CN100445783C - Waveguide optical switch and making method thereof - Google Patents
Waveguide optical switch and making method thereof Download PDFInfo
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- CN100445783C CN100445783C CNB2007100559434A CN200710055943A CN100445783C CN 100445783 C CN100445783 C CN 100445783C CN B2007100559434 A CNB2007100559434 A CN B2007100559434A CN 200710055943 A CN200710055943 A CN 200710055943A CN 100445783 C CN100445783 C CN 100445783C
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Abstract
The invention relates to a 3D vertical coupling type waveguide optical swift and the preparation method thereof; the waveguide optical swift adopts a five-layer film structure which comprises a lower waveguide lower cladding, a lower waveguide sandwich layer, a vertical coupling layer, an upper waveguide sandwich layer and an upper waveguide upper cladding from a base silicon chip to a mental electrode; all of the lower waveguide cladding, the upper waveguide cladding and the vertical coupling layer are made of polyester polymers; an upper waveguide and a lower waveguide are made of cyclized rubber polymers; the upper waveguide and the lower waveguide are in the angle of 0.2 DEG-1.8 DEG.. The five-film structure is prepared by the painting method; the upper waveguide and the lower waveguide are made by photoetching technique. The invention has the advantages of simple manufacture technique, low manufacture cost, low driving power of the swift, rapid response speed, high light extinction ratio and low insertion loss; the waveguide optical swift in the invention can be used in a large scale integration optical waveguide return circuit as a basic unit.
Description
Technical field
The present invention relates to a kind of waveguide optical switch, particularly a kind of three-dimensional perpendicular coupled mode waveguide optical switch and preparation method thereof.
Background technology
Traditional waveguide optical switch is confined to two dimensional surface integrated morphology, and it can realize higher degree of accuracy for the micro production technology.But in the waveguide optical switch of two-dimension plane structure, electrode can not be deposited on the positive top of a waveguide, and its is also very near another waveguide, thereby electrode can have influence on two waveguides simultaneously, thereby needs higher electrode drive power.
Along with the development of three-dimensional integrated optics, the optoelectronic areas scientific worker pays close attention to the research of three-dimensional perpendicular coupled mode fiber waveguide device more and more.(Keil N, Weinert C, Wirges W, et al.Thermo-optical coupler switches usinghybrid polymer/silica integration technology[J] .Electron.Lett, 2000,36 (5): 430-431.) reported a kind of hybrid vertical coupled waveguide optical switch, it adopts four tunic structures, is followed successively by down waveguide core layer, vertical coupled layer (public covering), goes up waveguide core layer, goes up the waveguide top covering from substrate silicon chip to metal electrode.Following waveguide core layer comprises that waveguide down reaches waveguide side covering down, and last waveguide core layer comprises waveguide and goes up waveguide side covering; The material that following waveguide core layer, vertical coupled layer (public covering), last waveguide core layer, last waveguide top covering are selected for use is followed successively by silicon dioxide (SiO
2), silicon (Si), fluorinated monomer (fluoracrylate), fluorinated monomer (fluoracrylate).Following waveguide is to be positioned at the rectangle straight wave guide of waveguide side covering down, and last waveguide is the rectangle straight wave guide that is positioned at waveguide side covering, and relative angle between the two is 0.4 °.This waveguide optical switch is because following waveguide is made of silicon dioxide, and last waveguide is made up of polymkeric substance, and vertical coupled layer (public covering) is made up of silicon, thereby exist manufacture craft complicated, cost of manufacture height, switch drive power height, response speed is slow, and extinction ratio is low, inserts shortcomings such as loss is big.
Summary of the invention
The technical problem to be solved in the present invention provides that a kind of manufacture craft is simple, cost of manufacture is low, and switch drive power is low, response speed is fast, extinction ratio is high, insert little waveguide optical switch of loss and preparation method thereof.
Waveguide optical switch of the present invention adopts five tunic structures, is followed successively by down waveguide under-clad layer, following waveguide core layer, vertical coupled layer, goes up waveguide core layer, goes up the waveguide top covering from substrate silicon chip to metal electrode; Wherein descend waveguide core layer to comprise that waveguide down reaches waveguide side covering down, last waveguide core layer comprises waveguide and goes up waveguide side covering; Following waveguide under-clad layer, down waveguide side covering, vertical coupled layer, go up waveguide side covering, go up the waveguide top covering and all adopt polyester polymer BCB; Thermoprene base polymer Su8 is all adopted in last waveguide and following waveguide.
Described waveguide under-clad layer thickness down is 3～5 μ m; Following waveguide core layer thickness is 3.5～4.5 μ m; Vertical coupled layer thickness is 1～2 μ m; Last waveguide core layer thickness is 3.5～4.5 μ m; Last waveguide top covering thickness is 3～5 μ m; Angle between last waveguide and the following waveguide is 0.2 °～1.8 °.
Described waveguide optical switch method for making specifically may further comprise the steps:
A, conventional cleaning is carried out on substrate silicon chip 1 surface;
B, on the substrate surface that step a handled spin coating BCB as under waveguide under-clad layer 2; Sol evenning machine is adopted in spin coating; Spin coating 5～9s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 8～12s when the sol evenning machine rotational speed is 1000～2000 rev/mins then;
C, to obtain through step b slice, thin piece carry out post bake and handle; Post bake adopts baking oven, and baking oven is vacuumized earlier, feeds nitrogen then; Under the normal pressure condition of nitrogen gas, baking is 38～42 minutes during 205～215 ℃ of temperature, takes out slice, thin piece after being cooled to room temperature naturally;
D, at the slice, thin piece upper surface spin coating one deck Su8 that obtains through step c, and carry out preceding baking; Sol evenning machine, spin coating 5～7s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 5～7s when the sol evenning machine rotational speed is 4000～6000 rev/mins are then adopted in spin coating; Before baking adopt baking oven, in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
E, the slice, thin piece upper surface that obtains through steps d is carried out photoetching, carve down and develop behind waveguide 7 figures and dry by the fire the back; Development time is 25s～35s; Baking oven is adopted in back baking, and in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, and baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
F, at the slice, thin piece upper surface spin coating one deck BCB that obtains through step e and carry out post bake and handle; This BCB will descend waveguide 7 to encase, and following waveguide 7 constitutes waveguide core layer down with following waveguide side covering 3, and the BCB of following waveguide core layer upper surface is vertical coupled layer 4; Sol evenning machine, spin coating 5～9s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 8～12s when the sol evenning machine rotational speed is 2000～4000 rev/mins are then adopted in spin coating; Post bake adopts baking oven, and baking oven is vacuumized earlier, feeds nitrogen then; Under the normal pressure condition of nitrogen gas, baking is 38～42 minutes during 205～215 ℃ of temperature, and baking 58～62 minutes during 245～255 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
G, at the slice, thin piece upper surface spin coating one deck Su8 that obtains through step f and carry out preceding baking; Sol evenning machine, spin coating 5～7s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 5～7s when rotational speed is 4000～6000 rev/mins are then adopted in spin coating; Before baking adopt baking oven, in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
H, the slice, thin piece upper surface that obtains through step g is carried out photoetching, carve and develop behind waveguide 8 figures and dry by the fire the back; Development time is 25s～35s; Baking oven is adopted in back baking, and in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, and baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
I, at the slice, thin piece upper surface spin coating BCB that obtains through step h; Sol evenning machine, spin coating 5～9s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 8～12s when the sol evenning machine rotational speed is 1000～2000 rev/mins are then adopted in spin coating;
J, the slice, thin piece that process step I is obtained carry out the post bake processing; Post bake adopts baking oven, and baking oven is vacuumized earlier, feeds nitrogen then; Under the normal pressure condition of nitrogen gas, baking is 38～42 minutes during 205～215 ℃ of temperature, and baking 58～62 minutes during 245～255 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
K, at the slice, thin piece upper surface evaporation metal electrode of handling through step j 9, metal electrode 9 on being positioned at above waveguide 8 and following waveguide 7 infalls and its vertical and last waveguide 8 identical.
Therefore only beneficial effect: it all is polymeric material that the present invention makes the selected material of this waveguide optical switch, needs a kind of technology, i.e. polymer technology, thus having reduced technical requirement, manufacture craft is simple, and cost is low; Electrodeposition is at the top of last waveguide, and following waveguide and last waveguide are isolated by vertical coupled layer, have reduced electrode drive power, and response speed is fast, extinction ratio is high, the insertion loss is little.Waveguide optical switch of the present invention can be used as elementary cell and is applied in the extensive integrated light guide loop.
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Description of drawings
Fig. 1 is a structural representation of the present invention.1 substrate silicon chip among the figure, 2 times waveguide under-clad layers, 3 times waveguide side coverings, 4 vertical coupled layers, waveguide side covering on 5, waveguide top covering on 6,7 times waveguides, waveguide on 8,9 metal electrodes.
Embodiment
As shown in Figure 1, the present invention adopts five tunic structures, from substrate silicon chip 1 to metal electrode 9 be followed successively by down waveguide under-clad layer 2, down waveguide core layer, vertical coupled layer 4 (public covering), go up waveguide core layer, go up waveguide top covering 6.What substrate silicon chip 1 adopted is the high-purity silicon chip.Following waveguide under-clad layer 2 is selected polyester polymer BCB for use, and thickness can be 3 μ m, 4 μ m or 5 μ m.Following waveguide core layer thickness is 3.6 μ m, 3.8 μ m, 4.0 μ m or 4.2 μ m, comprise the following waveguide 7 that is positioned at this layer and following waveguide side covering 3 on every side thereof, thermoprene base polymer Su8 is adopted in following waveguide 7, and following waveguide side covering 3 adopts polyester polymer BCB.Vertical coupled layer 4 is selected polyester polymer BCB for use, and thickness is 1.2 μ m, 1.5 μ m, 1.6 μ m or 1.9 μ m.Last waveguide core layer thickness is 3.6 μ m, 3.8 μ m, 4.0 μ m or 4.2 μ m, comprise the last waveguide 8 that is positioned at this layer and last waveguide side covering 5 on every side thereof, thermoprene base polymer Su8 is adopted in last waveguide 8, and last waveguide side covering 5 adopts polyester polymer BCB.Following waveguide 7 and last waveguide 8 are the rectangle straight wave guide, are isolated by vertical coupled layer 4 between last waveguide 8 and the following waveguide 7, and angle between the two is 0.2 °, 0.7 °, 1.5 ° or 1.8 °.Last waveguide top covering 6 is selected polyester polymer BCB for use, and thickness is 3 μ m, 4 μ m or 5 μ m.Metal electrode 9 is positioned at waveguide top covering 6 lip-deep waveguide 8 and following waveguide 7 infalls gone up, and it is vertically identical with last waveguide 8.
The course of work of the present invention: as shown in Figure 2, when metal electrode 9 does not apply electric current, from the light signal of port 77 (or port 88) input after waveguide 7 down (or going up waveguide 8) transmission by port 77 ' or (port 88 ') export.Do not have the coupling of light wave on this moment between waveguide 8 and the following waveguide 7, this transmission mode of light wave is called closed condition.When applying electric current for metal electrode 9, last waveguide 8, following waveguide 7 and vertical coupled layer 4 are heated, temperature rises, thermo-optic effect causes that waveguide index changes, can be coupled into waveguide 8 (or following waveguide 7) through waveguide 7 down (or going up waveguide 8) and vertical coupled layer 4 from the part optical signals of port 77 (or port 88) input, export by port 88 ' (or port 77 ') then.This transmission mode of light wave is called opening (cross state) state.
Described step b, spin coating 7s when spin coating condition the best is 500 rev/mins of sol evenning machine rotational speeies, spin coating 10s when the sol evenning machine rotational speed is 1000 rev/mins then.
Described step c, in the post bake condition, baking was 40 minutes when the temperature and time condition can be selected 210 ℃ of temperature.
Spin coating 7s when described steps d, spin coating condition the best are 500 rev/mins of sol evenning machine rotational speeies, spin coating 7s when the sol evenning machine rotational speed is 4000 rev/mins then; Before baking condition the best be in the darkroom under the condition of normal pressure, dried by the fire 10 minutes during 65 ℃ of temperature, dried by the fire 10 minutes during 95 ℃ of temperature then;
Described step e, development time the best is 30s; Back baking condition the best is in the darkroom under the condition of normal pressure, and baking is 10 minutes during 65 ℃ of temperature, baking 10 minutes during 95 ℃ of temperature then.
Described step f, spin coating 7s when spin coating condition the best is 500 rev/mins of sol evenning machine rotational speeies, spin coating 10s when the sol evenning machine rotational speed is 3000 rev/mins then; In the post bake condition, baking was 40 minutes when the temperature and time condition can be selected 210 ℃ of temperature, baking 60 minutes during 250 ℃ of temperature then;
Spin coating 7s when described step g, spin coating condition the best are 500 rev/mins of sol evenning machine rotational speeies, spin coating 7s when rotational speed is 4000 rev/mins then; Before baking condition the best be in the darkroom under the condition of normal pressure, dried by the fire 10 minutes during 65 ℃ of temperature, dried by the fire 10 minutes during 95 ℃ of temperature then.
Described step h, development time the best is 30s; Back baking condition the best is in the darkroom under the condition of normal pressure, and baking is 10 minutes during 65 ℃ of temperature, baking 10 minutes during 95 ℃ of temperature then.
Spin coating 7s when described step I, spin coating condition the best are 500 rev/mins of sol evenning machine rotational speeies, spin coating 10s when the sol evenning machine rotational speed is 1000 rev/mins then.
Described step j, in the post bake condition, baking was 40 minutes when the temperature and time condition can be selected 210 ℃ of temperature, baking 60 minutes during 250 ℃ of temperature then.
Because Su8 itself can be used as the core layer polymer material, can be used as photoresist again.So just save complicated technological process such as RIE and evaporation of aluminum mask, simplified the device preparation flow.
The present invention is not limited to above-mentioned embodiment, the person of ordinary skill in the field according to above-mentioned embodiment be easy to associate down the waveguide under-clad layer, down waveguide side covering, vertical coupled layer, go up waveguide side covering and go up the waveguide top covering and can also select other polyester polymers such as EPOXY, PMMA, ZP49 for use; Following waveguide and last waveguide can also be adopted polyester polymers such as BCB, ZP51, PMMA.
Claims (3)
1, a kind of waveguide optical switch comprises down waveguide core layer, vertical coupled layer, goes up waveguide core layer, goes up the waveguide top covering, and following waveguide under-clad layer wherein descend waveguide core layer to comprise waveguide down and waveguide side covering down, and last waveguide core layer comprises that waveguide reaches upward waveguide side covering; It is characterized in that down waveguide under-clad layer (2), down waveguide side covering (3), vertical coupled layer (4), go up waveguide side covering (5), go up waveguide top covering (6) and all adopt polyester polymer BCB; Thermoprene base polymer Su8 is all adopted in last waveguide (8) and following waveguide (7); Following waveguide under-clad layer (2) thickness is 3～5 μ m; Following waveguide core layer thickness is 3.5～4.5 μ m; Vertical coupled layer (4) thickness is 1～2 μ m; Last waveguide core layer thickness is 3.5～4.5 μ m; Last waveguide top covering (6) thickness is 3～5 μ m; Angle between last waveguide (8) and the following waveguide (7) is 0.2 °～1.8 °.
2, waveguide optical switch according to claim 1 is characterized in that waveguide under-clad layer (2) thickness is 4 μ m down; Following waveguide core layer thickness is 3.8 μ m; Vertical coupled layer (4) thickness is 1.5 μ m; Last waveguide core layer thickness is 3.8 μ m; Angle between following waveguide (7) and the last waveguide (8) is 0.7 °; Last waveguide top covering (6) thickness is 4 μ m.
3, the method for making of the described waveguide optical switch of a kind of claim 1 is characterized in that comprising the following steps:
A, conventional cleaning is carried out on substrate silicon chip 1 surface;
B, on the substrate surface that step a handled spin coating BCB as under waveguide under-clad layer (2); Sol evenning machine is adopted in spin coating; Spin coating 5～9s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 8～12s when the sol evenning machine rotational speed is 1000～2000 rev/mins then;
C, the slice, thin piece that process step b is obtained carry out the post bake processing; Post bake adopts baking oven, and baking oven is vacuumized earlier, feeds nitrogen then; Under the normal pressure condition of nitrogen gas, baking is 38～42 minutes during 205～215 ℃ of temperature, takes out slice, thin piece after being cooled to room temperature naturally;
D, at the slice, thin piece upper surface spin coating one deck Su8 that obtains through step c, and carry out preceding baking; Sol evenning machine, spin coating 5～7s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 5～7s when the sol evenning machine rotational speed is 4000～6000 rev/mins are then adopted in spin coating; Before baking adopt baking oven, in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
E, the slice, thin piece upper surface that obtains through steps d is carried out photoetching, carve down and develop behind waveguide (7) figure and dry by the fire the back; Development time is 25s～35s; Baking oven is adopted in back baking, and in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, and baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
F, at the slice, thin piece upper surface spin coating one deck BCB that obtains through step e and carry out post bake and handle; Sol evenning machine, spin coating 5～9s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 8～12s when the sol evenning machine rotational speed is 2000～4000 rev/mins are then adopted in spin coating; Post bake adopts baking oven, and baking oven is vacuumized earlier, feeds nitrogen then; Under the normal pressure condition of nitrogen gas, baking is 38～42 minutes during 205～215 ℃ of temperature, and baking 58～62 minutes during 245～255 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
G, at the slice, thin piece upper surface spin coating one deck Su8 that obtains through step f and carry out preceding baking; Sol evenning machine, spin coating 5～7s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 5～7s when rotational speed is 4000～6000 rev/mins are then adopted in spin coating; Before baking adopt baking oven, in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
H, the slice, thin piece upper surface that obtains through step g is carried out photoetching, carve and develop behind waveguide (8) figure and dry by the fire the back; Development time is 25s～35s; Baking oven is adopted in back baking, and in the darkroom under the condition of normal pressure, baking is 8～12 minutes during 65～70 ℃ of temperature, and baking 8～12 minutes during 95～100 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
I, at the slice, thin piece upper surface spin coating BCB that obtains through step h; Sol evenning machine, spin coating 5～9s when the sol evenning machine rotational speed is 500～700 rev/mins, spin coating 8～12s when the sol evenning machine rotational speed is 1000～2000 rev/mins are then adopted in spin coating;
J, the slice, thin piece that the process step I is obtained carry out the post bake processing; Post bake adopts baking oven, and baking oven is vacuumized earlier, feeds nitrogen then; Under the normal pressure condition of nitrogen gas, baking is 38～42 minutes during 205～215 ℃ of temperature, and baking 58～62 minutes during 245～255 ℃ of temperature is then taken out slice, thin piece after being cooled to room temperature naturally;
K, at the slice, thin piece upper surface evaporation metal electrode of handling through step j (9).
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| CN104459886B (en) * | 2014-12-31 | 2017-03-08 | 吉林大学 | A kind of method that polymer P MMA fiber waveguide device is prepared using electric printing technology |
| CN105572795B (en) * | 2015-12-23 | 2018-08-21 | 吉林大学 | A kind of polymer rectangular optical waveguide and micro-fluidic three-dimensionally integrated chip and preparation method thereof |
| CN107621674A (en) * | 2017-10-17 | 2018-01-23 | 中北大学 | A kind of flexible optical waveguides of SU 8 applied to accelerometer and preparation method thereof |
| CN108761637B (en) * | 2018-06-12 | 2024-01-23 | 南京邮电大学 | Three-dimensional multilayer waveguide mode multiplexing and demultiplexing device and preparation method thereof |
| SG10201809247QA (en) * | 2018-10-19 | 2020-05-28 | Advanced Micro Foundry Pte Ltd | Optical waveguide tuning element |
| CN111007592A (en) * | 2019-11-22 | 2020-04-14 | 河南仕佳光子科技股份有限公司 | 3dB directional coupler capable of shortening coupling length and manufacturing method thereof |
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| US5854866A (en) * | 1995-03-14 | 1998-12-29 | Texas Instruments Incorporated | Multi-level architecture for optical time delays in integrated circuits |
| US6385376B1 (en) * | 1998-10-30 | 2002-05-07 | The Regents Of The University Of California | Fused vertical coupler for switches, filters and other electro-optic devices |
| US6593212B1 (en) * | 2001-10-29 | 2003-07-15 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electro-optical devices using a hydrogenion splitting technique |
| CN1135426C (en) * | 1999-03-31 | 2004-01-21 | 布里斯托尔大学 | Optical crosspoint switch using vertical coupled waveguide structure |
| US7065266B2 (en) * | 2002-03-08 | 2006-06-20 | Infinera Corporation | Benzocyclobutene polymer (BCB) as a passivation layer for optical passive elements |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854866A (en) * | 1995-03-14 | 1998-12-29 | Texas Instruments Incorporated | Multi-level architecture for optical time delays in integrated circuits |
| US6385376B1 (en) * | 1998-10-30 | 2002-05-07 | The Regents Of The University Of California | Fused vertical coupler for switches, filters and other electro-optic devices |
| CN1135426C (en) * | 1999-03-31 | 2004-01-21 | 布里斯托尔大学 | Optical crosspoint switch using vertical coupled waveguide structure |
| US6593212B1 (en) * | 2001-10-29 | 2003-07-15 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electro-optical devices using a hydrogenion splitting technique |
| US7065266B2 (en) * | 2002-03-08 | 2006-06-20 | Infinera Corporation | Benzocyclobutene polymer (BCB) as a passivation layer for optical passive elements |
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