CN100428404C - Enclosed infrared heating device for semiconductor chip - Google Patents

Enclosed infrared heating device for semiconductor chip Download PDF

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Publication number
CN100428404C
CN100428404C CNB2006100313694A CN200610031369A CN100428404C CN 100428404 C CN100428404 C CN 100428404C CN B2006100313694 A CNB2006100313694 A CN B2006100313694A CN 200610031369 A CN200610031369 A CN 200610031369A CN 100428404 C CN100428404 C CN 100428404C
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CN
China
Prior art keywords
water
cooling
cover plate
heating device
housing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100313694A
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Chinese (zh)
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CN101038856A (en
Inventor
贾京英
刘咸成
王学仕
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CETC 48 Research Institute
CETC 18 Research Institute
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CETC 48 Research Institute
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Priority to CNB2006100313694A priority Critical patent/CN100428404C/en
Publication of CN101038856A publication Critical patent/CN101038856A/en
Application granted granted Critical
Publication of CN100428404C publication Critical patent/CN100428404C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The invention provides a closed infrared heater for semiconductor wafer, which includes an infrared generating chamber disposed at the inner of a shell having seal cover, a transmission window seal by transmission glass is arranged on one side of the shell, wherein, the two ends of the chamber respectively has lamp holders for mounting at least two lamps, and a reflection plate is disposed on one side of the lamps, and each lamp holder is mounted on the cover plate by insulation pillars and is connected to the power supply base, sub water inlets and sub water back ports arranged at the two ends of cooling water channel of each lamp holder are respectively connected to corresponding water back ports and water inlets of the water diversion bus, cooling water channel of the water diversion bus is connected to the same of the cover plate, and some cooling water channels of the shell are connected to the same of the cover plate, and air inlets and air outlets are respectively arranged on both sides of the shell. The invention is fit for radiation heating the movable wafer or fixed wafer of the semiconductor device, and has no pollution, can work in vacuum condition, and is fit for heating material such as silicon wafer which requires high cleanliness.

Description

The enclosed infrared heating device of semiconductor wafer
Technical field
The present invention is the semi-conducting material process equipment, further is meant the enclosed infrared heating device that semiconductor wafer is heated.
Background technology
The contactless radiation heating of the general employing of wafer heating on the semiconductor process line, its heating fluorescent tube of traditional heater directly heats in the face of wafer, fluorescent tube is cooling not, because heat radiation is not smooth, cause the temperature rise of tube face and surface of the light tube very high, cause the vaporization at high temperature thing to influence the cleanliness factor of system, the high temperature of surface of the light tube makes tube glass shell softening, influence the life-span of fluorescent tube, the efficiency of heating surface is not high yet.Along with the cleanliness factor requirement of semiconductor fabrication process line is more and more higher, the wafer heating needs the heater of pollution-free mode of heating and high thermal efficiency.
Summary of the invention
The technical problem to be solved in the present invention is, defective at the prior art existence, a kind of enclosed infrared heating device of semiconductor wafer is proposed, it has nonstaining property, can under vacuum environment, work, and can be used to heat materials such as the exigent silicon chip of cleanliness factor, heating object can be moving object, also can be fixed object.
Technical solution of the present invention is, the enclosed infrared heating device of described semiconductor wafer comprises the housing of with closure plate, enclosure interior is the infrared ray generation cavity, its design feature is, housing one side that described seal cover board is relative is provided with the transmission window by the transmissive glass sealing, be provided with at least two that two ends are installed in respectively on fluorescent tube row seat and the tube face corresponding to described transmission window in the described infrared ray generation cavity and heat fluorescent tubes, the heating fluorescent tube opposite side relative with described transmission window is equipped with reflecting plate, each tube face corresponding with heating fluorescent tube quantity links to each other through the insulation Power Block that insulated column is installed on the cover board and its electrode is contained in together on the cover plate, the branch water inlet at the cooling-water duct two ends in described each tube face and branch water return outlet are respectively by corresponding water return outlet and the water inlet connection of corresponding water pipe with branch water row, the cooling-water duct that is provided with among the branch water row of described water inlet and water return outlet is connected with cooling-water duct in the cover plate and forms water cooling labyrinth through its total water return outlet and total water inlet, also there is the multichannel cooling-water duct to be communicated with in the described housing, at least one air inlet and air outlet arranged respectively in the corresponding both sides of housing with the described cooling-water duct in the cover plate.
Below the present invention made further specify.
Referring to Fig. 1 and Fig. 2, device of the present invention comprises the housing 18 of with closure plate 6, housing 18 inside are infrared ray generation cavity 19, its design feature is, described seal cover board 6 relative housing 18 1 sides are provided with the transmission window 20 by transmissive glass 14 sealings, be provided with two ends corresponding to described transmission window 20 in the described infrared ray generation cavity 19 and be installed at least two heating fluorescent tubes 8 on fluorescent tube row seat 11 and the tube face 16 respectively, heating fluorescent tube 8 opposite sides relative with described transmission window 20 are equipped with reflecting plate 7, each tube face 16 corresponding with heating fluorescent tube 8 quantity links to each other through the insulation Power Block 5 that insulated column 1 is installed on the cover plate 6 and its electrode is contained in together on the cover plate 6, referring to Fig. 1,2,4,5, the branch water inlet 21 at the cooling-water duct two ends in described each tube face 16 and branch water return outlet 22 are respectively by corresponding water return outlet 23 and water inlet 24 connections of corresponding water pipe 4 with branch water row 17, the cooling-water duct that is provided with among the branch water row 17 of described water inlet 24 and water return outlet 23 is connected with cooling-water duct in the cover plate 6 and forms water cooling labyrinth through its total water return outlet 25 and total water inlet 26, also there is multichannel (referring to shown in Figure 1) cooling-water duct 3 to be communicated with in the described housing 18, at least one air inlet 2 and air outlet 12 arranged respectively in housing 18 corresponding both sides with the described cooling-water duct in the cover plate 6.Referring to Fig. 1, also can between reflecting plate 7 and cover plate 6, be provided with cooling jacket 9, and can in fluorescent tube row seat 11, cooling-water duct be set.
The know-why of the present invention and the course of work are (referring to Fig. 1), power supply is powered to heating fluorescent tube 8 by insulation Power Block 5, fluorescent tube just produces powerful infrared radiation, infrared ray heats by having 14 pairs of wafers 10 of good light permeability and stable on heating transmissive glass, and expelling plate 7 can go back infrared reflection as much as possible to wafer 10 heating, has effectively improved the efficiency of heating surface of device; The good cooling jacket 9 of cooling effect can effectively reduce reflecting plate 7 and cavity temperature; All water flowing coolings in fluorescent tube row seat 11 and each tube face 16 and housing 18, the cover plate 6, and in air inlet 2 and 12 pairs of chambeies of air outlet, carry out ventilate cooling and described surface of the light tube is fully dispelled the heat of compressed air, whole device good cooling results.
As known from the above, the present invention is a kind of enclosed infrared heating device of semiconductor wafer, is applicable to the movable wafer of semiconductor equipment or the radiation heating of fixed wafer (as silicon chip), and the residing vacuum degree of heating object can be better than 1 * 10 -4More than the Pa, heating-up temperature can be 400 ℃ of-800 ℃ of scopes, heating power between 5KW-25KW, heated chip size 100-205mm; Its nonstaining property can be worked under vacuum environment, and can be used to heat materials such as the exigent silicon chip of cleanliness factor.
Description of drawings
Fig. 1 is the vertical sectional structure schematic diagram of an embodiment of the present invention;
Fig. 2 be among Fig. 1 A-A to sectional structure;
Fig. 3 be among Fig. 2 B-B to the partial structurtes of analysing and observe;
Fig. 4 is a kind of embodiment sectional structure schematic diagram of branch water row 17;
Fig. 5 is a kind of example structure front view of tube face 16;
In described accompanying drawing:
The 1-insulated column, the 2-air inlet, the 3-cooling-water duct,
4-water pipe, the 5-Power Block that insulate, the 6-cover plate,
The 7-reflecting plate, 8-heats fluorescent tube, the 9-cooling jacket,
The 10-wafer, 11-fluorescent tube row seat, the 12-air outlet,
The 13-sealing ring, the 14-transmissive glass, the 15-pressing plate,
16-tube face, 17-divide water row, the 18-housing,
19-infrared ray generation cavity, the 20-transmission window, 21-divides water inlet,
22-divides water return outlet, the 23-water return outlet, and the 24-water inlet,
The total water return outlet of 25-, the 26-total water inlet.
Embodiment
According to apparatus of the present invention of accompanying drawing and said structure, heating fluorescent tube 8 is five, and corresponding tube face 16 is five, device heating power 25KW, and heating-up temperature is the highest 800 ℃; Transmissive glass shown in Figure 1 14 adopts pure quartz glasses, it with housing 18 between high-temperature resistant seal ring 13 is housed, and fix with pressing plate 15, the making of reflecting plate 7 usefulness brass sheetes, reflecting surface is gold-plated; Insulation Power Block 5 adopts the porcelain binding post that heating fluorescent tube 8 is carried out the vacuum insulation power supply.

Claims (5)

1, a kind of enclosed infrared heating device of semiconductor wafer, the housing (18) that comprises with closure plate (6), housing (18) inside is infrared ray generation cavity (19), it is characterized in that, housing (18) one sides that described seal cover board (6) is relative are provided with the transmission window (20) by transmissive glass (14) sealing, be provided with at least two that two ends are installed in respectively on fluorescent tube row seat (11) and the tube face (16) corresponding to described transmission window (20) in the described infrared ray generation cavity (19) and heat fluorescent tubes (8), heating fluorescent tube (8) opposite side relative with described transmission window (20) is equipped with reflecting plate (7), each tube face (16) corresponding with heating fluorescent tube (8) quantity is installed in the insulation Power Block (5) that cover plate (6) is gone up and its electrode is contained in together on the cover plate (6) through insulated column (1) and links to each other, the branch water inlet (21) at the cooling-water duct two ends in the described tube face (16) and branch water return outlet (22) are respectively by corresponding water return outlet (23) and water inlet (24) connection of corresponding water pipe (4) with branch water row (17), the cooling-water duct that is provided with among the branch water row (17) of described water inlet (24) and water return outlet (23) is connected with cooling-water duct in the cover plate (6) and forms water cooling labyrinth through its total water return outlet (25) and total water inlet (26), also there is the described cooling-water duct in the same cover plate of multichannel cooling-water duct (3) (6) to be communicated with in the described housing (18), at least one air inlet (2) and air outlet (12) arranged respectively in the corresponding both sides of housing (18).
2, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, between reflecting plate (7) and cover plate (6), be provided with cooling jacket (9).
3, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, in fluorescent tube row's seat (11), cooling-water duct is set.
4, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, described transmissive glass (14) adopts pure quartz glass.
5, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, described reflecting plate (7) is made of brass sheet, and reflecting surface is gold-plated.
CNB2006100313694A 2006-03-17 2006-03-17 Enclosed infrared heating device for semiconductor chip Expired - Fee Related CN100428404C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006100313694A CN100428404C (en) 2006-03-17 2006-03-17 Enclosed infrared heating device for semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006100313694A CN100428404C (en) 2006-03-17 2006-03-17 Enclosed infrared heating device for semiconductor chip

Publications (2)

Publication Number Publication Date
CN101038856A CN101038856A (en) 2007-09-19
CN100428404C true CN100428404C (en) 2008-10-22

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103076822B (en) * 2012-12-27 2015-09-09 烟台睿创微纳技术有限公司 Regulate control method and the implement device thereof for the treatment of device temperature processed in vacuum equipment
CN105158873A (en) * 2015-08-31 2015-12-16 武汉宇虹环保产业发展有限公司 High-temperature sealed reflector device
CN105551922B (en) * 2015-12-11 2018-07-24 中国电子科技集团公司第四十八研究所 A kind of SiC high temperature high-energy aluminum ion implantation apparatus
CN107046081B (en) * 2017-03-07 2019-06-14 东莞市科隆威自动化设备有限公司 A kind of anti-light furnace that declines
CN112738928B (en) * 2020-12-04 2022-11-22 上海航天精密机械研究所 Universal combined cooling type modular radiation heater

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN88211587U (en) * 1988-04-01 1988-12-28 上海市交通大学 Rapid annealing device
US5194401A (en) * 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
US5345534A (en) * 1993-03-29 1994-09-06 Texas Instruments Incorporated Semiconductor wafer heater with infrared lamp module with light blocking means
US5693578A (en) * 1993-09-17 1997-12-02 Fujitsu, Ltd. Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN88211587U (en) * 1988-04-01 1988-12-28 上海市交通大学 Rapid annealing device
US5194401A (en) * 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
US5345534A (en) * 1993-03-29 1994-09-06 Texas Instruments Incorporated Semiconductor wafer heater with infrared lamp module with light blocking means
US5693578A (en) * 1993-09-17 1997-12-02 Fujitsu, Ltd. Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance

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C06 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Hunan Hongtaiyang New Energy Science and Technology Co., Ltd.

Assignor: No.48 Inst. China Electronics Tech Group

Contract fulfillment period: 2009.9.16 to 2019.9.15

Contract record no.: 2009430000163

Denomination of invention: Enclosed infrared heating device for semiconductor chip

Granted publication date: 20081022

License type: Exclusive license

Record date: 20091027

LIC Patent licence contract for exploitation submitted for record

Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.9.16 TO 2019.9.15; CHANGE OF CONTRACT

Name of requester: HUNAN HONGTAIYANG NEW ENERGY SCIENCE AND TECHNOLOG

Effective date: 20091027

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081022

Termination date: 20180317