixing and place acetum, be heated to 100 ℃ of stirrings and make the mixed-powder dissolving form supersaturated solution;
(b) solution is warming up to 120 ℃, and lasting the stirring makes solution evaporation;
(c) powder of step (b) gained is ground after, compressing tablet also is warming up to 900-1200 ℃ with the speed of 3-20 ℃/min, insulation is cooled off after the solid phase reaction;
(d) will cool off the back block and pulverize, briquetting is prepared into film presoma target with discharge plasma sintering technique again, and process conditions are to pressurize along being parallel to the sense of current, and sintering condition 850-950 ℃ is incubated 10-30 minute.
(2) preparation of hearth electrode is the SiO that deposits 600nm on the single crystalline Si sheet of (100) orientation in advance 2With the Ti transition zone;
(3) on the hearth electrode of step (2) preparation, use the target material of step (1) preparation, adopt pulsed laser deposition technique to make Re 1-xA xMnO 3Film, Re is La or Pr in the formula, A is Ca or Ba, 0.05＜x＜0.95, process conditions are to be excitaton source with KrF, and the pulse wavelength is 248nm, and frequency is 5Hz, and underlayer temperature is 600 ℃, partial pressure of oxygen is 1 * 10 -4Torr;
(4) at Re 1-xA xMnO 3Preparation Ag top electrode on the film uses the silver slurry to be stained with the Au line as plain conductor respectively on Pt hearth electrode and Ag top electrode.
Table 1
Figure C20051002754900081
Description of drawings
Fig. 1 is the structural representation of non-volatility memorizer and " binode "
Fig. 2 is the electric impulse signal that applies and the graph of a relation of device ON-OFF
Fig. 3 is R in the binode structure OAInitial state low resistance state, R OBWhen initially also being low resistance state, binode R ABThe transformation diagram of " 0 "-" 1 " that shows
Fig. 4 is R in the binode structure OAInitial state low resistance state, R OBWhen being initially high-impedance state, binode R ABThe transformation diagram of " 1 "-" 0 "-" 1 " that shows
Table 1 is after presetting the initial resistance attitude, and in first circulation, the ON-OFF attitude that comprehensive utilization pulse voltage and polarity can realize changes type
Embodiment
Embodiment 1: the preparation of " Pt-LCMO-Ag " structure and the evaluation of resistance
Take by weighing chemical pure lanthanum acetate respectively, three kinds of powders of calcium acetate and manganese acetate are pressed Re 1-xA xMnO 3(stoichiometric proportion X=0.30) mixes and places acetum for Re=rare earth ion La or Pr, A=alkaline-earth metal ions Ca, is heated to 100 ℃, stirs to make the mixed-powder dissolving form supersaturated solution.Solution is warming up to 120 ℃, and lasting the stirring makes solvent evaporation.The powder that obtains carries out compressing tablet after grinding, and rises to 900 ℃ with the heating rate of 3 ℃/min, and is incubated 6 hours.After cooling, the block that obtains is pulverized, ground back and compressing tablet again.Utilize discharge plasma sintering technique (SPS) preparation film presoma target.Select for use in the SPS sintering process along the pressure of Z-direction (promptly being parallel to the sense of current) 13KN, sample is warming up to 850 ℃, and insulation 30min, be cooled to room temperature then, promptly obtain fine and close La 0.7Ca 0.3MnO 3(LCMO) target.On the single crystalline Si sheet of (100) orientation, deposit the SiO of 600nm in advance 2With the Ti transition zone, deposit the Pt layer of 300nm then with the method for sputter, as hearth electrode.Use above-mentioned prepared target, utilize the LCMO film of pulsed laser deposition (PLD) technology growth certain thickness (100 nanometers～1000 nanometers).Use the KrF excitaton source in the preparation process, the pulse wavelength is 248nm, and frequency is 5Hz, and underlayer temperature is 600 ℃, and partial pressure of oxygen is 1 * 10 -4Torr.On the LCMO film, prepare the Ag electrode of 0.5 * 0.5cm size as top electrode by certain arrangement mode.Use the silver slurry at last, on Pt hearth electrode and Ag top electrode, be stained with the Au line respectively.To applying electric pulse in " Pt-LCMO-Ag " loop that is constituted.The parameters of electric pulse is as follows: pulse duration (pulse width) 100ns, time of delay (delay time) 50ns, explosion time (burst time) 49.98 μ s.After pulse stops, the loop is applied the measuring current of 1 μ A, read the correspondent voltage value at the two ends, loop by constant-current source.Divided by 1 μ A, obtain the resistance in circuit value with magnitude of voltage.
Embodiment 2:R OAInitial state be low resistance state (" 0 "), R OBInitial state be low resistance state (" 0 ")
LCMO film with certain thickness (100 nanometers～1000 nanometers) is example (as shown in Figure 3).Before the switching, R OAAnd R OBInitial state all be low resistance state (" 0 "), R ABAlso be in low resistance state (" 0 ").To R ABApply direct impulse, and increase the magnitude of voltage of pulse gradually.Reaching before the voltage threshold R OA, R ABAnd R OBRemain unchanged.Reach after the voltage threshold R OAReducing more by a small margin arranged, but still remain on low resistance state.R OBSustainable growth, and reach the high resistant stable state.R ABIn this process, shown the transformation of " 0 "-" 1 ".
Embodiment 3:R OAInitial state be low resistance state (" 0 "), R OBInitial state be high-impedance state (" 1 ")
With certain thickness LCMO film is example (as shown in Figure 4).Before the switching, R OAInitial state be low resistance state (" 0 "), R OBInitial state be high-impedance state (" 1 "), R ABBe in high-impedance state (" 1 ").To R ABApply negative-going pulse, and increase the magnitude of voltage of pulse gradually.Reaching before the voltage threshold R OA, R ABAnd R OBRemain unchanged.Reach after the voltage threshold R OASustainable growth, and reach the high resistant stable state.R OBContinue to reduce to reach low resistance state.R ABIn this process, shown the transformation of " 1 "-" 0 "-" 1 ".
Embodiment 4: the preparation of " Pt-PCMO-Ag " structure and the evaluation of resistance
Adopt corresponding acetate, prepare Pr by chemical solution method similar to Example 1 0.7Ca 0.3MnO 3(PCMO) target also can adopt following solid reaction process to prepare the PCMO target, promptly takes by weighing chemical pure praseodymium oxide, mangano-manganic oxide and three kinds of powders of calcium carbonate respectively, presses Re 1- xA xMnO 3(Re=rare earth ion La or Pr, A=alkaline-earth metal ions Ca, X=0.30) stoichiometric proportion mixed grinding, and adopt ball mill to grind for a long time powder is mixed, the powder that obtains is carried out compressing tablet, heating rate with 20 ℃/min rises to 1200 ℃, and is incubated 24 hours and carries out solid phase reaction.After cooling, reacted block is pulverized, grind the back and again compressing tablet carry out 1200 ℃, 24 hours solid phase reaction once more.Then reacted block is pulverized, utilized discharge plasma sintering technique (SPS) preparation film presoma target.Select for use in the SPS sintering process along the pressure that is parallel to the Z-direction 13KN of the sense of current, sample is warming up to 950 ℃, and insulation 10min, be cooled to room temperature then, promptly obtain fine and close PCMO target.Si/SiO 2The preparation condition of the preparation method of/Ti substrate, Pt hearth electrode is with embodiment 1.Use above-mentioned prepared target, utilize the PCMO film of pulsed laser deposition (PLD) technology growth certain thickness (100 nanometers～1000 nanometers).Use the KrF excitaton source in the preparation process, pulse wavelength, frequency, underlayer temperature, partial pressure of oxygen are identical with embodiment 1.The connection of Au lead-in wire also is same as embodiment 1 on the preparation of Ag top electrode on the PCMO film and Pt hearth electrode, Ag top electrode.The preparation of " Pt-PCMO-Ag " structure is also identical with embodiment 1 with the evaluation method that electric pulse applies mode, impulsive condition selection, resistance.
Embodiment 5:R OAInitial state be low resistance state (" 0 "), R OBInitial state be low resistance state (" 0 ")
To " Pt-PCMO-Ag " structure, if before switching, the system that presets is in different initial states, i.e. R OAAnd R OBInitial state all be low resistance state (" 0 "), R ABAlso be in low resistance state (" 0 "), it is identical with embodiment 2 to switch rule when its electric pulse applies: to R ABApply direct impulse, and increase the magnitude of voltage of pulse gradually, reaching before the voltage threshold R OA, R ABAnd R OBRemain unchanged.Reach after the voltage threshold R OAReducing more by a small margin arranged, but still remain on low resistance state.R OBSustainable growth, and reach the high resistant stable state.R ABIn this process, shown the transformation of " 0 "-" 1 ".
Embodiment 6:R OAInitial state be low resistance state (" 0 "), R OBInitial state be high-impedance state (" 1 ")
To " Pt-PCMO-Ag " structure, if before switching, the system that presets is in different initial states, i.e. R OAInitial state be low resistance state (" 0 "), R OBInitial state be high-impedance state (" 1 "), R ABBe in high-impedance state (" 1 "), it is identical with embodiment 3 to switch rule when its electric pulse applies: to R ABApply negative-going pulse, and increase the magnitude of voltage of pulse gradually, reaching before the voltage threshold R OA, R ABAnd R OBRemain unchanged.Reach after the voltage threshold R OASustainable growth, and reach the high resistant stable state.R OBContinue to reduce to reach low resistance state.R ABIn this process, shown the transformation of " 1 "-" 0 "-" 1 ".

Claims (5)

1. changing method based on the on off state of the non-volatility memorizer of resistance variations, it is characterized in that can be by any one enforcement in following two kinds of methods:
(1) by plain conductor A point and B point are applied the forward electric pulse, and increase the pulse voltage that is applied gradually, before pulse voltage reaches threshold value, R ABRemain unchanged, when pulse voltage reaches threshold voltage, R ABBegin to reduce, when a certain voltage, reach and stablize saturated minimum LRS; Continue to increase pulse voltage, R ABBegin to increase, when a certain voltage, reach and stablize saturated peak HRS; So, use " binode " resistance triggering mode, only need to increase pulse voltage, can realize R 0The switching of-" 0 "-one state;
(2) by plain conductor A point and B point are applied the negative sense electric pulse, i.e. B → A, and by little to increasing pulse voltage, R greatly gradually ABBe decreased to and stablized saturated minimum LRS by stablizing saturated peak HRS before this, increased to the variation of HRS then gradually, and only needed to increase pulse voltage, realized " 1 "-conversion of " 0 "-one state;
Wherein, A, B are 2 points on the top electrode, and the resistance between 2 of A, the B is defined as R AB
2. by the changing method of the on off state of the described non-volatility memorizer based on resistance variations of claim 1, it is characterized in that utilizing the conversion of pulse polarity and voltage to realize the switching of multiple " 0 "-one state; R OAAnd R OBThe pre-setting method of initial condition is that preparation process presets or the presetting of use:
(1) R OAAnd R OBPreset initial state R is arranged O, R OLRS, LRS; LRS, HRS; In HRS, HRS or HRS, five kinds of forms of LRS any one;
(2) corresponding to R OAAnd R OBFive kinds of initial states, at R ABCorresponding five kinds of final state are respectively R during positive pulse O-1; 0-1; 1; 1 and 1-0-1;
(3) corresponding to R OAAnd R OBFive kinds of initial states, at R ABCorresponding five kinds of final state are respectively R during negative pulse O-1; 0-1; 1-0-1; 1 and 1;
R wherein OA, R OBBe resistance between A, the B on point of the O on the hearth electrode and the top electrode at 2.
3. by the changing method of the on off state of claim 1 or 2 described non-volatility memorizers based on resistance variations, it is characterized in that described electronic pulse width 100ns, time of delay 50ns.
4. by the changing method of the on off state of claim 1 or 2 described non-volatility memorizers based on resistance variations, it is characterized in that described resistance R AB, R OAOr R OBValue is by constant-current source the loop to be applied the measuring current of 1 μ A, reads the correspondent voltage value at two ends, with magnitude of voltage divided by 1 μ A electric current, the resistance value that draws.
5. the preparation method based on the non-volatility memorizer of resistance variations is characterized in that with Pt-Re 1- xA xMnO 3-Ag sandwich foundation structure is the base unit preparation, and Re is La or Pr in the formula, and A is Ca or Ba, 0.05＜x＜0.95, and concrete steps are:
(1) Re 1-xA xMnO 3The preparation of film target:
(a) selecting the acetate of lanthanum, praseodymium, calcium, barium or manganese for use is raw material, by the stoichiometric proportion mixing and place acetum, is heated to 100 ℃ of stirrings and makes the mixed-powder dissolving form supersaturated solution;
(b) solution is warming up to 120 ℃, and lasting the stirring makes solution evaporation;
(c) powder of step (b) gained is ground after, compressing tablet also is warming up to 900-1200 ℃ with the speed of 3-20 ℃/min, insulation is cooled off after the solid phase reaction;
(d) will cool off the back block and pulverize, briquetting is prepared into film presoma target with discharge plasma sintering technique again, and process conditions are to pressurize along being parallel to the sense of current, and sintering condition 850-950 ℃ is incubated 10-30 minute;
(2) preparation of hearth electrode is the SiO that deposits 600nm on the single crystalline Si sheet of (100) orientation in advance 2With the Ti transition zone; Deposition Pt layer forms hearth electrode on transition zone;
(3) on the hearth electrode of step (2) preparation, use the target material of step (1) preparation, adopt pulsed laser deposition technique to make Re 1-xA xMnO 3Film, Re is La or Pr in the formula, A is Ca or Ba, 0.05＜x＜0.95, process conditions are to be excitaton source with KrF, and the pulse wavelength is 248nm, and frequency is 5Hz, and underlayer temperature is 600 ℃, partial pressure of oxygen is 1 * 10 -4Torr;
(4) at Re 1-xA xMnO 3Preparation Ag top electrode on the film uses the silver slurry to be stained with the Au line as plain conductor respectively on Pt hearth electrode and Ag top electrode.
CNB2005100275490A 2005-07-06 2005-07-06 Non-volatility memory, switching method and preparing method based on resistance change Expired - Fee Related CN100409444C (en)

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CN101847688B (en) * 2010-04-29 2012-07-04 北京大学 Method for decreasing discreteness of resistance value of resistance change memory
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
US6469927B2 (en) * 2000-07-11 2002-10-22 Integrated Magnetoelectronics Magnetoresistive trimming of GMR circuits
US20040233708A1 (en) * 2003-05-21 2004-11-25 Sharp Laboratories Of America, Inc. Asymmetric memory cell
CN1604228A (en) * 2004-10-29 2005-04-06 北京科技大学 Magnetic random memory storing unit with low write-in current characteristic and method for making same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
US6469927B2 (en) * 2000-07-11 2002-10-22 Integrated Magnetoelectronics Magnetoresistive trimming of GMR circuits
US20040233708A1 (en) * 2003-05-21 2004-11-25 Sharp Laboratories Of America, Inc. Asymmetric memory cell
CN1604228A (en) * 2004-10-29 2005-04-06 北京科技大学 Magnetic random memory storing unit with low write-in current characteristic and method for making same

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