CN100477494C - 大功率多赫蒂放大器 - Google Patents
大功率多赫蒂放大器 Download PDFInfo
- Publication number
- CN100477494C CN100477494C CNB038193744A CN03819374A CN100477494C CN 100477494 C CN100477494 C CN 100477494C CN B038193744 A CNB038193744 A CN B038193744A CN 03819374 A CN03819374 A CN 03819374A CN 100477494 C CN100477494 C CN 100477494C
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- China
- Prior art keywords
- transistor
- output
- input
- circuit
- doherty amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 230000005540 biological transmission Effects 0.000 claims abstract description 46
- 239000003990 capacitor Substances 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000010363 phase shift Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/04—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
- H03F1/06—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
- H03F1/07—Doherty-type amplifiers
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02078421.1 | 2002-08-19 | ||
EP02078421 | 2002-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1675826A CN1675826A (zh) | 2005-09-28 |
CN100477494C true CN100477494C (zh) | 2009-04-08 |
Family
ID=31725472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038193744A Expired - Lifetime CN100477494C (zh) | 2002-08-19 | 2003-07-18 | 大功率多赫蒂放大器 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7078976B2 (zh) |
EP (1) | EP1532731B1 (zh) |
JP (1) | JP2005536922A (zh) |
KR (1) | KR20050046731A (zh) |
CN (1) | CN100477494C (zh) |
AT (1) | ATE525800T1 (zh) |
AU (1) | AU2003247109A1 (zh) |
WO (1) | WO2004017512A1 (zh) |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
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US7710202B2 (en) | 2003-09-17 | 2010-05-04 | Nec Corporation | Amplifier |
KR100830527B1 (ko) * | 2003-09-17 | 2008-05-21 | 닛본 덴끼 가부시끼가이샤 | 증폭기 |
GB2411062B (en) | 2004-02-11 | 2007-11-28 | Nujira Ltd | Resonance suppression for power amplifier output network |
JP4715994B2 (ja) * | 2004-08-26 | 2011-07-06 | 日本電気株式会社 | ドハティ増幅器並列運転回路 |
US7327803B2 (en) | 2004-10-22 | 2008-02-05 | Parkervision, Inc. | Systems and methods for vector power amplification |
US7355470B2 (en) | 2006-04-24 | 2008-04-08 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including embodiments for amplifier class transitioning |
KR100654650B1 (ko) * | 2004-11-25 | 2006-12-08 | 아바고테크놀로지스코리아 주식회사 | 하이브리드 커플러가 없는 직렬구조의 도허티 증폭기 |
US7145393B1 (en) * | 2005-02-01 | 2006-12-05 | Sitel Semiconductor B.V. | Operational amplifier with class-AB+B output stage |
KR100756041B1 (ko) * | 2005-06-27 | 2007-09-07 | 삼성전자주식회사 | 믹서를 이용한 도허티 증폭장치 및 송신기 |
US8013675B2 (en) | 2007-06-19 | 2011-09-06 | Parkervision, Inc. | Combiner-less multiple input single output (MISO) amplification with blended control |
US9106316B2 (en) | 2005-10-24 | 2015-08-11 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification |
US7911272B2 (en) | 2007-06-19 | 2011-03-22 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including blended control embodiments |
CN101421916B (zh) * | 2006-04-14 | 2011-11-09 | Nxp股份有限公司 | Doherty放大器 |
US7937106B2 (en) | 2006-04-24 | 2011-05-03 | ParkerVision, Inc, | Systems and methods of RF power transmission, modulation, and amplification, including architectural embodiments of same |
US8031804B2 (en) | 2006-04-24 | 2011-10-04 | Parkervision, Inc. | Systems and methods of RF tower transmission, modulation, and amplification, including embodiments for compensating for waveform distortion |
EP2013943B1 (en) * | 2006-04-26 | 2020-03-25 | Ampleon Netherlands B.V. | A high power integrated rf amplifier |
KR100749870B1 (ko) * | 2006-06-07 | 2007-08-17 | (주) 와이팜 | 도허티 전력 증폭 장치 |
US8315336B2 (en) | 2007-05-18 | 2012-11-20 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including a switching stage embodiment |
WO2008062371A2 (en) * | 2006-11-23 | 2008-05-29 | Nxp B.V. | Integrated doherty type amplifier arrangement with high power efficiency |
WO2008099488A1 (ja) * | 2007-02-15 | 2008-08-21 | Panasonic Corporation | 電力増幅器 |
US8076994B2 (en) * | 2007-06-22 | 2011-12-13 | Cree, Inc. | RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction |
WO2009005768A1 (en) | 2007-06-28 | 2009-01-08 | Parkervision, Inc. | Systems and methods of rf power transmission, modulation, and amplification |
KR100862056B1 (ko) | 2007-08-06 | 2008-10-14 | (주) 와이팜 | 광대역 전력 증폭 장치 |
US8228123B2 (en) * | 2007-08-29 | 2012-07-24 | Nxp B.V. | Integrated Doherty amplifier |
EP2191567A1 (en) | 2007-09-03 | 2010-06-02 | Nxp B.V. | Multi-way doherty amplifier |
US7764120B2 (en) * | 2008-08-19 | 2010-07-27 | Cree, Inc. | Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels |
ITRM20080480A1 (it) * | 2008-09-04 | 2010-03-05 | Univ Roma | Amplificatore di tipo doherty |
JP2010273117A (ja) * | 2009-05-21 | 2010-12-02 | Nec Corp | 増幅器 |
EP2441169B1 (en) * | 2009-06-11 | 2019-01-23 | Saab AB | Distributed power amplifier with active matching |
US8410853B2 (en) | 2010-06-01 | 2013-04-02 | Nxp B.V. | Inductive circuit arrangement |
EP2393201A1 (en) | 2010-06-02 | 2011-12-07 | Nxp B.V. | Two stage doherty amplifier |
EP2413498A1 (en) * | 2010-07-30 | 2012-02-01 | Nxp B.V. | Doherty amplifier |
KR101128486B1 (ko) * | 2010-11-23 | 2012-03-27 | 포항공과대학교 산학협력단 | 전력 증폭 장치 |
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EP2463905B1 (en) | 2010-12-10 | 2014-10-01 | Nxp B.V. | Packaged RF transistor with special supply voltage leads |
US8749306B2 (en) * | 2011-03-16 | 2014-06-10 | Cree, Inc. | Enhanced Doherty amplifier |
KR20140026458A (ko) | 2011-04-08 | 2014-03-05 | 파커비전, 인크. | Rf 전력 송신, 변조 및 증폭 시스템들 및 방법들 |
WO2012143748A1 (en) | 2011-04-20 | 2012-10-26 | Freescale Semiconductor, Inc. | Amplifiers and related integrated circuits |
CN102158184A (zh) * | 2011-04-29 | 2011-08-17 | 中兴通讯股份有限公司 | 一种功率放大管以及功率放大方法 |
EP2521257B1 (en) | 2011-05-06 | 2014-11-12 | Nxp B.V. | Doherty amplifier circuit |
WO2011127868A2 (zh) * | 2011-05-30 | 2011-10-20 | 华为技术有限公司 | 一种多赫尔提doherty功率放大器以及信号处理方法 |
JP6174574B2 (ja) | 2011-06-02 | 2017-08-02 | パーカーヴィジョン インコーポレイテッド | アンテナ制御 |
US8514007B1 (en) | 2012-01-27 | 2013-08-20 | Freescale Semiconductor, Inc. | Adjustable power splitter and corresponding methods and apparatus |
US9203348B2 (en) | 2012-01-27 | 2015-12-01 | Freescale Semiconductor, Inc. | Adjustable power splitters and corresponding methods and apparatus |
US9077285B2 (en) | 2012-04-06 | 2015-07-07 | Freescale Semiconductor, Inc. | Electronic devices with multiple amplifier stages and methods of their manufacture |
JP5586653B2 (ja) * | 2012-05-02 | 2014-09-10 | 株式会社東芝 | ドハティ回路 |
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- 2003-07-18 AT AT03787936T patent/ATE525800T1/de not_active IP Right Cessation
- 2003-07-18 KR KR1020057002709A patent/KR20050046731A/ko not_active Application Discontinuation
- 2003-07-18 EP EP03787936A patent/EP1532731B1/en not_active Expired - Lifetime
- 2003-07-18 WO PCT/IB2003/003278 patent/WO2004017512A1/en active Application Filing
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Also Published As
Publication number | Publication date |
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EP1532731A2 (en) | 2005-05-25 |
ATE525800T1 (de) | 2011-10-15 |
US7078976B2 (en) | 2006-07-18 |
CN1675826A (zh) | 2005-09-28 |
AU2003247109A1 (en) | 2004-03-03 |
EP1532731B1 (en) | 2011-09-21 |
JP2005536922A (ja) | 2005-12-02 |
US20050231278A1 (en) | 2005-10-20 |
WO2004017512A9 (en) | 2005-02-17 |
KR20050046731A (ko) | 2005-05-18 |
WO2004017512A1 (en) | 2004-02-26 |
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