CN100465792C - Laser drawing device, method thereof and method for preparing optical mask - Google Patents
Laser drawing device, method thereof and method for preparing optical mask Download PDFInfo
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- CN100465792C CN100465792C CNB2005100637720A CN200510063772A CN100465792C CN 100465792 C CN100465792 C CN 100465792C CN B2005100637720 A CNB2005100637720 A CN B2005100637720A CN 200510063772 A CN200510063772 A CN 200510063772A CN 100465792 C CN100465792 C CN 100465792C
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- light bundle
- film thickness
- exposure light
- exposure
- determining film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
This inveniton provides a laser drawing apparatus in which the productivity is not decreased even for a large exposure object having a resist film (photosensitive resin film) formed on the surface such as a large photomask, the optimum exposure light quantity is set even when the thickness of a resist film is varied in a minute area and favorable drawing is performed without being affected by changes in the film thickness even for a drawing pattern including a fine pattern. The laser drawing apparatus is equipped with: a drawing head to irradiate an exposure object with an exposure beam; a scanning means to move the irradiation position of the exposure beam on the exposure object; a film thickness measuring means to measure the thickness of a resist film based on the reflected beam of the exposure beam by the exposure object; and a modulation means to modulate the intensity of the exposure beam based on a predetermined drawing pattern and the measurement result obtained by the film thickness measuring means.
Description
Technical field
The present invention relates to a kind of manufacture method of laser drawing device, laser drawing method and photomask of the drawing pattern of exposure object thing irradiation exposure light bundle being drawn regulation, this exposure object thing be semiconductor wafer, liquid crystal indicator (LCD) with or the substrate used of photomask, CD be formed with the exposure object thing of etchant resist (photosensitive resin film) at surface element with substrate etc.
Background technology
Patent documentation 1: special table 2003-500847 communique
In the past, proposed to be used for to semiconductor wafer, liquid crystal indicator (LCD) with or the substrate used of photomask, CD be formed with the exposure object thing of etchant resist (photosensitive resin film) with substrate etc. at surface element, draw the laser drawing device of the drawing pattern of regulation.
And, in patent documentation 1, disclosed on the substrate of large-scale photomask etc., when using the laser drawing device to draw the drawing pattern of regulation, collect the information that is used for predicting in the issuable distortion of drawing pattern in advance, according to this information on the basis of predicted distortion, generation is used to reduce the correction corresponding diagram of this distortion, carries out the laser drawing device of Patten drawing according to this correction corresponding diagram.
In this laser drawing device, the deviation of collecting etchant resist thickness is as the information that is used for predicting drawing pattern generation distortion.The mensuration of etchant resist thickness deviation is undertaken by using contact determining film thickness machine.By on a plurality of positions of this sample substrate, carrying out the determining film thickness of etchant resist, the information of collecting the thickness deviation of etchant resist to sample substrate coating etchant resist and by contact determining film thickness machine.
At this, when the thickness deviation of etchant resist surpasses particular range, adjust etchant resist coater (etchant resist applying device), change the coating condition, again to sample substrate coating etchant resist, so that the deviation of thickness is in particular range.
And, as proofreading and correct corresponding diagram,, proofread and correct the live width in the drawing pattern for information according to drawing pattern etchant resist thickness deviation everywhere, generate decision drawing pattern exposure (exposure dose: De-ズ amount, the correction corresponding diagram of correcting value Dose) everywhere.
For the substrate that in fact exposes, utilize the condition coating etchant resist identical with sample substrate, according to proofreading and correct corresponding diagram, correction exposure amount (exposure dose) is carried out the corresponding exposure of drawing pattern with regulation simultaneously.
In addition, as above-mentioned laser drawing device in, except the substrate that in fact exposes, also must on sample substrate, apply etchant resist and measure the thickness of etchant resist, like this, just correspondingly reduced throughput rate.Particularly for being 300mm or the large-scale photomask more than the 300mm at least on one side in the square substrate, the mensuration of the whole face of this photomask being carried out the etchant resist thickness reduces throughput rate significantly.
But,, just reduced the correction accuracy of exposure if only several positions in the sample substrate are carried out the determining film thickness of etchant resist.In this case, change can't be set only exposure for the thickness of the etchant resist in the tiny area, for the drawing pattern that contains fine pattern, is subjected to the influence of Thickness Variation of etchant resist and deterioration.
Summary of the invention
Therefore, the present invention is the invention that proposes in view of above-mentioned actual conditions, even it is under the situation of such large-scale thing such as large-scale photomask that purpose is to provide a kind of exposure object thing that has formed etchant resist (photosensitive resin film) at surface element, do not reduce throughput rate yet, even and for the thickness of the etchant resist in the tiny area change also can be set optimal exposure, also can not be subjected to for the drawing pattern that contains fine pattern etchant resist Thickness Variation influence and carry out the laser drawing device of good drawing Patten drawing, the manufacture method of laser drawing method and photomask.
In order to address the above problem, the laser drawing device that the present invention relates to possesses following structure.
(structure 1)
The laser drawing device that the present invention relates to is characterized in that possessing: to the plotting head of the exposure object thing irradiation exposure light bundle that has formed etchant resist at surface element; The scanning element that the irradiation position of the exposure light bundle on the exposure object thing is moved; The modulating unit of the intensity of modulation exposure light bundle; With according to the determining film thickness unit of measuring the etchant resist thickness from the folded light beam of the exposure light bundle of exposure object thing, modulating unit is according to the measurement result of predefined drawing pattern and determining film thickness unit, the intensity of modulation exposure light bundle.
(structure 2)
The laser drawing device that the present invention relates to is characterized in that possessing: to the plotting head of the exposure object thing irradiation exposure light bundle that has formed etchant resist at surface element; To the optical head of exposure object thing irradiation determining film thickness with light beam; The scanning element that exposure light bundle on the exposure object thing and determining film thickness are moved with the irradiation position of light beam; The modulating unit of the intensity of modulation exposure light bundle; With according to measure the determining film thickness unit of etchant resist thickness with the folded light beam of light beam from the determining film thickness of exposure object thing, determining film thickness uses light beam prior to this exposure light bundle, position to the irradiation exposure light bundle on the exposure object thing is shone, modulating unit is modulated the intensity of exposure light bundle according to the measurement result of predefined drawing pattern and determining film thickness unit.
(structure 3)
The present invention is characterized in that according to structure 2 described laser drawing devices, the irradiation position of the exposure light bundle on the exposure object thing and the determining film thickness on the exposure object thing with the irradiation position of light beam be spaced apart 10mm or below the 10mm.
(structure 4)
The laser drawing method that the present invention relates to, it is characterized in that, utilize plotting head to the exposure object thing irradiation exposure light bundle that has formed etchant resist at surface element, the irradiation position of the exposure light bundle on the exposure object thing is moved, according to the thickness of measuring etchant resist from the folded light beam of the exposure light bundle of exposure object thing, the intensity of modulating the exposure light bundle according to the determining film thickness result of predefined drawing pattern and etchant resist.
(structure 5)
The laser drawing method that the present invention relates to, it is characterized in that, utilize plotting head to the exposure object thing irradiation exposure light bundle that has formed etchant resist at surface element, and to exposure object thing irradiation determining film thickness light beam, thickness is estimated with light beam ground is shone in the position of irradiation exposure light bundle prior to this exposure light bundle, move at the irradiation position that makes exposure light bundle on the exposure object thing and determining film thickness with light beam on the exposure object thing, according to measuring the thickness of etchant resist with the folded light beam of light beam from the determining film thickness of exposure object thing, the intensity of modulating the exposure light bundle according to the determining film thickness result of predefined drawing pattern and etchant resist.
(structure 6)
The manufacture method of the photomask that the present invention relates to, it is characterized in that, utilize plotting head to the photomask blank irradiation exposure light bundle that has etchant resist at surface element, the irradiation position of the exposure light bundle on the photomask blank is moved, according to the thickness of measuring etchant resist from the folded light beam of the exposure light bundle of photomask blank, the intensity of modulating the exposure light bundle according to the determining film thickness result of predefined drawing pattern and etchant resist.
(structure 7)
The manufacture method of the photomask that the present invention relates to, it is characterized in that, utilize plotting head to the photomask blank irradiation exposure light bundle that has etchant resist at surface element, and to photomask blank irradiation determining film thickness light beam, thickness is estimated with light beam on the position of irradiation exposure light bundle, shone ground prior to this exposure light Shu Jinhang, move at the irradiation position that makes exposure light bundle on the photomask blank and determining film thickness with light beam on the photomask blank, according to measuring the thickness of etchant resist with the folded light beam of light beam from the determining film thickness of photomask blank, the intensity of modulating the exposure light bundle according to the determining film thickness result of predefined drawing pattern and etchant resist.
In the laser drawing device that the present invention relates to, the modulating unit of the intensity of the exposure light bundle that modulation is shone the exposure object thing that has formed etchant resist at surface element by plotting head, according to predefined drawing pattern with according to the measurement result of measuring the determining film thickness unit of etchant resist thickness from the folded light beam of the exposure light bundle of exposure object thing, the intensity of modulation exposure light bundle, so without sample substrate, measure the thickness of etchant resist in real time according to the exposure light bundle, and utilize exposure light Shu Jinhang to draw.
Therefore, this laser drawing device need not carry out the determining film thickness operation before drawing, can shorten the needed time of drawing performance.In addition, this laser drawing device so do not need to install other LASER Light Source, can make simple for structureization owing to use the exposure light bundle to measure the thickness of etchant resist.
And, in the laser drawing device that the present invention relates to, to the modulating unit of modulating to the intensity of the exposure light bundle of the exposure object thing irradiation that has formed etchant resist at surface element by plotting head, according to based on predefined drawing pattern with according to the measurement result of measuring the determining film thickness unit of etchant resist thickness from the determining film thickness of exposure object thing with the folded light beam of light beam, the intensity of modulation exposure light bundle, so do not use substrate, measure the etchant resist thickness in real time according to the exposure light bundle, and utilize exposure light Shu Jinhang to draw.
Therefore, in this laser drawing device, need before drawing, not carry out the determining film thickness operation, can shorten the needed time of drawing performance.
In addition, in this laser drawing device, by the irradiation position of the exposure light bundle on the exposure object thing and the determining film thickness on the exposure object thing interval with the irradiation position of light beam is made as 10mm or below the 10mm, can carries out the determining film thickness of correct etchant resist to the position that utilizes exposure light Shu Jinhang to draw.
Promptly, even the present invention can provide a kind of surface element formed etchant resist (photosensitive resin film) even the exposure object thing be also not reduce throughput rate and also can set only exposure under the situation of such large-scale thing such as large-scale photomask to the thickness change of the etchant resist in the tiny area, also can not be subjected to the influence of etchant resist Thickness Variation and carry out the laser drawing device of good drawing Patten drawing the drawing pattern that contains fine pattern.
Description of drawings
Fig. 1 is the block scheme of the structure in the 1st embodiment of the laser drawing device that the present invention relates to of expression.
Fig. 2 is the stereographic map of structure of the plotting head in the 1st embodiment of the above-mentioned laser drawing device of expression.
Fig. 3 is the planimetric map that the grating scanning mode as the plotting mode in the above-mentioned laser drawing device is described.
Fig. 4 is the process flow diagram of action in the 1st embodiment of the above-mentioned laser drawing device of expression.
Fig. 5 is the side view of structure of plotting head of the 2nd embodiment of the laser drawing device that the present invention relates to of expression.
Fig. 6 is the block scheme of structure in the 2nd embodiment of the above-mentioned laser drawing device of expression.
Fig. 7 is the process flow diagram of action in the 2nd embodiment of the above-mentioned laser drawing device of expression.
Symbol description
1: plotting head; 2; Exit lens; 3: light source; 4: modulator element; 5: deflecting element; 6: moving stage; 24: the determining film thickness circuit; 25: optical head; 101: substrate; 102: etchant resist.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.
(the 1st embodiment of laser drawing device)
The laser drawing device that the present invention relates to is a device of drawing desired pattern when making photomask etc. on etchant resist.
This laser drawing device as shown in Figure 1, constitutes and possesses: plotting head 1; Make light beam inject the light source 3 of the exit lens 2 of this plotting head 1; As the modulator element 4 of modulation from the modulating unit of the intensity of the exposure light bundle R of these light source 3 ejaculations; Deflecting element 5 as the scanning element of the optical path-deflecting that makes this exposure light bundle R; With the moving stage 6 as the scanning element of movable operation ground supporting substrate 101, this substrate 101 is by the exposure object thing of the light beam irradiates that penetrates from exit lens 2.
The plotting head 1 of this laser drawing device as shown in Figure 2, possesses: the exit lens 2 that penetrates exposure light bundle R downwards; With the matrix material portion 7 that supports this exit lens.In the laser drawing device,, can rise and support this plotting head 1 with descending via slide block 8.This plotting head 1 descends to the surface as the substrate 101 of exposure object thing when the laser drawing device action, near this surface, utilizes scanning element, moves when horizontal direction relatively moves at substrate 101 relatively.That is, the surface of 1 pair of substrate 101 of this plotting head is via extremely narrow fixing space, when correspondingly thereto moving horizontally, from the top on the surface of this substrate 101, irradiation exposure light bundle R.
In addition, plotting head 1 and substrate 101 relatively move by utilizing moving stage 6 to carry out to horizontal direction move operation substrate 101 to horizontal direction, still also can plotting head 1 be moved and carry out.
In addition, this plotting head as be used to keep and the surface of substrate 101 between constant unit, space, possess when substrate 101 descends, to the mechanism of these substrate 101 jet airstreams.In this plotting head 1, suspend owing to the pressure of the airflow that sprays to substrate 101 with from rebalancing method, thereby keep and substrate 101 between the space constant.That is, this plotting head 1 is when the laser drawing device action, because deadweight descends to substrate 101, and utilizes the pressure of the airflow that is sprayed to substrate 101 by lower face and suspends and move.In this plotting head 1, in order to improve resolution and checking ability, owing to the pressure of the airflow that sprays to substrate 101 produce apart from the suspension of substrate 101 at interval, be set as 10 μ m extremely short interval to several 100 μ m.
As light source 3, can use the He-Ca laser of the light beam that for example sends wavelength 442nm etc.Exposure light bundle R from this light source 3 sends as shown in Figure 1, injects modulator element 4, comes modulate intensity by this modulator element 4.This modulator element 4 is driven by modulating driver, the intensity of modulating the exposure light bundle R that sees through thus.
To the data of modulating driver 10 supplies via data input device 11, data processing equipment 12, storer 13 and data readout setup 14.To data input device 11 inputs and the corresponding data of predetermined pattern that the etchant resist on the substrate 101 102 is drawn.The data of this data input device 11 of input are sent to data processing equipment 12, handle as position data (XY coordinate data) and the intensity data corresponding with the pattern of drawing.Data after handling in data processing equipment 12 are stored in the storer 13, utilize data readout setup 14 it to be read and sends to modulating driver 10 from storer 13.
In addition, data readout setup 14 and modulating driver 10 are moved according to the clock from clock generator 16 outputs by controller 15 controls.
And, carried out the exposure light bundle R of intensity modulated by modulator element 4, incide deflecting element 5, make exit direction deflection by seeing through this deflecting element 5.This deflecting element 5 for example is sound-optical conversion component, and by being driven by sweep circuit 17, the light path that makes the exposure light bundle R that sees through is by fixed cycle deflection.
Sweep circuit 17 is controlled by XY controller 18, and this XY controller 18 is moved according to the clock from clock generator 16 outputs by controller 15 controls.
The exposure light bundle R of exit direction that utilized deflecting element 5 deflections incides exit lens 2, and its optically focused also is radiated on the etchant resist 102 on the substrate 101.Be radiated at the exposure light bundle R on the substrate 101 like this, press fixed cycle deflection, and carry out intensity modulated according to the pattern of on substrate 101, drawing.
And XY controller 18 by servo control mechanism 19,20,21,22, drives moving stage 6, shown in arrow X among Fig. 1 and arrow Y like that, by the cycle relatively moves this substrate 101 and plotting head 1 to horizontal direction move operation substrate 101 in accordance with regulations.
The plotting mode of Shi Yonging is the mode that is commonly referred to as grating scanning mode in the present embodiment.Grating scanning mode as shown in Figure 3, the whole drawing area on the exposure light bundle R scanning substrate 101, when arriving pattern part, the intensity of exposure light bundle R rises to setting (for ON), drops to setting (for OFF) at non-pattern part.
In order to scan whole drawing area, the scanning of exposure light bundle R is pressed fixed interval (the Y scanning direction unit of exposure light bundle R) to the Y scanning direction, to the end of scan in 1 interval of Y direction the time, exposure light bundle R is made the distance (the directions X feeding unit of exposure light bundle R) that becomes the zone that next exposure light bundle R will scan with the scanned regional adjacent areas of this exposure light bundle R to a directions X feeding, and carry out this process repeatedly.When the drawing of these row finishes, exposure light bundle R is fed into next column and carries out same scanning repeatedly, scan whole drawing area.
When exposure light bundle R is fed into next column, following mode is arranged: the mode that small lap is adjacent to feeding (single is by (single pass) plotting mode) is set and between the Y scanning direction unit in order to carry out the volume exposure, to dispose the mode (repeatedly by (multi-pass) plotting mode) of Y scanning direction unit with ormal weight overlappingly.
In addition, the scanning of the exposure light bundle R of Y direction utilizes the deflection of exposure light bundle R to carry out, and moving of the exposure light bundle R of directions X generally undertaken by objective table is moved.
Like this, by the exposure light bundle R that carries out repeatedly having carried out intensity modulated by modulator element 4 on substrate 101 scanning and utilize moving stage 6 to make moving of substrate 101, on substrate 101, draw the predetermined pattern that is input to data input device 11.In addition, the plotting speed that carries out like this is per minute 300mm for example
2To 1500mm
2
And this laser drawing device possesses the determining film thickness unit of measuring the etchant resist thickness according to the folded light beam that from the exposure object thing is the exposure light bundle R of substrate 101.That is,,, arrive light beam beam splitter 23 through exit lens 2 and deflecting element 5 from the folded light beam of the exposure light bundle R of substrate 101.This light beam beam splitter 23 is optical splitters for example.Go to the exposure light bundle R of deflecting element 5 from modulator element 4, see through this light beam beam splitter 23.And the exposure light bundle R from deflecting element 5 returns to modulator element 4 from the light path beam split to modulator element 4, incides the determining film thickness circuit 24 as the determining film thickness unit by this light beam beam splitter 23.This determining film thickness circuit 24 detects the reflection light quantity of incident, calculates the thickness of etchant resist 102 according to this testing result.
From the reflection light quantity of the exposure light bundle R of substrate 101, according to from the reflected light on etchant resist 102 surfaces with change from the catoptrical interference on etchant resist 102 the insides (that is the surface of substrate 101).That is, owing to, be the function of the thickness of etchant resist 102, so, just can learn the thickness of etchant resist 102 from the testing result of reflection light quantity if pre-determine the relation of these reflected light values and thickness from the reflected light value of the exposure light bundle R of substrate 101.
In addition, in order to carry out the determining film thickness of etchant resist with exposure light bundle R, must produce even the reflected light of very small exposure light bundle R from substrate 101.But, on the other hand, when carrying out laser drawing, owing on the draughting accuracy, it is desirable to usually suppress the folded light beam of exposure light bundle R very low.Therefore, in the present embodiment,, also can adjust reflectivity in advance by methods such as control etchant resist thickness from substrate 101 in order to obtain detectable reflected light in the dysgenic scope not bringing to draughting accuracy.
And, be sent in the film thickness value of the etchant resist 102 of calculating in the determining film thickness circuit 24 to modulating driver 10.This modulating driver 10 is proofreaied and correct the modulation voltage in the modulator element 4 according to the film thickness value of etchant resist 102.That is, modulator element 4 is modulated the intensity of exposure light bundle R according to the measurement result of predefined drawing pattern and determining film thickness circuit 24.
In addition, in substrate 101 enterprising professional etiquettes are drawn the interval of drafting of pattern surely, because according to the intensity of drawing pattern modulation exposure light bundle R, so folded light beam also changes pro rata with this intensity modulated.Therefore, in this case, according to the relation of that calculate in advance, corresponding, catoptrical intensity and thickness, the thickness of decision etchant resist with the modulate intensity of the exposure light bundle R of outgoing.
That is, in this laser drawing device, shown in the process flow diagram of Fig. 4, at first, in step st1, on substrate 101, in the determining film thickness interval of regulation, detect the light quantity of the folded light beam of this exposure light bundle R.This determining film thickness interval is the interval about 100 μ m for example.
And in step st2, according to the light quantity of detected folded light beam, the thickness of etchant resist 102 that carries out the drawing point place in determining film thickness interval calculates, and calculates its mean value, and stores this and calculate the result.
In step st3, whether the thickness of differentiating the etchant resist 102 of being calculated by step st2 is included in the specialized range, just enters step st4 in the specialized range if be included in, and does not just enter step st6 within the limits prescribed if comprise.At this, the specialized range of the thickness of etchant resist 102 be for example specified film thickness ± about 2.5% to ± 5% scope.
In step st6, the etchant resist 102 that is judged as substrate 101 is bad, the warning that the line display of going forward side by side is bad.This warning is undertaken by the demonstration that for example gives a warning sound or stipulate.
In step st4, according to the thickness of the etchant resist 102 of in step st2, calculating, the corrected value of the light quantity of decision exposure light bundle R.
In step st5,,,, meanwhile, carry out step st1 Yi Bian carry out the drawing in adjacent determining film thickness interval Yi Bian carry out the correction of exposure (exposure dose) according to the corrected value that in step st4, determines.
Like this, in this laser drawing device, etchant resist in the determining film thickness interval of not drawing 102 is carried out determining film thickness and carries out drawing after the correction exposure amount, the drafting of the drawing pattern of stipulating successively according to the result of this determining film thickness by carrying out repeatedly.
In grating scanning mode, as described above, when repeating exposure light bundle R, preferably be set in Y scanning direction unit in the practical application the scanning of Y scanning direction unit and directions X feeding unit mobile, contain an integer determining film thickness interval.When adopting the single pass-through mode, preferably be set in the interval of the overlapping portion in removing Y scanning direction unit, contain an integer determining film thickness interval.
In the case, in the initial Y scanning direction unit in each row, only measure thickness and do not carry out exposure correction, carry out exposure correction from next interval.In addition, be set in Y scanning direction unit or removing in the interval of this overlapping portion, contain determining film thickness more than 2 or 2 when interval, in the initial interval of each Y scanning direction unit, use the determining film thickness result of previous Y scanning direction unit to carry out exposure correction.
In addition, the length for the directions X in determining film thickness interval preferably makes its directions X feeding unit with the beam diameter that is equivalent to exposure light bundle R identical in the practical application.In addition, be set in Y scanning direction unit or removing in the interval of this overlapping portion, when containing 1 determining film thickness interval, also can be with the directions X feeding unit more than 2 or 2 as the determining film thickness interval.
Said method is the determining film thickness result of reflection between adjacent region, carry out the method for exposure correction, but changes thickness but the tendency that has macroscopic view in face changes because etchant resist is not thickness with microcosmic usually, so can obtain effect of sufficient.
(the 2nd embodiment of laser drawing device)
And the laser drawing device that the present invention relates to as shown in Figure 5, also can constitute and also be provided with optical head 25 from light beam M to the substrate 101 irradiation determining film thickness that become the exposure object thing that use except plotting head 1.
In the case, this laser drawing device as shown in Figure 6, has plotting head 1 and the irradiation determining film thickness optical head 25 with light beam M, become the deflecting element 5 and the moving stage 6 of scanning element, exposure light bundle R on the substrate 101 and determining film thickness are moved with the irradiation position of light beam M.That is, the exposure light bundle R that sends from light source 3 injects modulator element 4, carries out intensity modulated by this modulator element 4.This modulator element 4 is by being driven the intensity of the exposure light bundle R that modulation sees through by modulating driver 10.Supply with the data of having passed through data input device 11, data processing equipment 12, storer 13 and data readout setup 14 to this modulating driver 10.
And, by the exposure light bundle R that modulator element semi-finals degree was modulated, incide the deflecting element (not shown) that the exposure light bundle R of deflecting element 5 uses, make exit direction deflection by seeing through this exposure light bundle R with deflecting element.By being driven by sweep circuit 17, the light path that makes the exposure light bundle R that sees through is by fixed cycle deflection with deflecting element for this exposure light bundle R.
And, from the determining film thickness light beam M that optical head 25 sends, incide the deflecting element (not shown) that the determining film thickness of deflecting element 5 is used with light beam M, make exit direction deflection with light beam M with deflecting element by seeing through this determining film thickness.This determining film thickness is with light beam M deflecting element, with exposure light bundle R with deflecting element side by side, make determining film thickness also make its deflection simultaneously with maintenance constant distance between light beam M and the exposure light bundle R.
By deflecting element 5 deflections the exposure light bundle R and the determining film thickness light beam M of exit direction, inject exit lens 2, optically focused also is radiated on the etchant resist 102 on the substrate 101.Be radiated at the exposure light bundle R on the substrate 101 like this, press fixed cycle deflection, and carry out intensity modulated according to the pattern of on substrate 101, drawing.
And, XY controller 18 drives moving stage 6, shown in arrow X among Fig. 6 and arrow Y by servo control mechanism 19,20,21,22, by the cycle relatively moves substrate 101 and plotting head 1 and optical head 25 to horizontal direction move operation substrate 101 in accordance with regulations.
In this laser drawing device, use the raster scanning plotting mode in the same manner with the 1st embodiment, on substrate 101, for example by per minute 300mm
2To 1500mm
2About speed, be input to the drafting of the predetermined pattern of data input device 11.
And this laser drawing device possesses: the determining film thickness unit of measuring the etchant resist thickness according to the determining film thickness that from the exposure object thing is substrate 101 with the folded light beam of light beam M.That is, from the determining film thickness of substrate 101 with the folded light beam of light beam M through exit lens 2 and deflecting element 5, injecting becomes the determining film thickness of determining film thickness unit circuit 24.This determining film thickness circuit 24 detects the reflection light quantity of incident, according to this testing result, calculates the thickness of etchant resist 102.
From the determining film thickness of substrate 101 reflection light quantity with light beam M, according to from the reflected light on etchant resist 102 surfaces with change from the catoptrical interference on etchant resist 102 the insides (that is the surface of substrate 101).Promptly, owing to use the reflected light value of light beam M from the determining film thickness of substrate 101, be the function of the thickness of etchant resist 102, so, just can know the thickness of etchant resist 102 from the testing result of reflection light quantity if pre-determine the relation of these reflected light values and thickness.
And the film thickness value of the etchant resist 102 that calculates in determining film thickness circuit 24 is sent to modulating driver 10.This modulating driver 10 is proofreaied and correct the modulation voltage in the modulator element 4 according to the film thickness value of etchant resist 102.That is, modulator element 4 is modulated the intensity of exposure light bundle R according to the measurement result of predefined drawing pattern and determining film thickness circuit 24.
In this laser drawing device, determining film thickness light beam M, on substrate 101, R is scanned prior to the exposure light bundle.That is, on substrate 101, shining on the position of determining film thickness with light beam M, thereafter, irradiation exposure light bundle R.Therefore, exposure light bundle R carries out the correction of intensity according to this measurement result and shines shining determining film thickness is measured the thickness of over-protective film etchant resist 102 with light beam M position.
In addition, as this determining film thickness light beam M, make the laser (for example, wavelength 500nm or more than the 500nm) of the photostable wavelength of etchant resist.
And, preferably make the irradiation position of the exposure light bundle R on the substrate 101 and the determining film thickness on the substrate 101 with the irradiation position of light beam M be spaced apart 10mm or below the 10mm.This be because: in during before exposure light bundle R shines on the position of having carried out this mensuration, must store utilize the etchant resist 102 that determining film thickness measures with the irradiation of light beam M thickness (perhaps, to corrected value) based on the exposure light bundle R of this thickness, but, can make before irradiation exposure light bundle R and must data quantity stored tail off by exposure light bundle R and determining film thickness are narrowed down with the interval of the irradiation position of light beam M.
In addition, this laser drawing device also can constitute, as shown in Figure 5, to substrate 101 with 45 ° incident angle irradiation determining film thickness light beam M roughly, this determining film thickness with light beam M, from substrate 101 with the folded light beam that 45 ° emergence angle roughly penetrates, be directly incident on determining film thickness circuit 24.
In addition, utilize the determining film thickness of the etchant resist 102 that determining film thickness circuit 24 carries out, also can only carry out in the determining film thickness interval of not carrying out regulation drawing Patten drawing on substrate 101.In the case, in this laser drawing device, shown in the process flow diagram of Fig. 7, at first, in step st11, in the determining film thickness interval of substrate 101, detect the light quantity of determining film thickness with the folded light beam of light beam M.This determining film thickness interval for example is the interval about 10 μ m.
And in step 12, according to the light quantity of detected folded light beam, the thickness that carries out etchant resist 102 calculates, and calculates its mean value, and stores this result of calculation.
In step st13, for the thickness of the etchant resist 102 that calculates in step st12, whether differentiation comprises within the limits prescribed, just enters step st14 within the limits prescribed if comprise, and does not just enter step st16 if be not included in the scope of regulation.At this, the specialized range of the thickness of etchant resist 102 be for example specified film thickness ± about 2.5% to ± 5% scope.
In step st16, the etchant resist 102 that is judged as substrate 101 is bad, the warning that the line display of going forward side by side is bad.This warning is undertaken by the demonstration that for example gives a warning sound or stipulate.
In step st14, according to the thickness of the etchant resist 102 of in step st12, calculating, the corrected value of the light quantity of decision exposure light bundle R.
In step st15, according to the corrected value that in step st14, determines, draw while carry out the correction of exposure (exposure dose), meanwhile, carry out step stl.
Like this, in this laser drawing device, the etchant resist in the determining film thickness interval of not drawing 102 is carried out determining film thickness and carries out drawing after exposure is proofreaied and correct according to this determining film thickness result by repeating, carry out the drafting of regulation drawing pattern successively.
In addition, in grating scanning mode, as described above, when the scanning of the Y scanning direction unit that repeats exposure light bundle R and directions X feeding unit mobile, preferably be set in Y scanning direction unit in the practical application, contain an integer determining film thickness interval, when adopting the single pass-through mode, preferably be set in the interval of the overlapping portion in removing Y scanning direction unit, contain an integer determining film thickness interval.
In addition, for the length of the directions X in determining film thickness interval, preferably make its directions X feeding unit identical in actual the use with the beam diameter that is equivalent to exposure light bundle R.In addition, be set in Y scanning direction unit or removing in the interval of this overlapping portion, when containing 1 determining film thickness interval, also can be with the directions X feeding unit more than 2 or 2 as the determining film thickness interval.
In the method, deflecting element 5 is set to and makes exposure light bundle R and determining film thickness scan Y scanning direction unit respectively at least with light beam M.
Claims (7)
1. laser drawing device is characterized in that possessing:
Plotting head to the exposure object thing irradiation exposure light bundle that forms etchant resist at surface element;
The scanning element that the irradiation position of the described exposure light bundle on the described exposure object thing is moved;
Modulate the modulating unit of the intensity of described exposure light bundle; With
According to the determining film thickness unit of the thickness in a plurality of determining film thickness interval of measuring described etchant resist from the folded light beam of the described exposure light bundle of described exposure object thing,
Described modulating unit is according to the measurement result of predefined drawing pattern and described determining film thickness unit, the intensity of modulating described exposure light bundle,
On one side utilizing described scanning element and relatively moving, when utilizing the intensity modulated of described exposure light bundle to carry out the correction of exposure, shining the exposure light bundle on one side to the exposure object thing with the exposure object thing.
2. laser drawing device is characterized in that possessing:
Plotting head to the exposure object thing irradiation exposure light bundle that forms etchant resist at surface element;
To the optical head of described exposure object thing irradiation determining film thickness with light beam;
The scanning element that described exposure light bundle on the described exposure object thing and described determining film thickness are moved with the irradiation position of light beam;
Modulate the modulating unit of the intensity of described exposure light bundle; With
According to the determining film thickness unit of the thickness in a plurality of determining film thickness interval of measuring described etchant resist from the described determining film thickness of described exposure object thing with the folded light beam of light beam,
Described determining film thickness, shines the position of the described exposure light bundle of irradiation on the described exposure object thing prior to this exposure light bundle with light beam,
Described modulating unit is according to the measurement result of predefined drawing pattern and described determining film thickness unit, the intensity of modulating described exposure light bundle,
Described plotting head is on one side utilizing described scanning element and is relatively moving with the exposure object thing, when utilizing the intensity modulated of described exposure light bundle to carry out the correction of exposure, shines the exposure light bundle to the exposure object thing on one side.
3. laser drawing device according to claim 2 is characterized in that,
Described determining film thickness on the irradiation position of the described exposure light bundle on the described exposure object thing and the described exposure object thing with the irradiation position of light beam be spaced apart 10mm or below the 10mm.
4. laser drawing method,
This laser drawing method utilizes plotting head to the exposure object thing irradiation exposure light bundle that forms etchant resist at surface element,
The irradiation position of the described exposure light bundle on the described exposure object thing is moved carries out Patten drawing, it is characterized in that,
According to folded light beam from the described exposure light bundle of described exposure object thing, measure the thickness in a plurality of determining film thickness interval of described etchant resist,
According to the determining film thickness result of predefined drawing pattern and described etchant resist, the intensity of modulating described exposure light bundle,
When moving the irradiation position of described exposure light bundle, when the intensity modulated of utilizing described exposure light bundle is carried out the correction of exposure, shine described exposure light bundle to the exposure object thing.
5. laser drawing method,
This laser drawing method utilizes plotting head to the exposure object thing irradiation exposure light bundle that has formed etchant resist at surface element, the irradiation position of the described exposure light bundle on the described exposure object thing is moved carry out Patten drawing, it is characterized in that,
To described exposure object thing irradiation determining film thickness light beam,
On described exposure object thing, make described determining film thickness shine ground, described exposure light bundle on the described exposure object thing and described determining film thickness are moved with the irradiation position of light beam the position of shining described exposure light bundle prior to this exposure light bundle with light beam
According to the folded light beam of using light beam from the described determining film thickness of described exposure object thing, measure the thickness in a plurality of determining film thickness interval of described etchant resist,
According to the determining film thickness result of predefined drawing pattern and described etchant resist, the intensity of modulating described exposure light bundle,
When moving the irradiation position of described exposure light bundle, when the intensity modulated of utilizing described exposure light bundle is carried out the correction of exposure, shine described exposure light bundle to the exposure object thing.
6. the manufacture method of a photomask is characterized in that, the manufacture method of this photomask has following operation:
Utilize plotting head to the photomask blank irradiation exposure light bundle that has etchant resist at surface element,
The irradiation position of the described exposure light bundle on the described photomask blank is moved carries out Patten drawing,
When this Patten drawing, according to folded light beam, measure the thickness in a plurality of determining film thickness interval of described etchant resist from the described exposure light bundle of described photomask blank,
According to the determining film thickness result of predefined drawing pattern and described etchant resist, the intensity of modulating described exposure light bundle,
When moving the irradiation position of described exposure light bundle, when the intensity modulated of utilizing described exposure light bundle is carried out the correction of exposure, described photomask blank is drawn.
7. the manufacture method of a photomask is characterized in that,
Utilize plotting head to the photomask blank irradiation exposure light bundle that has etchant resist at surface element, the irradiation position of the described exposure light bundle on the described photomask blank is moved carry out Patten drawing, and to described photomask blank irradiation determining film thickness light beam,
On described photomask blank, make described determining film thickness shine ground, described exposure light bundle on the described photomask blank and described determining film thickness are moved with the irradiation position of light beam the position of shining described exposure light bundle prior to this exposure light bundle with light beam
According to the folded light beam of using light beam from the described determining film thickness of described photomask blank, measure the thickness in a plurality of determining film thickness interval of described etchant resist,
According to the determining film thickness result of predefined drawing pattern and described etchant resist, the intensity of modulating described exposure light bundle,
When moving the irradiation position of described exposure light bundle, when the intensity modulated of utilizing described exposure light bundle is carried out the correction of exposure, described photomask blank is drawn.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004104082 | 2004-03-31 | ||
| JP2004104082A JP4440688B2 (en) | 2004-03-31 | 2004-03-31 | Laser drawing apparatus, laser drawing method, and photomask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
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| CN1677245A CN1677245A (en) | 2005-10-05 |
| CN100465792C true CN100465792C (en) | 2009-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100637720A Expired - Fee Related CN100465792C (en) | 2004-03-31 | 2005-03-31 | Laser drawing device, method thereof and method for preparing optical mask |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4440688B2 (en) |
| KR (1) | KR100650165B1 (en) |
| CN (1) | CN100465792C (en) |
| TW (1) | TWI279829B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007163632A (en) * | 2005-12-12 | 2007-06-28 | Hitachi Displays Ltd | Method for manufacturing display device, display device and exposure apparatus |
| JP5004283B2 (en) * | 2006-05-15 | 2012-08-22 | Ｈｏｙａ株式会社 | FPD device manufacturing mask blank, FPD device manufacturing mask blank design method, and FPD device manufacturing mask manufacturing method |
| JP4274251B2 (en) * | 2007-01-24 | 2009-06-03 | ソニー株式会社 | Laser drawing method and laser drawing apparatus |
| CN102566288B (en) * | 2010-12-21 | 2013-11-27 | 无锡华润上华半导体有限公司 | Exposure method and system |
| KR101862015B1 (en) | 2011-03-25 | 2018-07-04 | 삼성전자주식회사 | Method of measure an expose energy in photolithography system |
| JP6682263B2 (en) * | 2015-12-25 | 2020-04-15 | キヤノン株式会社 | Detecting apparatus, exposure apparatus, and article manufacturing method |
| WO2022065048A1 (en) * | 2020-09-24 | 2022-03-31 | 株式会社ニコン | Pattern formation method, electronic device production method, and pattern exposure device |
| CN115128912A (en) * | 2022-07-08 | 2022-09-30 | 西湖大学 | Non-mechanical optical scanning optical fiber photoetching machine |
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- 2005-03-31 KR KR1020050027335A patent/KR100650165B1/en not_active IP Right Cessation
- 2005-03-31 CN CNB2005100637720A patent/CN100465792C/en not_active Expired - Fee Related
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| US4308586A (en) * | 1980-05-02 | 1981-12-29 | Nanometrics, Incorporated | Method for the precise determination of photoresist exposure time |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200540936A (en) | 2005-12-16 |
| KR100650165B1 (en) | 2006-11-27 |
| CN1677245A (en) | 2005-10-05 |
| TWI279829B (en) | 2007-04-21 |
| JP4440688B2 (en) | 2010-03-24 |
| KR20060045401A (en) | 2006-05-17 |
| JP2005292271A (en) | 2005-10-20 |
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