CN100437899C - Device for reducing the impurity in the processing environment and its method - Google Patents
Device for reducing the impurity in the processing environment and its method Download PDFInfo
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- CN100437899C CN100437899C CNB2006100029109A CN200610002910A CN100437899C CN 100437899 C CN100437899 C CN 100437899C CN B2006100029109 A CNB2006100029109 A CN B2006100029109A CN 200610002910 A CN200610002910 A CN 200610002910A CN 100437899 C CN100437899 C CN 100437899C
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Abstract
The invention provides a device and method of decreasing impurity in production circumstance. The device includes object to be produced which is in production circumstance, protection structure which can prevent impurity to pollute said object is set on the object to be produced, and adsorbed film which is at any area of the protection structure surface, the adsorbed film can adsorb the impurity in production circumstance. The invention also provides a method of decreasing impurity in production circumstance, it is included in the object to form a protection structure to avoid the impurity in production circumstance pollute the object, and adsorbed film which is at any area of the protection structure surface is formed to adsorb the impurity in production circumstance.
Description
Technical field
The invention provides a kind of semiconductor device, be particularly to a kind of devices and methods therefor that reduces the impurity in the processing environment.
Background technology
Along with healing, science and technology becomes progressive, the weeding out the old and bring forth the new of electronic product, and semiconductor applications and integrated circuit volume production processing procedure also more and more can not obtain scarce.And make along with volume production process technique and material improvement, semiconductor element physical dimension continue dwindle, relatively, industry is also more and more higher to the quality requirements of dust free room operating environment.The wafer current production technology has entered the processing procedure of 300mm, generally hopes with effective control and improvement to contaminant particles, and reaches the high processing environment quality requirements of high-tech industry for production.Main semiconductor and the panel of TaiWan, China made two kinds of industries at present, and the pollutant in the dust free room is based on soda acid gas or particulate.In the analysis and investigation in the past, monitor acid and alkali substance and gas formation in the dust free room environment less than 2.5 microns particulate, analysis result shows that its alkaline pollution project is all with ammonia (NH
3) and ammonium salt (NH
4 +) problem comparatively serious, the acid pollution project is then with by the sulfur dioxide (SO that is entered in the atmosphere
2) influence bigger.Moreover, micro-photographing process is being played the part of very important role always in IC makes, behind every low-light electricity that enters nano-scale and micro-fabrication technology, need very high micro image ability especially, such as understanding ground, good micro image ability and the impurity content degree on the light shield have great association.Therefore, such chemical pollutant confrontation light shield can be great injury, ammonia in the environment or ammonium radical ion and sulfur dioxide reaction meeting form ammonium sulfate precipitation on light shield, and then cause can't exposure imaging going out the patterned layer of normal size shape, make the element can't normal operation.Hence one can see that, and it is very important key factor that the processing environment state of light shield is kept.
In present manufacture of semiconductor environment, light shield and micro-photographing process multiple protective have been given.Generally be that aluminium sash is formed on the side of the chromium film with pattern, be positioned over light shield top with a dianegative again, fall on the light mask image to avoid impurity.In micro-photographing process board part, below the placement wafer position of board, be provided with the chemicals filter, being unfavorable for the chemical substance of processing procedure in the filtering process environment, and in board, be provided with multiple tracks ammonia and sulfur dioxide filter above the light shield lay down location.Yet even under the safeguard of multilayer like this, impurity such as detected ammonia and sulfur dioxide are still higher in processing environment at ordinary times, and the sediment on the light shield is on the high side.Be with, the impurity that reduces in the processing environment is an important problem.
What pressed in the field now in view of the above, is the devices and methods therefor that can solve the interior impurity of minimizing processing environment of above-mentioned discussion problem.
Summary of the invention
The invention provides a kind of device that reduces the impurity in the processing environment, more particularly but not as qualification, also about reducing the device of impurity in the light shield environment.It comprises the thing to be made that places processing environment to be used for manufacture of semiconductor; be arranged at the protection structure of waiting to make on the thing; this protection structure is to avoid the contaminant particles in the processing environment to pollute above-mentioned thing to be made; this protection structure comprises at least one framework; this device also comprises the adsorbed film that is positioned at this arbitrary zone of protection body structure surface, and this adsorbed film is in the interior contaminant particles of processing environment for absorption.
In an embodiment, disclose a kind of device that reduces the impurity in the processing environment, it comprises the manufacture of semiconductor that places processing environment thing to be made, be arranged at manufacture of semiconductor and wait to make framework on the thing, wherein this framework is for to be made of sorbing material, be in contaminant particles in the processing environment with absorption, be arranged at the dianegative that this framework encloses the bottom, pollute this thing to be made to avoid the contaminant particles in the processing environment.
Among another embodiment; also introduce a kind of method that reduces the impurity in the processing environment; it is included in and is used for one of manufacture of semiconductor and waits to make on the thing and to form a protection structure; pollute this thing to be made to avoid the contaminant particles in the processing environment; and the arbitrary zone at the protection body structure surface forms an adsorbed film, is in contaminant particles in the processing environment with absorption.
The method of the impurity in the minimizing processing environment of the present invention, this thing to be made comprises a wafer or a light shield.
The method of the impurity in the minimizing processing environment of the present invention, this protection structure comprises at least one framework.
The method of the impurity in the minimizing processing environment of the present invention, this framework has a non-planar surface, and this adsorbed film is formed on this non-planar surface, increasing the surface area of this adsorbed film, and this non-planar surface goes the planarization processing procedure to make by sand-blast, etching method, etchback method, sedimentation etc.
The method of the impurity in the minimizing processing environment of the present invention, this framework comprises a silvery framework or a nickeliferous framework, directly forms adsorbed film with the arbitrary zone at this protection body structure surface.
The method of the impurity in the minimizing processing environment of the present invention, this impurity comprises sulfide or nitrogen hydride at least.
The method of the impurity in the minimizing processing environment of the present invention, this sulfide is for comprising that at least a sulfate ion and this nitrogen hydride are for comprising an ammonium radical ion at least.
The method of the impurity in the minimizing processing environment of the present invention, this adsorbed film comprises at least one argentiferous film or at least one nickeliferous film.
The present invention adopts the protection structure to avoid the contaminant particles in the processing environment to pollute thing to be made, and adopts adsorbed film to adsorb the contaminant particles that is in the processing environment, thereby has reduced the impurity in the processing environment.
Description of drawings
Fig. 1 is a processing flow figure, and it illustrates the method according to impurity in the employed minimizing processing environment among one or more embodiment of the present invention.
Fig. 2 is a generalized section, and it illustrates the device according to impurity in the minimizing processing environment of the method institute construction of Fig. 1.
Fig. 3 is a generalized section, and it illustrates the protection structure that discloses institute's construction according to the present invention.
Fig. 4 is a generalized section, and it illustrates the protection structure that discloses institute's construction according to the present invention.
Embodiment
Please refer to Fig. 1, one or more specific embodiment according to the present invention is described, discloses a kind of method that reduces the impurity in the processing environment.For example, the method is the device that can reach the impurity in as described in Figure 2 the minimizing processing environment and protection structure as Fig. 3 and Fig. 4, and even metal frame.As everyone knows, this method is only represented the processing flow of part, and more as understood, in part embodiment, can rearrange some particular step of this method, or add some step in this method.
Please cooperate Fig. 2 and with reference to figure 1, according to embodiments of the invention, in a processing environment, this method originates in step 12 and waits to make thing 110 to form one.This thing to be made can comprise thing to be made, wafer and/or the other materials that is used for manufacture of semiconductor.In one embodiment, this thing to be made is one to be present in the light shield in the manufacture of semiconductor environment.Then, shown in step 14, other forms a protection structure 20, and form an adsorbed film 220 in arbitrary zone on these protection structure 20 surfaces, wherein the function of this protection structure 20 is to avoid the contaminant particles 22 in the processing environment to pollute this thing to be made, and the absorption that act as of this adsorbed film 220 is in the interior contaminant particles 22 of this processing environment; For realizing the purpose of this embodiment, the step that forms adsorbed film 220 comprises chemical vapour deposition (CVD), physical vapour deposition (PVD), plating, sputter or rotary coating technology.Along with the (see figure 1) of finishing of step 14, then shown in step 16, the protection structure 20 that will have adsorbed film 220 is formed to be waited to make on arbitrary zone on thing 110 surfaces 120.In addition, in part embodiment, also can form the protection structure earlier, then on the protection structure, form adsorbed film again in waiting to make on the thing.
And according to Fig. 2, the disclosed a kind of device that reduces the impurity in the processing environment of the embodiment of the invention, it comprise one be used for manufacture of semiconductor wait to make thing 110; One is arranged at the protection structure that this waits to make thing 110 surfaces 120, pollutes this thing to be made to avoid the contaminant particles 22 in the processing environment; One is positioned at the adsorbed film 220 in these protection structure 20 surperficial arbitrary zones, is in contaminant particles 22 in this processing environment with absorption.In addition, the above-mentioned protection structure that has formed adsorbed film or do not formed adsorbed film as yet all can be bonded in by adhesive glue (adhesive) and wait to make on the thing, for example the light shield surface.
See also Fig. 3; in another embodiment; the present invention more addresses a kind of protection structure 200; this protection structure 200 can be one and is arranged at the framework of waiting to make on the thing 240; this framework is made of a sorbing material; can be a silvery framework or a nickeliferous framework, with direct formation adsorbed film 220A, at least one sulfide in the adsorbable processing environment or at least one nitrogen hydride.In this embodiment, the arbitrary zone that more is included in this sorbing material surface forms an adsorbed film, to strengthen adsorbing the contaminant particles that is in this processing environment.
See also Fig. 4, in another embodiment, the present invention more addresses a kind of protection structure 300, and it comprises: one is arranged at the framework of waiting to make on the thing 340, and this framework can be an aluminium sash; One is positioned at the adsorbed film 220B in framework 340 surperficial arbitrary zones, is in contaminant particles in this processing environment with absorption; One dianegative 360 is arranged at the bottom that this framework encloses, and pollutes this thing to be made to avoid the contaminant particles in the processing environment.
In other words, the protection structure can comprise at least one framework, as aluminium sash, and forms an adsorbed film at the protection body structure surface, is in contaminant particles in this processing environment with absorption; This adsorbed film can be an argentiferous film or nickeliferous film.And in part embodiment, the protection structure can be a sorbing material, and this sorbing material comprises silvery framework or nickeliferous framework, and this sorbing material can directly adsorb the contaminant particles that is in this processing environment, need not form an adsorbed film more in addition on its surface.In another embodiment, this protection structure is as for framework, can be a non-planar surface, to increase the surface area of this adsorbed film; For realizing the purpose of this embodiment, this non-planar surface can go the planarization processing procedure to make by sand-blast, etching method, etchback method, sedimentation etc., and in addition, above-mentioned sorbing material and adsorbed film need to be made up of the material of adsorbable impurity.This protection structure also can comprise and is formed at this framework by a dianegative 260 and 360 and enclosed the bottom, pollutes this thing to be made to avoid the contaminant particles in the processing environment, i.e. device acquisition duplicate protection for this reason.
With light shield thing to be made is example, dianegative 260 and 360 can be the film of a very thin thickness, to prevent that micronic dust or volatilization gas from polluting the light shield surface, the low distortion of little focal length variations and penetrance can be provided in exposure process simultaneously, for example by nitrocellulose (nitrocellulose) or cellulose ester (cellulose esters), or amorphous fluoropolymer material constitutes.Wherein, dianegative 260 and 360 can utilize the film viscose glue to stick on framework 240 and 340, and then with adhesive glue framework 240 and 340 is bonded on the light shield, therefore can increase the function of the contaminant particles in the absorption light shield processing environment of living in by sorbing material on the framework or adsorbed film.Generally speaking, above-mentioned adhesive glue can have been selected carrier or non-carrier form, and the adhesive glue that carrier is arranged is a kind of pressure sensing type acryl resin or bipeltate viscose glue or solid-state carrier of double spread; The adhesive glue of non-carrier can be bonded on the framework as the conversion adhesive tape of individual layer or utilize that heat is melted, UV sclerosis or the founding of pressure sensing type emulsification viscose glue be on framework.
In addition, impurity is that the pollutant in the processing environment is a granulometric impurity, and it can comprise at least one sulfide or at least one nitrogen hydride, in part embodiment, and impurity even may comprise a sulfate ion or an ammonium radical ion.
The protection structure 200 and 300 that reduces impurity in the processing environment also can comprise other kenels that one or more can be spreaded to by this exposure scope; and can reach the device 100 that reduces impurity in the manufacture of semiconductor environment by method shown in Figure 1, more be pushed into and form the various aspects that reduce the device of impurity in the processing environment.
Though the present invention by the preferred embodiment explanation as above, this preferred embodiment is not in order to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability this preferred embodiment is made various changes and replenished, so protection scope of the present invention is as the criterion with the scope of claims.
Being simply described as follows of symbol in the accompanying drawing:
10: method
12,14,16: step
100: the device that reduces impurity in the processing environment
110: thing to be made
120: the surface
20,200,300: the protection structure
220,220A, 220B: adsorbed film
22: impurity
240,340: framework
260,360: dianegative
Claims (10)
1. a method that reduces the impurity in the processing environment is characterized in that, the method for the impurity in this minimizing processing environment comprises:
One wait to make on the thing and to form a protection structure what be used for manufacture of semiconductor, pollute this thing to be made to avoid the contaminant particles in the processing environment; And
Arbitrary zone at this protection body structure surface forms an adsorbed film, is in contaminant particles in this processing environment with absorption.
2. the method for the impurity in the minimizing processing environment according to claim 1 is characterized in that this thing to be made comprises a wafer or a light shield.
3. the method for the impurity in the minimizing processing environment according to claim 1 is characterized in that this protection structure comprises at least one framework.
4. the method for the impurity in the minimizing processing environment according to claim 3, it is characterized in that, this framework has a non-planar surface, and this adsorbed film is formed on this non-planar surface, to increase the surface area of this adsorbed film, and this non-planar surface is by going the planarization processing procedure to make, and this goes the planarization processing procedure to comprise sand-blast, etching method, etchback method, sedimentation.
5. the method for the impurity in the minimizing processing environment according to claim 3 is characterized in that this framework comprises a silvery framework or a nickeliferous framework, directly forms adsorbed film with the arbitrary zone at this protection body structure surface.
6. the method for the impurity in the minimizing processing environment according to claim 1 is characterized in that this impurity comprises sulfide or nitrogen hydride at least.
7. the method for the impurity in the minimizing processing environment according to claim 6, it is characterized in that this sulfide is for comprising that at least a sulfate ion and this nitrogen hydride are for comprising an ammonium radical ion at least.
8. the method for the impurity in the minimizing processing environment according to claim 1 is characterized in that this adsorbed film comprises at least one argentiferous film or at least one nickeliferous film.
9. a device that reduces the impurity in the processing environment is characterized in that, the device of the impurity in this minimizing processing environment comprises:
One is used for the thing to be made of manufacture of semiconductor, places a processing environment;
One protection structure, be arranged at one be used for manufacture of semiconductor wait to make thing, pollute this thing to be made to avoid the contaminant particles in the processing environment, this protection structure comprises at least one framework;
One adsorbed film is positioned at arbitrary zone of this protection body structure surface, is in contaminant particles in this processing environment with absorption.
10. a device that reduces the impurity in the processing environment is characterized in that, the device of the impurity in this minimizing processing environment comprises:
One is used for the thing to be made of manufacture of semiconductor, places a processing environment;
One framework, be arranged at one be used for manufacture of semiconductor wait to make thing, wherein this framework is made of a sorbing material, is in contaminant particles in this processing environment with absorption;
One dianegative is arranged at the bottom that this framework encloses, and pollutes this thing to be made to avoid the contaminant particles in the processing environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100029109A CN100437899C (en) | 2006-01-27 | 2006-01-27 | Device for reducing the impurity in the processing environment and its method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100029109A CN100437899C (en) | 2006-01-27 | 2006-01-27 | Device for reducing the impurity in the processing environment and its method |
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| CN101009202A CN101009202A (en) | 2007-08-01 |
| CN100437899C true CN100437899C (en) | 2008-11-26 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465307B (en) * | 2007-12-17 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Standard mechanical interface equipment with microparticle adsorption pad |
| CN102262349B (en) * | 2010-05-24 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | Mask plate for semiconductor technique |
| WO2019052194A1 (en) * | 2017-09-13 | 2019-03-21 | 厦门三安光电有限公司 | Method for die-bonding semiconductor element and semiconductor element |
| CN109901360A (en) * | 2019-04-18 | 2019-06-18 | 德淮半导体有限公司 | The structure and forming method of mask plate |
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|---|---|---|---|---|
| US5773152A (en) * | 1994-10-13 | 1998-06-30 | Nec Corporation | SOI substrate having a high heavy metal gettering effect for semiconductor device |
| JP2001144273A (en) * | 1999-11-17 | 2001-05-25 | Denso Corp | Method for fabricating semiconductor device |
| US6508632B1 (en) * | 1997-12-23 | 2003-01-21 | Saes Getters S.P.A. | Getter system for purifying the confinement volume in process chambers |
| US20040206886A1 (en) * | 2000-04-20 | 2004-10-21 | Digirad Corporation, A Delaware Corporation | Fabrication of low leakage-current backside illuminated photodiodes |
| US20050239267A1 (en) * | 2004-04-23 | 2005-10-27 | Canon Kabushiki Kaisha | Substrate manufacturing method |
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2006
- 2006-01-27 CN CNB2006100029109A patent/CN100437899C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5773152A (en) * | 1994-10-13 | 1998-06-30 | Nec Corporation | SOI substrate having a high heavy metal gettering effect for semiconductor device |
| US6508632B1 (en) * | 1997-12-23 | 2003-01-21 | Saes Getters S.P.A. | Getter system for purifying the confinement volume in process chambers |
| JP2001144273A (en) * | 1999-11-17 | 2001-05-25 | Denso Corp | Method for fabricating semiconductor device |
| US20040206886A1 (en) * | 2000-04-20 | 2004-10-21 | Digirad Corporation, A Delaware Corporation | Fabrication of low leakage-current backside illuminated photodiodes |
| US20050239267A1 (en) * | 2004-04-23 | 2005-10-27 | Canon Kabushiki Kaisha | Substrate manufacturing method |
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| CN101009202A (en) | 2007-08-01 |
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