CN100468797C - Semiconductor device integrated with radiating fin and manufacturing method thereof - Google Patents
Semiconductor device integrated with radiating fin and manufacturing method thereof Download PDFInfo
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- CN100468797C CN100468797C CNB2005101375053A CN200510137505A CN100468797C CN 100468797 C CN100468797 C CN 100468797C CN B2005101375053 A CNB2005101375053 A CN B2005101375053A CN 200510137505 A CN200510137505 A CN 200510137505A CN 100468797 C CN100468797 C CN 100468797C
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Abstract
The invention discloses a semiconductor device and its manufacturing method, the said semiconductor device including the installed base and light-emitting device. The installed base includes the substrate formed by the first semiconductor material, and the first layer formed by the high heat conductivity material. Furthermore, the first layer is formed above one surface of the substrate. Moreover, the light-emitting device is a multi-layer structure, and the multi-layer structure contains the second layer formed by the second semiconductor material. The light-emitting device is installed at the first layer of the installed base. Moreover, the thermal expansion coefficient difference of the first semiconductor material and the second semiconductor material is in a predetermined range.
Description
Technical field
The present invention relates to a kind of semiconductor device with and manufacture method, especially, the present invention relates to a kind of semiconductor device that contains luminescent device with and manufacture method.
Background technology
The traditional lighting lamp is such as incandescent lamp bulb, though low price, efficient low, power consumption is high, the life-span is short and shortcoming such as easily cracked.Though and fluorescent lamp efficient is higher and than power saving, but still cracked easily, and, cause the problem of environmental pollution easily because fluorescent lamp contains mercury.And flourish in recent years light emitting semiconductor device makes it become a kind of very desirable new-type lighting source owing to have long, light and handy, low power consumption of life-span and do not contain advantages such as harmful substance such as mercury.
Make the method for light emitting semiconductor device in the past, such as No. the 111466th, No. the 68620th, Taiwan patent, No. the 96804th, Taiwan patent and Taiwan patent exposure, with compound semiconductor, for example, GaAs (GaAs), indium phosphide (InP) and aluminium oxide (Al
2O
3), make substrate.In described compound semiconductor substrate, form N type and P type semiconductor afterwards with growth technology.Yet because compound semiconductor substrate meeting absorbs the photon that luminescent device is launched, therefore significantly reducing light goes out defeated efficient.And,, cause light emitting semiconductor device therefore can't reach higher power output with higher current practice because the thermal conductivity of compound semiconductor substrate is not good.This type of light emitting semiconductor device is also easily because the accumulation of heat energy causes the slump of disastrous proportions in useful life.
At above-mentioned shortcoming, many prior aries, such as the Taiwan patent announcement number No. 573373, the Taiwan patent announcement is numbered No. 565957 and the Taiwan patent announcement number No. 550834 exposure, the heat energy that light emitting semiconductor device produced metal material added in the substrate of light emitting semiconductor device, so that can be derived fast.Therefore, described metallic substrates can effectively promote the operating current and the power output of light emitting semiconductor device.
Yet, general normal application is as the metal material of substrate composition, as gallium (Ga), copper (Cu) and aluminium (Al) etc., though have good radiating efficiency, its thermal coefficient of expansion (Thermal expansioncoefficient) is very big with the thermal expansion coefficient difference of epitaxial material.Make in light emitting semiconductor device technology, produce the huge stress (Stress) between substrate and the extension through high-temperature process, cause epitaxial structure to be destroyed.
Summary of the invention
Therefore, a category of the present invention provides a kind of semiconductor device and manufacture method thereof that contains luminescent device, and this manufacture method can overcome above-mentioned shortcoming.
A kind of semiconductor device according to of the present invention one preferred specific embodiment comprises mounting base and luminescent device.This mounting base comprises the substrate that is formed by first semi-conducting material, and the ground floor that is formed by the material with high heat conductance, and this ground floor is formed on the surface of this substrate.
A kind of method of making semiconductor device according to of the present invention one preferred specific embodiment comprises the following step: (a) prepare the substrate that is formed by first semi-conducting material; (b) form ground floor, be covered on the surface of described substrate; (c) optionally remove described ground floor, forming a plurality of first projections and a plurality of zone on the surface of described substrate, each zone in wherein said a plurality of zones is present between per two first projections in described a plurality of first projection; (d) fill a sticky material to described a plurality of zones, to form a plurality of second projections, wherein said a plurality of first projections form mounting layer with described a plurality of second projections; (e) luminescent device is incorporated on the described mounting layer, and described luminescent device is sandwich construction, and described sandwich construction comprises the second layer that is formed by second semi-conducting material; And (f) remove described substrate; The difference of the thermal coefficient of expansion of wherein said first semi-conducting material and described second semi-conducting material falls within a predetermined scope.
A kind of method of making semiconductor device according to of the present invention one preferred specific embodiment comprises the following step: (a) prepare the substrate that is formed by first semi-conducting material; (b) form adhesion coating, be covered on the surface of described substrate; (c) optionally remove described adhesion coating forming a plurality of first projections and a plurality of zone on the described surface of described substrate, each zone in wherein said a plurality of zones is present between per two first projections in described a plurality of first projection; (d) fill have high heat conductance material to described a plurality of zones, to form a plurality of second projections on the described surface of described substrate, wherein said a plurality of second projections form mounting layer with described a plurality of first projections; (e) luminescent device is incorporated on the described mounting layer, described luminescent device is a sandwich construction, and described sandwich construction comprises the layer that is formed by second semi-conducting material; And (f) remove described substrate; The difference of the thermal coefficient of expansion of wherein said first semi-conducting material and described second semi-conducting material falls within a predetermined scope.
In addition, this luminescent device is a sandwich construction, and this sandwich construction comprises the second layer that is formed by second semi-conducting material.This luminescent device is installed on the ground floor of this mounting base with the second layer, and the difference of the thermal coefficient of expansion of this first semi-conducting material and this second semi-conducting material falls within predetermined scope.
Can be further understood detailed description of the present invention and accompanying drawing by following execution mode about the advantages and spirit of the present invention.
Description of drawings
Fig. 1 illustrates the profile according to the semiconductor device of a specific embodiment of the present invention.
Fig. 2 A to Fig. 2 C is the flow chart according to the method for the manufacturing semiconductor device of a specific embodiment of the present invention.
Fig. 3 illustrates the profile according to the semiconductor device of a specific embodiment of the present invention.
Fig. 4 A to Fig. 4 F is the flow chart according to the method for the manufacturing semiconductor device of a specific embodiment of the present invention.
Fig. 5 A to Fig. 5 F is the flow chart according to the method for the manufacturing semiconductor device of a specific embodiment of the present invention.
Fig. 6 A to Fig. 6 D is the flow chart according to the method for the manufacturing semiconductor device of of the present invention one preferred specific embodiment.
Description of reference numerals
1,3: semiconductor device 11: mounting base
111,32: substrate 113,34: ground floor
13,33: luminescent device 131,333: the second layer
31,36: mounting layer 311: first
313: second portion 331: the one deck in the sandwich construction
342,352,372: the first projections 344,354,374: zone
346,356,376: the second projections 35,37: adhesion coating
332: a surface of luminescent device
Embodiment
The invention provides a kind of semiconductor device (Semiconductor device).Disclose as follows according to an advantageous embodiment of the invention.
See also Fig. 1.Fig. 1 illustrates the profile according to the semiconductor device 1 of a specific embodiment of the present invention.Semiconductor device 1 comprises mounting base (Mounting base) 11 and luminescent device (Light-emitting device) 13.Further, this mounting base comprises substrate (Substrate) 111 and ground floor 113.
In addition, luminescent device 13 is a sandwich construction (Multi-layer structure), and this sandwich construction comprises the second layer 131 that is formed by second semi-conducting material.The difference that note that the thermal coefficient of expansion (Thermal expansion coefficient) of this first semi-conducting material and this second semi-conducting material falls within a predetermined scope.In addition, this luminescent device is incorporated into this ground floor of this mounting base.Further, in this specific embodiment, this luminescent device is incorporated on the ground floor of this mounting base with this second layer.
In another specific embodiment, the sandwich construction of this luminescent device further comprises reflector (Reflecting layer), and this luminescent device is incorporated on the ground floor of this mounting base with this reflector.Actually, this reflector can form by evaporation (Evaporation), plating (Plating) or sputter amorphous sheets such as (Sputtering) mode in conjunction with (Wafer bonding).
See also Fig. 2 A to Fig. 2 C.Fig. 2 A to Fig. 2 C illustrates the method according to the manufacturing semiconductor device of a specific embodiment of the present invention.At first, shown in Fig. 2 A, preparation mounting base 11.Mounting base 11 comprises the substrate 111 that is formed by first semi-conducting material, and mounting base 11 comprises a lip-deep ground floor 113 that is formed at substrate 11.
Subsequently, shown in Fig. 2 B, preparation luminescent device 13.Luminescent device 13 is sandwich constructions, and this sandwich construction comprises the second layer 131 that is formed by second semi-conducting material.
At last, shown in Fig. 2 C, luminescent device 13 is incorporated on the mounting base 11, causes ground floor 113 between the substrate 111 and the second layer 131.The difference that note that the thermal coefficient of expansion of this first semi-conducting material and this second semi-conducting material falls within a predetermined scope.
In this specific embodiment, luminescent device 13 is incorporated on the ground floor 113 of mounting base 11 with the second layer 131.In another specific embodiment, the sandwich construction of this luminescent device further comprises a reflector, and this luminescent device is incorporated on the ground floor of this mounting base with this reflector.Actually, this reflector can form by the mode of amorphous sheet combinations such as evaporation, plating or sputter.
In actual applications, this first semi-conducting material can be silicon materials or carbofrax material.And ground floor 113 is formed by copper product, aluminum or diamond.In actual applications, the thickness of substrate 111 is less than 250 microns, and the thickness of ground floor 113 is between 10 to 100 microns.
See also Fig. 3, Fig. 3 illustrates the profile according to the semiconductor device 3 of a specific embodiment of the present invention.Semiconductor device 3 comprises mounting layer (Mounting layer) 31 and luminescent device 33.Mounting layer 31 further comprises the first 311 that is formed by sticky material (Adhesive material), and the second portion 313 that is formed by the material with high heat conductance.Note that the first 311 and the area on the surface of second portion 313 compare less than 0.1.In one embodiment, the thickness of mounting layer 31 is between 10 to 100 microns.
In addition, luminescent device 33 is sandwich constructions, and this sandwich construction comprises the layer 331 that is formed by semi-conducting material.Luminescent device 33 is incorporated on the mounting layer 31 with layer 331, and has the thermal coefficient of expansion of the material coefficient of thermal expansion coefficient of high heat conductance greater than semi-conducting material.In actual applications, this material with high heat conductance is copper product, aluminum or diamond.
In another specific embodiment, the sandwich construction of this luminescent device can further comprise a reflector, and this luminescent device is incorporated into this mounting layer with this reflector.Actually, this reflector can form by the mode of amorphous sheet combinations such as evaporation, plating or sputter.
See also Fig. 4 A to Fig. 4 F.Fig. 4 A to Fig. 4 F illustrates the method according to the manufacturing semiconductor device of a specific embodiment of the present invention.At first, shown in Fig. 4 A, preparation is by first semi-conducting material, as the substrate 32 of silicon materials or carbofrax material formation.Subsequently, shown in Fig. 4 B, form a lip-deep ground floor 34 that covers substrate 32.In actual applications, ground floor 34 is formed by copper product, aluminum or diamond.In actual applications, the thickness of substrate 32 is less than 250 microns, and the thickness of ground floor 34 is between 10 to 100 microns.
Then, shown in Fig. 4 C, optionally remove ground floor 34, on the surface of substrate 32, to form a plurality of first projection (Block) 342 and a plurality of regional 344.Note that each zone 344 in a plurality of regional 344 is present between per two first projections 342 in a plurality of first projections 342.
Afterwards, shown in Fig. 4 D, fill sticky material (Adhesive material) in a plurality of regional 344, to form a plurality of second projections 346, wherein a plurality of first projections 342 form mounting layer 36 with a plurality of second projections 346.In actual applications, this sticky material is polyimides (Polyimide) material or benzocyclobutene (B-staged bisbenzocyclobutene, BCB) material.
Then, shown in Fig. 4 E, luminescent device 33 is incorporated on this mounting layer 36.Luminescent device 33 is sandwich constructions, and this sandwich construction comprises the second layer 333 that is formed by second semi-conducting material.In this specific embodiment, luminescent device 33 is incorporated on the mounting layer 36 with the second layer 333.At last, shown in Fig. 4 F, remove substrate 32.The difference that note that the thermal coefficient of expansion of this first semi-conducting material and this second semi-conducting material falls within a predetermined scope.
In one embodiment, the method for this manufacturing semiconductor device further comprises along these a plurality of second projections and does step of cutting.In one embodiment, the sandwich construction of this luminescent device further comprises a reflector, and this luminescent device is incorporated into this mounting layer with this reflector.Actually, this reflector can form by the mode of amorphous sheet combinations such as evaporation, plating or sputter.
See also Fig. 5 A to Fig. 5 F.Fig. 5 A to Fig. 5 F illustrates the method according to the manufacturing semiconductor device of a specific embodiment of the present invention.At first, shown in Fig. 5 A, preparation is by first semi-conducting material, as the substrate 32 of silicon materials or carbofrax material formation.In actual applications, the thickness of substrate 32 is less than 250 microns.
Subsequently, shown in Fig. 5 B, form a lip-deep adhesion coating (Adhesive layer) 35 that covers this substrate 32.In actual applications, adhesion coating 35 is formed by polyimide material or benzocyclobutene material.
Then, shown in Fig. 5 C, optionally remove adhesion coating 35, on this surface of substrate 32, to form a plurality of first projections 352 and a plurality of regional 354.Note that each zone 354 in a plurality of regional 354 is present between per two first projections 352 in a plurality of first projections 352.
Afterwards, shown in Fig. 5 D, filling has the material of high heat conductance in a plurality of regional 354, to form a plurality of second projections 356 on this surface of luminescent device 32.And a plurality of second projections 356 form mounting layer 36 with a plurality of first projections 352.In actual applications, the thickness of second projection is between 10 to 100 microns.In addition, in actual applications, second material is formed by copper product, aluminum or diamond.
Then, shown in Fig. 5 E, luminescent device 33 is incorporated on the mounting layer 36.Luminescent device 33 is sandwich constructions, and this sandwich construction comprises the layer 331 that is formed by second semi-conducting material.In this specific embodiment, luminescent device 33 is incorporated on the mounting layer 36 with layer 331.At last, shown in Fig. 5 F, remove substrate 32.The difference that note that the thermal coefficient of expansion of this first semi-conducting material and this second semi-conducting material falls within a predetermined scope.
In one embodiment, the method for this manufacturing semiconductor device further comprises along these a plurality of second projections and does step of cutting.In one embodiment, the sandwich construction of this luminescent device further comprises a reflector, and this luminescent device is incorporated into this mounting layer with this reflector.Actually, this reflector can form by the mode of amorphous sheet combinations such as evaporation, plating or sputter.
See also Fig. 6 A to Fig. 6 D.Fig. 6 A to Fig. 6 D illustrates the method according to the manufacturing semiconductor device of of the present invention one preferred specific embodiment.At first, as shown in Figure 6A, preparation luminescent device 33, and luminescent device 33 comprises surface 332.
Subsequently, shown in Fig. 6 B, form the adhesion coating 37 on the surface 332 that covers luminescent device 33.In one embodiment, adhesion coating 37 is formed by polyimide material or benzocyclobutene material.
Then, shown in Fig. 6 C, optionally remove adhesion coating 37, on the surface 332 of luminescent device 33, to form a plurality of first projections 372 and a plurality of regional 374.Note that each zone 374 in a plurality of regional 374 is present between per two first projections 372 in a plurality of first projections 372.
At last, shown in Fig. 6 D, filling has the material of high heat conductance in a plurality of regional 374, to form a plurality of second projections 376 on the surface 332 of luminescent device 33.In actual applications, the material with high heat conductance is copper product, aluminum or diamond, and the thickness of a plurality of second projections 376 is between 10 to 100 microns.
In one embodiment, the method for this manufacturing semiconductor device further comprises along these a plurality of first projections and does step of cutting.
Apparently, semiconductor device provided by the present invention is the semiconductor device of integral fin.In addition, the method for this semiconductor device of manufacturing provided by the present invention, is cut semiconductor device and the integrated encapsulation of fin (Package) afterwards at wafer scale (Wafer level) again.First cutting semiconductor device according to the method and the prior art of manufacturing semiconductor device of the present invention, method with the integrated encapsulation of fin compares again, more efficient, and can save manufacturing cost, also make the combination of semiconductor device and fin more firm, be not easy to come off because of the external force influence.
By the detailed description of above preferred specific embodiment, hope can be known description feature of the present invention and spirit more, and is not to come category of the present invention is limited with above-mentioned disclosed preferred specific embodiment.On the contrary, its objective is that hope can contain various changes and have in the category that is arranged in claim of the present invention of identity property.
Claims (14)
1, a kind of method of making semiconductor device, described method comprises the following step:
(a) prepare the substrate that forms by first semi-conducting material;
(b) form ground floor, be covered on the surface of described substrate;
(c) optionally remove described ground floor, forming a plurality of first projections and a plurality of zone on the surface of described substrate, each zone in wherein said a plurality of zones is present between per two first projections in described a plurality of first projection;
(d) fill a sticky material to described a plurality of zones, to form a plurality of second projections, wherein said a plurality of first projections form mounting layer with described a plurality of second projections;
(e) luminescent device is incorporated on the described mounting layer, and described luminescent device is sandwich construction, and described sandwich construction comprises the second layer that is formed by second semi-conducting material; And
(f) remove described substrate;
The difference of the thermal coefficient of expansion of wherein said first semi-conducting material and described second semi-conducting material falls within a predetermined scope.
2, the method for claim 1 further comprises the following step:
(g) do cutting along described a plurality of second projections.
3, method as claimed in claim 2, wherein said ground floor is formed by copper product, aluminum or diamond.
4, method as claimed in claim 3, wherein said first semi-conducting material is silicon materials or carbofrax material.
5, method as claimed in claim 4, wherein said sticky material are polyimide material or benzocyclobutene material.
6, method as claimed in claim 5, the thickness of wherein said ground floor is between 10 to 100 microns, and the thickness of described substrate is less than 250 microns.
7, method as claimed in claim 5, the sandwich construction of wherein said luminescent device further comprises the reflector, and described luminescent device is incorporated into described mounting layer with described reflector.
8, a kind of method of making semiconductor device, described method comprises the following step:
(a) prepare the substrate that forms by first semi-conducting material;
(b) form adhesion coating, be covered on the surface of described substrate;
(c) optionally remove described adhesion coating forming a plurality of first projections and a plurality of zone on the described surface of described substrate, each zone in wherein said a plurality of zones is present between per two first projections in described a plurality of first projection;
(d) fill have high heat conductance material to described a plurality of zones, to form a plurality of second projections on the described surface of described substrate, wherein said a plurality of second projections form mounting layer with described a plurality of first projections;
(e) luminescent device is incorporated on the described mounting layer, described luminescent device is a sandwich construction, and described sandwich construction comprises the layer that is formed by second semi-conducting material; And
(f) remove described substrate;
The difference of the thermal coefficient of expansion of wherein said first semi-conducting material and described second semi-conducting material falls within a predetermined scope.
9, method as claimed in claim 8 further comprises the following step:
(g) do cutting along described a plurality of first projections.
10, method as claimed in claim 9, wherein said material with high heat conductance is copper product, aluminum or diamond.
11, method as claimed in claim 10, wherein said first semi-conducting material is silicon materials or carbofrax material.
12, method as claimed in claim 11, wherein said adhesion coating is formed by polyimide material or benzocyclobutene material.
13, method as claimed in claim 12, the thickness of wherein said second projection is between 10 to 100 microns, and the thickness of described substrate is less than 250 microns.
14, method as claimed in claim 13, the described sandwich construction of wherein said luminescent device further comprises the reflector, and described luminescent device is incorporated into described mounting layer with described reflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101375053A CN100468797C (en) | 2005-12-29 | 2005-12-29 | Semiconductor device integrated with radiating fin and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101375053A CN100468797C (en) | 2005-12-29 | 2005-12-29 | Semiconductor device integrated with radiating fin and manufacturing method thereof |
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|---|---|
| CN1992358A CN1992358A (en) | 2007-07-04 |
| CN100468797C true CN100468797C (en) | 2009-03-11 |
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| CNB2005101375053A Expired - Fee Related CN100468797C (en) | 2005-12-29 | 2005-12-29 | Semiconductor device integrated with radiating fin and manufacturing method thereof |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102947961B (en) | 2010-06-18 | 2016-06-01 | 英派尔科技开发有限公司 | Electrocaloric effect material and thermal diode |
| US9157669B2 (en) | 2011-04-20 | 2015-10-13 | Empire Technology Development Llc | Heterogeneous electrocaloric effect heat transfer device |
| US9310109B2 (en) | 2011-09-21 | 2016-04-12 | Empire Technology Development Llc | Electrocaloric effect heat transfer device dimensional stress control |
| CN103827601B (en) | 2011-09-21 | 2016-08-17 | 英派尔科技开发有限公司 | Heterogeneous electrocaloric effect heat transfer |
| WO2013043167A1 (en) * | 2011-09-21 | 2013-03-28 | Empire Technology Development Llc | Electrocaloric effect heat transfer device dimensional stress control |
| WO2014014448A1 (en) | 2012-07-17 | 2014-01-23 | Empire Technology Development Llc | Multistage thermal flow device and thermal energy transfer |
| WO2014046640A1 (en) | 2012-09-18 | 2014-03-27 | Empire Technology Development Llc | Phase change memory thermal management with the electrocaloric effect materials |
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