CN100416321C - Three-dimensional photonic crystal and functional device including the same - Google Patents
Three-dimensional photonic crystal and functional device including the same Download PDFInfo
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- CN100416321C CN100416321C CNB2006101429734A CN200610142973A CN100416321C CN 100416321 C CN100416321 C CN 100416321C CN B2006101429734 A CNB2006101429734 A CN B2006101429734A CN 200610142973 A CN200610142973 A CN 200610142973A CN 100416321 C CN100416321 C CN 100416321C
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Abstract
A three-dimensional photonic crystal of the present invention has a complete photonic band gap in a wide wavelength region and that can be easily produced. A three-dimensional photonic crystal in which a plurality of layers including a periodic-refractive-index structure are periodically stacked includes, a first layer having holes provided at lattice points of a first rectangular lattice and a second rectangular lattice, a second layer having columnar structures at lattice points of a face-centered rectangular lattice, a third layer having a periodic structure the same as that of the first layer and disposed at a shifted position, and a fourth layer having a periodic structure the same as that of the second layer.
Description
Technical field
The present invention relates to comprise three-dimensional photon (photonic) crystal and the function element that comprises described three-D photon crystal, for example optical waveguide, optical resonator, optical filter and the polarizer of three-dimensional refractive index periodic structure.
Background technology
Yablonovitch has proposed such conception of species, that is, can use less than described electromagnetic transmission of the structure control of electromagnetic wavelength and reflection characteristic (Physical Review Letters rolls up 58, the 2059 pages, 1987).According to the document, can use less than the periodic structure of wavelength and control electromagnetic transmission and reflection characteristic.
Particularly, when electromagnetic wavelength is reduced to about wavelength of visible light, visible optical transmission of may command and reflection characteristic.A kind of like this structure is called as photonic crystal.Proposed to produce the catoptron that in particular wavelength region, has 100% reflectivity.
Therefore, contrast, can realize therein can being called photon band gap near the particular range of wavelengths of 100% reflectivity with energy gap in the semiconductor.
In addition, three-dimensional meticulous periodic structure can provide the photon band gap at the incident light that comes from any direction.Be referred to as complete photonic band gap hereinafter.
Complete photonic band gap can have various application (for example, the spontaneous emission in the minimizing luminescent device).Can in wideer wavelength region may, obtain the operational wavelength region that the structure of complete photonic band gap can help to extend described function element.
Some structures (for example, see U.S. Patent No. 5,335,240, U.S. Patent No. 5,440,421 and U.S. Patent No. 6,597,851) of complete photonic band gap have been proposed to have.
Figure 14 A shows U.S. Patent No. 5,335, the rollway shape structure that proposes in 240.In this structure, piling up has a plurality of column structures that be arranged in parallel, and every layer arrangement is rotated 90 degree with respect to adjacent layer.
Figure 14 B has shown U.S. Patent No. 5,440, the synoptic diagram of the structure of the photon band gap that discloses in 421.In this structure, formed a plurality of holes along direction perpendicular to a plurality of column structures, described a plurality of column structures are arranged parallel to each other so that the part of column structure overlaps along stacking direction.
Figure 14 C has shown U.S. Patent No. 6,597, the synoptic diagram of the structure of the photon band gap that discloses in 851.In this structure, has the hole that provides with the triangular lattice form and the layer of the column structure that provides with the triangular lattice form piles up in the mode of the skew that had for 1/3 basic cycle between adjacent layer.
In U.S. Patent No. 5,335, in the rollway shape structure that discloses in 240,, therefore described simple in structure and be easy to make because four layers constitute one-periods.Yet described structure has strong anisotropy, thereby causes the strong directional dependence of photon band gap.
U.S. Patent No. 5,440, the structure that discloses in 421 also has complete photonic band gap.Yet, must form a plurality of very dark holes, and to make described structure be unusual difficulty.
U.S. Patent No. 6,597, the structure that discloses in 851 have than the little anisotropy of rollway shape structure and have relatively large photon band gap.Yet, because six layers of formation one-period, so the manufacturing process complexity, for example, for the arrangement of layer, need pinpoint accuracy.Therefore, be difficult to make described structure.
Summary of the invention
Therefore, the invention provides a kind of three-D photon crystal that in wide wavelength region may, has complete photonic band gap and can easily make.The present invention also provides a kind of function element that comprises this three-D photon crystal.
According to three-D photon crystal of the present invention, periodically having piled up a plurality of layers the three-D photon crystal that comprises the periodic refractive index structure comprises: the ground floor with periodic structure, in the periodic structure of ground floor, along first cycle in the direction in the face of layer be A and be the lattice-site place of the first rectangle lattice of B along second cycle perpendicular to first in the direction in the face of layer, and be located at respect to the position of the first rectangle lattice and be provided with the hole that is filled with second medium along the first axle offset A/2 and along the lattice-site place of the second rectangle lattice of the position of the second axle offset B/4, and the zone except that the hole is filled with first medium; The second layer with periodic structure, in the periodic structure of the second layer, be provided with at the lattice-site place of the center of area (face-centered) rectangle lattice by the 3rd medium and constitute and have along the column structure of the longitudinal axis of stacking direction, and the zone except that column structure is filled with second medium, described center of area rectangle lattice is located at respect to the position along second axle offset+3B/8, the position of the first rectangle lattice, and is A and be B along cycle of second along cycle of first; The 3rd layer, have be included in ground floor in periodic structure identical and be arranged on respect to the position that is included in the periodic structure in the ground floor in the face of layer in the direction along the first axle offset A/2 and along the periodic structure of the position of the second axle offset B/2; And the 4th layer, have be included in the second layer in periodic structure identical and be arranged in the face of layer in the direction periodic structure of the position identical with being included in periodic structure in the second layer.In this three-D photon crystal, ground floor, the second layer, the 3rd layer and the 4th layer periodically pile up successively, and the refractive index of first medium and the 3rd medium is all greater than the refractive index of second medium.
From following description (with reference to accompanying drawing), can understand other features of the present invention for exemplary embodiment.
Description of drawings
Fig. 1 is the synoptic diagram of three-D photon crystal according to an embodiment of the invention.
Fig. 2 A is every layer a synoptic diagram according to the three-D photon crystal of first embodiment of the invention to 2D.
Fig. 3 is the synoptic diagram according to the photon band structure of the three-D photon crystal of first embodiment of the invention.
Fig. 4 A is every layer a synoptic diagram according to the three-D photon crystal of second embodiment of the invention to 4D.
Fig. 5 is the synoptic diagram according to the photon band structure of the three-D photon crystal of second embodiment of the invention.
Fig. 6 A is the synoptic diagram according to another second layer of the three-D photon crystal of second embodiment of the invention.
Fig. 6 B is the synoptic diagram according to another second layer of the three-D photon crystal of second embodiment of the invention.
Fig. 7 A is the synoptic diagram according to another second layer of the three-D photon crystal of second embodiment of the invention.
Fig. 7 B is the synoptic diagram according to another second layer of the three-D photon crystal of second embodiment of the invention.
Fig. 8 A is every layer a synoptic diagram according to the three-D photon crystal of third embodiment of the invention to 8D.
Fig. 9 A shows the cross-sectional view of making the method for three-D photon crystal according to fourth embodiment of the invention to 9I.
Figure 10 is the cross-sectional view according to the three-D photon crystal of fourth embodiment of the invention.
Figure 11 A shows the cross-sectional view of making the method for three-D photon crystal according to fifth embodiment of the invention to 11K.
Figure 12 is the cross-sectional view according to the three-D photon crystal of fifth embodiment of the invention.
Figure 13 A is a cross-sectional view according to the function element that comprises three-D photon crystal of sixth embodiment of the invention to 13C.
Figure 14 A shows the view of known three-D photon crystal to 14C.
Embodiment
Fig. 1 is the synoptic diagram of the relevant portion of three-D photon crystal according to an embodiment of the invention.In Fig. 1, layer 110 to 140 direction of piling up that constitute three-D photon crystal are restricted to the z axle, and perpendicular to the z axle and be that the direction of direction in the face of layer is restricted to the x axle, the direction perpendicular to the x axle in the plane of layer is restricted to the y axle.In three-D photon crystal, each layer all has four layer 110 of periodic refractive index structure to 140 basic cycles that form together on the stacking direction.A plurality of basic cycles are stacked, thereby form three-D photon crystal.
First embodiment
Fig. 2 A is every layer synoptic diagram of the three-D photon crystal of first embodiment of the invention to 2D.Each figure shows in the layer 110 to 140 one the part of x-y xsect respectively.
Fig. 2 A is the x-y cross-sectional view of ground floor 110.In Fig. 2 A, the cycle of rectangle lattice 111 on the x direction of principal axis is that A and cycle on the y direction of principal axis are B.Rectangle lattice 113 has the shape identical with rectangle lattice 111 and is arranged on respect to the position of rectangle lattice 111 along x direction of principal axis skew A/2 and along the position of y direction of principal axis skew B/4.Ground floor 110 has the periodic refractive index structure that is limited by two rectangle lattices 111 and 113.More particularly, radius is that R1 and circular port 112 and the circular port 114 that is filled with second medium (having low-refraction N2) are arranged on each lattice-site of rectangle lattice 111 and rectangle lattice 113.Zone except that circular port 112 and circular port 114 is filled with first medium (having high index of refraction N1).
Fig. 2 B is the x-y cross-sectional view of the second layer 120.The second layer 120 shown in Fig. 2 B has the periodic refractive index structure that is limited by center of area rectangle lattice 121, and the cycle of center of area rectangle lattice 121 on the x direction of principal axis is that A and cycle on the y direction of principal axis are B.Center of area rectangle lattice 121 has the shape identical with rectangle lattice 111 in the ground floor 110 and is arranged on respect to the position along y direction of principal axis skew+3B/8, the position of rectangle lattice 111.The column structure (for example, six prisms 122) that has along the axial longitudinal axis of z is arranged on the lattice-site of center of area rectangle lattice 121.Zone except that column structure 122 is filled with second medium.Column structure 122 is that the circumscribed circle of R2 limits and made by the 3rd medium (having high index of refraction N3) by radius.Each column structure 122 in the second layer 120 is arranged on such position, in this position with ground floor 110 in the distance in adjacent circular hole equal with the 3rd layer 130 in the distance in adjacent circular hole.
Fig. 2 C is the 3rd layer 130 an x-y cross-sectional view.In Fig. 2 C, rectangle lattice 131 and rectangle lattice 133 are arranged on respectively with respect to the position of rectangle lattice 111 in the ground floor 110 and rectangle lattice 113 along x direction of principal axis skew A/2 and along the position of y direction of principal axis skew B/2.Radius is that R1 and the circular port 132 that is filled with second medium and circular port 134 are arranged on each lattice-site of rectangle lattice 131 and rectangle lattice 133.Zone except that circular port 132 and circular port 134 is filled with first medium.
Fig. 2 D is the 4th layer 140 an x-y cross-sectional view.The 4th layer 140 shown in Fig. 2 D has the periodic refractive index structure that is limited by center of area rectangle lattice 141, and center of area rectangle lattice 141 is arranged on along the identical position of the center of area rectangle lattice in x and y direction and the second layer 120 141.The column structure 142 that is made of first medium is arranged on each lattice-site of center of area rectangle lattice 141.Zone 143 except that column structure 142 is filled with second medium.
In first embodiment, make following parameter optimization to provide complete photonic band gap in desired frequency (wavelength) zone, described parameter is: the radius R 2 of the circumscribed circle of six prisms in the radius R 1 of the circular port in refractive index N1, the N2 of first medium, second medium and the 3rd medium and N3, ground floor 110 and the 3rd layer 130, the second layer 120 and the 4th layer 140, thickness and the lattice period A and the B of layer 110 to 140.
Table 1 shows the example of these parameters.Fig. 3 shows the photon band structure of the three-D photon crystal shown in the table 1 that calculates by the plane wave expansion method.
Horizontal ordinate is represented wave number vector,, incides the electromagnetic incident direction on the photonic crystal that is.For example, some K represents to be parallel to the wave number vector of z axle, and some X is illustrated in the wave number vector that has 45 ° of gradients with respect to z axle (or x axle) in the x-z plane.Ordinate is represented by the normalized frequency of lattice period A (normalized frequency).Zone, regardless of the incident direction of light, all can not there be light, thereby forms complete photonic band gap by the normalized frequency of the normalized frequency to 0.48 of the scope shown in the shade among Fig. 3 from 0.44.When the center of complete photonic band gap (normalization) frequency by ω
0Expression, and (normalization) frequency bandwidth of complete photonic band gap is when being represented by Δ ω, the complete photonic band gap ratio Δ ω/ω in this structure
0Be 0.082.This numerical value is approximately 1.2 times of complete photonic band gap ratio of the rollway structure that is made of the medium with identical refractive index (refractive index that constitutes the medium of rectangular column is 2.4, and to remove rectangular column be 1.0 with the refractive index of the medium of exterior domain and constitute).
As the concrete example of the structure with parameter shown in the table 1, when lattice period A was 250nm, radius R 1 was 353.6nm for 107.5nm, radius R 2 for 65nm, lattice period B, and thickness H1 is 77.5nm, and thickness H2 is 47.5nm.This structure has the complete photonic band gap centre wavelength of 543.3nm and the 522.0nm complete photonic band gap wavelength region may to 566.5nm.
In three-D photon crystal, as shown in Fig. 2 A and 2C, more crooked than rollway structure by the zone that high index of refraction (N1) medium that extends along the x axle forms according to first embodiment.This bending increased in each layer and structure the layer between isotropy.This helps to be created in the standing wave that has concentrated energy in high index of refraction (N1) medium in the electromagnetic wave of propagating along the x axle.In addition, the outshot in the bending has also increased this structure along inclined direction isotropy on the yz cross section, as shown in Fig. 2 A and the 2C.This helps to be created in the standing wave that has concentrated energy in the medium with low-refraction.This has increased and mainly concentrates on the standing wave in the high refractive index medium and mainly concentrate on the difference on energy between the standing wave in the low refractive index dielectric.The energy difference of this increase can be widened the frequency band that obtains complete photonic band gap.
In order to obtain above-mentioned effect, though in first embodiment, use six prisms 142 in the 4th layer 140 shown in six in the second layer 120 shown in Fig. 2 B prismatic 122 and Fig. 2 D, but also can use the post except that six prisms as an alternative, for example polygon prism, cylinder or cylindroid.
Table 1
Aforesaid, in this embodiment, the layer with periodic refractive index structure is stacked to form photonic crystal.The part that can comprise this stacked structure according to the three-D photon crystal of first embodiment.
The hole that forms in ground floor 110 and the 3rd layer 130 has cross section at least one face of selecting from circular, ellipse and polygon.
Second embodiment
Fig. 4 A is every layer synoptic diagram of the three-D photon crystal of second embodiment of the invention to 4D.
Fig. 4 A is the x-y cross-sectional view of ground floor 510.In Fig. 4 A, the cycle of rectangle lattice 511 on the x direction of principal axis is that A and cycle on the y direction of principal axis are B.Rectangle lattice 513 has the shape identical with rectangle lattice 511 and is arranged on respect to the position of rectangle lattice 511 along x direction of principal axis skew A/2 and along the position of y direction of principal axis skew B/4.Ground floor 510 has the periodic refractive index structure that is limited by two rectangle lattices 511 and 513.More particularly, radius is that R1 and circular port 512 and the circular port 514 that is filled with second medium (having low-refraction N2) are arranged on each lattice-site of rectangle lattice 511 and rectangle lattice 513.Zone except that circular port 512 and circular port 514 is filled with first medium (having high index of refraction N1).
Fig. 4 C is the 3rd layer 530 an x-y cross-sectional view.In Fig. 4 C, rectangle lattice 531 and rectangle lattice 533 are arranged on respectively with respect to the position of rectangle lattice 511 in the ground floor 510 and rectangle lattice 513 along x direction of principal axis skew A/2 and along the position of y direction of principal axis skew B/2.Radius is that R1 and the circular port 532 that is filled with second medium and circular port 534 are arranged on each lattice-site of rectangle lattice 531 and rectangle lattice 533.Zone except that circular port 532 and circular port 534 is filled with first medium.
Fig. 4 B is the x-y cross-sectional view of the second layer 520.In Fig. 4 B, rectangle lattice 521 and 523 be arranged on ground floor 510 in rectangle lattice 511 and 513 identical lateral position.Radius is that the circular port 522 and 524 of R2 is arranged on the lattice-site place of rectangle lattice 521 and rectangle lattice 523 and is filled with second medium.
Fig. 4 D is the 4th layer 540 an x-y cross-sectional view.Comprise for the 4th layer 540 have with the second layer 520 in the circular port that forms 522,524,526 and 528 identical shaped and be arranged on the circular port 542,544,546 and 548 of the lateral position identical with these circular ports.Circular port 542,544,546 and 548 is filled with the medium identical with circular port 522,524,526 and 528.
Zone in the 4th layer 540 except that circular port 542,544,546 and 548 is filled with the 3rd medium (having high index of refraction N3).
In a second embodiment, the column structure in the second layer shown in Fig. 4 B and the 4D 520 and the 4th layer 540 forms as described as follows.
The lattice-site place that the second layer 520 is included in rectangle lattice 521,523,525 and 527 is filled with the hole of second medium.
Identical in column structure in the 4th layer 540 and the second layer 520.
In a second embodiment, make following parameter optimization to provide complete photonic band gap in desired frequency zone (wavelength region may), described parameter is: the radius R 2 of the circular port in the radius R 1 of the circular port in refractive index N1, the N2 of first medium, second medium and the 3rd medium and N3, ground floor 510 and the 3rd layer 530, the second layer 520 and the 4th layer 540, thickness and the lattice period A and the B of layer 510 to 540.
Table 2 shows the example of these parameters.Fig. 5 shows the photon band structure of the three-D photon crystal shown in the table 2 that calculates by the plane wave expansion method.
In the dash area normalization frequency band shown in Fig. 5, formed complete photonic band gap.The complete photonic band gap ratio Δ ω/ω of this structure
0Be 0.092.
This numerical value is approximately 1.3 times of complete photonic band gap ratio of the rollway structure that is made of the medium with identical refractive index (refractive index that constitutes the medium of rectangular column is 2.4, and to remove rectangular column be 1.0 with the refractive index of the medium of exterior domain and constitute).
Therefore, the column structure that is formed by the hole in the second layer 520 and the 4th layer 540 has the isotropy of higher degree.
Although only periodically piling up, four basic layers also can obtain wideer photon band gap to form photonic crystal.
In a second embodiment, limit column structure by in the second layer 520 and the 4th layer 540, forming circular port.As shown in Figure 6A and 6B, can replace the second layer 520 uses slotted eye to obtain identical effect with circular port in the 4th layer 540.Perhaps, as shown in Figure 7A and 7B, the circular port that can replace in the second layer 520 and the 4th layer 540 uses polygonal hole (for example, hexagonal hole or octagon hole) to obtain identical effect.
Photon band structure by the three-D photon crystal shown in the plane wave expansion method reckoner 3.The complete photonic band gap ratio Δ ω/ω of this structure
0Be 0.230.
This numerical value is approximately 1.3 times of complete photonic band gap ratio of the rollway structure that is made of the medium with identical refractive index (refractive index that constitutes the medium of rectangular column is 3.3, and to remove rectangular column be 1.0 with the refractive index of the medium of exterior domain and constitute).
Therefore, even when the medium that forms three-D photon crystal has different refractive indexes, also can obtain effect of the present invention.
Although only periodically piling up, four basic layers also can obtain wideer photon band gap to form photonic crystal.
Photon band structure by the three-D photon crystal shown in the plane wave expansion method reckoner 4.The complete photonic band gap ratio Δ ω/ω of this structure
0Be 0.119.
As the refractive index N3 of the 3rd medium during greater than the refractive index N1 of first medium, the contrast ratio of refractive index increases.This has increased and concentrates on the standing wave in the high refractive index medium and concentrate on the difference on energy between the standing wave in the low refractive index dielectric.The energy difference of this increase can be widened the frequency band that obtains complete photonic band gap.
Though the refractive index N1 of first medium is less than the refractive index N3 of the 3rd medium in table 4, the refractive index N1 of first medium also can be greater than the refractive index N3 of the 3rd medium to obtain identical effect.
Table 2
Table 3
Table 4
The 3rd embodiment
Fig. 8 A is every layer synoptic diagram of the three-D photon crystal of third embodiment of the invention to 8D.
Fig. 8 A is the x-y cross-sectional view of ground floor 910.In Fig. 8 A, the cycle of rectangle lattice 911 on the x direction of principal axis is that A and cycle on the y direction of principal axis are B.Rectangle lattice 913 has the shape identical with rectangle lattice 911 and is arranged on respect to the position of rectangle lattice 911 along x direction of principal axis skew A/2 and along the position of y direction of principal axis skew B/4.Ground floor 910 has the periodic refractive index structure that is limited by two rectangle lattices 911 and 913.More particularly, the major radius that is filled with second medium (having low-refraction N2) is that R1a and short radius are that the slotted eye 912 of R1b and major radius are that R1a and short radius are that the slotted eye 914 of R1b is arranged on each lattice-site of rectangle lattice 911 and rectangle lattice 913.Zone except that slotted eye 912 and slotted eye 914 is filled with first medium (having high index of refraction N1).
Fig. 8 C is the 3rd layer 930 an x-y cross-sectional view.In Fig. 8 C, rectangle lattice 931 and rectangle lattice 933 are arranged on respectively with respect to the position of rectangle lattice 911 in the ground floor 910 and rectangle lattice 913 along x direction of principal axis skew A/2 and along the position of y direction of principal axis skew B/2.Major radius is that R1a and short radius are the lattice-site place that the slotted eye 932 and 934 of R1b is arranged on rectangle lattice 931 and rectangle lattice 933.Slotted eye 932 and 934 is filled with second medium.
Zone in the 3rd layer 930 except that slotted eye 932 and 934 is filled with first medium (having high index of refraction N1).
Fig. 8 B is the x-y cross-sectional view of the second layer 920. Rectangle lattice 921 and 923 be arranged on ground floor 910 in rectangle lattice 911 and 913 identical lateral position.Radius is that the circular port 922 and 924 of R2 is arranged on the lattice-site place of rectangle lattice 921 and 923 and is filled with second medium.
Fig. 8 D is the 4th layer 940 an x-y cross-sectional view.Comprise for the 4th layer 940 have with the second layer 920 in the circular port that forms 922,924,926 and 928 identical shaped and be arranged on the circular port 942,944,946 and 948 of the lateral position identical with these circular ports.Circular port 942,944,946 and 948 is filled with the medium identical with circular port 922,924,926 and 928.
Zone in the 4th layer 940 except that circular port 942,944,946 and 948 is filled with the 3rd medium (having high index of refraction N3).
In the 3rd embodiment, make following parameter optimization to provide complete photonic band gap in desired frequency (wavelength) zone, described parameter is: the radius R 2 of the circular port in the major radius R1a of the slotted eye in refractive index N1, the N2 of first medium, second medium and the 3rd medium and N3, ground floor 910 and the 3rd layer 930 and short radius R1b, the second layer 920 and the 4th layer 940, thickness and the lattice period A and the B of layer 910 to 940.
Photon band structure by the three-D photon crystal shown in the plane wave expansion method reckoner 5.The complete photonic band gap ratio Δ ω/ω of this structure
0Be 0.092.
These results illustrate, and when the refractive index cycle structure in ground floor 910 and the 3rd layer 930 was formed by slotted eye, complete photonic band gap also demonstrated less anisotropy.Although only periodically piling up, four basic layers also can obtain wideer photon band gap to form photonic crystal.
In order to obtain above-mentioned effect,, also can obtain identical effect with polygonal hole though in the ground floor shown in Fig. 8 A 910 and in the 3rd layer 930 shown in Fig. 8 C, formed slotted eye.
Table 5
Use description to make the concrete example of the method for three-D photon crystal below.
The 4th embodiment
Fig. 9 A shows the cross-sectional view that is used for making according to fourth embodiment of the invention the method for three-D photon crystal to 9I.
At first, on first substrate 1001, for example form the first film 1002 (Fig. 9 A) that constitutes by medium 1 by crystal growth or gas deposition.Afterwards, resist 1003 is imposed on (Fig. 9 B) on the first film 1002.Then, for example form periodically resist pattern 1004 (Fig. 9 C) by beamwriter lithography.Periodic resist pattern 1004 forms the hole as mask by being etched in the first film 1002.
Afterwards, remove remaining resist 1003 and have the refractive index cycle structure 1005 (Fig. 9 D) that periodic refractive index distributes in ground floor, to form.
Then, on second substrate 1006, for example form second film 1007 (Fig. 9 E) that constitutes by medium 3 by crystal growth or gas deposition.
Then, with the patterned surface and the 1007 mutual weldings (Fig. 9 F) of second film of refractive index cycle structure 1005, and for example by peeling off or second substrate 1006 (Fig. 9 G) is removed in etching.By above-mentioned steps, on refractive index cycle structure 1005, form second film 1007.As the replacement method that is used on the refractive index cycle structure, forming second film, pore in the refractive index cycle structure can be filled with the medium 2 or the medium that can optionally etch away in the operation in the back, can form second film on the refractive index cycle structure by crystal growth or gas deposition afterwards.
Afterwards, resist is imposed on second film 1007.For example form periodically resist pattern 1008 (Fig. 9 H) by beamwriter lithography.
After periodic resist pattern 1008 is as mask etching second film 1007, remove remaining resist to form refractive index cycle structure 1009 (Fig. 9 I) in the second layer on ground floor.
Repeat above-mentioned steps comprises multilayer with formation three-D photon crystal.
Figure 10 is the partial section according to the three-D photon crystal of fourth embodiment of the invention.
The method that can absorb and (use X-x ray exposure x, UV exposure or near field exposure) photoetching and etched in conjunction with the refractive index cycle structure in the cambium layer by the multi-photon of interfering exposure method, nano imprint process, use to pass through ultrashort light pulse.
Formation can be compound semiconductor according to the medium 1 and the medium 3 of the three-D photon crystal of present embodiment, for example GaAs, InP, GaN or ZnO; Semiconductor, for example Si; Dielectric, for example TiO
2Or metal.
Medium 1 can be identical with medium 3.When medium 1 and medium 3 are identical, can on the refractive index cycle structure, easily carry out wafer welding or crystal growth.Like this, can more easily make three-D photon crystal.
Medium 2 (zone except that medium 1 or medium 3) can be air; Dielectric, for example SiO
2Or macromolecule organic material, for example PMMA.
In the 4th embodiment, on ground floor 1005, form after second film 1007, by beamwriter lithography and etched in conjunction with forming the second layer 1009.
Perhaps, can form the refractive index cycle structure in second film 1007 on second substrate 1006, afterwards can be with ground floor 1005 and the 1007 mutual weldings of second film.Subsequently can be by peeling off or etching removes second substrate 1006.
The 5th embodiment
Use description to make the another kind of method of three-D photon crystal below.
In this embodiment, use the hole in the second layer and the 4th layer, to form column structure.The hole that forms in four layers has cross section in the identical face.For example, in the xy cross section of the three-D photon crystal shown in the 4D, the radius R 1 of the circular port in ground floor 510 and the 3rd layer 530 equals the radius R 2 of the circular port in the second layer 520 and the 4th layer 540 at Fig. 4 A.
As shown in Figure 11 A, the first film 1202 that medium 1 constitutes is formed on first substrate 1201 by crystal growth or gas deposition.
Afterwards, resist 1203 is imposed on the first film 1202 (Figure 11 B).
Then, in resist, form periodic patterns by beamwriter lithography.Subsequently, be etched in formation hole 1204 (Figure 11 C) in the first film 1202 by the periodic resist pattern as mask.
Remove remaining resist 1203 afterwards to form refractive index cycle structure (Figure 11 D) in the first film 1202 on first substrate 1201.
Then, as shown in Figure 11 E, on second substrate 1205, form second film 1206 that medium 1 constitutes.The mutual welding of patterned surface (Figure 11 F) with the refractive index cycle structure (the first refractive index cycle structure) in second film 1206 and the first film 1202.By peeling off or etching removes second substrate 1205 (Figure 11 G).
As the replacement method that is used on the refractive index cycle structure, forming second film, through hole in the refractive index cycle structure in the first film 1202 (hole 1204) can be filled with the medium 2 or the medium that can optionally etch away in the operation in the back, can form second film 1206 on the refractive index cycle structure by crystal growth or gas deposition afterwards.
Afterwards, resist 1207 is imposed on second film 1206.After forming the periodicity resist pattern, be etched in formation refractive index cycle structure (the second refractive index cycle structure) in second film 1206 as mask by the periodic resist pattern by beamwriter lithography.
Form hole 1208 (Figure 11 H) by etching.Described hole has the degree of depth greater than second film, 1206 thickness.Subsequently, remove remaining resist 1207 on the ground floor of three-D photon crystal, to form the second layer and the 3rd layer (Figure 11 I) simultaneously.
Afterwards, use and on the first film 1202, form the identical step of second film 1206 shown in Figure 11 F, have the 3rd film 1209 (Figure 11 J) that forms medium 1 formation on second film 1206 of refractive index cycle structure.
Afterwards, use and the identical step of formation refractive index cycle structure in second film 1206 shown in Figure 11 H, in the 3rd film 1209, form hole 1210.
By above-mentioned steps, formed ground floor, the second layer, the 3rd layer and the 4th layer (Figure 11 K) of three-D photon crystal.
Figure 12 is the partial section that comprises the three-D photon crystal of the multilayer of making by the repetition above-mentioned steps.
The method that can absorb and (use X-x ray exposure x, UV exposure or near field exposure) photoetching and etched in conjunction with the refractive index cycle structure in the cambium layer by the multi-photon of interfering exposure method, nano imprint process, use to pass through ultrashort light pulse.
Formation can be compound semiconductor according to the medium 1 of the three-D photon crystal of present embodiment, for example GaAs, InP, GaN or ZnO; Semiconductor, for example Si; Dielectric, for example TiO
2Or metal.Medium 2 can be air; Dielectric, for example SiO
2Or macromolecule organic material, for example PMMA.According to said method, can in according to the three-D photon crystal of present embodiment, form adjacent layer simultaneously.Therefore, can use the step of smaller amounts more easily to make three-D photon crystal.
The 6th embodiment
This embodiment has described the function element that comprises according to three-D photon crystal of the present invention.Figure 13 A and 13B are the cross-sectional views that comprises according to the function element of three-D photon crystal of the present invention.These three-D photon crystals comprise waveguide 1400 or 1401, and described waveguide 1400 or 1401 is the linear discontinuities that make the crystal structure disordering.
Electromagnetic wave with the wavelength in the wavelength region may of complete photonic band gap of three-D photon crystal can exist only in defective 1400 or 1401.
A kind of like this crystal structure can provide the low-loss wave guide of rapid bending.Figure 13 A is the cross-sectional view that comprises the function element of straight wave guide pipe 1400, and described straight wave guide pipe 1400 is by providing linear discontinuities to form in the presumptive area in three-D photon crystal according to the present invention.Figure 13 B is the cross-sectional view that comprises the function element of curved waveguide 1401, and described curved waveguide 1401 is by providing linear discontinuities to form in the presumptive area in three-D photon crystal according to the present invention.The position of part that can be by removing crystal structure, the part that changes crystal structure or shape or form linear discontinuities with the part of medium replacement crystal structure with refractive index different with the medium of formation crystal structure, so that waveguide can have the performance of expectation, Qi Wang wavelength region may for example.
Figure 13 C is the cross-sectional view that has comprised the resonator of the point defect 1402 that makes the crystal structure disordering in three-D photon crystal according to the present invention.The electromagnetic wave of wavelength in the wavelength region may of the complete photonic band gap of three-D photon crystal can exist only in the point defect 1402.
Resonator can be captured electromagnetic wave effectively in this very little zone.This resonator can be used for providing wavelength selection filter, and described wavelength selection filter is extracted the electromagnetic wave in the corresponding very narrow wavelength region may of resonance wavelength with resonator from incident wave.
Can form point defect by the part of removing crystal structure or position or the shape that changes the part of crystal structure,, for example expect the selection of wavelength so that resonator can have the performance of expectation.Use by three-D photon crystal made according to the method for the present invention, can more easily be manufactured on the resonator of the wavelength region may operation of expectation.
When the resonator shown in Figure 13 C is filled with active medium (for example luminescence activity medium), and when using the electromagnetic wave that comes from the resonator outside or electric current, can provide efficient luminescent device, for example laser instrument or LED to its supplying energy.
For example, when the resonance wavelength of resonator was corresponding with infrared communication frequency band (800nm is to 1800nm), resonator can be used on the light source that is used for optical communication.When the resonance wavelength of resonator and the three primary colours of light (that is, red (R), green (G) and blue (B)) were corresponding, this resonator can be used in the light source of visual display unit.
In addition, resonator can be used in the light source of optical pickup apparatus of optical devices (for example CD or DVD player).
In addition, can make up various function elements, for example resonator shown in the waveguide shown in Figure 13 A and the 13B, Figure 13 C, luminescent device and the polarizer that uses the anomalous dispersion in the photon band are to provide the high-performance integrated microcircuit.
Aforesaid, owing to only comprise four layers, therefore be easy to make according to the three-D photon crystal of these embodiment.In addition, because the refractive index cycle structure has less directional dependence, so this three-D photon crystal has the complete photonic band gap wideer than known three-D photon crystal.
Can easily make the function element that comprises according to the three-D photon crystal of these embodiment, and described function element can be operated under wideer wavelength band.
Therefore, according to the embodiment of the invention, three-D photon crystal can all be made of a plurality of cycles that the layer that reduces quantity constitutes each cycle, therefore can make easily.In addition, this three-D photon crystal has complete photonic band gap under wideer wavelength region may.Also can make the function element that comprises this three-D photon crystal.
Though described the present invention in conjunction with exemplary embodiment, be understandable that the present invention is not limited to disclosed exemplary embodiment.The scope of claims should be according to the explanation of broad sense, so that it comprises all corrections, equivalent construction and function.
Claims (15)
1. a three-D photon crystal has wherein periodically piled up a plurality of layers that comprise the periodic refractive index structure, and described three-D photon crystal comprises:
Ground floor with periodic structure, in the periodic structure of ground floor, along first cycle in the direction in the face of layer be A and along in the direction in the face of layer perpendicular to cycle of second of first be B the first rectangle lattice the lattice-site place and be located at respect to the position of the first rectangle lattice and be provided with the hole that is filled with second medium along the first axle offset A/2 and along the lattice-site place of the second rectangle lattice of the position of the second axle offset B/4, and the zone except that the hole is filled with first medium;
The second layer with periodic structure, in the periodic structure of the second layer, lattice-site place at center of area rectangle lattice is provided with the column structure that is constituted and had along stacking direction longitudinal axis by the 3rd medium, and the zone except that column structure is filled with second medium, described center of area rectangle lattice is located at respect to the position along second axle offset+3B/8, the position of the first rectangle lattice, and is A and be B along cycle of second along cycle of first;
The 3rd layer, have be included in ground floor in periodic structure identical and be arranged on respect to the position that is included in the periodic structure in the ground floor in the face of layer in the direction along the first axle offset A/2 and along the periodic structure of the position of the second axle offset B/2; And
The 4th layer, have be included in the second layer in periodic structure identical and be arranged in the face of layer in the direction periodic structure of the position identical with being included in periodic structure in the second layer,
Wherein, ground floor, the second layer, the 3rd layer and the 4th layer periodically pile up successively, and the refractive index of first medium and the 3rd medium is all greater than the refractive index of second medium.
2. three-D photon crystal according to claim 1 is characterized in that, the hole that is formed in ground floor and the 3rd layer has circular or oval-shaped interior cross section.
3. three-D photon crystal according to claim 1, it is characterized in that, in the second layer and the 4th layer, the column structure that the 3rd medium constitutes is to be formed by a plurality of holes and the zone except that described a plurality of holes, these holes in the face of layer, be located on the direction with ground floor in the hole and the 3rd layer in same position place, hole, and these holes are filled with second medium.
4. three-D photon crystal according to claim 3 is characterized in that, the hole that is formed in the second layer and the 4th layer has circular or oval-shaped interior cross section.
5. three-D photon crystal according to claim 4 is characterized in that, the hole that is formed in ground floor and the 3rd layer has circular or oval-shaped interior cross section.
6. three-D photon crystal according to claim 5 is characterized in that, be formed on the second layer and hole in the 4th layer have be formed on ground floor and the 3rd layer in the identical face in hole in the cross section.
7. three-D photon crystal according to claim 3 is characterized in that, be formed on the second layer and hole in the 4th layer have be formed on ground floor and the 3rd layer in the identical face in hole in the cross section.
8. three-D photon crystal according to claim 1 is characterized in that, described column structure has cross section in the polygon facet.
9. three-D photon crystal according to claim 1 is characterized in that, first medium is different with the 3rd medium.
10. three-D photon crystal according to claim 1 is characterized in that, first medium is identical with the 3rd medium.
11. a function element, it has the defective structure of formation in three-D photon crystal according to claim 1.
12. function element according to claim 11 is characterized in that, described defective is for constituting the linear discontinuities of waveguide.
13. function element according to claim 11 is characterized in that, described defective is for constituting the point defect of resonator.
14. function element according to claim 13 is characterized in that, described resonator comprises the luminescence activity medium.
15. a method of making three-D photon crystal according to claim 1 may further comprise the steps:
On substrate, form layer with period 1 property refractive index structures;
Have period 1 property refractive index structures the layer on form film;
In described film, form property second round refractive index structures by the described film of etching, so that the degree of depth in the hole that forms by etching is greater than the thickness of film;
Has another film of formation on the described film of property second round refractive index structures; And
In described another film, form period 1 property refractive index structures by described another film of etching, so that the degree of depth in the hole that forms by etching is greater than the thickness of described another film.
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| US10718901B2 (en) * | 2013-06-26 | 2020-07-21 | Micron Technology, Inc. | Photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5335240A (en) * | 1992-12-22 | 1994-08-02 | Iowa State University Research Foundation, Inc. | Periodic dielectric structure for production of photonic band gap and devices incorporating the same |
| US5440421A (en) * | 1994-05-10 | 1995-08-08 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
| WO1998026316A1 (en) * | 1996-12-13 | 1998-06-18 | Massachusetts Institute Of Technology | Tunable microcavity using nonlinear materials in a photonic crystal |
| JP2001249235A (en) * | 2000-03-06 | 2001-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Photonic crystal structure and manufacturing method |
| US6597851B2 (en) * | 2000-08-09 | 2003-07-22 | Massachusetts Institute Of Technology | Periodic dielectric structure having a complete three-dimensional photonic band gap |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5335240A (en) * | 1992-12-22 | 1994-08-02 | Iowa State University Research Foundation, Inc. | Periodic dielectric structure for production of photonic band gap and devices incorporating the same |
| US5440421A (en) * | 1994-05-10 | 1995-08-08 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
| WO1998026316A1 (en) * | 1996-12-13 | 1998-06-18 | Massachusetts Institute Of Technology | Tunable microcavity using nonlinear materials in a photonic crystal |
| JP2001249235A (en) * | 2000-03-06 | 2001-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Photonic crystal structure and manufacturing method |
| US6597851B2 (en) * | 2000-08-09 | 2003-07-22 | Massachusetts Institute Of Technology | Periodic dielectric structure having a complete three-dimensional photonic band gap |
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