CN100474716C - Surface-emitting semiconductor laser component featuring emission in a vertical direction - Google Patents
Surface-emitting semiconductor laser component featuring emission in a vertical direction Download PDFInfo
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- CN100474716C CN100474716C CNB2005800168459A CN200580016845A CN100474716C CN 100474716 C CN100474716 C CN 100474716C CN B2005800168459 A CNB2005800168459 A CN B2005800168459A CN 200580016845 A CN200580016845 A CN 200580016845A CN 100474716 C CN100474716 C CN 100474716C
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Abstract
Disclosed is a surface-emitting semiconductor laser component, especially an electrically pumped semiconductor laser component, which features emission in a vertical direction and is used for generating laser radiation by means of an external optical resonator (4, 5). Said semiconductor laser component comprises a semiconductor element with a sequence (2) of semiconductor layers which is provided with a lateral main direction of extension and an active zone (3) used for generating radiation. A radiation-permeable contact layer (6) is disposed within the resonator and is connected to the semiconductor element in an electrically conducting manner.
Description
The present invention relates to a kind of semiconductor laser component with surface emitting of Vertical Launch direction, the semiconductor laser component at electric pump Pu particularly, it is set for by optical resonantor and produces laser emission, and comprise the semiconductor body with semiconductor layer sequence, wherein the semiconductor layer sequence has horizontal main direction of extension and is provided with and is used for producing the active area of radiation.
In the traditional semiconductor laser component electric pump Pu, surface emitting, because the semi-conducting material conductivity in a lateral direction of semiconductor body is generally very low, so pumping current often injects this semiconductor body by current extending from the n type conductive side of semiconductor body.To this, for example use by the III-V semi-conducting material, as n-GaAs constitute the layer.Yet that this current extending often has equally is low in a lateral direction, usually and the similar conductivity of conductivity of semiconductor body, the radiation that perhaps is absorbed with in the source region to be produced.Because conductivity is low, thus must often implement such current extending so that injection current effectively with big thickness, but improved absorbed radiation power in current extending thus.In a word, owing to absorb and/or little conductivity in a lateral direction, improved the risk of the efficient reduction that makes semiconductor laser component.
Task of the present invention is, a kind of semiconductor laser component of improved surface emitting is described.
According to the present invention, this task solves by the semiconductor laser component with the described feature of claim 1.Favourable improvement project of the present invention is the theme of dependent claims.
A kind ofly comprise semiconductor body with semiconductor layer sequence according to semiconductor laser component of the present invention, that have the surface emitting of Vertical Launch direction, wherein this semiconductor laser component is set for by the external optical resonator and produces laser emission, the semiconductor layer sequence has horizontal main direction of extension and for producing the active area that radiation is provided with, the contact layer and this contact layer that wherein are provided with radiation transmission in resonator link to each other conductively with semiconductor body.Preferably, by the contact layer of radiation transmission incoming call pumping semiconductor laser component.
Can advantageously reduce to have the absorption loss in the current extending of absorption by such mode, this to parts efficient and/or laser works threshold value produce favorable influence.
In case of necessity, can also be provided with the current extending of absorption except that the contact layer of radiation transmission, this has the current extending of absorption to have the transmittance littler than contact layer.Yet, compare the thickness that can advantageously reduce current extending with traditional semiconductor laser component.
Preferably, contact layer conductivity in a lateral direction is high like this, makes can realize that by contact layer pumping current to the uniform electric current in the semiconductor body injects.Particularly preferably, contact layer has this conductivity or structure in a lateral direction, make that the horizontal pumping current density on the central area of semiconductor body is bigger than the pumping current density on the fringe region at semiconductor body, wherein the electric current to the contact layer injects and preferably carries out on the central area of semiconductor body.
Horizontal pumping current density has the distribution of approximate Gaussian shape basically, and this is distributed in has maximum in the central area, from maximum, has the flank of relatively flat in the central area and edge region has the flank of steepen.
Can be on big relatively transverse area by contact layer, for example on the transverse area of extending transversely with 10-10000 μ m, preferred 100 μ m to 1000 μ m or 100 μ m to 500 μ m, realized in the central area on semiconductor body uniform basically in a lateral direction pumping current density distribution.
In addition, preferably, contact layer is arranged on the semiconductor body.In this way, can realize advantageously electric current being injected in the semiconductor body effectively.Particularly advantageously, the characteristic of contact layer is the favourable contact characteristics to semiconductor body.For example, contact layer forms the contact that is essentially resistance to semiconductor body.
In the preferred expansion scheme of another kind of the present invention, contact layer comprises oxide, particularly metal oxide.The oxide of the conduction of radiation transmission (TCO:Transparent Conducting Oxide (transparent conductive oxide)), the particularly characteristic of metal oxide are the high radiation transmissions on wide wave-length coverage and have simultaneously high conductivity in a lateral direction.Contact layer for example can comprise one or more TCO materials, for example zinc oxide, as ZnO, perhaps indium tin oxide, as ITO, tin-oxide, as SnO
2, perhaps titanium oxide is as TiO
2, perhaps form by them.In order to improve conductivity, contact layer can preferably mix with metal.For example, ZnO can mix with Al.
Preferably, contact layer comprises ZnO or ITO.The characteristic of ZnO is that the semi-conducting material that the p type conducts electricity is had particularly advantageous contact performance.
For example, ZnO for 400nm and approximately the wavelength between the 1100nm have and be approximately 0 absorption coefficient, be 0.1 or littler absorption coefficient and have for the wavelength between about 340nm and the 1200nm.ITO is for example for greater than the wavelength between the 500nm to 1000nm and surpass wavelength on this scope and have and be approximately 0 absorption coefficient, and to have for 400 to 500nm wavelength be 0.1 or littler absorption coefficient.So little absorption coefficient is corresponding with high transmission value.
Preferably, the thickness of contact layer is 100nm or thicker, and is less than or equal to 1000nm.Contact layer for example can be 20 Ω _ sq or littler at the layer resistance of horizontal direction.Ω _ the sq of unit be referred to herein as contact layer quadrature (
SqUare) resistance.
In a kind of preferred expansion scheme of the present invention, form the border of resonator by other external emitters of preferred first reflector in semiconductor body and/or that be configured to Bragg reflector and at least one.
External reflector can be configured at the output coupled reflection device from the radiation of resonator, and preferably has the reflectivity lower than first reflector for this reason.Particularly preferably be, external reflector is by free radiation zone and semiconductor body interval.
The radiation that is produced in the active area can be reflected between first reflector and external reflector in this wise, make in resonator, to be formed in active area, producing the radiation field of coherent radiation (laser emission) that coherent radiation can be coupled from resonator output by output coupled reflection device by induced emission (induzierte Emission).
According to a kind of favourable improvement project of the present invention, contact layer is arranged in the direct light path between the external reflector of active area and resonator.
With (the VCSEL: vertical cavity surface emitting laser (Vertical CavitySurface Emitting Laser)) compare, can realize high-output power of the parts with internal resonance device by the semiconductor laser component (VECSEL: vertical external cavity emitting laser (Vertical External Cavity SurfaceEmitting Laser) or semiconductor disc laser) of surface emitting with external resonator.
The preferred expansion scheme of another kind according to the present invention, active area comprises single quantum or multi-quantum pit structure.Such structure is particularly suitable for semiconductor laser component.In case of necessity, active area also can comprise one or more quantum dot or one or more quantum wire.
In the preferred expansion scheme of another kind of the present invention, optical coating (Verguetung) is arranged between semiconductor body and the contact layer or contact layer and semiconductor body back to side on.
According to a kind of favourable improvement project of the present invention, optical coating section construction at least is for the antireflection plated film of radiation in the resonator or radiation mode or high reflection plated film.Can reduce the laser works threshold value by part induced emission in active area, that improve owing to reflection by height reflection plated film, wherein then less radiant power be exported coupling from resonator.The antireflection plated film can cause threshold value to improve and therefore improve the radiant power of output coupling.
Antireflection plated film or high reflection plated film for example can layeredly be implemented, and can comprise the layer that one or more is made of different materials in case of necessity.
Preferably, these layers, in case of necessity aspect the different refractive index and/or thickness the form of one or more λ/4 layer (for example with) according to desirable high reflection or antireflecting characteristic these layers are set.For example, to comprise be the material of dielectric at least one in other layers basically.Particularly, contact layer may be embodied as optically coated layer.
Particularly preferably be the direct and contact layer adjacency of optical coating.
In the favourable expansion scheme of another kind of the present invention, in resonator, be provided with one and select element (Selektionselement) or contact layer to be embodied as the selection element.Preferably, the wavelength of selecting element to be configured to the radiation in the resonator is selected and/or the polarization selection.With respect to other wavelength or polarization, the selection element by appropriate structuring is the wavelength and/or the polarization determined of the radiation in the resonator preferably.Thus, can wavelength or the polarized state by semiconductor laser component institute radiation emitted be exerted an influence in case of necessity.
Particularly can make the polarization of the radiation in the resonator stable in this wise by such mode, make the polarization of radiation be difficult to by selecting element polarization given in advance, producing deviation as the polarization (for example being polarized or the p polarization) of linearity by s.
According to a kind of favourable improvement project of the present invention, select element to comprise a kind of lattice structure.By the diffraction or the reflection of radiation corresponding generation on lattice structure, can pass through grid parameter, as the setting and the spacing of gridline, regulate and select the selection of components characteristic.
The preferred expansion scheme of another kind according to the present invention, semiconductor body is arranged on the supporter, and this supporter preferably makes the semiconductor body mechanically stable.
Preferably, supporter is from support body layer, on this support body layer, the semiconductor layer system is arranged on wafer compound in, wherein be set for a plurality of semiconductor bodies of structure the semiconductor layer optimum system choosing and comprise the corresponding sequence of semiconductor layer.
For example can by with the photoetching method of etching technics combination from the semiconductor layer system with a plurality of semiconductor body structurings that are arranged on the common support body layer.For example when with this segmentation of structures being semiconductor chip (at least one is arranged on the semiconductor body on the supporter), supporter can be from support body layer.
Especially, support body layer can comprise the growth substrates of semiconductor layer system or be made of the growth substrates of semiconductor layer system, wherein grow on growth substrates to semiconductor layer optimum system choosing extension.
Yet support body layer also can be different from the growth substrates of semiconductor layer system.
For example, such supporter can comprise the semi-conducting material different with growth substrates or metal and/or this supporter is configured to heat abstractor.
If supporter is different with the growth substrates of semiconductor layer system, then during fabrication for example can be arranged on semiconductor layer system on the growth substrates or a plurality of semiconductor body with the opposed side of growth substrates on be fixed on the support body layer different with growth substrates.That can be suitable for this for example can be chip connection method (Waferbonding-Verfahren), engages or welding as anodic bonding, eutectic.Afterwards for example by laser ablation methods (Laserablationsverfahren), mechanical means, as polishing, perhaps chemical method, as etching, growth substrates is removed.When cutting apart, the supporter of semiconductor body can be from the support body layer different with growth substrates.
Yet semiconductor body also can be provided with after cutting apart and/or be fixed on the supporter different with growth substrates, in case of necessity growth substrates or remaining growth substrates is removed from semiconductor body afterwards.
The removal of growth substrates has advantageously improved the degree of freedom aspect the selection of supporter.Supporter needn't meet the high request to growth substrates, but in favourable characteristic, aspect high-termal conductivity and/or high conductivity, can relatively freely select.
In the preferred expansion scheme of another kind of the present invention, prefabricated semiconductor body and after making semiconductor body, contact layer being applied on the semiconductor body.Therefore, can be by diverse ways and/or in turn make semiconductor body and contact layer.For example can make semiconductor body, and the contact layer that preferably contains TCO for example is applied on the semiconductor body by sputter finishing extension after the stage by extension.
Mandatory declaration, semiconductor body prefabricated also can be regarded as prefabricated semiconductor layer system, and this semiconductor layer system is set for a plurality of semiconductor bodies of structure.
In the preferred expansion scheme of another kind of the present invention, nonlinear optical element, the optical element that is preferred for frequency translation are arranged in the resonator.For example, nonlinear optical element is configured to frequency multiplier (SHG: second harmonic produce (
SEcond
HArmonic
GEneration)).Preferably, nonlinear optical element is configured to the radiation in the invisible spectral range, transforms to radiation in the visible spectral range as infrared frequency.
Other characteristics of the present invention, advantage and meet purpose from drawing the explanation to these embodiment in conjunction with the accompanying drawings.
Wherein:
Fig. 1 shows first embodiment according to semiconductor laser component of the present invention by schematic cross sectional view,
Fig. 2 has illustrated the schematic plan according to the semiconductor body of semiconductor laser component of the present invention in Fig. 2 A, and shows the cross direction profiles with the corresponding pumping current density of Fig. 2 A in the curve chart of Fig. 2 B qualitatively,
Fig. 3 shows the schematic plan according to the semiconductor body of semiconductor laser component of the present invention,
Fig. 4 shows second embodiment according to semiconductor laser component of the present invention by diagrammatic cross-sectional view.
Identical, class Sihe effect components identical is provided with identical reference number in these accompanying drawings.
Fig. 1 shows according to of semiconductor laser component of the present invention by diagrammatic cross-sectional view
One embodiment.
Be provided with Bragg reflector 4 between active area 3 and supporter 1, Bragg reflector has constituted the optical resonator that is used for the radiation that produced at active area 3 with external reflector 5.In this embodiment, Bragg reflector 4 is integrated in the semiconductor body of semiconductor laser component with semiconductor layer sequence 2.
In a kind of preferred expansion scheme of the present invention, semiconductor laser component, particularly semiconductor body or active area comprise at least a III-V semi-conducting material, as being In by material
xGa
yAl
1-x-yP, In
xGa
yAl
1-x-yAs or In
xGa
yAl
1-x-yThe semi-conducting material that N (wherein 0≤x≤1,0≤y≤1 and x+y≤1) constitutes.Semiconductor body also can comprise by III-V semiconductor material In
yGa
1-yAs
xP
1-xThe semi-conducting material that (wherein 0≤x≤1 and 0≤y≤1) constitutes.
The characteristic of these semi-conducting materials is the high internal quantum that can reach simplifiedly, and is suitable for from ultraviolet spectral range (In particularly
xGa
yAl
1-x-yN) through visible spectral range (In particularly
xGa
yAl
1-x-yN, In
xGa
yAl
1-x-yP) to infrared spectrum scope (In particularly
xGa
yAl
1-x-yAs, In
yGa
1-yAs
xP
1-x) radiation.
Preferably, semiconductor body is In based on material
xGa
yAl
1-x-yAs.In this material system, can produce the radiation in radiation, the especially wave-length coverage between 800nm and 1100nm in the infrared spectrum scope especially effectively.For example supporter comprises GaAs and the semiconductor layer sequence is In based on material
xGa
yAl
1-x-yAs, wherein 0≤x≤1,0≤y≤1 and x+y≤1.
In the preferred expansion scheme of another kind of the present invention, in the spectral range of the wavelength of the radiation that is produced in the active area between 200nm and 2000nm.Preferably, contact layer has extra high transmittance to the wavelength of the radiation that produced in the active area.
It is right that Bragg reflector has a plurality of semiconductor layers, and these semiconductor layers are to having advantageously high refringence (Brechungsindexunterschied).For example each GaAs-and AlGaAs-λ/4 layer semiconductor layer of formation is right.It is right to have schematically shown a plurality of layers in Bragg reflector 4 in Fig. 1.Preferably, Bragg reflector comprises 20 to 30 or the right sequence of more a plurality of semiconductor layer, has produced Bragg reflector thus to laser emission 99.9% or higher overall reflective.Advantageously, Bragg reflector is for example made by extension ground with the semiconductor layer sequence.
Semiconductor layer sequence 2 and supporter 1 back to side on, the contact area of semiconductor layer sequence is provided with the contact layer 6 of transmission for the radiation that is produced, this contact layer for example comprises the ZnO that mixes with for example 2% concentration with Al, perhaps is made up of it.Contact layer 6 links to each other conductively with the semiconductor layer sequence.Preferably, contact layer is set directly at semiconductor layer sequence and lists.Preferably, electrically contacting between semiconductor layer sequence and the contact layer has the characteristic that is essentially resistance.Semiconductor laser component by for example contain respectively at least a metal, be arranged on supporter and semiconductor layer sequence 2 back to side on the first terminal 7 and be arranged on the semiconductor layer sequence and the opposed side of supporter on second terminal 8, the incoming call pumping.
For fear of second terminal 8, as the absorption in the terminal of metal, second terminal 8 of stratiform is being reserved recess on the central area of semiconductor layer sequence and is for example being extended on the fringe region of semiconductor layer sequence annularly.Second terminal 8 links to each other conductively with contact layer 6 and can comprise for example Ti, Al, Pt or have at least a alloy of these materials.
Preferably, between second terminal 8 and semiconductor layer sequence 2, be provided with separator 9, this separator has the recess of band extending transversely, this extending transversely preferred at least in the subregion greater than the extending transversely of the recess in second terminal, make in these subregions, to form the overlapping of terminal and contact layer.Therefore, compare very lowly with contact layer, and mainly in the central area, come injection current, so advantageously avoided the electric pump Pu of the fringe region that is arranged on the separator below of active area by contact layer because semiconductor layer sequence is listed in a lateral direction conductivity.
Separator 9 for example can comprise silicon nitride, silica or silicon oxynitride.Preferably, separator is configured to passivation layer (Passivierungsschicht) simultaneously, and this passivation layer has advantageously improved the protection that semiconductor body is exempted from harmful external action.
Because contact layer 6 advantageously high cross conduction ability in a lateral direction, so mainly will inject the semiconductor layer sequence by the electric current that second terminal 8 is imported in the contact layer by the central area of semiconductor body.The first terminal 7, supporter 1 and Bragg reflector 4 large tracts of land by whole surface be injected into equably in the active area charge carrier can be injected into by second terminal 8 and contact layer 6 that charge carrier in the active area 3 is compound to produce radiation.Because the low relatively cross conduction ability of semiconductor layer sequence, the compound or radiation that produces radiation generates the central area that mainly occurs in active area.
In the present invention, the current path of pumping current in semiconductor body can be determined by the contact-making surface of contact layer and semiconductor body and the structure of separator.Be used for additional, relatively costly measure, can advantageously be removed as burying in oblivion (Veroedung) by the electricity targetedly that injects or oxide mixing (oxidblend) realizes in the fringe region in semiconductor body or semiconductor layer sequence in the semiconductor body guide current.
The radiation that produces in active area is launched from semiconductor body on the vertical direction of surperficial 10 sides, by free radiation zone 11 and arrival external reflector 5.
According to a kind of preferred expansion scheme of the present invention, the semiconductor layer sequence preferably its from active area on the side of contact layer, comprise the semiconductor layer of at least one p type conduction.Particularly preferably being in the regional structure of semiconductor layer sequence between contact layer and the active area is n type conduction for p type conduction and/or the regional structure between Bragg reflector and active area.According to a kind of favourable expansion scheme of the present invention, supporter and Bragg reflector are configured to n type conduction.
According to a kind of favourable improvement project, separator can at first be applied on the whole surface of prefabricated semiconductor body.After applying, will remove at the separator on the contact area of semiconductor layer sequence.In the removed zone of separator, the contact layer material is applied on the semiconductor body.Contact layer can equally with separator be splashed to semiconductor body or semiconductor layer sequence lists.
In case of necessity, contact layer can with one or more in layer or one or more layer combination that is applied to dielectric basically on the contact layer, preferred that the semiconductor body side is set up afterwards, be configured to highly-reflective coating or antireflecting coating for radiation in the resonator or radiation mode.
In case of necessity, can be provided with nonlinear optical element be used for resonator, the preferably frequency translation in free radiation zone 11.
Fig. 2 schematically shows the vertical view according to the semiconductor body of semiconductor laser component of the present invention in Fig. 2 A, and the distribution that shows the pumping current density in the contact layer relevant with lateral attitude on the semiconductor body in the diagram in Fig. 2 B qualitatively.
Fig. 2 A shows the schematic plan according to the semiconductor body of semiconductor laser component of the present invention.For example, show the vertical view of contact layer free radiation zone 11, the there from Fig. 1.Fig. 1 for example can illustrate the cross sectional view of the line A-A in Fig. 2 A basically.The expression of second terminal in Fig. 1 is removed.
The separator 9 that is arranged on the semiconductor body has been shown in Fig. 2 A.Separator is reserved recess in contact area 12, this contact area 12 comprises that central area 120 refers to that with being connected (Anschlussfinger) 121, these connections refer to preferably to extend radially outwardly basically from the central area and occupied the relatively little area of contact area 12.
In the recess of separator 9, contact layer 6 is applied on the whole contact area 12.Thus, the structure of recess has been determined the shape of the contact-making surface between contact layer and the semiconductor body.By the terminal of for example ring-type, semiconductor body be connected the contact layer 6 that refers in 121 the zone and link to each other conductively, and on central area 120, vacated, can electric current be injected with the source region by contact layer 6.
Fig. 2 B shows pumping current density j on the semiconductor body of contact layer side and the correlation of lateral attitude r qualitatively.900 sections of curve with Fig. 2 A in fringe region corresponding, semiconductor body is covered by separator 9 in these fringe regions, 1210 sections be connected refer to 121 corresponding and 1200 sections corresponding with central area 120.
In central area 120, pumping current density is high relatively and is uniform basically.In 1200 sections, the maximum of pumping current density positive central area of 120 from the central area only descends slightly towards the direction that connection refers to, and in 900 sections of the fringe region that is provided with separator 9, is relatively little.In refer in connection 1210 sections, pumping current density outwards descends relatively consumingly.
Thus, by the contact layer of radiation transmission, can on transverse center zone 120, realize pumping current density distribution relatively uniformly.The extending transversely of central area for example can be 10-10000 μ m, is preferably 100 μ m or bigger.Preferably, can realize horizontal pumping current density distribution on the semiconductor body of contact layer side corresponding to Gaussian Profile or this distribution of superelevation (Hypergaussverteilung).
The configuration of the qualitative pumping curve that illustrates among Fig. 2 B is because in a lateral direction high conductivity of contact layer material and uncorrelated with the thickness of contact layer on wide thickness range.Therefore, can be in scope of the present invention with relatively little thickness, for example 10 μ m or littler thickness are implemented contact layer.
In Fig. 3, schematically show vertical view according to the another kind of semiconductor body of semiconductor laser component of the present invention.
For example show the vertical view of contact layer free radiation zone 11, the there from Fig. 1.Fig. 1 for example can illustrate basically along the cross sectional view of the line B-B among Fig. 3.The expression of second terminal of Fig. 1 is omitted.
At this, be provided with selection element 13 by gridline 130 formed grid.For example the lattice structure of linear grid for example can be introduced in separator 9 and/or the contact layer 6 by etching.Preferably, lattice structure is arranged in the central area of the contact area 12 in the contact layer 6 on the semiconductor body at least.
By the spacing of lattice structure, particularly gridline, can the wavelength of the radiation that is enhanced in the resonator be exerted an influence, and therefore the wavelength by the emitted laser radiation of parts institute is exerted an influence.Therefore therefore, the diffraction of the laser emission pattern on grid or reflection cause having improved the loss at this pattern, and can not reach or be difficult to reach laser works threshold value at this pattern.Can regulate the diffraction characteristic or the reflection characteristic of grid by the spacing of gridline.
In addition, select element also can be configured to stable polarization, its mode is that by lattice structure, the polarized state of described a kind of laser emission pattern is with respect to the pattern that differently polarizes and by preferred.
Therefore, select element 13 to can be used as polarisation filter and/or wavelength filter.
Contact area 12 and contact layer 6 are constructed basically circularly at this, and contact layer can be by suitably with as the overlapping of second terminal that schematically shows in Fig. 1 being touched.
Fig. 4 shows second embodiment according to semiconductor laser component of the present invention by schematic cross sectional view.
Semiconductor laser component shown in Fig. 4 is corresponding with the semiconductor laser component shown in Fig. 1 basically.Opposite with the embodiment according to semiconductor laser component of the present invention shown in Fig. 1, the semiconductor body that has Bragg reflector 4 and have a semiconductor layer sequence 2 in source region 3 is arranged on the supporter 1 by articulamentum 14 and fixes with preferably being stabilized in Bragg reflector 4 sides.In this embodiment, supporter 1 is preferred different with the growth substrates of semiconductor body, and comprises for example heat abstractor, and it comprises as CuW, CuDia, Cu, SiC or BN.
Heat abstractor advantageously makes the thermal conductance of active area go out to become easily, makes particularly often also under the high power situation with high loss heat, reduces the risk of the component efficiencies reduction that heat causes.
In order to make such parts, for example at first prefabricated semiconductor body is wherein made Bragg reflector on growth substrates after the semiconductor layer sequence.In the Bragg reflector side, by the eutectic joint semiconductor body is fixed on the supporter then, growth substrates for example removes by wet-chemical chamber or laser ablation methods subsequently.Articulamentum 14 for example can be to engage the layer that is configured by eutectic.Therefore, can make semiconductor body with the order opposite with the semiconductor body shown in Fig. 1 according to Fig. 4.
Present patent application requires the German patent application DE 10 2,004 026163.6 on May 28th, 2004 and the priority of DE 10 2,004 040077.6, includes present patent application by reference and clearly in the whole disclosure of preceding application.
The present invention is not limited by the explanation by these embodiment.Or rather, the present invention includes the combination in any of new feature arbitrarily and these features, it particularly comprises the combination in any of feature in the claims, even these features or these combinations itself do not describe in detail in the claims or among the embodiment.
Claims (22)
1, a kind of semiconductor laser component of surface emitting, has vertical transmit direction, described semiconductor laser component is set for by external optical resonator (4,5) produce laser emission, described semiconductor laser component comprises the semiconductor body with semiconductor layer sequence (2), described semiconductor layer sequence has horizontal main direction of extension and for producing the active area (3) that radiation is provided with, wherein the contact layer of radiation transmission (6) is arranged in the described resonator, described contact layer links to each other conductively with described semiconductor body, and is embodied as selection element (13).
2, semiconductor laser component according to claim 1 is characterized in that, described contact layer (6) comprises oxide.
3, semiconductor laser component according to claim 1 is characterized in that, described contact layer (6) comprises the TCO material.
4, semiconductor laser component according to claim 1 is characterized in that, described contact layer (6) comprises ZnO or ITO.
According to the semiconductor laser component of claim 1, it is characterized in that 5, described contact layer (6) is arranged on the described semiconductor body.
According to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that 6, described contact layer (6) is arranged in the direct light path between the external reflector (5) of described active area (3) and described resonator (4,5).
7, according to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that, form described resonator border by Bragg reflector (4).
According to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that 8, described semiconductor body has the layer that at least one p type conducts electricity at it on the side of described contact layer (6).
9, according to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that the wavelength of the radiation that is produced is arranged in sightless spectral range in described active area.
According to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that 10, described semiconductor laser component is the semiconductor laser component by the pumping of described contact layer (6) incoming call.
11, according to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that prefabricated described semiconductor body and afterwards described contact layer (6) being applied on the described semiconductor body.
According to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that 12, described semiconductor body is arranged on the supporter (1).
13, semiconductor laser component according to claim 12 is characterized in that, described supporter (1) is different with the growth substrates of described semiconductor layer sequence.
14, semiconductor laser component according to claim 12 is characterized in that, described supporter (1) is configured to heat abstractor.
15, according to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that, between semiconductor body and the contact layer (6) or described contact layer (6) and described semiconductor body back to side be provided with optical coating.
According to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that 16, described selection element (13) is configured to the wavelength of the radiation in the resonator is selected and/or the polarization selection.
According to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that 17, described selection element (13) has lattice structure (130).
18, semiconductor laser component according to claim 17 is characterized in that, described lattice structure (130) is configured in the described contact layer (6) at least in part.
19, according to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that, in described resonator, be provided with nonlinear optical element.
20, according to each the described semiconductor laser component in the claim 1 to 5, it is characterized in that the wavelength of the radiation that is produced is in the spectral range between the 200nm to 2000nm in described active area.
21. each the described semiconductor laser component according in the claim 1 to 5 is characterized in that the wavelength of the radiation that is produced is in the infrared spectrum zone in active area.
22. semiconductor laser component according to claim 19 is characterized in that, nonlinear optical element is the nonlinear optical element that is used for frequency inverted.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004026163.6 | 2004-05-28 | ||
| DE102004026163 | 2004-05-28 | ||
| DE102004040077.6 | 2004-08-18 |
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| Publication Number | Publication Date |
|---|---|
| CN1957507A CN1957507A (en) | 2007-05-02 |
| CN100474716C true CN100474716C (en) | 2009-04-01 |
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| CNB2005800168459A Expired - Fee Related CN100474716C (en) | 2004-05-28 | 2005-04-29 | Surface-emitting semiconductor laser component featuring emission in a vertical direction |
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| CN108141010A (en) * | 2015-09-28 | 2018-06-08 | 欧司朗光电半导体有限公司 | Semiconductor laser |
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| DE102015116336B4 (en) * | 2015-09-28 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Semiconductor laser |
| DE102017100997A1 (en) * | 2017-01-19 | 2018-07-19 | Osram Opto Semiconductors Gmbh | Semiconductor laser and method for producing such a semiconductor laser |
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2005
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108141010A (en) * | 2015-09-28 | 2018-06-08 | 欧司朗光电半导体有限公司 | Semiconductor laser |
| US10811843B2 (en) | 2015-09-28 | 2020-10-20 | Osram Oled Gmbh | Semiconductor laser |
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