CN100459200C - Optical diode package structure - Google Patents
Optical diode package structure Download PDFInfo
- Publication number
- CN100459200C CN100459200C CNB2007101469793A CN200710146979A CN100459200C CN 100459200 C CN100459200 C CN 100459200C CN B2007101469793 A CNB2007101469793 A CN B2007101469793A CN 200710146979 A CN200710146979 A CN 200710146979A CN 100459200 C CN100459200 C CN 100459200C
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- Prior art keywords
- optical diode
- package structure
- heat
- conductive layer
- diode package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
An optical diode packaging structure mainly comprises: an optical diode grain for emitting light; a radiating substrate for spilling out the heat generated by the said optical diode grain; a first conducting layer formed on the said radiating substrate; a first insulating layer for covering the said first conducting layer; a packaging base below the first insulating layer and for supporting the optical diode grain by supporting space and a conducting structure going through the first insulating layer and the said packaging base and respectively electrically connected with the said optical diode grain and the first conducting layer by the first end of the conducting structure and the second end of the conducting structure.
Description
Technical field
The present invention relates to a kind of optical diode package structure, relate in particular to a kind of optical diode package structure that only has a kind of heat dissipation path.
Background technology
See also Fig. 1 (a) and (b), this Fig. 1 (a) is the generalized section of known package structure for LED 10 (diagram does not mark), and this Fig. 1 (b) is the schematic top plan view of this known package structure for LED 10.Wherein this LED crystal particle 101 is loaded on the pedestal 102, and this pedestal 102 utilizes a scolder 12 to carry out both joint with a heating column 103, and this heating column 103 also is connected with a heat-conducting layer 105 (being generally aluminium material or copper material).This known package structure for LED 10 conduction rack 107 of also including a plurality of conductive junction points 106 and being connected to a conductive layer 104 wherein, required electric power when providing this LED crystal particle 101 luminous by lead 109.In addition, because this conductive layer 104 is metal material with this heat-conducting layer 105, can provide an insulating barrier 108 between the two,, finish the encapsulation of this known package structure for LED 10 at last with a sealing 110 and lens 111 to avoid producing situation of short circuit because of directly contacting between the two.
Because when this LED crystal particle 101 is luminous, can produce a large amount of heat energy, therefore this package structure for LED 10 just has necessary heat dissipation path, so as not to this LED crystal particle 101 cause because of temperature is too high arround the damage of assembly reduce useful life.In above-mentioned known package structure for LED 10, just have following two kinds of heat dissipation path.First heat dissipation path is to utilize this heating column 103 when this LED crystal particle 101 is luminous thermal energy conduction to heat-conducting layer 105 to be shed.Second heat dissipation path then is when described conductive junction point 106 and conduction rack 107 supply of current, simultaneously heat energy being seen through described conductive junction point 106 sheds (because described conductive junction point 106, conduction rack 107 and this conductive layer 104 are all metal material from this conductive layer 104 with conduction rack 107, so still can conduct a little heat energy, and it is shed).
But in above-mentioned this first heat dissipation path, owing to engage by scolder 12 between this pedestal 102 and this heating column 103, and when weld job, then may be because of the careless mistake of operation, cause air to infiltrate and the some bubbles of generation in scolder 12, make heat conduction incomplete, cause the phenomenon of this known package structure for LED minimizing in 10 useful lifes.Just must be dependent on this other second heat dissipation path this moment, but in this second heat dissipation path, because of the cross-sectional area of this conduction rack little, thermal resistance is relatively large, heat-transfer capability is limited, if cause the phenomenon of loose contact between described conductive junction point 106 and the conduction rack 107 because of the careless mistake of routing operation, also can influence the efficient that this LED crystal particle 101 is dispelled the heat, and cause the problem of this LED crystal particle encapsulating structure minimizing in 10 useful lifes.
Because this LED crystal particle encapsulating structure 10 must be that it is at weld job or routing operation under the situation without any careless mistake, just can guarantee smoothly and efficiently heat energy to be shed, so be based upon the light-emitting diode product under above-mentioned this package structure for LED 10, if heat radiation not exclusively, we just can't learn in the very first time definitely.For example, when after this product manufacturing is finished, carrying out the QC detection, find that the phenomenon of loose contact (as luminance shortage) appears in a product, just we can know that this product is in the routing operation careless mistake to be arranged, its second heat dissipation path can't effectively be dispelled the heat, and belongs to faulty materials.But, if on weld job careless mistake and when causing its first heat dissipation path to dispel the heat effectively to some extent, just can't when detecting, QC find immediately, because even if this product does not have careless mistake and when can be smooth luminous in the routing operation, can not guarantee when welding, not take place the careless mistake in the operation.
To sum up institute is old, because above-mentioned LED crystal particle encapsulating structure 10 has above-mentioned two kinds of heat radiation approach, when after a light-emitting diode product is finished, accepting the QC detection, just can't in the very first time, find the flaw of this product, so, how can design the light emitting diode construction that a kind of heat dissipation path is only arranged, and can grasp its product reliability in the very first time, and then improve the shortcoming of this known LED crystal particle encapsulating structure 10, be the topmost purpose of the present invention.
Summary of the invention
Purpose of the present invention is at the defective of above-mentioned prior art, to provide a kind of a kind of heat dissipation path that only has, and can grasp the optical diode package structure of product reliability in the very first time.
The present invention is a kind of optical diode package structure, consists predominantly of: an optical diode grain, in order to send a light; One heat-radiating substrate is in order to shed the heat energy that this optical diode grain produced; One first conductive layer is formed on this heat-radiating substrate; One first insulating barrier is covered on this first conductive layer; One encapsulation base is arranged at the top of this first insulating barrier, and this encapsulation base carries this optical diode grain with a bearing space; And a conductive structure, it runs through this first insulating barrier and this encapsulation base, is electrically connected to this optical diode grain and this first conductive layer respectively and bring in second of first end of a described conductive structure and a described conductive structure.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this optical diode grain can be a LED crystal particle.
According to above-mentioned conception, optical diode package structure of the present invention, also comprised a conductive bonding material, it is coated on the end face of the bottom surface of this encapsulation base and this first conductive layer, make this encapsulation base can be fixed on this first conductive layer, this conductive bonding material can be elargol or scolding tin.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this heat-radiating substrate is a rectangular configuration, and this heat-radiating substrate comprises: a heat-conducting layer, it is made with an aluminium material, in order to the heat energy that this optical diode produced is shed; And one second insulating barrier, it is made and be formed on this heat-conducting layer with a polymerizable material, in order to this first conductive layer and this heat-conducting layer of insulating.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this encapsulation base is with the made encapsulation base of a silicon material.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this first conductive layer can a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, a Ti/Au/Ni/Au alloy, an AlCu/Ni/Au or an AuSn alloy be made.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this first conductive layer includes an anodal portion and a negative pole portion, and should positive pole portion and this negative pole portion partly expose this first insulating barrier.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this first insulating barrier be covered on first conductive layer and be formed at this positive pole portion and this negative pole portion between, in order to this positive pole portion and this negative pole portion of insulating.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this conductive structure is finished with a through-hole structure, the sidewall of this through-hole structure is formed with one second conductive layer, and this first end of this conductive structure is positioned at the bottom of this bearing space, and this second end is positioned on the surface of this first conductive layer.
According to above-mentioned conception, optical diode package structure of the present invention, wherein this optical diode grain is finished electric connection with mode and this conductive structure of a routing or a flip-chip.
Compared with prior art, beneficial effect of the present invention is, this package structure for LED only provides a kind of light emitting diode construction of heat dissipation path, improves known package structure for LED heat radiation problem of unstable, and can grasp its product reliability in the very first time.
Description of drawings
By following diagram and explanation, understanding the present invention that will be more deep:
Fig. 1 (a) is the generalized section of known package structure for LED.
Fig. 1 (b) is the schematic top plan view of known package structure for LED.
Fig. 2 (a) is the generalized section of the preferred embodiment of optical diode package structure of the present invention.
Fig. 2 (b) is the schematic top plan view of the preferred embodiment of optical diode package structure of the present invention.
Fig. 3 is for carrying out a plurality of these optical diode package structures of the present invention in the schematic diagram of applied in any combination.
The generalized section of another embodiment of the optical diode package structure that Fig. 4 (a) is worked out for the known shortcoming of improvement for the present invention,
The schematic top plan view of another embodiment of the optical diode package structure that Fig. 4 (b) is worked out for the known shortcoming of improvement for the present invention.
Wherein, description of reference numerals is as follows:
Known package structure for LED 10 LED crystal particle 101
Optical diode package structure 20 optical diode grain 201
Heat-radiating substrate 202 heat-conducting layers 2021
Second insulating barrier, 2,022 first conductive layers 203
2031 negative pole portions 2032 of positive pole portion
First insulating barrier, 204 encapsulation bases 205
Second end, 2,062 second conductive layers 2063
Optical diode package structure 30 optical diode grain 301
Heat-radiating substrate 302 heat-conducting layers 3021
Second insulating barrier, 3,022 first conductive layers 303
3031 negative pole portions 3032 of positive pole portion
First insulating barrier, 304 encapsulation bases 305
Second end, 3,062 second conductive layers 3063
Conductive bonding material A
Embodiment
See also Fig. 2 (a) and (b), the generalized section of the preferred embodiment of the optical diode package structure 20 that worked out for the known shortcoming of improvement for the present invention of Fig. 2 (a) wherein, and the schematic top plan view of first embodiment of the optical diode package structure 20 that Fig. 2 (b) is worked out for the known shortcoming of improvement for the present invention.Shown in Fig. 2 (a), this optical diode package structure 20 consists predominantly of an optical diode grain 201, one heat-radiating substrate 202, one first conductive layer 203, one first insulating barrier 204, one encapsulation base 205 and a conductive structure 206, wherein this encapsulation base 205 is with the made encapsulation base of silicon material, it is arranged on this first insulating barrier 204, and has a bearing space 2051, in order to carry this optical diode grain 201, and this optical diode grain 201 is a LED crystal particle (Light EmittingDiode, be called for short LED), this first insulating barrier 204 is covered on this first conductive layer 203, and be formed between the anodal portion 2031 and a negative pole portion 2032 that this first conductive layer 203 had, in order to this positive pole portion 2031 and this negative pole portion 2032 of insulating, in addition, this first conductive layer 203 can a TiW/Cu/Ni/Au alloy, one Ti/Cu/Ni/Au alloy, one Ti/Au/Ni/Au, one AlCu/Ni/Au or an AuSn alloy are made, and be formed on this heat-radiating substrate 202, and should positive pole portion 2031 partly expose this first insulating barrier 204 separately with this negative pole portion 2032.This conductive structure 206 has one first end 2061 and one second end 2062, run through this first insulating barrier 204, this first end 2061 is positioned at the bottom of this bearing space 2051,2062 at this second end is positioned on the surface of this first conductive layer 203, make that this optical diode grain 201 can a flip-chip or be connected with this first end 2061 in the mode of a routing (for example utilizing the lead 207 in the diagram), and then make this optical diode grain 201 and this first conductive layer 203 finish electric connection.In addition, we also can be at the bottom surface of this encapsulation base 205 and the good conductive bonding material A of end face coating thermal conductivity of this first conductive layer 206, make this encapsulation base 205 can more stably be fixed on this first conductive layer 203, and this conductive bonding material A is coated on the area of these encapsulation base 205 bottom surfaces and is greater than the cross-sectional area of conductive structure 206 at the area of these first conductive layer, 203 end faces usually, and the contact area that so can increase by 203 of this encapsulation base 205 and this first conductive layers is to reduce contact heat resistance.Below be described further with regard to technical characterictic of the present invention again.
From the above, wherein this heat-radiating substrate 202 includes a heat-conducting layer 2021 and one second insulating barrier 2022, this heat-conducting layer 2021 can a thermal conductivity good metal material (for example: aluminium, copper) made, and in order to the heat energy of these optical diode grain 201 generations is derived, and this second insulating barrier 2022 is made with the polymerizable material (Polymer) with good heat conductive ability, and be similarly this first conductive layer 2031 and this heat-conducting layer 2021 of metal material in order to insulation, on the other hand, wherein this conductive structure 206 is a through-hole structure, the sidewall of this through-hole structure then is formed with one second conductive layer 2063, in order to allow this optical diode grain 201 finish electric connection with this first conductive layer 203.And above-mentioned part is exposed this first conductive layer 203 of this first insulating barrier 204 and can be formed and can utilize a routing mode (lead 208 as shown in FIG.) to finish with a circuit board (not shown at this) conductive junction point of electric connection, thus, we can know and find out from figure, the heat dissipation path of this optical diode package structure 20 of the present invention and conductive path are same path, conduction compared to this package structure for LED of the prior art is two kinds of different heat dissipation path with heat conduction, the present invention can utilize the design of this conductive structure 206, finish the purpose of conduction heat conduction simultaneously, and then reach the known package structure for LED heat radiation of improvement problem of unstable.
We can clearly know via above-mentioned explanation, the topmost technical characterictic of the present invention promptly is the design by this conductive structure 206 in this optical diode package structure 20 of the present invention, make this optical diode grain 201 behind electrified light emitting, simultaneously thermal energy conduction is led to this heat-radiating substrate 202 and shed, finish the effect of conduction heat conduction simultaneously, thus, just two kinds of different heat dissipation path in the known package structure for LED 201 in the prior art can be integrated into a kind of heat dissipation path, and then improve this known package structure for LED unsettled situation of dispelling the heat, on the other hand, when the product that is applied to optical diode ray structure 20 of the present invention being carried out the QC detection, if when finding that this optical diode grain 201 has the phenomenon of luminance shortage when emitting beam, flaw takes place in this conductive structure 206 of promptly knowing this optical diode package structure 20 in manufacture process, cause conducting electricity not exclusively, compared to this known optical diode package structure 201 of the prior art, more can in the very first time, find the flaw of product, and then improve this known optical diode package structure 10 can't accurately be grasped product reliability because having two kinds of heat dissipation path problem.
See also Fig. 3, it is for to carry out the applied in any combination schematic diagram with a plurality of these optical diode package structures 20 of the present invention.In the prior art, because this known package structure for LED has two kinds of heat dissipation path, and as described in the prior art, the radiating efficiency of this second heat dissipation path is unsatisfactory, therefore it is radial that heat abstractor that must this known package structure for LED is designed to very easily dispel the heat, but because optical diode is widely used in car light now, on traffic lights or the various indicator light, when so design just can cause a plurality of optical diode applied in any combination, generation is the phenomenon of driving fit mutually, and then caused the waste in space, because as mentioned above, optical diode package structure 20 of the present invention will this known package structure for LED 10 two kinds of heat dissipation path be integrated into one, this second heat dissipation path unfavorable phenomenon of dispelling the heat just can not take place, thus, radial design just becomes inessential, so, this heat-radiating substrate 202 of this optical diode package structure 20 in Fig. 2 just can be designed to the structure of rectangle, because having, rectangle interconnects the characteristic that Shi Buhui produces the dead angle, therefore this optical diode package structure 20 of the present invention just can utilize this characteristic, finish combination and do not produce the effect that the space is wasted and can under the situation that does not produce the area waste, reach a plurality of optical diode package structures 20, and a plurality of optical diode package structures 20 are after combination is finished, as shown in Figure 3.
See also Fig. 4 (a) and (b), wherein Fig. 4 (a) is a generalized section of improving optical diode package structure 30 another embodiment that known disadvantage works out for the present invention, and Fig. 4 (b) is the schematic top plan view of improving optical diode package structure 30 another embodiment that known disadvantage works out for the present invention.As Fig. 4 (a) (b) shown in, we can find out clearly that this optical diode structure 30 is for to be installed on the same heat-radiating substrate 302 as the above-mentioned encapsulation base that carries optical diode grain 301 305 a plurality of in the present embodiment, thus, with a plurality of optical diode package structures 30 in addition during applied in any combination, just need after finishing individually, do not made up again, finish and can when this optical diode package structure encapsulates, produce once, therefore, also can be reduced in complexity on the manufacture craft in the installing mode of present embodiment.And in the present embodiment, the remainder technological means is all same as the previously described embodiments, so do not repeat them here it.
We can clearly know comprehensive above-mentioned explanation; the topmost technical characterictic of the present invention is that promptly this conductive structure 206 can be when this optical diode grain electrified light emitting; thermal energy conduction to this heat-radiating substrate 202 that it produced is shed; reach the main purpose of heat conduction simultaneously to finish conduction; thus; just two kinds of heat dissipation path in this known package structure for LED 10 in the prior art can be integrated into a kind of heat dissipation path; and then the unsettled situation of these known package structure for LED 10 heat radiations of improvement; in addition; because the structure that this heat-radiating substrate 202 of the present invention is rectangle design; just can be with a plurality of optical diode package structure combinations under the condition that does not produce the area waste; and then be applied on the various light-emitting diode products; on the other hand; the present invention more can install a plurality of encapsulation bases that carry optical diode grain simultaneously on same heat-radiating substrate; to reduce the complexity of making step; the problem that notion of the present invention is successfully improved in the prior art to be produced; but the above only is the preferred embodiments of the present invention; do not limit to the scope of the present invention; the present invention can carry out multiple modification according to the technological know-how of its grasp by those skilled in the art, the scope that right neither disengaging claim is protected.
Claims (10)
1. optical diode package structure consists predominantly of:
One optical diode grain is in order to emit beam;
One heat-radiating substrate, it is in order to shed the heat energy that this optical diode grain produced;
One first conductive layer, it is formed on this heat-radiating substrate;
One first insulating barrier, it is covered on this first conductive layer;
One encapsulation base, it is arranged at the top of this first insulating barrier, and this encapsulation base carries this optical diode grain with a bearing space; And
One conductive structure, it runs through this first insulating barrier and this encapsulation base, is electrically connected to this optical diode grain and this first conductive layer respectively and bring in one second of one first end of described conductive structure and described conductive structure.
2. optical diode package structure as claimed in claim 1, wherein this optical diode grain can be a LED crystal particle.
3. optical diode package structure as claimed in claim 1 has also comprised a conductive bonding material, and it is coated on the end face of the bottom surface of this encapsulation base and this first conductive layer, makes this encapsulation base can be fixed on this first conductive layer.
4. optical diode package structure as claimed in claim 1, wherein this heat-radiating substrate is a rectangular configuration, and this heat-radiating substrate comprises:
One heat-conducting layer, it is made with an aluminium material, in order to the heat energy that this optical diode produced is shed; And
One second insulating barrier, it is made and be formed on this heat-conducting layer with a polymerizable material, in order to this first conductive layer and this heat-conducting layer of insulating.
5. optical diode package structure as claimed in claim 1, wherein this encapsulation base is with the made encapsulation base of silicon material.
6. optical diode package structure as claimed in claim 1, wherein this first conductive layer is made with a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, a Ti/Au/Ni/Au alloy, an AlCu/Ni/Au alloy or an AuSn alloy.
7. optical diode package structure as claimed in claim 1, wherein this first conductive layer includes an anodal portion and a negative pole portion, and should positive pole portion and this negative pole portion partly expose this first insulating barrier.
8. optical diode package structure as claimed in claim 7, wherein this first insulating barrier be covered on first conductive layer and be formed at this positive pole portion and this negative pole portion between, in order to this positive pole portion and this negative pole portion of insulating.
9. optical diode package structure as claimed in claim 1, wherein this conductive structure is formed with a through-hole structure, the sidewall of this through-hole structure is formed with one second conductive layer, and this first end of this conductive structure is positioned at the bottom of this bearing space, and this second end is positioned on the surface of this first conductive layer.
10. optical diode package structure as claimed in claim 1, wherein this optical diode grain is finished electric connection with mode and this conductive structure of a routing or a flip-chip.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88715807P | 2007-01-30 | 2007-01-30 | |
| US60/887,158 | 2007-01-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101118944A CN101118944A (en) | 2008-02-06 |
| CN100459200C true CN100459200C (en) | 2009-02-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101469793A Expired - Fee Related CN100459200C (en) | 2007-01-30 | 2007-09-03 | Optical diode package structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100459200C (en) |
| TW (1) | TWI354383B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456814A (en) * | 2010-10-27 | 2012-05-16 | 上海卓凯电子科技有限公司 | System circuit carrying board for light-emitting diode module |
| TWI673477B (en) * | 2018-06-26 | 2019-10-01 | 晶翔機電股份有限公司 | Surface slope identification device and identifying method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480389B1 (en) * | 2002-01-04 | 2002-11-12 | Opto Tech Corporation | Heat dissipation structure for solid-state light emitting device package |
| CN1816918A (en) * | 2003-06-30 | 2006-08-09 | 皇家飞利浦电子股份有限公司 | Light-emitting diode thermal management system |
| CN1851945A (en) * | 2006-04-27 | 2006-10-25 | 矽畿科技股份有限公司 | Packing substrate structure of optical diode and preparing method |
-
2007
- 2007-07-20 TW TW096126702A patent/TWI354383B/en active
- 2007-09-03 CN CNB2007101469793A patent/CN100459200C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480389B1 (en) * | 2002-01-04 | 2002-11-12 | Opto Tech Corporation | Heat dissipation structure for solid-state light emitting device package |
| CN1816918A (en) * | 2003-06-30 | 2006-08-09 | 皇家飞利浦电子股份有限公司 | Light-emitting diode thermal management system |
| CN1851945A (en) * | 2006-04-27 | 2006-10-25 | 矽畿科技股份有限公司 | Packing substrate structure of optical diode and preparing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI354383B (en) | 2011-12-11 |
| TW200832754A (en) | 2008-08-01 |
| CN101118944A (en) | 2008-02-06 |
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Granted publication date: 20090204 Termination date: 20180903 |