CN100472270C - 微机电系统器件及其制造方法 - Google Patents

微机电系统器件及其制造方法 Download PDF

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CN100472270C
CN100472270C CNB02828352XA CN02828352A CN100472270C CN 100472270 C CN100472270 C CN 100472270C CN B02828352X A CNB02828352X A CN B02828352XA CN 02828352 A CN02828352 A CN 02828352A CN 100472270 C CN100472270 C CN 100472270C
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CN1633616A (zh
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C·徐
M·W·迈尔斯
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light

Abstract

本发明的一个方面提供了一种用于制造第一元件(108)阵列的方法，每个第一元件符合第一几何形状；制造至少一个第二元件(112)阵列，每个第二元件符合第二几何形状；其中制造阵列包括基于每个第一和第二元件的限定特征选择每个第一和第二几何形状的限定方面；以及规范操作每个第一元件(108)和第二元件(112)所需的操作电压的差别，其中这些差别是所选的限定方面的结果，每个元件的限定特征保持不变。

Description

微机电系统器件及其制造方法
技术领域
本发明涉及微机电系统器件的操作。具体地，其涉及微机电系统器件中阵列元件的操作或驱动。
背景技术
微机电系统(MEMS)器件可包括元件阵列，其中元件可通过操作电压的应用，操作于一个或多个被驱动的和未被驱动的状态之间。根据具体的微机电系统器件，元件可包括干涉调制器(IMODs)，开关，红外(IR)检波器(detector)，等。
在某些微机电系统器件中，有可能需要多个阵列，其中每个阵列只包括特定类型的元件，且其中每种元件类型需要不同的操作电压。一个这样的器件的例子是彩色IMOD基的显示器，它在美国专利6040937中有所说明，其包括三组或阵列的IMODs，这些IMODs被设计用来在颜色红/黑，绿/黑和蓝/黑之间切换。每个IMODs阵列具有不同的操作电压。
由于需要不同的操作电压，因而在这些多阵列中的元件未被驱动的和被驱动的状态之间驱动它们提出了一个挑战。
发明内容
根据本发明的第一方面，提供了一种微机电系统器件，其包括多个元件，每个元件都具有至少两个堆叠关系布置的层，当元件处于未被驱动状态时，其间有一个间隙，多个元件至少为两种不同的类型，每个类型的间隙高度不同；并且驱动这些元件至被驱动状态的驱动机构，其中每个元件的一个层相对另一个层被静电位移，而且其中操作驱动机构的最小电压基本上对每个类型的元件是相同的。
根据本发明第二方面，提供了一种制造微机电系统器件的方法，其包括构造一个阵列元件，每个元件具有第一层，第二层和电极层，第二层在未驱动状态时和第一层以一定的间隙隔开，电极层用于在被激励时相应于驱动状态静电驱动第二层以接触第一层，这些元件至少为两种不同的类型，其间隙的高度不同，其中所述的构造包括改变每种元件类型的配置以补偿电压的差别，该电压为驱动每个元件至被驱动状态的所需的电压。
根据本发明进一步的方面，提供了一种微机电系统器件，其包括多个元件，每个元件具有第一层，第二层和电极层，第二层在未被驱动状态时和第一层以一定的间隙隔开，电极层用于在被激励时相应于被驱动状态静电驱动第二层接触第一层，这些元件至少为两种不同的类型，其间隙的高度不同；且元件驱动机构包括集成驱动电路，该集成驱动电路具有多级输出以激励每个元件的电极层，从而引起该元件从其未被驱动的状态改变到被驱动状态。
根据本发明另一个进一步的方面，提供了一种用于制造微机电系统器件的方法，该方法包括制造一个阵列的第一元件，每个第一元件符合第一几何形状；制造至少一个阵列的第二元件，每个第二元件符合第二几何形状；其中制造该阵列包括基于每个第一和第二元件限定的特征，选择每个第一和第二几何形状的限定的方面；和规范操作电压的差别，该操作电压是操作每种第一和第二元件所必须的，其中这些差别是所选的限定的方面的结果，每个元件限定的特征保持不变。
附图说明
图1表示应用本发明各个方面的普通MEMs器件的简图；
图2表示根据本发明的一个实施例，图1中的MEMs器件中元件的几何形状如何可被改变以规范化元件的操作电压的例子；
图3A表示用于元件被驱动层的不同的几何形状，其中所述驱动层具有突起(tabs)；
图3B表示图3A中的被驱动层的三维视图，该被驱动层由支撑件支撑；
图3C表示图3A中的被驱动层，其中的突起具有不同的配置；
图4表示本发明的一个实施例中，在每个元件中的电极配置如何被改变，以实现电压规范化的例子；
图5表示根据本发明另一个实施例，层的硬度如何被改变以实现电压规范化的例子，所述层是在每个元件中被驱动的；
图6表示根据本发明一个实施例的IMOD基的显示阵列简图，其中层的厚度被改变以便实现电压规范化，所述层在每个IMOD中被驱动；
图7表示包括介电叠层的IMOD端面示意图；以及
图8表示根据本发明一个实施例的驱动器的方框图。
具体实施方式
图1以简化的方式表示出本发明各方面所涉及的微机电系统(MEMs)器件100的一般的结构。参考图1，可以看到MEMs器件100包括两个元件，分别被标为102和104。元件102和元件104每个都有公共的下层或底层(lower or base layer)106。元件102具有上层(upper layer)108，其与底层106被一定数目支柱110形的支撑件隔开。相似地，元件104具有上层112，其与基层106被支柱114形的支撑件隔开。显然，支柱114比支柱110高，而因此层106和层108之间的间隙116的高度比层112和层106之间的间隙118的高度小。由于间隙116和118的高度的差别，所需的从未被驱动状态分别静电地驱动层108和112为被驱动状态(未示出)的操作电压是不同的，未被驱动的状态相应于附图中图1所示的状态，其中层106和112接触基层116。因此，任何驱动机构必须考虑操作电压的差别。
如上所述，图1被表示为应用本发明各个方面的一般MEMs器件简图。在实际的实施例中，MEMs器件100可以包括多个阵列，每个阵列包括元件如元件102或108。因此，每个阵列中的元件将要求不同的操作电压。这样的MEMs器件的例子被美国专利6040937所描述的IMOD显示器提供。在这个例子中，有三个阵列，每个包括IMODs形式的元件，IMODs被设计有特定的光学特征，该光学特征源自每个IMOD中的空气间隙的尺寸。每个阵列只包括具有特定光学特征的IMODs。因此，要求不同的操作电压以驱动每个阵列中的IMODs。
本发明的实施例考虑了驱动MEMs器件的问题，如上所述，其中MEMs器件要求不同的操作电压。在本发明说明的具体实施例中，将参考美国专利6040937所述的MEMs器件。然而，应该注意，本发明可应用到任何MEMs器件，包括元件，其中每个元件要求不同的操作电压以驱动或操作元件，这导致元件几何形状构型或状态被改变。这样的元件可包括IMODs，开关，红外(IR)检波器，等，其中几何形状构型的改变包括驱动元件的一个层和另一个层接触。被驱动的层被称为被驱动层以和未被驱动层区分开来。
根据本发明的实施例，操作每个元件所要求的操作电压被规范化。这是通过改变每个阵列中的元件的几何形状实现的。自然地，传递限定的特征至元件的元件几何形状的方面没有被改变。因此，在美国专利6040937中的IMOD显示器的情形中，每个元件(IMOD)中空气间隙的高度给出了IMOD的限定的光学特征，且因此IMOD的几何形状没有被改变的一个方面是空气间隙的高度。
附图中图2表示一个例子，其中图1中所示的元件102的几何形状通过增加支柱110的数量和通过减少其间的间隔而被改变。因此，层108更大程度地被支柱110支撑，而因此要求更高的操作电压驱动层108与层106接触。通过选择支柱110的数目和其间的间隔，可以理解所需的驱动元件102和108的操作电压将被规范化。
在其它实施例中，被驱动层的几何形状可以被改变以增加或减少提供于其中的支撑程度。这在附图3A和3B中作了说明。参考图3A和3B，显示了层300，其与图1和2中的层108和112类似。由于突起302，层300具有不同于层108和112的几何形状，突起302形成支撑于支柱306的范围。因此，突起的厚度和长度可变化以改变对层300的支撑程度。假定驱动层300至附图的平面上需要一个操作电压，可以理解图3A中的突起302比图3B中的突起302提供了更大程度的支撑。因此，将要求比附图中图3A中较小的操作电压驱动附图中图3C中的层300。本发明的实施例使用说明于附图中图3A和3C中说明的原理规范化驱动MEMs中元件所要求的操作电压，其中操作性的上层(被驱动层)被驱动跨过间隙朝向操作性下层。当间隙大时，突起的几何形状按照图3A和图3B中的所示的原理变化，以减少提供给被驱动层的支撑程度。另一个方面，当间隙小时，支撑件的几何形状被改变以提供对被驱动层更大程度的支撑。以这种方式，无论间隙的尺寸如何，通过它，层必将被驱动，所需的驱动层的电压将被规范化。
虽然没有在附图的图1或2中示出，驱动层108和112的驱动机构包括静电驱动层108和112向下朝向基层106的电极。电极被置于层106上。一个电极的例子一般在附图的图4中用数字400表示。根据本发明的某些实施例，为了规范化驱动或操作MEMs中的元件所需的电压，电极400的配置可以被改变。改变电极的配置可包括改变电极的形状，或提供开口于其中，例如，示于电极400中的狭缝402。因此，如果层被跨过小间隙被驱动，电极可以具有狭缝，如狭缝402，其用于减少由电极产生的有效静电力。这允许操作电压被规范化而无论层必须被驱动跨过的间隙的高度如何。
根据本发明的其它实施例，改变元件的几何形状以规范化操作电压可包括改变被驱动层硬度。一种改变被驱动层的方式包括改变其杨氏模量。因此被要求被驱动跨过小的空气间隙的层由具有比被驱动跨过较大空气间隙的层的杨氏模量较高。
改变被驱动层的另一个方法是形成开口于其上以减小其硬度。如图5所示，其中层500除了突起502，还有开口或狭缝504形成于其上。
本发明的不同方面可组合应用，因此，在图5所示的例子中，可看到虽然层500具有形成于其上的狭缝，层本身将被支撑在突起502上，其具有一定的厚度，该厚度被选择以使其对层500提供一定程度的支撑，以允许所需的操作层500的操作电压规范化。
附图中图6给出IMOD基的显示器，如美国专利6040937所描述的显示器的简化形式600。显示器600包括三个阵列602，604和606。每个阵列都是在衬底608上制造的，且包括2×4栅格的IMODs。每个IMOD包括上层610，其在使用中被驱动朝向公共下层612跨过间隙。层610是自支撑的，这是由于具有两个向下延伸的支臂611。每个IMOD具有电极614，其被置于层612上。可以看到，阵列602中的IMODs具有最高的间隙，阵列604中的IMODs具有中间尺寸的间隙，阵列606中的IMODs具有最小的间隙。这是因为阵列602，604和606中的IMODs被制造成具有限定的特征，当处在未被驱动状态时，它们中每一个分别反射红，绿和蓝光。因此，驱动层610朝向层612所需的操作电压将随着该层必须被驱动的间隙的高度而增加。因此，在阵列602中的IMODs比阵列604或阵列606中的IMQDs将要求更大的操作电压。本发明的一个实施例允许操作电压通过改变层610的厚度而规范化，层610的厚度和其必须被驱动的间隙的尺寸成反比。因此，在图6中，层610的厚度被选择以规范化每个阵列内IMODs所要求的操作电压。
在本发明的另一个实施例中，操作电压可以通过随着间隙的高度增加或减少每个层610的张应力而被规范化，该间隙高度为各层分别必须被驱动增加或减少的间隙高度。这可通过控制膜沉积参数实现，如沉积压力，功率和偏置电场。
附图中图7给出MEMs器件700的实施例，其包括IMOD，该IMOD包括机械层702，其被支撑于支柱704上，支柱形成于衬底706上。置于衬底706上的是电极708，在该电极上形成介电叠层710。机械层702和介电叠层708之间的间隔限定一个空气间隙。在使用中，操作电压被施加到驱动层702上以接触介电叠层710。器件700通常将包括三组IMODs，每个在其空气间隙的高度上都不同，以在未被驱动的状态时，分别反射红，蓝和绿光。为了规范化每组IMODs所需的操作电压，介电叠层710的介电常数被改变，在本发明的一个实施例中，以使空气间隙越高，介电常数就越大。可替换地，介电叠层的厚度可被改变以使介电叠层的厚度随着空气间隙的高度被减小(或被增加)而被增加(或被减少)。
根据本发明的另一个实施例，驱动MEMs器件中不同元件要求不同的操作电压的问题是通过提供驱动机构，如附图中图8所示的驱动机构解决的。参考图8，驱动机构包括驱动器芯片800，其包括集成的驱动电路，该驱动电路具有多级输出802，804和806。输出804到806中的每个输出传递不同的电压，且可用于一个实施例中以驱动具有不同尺寸的空气间隙的IMODs，如IMODs808，810，812，当在未被驱动状态时，其分别反射红，绿和蓝光。该设计和驱动芯片800中元件的集成是公知的，且因此没有被进一步的说明。
虽然本发明参考具体示例性实施例说明，显然，可对这些实施例做不同修改和变化而不偏离权利要求中所提出的本发明的更广阔的精神。因此，说明书和附图被认为是说明性的而不是限制性的。

Claims (72)

1.一种微机电系统器件，其包括：
多个元件，每个元件具有至少两个层，所述层被以堆叠关系布置，当在未被驱动状态时，其间有间隙，所述多个元件至少是两种不同类型的，每种类型的间隙高度不同；以及
被配置以驱动所述多个元件至被驱动状态的驱动机构，其中每个元件中的一个所述层被配置以相对另一个层被静电位移，且其中静电位移所述层所需的操作电压对每种类型的元件是基本相同的。
2.如权利要求1所述的微机电系统器件，其中，所述多个元件以阵列结构布置，且其中所述多个元件基本上是共面的。
3.如权利要求2所述的微机电系统器件，进一步包括：多个所述阵列结构，每个阵列结构只含一种类型的元件。
4.如权利要求1所述的微机电系统器件，其中，所述可静电位移层包括多个间隔开布置的支臂，所述支臂支在基底上。
5.如权利要求1所述的微机电系统器件，其中，每个元件的所述层是连续的，所述可静电位移层由支撑结构支撑，所述支撑结构包括多个支撑件，所述支撑件沿第一轴线间隔开且在所述第一轴线横向的方向上延伸，每个支撑件具有支撑表面以当元件在所述未被驱动状态时，支撑所述可静电位移层于另一个层之上。
6.如权利要求5所述的微机电系统器件，其中，沿所述第一轴线，在所述支撑件之间的间隔依赖于所述层间的所述间隙的高度，所述间隙越高，所述间隔越大。
7.如权利要求5所述的微机电系统器件，其中，每个支撑件的所述支撑表面的面积是所述层间的所述间隙的高度的函数，所述间隙越高，所述面积越小。
8.如权利要求1所述的微机电系统器件，其中，每个元件的所述可静电位移层具有一定的杨氏模量，其为层间隙的高度的函数，所述间隙越高，所述杨氏模量就越低。
9.如权利要求1所述的微机电系统器件，其中，每个元件的所述可静电位移层的厚度是其间隙的高度的函数，所述间隙越高，所述厚度越小。
10.如权利要求1所述的微机电系统器件，其中，至少那些具有最高间隙的元件的所述可静电位移层具有形成于其中的开口，以减小其刚度。
11.如权利要求1所述的微机电系统器件，其中，每个元件的所述可静电位移层处于一定程度的张应力作用下，该张应力随所述可静电位移层间隙的高度减小而增加。
12.如权利要求1所述的微机电系统器件，其中，所述驱动机构包括电极层，以在被激励时静电移位所述可静电位移层，其中所述电极层具有形成于其中的开口，以提高所述操作电压，其中所述电极层驱动至少那些具有最小间隙的元件。
13.如权利要求1所述的微机电系统器件，其中，每个元件的所述可静电位移层形成于介电材料上，该介电材料具有介电常数，该介电常数是该元件的所述间隙的高度的函数，所述间隙越高，所述介电常数就越大。
14.如权利要求1所述的微机电系统器件，其中，每个元件的所述可静电位移层形成于介电材料上，该介电材料具有一定的厚度，该厚度是所述元件的所述间隙的高度的函数，所述间隙越高，所述厚度就越小。
15.如权利要求1所述的微机电系统器件，其中，每个元件限定一个干涉调制器，其被配置以调制光。
16.如权利要求15所述的微机电系统器件，其包括三种不同类型的干涉调制器，每种在其间隙的高度上是不同的，以便在未被驱动状态时，分别反射红、蓝或绿光。
17.一种用于制造微机电系统器件的方法，其包括：
构造多个元件，每个元件具有第一层，第二层，该第二层在未被驱动状态时由间隙与所述第一层间隔开，以及电极层，其被配置以当处于被驱动状态时，用操作电压静电驱动所述元件以便所述第二层接触所述第一层，所述元件为至少两种不同类型，每一种类型的间隙高度不同，其中每种类型的元件具有相同的操作电压。
18.如权利要求17所述的方法，其中，每个元件的所述第一和第二层是由连续层限定的，这些连续层是由支撑结构支撑的，该支撑结构包括多个支撑件，支撑件沿第一轴线间隔开且在所述第一轴线横向的方向上延伸，每个支撑件具有支撑表面，以在所述元件处在所述未被驱动状态时，在所述第二层之上支撑所述第一层，所述方法进一步包括：通过构造一种或多种不同类型的元件具有不同的支撑间隔，配置具有相同的操作电压的一种或多种不同类型的元件。
19.如权利要求17所述的方法，其中，每个元件的所述第一层和第二层由连续层形成，这些连续层由支撑结构支撑，所述支撑结构包括沿第一轴线间隔开并在所述第一轴线横向的方向延伸的多个支撑件，每个支撑件具有支撑表面，以当所述元件处于未被驱动状态时，将第一层支撑在第二层之上；所述方法进一步包括：通过构造一种或多种不同类型的元件具有不同的支撑表面面积，配置具有相同的操作电压的一种或多种不同类型的元件。
20.如权利要求17所述的方法，进一步包括：通过构造一种或多种不同类型的元件具有不同的每个元件类型的所述第二层的杨氏模量，配置具有相同的操作电压的一种或多种不同类型的元件。
21.如权利要求17所述的方法，进一步包括：通过构造一种或多种不同类型的元件具有不同的第二层厚度，配置具有相同的操作电压的一种或多种不同类型的元件。
22.如权利要求17所述的方法，进一步包括：通过构造至少一种类型的元件在所述第二层中具有开口，配置具有相同的操作电压的一种或多种不同类型的元件。
23.如权利要求17所述的方法，进一步包括：通过构造一种或多种不同类型的元件在所述第二层中存在张应力，配置具有相同的操作电压的一种或多种不同类型的元件，其中所述张应力约与元件间隙的所述高度成反比。
24.如权利要求17所述的方法，进一步包括：通过构造至少一种类型的元件在所述电极层中具有开口，配置具有相同的操作电压的一种或多种不同类型的元件。
25.如权利要求17所述的方法，其中，每个元件的所述第二层形成于介电材料上，并且进一步包括：通过构造一种或多种不同类型的元件具有不同的介电材料，配置具有相同的操作电压的一种或多种不同类型的元件。
26.如权利要求25所述的方法，其中，所述介电材料的厚度是不同的。
27.如权利要求17所述的方法，其中，所述元件是干涉调制器，其被配置以调制光。
28.一种微机电系统器件，其包括：
多个元件，每个元件具有第一层，第二层，该第二层在未被驱动状态时由间隙与所述第一层间隔开，以及电极层，其被配置以当用操作电压激励所述电极层时，相应于被驱动状态，静电驱动所述第二层与所述第一层接触，其中所述操作电压至少部分基于所述间隙高度，所述元件为至少两种不同类型，每一种类型元件至少其间隙的所述高度不同；以及
驱动电路，该驱动电路具有多级输出，其被配置以根据所述元件的基本相同的所述操作电压，激励每个元件的所述电极层，以使所述元件从其未被驱动状态改变为被驱动状态。
29.一种用于制造微机电系统器件的方法，所述方法包括：
制造多个第一元件，每个第一元件符合第一几何形状；
制造多个第二元件，每个第二元件符合第二几何形状；其中
制造所述第一元件和第二元件包括：
规范化操作或标准化操作每个所述第一和第二元件所需的操作电压的差别。
30.如权利要求29所述的方法，其中规范化差别包括制造不同于所述第二元件的支撑件的所述第一元件的支撑件。
31.如权利要求29所述的方法，其中，规范化包括改变关于所述第一元件和第二元件的厚度。
32.如权利要求29所述的方法，其中，所述规范化包括产生每个第一和第二元件的上层的刚度的差别。
33.如权利要求32所述的方法，其中，产生所述刚度的差别包括产生每个第一和第二元件的所述上层的杨氏模量的差别。
34.如权利要求32所述的方法，其中，产生所述刚度的差别包括形成开口于所述上层以减小此处的刚度。
35.如权利要求29所述的方法，其中，所述规范化包括产生每个第一或第二元件的电极的配置的差别。
36.如权利要求35所述的方法，其中，产生所述电极的配置的差别包括形成开口于其中。
37.如权利要求29所述的方法，其中，所述元件形成于介电材料上，规范化所述差别包括产生所述介电材料的介电特性的差别。
38.如权利要求29所述的方法，其中，所述第一和第二元件是像素。
39.一种微机电系统器件，其包括：
第一元件，其具有至少两层，所述两层之间具有第一间隙，其中，所述第一元件的所述至少两层的一层被配置成相对于另一层移动，并且通过向所述第一元件施加操作电压而充分接近所述第一间隙；以及
第二元件，其具有至少两层，所述两层之间具有第二间隙，其中所述第二元件的所述至少两层的一层被配置成相对于另一层移动，并且通过向所述第二元件施加所述操作电压而充分接近所述第二间隙，其中所述第一间隙的尺寸不同于所述第二间隙的尺寸。
40.如权利要求39所述的微机电系统器件，进一步包括：一电路，其被配置以向至少所述第一元件和所述第二元件施加所述操作电压。
41.如权利要求40所述的微机电系统器件，其中，所述电路包括在每个所述第一和第二元件中的电极层，并且其中，所述第一和第二元件的中的一个在至少一个所述第一和第二元件的所述电极层中具有至少一个开口。
42.如权利要求39所述的微机电系统器件，进一步包括：以基本共面的阵列形式布置的多个所述第一和第二元件。
43.如权利要求42所述的微机电系统器件，进一步包括：至少两个所述基本共面的阵列，其中，所述至少两个基本共面的阵列的一个只包括第一元件，并且所述至少两个基本共面的阵列的一个只包括第二元件。
44.如权利要求39所述的微机电系统器件，其中，各自的第一和第二元件的所述至少两层是连续的。
45.如权利要求39所述的微机电系统器件，其中，每个可移动层由支撑结构支撑，所述支撑结构包括多个支撑件，所述支撑件沿第一轴线分隔开并沿横向于所述第一轴线的方向延伸，并且每个支撑件具有支撑表面以支撑所述可移动层于各自元件的所述至少两层的另外的层上。
46.如权利要求45所述的微机电系统器件，其中，所述第一和第二元件分别沿所述第一轴线具有不同的支撑件间隔。
47.如权利要求45所述的微机电系统器件，其中，所述第一和第二元件分别在每个支撑件上具有不同的支撑表面面积。
48.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件分别关于所述可移动层具有不同的杨氏模量。
49.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件分别关于所述可移动层具有不同等级的厚度。
50.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件中的一个包含至少一个在所述可移动层上形成的开口。
51.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件分别在所述可移动层中具有不同的张应力。
52.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件分别包含具有不同介电常数的介电材料。
53.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件分别包含厚度不同的介电材料。
54.如权利要求39所述的微机电系统器件，其中，所述第一和第二元件的每个是干涉调制器，其被配置以调制光。
55.如权利要求54所述的微机电系统器件，进一步包括：第三元件，其中所述第一、第二和第三元件每个包括干涉调制器，每个元件的间隙的高度不同，以分别反射红、蓝或绿光。
56.一种微机电系统器件，包括：
第一元件，其包括第一电极和至少两层，两层之间具有第一间隙，其中，所述第一元件的所述至少两层的至少一层被配置以相对于另一层移动，并通过向至少所述第一电极施加第一操作电压而充分接近所述第一间隙；以及
第二元件，所述第二元件包括：第二电极和至少两层，两层之间具有第二间隙，其中所述第一间隙的尺寸不同于所述第二间隙的尺寸，其中所述第二元件的所述至少两层的至少一层被配置以相对于另一层移动并通过向至少所述第二电极施加第二操作电压而充分接近所述第二间隙，其中所述第一和第二操作电压基本相同。
57.如权利要求56所述的微机电系统器件，进一步包括：一电路，被配置用于向至少所述第一电极施加所述第一操作电压，并向至少所述第二电极施加所述第二操作电压。
58.如权利要求56所述的微机电系统器件，其中，所述第一电极位于所述第一元件的所述至少两层的一层之上，并且所述第二电极位于所述第二元件的所述至少两层的一层之上。
59.如权利要求56所述的微机电系统器件，进一步包括：多个第一和第二元件，所述多个第一和第二元件以基本共面阵列的方式布置。
60.如权利要求59所述的微机电系统器件，进一步包括：所述基本共面的阵列中的至少两个阵列，其中所述至少两个基本共面的阵列的一个阵列只包括第一元件，并且所述至少两个基本共面的阵列的一个阵列只包括第二元件。
61.如权利要求56所述的微机电系统器件，其中，各自第一和第二元件的所述至少两层是连续的。
62.如权利要求56所述的微机电系统器件，其中，在每个所述第一和第二元件中，配置用于相对另一层移动的所述层由支撑结构支撑，所述支撑结构包括多个支撑件，所述支撑件沿第一轴线间隔开，并沿横向于所述第一轴线的方向延伸。
63.如权利要求62所述的微机电系统器件，其中，所述支撑件之间的间隔沿所述第一轴线，并且是各自元件的所述至少两层之间的所述间隙的尺寸的函数。
64.如权利要求62所述的微机电系统器件，其中，每个支撑件的支撑表面的面积是各自元件的所述至少两层之间的所述间隙的高度的函数。
65.如权利要求56所述的微机电系统器件，其中，在每个所述第一和第二元件中，配置用于相对另一层移动的所述层具有杨氏模量，其中所述杨氏模量是各自元件的所述间隙的尺寸的函数。
66.如权利要求56所述的微机电系统器件，其中，在每个所述第一和第二元件中，配置用于相对另一层移动的所述层具有厚度，所述厚度是各自元件的所述间隙的尺寸的函数。
67.如权利要求56所述的微机电系统器件，其中，至少具有最大的间隙尺寸的元件具有至少一个开口形成于所述层中，所述层被配置以相对于另一层移动。
68.如权利要求56所述的微机电系统器件，其中，在每个所述第一和第二元件中，配置用于相对另一层移动的所述层经受一张应力，所述张应力是各自元件的所述间隙的尺寸的函数。
69.如权利要求56所述的微机电系统器件，其中，具有最小的间隙尺寸的元件具有至少一个开口形成于其电极层中。
70.如权利要求56所述的微机电系统器件，其中，所述第一和第二元件的每个元件进一步包括介电材料，所述介电材料位于所述至少两层之间，其中所述介电材料由介电常数特征化，所述介电常数是各自元件的所述间隙的尺寸的函数。
71.如权利要求56所述的微机电系统器件，其中，每个元件是一个干涉调制器，其被配置以调制光。
72.如权利要求71所述的微机电系统器件，进一步包括：第三元件，其中，所述第一、第二和第三元件每个包括干涉调制器，每个元件具有不同的间隙的高度，以反射红、蓝和绿光。
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KR20040088549A (ko) 2004-10-16
USRE42119E1 (en) 2011-02-08
US6574033B1 (en) 2003-06-03
EP1488271A1 (en) 2004-12-22
KR100944922B1 (ko) 2010-03-03
JP2005525776A (ja) 2005-08-25
EP1488271A4 (en) 2013-05-29
AU2002308517A1 (en) 2003-09-09
WO2003073151A1 (en) 2003-09-04
CN1633616A (zh) 2005-06-29
JP4223406B2 (ja) 2009-02-12

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