CN100419817C - Solid-state luminous display and its manufacturing method - Google Patents
Solid-state luminous display and its manufacturing method Download PDFInfo
- Publication number
- CN100419817C CN100419817C CNB2005100730217A CN200510073021A CN100419817C CN 100419817 C CN100419817 C CN 100419817C CN B2005100730217 A CNB2005100730217 A CN B2005100730217A CN 200510073021 A CN200510073021 A CN 200510073021A CN 100419817 C CN100419817 C CN 100419817C
- Authority
- CN
- China
- Prior art keywords
- luminous
- solid
- micrinite
- display
- conducting wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The present invention relates to a solid-state luminous display and a manufacture method thereof. The solid-state luminous display at least comprises a metal plate which forms an electric conduction circuit and a plurality of luminous microcrystallites which are arranged on the surface of the metal plate and are electrically connected with the electric conduction circuit. The solid-state luminous display and the manufacture method thereof of the present invention have the characteristics of high picture quality, environmental protection, energy saving, frivolity and flexibility; the present invention can provide excellent photoelectric effects, such as luminous efficiency, response time, etc. and simultaneously, the present invention reaches the effects that a packaging production process is simplified, the reliability and the service life of the display are enhanced, and the present invention causes a luminous element of the display to have good heat dissipation routes. The present invention eliminates the electrostatic problem of a plastic base plate in the prior art to solve the multiple deficiencies of the prior art, and is good for enhancing the industrial use value of the device.
Description
Technical field
The invention relates to a kind of display and method for making thereof, particularly about a kind of solid-state luminous display (Solid-state Light Display) and method for making thereof of using planar display technique.
Background technology
For the demand that satisfies vision with hold more information, people are more and more high to the size and the resolution requirement of display, make flat-panel screens become the pith in the electronic product.Yet, the characteristic of display reduction in bulk can not satisfy the demand of monitor market from now on, therefore present plane display technique develops to directions such as low cost, low power consumption, high image quality, digitizing, lighting, deflectionization (for example flexible display) and colorizes, but broader applications are in industries such as video, information, communication, household electrical appliances and consumer.
In recent years, such as LCD, plasma display panel, Organic Light Emitting Diode (OrganicLight Emitting Diode, OLED) display and Field Emission Display (FED) though etc. the development of flat-panel screens aspect process technique, display characteristic and large scaleization significant progress is all arranged.
With non-self luminous LCD, LCD has color saturation low (about 70%NTCS), reaction time long (about 16ms), angle of visibility is narrow, resolution is high, power consumption (utilization rate backlight is lower than 6%) and liquid crystal material need seal and characteristic such as flexibleization difficulty.So this existing display is economized on the technical need trend such as energy and frivolous flexible in high color saturation, short reaction time, environmental protection, faces the challenge of all types of display specifications just gradually.
With regard to self luminous display, plasma display panel have color saturation medium (about 80%NTCS), reaction time short (being shorter than 1ms), etc. to luminous and the visual angle is wide, resolution is low, power consumption is big and need Vacuum Package and characteristics such as flexibleization difficulty; The OLED displaying appliance have color saturation height (about 100%NTCS), reaction time short (being shorter than 1ms), etc. to luminous and the visual angle is wide, resolution is high, power saving, flexibleization is feasible and the OLED luminescent layer needs characteristics such as seal protection; Field Emission Display then have color saturation medium (about 80%NTCS), reaction time short (being shorter than 1ms), etc. to luminous and the visual angle is wide, resolution is high, power saving and need Vacuum Package and characteristics such as flexibleization difficulty; Hence one can see that, and developing self luminous display also can't satisfy the demand that each side shows.
Simultaneously, relevant patented technology then for example has United States Patent (USP) the 5th, 184, and No. 114, the 5th, 893, No. 721 and the 6th, 849, technology such as 877B2 number.
For instance, United States Patent (USP) the 5th, 184, No. 114 case proposes a kind of light emitting diode (LightEmitting Display, LED) full-color display.This patent mainly be to use LED lamp/led module as light-emitting component and printed circuit board (PCB) as substrate, be main processing procedure with assembly adhesion technology, uniformity of luminance makes led module assemble after selecting; Minimum 3 millimeters (mm) of the image line-spacing of present this patent related display, and do not have pliability.Therefore not only resolution is relatively poor for this prior art, also can't be applied in the product that needs deflection, and the large-scale full-color display that is only applicable to high unit price is used, as the outdoor version video wall.
United States Patent (USP) the 5th, 893, No. 721 case proposes a kind of led array display.This patent mainly be to use the LED wafer with little shadow, etching, be deposited as main processing procedure and produce led array and integrated circuit, become a kind of active led array display; The uniformity of luminance of this technology is to make led array form from same LED wafer manufacturing, so that the luminescence efficiency difference of each pixel, even the image line-spacing is 20 to 40 microns, the image quality of this prior art is still barely satisfactory; Moreover, too high because of led array processing procedure complexity and cost, more can't be applied on the product that needs deflection, make that this prior art application development is limited.
United States Patent (USP) the 6th, 849, the 877B2 case then proposes a kind of making of active display.This patent mainly be to use OLED as light-emitting component and plastic plate as substrate, be main processing procedure with patterned deposition, produce the image line-spacing and be master/passive display system of 100 to 200 microns, and the tool pliability; The uniformity of luminance of this technology is to make the OLED array utilize sputter to be made, and can't replace, and uses the plastics that can not conduct electricity can produce electrostatic problem as substrate.Therefore this prior art can't optionally be replaced light-emitting component, uses plastic base except electrostatic problem is arranged, and also is unfavorable for the heat radiation of light-emitting component in the display.
As from the foregoing, can not satisfy the display technique that each side shows demand characteristics at present.Therefore, how to provide excellent luminescence efficiency and the reaction time with dynamical light-emitting component, and simplify reliability and the life-span of encapsulation procedure to improve display simultaneously, solve the variety of issue that above-mentioned prior art causes, and can provide the display technique that has high image quality, environmental protection province energy and frivolous flexible concurrently, real problem for demanding urgently inquiring into.
Summary of the invention
For overcoming the shortcoming of the above prior art, fundamental purpose of the present invention provides a kind of solid-state luminous display and method for making thereof that has high image quality, environmental protection province energy and frivolous flexible concurrently.
Another object of the present invention provides a kind of have photoelectric solid-state luminous display and method for makings thereof such as excellent luminescence efficiency and reaction time.
A further object of the present invention provide a kind of have simplify encapsulation procedure and improve the solid-state luminous display and the method for making thereof in display reliability and life-span simultaneously.
The light-emitting component that another purpose of the present invention provides a kind of display has the solid-state luminous display and the method for making thereof of better heat radiation approach.
Another purpose again of the present invention provides a kind of solid-state luminous display and method for making thereof of using metal substrate can eliminate electrostatic problem.
For achieving the above object and other purpose, the invention provides a kind of solid-state luminous display and method for making thereof, this solid-state luminous display comprises at least: one has formed the sheet metal of conducting wire, this conducting wire comprises a plurality of electric connection pads and a plurality of integrated circuit (Integral Circuit, IC) assembly; And a plurality of luminous micrinite, be located at this metal sheet surface and electrically connect with this electric connection pad respectively.
The method for making of this solid-state luminous display comprises at least that then polishing polishes a sheet metal; One insulation course is set on this sheet metal; One conducting wire layer is set on this insulation course; Remove this sheet metal and assemble the insulation course at luminous micrinite place; And a plurality of luminous micrinite are set and electrically connect with this conducting wire at this metal sheet surface.
Wherein, this metal sheet surface a plurality of luminous micrinite are set and the step that electrically connects with this conducting wire in; being included in this conducting wire and luminous micrinite upper end is provided with conductive connecting device and electrically connects; wherein also be included in a protective seam is set on this conducting wire, luminous micrinite and the conductive connecting device, perhaps also can be located at light collecting layer on this protective seam in that a protective seam and is set on this conducting wire, luminous micrinite and the conductive connecting device.
But this is the thin plate of flexible or flexible not for this sheet metal.Wherein, this sheet metal can nine be selected from and comprises a kind of in the combination that stainless steel and aluminium alloy form, this stainless numbering is preferably a kind of in 304,316 and 430, the numbering of this aluminium alloy is preferably a kind of in 2 series to 6 series, and the thickness of this sheet metal can be chosen in below 500 microns.
This integrated circuit package is to be selected to comprise a kind of in the combination that driving component, passive component and thin film transistor (TFT) (TFT) assembly forms.Also be provided with an insulation course between this sheet metal and this conducting wire, wherein, this insulation course is preferably the insulation course of silicon dioxide, and its thickness is less than 10 microns.
In a preferable example, this luminous micrinite can be formed by the light emitting diode combined of difference and same color.In another preferable example, this luminous micrinite can be formed by the light emitting diode combined of same color, wherein, this luminous micrinite may be selected to be ultraviolet light emitting diode or other suitable assembly, and this luminous micrinite can be assembled by the fluorescent bisque that covers difference and same color respectively.Preferably, this luminous micrinite can be served as reasons light emitting diode wafer that brilliant processing procedure of heap of stone makes by the prepared structure of micrinite processing procedure.
In a preferable example, solid-state luminous display of the present invention also can comprise the protective seam that this luminous micrinite of coating and this conducting wire are set; One protective seam promptly is set on this conducting wire, luminous micrinite and conductive connecting device.Wherein, this protective seam is rectangular or wavy microstructure, but and this protective seam this be chosen as the structure that transparent material is made.Get in another preferable example; solid-state luminous display then of the present invention also can comprise and the protective seam that coats this luminous micrinite and this conducting wire is set and is located at light collecting layer on this protective seam, promptly is located at light collecting layer on this protective seam in that a protective seam and is set on this conducting wire, luminous micrinite and the conductive connecting device.Wherein, this protective seam and this light collecting layer are rectangular or wavy microstructures, and this protective seam and this light collecting layer all may be selected to be the structure that transparent material is made.
Compared with prior art, solid-state luminous display of the present invention and method for making thereof are to select the sheet metal with thermotolerance and thermal diffusivity for use, not only be compatible with high temperature process being reduced on the sheet metal thin film manufacture process that forms the conducting wire, and the heat radiation approach and the ground connection effect of solid-state luminous micrinite the best are provided simultaneously.Simultaneously, the present invention with high-effect and small solid luminescent micrinite as light-emitting component, except can improve prior art the deficiency of aspects such as environmental protection and energy saving and frivolous flexible, more can provide color saturation height (about 100%NTCS), reaction time lack (being shorter than 1ms), etc. to luminous and the visual angle is wide, resolution is high and stable high effect.Whereby, just can solve the disappearance that prior art can't be taken into account development such as low cost, low power consumption, high image quality, digitizing, lighting, deflectionization and colorize, more not have the specification limit on using.
Solid-state luminous display of the present invention and method for making thereof have the characteristic of high image quality, environmental protection and energy saving and frivolous flexible concurrently, can be in photoelectric whiles such as luminescence efficiency that excellence is provided and reaction time, reach the effect that the light-emitting component that has the reliability and the life-span of simplifying encapsulation procedure, raising display concurrently and make display has preferable heat radiation approach, and eliminated the electrostatic problem of plastic base in the prior art, solve the disadvantages of prior art whereby, and more help improving the industrial utilization of device.
Description of drawings
Fig. 1 is the synoptic diagram that shows embodiments of the invention 1;
Fig. 2 A and Fig. 2 B are the processing procedure synoptic diagram of construction drawing 1 luminous micrinite;
Fig. 3 A and Fig. 3 B are presented at the synoptic diagram that forms protective seam on the structure of Fig. 1; And
Fig. 4 is the synoptic diagram that shows embodiments of the invention 2.
Embodiment
Embodiment 1
Fig. 1 to Fig. 3 B draws according to solid-state luminous display of the present invention and method for making embodiment 1 thereof.As shown in Figure 1, the solid-state luminous display of present embodiment 1 comprises a sheet metal 1 and a plurality of luminous micrinite 3 at least.
This sheet metal 1 is preferably the thin plate of flexible, and its thickness for example can be below 500 microns, but is not as limit, for example also can be the thin plate of flexible not.Wherein, this sheet metal 1 can be selected the plate made such as the aluminium alloy of the stainless steel that is numbered 304,316,430,2 series to 6 series or other proper metal, and has formed conducting wire 11 on this sheet metal 1.In the present embodiment, can select to form this conducting wire 11, make this conducting wire 11 comprise a plurality of electric connection pads 111 and a plurality of integrated circuit (IC) assembly 113 with existing integrated circuit manufacture process or other suitable processing procedure.For making accompanying drawing more succinctly understandable, only show local this sheet metal 1 and conducting wire 11 thereof in the accompanying drawings.This electric connection pad 111 can for example be the weld pad that gold is made, and 113 of this integrated circuit packages can for example be driving component, passive component, thin film transistor (TFT) (TFT) or other suitable assembly, but all non-ly limits with this.Simultaneously, this sheet metal 1 can carry out earlier polishing the planarization processing procedure such as contact or contactless etc. before forming this conducting wire 11, made the surface of this sheet metal 1 keep smooth.In addition, also can be provided with an insulation course 13 such as silicon dioxide between this sheet metal 1 and this conducting wire 11, can avoid this sheet metal 1 to contact and short circuit with this conducting wire 11, the thickness of this insulation course 13 is for example less than 10 microns.
This luminous micrinite 3 is provided in a side of this sheet metal 1 surface and conductive connecting device 14 and these conducting wire 11 electric connections is set; Before this sheet metal 1 this luminous micrinite 3 of installing, the insulation course 13 that earlier this sheet metal 1 is provided with these luminous micrinite 3 parts is removed, and makes that this luminous micrinite 3 can contact with this sheet metal 1 and conduct electricity.In the present embodiment, this luminous micrinite 3 light emitting diode wafer that can be made by brilliant processing procedure of heap of stone is by for example the micrinite processing procedure is obtained.The micrinite processing procedure is shown in Fig. 2 A, can adopt light emitting diode wafer that existing brilliant processing procedure of heap of stone makes by as the dry-etching technology, of heap of stone brilliant with substrate 10 on formation for example comprise the epitaxial layer 101 of a plurality of light emitting diodes as luminous micrinite, removing this crystalline substance of heap of stone with this epitaxial layer 101 separately with substrate 10, just form many small naked crystal structures shown in Fig. 2 B, promptly luminous micrinite 3.At this moment, can adopt the self-assembling technique that picks and places assembling, parallel assembling or other suitable package technique that luminous micrinite 3 is assembled on the sheet metal 1 that is formed with conducting wire 11, and finish electric connection such as single component.Just the method for making of the solid-state luminous display of present embodiment comprises at least: provide one to form the sheet metal 1 of conducting wire 11 and multiple light micrinite 3 is set and electrically connect on this sheet metal 1 surface and with this conducting wire 11.Wherein, providing one to form in the step of sheet metal 1 of conducting wire 11, comprising that polishing polishes a sheet metal, an insulation course is being set on this sheet metal, a conducting wire layer is set and is removing the insulation course that this sheet metal is assembled luminous micrinite place on this insulation course.Be provided with in the step that a plurality of luminous micrinite electrically connect at this metal sheet surface and with this conducting wire at this; then be included in this conducting wire and luminous micrinite upper end and conductive connecting device be set as electric connection; wherein; also be included in a protective seam is set on this conducting wire, luminous micrinite and the conductive connecting device, perhaps also can be located at light collecting layer on this protective seam in that a protective seam and is set on this conducting wire, luminous micrinite and the conductive connecting device.
Because said integrated circuit processing procedure, planarization processing procedure, self-assembling technique, brilliant processing procedure of heap of stone and micrinite processing procedure etc. all are prior aries, thus no longer give unnecessary details in this for literary composition, and processing procedure of the present invention is not to exceed with person described in the present embodiment, and different variations can be arranged.
In the present embodiment; this luminous micrinite 3 can be selected to be formed by the light emitting diode combined of difference and same color; the light emitting diode combined that for example mostly is red (R), green (G), blue colors such as (B) forms, and solid-state luminous display of the present invention also can comprise a protective seam.As shown in Figure 3A, be one the protective seam 15 that coats this luminous micrinite 3 and this conducting wire 11 to be set, this protective seam 15 is the microstructures that are as rectangle; Certainly; because the degree of stability of this luminous micrinite 3 in atmosphere is better; so as long as this protective seam 15 can be protected the surface, do not need as prior art, to accomplish to seal or the degree of vacuum, as long as can protect this luminous micrinite 3 also can make light by the person.Preferably; in another example; shown in Fig. 3 B; but this protective seam 15 is the microstructures that are for example wavy or other optically focused; and this protective seam 15 may be selected to be the structure that transparent material is made; having the effect of optically focused concurrently when for example comprising protection this luminous micrinite 3 and 11 surfaces, this conducting wire providing, but be not to limit the present invention with this.Certainly; in other example; solid-state luminous display of the present invention also can comprise and the protective seam 15 that coats this luminous micrinite 3 and this conducting wire 11 is set and is located at light collecting layer (not marking) on this protective seam 15; wherein; this protective seam 15 and this light collecting layer all can be to be wavy microstructure; and the structure that this protective seam 15 and this light collecting layer all can select transparent material to make is to provide the effect that for example comprises this luminous micrinite 3 of protection and these 11 surfaces, conducting wire and optically focused respectively.
Unlike the prior art be, be to use this sheet metal 1 as substrate in the present embodiment 1, this sheet metal 1 is except having electric conductivity, can be used as the shared electrode of active substrate and can avoid display outside the electrostatic problem that produces during use and the processing procedure, the thermotolerance of metal more can be compatible in high temperature IC processing procedure, simplify in the conducting wire thin film manufacture process such as driving component, the metal surface has good reflective character, the light reflection that the luminous micrinite 3 of light-emitting component can be produced is to user's direction, improved display brightness, and the heat that produces when operation can carry out loss by the distinctive high heat-conduction coefficient of metal, has solved the most thorny heat dissipation problem of light-emitting component.Simultaneously, be to use luminous micrinite 3 such as the light emitting diode of naked crystal structure as solid-state light emitting element in the present embodiment 1, the luminous micrinite 3 that makes by for example existing brilliant processing procedure of heap of stone and micrinite processing procedure, the high-effect of 100 to 200 microns image line-spacing and solid state light emitter can be provided, excellent luminescence efficiency and the reaction time not only can be provided, and because volume is quite little, this sheet metal 1 of deflection is not positioned at the planimetric position on this sheet metal 1 surface or this luminous micrinite 3 dropped even can not change this luminous micrinite 3 yet, the stability of solid luminescent diode in atmosphere can be simplified the encapsulation procedure of solid-state luminous display of the present invention, and improves simultaneously the reliability and the life-span of display.
Therefore, compared with prior art, solid-state luminous display of the present invention and method for making thereof can utilize the solid luminescent diode that the self-emitting light source of energy-conservation high-photoelectric transformation efficiency is provided, and the display quality of the high color saturation of wide colour gamut is provided.And except the characteristic that has reaction time weak point and wide viewing angle, the stability of solid-state luminous display in atmosphere can be simplified the encapsulation procedure of display and improve the reliability and the life-span of display.Simultaneously, because design of the present invention is as substrate with sheet metal, this quite thin sheet metal is except producing dynamical filming diode and eliminating the static, heat radiation approach such as luminous micrinite the best of light emitting diode more can be provided, so can significantly improve the luminescence efficiency and the display quality of display, solve prior art whereby and can't satisfy the variety of problems that each side shows demand characteristics.
Therefore the invention provides a kind of solid-state luminous display and method for making thereof that has high image quality, environmental protection province energy and frivolous flexible concurrently, except possessing photoelectric effect such as excellent luminescence efficiency and reaction time, more can simplify reliability and the life-span of encapsulation procedure to improve display simultaneously, make the light-emitting component in the display have preferable heat radiation approach, more there is not electrostatic problem, can be applied on the product that needs deflection, further improve industrial utilization.
Embodiment 2
Fig. 4 is that the embodiment 2 according to solid-state luminous display of the present invention and method for making thereof draws.Wherein, the assembly identical or approximate with embodiment 1 is to represent with identical or approximate element numbers, and omits detailed narration, makes the explanation of this case clearer understandable.
Embodiment 2 and embodiment 1 maximum difference are that the luminous micrinite of embodiment 1 is that light emitting diode combined by different and same color forms, and the luminous micrinite of embodiment 2 then is that the light emitting diode combined by same color forms.
As shown in Figure 4, this solid-state luminous display comprises a sheet metal 1 that has formed conducting wire 11, is located at this sheet metal 1 surface and a plurality of luminous micrinite 3 that electrically connects with this conducting wire 11 and the fluorescent bisque 17 that covers this luminous micrinite 3 at least respectively.In present embodiment 2, this luminous micrinite 3 can be selected for example ultraviolet light emitting diode or other suitable assembly, and be can be respectively by the conducting wire 11 of the phosphor powder that covers difference and same color to this luminous micrinite 3 and part, thereby form this fluorescent bisque 17.It should be noted, this fluorescent bisque 17 can be respectively identical and different colours such as how red (R), green (G), blue (B) combination assembled, exciting this fluorescent bisque 17 to produce three primary colors by this luminous micrinite 3, producing full-color effect, but is not to limit the present invention with this.
Hence one can see that, and the present invention for example also can utilize the ultraviolet of ultraviolet light emitting diode to excite the fluorescent bisque to produce three primary colors, and the display quality of the high color saturation of wide colour gamut can be provided except can adopting the trichromatic autoluminescence of direct generation.
In sum, solid-state luminous display of the present invention and method for making thereof are a kind of high image quality that has concurrently, environmental protection economizes the display technique of energy and frivolous flexible, with the photoelectric subassembly of dynamical solid luminescent micrinite as the single picture element of display, except splendid luminescence efficiency being provided and having the reaction time weak point and wide viewing angle characteristic of self-emitting display, and can be by the solid-state stability of luminous micrinite in atmosphere, the encapsulation procedure of having simplified display improves the reliability and the life-span of display simultaneously, and the applied metal plate more can be brought into play the high-effect of solid luminescent micrinite and best heat radiation approach is provided, and can significantly improve the luminescence efficiency and the display quality of display.Therefore the present invention can solve the disadvantages of prior art, and the real tool design flexibility of the present invention, can effectively improve industrial utilization.
Claims (15)
1. a solid-state luminous display is characterized in that, this solid-state luminous display comprises at least:
One has formed the sheet metal of conducting wire, and this conducting wire comprises a plurality of electric connection pads and a plurality of integrated circuit package at least; And
A plurality of luminous micrinite are located at this metal sheet surface and electrically connect with this electric connection pad respectively.
2. solid-state luminous display as claimed in claim 1 is characterized in that, this sheet metal is the thin plate of flexible or flexible not.
3. solid-state luminous display as claimed in claim 1 is characterized in that, this sheet metal is to be selected to comprise a kind of in the combination that stainless steel and aluminium alloy form.
4. solid-state luminous display as claimed in claim 1 is characterized in that, this integrated circuit package is to be selected to comprise a kind of in the combination that driving component, passive component and thin-film transistor component form.
5. solid-state luminous display as claimed in claim 1 is characterized in that, also is provided with an insulation course between this sheet metal and this conducting wire.
6. solid-state luminous display as claimed in claim 1 is characterized in that, this luminous micrinite is that the light emitting diode combined by difference and same color forms.
7. solid-state luminous display as claimed in claim 1 is characterized in that, this luminous micrinite is that the light emitting diode combined by same color forms.
8. solid-state luminous display as claimed in claim 1 is characterized in that, this luminous micrinite is the ultraviolet light emitting diode.
9. solid-state luminous display as claimed in claim 1 is characterized in that, this solid-state luminous display also comprises the light-permeable protective seam that coats this luminous micrinite and this conducting wire.
10. solid-state luminous display as claimed in claim 1 is characterized in that, this solid-state luminous display comprises that also a light-permeable protective seam and that coats this luminous micrinite and this conducting wire is located at the light collecting layer on this protective seam.
11. solid-state luminous display as claimed in claim 1 is characterized in that, this luminous micrinite is assembled by the fluorescent bisque that covers difference and same color respectively.
12. the method for making of a solid-state luminous display is characterized in that, this method for making comprises at least:
Polishing polishes a sheet metal;
One insulation course is set on this sheet metal;
One conducting wire layer is set on this insulation course;
Remove this sheet metal and assemble the insulation course at luminous micrinite place; And
A plurality of luminous micrinite are set and electrically connect at this metal sheet surface with this conducting wire.
13. method for making as claimed in claim 12 is characterized in that, this luminous micrinite is the structure that is made by the micrinite processing procedure by the light emitting diode wafer that brilliant processing procedure of heap of stone makes.
14. method for making as claimed in claim 12 is characterized in that, this metal sheet surface a plurality of luminous micrinite are set and the step that electrically connects with this conducting wire in comprise:
In this conducting wire and luminous micrinite upper end conductive connecting device be set electrically connect.
15. method for making as claimed in claim 14 is characterized in that, this method for making also is included in a light-permeable protective seam is set on this conducting wire, luminous micrinite and the conductive connecting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100730217A CN100419817C (en) | 2005-05-27 | 2005-05-27 | Solid-state luminous display and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100730217A CN100419817C (en) | 2005-05-27 | 2005-05-27 | Solid-state luminous display and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1870078A CN1870078A (en) | 2006-11-29 |
| CN100419817C true CN100419817C (en) | 2008-09-17 |
Family
ID=37443733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100730217A Active CN100419817C (en) | 2005-05-27 | 2005-05-27 | Solid-state luminous display and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100419817C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7897974B2 (en) | 2005-05-20 | 2011-03-01 | Industrial Technology Research Institute | Solid-state light emitting display and fabrication method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101751829A (en) * | 2008-11-28 | 2010-06-23 | 陈宏铭 | Ultra-thin light-emitting diode (LED) display |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5184114A (en) * | 1982-11-04 | 1993-02-02 | Integrated Systems Engineering, Inc. | Solid state color display system and light emitting diode pixels therefor |
| CN2324604Y (en) * | 1998-01-20 | 1999-06-16 | 士嘉投资股份有限公司 | Visable light laser indicator |
| US6849877B2 (en) * | 2001-06-20 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
-
2005
- 2005-05-27 CN CNB2005100730217A patent/CN100419817C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5184114A (en) * | 1982-11-04 | 1993-02-02 | Integrated Systems Engineering, Inc. | Solid state color display system and light emitting diode pixels therefor |
| CN2324604Y (en) * | 1998-01-20 | 1999-06-16 | 士嘉投资股份有限公司 | Visable light laser indicator |
| US6849877B2 (en) * | 2001-06-20 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7897974B2 (en) | 2005-05-20 | 2011-03-01 | Industrial Technology Research Institute | Solid-state light emitting display and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1870078A (en) | 2006-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106409864B (en) | Use the display equipment of semiconductor light-emitting-diode | |
| CN105051804B (en) | Use the display device of light emitting semiconductor device | |
| EP2041790B1 (en) | Method for manufacturing a light emitting device | |
| CN104584110B (en) | Display device using semiconductor light emitting device and method of fabricating the same | |
| EP4072244A1 (en) | Display device using semiconductor light emitting device and fabrication method thereof | |
| CN111370461B (en) | Display panel and display device | |
| KR20190097946A (en) | Fabricating method of display apparatus using semiconductor light emitting device | |
| CN109691231A (en) | Use the display device of semiconductor light-emitting elements | |
| CN102522464A (en) | Method of manufacturing light emitting diode package | |
| JP4214660B2 (en) | Direct-view display device | |
| KR20200099037A (en) | Display device using semiconductor light emitting diode and manufacturing method thereof | |
| TW201037813A (en) | Light emitting apparatus | |
| CN107210292A (en) | Use the display device and its manufacture method of light emitting semiconductor device | |
| KR102357645B1 (en) | Display device using semiconductor light emitting device | |
| CN110050512A (en) | Use the display device of semiconductor light-emitting elements | |
| CN100419817C (en) | Solid-state luminous display and its manufacturing method | |
| US7998764B2 (en) | Solid-state light emitting display and fabrication method thereof | |
| WO2004105071A1 (en) | Thermal management in electronic displays | |
| CN106898682A (en) | The preparation method and adopting surface mounted LED light source of a kind of adopting surface mounted LED light source | |
| TW201231860A (en) | Light emitting apparatus | |
| KR20160061153A (en) | Display device using semiconductor light emitting device | |
| CN108735102A (en) | A kind of flexible display screen and its production method | |
| CN108231843A (en) | A kind of flexible OLED display and preparation method thereof | |
| TWI313518B (en) | ||
| KR20220157120A (en) | Light emitting diode and display module using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |