CN100435483C - Design method of quartz crystal coated electrode - Google Patents
Design method of quartz crystal coated electrode Download PDFInfo
- Publication number
- CN100435483C CN100435483C CNB2006100395919A CN200610039591A CN100435483C CN 100435483 C CN100435483 C CN 100435483C CN B2006100395919 A CNB2006100395919 A CN B2006100395919A CN 200610039591 A CN200610039591 A CN 200610039591A CN 100435483 C CN100435483 C CN 100435483C
- Authority
- CN
- China
- Prior art keywords
- electrode
- quartz crystal
- crystal
- plated
- design method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The present invention relates to a design method of a quartz crystal filmed electrode, which is characterized in that in a manufacturing process, firstly, rectangular silver or gold conducting films are plated on both sides of a quartz crystal, and simultaneously an electrode whose thickness is 50 nm to 250 nm is plated on the side of the quartz crystal; secondly, the electrode and a ceramic base are connected by conductive adhesive to form an oscillator which can freely oscillate; then, a tunnel furnace is used for solidifying, and a steaming plating method or an etching method is used for modulating and packaging. Thus, a crystal resonant function is realized in a circuit. The present invention has the advantages that the electrode with certain thickness is plated on the side of the quartz crystal and is connected with an upper electrode and a lower electrode which are corresponding to get rid of the dependence on bottom adhesion connection, and a product can also normally and effectively work without surface adhesive; the qualified rate of products in a manufacturing process is greatly improved; the product reliability is enhanced. Compared with a traditional design method of a filmed electrode, the present invention has the advantage that even if the bottom adhesive and the surface adhesive are not connected at all, crystal electric parameters can not be influenced.
Description
Technical field
What the present invention relates to is design method of quartz crystal coated electrode, is mainly used in the electrode plated film processing of SMD type quartz plate, belongs to the technical field that quartz electronic components and parts are made.
Background technology
At present, mobile communication, consumer electronics, automobile is audio-visual, aspects such as IT information all comprise that to electronic devices and components crystal proposes the requirement of more miniaturization, size has become 7*5mm at present, 6*3.5mm, 5*3.2mm, 4.0*2.5mm, 3.2*2.5mm it is even littler. owing to sharply dwindling of size, a lot of new problems have appearred in the product processing, if still according to the method for early stage DIP type crystal product coated electrode design, a series of problems such as product reliability is bad will appear. in quartz crystal coated operation, for the electrode shape that needing to obtain, the electrode mask anchor clamps that need correspondence customized. existing mask jig Design is just considered the shape and size of main electrode part, with the crystal electric parameter that need to obtain, as direct capacitance, dynamic condenser, resistance value or the like. this method for designing is applicable to early stage DIP type (dual inline type) crystal oscillator product, along with the product miniaturization, installation form also be converted to SMD type (surface-adhered type) by the DIP type though. be pro forma change, but brought the difference on many processing methods, as a minimizing of glue amount, the variation of some glue position and the variation of packing forms.Existing SMD type crystal oscillator adopts 4 dotting glue methods at a glue process, promptly on the gold-plated electrode of base of ceramic, put two primer points earlier, wafer behind the plated film is placed on the 2 primer glue points then, guarantee that simultaneously the wafer auxiliary electrode touches the glue point fully, on wafer, put two face glue points at last, these two glue point positions are connecting wafer auxiliary electrode and two primer points just. and above process is all finished by automatically dropping glue equipment, generally speaking, owing to worn and torn by the spot gluing equipment localization part, the difference of wafer size, chip sucking is put the influence of factors such as place's air pressure fluctuation, the position of wafer in base of ceramic is engraved in variation when being. when wafer is displaced to certain position, will produce primer and face glue bad connection even unconnected problem, it is bigger than normal or depressed that this problem will show as crystal impedance in subsequent handling, causes qualification rate to reduce and cost waste.
Summary of the invention
The objective of the invention is to defective, propose a kind of method for designing of new quartz crystal coated electrode, fundamentally solve problems such as primer and face glue bad connection at above-mentioned existence.Plating certain thickness electrode in the side of quartz wafer,, can guarantee that also the crystal electric parameter is unaffected even primer is not connected fully with face glue like this. the qualification rate of subsequent handling improves greatly, and the consumption of cost reduces greatly.
Technical solution of the present invention: it is characterized in that in manufacture process, at first plate the silver or the golden conducting film of rectangle by two sides at quartz wafer, formation makes the two sides of quartz wafer plate the electrode of certain thickness (100nm and 200nm): secondly by conducting resinl connection electrode part and base of ceramic, and the ticker that formation can free vibration; Thereby in circuit, realize the function of crystal resonance.
Advantage of the present invention: by changing the design of traditional coated electrode, make the side of quartz wafer plate certain thickness electrode, connect corresponding upper/lower electrode, thereby break away from the dependence that bottom surface glue is connected, even without face glue, product also can normally be worked effectively. and the product processing qualification rate improves greatly. and product reliability gets a promotion.The present invention compares with traditional coated electrode method for designing, even primer is not connected fully with face glue, can guarantee that also the crystal electric parameter is unaffected, and the product processing qualification rate is improved greatly. and product reliability gets a promotion.
Description of drawings:
Accompanying drawing 1 is a design diagram of the present invention.
Among the figure 1 is quartz wafer, the 2nd, main electrode, the 3rd, auxiliary electrode, the 4th, side electrode.
Embodiment
In manufacture process, the silver conductive film that plates rectangle by two sides and side at first at quartz wafer 1, the thickness of the side electrode 4 of quartz wafer 1 is 200nm: secondly by conducting resinl (XA819A) connection electrode part and base of ceramic (5*3.2 size), and the ticker that formation can free vibration; Process of passing through tunnel stove curing once more, vapour deposition method or etching method frequency modulation and encapsulation, thus in circuit, realize the function of crystal resonance (specifically).
In manufacture process, the silver conductive film that plates rectangle by two sides and side at first at quartz wafer 1, the thickness of the side electrode 4 of quartz wafer 1 is 100nm: secondly by conducting resinl (3301F) connection electrode part and base of ceramic (7*5 size), and the ticker that formation can free vibration; Process of passing through tunnel stove curing once more, vapour deposition method or etching method frequency modulation and encapsulation, thus in circuit, realize the function of crystal resonance (specifically).
Claims (1)
1, design method of quartz crystal coated electrode is characterized in that one, by silver or golden conducting film that two sides and side at quartz wafer plate rectangle, and the thickness of the side electrode of quartz wafer is 100nm or 200nm; Two, by conducting resinl connection electrode part and base of ceramic, the ticker that formation can free vibration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100395919A CN100435483C (en) | 2006-04-17 | 2006-04-17 | Design method of quartz crystal coated electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100395919A CN100435483C (en) | 2006-04-17 | 2006-04-17 | Design method of quartz crystal coated electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1832341A CN1832341A (en) | 2006-09-13 |
| CN100435483C true CN100435483C (en) | 2008-11-19 |
Family
ID=36994386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100395919A Active CN100435483C (en) | 2006-04-17 | 2006-04-17 | Design method of quartz crystal coated electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100435483C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106803744A (en) * | 2015-11-25 | 2017-06-06 | 中国科学院上海微系统与信息技术研究所 | The integrated micro-evaporator structure of micro-evaporator, oscillator and its frequency Correction Method |
| CN110027123B (en) * | 2018-12-27 | 2021-03-16 | 李宗杰 | Quartz photoetching wafer and cutting technology |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789845A (en) * | 1994-11-24 | 1998-08-04 | Mitsubishi Denki Kabushiki Kaisha | Film bulk acoustic wave device |
| CN2459760Y (en) * | 2000-11-16 | 2001-11-14 | 浙江嘉康电子股份有限公司 | Ceramic casing chip type piezoelectric element |
-
2006
- 2006-04-17 CN CNB2006100395919A patent/CN100435483C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789845A (en) * | 1994-11-24 | 1998-08-04 | Mitsubishi Denki Kabushiki Kaisha | Film bulk acoustic wave device |
| CN2459760Y (en) * | 2000-11-16 | 2001-11-14 | 浙江嘉康电子股份有限公司 | Ceramic casing chip type piezoelectric element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1832341A (en) | 2006-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105897210A (en) | Grooved surface acoustic filter chip packaging structure and manufacturing method thereof | |
| TW200737383A (en) | Substrate with built-in chip and method for manufacturing substrate with built-in chip | |
| CN202772854U (en) | Chip-scale packaged surface acoustic wave device | |
| CN105870104A (en) | Packaging structure with electromagnetic shielding function | |
| CN101127343A (en) | Structure for integrating IC integration base board and carrier board, its manufacturing method and manufacturing method of electronic device | |
| CN105810666A (en) | Fabrication method for package structure having electromagnetic shielding function | |
| CN105897218A (en) | Grooved buried hole type surface acoustic filter chip packaging structure and manufacturing method thereof | |
| US20130134300A1 (en) | Optical sensor device and method of manufacturing the same | |
| US7934306B2 (en) | Method for packaging micro electromechanical systems microphone | |
| CN111383927A (en) | Chip packaging structure and packaging method | |
| CN105897219A (en) | Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof | |
| CN105742255A (en) | Metal-wafer-level groove buried hole type surface sound filtering chip packaging structure and method | |
| CN100435483C (en) | Design method of quartz crystal coated electrode | |
| CN105210462A (en) | Method for manufacturing component-embedded substrate, and component-embedded substrate | |
| CN205609499U (en) | Wafer level surface sound filtering chip package structure | |
| CN105742195A (en) | Manufacturing method for etching buried hole-type surface sound filter chip packaging structure | |
| CN105810597B (en) | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure | |
| CN105762085B (en) | Metal disk buried via hole type surface sound filtering chip encapsulating structure and manufacturing method | |
| CN105810596A (en) | Fabrication method of etched surface acoustic filter chip package structure | |
| CN205609498U (en) | Buried via hole type surface sound filtering chip package structure | |
| CN102970831A (en) | Vacuum adsorption connecting and binding process for integrated circuit (IC) card electronic chip and flexible printed circuit board | |
| CN105870077A (en) | Buried hole-type surface acoustic wave filter chip packaging structure and manufacturing method thereof | |
| CN106067376B (en) | A kind of processing method of ultra-thin surface-mount type ceramic capacitor | |
| US8844123B2 (en) | Method of manufacturing a hollow surface mount type electronic component | |
| CN105846038A (en) | Metal wafer level etching surface noise filter chip packaging structure manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: NANJING CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Free format text: FORMER NAME: NANJING HUALIANXING ELECTRONIC CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 210028 Nanjing, China central gate, Maigaoqiao, China, No., No. 1 Patentee after: Nanjing China Electronics Panda Crystal Technology Corporation Address before: 210028 Nanjing, China central gate, Maigaoqiao, China, No., No. 1 Patentee before: Nanjing Hualianxing Electronic Co., Ltd. |