CN100428415C - Method for preparing nano electrode based on silicon nitride hollowed-out mask - Google Patents
Method for preparing nano electrode based on silicon nitride hollowed-out mask Download PDFInfo
- Publication number
- CN100428415C CN100428415C CNB2005100852943A CN200510085294A CN100428415C CN 100428415 C CN100428415 C CN 100428415C CN B2005100852943 A CNB2005100852943 A CN B2005100852943A CN 200510085294 A CN200510085294 A CN 200510085294A CN 100428415 C CN100428415 C CN 100428415C
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- hollow out
- substrate
- electrode
- hollowed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
This invention relates to a method for preparing nm electrodes based on SiN4 hollow out mask including: 1, depositing SiN4 films on double sides of a chip, 2, coating a resist on the chip to photo-etch it to get a hollow out window, 3, utilizing the resist as the mask to etch the SiN4 fillm, 4, taking the SiN4 as the mask to erode the chip by a wet method to get a SiN4 hollow out film, 5, etching electrode patterns with a focused ionic beam on the hollow out SiN4 film, 6, taking the film as the mask to evaporate or spray the substrate to get the electrodes.
Description
Technical field
The invention belongs to the technical field of micro and nano fabrication in microelectronics and the nanoelectronics, particularly a kind of preparation method of nano-scale electrode of the organic molecular device based on silicon nitride hollowed-out mask can be widely used in the nano-scale electrode preparation of all kinds of devices.
Background technology
The traditional metal or the mask technique of other materials, the electrode yardstick of preparation can't be produced the electrode of nanometer scale mostly tens or micron dimension up to a hundred.
Summary of the invention
The purpose of this invention is to provide a kind of method for preparing nano electrode based on silicon nitride hollowed-out mask, it at first prepares the hollow out silicon nitride film, makees mask with this then and obtains nano-electrode.
For achieving the above object, technical solution of the present invention provides the method for preparing nano electrode based on silicon nitride hollowed-out mask, be via a photoetching, a dry etching, a wet etching, focused-ion-beam lithography, flush distillation or a sputter, and the acquisition nano-electrode; Comprise that step is as follows:
Step 2, on the one side of substrate spin-coating erosion resistant agent, photoetching the has obtained hollow out hollow out window of resist;
Step 3, by this hollow out the hollow out window of resist, etching the has formed hollow out corrosion window of silicon nitride film of this face;
Step 4, by this corrosion window, the wet etching substrate the has obtained hollow out hollow out window of substrate;
Step 5, by this hollow out adopt focused particle beam on the another side silicon nitride layer, to etch electrode pattern on the hollow out window of substrate;
Step 6, utilize the hollow out silicon nitride film of gained to make mask, evaporation or splash-proofing sputtering metal on substrate form electrode.
Described method for preparing nano electrode based on silicon nitride hollowed-out mask, its described step 1, the silicon nitride film of two-sided deposit is to adopt the method for chemical vapor deposition to obtain on substrate.
Described method for preparing nano electrode based on silicon nitride hollowed-out mask, its described step 2, resist is the BP218 resist, behind spin-coating erosion resistant agent on the substrate, carries out preceding baking with hot plate or baking oven, photoetching again, the acquisition hollow out of developing window.
Described method for preparing nano electrode based on silicon nitride hollowed-out mask, its described step 3, the silicon nitride in the etching hollow out window is to adopt the fluorine base gas dry etching.
Described method for preparing nano electrode based on silicon nitride hollowed-out mask, its described step 6, the interior rice electrode on the substrate is to adopt the method for evaporation or splash-proofing sputtering metal gold or platinum to obtain.
Described method for preparing nano electrode based on silicon nitride hollowed-out mask, after its described step 6, separate masks figure and substrate obtain nano-electrode required on the substrate again.
Method of the present invention is utilized focused particle beam etching hollow out silicon nitride to make mask and then can be reached nanometer scale.Than other nanoprocessing means, electron beam lithography etc. for example, the present invention utilizes silicon nitride film to make mask, evaporation or splash-proofing sputtering metal form electrode then, the formation of substrate top electrode need not photoetching, technology such as develops, peels off, can avoid these processes to the damage that some organic materials cause, solve the compatibility issue of organic material and microelectronic technique.
Description of drawings
Fig. 1-1 is to Fig. 1-the 7th, flow chart of the present invention;
Fig. 2-1 is to Fig. 2-the 8th, the flow chart of the embodiment of the invention.
Embodiment
The step of the inventive method is as follows: 1, two-sided deposition silicon nitride film on substrate; 2, spin-coating erosion resistant agent on substrate, photoetching obtains the hollow out window; 3, utilize the interior silicon nitride of resist shelter etching hollow out window; 4, utilize the nitride masking wet etching to obtain the silicon nitride hollowed-out film; 5, on the silicon nitride film of hollow out, adopt focused-ion-beam lithography to go out to have the electrode pattern of nano-scale; 6, utilize resulting hollow out silicon nitride film to make mask, evaporation or splash-proofing sputtering metal obtain electrode on substrate.
The preparation method of nano-electrode of the present invention is through a photoetching, a dry etching, a wet etching, focused-ion-beam lithography, flush distillation or a sputter, and obtains nano-electrode.
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description, see Fig. 1, wherein:
1, as Figure 1-1, two-sided deposition silicon nitride film 102 on substrate 101, silicon nitride film 102 are to adopt the method for chemical vapor deposition to obtain.
2, shown in Fig. 1-2, spin-coating erosion resistant agent on substrate, photoetching development obtain resist hollow out graph window 103.
3, as Figure 1-3, etching back side silicon nitride film 102 forms corrosion window;
4, shown in Fig. 1-4, the wet etching substrate obtains the silicon nitride film 102 of positive hollow out.
5, shown in Fig. 1-5, on the silicon nitride film 102 of hollow out, adopt focused-ion-beam lithography to obtain the electrode pattern 104 of nanometer scale.
6, shown in Fig. 1-6, on substrate 105, utilize the silicon nitride film 102 of hollow out to make mask, evaporation or splash-proofing sputtering metal obtain nano-electrode 106.
7, shown in Fig. 1-7, separate masks and substrate 105 obtain required nano-electrode 106.
The flow process of the embodiment of the invention, as shown in Figure 2:
1, shown in Fig. 2-1, two-sided deposition silicon nitride film 202 on substrate 201, silicon nitride film 202 adopt the method for low-pressure chemical vapor phase deposition to obtain.
2, shown in Fig. 2-2, spin coating BP218 resist 203 on substrate 201, and carry out preceding baking with hot plate or baking oven.
3, shown in Fig. 2-3, photoetching, the back of developing obtain hollow out graph window 204.
4, shown in Fig. 2-4, the silicon nitride film 202 in the etching hollow out graph window 204.
5, as shown in figure 25, do with hollow out graph window 204 and to shelter, adopt wet etching, obtain the silicon nitride film 202 of hollow out.
6, shown in Fig. 2-6, on silicon nitride film 202, adopt focused-ion-beam lithography to form electrode mask graph 205.
7, shown in Fig. 2-7, on dielectric substrate 206, utilize mask graph 205 to do mask electron beam evaporation metal and obtain bottom electrode 207, metal electrode 207 general gold or the platinum of adopting.
8, shown in Fig. 2-8, separate masks figure 205 obtains required electrode 207 with substrate 206.
Claims (6)
1, based on the method for preparing nano electrode of silicon nitride hollowed-out mask, be via a photoetching, a dry etching, a wet etching, focused-ion-beam lithography, flush distillation or a sputter, and the acquisition nano-electrode; It is characterized in that, comprise that step is as follows:
Step 1, on substrate two-sided deposition silicon nitride film;
Step 2, on the one side of substrate spin-coating erosion resistant agent, photoetching the has obtained hollow out hollow out window of resist;
Step 3, by this hollow out the hollow out window of resist, etching the has formed hollow out corrosion window of silicon nitride film of this face;
Step 4, by this corrosion window, the wet etching substrate the has obtained hollow out hollow out window of substrate; Step 5, by this hollow out adopt focused particle beam on the another side silicon nitride layer, to etch electrode pattern on the hollow out window of substrate;
Step 6, utilize the hollow out silicon nitride film of gained to make mask, evaporation or splash-proofing sputtering metal on substrate form electrode.
2, the method for preparing nano electrode based on silicon nitride hollowed-out mask according to claim 1 is characterized in that, described step 1, and the silicon nitride film of two-sided deposit on substrate is to adopt the method for chemical vapor deposition to obtain.
3, the method for preparing nano electrode based on silicon nitride hollowed-out mask according to claim 1 is characterized in that, described step 2, resist is the BP218 resist, behind spin-coating erosion resistant agent on the substrate, carry out preceding baking with hot plate or baking oven, photoetching again, the acquisition hollow out of developing window.
4, the method for preparing nano electrode based on silicon nitride hollowed-out mask according to claim 1 is characterized in that, described step 3, and the silicon nitride in the etching hollow out window is to adopt the fluorine base gas dry etching.
5, the method for preparing nano electrode based on silicon nitride hollowed-out mask according to claim 1 is characterized in that, described step 6, and the nano-electrode on the substrate is to adopt the method for evaporation or splash-proofing sputtering metal gold or platinum to obtain.
6, the method for preparing nano electrode based on silicon nitride hollowed-out mask according to claim 1 is characterized in that, after the described step 6, separate masks figure and substrate obtain nano-electrode required on the substrate again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100852943A CN100428415C (en) | 2005-07-22 | 2005-07-22 | Method for preparing nano electrode based on silicon nitride hollowed-out mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100852943A CN100428415C (en) | 2005-07-22 | 2005-07-22 | Method for preparing nano electrode based on silicon nitride hollowed-out mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1901141A CN1901141A (en) | 2007-01-24 |
| CN100428415C true CN100428415C (en) | 2008-10-22 |
Family
ID=37656972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100852943A Expired - Fee Related CN100428415C (en) | 2005-07-22 | 2005-07-22 | Method for preparing nano electrode based on silicon nitride hollowed-out mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100428415C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110923623A (en) * | 2019-12-06 | 2020-03-27 | 苏州逸峰新材料科技有限公司 | Preparation method of magnetic field adsorption auxiliary mask evaporation micro-nano structure |
| CN112563124A (en) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | Preparation method of large-area ultrathin hollowed-out hard mask |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01238176A (en) * | 1988-03-18 | 1989-09-22 | Nec Corp | Compound semiconductor field-effect transistor and manufacture thereof |
| US5308442A (en) * | 1993-01-25 | 1994-05-03 | Hewlett-Packard Company | Anisotropically etched ink fill slots in silicon |
-
2005
- 2005-07-22 CN CNB2005100852943A patent/CN100428415C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01238176A (en) * | 1988-03-18 | 1989-09-22 | Nec Corp | Compound semiconductor field-effect transistor and manufacture thereof |
| US5308442A (en) * | 1993-01-25 | 1994-05-03 | Hewlett-Packard Company | Anisotropically etched ink fill slots in silicon |
Non-Patent Citations (1)
| Title |
|---|
| Sub-um wide channels with surface potential compensated byfocused Si ion beam implantation. Toshimasa Fujisawa,Tadashi Saku, Yoshiro Hirayama, SeigoTarucha.Appl. Phys. Lett.,Vol.63 No.1. 1993 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1901141A (en) | 2007-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4944989B2 (en) | Method for synthesizing ITO electron beam resist and method for forming ITO pattern using the same | |
| CN101430503B (en) | Double-layer glue removing method used for electron beam lithography stripping | |
| CN103235482A (en) | PDMS (polydimethylsiloxane)-based functional polymer patterning method | |
| Lussi et al. | Selective molecular assembly patterning at the nanoscale: a novel platform for producing protein patterns by electron-beam lithography on SiO2/indium tin oxide-coated glass substrates | |
| CN110923623A (en) | Preparation method of magnetic field adsorption auxiliary mask evaporation micro-nano structure | |
| Jeong et al. | A new approach for high-yield metal–molecule–metal junctions by direct metal transfer method | |
| CN108227057A (en) | A kind of SERS substrates based on grating resonance and preparation method thereof | |
| CN101566799B (en) | Method for preparing hollowed-out polyimide evaporation shadow mask | |
| CN104992905B (en) | A kind of boron nitride substrate surface step lithographic method | |
| CN100428415C (en) | Method for preparing nano electrode based on silicon nitride hollowed-out mask | |
| CN111613661B (en) | Tunnel junction, preparation method and application thereof | |
| CN104878355B (en) | A kind of nanometer dielectric layer preparation method based on magnetron sputtering technique | |
| Payne et al. | Monolayer-mediated patterning of integrated electroceramics | |
| CN104409635B (en) | Organic thin film transistor and manufacturing method thereof, array substrate, and display unit | |
| EP1393366A2 (en) | Method of manufacturing an electronic device | |
| Ohtake et al. | DNA nanopatterning with self-organization by using nanoimprint | |
| CN108569850A (en) | A kind of multiple layer metal mask seed layer and its manufacturing method for glass HF corrosion | |
| CN105551910B (en) | Field Electron Emission cathode array and preparation method thereof based on metal molybdenum substrate | |
| CN100543583C (en) | Method at photosensitive material surface coverage and patterning nanometer structure | |
| CN100373588C (en) | Method for preparing organic molecule device with cross line array structure | |
| CN1979341A (en) | Method for making ultraviolet solidified nano impression formboard | |
| Hua et al. | Spatial patterning of colloidal nanoparticle-based thin film by a combinative technique of layer-by-layer self-assembly and lithography | |
| Hofmann et al. | Selective pattern transfer of nano-scale features generated by FE-SPL in 10 nm thick resist layers | |
| CN113237932B (en) | Preparation method of counter electrode type nano electric sensor | |
| JP2005175164A (en) | Manufacturing method of nano gap electrode, and element using nano gap electrode manufactured by the method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20180722 |