CN100412950C - 磁盘装置 - Google Patents
磁盘装置 Download PDFInfo
- Publication number
- CN100412950C CN100412950C CNB2003801050328A CN200380105032A CN100412950C CN 100412950 C CN100412950 C CN 100412950C CN B2003801050328 A CNB2003801050328 A CN B2003801050328A CN 200380105032 A CN200380105032 A CN 200380105032A CN 100412950 C CN100412950 C CN 100412950C
- Authority
- CN
- China
- Prior art keywords
- layer
- antiferromagnetism
- rotary valve
- film
- responding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
Abstract
Description
表面处理时间(秒) | 无退火处理MR(%) | 有退火处理MR(%) |
0 | 9.4 | 14.09 |
60 | 13.54 | 17.47 |
80 | 13.96 | 17.05 |
150 | 14.94 | 17.65 |
300 | 14.43 | 18.13 |
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002354064 | 2002-12-05 | ||
JP354064/2002 | 2002-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1720571A CN1720571A (zh) | 2006-01-11 |
CN100412950C true CN100412950C (zh) | 2008-08-20 |
Family
ID=32463324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801050328A Expired - Fee Related CN100412950C (zh) | 2002-12-05 | 2003-11-28 | 磁盘装置 |
Country Status (4)
Country | Link |
---|---|
US (4) | US7312958B2 (zh) |
JP (1) | JPWO2004051629A1 (zh) |
CN (1) | CN100412950C (zh) |
WO (1) | WO2004051629A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7312958B2 (en) * | 2002-12-05 | 2007-12-25 | Matsushita Electric Industrial Co., Ltd | Method for manufacturing magnetic disk apparatus |
US7495871B1 (en) * | 2005-07-26 | 2009-02-24 | Storage Technology Corporation | Top formed grating stabilizer |
US7978439B2 (en) * | 2007-06-19 | 2011-07-12 | Headway Technologies, Inc. | TMR or CPP structure with improved exchange properties |
US7999336B2 (en) * | 2008-04-24 | 2011-08-16 | Seagate Technology Llc | ST-RAM magnetic element configurations to reduce switching current |
US9190081B2 (en) | 2014-02-28 | 2015-11-17 | HGST Netherlands B.V. | AF-coupled dual side shield reader with AF-coupled USL |
CN106030840B (zh) * | 2014-03-25 | 2019-03-01 | 英特尔公司 | 磁畴壁逻辑器件及互连 |
US9099120B1 (en) | 2014-04-09 | 2015-08-04 | HGST Netherlands, B.V. | Interlayer coupling field control in tunneling magnetoresistive read heads |
US9196272B1 (en) | 2014-10-27 | 2015-11-24 | Seagate Technology Llc | Sensor structure having increased thermal stability |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6277505B1 (en) * | 1999-01-21 | 2001-08-21 | Read-Rite Corporation | Read sensor with improved thermal stability and manufacturing method therefor |
JP2002076474A (ja) * | 2000-06-05 | 2002-03-15 | Read Rite Corp | 自由層と境界を接する超薄酸化物を有する鏡面巨大磁気抵抗ヘッド |
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US5206590A (en) | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
JPH0595208A (ja) | 1991-03-06 | 1993-04-16 | Minnesota Mining & Mfg Co <3M> | フイルムキヤリア |
US5422571A (en) | 1993-02-08 | 1995-06-06 | International Business Machines Corporation | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
JP3306996B2 (ja) | 1993-06-02 | 2002-07-24 | セイコーエプソン株式会社 | フレキシブル基板の製造方法 |
JPH10183347A (ja) * | 1996-12-25 | 1998-07-14 | Ulvac Japan Ltd | 磁気抵抗ヘッド用成膜装置 |
JPH10188234A (ja) * | 1996-12-25 | 1998-07-21 | Ulvac Japan Ltd | 磁気抵抗ヘッド素子の製造方法 |
EP0971380A4 (en) * | 1997-03-28 | 2000-06-28 | Migaku Takahashi | MANUFACTURING METHOD OF A MAGNETIC RESISTANCE ELEMENT |
EP1134815A3 (en) * | 1997-09-29 | 2001-10-31 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, and method for producing the same |
US6063244A (en) * | 1998-05-21 | 2000-05-16 | International Business Machines Corporation | Dual chamber ion beam sputter deposition system |
JP3234814B2 (ja) | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
JP2000268330A (ja) | 1999-03-15 | 2000-09-29 | Victor Co Of Japan Ltd | 磁気抵抗効果型薄膜磁気ヘッドの製造方法 |
US6331773B1 (en) * | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
US6428657B1 (en) * | 1999-08-04 | 2002-08-06 | International Business Machines Corporation | Magnetic read head sensor with a reactively sputtered pinning layer structure |
WO2001024170A1 (fr) * | 1999-09-29 | 2001-04-05 | Fujitsu Limited | Tete a effet de resistance magnetique et dispositif de reproduction d'informations |
JP2001207257A (ja) | 2000-01-24 | 2001-07-31 | Matsushita Electric Ind Co Ltd | Gmr膜の製造方法及び製造装置 |
JP2001283413A (ja) | 2000-03-29 | 2001-10-12 | Tdk Corp | スピンバルブ膜の製造方法 |
US6700753B2 (en) * | 2000-04-12 | 2004-03-02 | Seagate Technology Llc | Spin valve structures with specular reflection layers |
US6306266B1 (en) * | 2000-05-17 | 2001-10-23 | International Business Machines Corporation | Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance |
JP2001352112A (ja) * | 2000-06-07 | 2001-12-21 | Matsushita Electric Ind Co Ltd | 磁気抵抗効果素子及び磁気抵抗効果型ヘッド |
JP2002007674A (ja) | 2000-06-26 | 2002-01-11 | Nec Corp | 問い合わせ・回答システムおよび問い合わせ・回答処理方法 |
JP2002026055A (ja) | 2000-07-12 | 2002-01-25 | Seiko Epson Corp | 半導体装置及びその製造方法 |
US6661622B1 (en) * | 2000-07-17 | 2003-12-09 | International Business Machines Corporation | Method to achieve low and stable ferromagnetic coupling field |
US6413380B1 (en) * | 2000-08-14 | 2002-07-02 | International Business Machines Corporation | Method and apparatus for providing deposited layer structures and articles so produced |
JP3559513B2 (ja) | 2000-09-05 | 2004-09-02 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法及び製造装置並びに磁気再生装置 |
US6853520B2 (en) * | 2000-09-05 | 2005-02-08 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
JP2002092829A (ja) | 2000-09-21 | 2002-03-29 | Fujitsu Ltd | 磁気抵抗センサ及び磁気抵抗ヘッド |
JP2002198584A (ja) * | 2000-12-26 | 2002-07-12 | Sony Corp | スピンバルブ膜の製造方法及び磁気抵抗効果型磁気ヘッドの製造方法 |
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US7312958B2 (en) * | 2002-12-05 | 2007-12-25 | Matsushita Electric Industrial Co., Ltd | Method for manufacturing magnetic disk apparatus |
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US7256971B2 (en) * | 2004-03-09 | 2007-08-14 | Headway Technologies, Inc. | Process and structure to fabricate CPP spin valve heads for ultra-high recording density |
US7211447B2 (en) * | 2005-03-15 | 2007-05-01 | Headway Technologies, Inc. | Structure and method to fabricate high performance MTJ devices for MRAM applications |
-
2003
- 2003-11-28 US US10/535,994 patent/US7312958B2/en not_active Expired - Fee Related
- 2003-11-28 WO PCT/JP2003/015300 patent/WO2004051629A1/ja active Application Filing
- 2003-11-28 CN CNB2003801050328A patent/CN100412950C/zh not_active Expired - Fee Related
- 2003-11-28 JP JP2004556866A patent/JPWO2004051629A1/ja active Pending
-
2007
- 2007-10-30 US US11/928,473 patent/US7463458B2/en not_active Expired - Fee Related
- 2007-10-30 US US11/928,342 patent/US7542247B2/en not_active Expired - Fee Related
-
2008
- 2008-10-27 US US12/289,380 patent/US7733613B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6277505B1 (en) * | 1999-01-21 | 2001-08-21 | Read-Rite Corporation | Read sensor with improved thermal stability and manufacturing method therefor |
JP2002076474A (ja) * | 2000-06-05 | 2002-03-15 | Read Rite Corp | 自由層と境界を接する超薄酸化物を有する鏡面巨大磁気抵抗ヘッド |
Also Published As
Publication number | Publication date |
---|---|
US7312958B2 (en) | 2007-12-25 |
US7542247B2 (en) | 2009-06-02 |
US7463458B2 (en) | 2008-12-09 |
JPWO2004051629A1 (ja) | 2006-04-06 |
US20060072250A1 (en) | 2006-04-06 |
US20090104345A1 (en) | 2009-04-23 |
CN1720571A (zh) | 2006-01-11 |
WO2004051629A1 (ja) | 2004-06-17 |
US20080068763A1 (en) | 2008-03-20 |
US20080055785A1 (en) | 2008-03-06 |
US7733613B2 (en) | 2010-06-08 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PANASONIC HEALTHCARE + MEDICAL EQUIPMENT CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20140522 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20140522 Address after: Ehime Prefecture, Japan Patentee after: Panasonic Healthcare Co., Ltd Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080820 Termination date: 20141128 |
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